TWI743503B - Optoelectronic device and method for manufacturing the same - Google Patents

Abstract

An optoelectronic device including a substrate having a first side and a second opposite to the first side and an outer boundary, a light emitting unit formed on the first side, a first electrode electrically connected to the light emitting unit, a second electrode electrically connected to the light emitting unit and a heat transfer member formed between the first electrode and the second electrode and not electrically connected to the light emitting unit.

Description

Photoelectric element and its manufacturing method

The present invention relates to a photoelectric element, in particular to a photoelectric element with a heat dissipation pad.

The light-emitting principle of light-emitting diode (LED) is to use the energy difference between electrons moving between n-type semiconductor and p-type semiconductor to release energy in the form of light. This light-emitting principle is different from that of incandescent lamps. The light-emitting principle of heating, so the light-emitting diode is called a cold light source. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, the current lighting market has high expectations for light-emitting diodes and regards them as a new generation of lighting tools, which have gradually replaced the traditional Light source, and used in various fields, such as traffic signs, backlight modules, street lighting, medical equipment, etc.

Figure 1 is a schematic diagram of the structure of a conventional light emitting device. As shown in Figure 1, the conventional light emitting device 100 includes a transparent substrate 10, a semiconductor stack 12 on the transparent substrate 10, and at least one electrode 14 on the semiconductor On the stack 12, the above-mentioned semiconductor stack 12 includes at least a first conductivity type semiconductor layer 120, an active layer 122, and a second conductivity type semiconductor layer 124 from top to bottom.

In addition, the above-mentioned light-emitting element 100 can be further combined with other elements to form a light-emitting apparatus. Figure 2 is a schematic diagram of the structure of the conventional light-emitting device As shown in FIG. 2, a light-emitting device 200 includes a sub-mount 20 with at least one circuit 202; at least one solder (solder) 22 is located on the sub-carrier 20, by which the solder 22 will The above-mentioned light-emitting element 100 is bonded and fixed on the sub-carrier 20 to electrically connect the substrate 10 of the light-emitting element 100 and the circuit 202 on the sub-carrier 20; and, an electrical connection structure 24 to electrically connect the electrode 14 of the light-emitting element 100 And the circuit 202 on the secondary carrier 20; wherein, the above-mentioned secondary carrier 20 can be a lead frame or a large-size mounting substrate to facilitate circuit planning of the light-emitting device 200 and improve its heat dissipation effect.

A photoelectric element, comprising: a substrate having a first side and a second side opposite to the first side, and a first outer boundary; a light emitting diode unit formed on the first side; and a first electrode electrically connected A light emitting diode unit; a second electrode electrically connected to the light emitting diode unit; and a heat dissipation pad is formed between the first electrode and the second electrode and is electrically isolated from the light emitting diode unit.

100, 200, 300, 300’, 400, 500: light-emitting element

10: Transparent substrate

12: Semiconductor stack

14.E1, E2: Electrode

30: substrate

U: Photoelectric element unit

U1: The first contact photoelectric element unit

U2: The second contact photoelectric element unit

321: first semiconductor layer

322: active layer

323: second semiconductor layer

S: Ditch

361: first insulating layer

362: Conductive wiring structure

363: second insulating layer

341: first electrode

342: second electrode

381: third electrode

382: fourth electrode

383: The first thermal pad

P: carrier board or circuit component

40: Fifth electrode

42: sixth electrode

44: support element

46: Optical layer

461: open

48: The second thermal pad

482: The first part of the second thermal pad

481: The second part of the second thermal pad

600: light-emitting module

501: download body

502: carrier

503: Carrier

504, 506, 508, 510: lens

512, 514: power supply terminal

515: Through hole

519: reflective layer

521: Glue

540: Shell

700: light source generating device

800: light bulb

921: shell

922: lens

924: lighting module

925: Bracket

926: radiator

927: Series Connection

928: Electric Serial Connector

Figure 1 is a structural diagram showing a side view structural diagram of a conventional optoelectronic device; Figure 2 is a schematic diagram showing a structural diagram of a conventional light-emitting device; Figure 3A is a structural diagram showing an embodiment according to the present invention Figure 3B-3C is a structural diagram showing a side view of the optoelectronic element unit according to an embodiment of the present invention; Figures 4A-4E are a structural diagram showing a top view structure of a photoelectric element unit according to other embodiments of the present invention; Figure 5A is a structural diagram showing a top view structure of a photoelectric element unit according to another embodiment of the present invention Figures; Figure 5B is a structural diagram showing a side view of a photoelectric element unit according to an embodiment of the present invention; Figures 5C-5D are a structural diagram showing a top view of a photoelectric element unit according to an embodiment of the present invention Figures 5E-5F are a structural diagram showing a side view of the optoelectronic element unit according to an embodiment of the present invention; Figure 6A is a structural diagram showing a top view of the optoelectronic element unit according to an embodiment of the present invention Figures 6B is a structural diagram showing a side view of a photoelectric element unit according to an embodiment of the present invention; Figure 6C is a structural diagram showing a top view of a photoelectric element unit according to an embodiment of the present invention; Figure 6D is a structural diagram showing a side view structural diagram of a photoelectric element unit according to an embodiment of the present invention; Figure 6E is a structural diagram showing a top structural view of a photoelectric element unit according to an embodiment of the present invention; 6F The figure is a structural diagram showing a side view structural diagram of a photoelectric element unit according to an embodiment of the present invention; Figures 7A-7D are a structural diagram showing a top view structural diagram of a photoelectric element unit according to another embodiment of the present invention; Figures 8A-8C are schematic diagrams of a light-emitting module; Figures 9A-9B are drawings A schematic diagram of a light source generating device is shown; and Fig. 10 is a schematic diagram of a light bulb.

