JP6529223B2 - Photoelectric parts - Google Patents

Description

  The present invention relates to a light emitting component, and more particularly to a light emitting component having a heat dissipating mat.

  The light emission principle of a light emitting diode (LED) is to emit energy in the form of light due to an energy difference when electrons move between an n-type semiconductor and a p-type semiconductor. The light emitting diode is also referred to as a cold light source because the light emitting principle of the light emitting diode is different from the light emitting principle of the incandescent lamp. Light-emitting diodes have the advantages of high durability, long life, small size and light weight, and low electrical consumption, so light-emitting diodes are highly expected in the current lighting field, which is a next-generation lighting device. I consider it as. Light emitting diodes tend to use conventional light sources instead and are applied in various fields. For example, it is applied to traffic lights, back lights, street lamps, medical equipment and the like.

  FIG. 1 is a view showing the structure of a conventional light emitting component. As shown in FIG. 1, the conventional light emitting component 100 includes a transparent substrate 10, a semiconductor laminate 12 located on the transparent substrate 10, and at least one electrode 14 located on the semiconductor laminate 12. The semiconductor stack 12 includes at least a first conductivity type semiconductor layer 120 provided from top to bottom, an active layer 122, a second conductivity type semiconductor layer 124, and the like.

  A light emitting device (Light Emitting Device) can be further formed by combining the light emitting component 100 with other components. FIG. 2 is a view showing the structure of a conventional light emitting device. As shown in FIG. 2, the light emitting device 200 includes a sub mount 20, at least one solder 22, and an electrical connection structure 24. The sub mounting plate 20 comprises at least one electronic circuit 202. The solder 22 is located on the sub mounting plate 20. By bonding and fixing the light emitting component 100 on the sub mounting plate 20 with the solder 22, the substrate 10 of the light emitting component 100 and the electronic circuit 202 on the sub mounting plate 20 are electrically connected. The electrical connection structure 24 electrically connects the electrode 14 of the light emitting component 100 and the electronic circuit 202 on the sub mounting plate 20. When the sub mounting plate 20 is a lead frame or a mounting substrate having a large size, the electronic circuit of the light emitting device 200 can be easily disposed, and the heat radiation effect can be improved. .

  In order to solve the above-mentioned problems, the present invention provides the following photoelectric components.

  The photoelectric component of the present invention comprises a substrate having a first side and a second side and a first side edge opposite to the first side, a light emitting diode unit formed on the first side, and the light emitting diode A heat sink formed between the first electrode electrically connected to the unit, the second electrode electrically connected to the light emitting diode unit, and the first electrode and the second electrode, and electrically insulated from the light emitting diode unit And mat.

It is a figure which shows the side structure of the conventional light emitting component. It is a figure which shows the structure of the conventional light-emitting device. FIG. 1 is a plan view showing a photoelectric component according to a first embodiment of the present invention. FIG. 1 is a side view showing a photoelectric component according to a first embodiment of the present invention. FIG. 1 is a side view showing a photoelectric component according to a first embodiment of the present invention. It is a top view which shows the structure of the photoelectric component unit which concerns on the other Example of this invention. It is a top view which shows the structure of the photoelectric component unit which concerns on the other Example of this invention. It is a top view which shows the structure of the photoelectric component unit which concerns on the other Example of this invention. It is a top view which shows the structure of the photoelectric component unit which concerns on the other Example of this invention. It is a top view which shows the structure of the photoelectric component unit which concerns on the other Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 2nd Example of this invention. It is a side view which shows the structure of the photoelectric component which concerns on 2nd Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 2nd Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 2nd Example of this invention. It is a side view which shows the structure of the photoelectric component which concerns on 2nd Example of this invention. It is a side view which shows the structure of the photoelectric component which concerns on 2nd Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 3rd Example of this invention. It is a side view which shows the structure of the photoelectric component which concerns on 3rd Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 3rd Example of this invention. It is a side view which shows the structure of the photoelectric component which concerns on 3rd Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 3rd Example of this invention. It is a side view which shows the structure of the photoelectric component which concerns on 3rd Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 4th Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 4th Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 4th Example of this invention. It is a top view which shows the structure of the photoelectric component which concerns on 4th Example of this invention. It is a perspective view which shows the light emitting module of this invention. It is side surface sectional drawing which shows the light emitting module of this invention. It is side surface sectional drawing which shows the light emitting module of this invention. It is a perspective view which shows the light ray generation apparatus of this invention. It is a bottom view which shows the light ray generation apparatus of this invention. It is an exploded perspective view showing a light bulb of the present invention.

