Journal of Computational Electronics

We present on the use of well-known stochastic methods for computing the steady-state polarizations of quantum cellular automata (QCA) circuits. Typically, a Boltzmann distribution, which requires the exploration of the complete configuration space of ...

In this paper a performance based comparison of top and bottom contact organic thin film transistor (OTFT) device structures, using two dimensional numerical simulations has been carried out. In addition to this, investigations pertaining to the ...

Metamaterials are artificial materials offering unique properties which render them useful for various applications. In the present paper, we examine whether it is possible to design a split ring resonators' (SRRs) based metamaterial substrate for ...

In the present era of miniaturization and low power devices, the approach of cylindrical gate MOS structure is in vogue among the researchers for enhancing the performance of nanoscale MOSFETs due to the inherent advantage of the cylindrical geometry ...

The piezoelectric potential of ZnO can be enhanced using acceptor dopants to neutralize the donor concentrations. In this study, unintentional n-type conductivity is assessed through modeling ZnO nanowires where the activation process of donors $$(N_d^+)$$ ( N d + ) is ...

Quantum electronic transport across a $$\upbeta $$ ß -poly(vinylidene fluoride) ( $$\upbeta $$ ß -PVDF) ferroelectric barrier structured between two ferromagnetic Fe layers is explored using DFT calculations. The multifunctional junction is organized in capacitor like structure, as ...

The electron transport through ultra-scaled amorphous phase change material (PCM) GeTe is investigated by using ab initio molecular dynamics, density functional theory, and non-equilibrium Green's function, and the inelastic electron---phonon scattering ...

This research paper analyzes the static and dynamic behavior of dual-gate organic thin film transistors (DG-OTFTs) based universal logic gates using the Atlas 2-D numerical device simulator. The electrical characteristics and performance parameters of ...

This paper analyzes the delay performance of multi-layered graphene nanoribbon (MLGNR) interconnect under process induced variations. An equivalent multi-conductor transmission line (MTL) model driven by CMOS gate is employed for the analysis. The ...

For high-efficiency silicon wafer solar cells, Auger recombination is becoming one of the most important efficiency limiting factors. For this purpose it is desirable to be able to use different Auger recombination parameterisations in advanced computer ...

This paper presents a mathematical model of array of equilateral triangular superconducting microstrips implanted in multilayered substrates. The full-wave method is used to calculate the radiation characteristics of equilateral triangular microstrip ...

The effects of hydrostatic pressure and temperature on the linear, nonlinear and total absorption coefficients (ACs) of a hydrogenic impurity in the center of spherical quantum dot (QD) and quantum antidot (QAD) have been investigated. The comparative ...

In this work, we have presented a comprehensive analysis of the performance of copper (Cu) and existing carbon nano tube (CNT) bundle structures (i.e. SWCNT, DWCNT and MWCNT) across nanometer technology nodes like 45, 32, 22 and 16 nm at local, ...

This paper gives an in depth overview on a wave-function based simulation framework (called coos) for modeling ballistic nanotube transistors by solving the effective-mass Schrödinger equation. The framework considers non-parabolic electronic band ...

By the inevitable scaling down of the feature size of the MOS transistors which are deeper in nanoranges, the CMOS technology has encountered many critical challenges and problems such as very high leakage currents, reduced gate control, high power ...

Quantum-dot cellular automata (QCA) is a promising, emerging nano-technology based on single electron effects in quantum dots and molecules. This paper presents design, implementation and simulation of a configurable logic block for a field programmable ...

A new two-dimensional (2D) analytical model for a Triple Material Gate (TM) GaN MESFET has been proposed and modeled to suppress the short channel effects and improve the subthreshold behavior. The analytical model is based on a two-dimensional analysis ...

We model the main characteristics of metal-insulator-silicon field-effect transistors (MISFETs) with different gate insulators using the carrier energy distribution function calculated with a Spherical Harmonics Expansion method. In addition to standard ...

Quantum correction is necessary on the classical drift-diffusion (CLDD) model to predict the accurate behavior of high frequency performance of ATT devices at frequencies greater than 200 GHz when the active layer of the device shrinks in the range of ...

We present a nonlinear eigenvalue solver enabling the calculation of bound solutions of the Schrödinger equation in a system with contacts. We discuss how the imposition of contacts leads to a nonlinear eigenvalue problem and discuss the numerics for a ...

In this paper we study pipelined nanomagnet logic by simulating and comparing varying adjacent clock line structures. Unlike previous simulations, a realistic clock line shape is used in simulations to obtain a more accurate idea of whether or not these ...

A large-signal method based on non-sinusoidal voltage excitation model is used to study the DC and RF characteristics of Double Avalanche Region (DAR) Silicon Transit Time diode. A large-signal simulation program based on drift-diffusion model is ...