The present invention discloses a light-emitting element and its manufacturing method. In order to make the description of the present invention more detailed and complete, please refer to the following description in conjunction with the illustrations in FIGS. 3A to 10.

3A and 3B show a side view and a top view of the optoelectronic device 300 according to the first embodiment of the present invention. The photoelectric element 300 has a substrate 30. The substrate 30 is not limited to a single material, and may be a composite substrate formed by combining a plurality of different materials. For example, the substrate 30 may include two first substrates and second substrates (not shown) that are joined to each other.

Next, a plurality of extended array photoelectric element units U, a first contact photoelectric element unit U1, and a second contact photoelectric element unit U2 are formed on the substrate 30. The manufacturing method of the array type optoelectronic element unit U, the first contact optoelectronic element unit U1, and the second contact optoelectronic element unit U2 is as follows: First, an epitaxial crystal is formed on a substrate 30 by a conventional epitaxial growth process The stack includes a first semiconductor layer 321, an active layer 322, and a second semiconductor layer 323.

Then, as shown in Figure 3B, a part of the epitaxial stack is selectively removed by the yellow photolithography process technology to form a plurality of separately arranged optoelectronic element units U, a first contact optoelectronic element unit U1, and a first Two contacts the photoelectric element unit U2 and forms at least one trench S. In an embodiment Wherein, the trench S may include etching with yellow light lithography process technology so that the first semiconductor layer 321 of each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 has an exposed area for use as The formation platform of the subsequent conductive wiring structure.

In another embodiment, in order to increase the overall light extraction efficiency of the device, the photoelectric device unit U, the first contact photoelectric device unit U1, and the second contact photoelectric device unit U2 can also be combined through the technology of transferring epitaxial stacking or substrate bonding. The epitaxial stack is disposed on the substrate 30. The epitaxial stack of the optoelectronic element unit U, the first contact optoelectronic element unit U1, and the second contact optoelectronic element unit U2 can be directly bonded to the substrate 30 by heating or pressing, or through a transparent adhesive layer (not shown) The epitaxial stack of the photoelectric element unit U, the first contact photoelectric element unit U1 and the second contact photoelectric element unit U2 are adhesively bonded to the substrate 30. Among them, the transparent adhesive layer can be an organic polymer transparent adhesive material, such as polyimide (polyimide), benzocyclobutane (benzocyclobutane, BCB), perfluorocyclobutane (prefluorocyclobutane, PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), polyester resin (PET), polycarbonate resin (PC) and other materials or combinations thereof; or a transparent conductive metal oxide layer, such as indium tin oxide (ITO ), indium oxide (InO), tin oxide (SnO2), zinc oxide (ZnO), tin fluorine oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc aluminum oxide (AZO), Zinc gallium oxide (GZO) and other materials or combinations thereof; or an inorganic insulating layer, such as aluminum oxide (Al2O3), silicon nitride (SiNx), silicon oxide (SiO2), aluminum nitride (AlN), titanium dioxide (TiO2), Tantalum Pentoxide (Ta2O5) and other materials or combinations thereof. In one embodiment, the above-mentioned substrate 30 may have a wavelength conversion material.

In fact, the method of arranging the epitaxial stack of the optoelectronic element unit U, the first contact optoelectronic element unit U1, and the second contact optoelectronic element unit U2 on the substrate 30 is not limited to this. Those with ordinary knowledge in the art It should be understandable. In addition, in one embodiment, according to the number of transfers of the substrate 30 The second semiconductor layer 323 is adjacent to the substrate 30, and the first semiconductor layer 321 is on the second semiconductor layer 323 with the active layer 322 sandwiched therebetween.

Then, a chemical vapor deposition method (CVD) and physical gas were used between the epitaxial stack of the first contact photoelectric element unit U1 and the second contact photoelectric element unit U2 and the epitaxial stack of the adjacent photoelectric element unit U. Phase deposition (PVD), sputtering (sputtering) and other techniques are deposited to form the first insulating layer 361, which serves as the protection of the epitaxial stack and electrically insulates the adjacent photovoltaic element units U. After that, a plurality of conductive wiring structures 362 completely separated from each other are respectively formed on the surface of the first semiconductor layer 321 and the surface of the second semiconductor layer 323 of the two adjacent optoelectronic element units U by evaporation or sputtering. The plurality of conductive wiring structures 362 that are completely separated from each other are arranged on the first semiconductor layer 321 in a single direction at one end, and electrically connect the conductive wiring structures 362 to each other through the first semiconductor layer 321. These spatially separated conductive wiring structures 362 continue to extend to the second semiconductor layer 323 of another adjacent optoelectronic element unit U, and the other end is electrically connected to the second semiconductor layer 323 of the optoelectronic element unit U, so that the two Two adjacent photoelectric element units U are electrically connected in series.

The method of electrically connecting adjacent optoelectronic element units U is not limited to this. Those with ordinary knowledge in the art should understand that by arranging both ends of the conductive wiring structure in different optoelectronic element units, the same or different On the semiconductor layer of conductive polarity, a parallel or series electrical connection structure can be formed between optoelectronic element units.