  The present invention discloses a light emitting component and a method of manufacturing the same. In order to explain the invention in more detail, it will be described with reference to the following examples and FIGS. 3A-10.

  FIGS. 3A and 3B are a plan view and a side view, respectively, showing a photoelectric component 300 according to a first embodiment of the present invention. The optoelectronic component 300 comprises one substrate 30. The substrate 30 is not limited to a substrate made of a single material, but may be a composite substrate made of a plurality of different materials. For example, substrate 30 can include a bonded first substrate and a second substrate (not shown).

  Then, on the substrate 30, a plurality of matrix photoelectric component units U arranged in a stretched state, one first contact photoelectric component unit U1, and one second contact photoelectric component unit U2 are formed. The manufacturing method of the matrix photoelectric component unit U, the first contact photoelectric component unit U1, and the second contact photoelectric component unit U2 is, for example, as follows.

  First, an epitaxial stack is formed on the substrate 30 by a conventional epitaxial growth method. This epitaxial lamination includes a first semiconductor layer 321, an active layer 322, and a second semiconductor layer 323.

  Next, as shown in FIG. 3B, a plurality of photoelectric component units U separately arranged on the growth substrate by removing a part of the epitaxial stack by lithography process technology and one first contact photoelectric component unit While forming U1 and one second contact photoelectric component unit U2, at least one groove 渠 S is formed. In this embodiment, the trench S includes exposed areas obtained by etching the first semiconductor layers 321 of the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 by lithography process technology. The exposure area is later based on forming a conductive wire.

In another embodiment, the photoelectric component unit U, the first contact photoelectric component unit U1, and the second contact photoelectric component unit are moved by technology of moving the epitaxial lamination or bonding the substrates to increase the light extraction efficiency of the entire component. An epitaxial stack of U 2 can be provided on the substrate 30. Epitaxial lamination of the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 is directly bonded to the substrate 30 by a heating or pressing method, or the photoelectric component is formed by a transparent adhesive layer (not shown) The epitaxial stack of the unit U, the first contact optoelectronic component unit U1 and the second contact optoelectronic component unit U2 can be adhered to the substrate 30. The transparent adhesive layer is made of an organic polymer transparent material, such as polyimide (benzo), benzocyclobutane (BCB), perfluorocyclobutane (PFCB), epoxy (epoxy), acrylic resin, polyethylene terephthalate A material such as (PET), polycarbonate resin (PC) or a combination thereof or a transparent conductive metal oxide layer such as indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO ₂ ), Materials such as zinc oxide (ZnO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), tin-cadmium oxide (CTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), etc. Include these combinations, or Inorganic insulating layer, for example aluminum oxide _{(Al 2 O} 3), silicon nitride _(SiN x), silicon dioxide _(SiO 2), aluminum nitride (AlN), titanium oxide _(TiO 2), tantalum pentoxide (Tantalun Pentoxide, Ta Materials such as ₂ O ₅ ) or combinations thereof may be included. In this embodiment, the substrate 30 comprises a wavelength modifying material.

  In practical applications, the method of providing the epitaxial lamination of the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 on the substrate 30 is not limited to the above-mentioned contents. It can be easily understood by those who have knowledge. In this embodiment, the second semiconductor layer 323 is adjacent to the substrate 30, the first semiconductor layer 321 is located on the second semiconductor layer 323, and the intermediate layer is the active layer 322 because the number of movements of the substrate 30 is different. Can be formed.