As seen from Figs. 3A-3B, the optoelectronic element 300 is arranged in a series-series array in terms of circuit design. A first electrode 341 is formed on the first semiconductor layer 321 of the photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2, and a second electrode 342 is formed on the second semiconductor layer 323. Wherein, the process of forming the first electrode 341 and the second electrode 342 may be performed in the same forming process as the conductive wiring structure 362, or may be completed by multiple processes. To form the first electrode 341 and the second The material of the electrode 342 may be the same as or different from the material forming the conductive wiring structure 362, respectively. In one embodiment, the second electrode 342 may have a multi-layer structure and/or include a metal reflective layer (not shown) with a reflectivity greater than 80%. In an embodiment, the conductive wiring structure 362 may be a metal reflective layer, and the reflectivity is greater than 80%.

After that, as shown in FIG. 3B, a second insulating layer 363 can be formed on the plurality of conductive wiring structures 362, part of the first insulating layer 361, and part of the sidewall of the epitaxial stack. In an embodiment, the first insulating layer 361 and the second insulating layer 363 may be a transparent insulating layer. Moreover, the material of the first insulating layer 361 and the second insulating layer 363 may be oxide, nitride, or polymer, and the oxide may include aluminum oxide (Al2O3), silicon oxide (SiO2), or titanium dioxide (TiO2). , Tantalum Pentoxide (Ta2O5) or Aluminum Oxide (AlOx); Nitride can include Aluminum Nitride (AlN), Silicon Nitride (SiNx); Polymer can include Polyimide or Benzo Cyclobutane (benzoeyclobutane, BCB) and other materials may be a composite combination of the above. In an embodiment, the second insulating layer 363 may be a Bragg reflector (Distributed Bragg Reflector) structure. In one embodiment, the thickness of the second insulating layer 363 is greater than the thickness of the first insulating layer 361.

Finally, a third electrode 381 is formed on the first electrode 341, a fourth electrode 382 is on the second electrode 342; and at least one first heat dissipation pad 383 is formed on the second semiconductor layer 323 of the optoelectronic element unit U Above, the first heat dissipation pad 383 is electrically insulated from the second semiconductor layer 323 of the photoelectric element unit U by the second insulating layer 363. In one embodiment, the projection of the first heat dissipation pad 383 on the surface of the vertical substrate 30 is not formed on the first insulating layer 361. In one embodiment, the first heat dissipation pad 383 is formed on a flat surface. As shown in FIG. 3A, in one embodiment, the second semiconductor layer 323 of each optoelectronic device unit U in the optoelectronic device 300 has a first heat dissipation pad 383, and the first heat dissipation pad 383 is formed by the second The insulating layer 363 is electrically insulated from the second semiconductor layer 323 of the optoelectronic element unit U.

In one embodiment, the third electrode 381, the fourth electrode 382, and the first heat dissipation pad 383 may be formed together in the same manufacturing process or separately formed in different manufacturing processes. In an embodiment, the third electrode 381, the fourth electrode 382, and the first heat dissipation pad 383 may have the same laminated structure. In order to achieve a certain degree of conductivity, the materials of the first electrode 341, the second electrode 342, the conductive wiring structure 362, the third electrode 381, the fourth electrode 382, and the first heat dissipation pad 383 may be metal, such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), etc., or alloys or laminate combinations thereof.

In one embodiment, the second semiconductor layer 323 has an upper surface and a first surface area, and the first heat dissipation pad 383 has a second surface area, and the ratio of the second area to the first area is 80-100% . In one embodiment, the boundary between any two first heat dissipation pads 383 may have a shortest distance D, and/or D is greater than 100 μm .

In one embodiment, as shown in FIG. 3C, a carrier board or a circuit component P can be provided, and a first carrier electrode E1 and a circuit component P are formed on the carrier board or the circuit component P by wire bonding or soldering. The second carrier electrode E2. The first carrier electrode E1 and the second carrier electrode E2 can form a flip-chip structure with the third electrode 381 and the fourth electrode 382 of the optoelectronic device 300.

In one embodiment, the first carrier electrode E1 can be electrically connected to the third electrode 381 of the optoelectronic device 300 and a first heat dissipation pad 383, and the second carrier electrode E2 can be connected to the fourth electrode 382 and The other first heat dissipation pad 383 is electrically connected to form a flip-chip structure. In this embodiment, the first heat dissipating pad 383 is electrically connected to the first carrier electrode E1 and the second carrier electrode E2 to help dissipate heat. In this embodiment, because each photoelectric element unit U in the photoelectric element 300 arranged in the series array has a voltage difference when it is actuated, the electrical insulation between the first heat dissipation pad 383 and the photoelectric element unit U can prevent the actuation At this time, the above-mentioned voltage difference causes breakdown or leakage between the respective photoelectric element units U. In addition, the projection of the first heat dissipation pad 383 on the surface of the vertical substrate 30 is not formed on the first insulating layer 361, which can also be avoided. Avoid disconnection caused by the height difference of the trench S in the manufacturing process, or avoid leakage or short circuit caused by the incomplete insulation of the first insulating layer 361.

Figures 4A-4E are structural diagrams showing top structural diagrams of optoelectronic element units according to other embodiments of the present invention. Figures 4A to 4E show possible variations of the optoelectronic element of the first embodiment of the present invention. The manufacturing method, materials used, and reference numerals are the same as those of the above-mentioned first embodiment, and will not be repeated here.

As shown in FIG. 4A, each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 are arranged in a straight line. In this embodiment, the first electrode 341 or the second electrode 342 of each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 may have an extended electrode 3421 to increase each photoelectric element The current distribution of the unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 should be understood by those with ordinary knowledge in the art. The shape of the extension electrode can be adjusted according to the design requirements of the product. It is not limited to the shape of the current illustration. In addition, the first heat dissipating pad 383 formed on the photoelectric element unit U will also be adjusted according to the shape of the extended electrode so that it does not directly contact the conductive wiring structure 362, the first electrode 341, or the second electrode 342. Electrical insulation.

Figure 4B shows another possible variation of the present invention. In this embodiment, the photoelectric element units U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 are not arranged in a straight line like the previous embodiment. , And are connected in a ring shape, wherein at least one side wall of the first contact optoelectronic element unit U1 is connected to the side wall of the second contact optoelectronic element unit U2. In addition, the first heat dissipating pad 383 formed on the optoelectronic element unit U will also be adjusted according to the shape of the extended electrode so that it does not directly contact the conductive wiring structure 362, the first electrode 341, or the second electrode 342. Electrical insulation.

Figure 4C shows another possible variation of the present invention. In this embodiment, each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 may be in a ring shape. connect. Except for the first contact photoelectric element unit U1, the width of the first electrode 341 of each photoelectric element unit U and the second contact photoelectric element unit U2 is thinner than the conductive wiring structure 362 and further extends into each unit to increase current distribution. In addition, the first heat dissipating pad 383 formed on the photoelectric element unit U will also be adjusted according to the shape of the conductive wiring structure 362, the first electrode 341 or the second electrode 342 so that it does not directly contact the conductive wiring structure 362, the first electrode 342. One electrode 341 or second electrode 342 is electrically insulated from it.

Figure 4D shows another possible variation of the present invention. In this embodiment, each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 may be connected in a ring shape, and each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U1 are connected in a ring shape. The shape of the contact photoelectric element unit U2 can be changed according to design requirements, but not exactly the same. In this embodiment, there are three optoelectronic element units U with different shapes. Those with ordinary knowledge in the art should understand that the number, shape, size or arrangement of the optoelectronic element units U can be driven by the product. Adjust the design based on the number of voltages. In addition, the first heat dissipating pad 383 formed on the photoelectric element unit U will also be adjusted according to the shape of the conductive wiring structure 362, the first electrode 341 or the second electrode 342 so that it does not directly contact the conductive wiring structure 362, the first electrode 342. One electrode 341 or second electrode 342 is electrically insulated from it.

Figure 4E shows another possible variation of the present invention. In this embodiment, each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U2 can be connected in a W shape, that is, adjacent The connecting directions of the optoelectronic element units U of the two rows are different, and form a matrix arrangement with four rows and four columns. Those with ordinary knowledge in the technical field should understand that the number or arrangement of the photoelectric element units U can be adjusted according to the number of driving voltages required by the product. In this embodiment, by the above-mentioned spiral arrangement, the first contact photoelectric element unit U1 and the second contact photoelectric element unit U2 can be formed in the same row, because the first contact photoelectric element unit U1 and the second contact photoelectric element unit U1 The position of U2 needs to match the subsequent connection with the external circuit. Therefore, in another embodiment, the arrangement of the optoelectronic element units U can also be adjusted so that the first contact optoelectronic element unit U1 and the second contact optoelectronic element unit U2 are located at The diagonal ends of the matrix. In addition, the first heat dissipation pad 383 formed on the optoelectronic element unit U will also The shape of the conductive wiring structure 362, the first electrode 341, or the second electrode 342 is adjusted so that it does not directly contact the conductive wiring structure 362, the first electrode 341 or the second electrode 342, and is electrically insulated from the conductive wiring structure 362, the first electrode 341 or the second electrode 342.

Figures 5A to 5E are side views and top views showing the optoelectronic device manufacturing process of the second embodiment of the present invention. The photoelectric element 300' is a modified example of the above-mentioned first embodiment. Figures 5A-5B are made after continuation of the above-mentioned figures 3A-3B, and the manufacturing method, materials and labels are the same as those of the above-mentioned first embodiment, and will not be repeated here. In the top view of this embodiment, in order to clearly show the difference from the above-mentioned first embodiment, some elements are omitted to keep the drawing concise. People with ordinary knowledge in this technical field should be able to compare the foregoing Examples and fully understand the description of this embodiment.

As shown in FIGS. 5A-5B, a supporting element 44 can be formed on the substrate 30 and cover the sidewall of the substrate 30. In one embodiment, the supporting element 44 can be transparent, and the material can be silicone resin, epoxy resin, or other materials. In one embodiment, a light guide element (not shown) can be formed on the support element 44. In one embodiment, the material of the light guide element can be glass.

Then, an optical layer 46 can be formed on the second insulating layer 363 of the above-mentioned optical element and cover each photoelectric element unit U, the first contact photoelectric element unit U1 and the second contact photoelectric element unit U2. The material of the optical layer 46 may include a mixture of a matrix and a high-reflectivity substance, wherein the matrix may be silicone resin, epoxy resin or other materials, and the high-reflectivity substance may be TiO2.

Next, as shown in FIG. 5C, a plurality of openings 461 are formed on the optical layer 46, and the plurality of openings correspond to the third electrode 381 and the third electrode 381 of the first contact photoelectric element unit U1 and the second contact photoelectric element unit U2. The position of the four electrodes 382, and part of the third electrode 381 and the fourth electrode 382 are exposed. In one embodiment, the opening 461 also corresponds to the position of the first heat dissipation pad 383 of each photoelectric element unit U, and exposes a portion of the first heat dissipation pad 383.