  Next, a part of the epitaxial lamination of the first contact optoelectronic component unit U1 and the second contact optoelectronic component unit U2 by methods such as chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering, etc. The first insulating layer 361 is formed between the surface of the first layer and the epitaxial lamination of the adjacent photoelectric component unit U. This first insulating layer serves as a protective layer of the epitaxial stack and an electrical insulating layer between two adjacent photoelectric component units U. Next, a plurality of conductive wiring structures completely separated from each other on the surface of the first semiconductor layer 321 and the surface of the second semiconductor layer 323 of two adjacent photoelectric component units U adjacent to each other by vapor deposition or sputtering. Form 362. The plurality of conductive wiring structures 362 completely separated from each other are disposed on the first semiconductor layer 321 such that one end faces in the same direction, and the plurality of conductive wiring structures 362 are mutually separated by the first semiconductor layer 321 Electrically connected. Each conductive wiring structure 362 which is spatially separated from each other is extended onto the second semiconductor layer 323 of the other adjacent photoelectric component unit U, and the other end is electrically connected to the second semiconductor layer 323 of the photoelectric component unit U Thereby, the electrical connection between the two adjacent photoelectric component units U is realized.

  Those skilled in the art can easily understand that the method of electrically connecting two adjacent photoelectric component units U is not limited to the above. For example, the photoelectric component units U can be electrically connected in parallel or in series by respectively connecting both ends of the conductive wiring structure on semiconductor layers having different or similar conductive polarities of different photoelectric component units.

  As shown in FIGS. 3A-3B, the optoelectronic component 300 is a matrix arranged in a row in an electronic circuit. The first electrode 341 is formed on the first semiconductor layer 321 of the photoelectric component unit U, the first contact photoelectric component unit U1, and the second contact photoelectric component unit U2, and the second electrode 342 is formed on the second semiconductor layer 323. Do. The step of forming the first electrode 341 and the second electrode 342 may be performed together with the step of forming the conductive wiring structure 362 or may be performed separately in different steps. The material forming the first electrode 341 and the second electrode 342 is the same as or different from the material forming the conductive wiring structure 362. In this embodiment, the second electrode 342 is a multilayer structure and / or includes a metal reflective layer (not shown) and has a reflectivity of greater than 80%. In another embodiment, the conductive interconnect structure 362 is a metal reflective layer and can have a reflectivity of greater than 80%.

Next, as shown in FIG. 3B, a second insulating layer 363 is formed on the plurality of conductive wiring structures 362, a portion of the first insulating layer 361, and a sidewall of a portion of the epitaxial stack. In this embodiment, the first insulating layer 361 and the second insulating layer 363 can be transparent insulating layers. The material of the first insulating layer 361 and the second insulating layer 363 may be an oxide, a nitride or a polymer. The oxide may be aluminum oxide (Al ₂ O ₃ ), silicon dioxide (SiO ₂ ), titanium oxide (TiO ₂ ), tantalum pentoxide (Tantalun Pentoxide, Ta ₂ O ₅ ) or aluminum oxide (AlO _x ), etc. Materials or combinations thereof, wherein the nitride comprises materials such as aluminum nitride (AlN), silicon nitride (SiN _x ), etc. or combinations thereof, the polymer is polyimide, benzocyclobutene, Materials such as BCB) etc. or combinations thereof can be included. In this embodiment, the second insulating layer 363 may be a Distributed Bragg Reflector. In this embodiment, the thickness of the second insulating layer 363 is thicker than the thickness of the first insulating layer 361.