Next, as shown in FIGS. 5D-5E, a fifth electrode 40 and a sixth electrode 42 are formed to be electrically connected to the third electrode 381 and the fourth electrode 382, respectively. In one embodiment, the fifth electrode 40 and a sixth electrode 42 can also be selectively electrically connected to at least one first heat dissipation pad 383, respectively, to help follow-up Heat dissipation. In one embodiment, the fifth electrode 40 or the sixth electrode 42 includes a metal reflective layer. In an embodiment, the optical layer 46 is interposed between the third electrode 381 and the fifth electrode 40 and between the fourth electrode 382 and the sixth electrode 42. In one embodiment, the outer boundary of the optical layer 46 is larger than the outer boundary of the substrate 30.

Finally, as shown in Figure 5F, a carrier board or a circuit component P can be provided, and a first carrier electrode E1 and a second carrier board are formed on the carrier board or circuit component P by wire bonding or soldering. Electrode E2. The first carrier electrode E1 and the second carrier electrode E2 can form a flip-chip structure with the fifth electrode 40 and the sixth electrode 42 of the photoelectric element 300'. In one embodiment, the above-mentioned fifth electrode 40 and a sixth electrode 42 extend beyond the outer boundary of the substrate 30. In one embodiment, the projection area of the fifth electrode 40 and the sixth electrode 42 on the surface of the vertical substrate 30 is larger than the area of the substrate 30. In this embodiment, by enlarging the area of the fifth electrode 40 and the sixth electrode 42, the subsequent connection with the carrier board or the circuit element P can be more convenient, and the alignment trouble can be reduced.

FIGS. 6A to 6F are side views and top views showing the manufacturing process of the optoelectronic device according to the third embodiment of the present invention. The photoelectric element 400 is a modified example of the second embodiment described above. Figures 6A-6B are made after continuation of Figures 5A-5B above, and the manufacturing method, materials, and labels are the same as those in the first embodiment, and will not be repeated here. In the top view of this embodiment, in order to clearly show the difference from the above-mentioned embodiment, some elements are omitted to keep the drawing concise. Those with ordinary knowledge in this technical field should be able to compare the above-mentioned embodiment. And fully understand the description of this embodiment.

As shown in FIGS. 6A-6B, this embodiment includes a supporting element 44 formed on the substrate 30 of the above-mentioned optoelectronic element and covering the sidewall of the substrate 30. Then, a second heat dissipating pad 48 is formed on the photoelectric element and the supporting element 44 mentioned above. In one embodiment, the second heat dissipation pad 48 and the first heat dissipation pad 383 may be formed simultaneously in the same process or separately formed in different processes. In an embodiment, the second heat dissipation pad 48 and the first heat dissipation pad 383 may have the same material. In one embodiment, the material of the second heat dissipation pad 48 may be a material with a thermal conductivity of >50 W/mk or an insulating material, such as metal or diamond-like carbon.

In this embodiment, the second heat dissipating pad 48 includes two first parts 482 formed on the supporting element 44 and a second part 481 formed on the photoelectric element and connected to the two ends of the second part 482. The two first parts 481 form a dumbbell shape. In one embodiment, the first part 482 has a width greater than a width of the second part 481.

In one embodiment, the second heat dissipation pad 48 is formed between the two optoelectronic element units U, and does not directly contact the first heat dissipation pad 383, nor is it electrically connected to the first heat dissipation pad 383. In one embodiment, the second heat dissipation pad 48 is formed on the second insulating layer 363 between the two optoelectronic element units U.

Then, as shown in Figs. 6C-6D, an optical layer 46 can be formed on the second insulating layer 363 of the above-mentioned optical element and cover each photoelectric element unit U, the first contact photoelectric element unit U1, and the second contact photoelectric element unit U1. The element unit U2 and the second heat dissipation pad 48 described above. The material of the optical layer 46 may include a mixture of a matrix and a high-reflectivity substance, wherein the matrix may be silicone resin, epoxy resin or other materials, and the high-reflectivity substance may be TiO2.

Next, a plurality of openings 461 are formed on the optical layer 46, and the plurality of openings correspond to the positions of the third electrode 381 and the fourth electrode 382 of the first contact photoelectric element unit U1 and the second contact photoelectric element unit U2, and The third electrode 381 and the fourth electrode 382 are exposed. In one embodiment, the opening 461 also corresponds to the position of the first heat dissipation pad 383 of each photoelectric element unit U, and exposes a portion of the first heat dissipation pad 383.

Next, as shown in FIGS. 6E-6F, a fifth electrode 40 and a sixth electrode 42 are formed to be electrically connected to the third electrode 381 and the fourth electrode 382, respectively. In an embodiment, the fifth electrode 40 and a sixth electrode 42 can also be selectively connected to at least one first heat dissipation pad 383 and second heat dissipation pad 48 respectively to help subsequent heat dissipation, thereby completing the present embodiment Fabrication of photoelectric element 400. In one embodiment, the fifth electrode 40 or the sixth electrode 42 includes a metal reflective layer. In one embodiment, the optical layer 46 is interposed between the Between the third electrode 381 and the fifth electrode 40 and between the fourth electrode 382 and the sixth electrode 42. In one embodiment, the outer boundary of the optical layer 46 is larger than the outer boundary of the substrate 30.

In one embodiment, a carrier board or a circuit component (not shown) may be provided, and a first carrier electrode (not shown) and a The second carrier electrode (not shown). The first carrier electrode and the second carrier electrode can form a flip-chip structure with the fifth electrode 40 and the sixth electrode 42 of the optoelectronic device 400. In one embodiment, the above-mentioned fifth electrode 40 and a sixth electrode 42 extend beyond the outer boundary of the substrate 30. In one embodiment, the projection area of the fifth electrode 40 and the sixth electrode 42 on the surface of the vertical substrate 30 is larger than the area of the substrate 30. In this embodiment, by enlarging the area of the fifth electrode 40 and the sixth electrode 42, the subsequent connection with the carrier board or the circuit element can be more convenient, and the alignment trouble can be reduced.

Figs. 7A to 7D show a manufacturing flow chart of the optoelectronic device according to the fourth embodiment of the present invention. As shown in FIG. 7A, this embodiment includes a substrate (not shown). The substrate is not limited to a single material, and may also be a composite substrate composed of a plurality of different materials. For example, the substrate may include two first substrate and second substrate (not shown) that are joined to each other.

Then, a conventional epitaxial growth process is used on the substrate to form an epitaxial stack, which includes a first semiconductor layer 321, an active layer (not shown), and a second semiconductor layer 323. Then, a trench S is formed to expose part of the first semiconductor layer 321, and a first insulating layer 361 is formed on the sidewall of the trench to electrically isolate the active layer and the second semiconductor layer 323. In one embodiment, a metal layer may be formed in the trench S to form a first extension electrode (not shown). Then, a first electrode 341 is formed on the first extension electrode and a second electrode 342 is formed on the second semiconductor layer 323. In one embodiment, the first electrode 341 or the second electrode 342 may be a multilayer structure and/or include a metal reflective layer (not shown), and the reflectivity is greater than 80%.

Then, as shown in FIG. 7B, a supporting element 44 can be formed on the substrate and cover the sidewall of the substrate. In one embodiment, the supporting element 44 can be transparent, and the material can be silicone resin, epoxy Resin or other materials. In one embodiment, a light guide element (not shown) can be formed on the support element 44. In one embodiment, the material of the light guide element can be glass. Then, a second heat dissipating pad 48 is formed on the photoelectric element and the supporting element 44 mentioned above. In one embodiment, the material of the second heat dissipation pad 48 may be a material with a thermal conductivity of >50W/mk, such as metal; the material of the second heat dissipation pad 48 may also be an insulating material such as diamond-like carbon), diamond, etc.

In this embodiment, the second heat dissipating pad 48 includes two first parts 482 formed on the supporting element 44 and a second part 481 formed on the photoelectric element and connected to the two ends of the second part 482. The two first parts 481 form a dumbbell shape. In one embodiment, the first part 482 has a width greater than a width of the second part 481.

In one embodiment, the second heat dissipation pad 48 is formed between the first electrode 341 and the second electrode 342, and does not directly contact the first electrode 341 or the second electrode 342, nor does it contact the first electrode 341 or the second electrode 342 directly. The second electrode 342 is electrically connected.

Then, an optical layer 46 can be formed on the optical element and cover the second heat dissipation pad 48, the first electrode 341, and the second electrode 342. The material of the optical layer 46 may include a mixture of a matrix and a high-reflectivity substance, wherein the matrix may be silicone resin, epoxy resin or other materials, and the high-reflectivity substance may be TiO2.

Next, a plurality of openings 461 are formed on the optical layer 46, and the plurality of openings correspond to the positions of the first electrode 341 and the second electrode 342, and expose part of the first electrode 341 and the second electrode 342.

Next, as shown in FIG. 7D, a fifth electrode 40 and a sixth electrode 42 are formed to be electrically connected to the first electrode 341 and the second electrode 342, respectively, to complete the fabrication of the optoelectronic device 500 of this embodiment. In an embodiment, the above-mentioned fifth electrode 40 and a sixth electrode 42 can also be selectively connected to the second heat dissipation pad 48 to help subsequent heat dissipation. In one embodiment, the fifth electrode 40 or the sixth electrode 42 includes a metal Shooting layer. In an embodiment, the optical layer 46 is interposed between the first electrode 341 and the fifth electrode 40 and between the second electrode 342 and the sixth electrode 42. In one embodiment, the outer boundary of the optical layer 46 is larger than the outer boundary of the substrate.

In one embodiment, a carrier board or a circuit component (not shown) may be provided, and a first carrier electrode (not shown) and a The second carrier electrode (not shown). The first carrier electrode and the second carrier electrode can form a flip-chip structure with the fifth electrode 40 and the sixth electrode 42 of the optoelectronic device 500. In one embodiment, the above-mentioned fifth electrode 40 and a sixth electrode 42 extend beyond the outer boundary of the substrate. In one embodiment, the projection area of the fifth electrode 40 and the sixth electrode 42 perpendicular to the surface of the substrate is larger than the area of the substrate. In this embodiment, by enlarging the area of the fifth electrode 40 and the sixth electrode 42, the subsequent connection with the carrier board or the circuit element can be more convenient, and the alignment trouble can be reduced.

8A to 8C are schematic diagrams showing a light-emitting module, and FIG. 8A is an external perspective view of a light-emitting module. A light-emitting module 600 may include a carrier 502, a photoelectric element (not shown), and a plurality of There are two lenses 504, 506, 508 and 510, and two power supply terminals 512 and 514. The light-emitting module 500 can be connected to the light-emitting unit 540 described later.