  Finally, a third electrode 381 is formed on the first electrode 341, a fourth electrode 382 is formed on the second electrode 342, and at least one first on the second semiconductor layer 323 of the electro-optical component unit U. A heat dissipation mat 383 is formed. The first heat radiation mat 383 is electrically insulated from the second semiconductor layer 323 of the electro-optical component unit U by the second insulating layer 363. In this embodiment, the projection of the first heat radiation mat 383 projected perpendicularly to the surface of the substrate 30 is not located on the first insulating layer 361. In this embodiment, the first heat dissipating mat 383 is formed on a flat surface. As shown in FIG. 3A, in the photoelectric component 300 of this embodiment, each of the second semiconductor layers 323 of each of the light-emitting component units U has a first heat radiation mat 383 and these first heat radiation mats 383 have a second insulation. The layer 363 electrically insulates from the second semiconductor layer 323 of the electro-optical component unit U.

  In this embodiment, the third electrode 381, the fourth electrode 382, and the first heat dissipating mat 383 may be formed in the same manufacturing step or separately in different manufacturing steps. In this embodiment, the third electrode 381, the fourth electrode 382, and the first heat radiation mat 383 may have the same laminated structure. A metal can be used as a material of the first electrode 341, the second electrode 342, the conductive wiring structure 362, the third electrode 381, the fourth electrode 382, and the first heat radiation mat 383 in order to maintain a predetermined conductivity. For example, gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), etc. Or their alloys or their laminated structure.

  In this embodiment, the second semiconductor layer 323 has an upper surface and a first surface area, the first heat radiation mat 383 has a second surface area, and the ratio of the second surface area to the first surface area is It is in the range of 80 to 100%. In this embodiment, the shortest distance D is formed between the edges of two adjacent first heat radiation mats 383, and the shortest distance D is greater than 100 μm.

  In this embodiment, as shown in FIG. 3C, the mounting plate or circuit component P is provided, and the first mounting plate electrode E1 and the second mounting plate are mounted on the mounting plate or circuit component P by wire bonding or soldering. The placing plate electrode E2 is formed. The first mounting plate electrode E1 and the second mounting plate electrode E2 and the third electrode 381 and the fourth electrode 382 of the photoelectric component 300 form a flip chip structure.

  In this embodiment, the first mounting plate electrode E1 is electrically connected to the third electrode 381 and the first heat radiation mat 383 of the photoelectric component 300, and the second mounting plate electrode E2 is connected to the fourth electrode 382 and the first heat radiation mat. Electrical connection to 383 can form a flip chip structure. In this embodiment, since the first heat radiation mat 383 is electrically connected to the first placement plate electrode E1 and the second placement plate electrode E2, the heat radiation effect can be improved. In this embodiment, when the respective photoelectric component units U of the photoelectric components 300 arranged in a series matrix operate, a voltage difference occurs to some extent, so that the electrical insulation between the first heat radiation mat 383 and the photoelectric component unit U Thus, it is possible to prevent breakdown or electrical leakage from occurring between any of the photoelectric component units U due to the voltage difference during operation. In addition, since the projection of the first heat radiation mat 383 projected vertically onto the surface of the substrate 30 is not located on the first insulating layer 361, it is possible to prevent the wire from being cut due to the difference in the groove height S or Insufficient insulation of the insulating layer 361 can prevent the occurrence of electrical leakage or short circuit.

  4A to 4E are plan views showing the structure of an optoelectronic component unit according to another embodiment of the present invention. The photoelectric component unit shown in FIGS. 4A to 4E is a modification of the photoelectric component unit according to the first embodiment of the present invention, and the manufacturing method, the materials used, the reference numerals and the like are the same as in the first embodiment. I do not explain.

  As shown in FIG. 4A, the photoelectric component unit U, the first contact photoelectric component unit U1, and the second contact photoelectric component unit U2 are linearly arranged. In this embodiment, the first electrode 341 or the second electrode 342 of the optoelectronic component unit U, the first contact optoelectronic component unit U1 and the second contact optoelectronic component unit U2 further includes an extension electrode 3421. Thereby, the current distribution of the photoelectric component unit U, the first contact photoelectric component unit U1, and the second contact photoelectric component unit U2 can be increased. As can be easily understood by those skilled in the art, the shape of the elongated electrode is not limited to the shape shown in the drawings, but can be freely provided depending on the difference in products. Also, the shape of the first heat radiation mat 383 formed in the first contact photoelectric component unit U1 can be appropriately adjusted according to the shape of the extension electrode. That is, the conductive wiring structure 362 may not be in direct contact with the first electrode 341 or the second electrode 342, and may be adjusted to be in an electrically insulated state.