Figures 8B-8C show a cross-sectional view of a light-emitting module 600, wherein Figure 8C is an enlarged view of area E in Figure 8B. The carrier 502 may include an upper carrier 503 and a download body 501, wherein a surface of the download body 501 can be in contact with the upper carrier 503. The lenses 504 and 508 are formed on the upper carrier 503. The upper carrier 503 can form at least one through hole 515, and the photoelectric element 300 formed according to the embodiment of the present invention or other photoelectric elements (not shown) can be formed in the through hole 515 and contact the download body 501, and be Surrounded by glue 521. There is a lens 508 on the glue material 521, wherein the material of the glue material 521 can be silicone resin, epoxy resin or other materials. In one embodiment, a reflective layer 519 can be formed on the two sidewalls of the through hole 515 to increase the light extraction efficiency; a metal layer 517 can be formed on the lower surface of the download body 501 to improve the heat dissipation efficiency.

Figures 9A-9B illustrate a schematic diagram 700 of a light source generating device. A light source generating device 700 may include a light emitting module 600, a light emitting unit 540, and a power supply system (not shown) to supply the light source. The optical module 600 has a current and a control element (not shown) for controlling the power supply system (not shown). The light source generating device 700 may be a lighting device, such as a street lamp, a car lamp, or an indoor lighting source, or a traffic sign or a backlight source of a backlight module in a flat-panel display.

Figure 10 shows a schematic diagram of a light bulb. The bulb 800 includes a housing 921, a lens 922, an illumination module 924, a bracket 925, a heat sink 926, a serial connection portion 927 and an electrical serial connector 928. The lighting module 924 includes a carrier 923, and at least one photoelectric element 300 in the above-mentioned embodiment or photoelectric element of other embodiments (not shown) is contained on the carrier 923.

Specifically, the substrate 30 is a growth and/or bearing foundation. Candidate materials may include conductive substrates or non-conductive substrates, light-transmitting substrates or non-light-transmitting substrates. One of the conductive substrate materials can be germanium (Ge), gallium arsenide (GaAs), indium phosphorus (InP), silicon carbide (SiC), silicon (Si), lithium aluminate (LiAlO2), zinc oxide (ZnO) , Gallium nitride (GaN), aluminum nitride (AlN), metal. One of the transparent substrate materials can be sapphire (Sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), glass, diamond, CVD diamond, and diamond-like carbon (Diamond-Like Carbon; DLC), spinel (spinel, MgAl2O4), alumina (Al2O3), silicon oxide (SiOX) and lithium gallate (LiGaO2).

The epitaxial stack (not shown) includes a first semiconductor layer 321, an active layer 322, and a second semiconductor layer 323. The first semiconductor layer 321 and the second semiconductor layer 323 are, for example, a cladding layer or a confinement layer, a single layer or a multilayer structure. The above-mentioned first semiconductor layer 331 and the second semiconductor layer 323 are different in electrical properties, polarity or dopants, and their electrical properties can be a combination of at least any two of p-type, n-type, and i-type, which can be provided separately Electrons and holes combine in the active layer 322 to emit light. The materials of the first semiconductor layer 321, the active layer 322, and the second semiconductor layer 323 may include III-V semiconductor materials, such as AlxInyGa(1-xy)N or AlxInyGa(1-xy)P, where 0≦x,y ≦1; (x+y)≦1. According to the material of the active layer 322, the epitaxial stack The layer can emit red light with wavelengths between 610nm and 650nm, green light with wavelengths between 530nm and 570nm, blue light with wavelengths between 450nm and 490nm, or ultraviolet light with wavelengths less than 400nm.

In another embodiment of the present invention, the optoelectronic device 300, 300', 400, 500 may be an epitaxial element or a light emitting diode, and its light emission spectrum can be changed by changing the physical or chemical elements of the semiconductor single layer or multilayer Make adjustments. The single-layer or multi-layer semiconductor material can be selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), and oxygen (O). The structure of the active layer 322 is such as: single heterostructure (SH), double heterostructure (DH), double-side double heterostructure (DDH), or multi-layer quantum well (multi- quantum well; MQW) structure. Furthermore, adjusting the logarithm of the quantum well of the active layer 322 can also change the emission wavelength.

In an embodiment of the present invention, a buffer layer (not shown) may optionally be included between the first semiconductor layer 321 and the substrate 30. The buffer layer is between the two material systems, so that the material system of the substrate 30 "transitions" to the material system of the first semiconductor layer 321. For the structure of the light-emitting diode, on the one hand, the buffer layer is a material layer used to reduce the lattice mismatch between the two materials. On the other hand, the buffer layer can also be a single layer, multi-layer or structure used to combine two materials or two separate structures. The materials that can be used include organic materials, inorganic materials, metals, and semiconductors; The selected structure is such as: reflective layer, thermal conductive layer, conductive layer, ohmic contact layer, anti-deformation layer, stress release layer, stress adjustment layer, bonding layer, wavelength Conversion layer, and mechanical fixing structure, etc. In one embodiment, the material of the buffer layer can be selected from aluminum nitride or gallium nitride, and the buffer layer can be formed by sputtering or atomic layer deposition (ALD).

A contact layer (not shown) can be formed more selectively on the second semiconductor layer 323. The contact layer is disposed on a side of the second semiconductor layer 323 away from the active layer 322. Specifically, the contact layer may be an optical layer, an electrical layer, or a combination of the two. The optical layer system can change the electricity coming from or entering the active layer. Magnetic radiation or light. "Change" as used herein refers to changing at least one optical characteristic of electromagnetic radiation or light. The aforementioned characteristics include, but are not limited to, frequency, wavelength, intensity, flux, efficiency, color temperature, rendering index, and light field. (light field), and angle of view. The electrical layer system can make the value, density, and distribution of at least one of the voltage, resistance, current, and capacitance between any set of opposite sides of the contact layer change or have a tendency to change. The constituent materials of the contact layer include oxides, conductive oxides, transparent oxides, oxides with a transmittance of 50% or more, metals, relatively light-transmitting metals, metals with a transmittance of 50% or more, organic substances, At least one of inorganic substances, phosphors, phosphors, ceramics, semiconductors, doped semiconductors, and undoped semiconductors. In some applications, the material of the contact layer is at least one of indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. If it is a relatively light-transmitting metal, its thickness is preferably about 0.005 μm to 0.6 μm.

Although the above drawings and descriptions only correspond to specific embodiments respectively, however, the elements, implementations, design criteria, and technical principles described or disclosed in the various embodiments are in conflict with each other, contradictory, or difficult to implement together. In addition, we should be free to refer to, exchange, match, coordinate, or merge as needed. Although the present invention has been described above, it is not intended to limit the scope of the present invention, the order of implementation, or the materials and manufacturing methods used. Various modifications and changes made to the present invention do not depart from the spirit and scope of the present invention.

321‧‧‧First semiconductor layer

323‧‧‧Second semiconductor layer

S‧‧‧ditch

361‧‧‧First insulation layer

44‧‧‧Supporting element

482‧‧‧The first part of the second cooling pad

481‧‧‧Second part of second cooling pad

Claims (10)

A photoelectric element comprising: a plurality of photoelectric element units including a first photoelectric element unit, a second photoelectric element unit, and a plurality of third photoelectric element units, wherein the first photoelectric element unit and the second photoelectric element unit, Each of the plurality of third optoelectronic element units includes a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a plurality of second electrodes are respectively Formed on the first optoelectronic element unit, the second optoelectronic element unit, and the plurality of third optoelectronic element units, and are electrically connected to the first optoelectronic element unit, the second optoelectronic element unit, and the plurality of third optoelectronic element units, respectively Three optoelectronic element units; a plurality of heat dissipation pads are respectively formed on the plurality of third optoelectronic element units, and are electrically insulated from each of the plurality of third optoelectronic element units; and a plurality of conductive wiring structures are electrically connected to the The first optoelectronic element unit, the second optoelectronic element unit, and the plurality of third optoelectronic element units, wherein in a top view of the optoelectronic element, the plurality of heat dissipation pads do not overlap with the plurality of conductive wiring structures, and the In a cross-sectional view of the optoelectronic element, the plurality of heat dissipation pads overlap with the plurality of second electrodes formed on the plurality of third optoelectronic element units, but do not overlap with the plurality of conductive wiring structures. As described in the first item of the scope of patent application, the optoelectronic element further includes a plurality of first electrodes formed on the first optoelectronic element unit, the second optoelectronic element unit, and the plurality of third optoelectronic element units, respectively. The first photoelectric element unit, the second photoelectric element unit and the plurality of third photoelectric element units are electrically connected. The optoelectronic element described in item 1 or item 2 of the scope of the patent application further includes a second insulating layer located between each of the plurality of heat dissipation pads and each of the second semiconductor layers of each of the plurality of third optoelectronic element units . As described in the first item of the patent application, the plurality of heat dissipation pads include gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), Nickel (Ni), titanium (Ti), tin (Sn), or alloys thereof. The optoelectronic device according to claim 1, wherein the second semiconductor layer has a first surface area, and each of the plurality of heat dissipation pads is formed on the second semiconductor layer of each of the plurality of third optoelectronic device units Each has a second surface area, and the ratio of the second surface area to the first surface area is 80-100%. As described in the first item of the patent application, the photoelectric element further includes a third electrode formed on the first photoelectric element unit and electrically connected to the first photoelectric element unit; and a fourth electrode is formed on the first photoelectric element unit. The second electrode of the two photoelectric element units is electrically connected to the second photoelectric element unit, wherein the third electrode, the fourth electrode and the plurality of heat dissipation pads have the same laminated structure. As described in the first item of the patent application, the photoelectric element further includes a first insulating layer and a second insulating layer located on opposite sides of one of the plurality of conductive wiring structures, wherein the second insulating layer includes a thickness greater than the One thickness of the first insulating layer. The optoelectronic element described in item 1 or 6 of the scope of patent application further includes a substrate, wherein the first optoelectronic element unit, the second optoelectronic element unit, and the plurality of third optoelectronic element units are located on a first side of the substrate. Side; and a supporting element includes a transparent material, formed on a second side of the substrate and covering a side wall of the substrate. As described in item 8 of the scope of patent application, the optoelectronic element further includes a fifth electrode and a sixth electrode electrically connected to the third electrode and the fourth electrode, respectively. In a top view of the optoelectronic element, the first electrode The projection area of the five electrodes and the sixth electrode on a surface perpendicular to the substrate is larger than the area of the surface of the substrate. As described in item 8 of the scope of patent application, the optoelectronic element further includes an optical layer including TiO ₂ covering the first optoelectronic element unit, the second optoelectronic element unit, and the plurality of third optoelectronic element units, wherein the optical layer includes TiO 2 In a plan view of one of the elements, the optical layer has a second outer boundary, and the perimeter of the second outer boundary of the optical layer is greater than the perimeter of an outer boundary of the substrate.

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