  FIG. 4B is a view showing a modified example of the present invention. In this embodiment, the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 are not arranged in a straight line in the above-described embodiment but are annularly connected, and the first contact photoelectric component At least one side wall of the component unit U1 is connected to the side wall of the second contact photoelectric component unit U2. Further, the shape of the first heat radiation mat 383 formed in the first contact photoelectric component unit U1 can be appropriately adjusted to the shape of the extension electrode. That is, the conductive wiring structure 362 may not be in direct contact with the first electrode 341 or the second electrode 342, and may be adjusted to be in an electrically insulated state.

  FIG. 4C is a view showing a modified example of the present invention. In this embodiment, the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 are annularly connected. Except for the first contact photoelectric component unit U1, the width of the first electrode 341 of the photoelectric component unit U and the second contact photoelectric component unit U2 is narrower than the width of the conductive wiring structure 362, and they are extended to the inside of each unit Current distribution is increased. In addition, the shape of the first heat radiation mat 383 formed in the first contact photoelectric component unit U1 can be appropriately adjusted by the shape of the conductive wiring structure 362 and the shape of the first electrode 341 or the second electrode 342. That is, the conductive wiring structure 362 may not be in direct contact with the first electrode 341 or the second electrode 342, and may be adjusted to be in an electrically insulated state.

  FIG. 4D is a view showing a modified example of the present invention. In this embodiment, the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 are annularly connected, and the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact The shape of the optoelectronic component unit U2 can be respectively adjusted according to the actual demand. That is, their shapes can be adjusted to be different from each other. In this embodiment, three photoelectric component units U having different shapes are provided, but the number of photoelectric component units U can be easily understood by those skilled in the art. The shape, size or arrangement method can be appropriately adjusted by the drive voltage of the product. In addition, the shape of the first heat radiation mat 383 formed in the first contact photoelectric component unit U1 can be appropriately adjusted by the shape of the conductive wiring structure 362 and the shape of the first electrode 341 or the second electrode 342. That is, the conductive wiring structure 362 may not be in direct contact with the first electrode 341 or the second electrode 342, and may be adjusted to be in an electrically insulated state.

  FIG. 4E is a view showing a modified example of the present invention. In this embodiment, the optoelectronic component unit U, the first contact optoelectronic component unit U1 and the second contact optoelectronic component unit U2 are connected in a W-shape. That is, the connection directions of the two adjacent photoelectric component units U are different, and are arranged in a 4-by-4 matrix. As can be easily understood by those skilled in the art, the number or arrangement method of the photoelectric component units U can be appropriately adjusted by the driving voltage of the product. In this embodiment, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 can be formed on the same line when arrayed in the meandering shape, but with the first contact photoelectric component unit U1 and The position with the second contact optoelectronic component unit U2 must take into account the electrical connection with the external electronic circuit to be made later. Therefore, in another embodiment, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2 can be positioned at both ends of the diagonal of the matrix by adjusting the arrangement method of the photoelectric component units U. In addition, the shape of the first heat radiation mat 383 formed in the first contact photoelectric component unit U1 can be appropriately adjusted by the shape of the conductive wiring structure 362 and the shape of the first electrode 341 or the second electrode 342. That is, the conductive wiring structure 362 may not be in direct contact with the first electrode 341 or the second electrode 342, and may be adjusted to be in an electrically insulated state.

  5A to 5E are a plan view and a side view showing a manufacturing process of an optoelectronic component according to a second embodiment of the present invention. The photoelectric component 300 'is a modification of the first embodiment of the present invention. FIGS. 5A-5B are continuations of the manufacturing method shown in FIGS. 3A-3B, and the manufacturing method, the materials to be used, the reference numerals and the like are the same as in the first embodiment and will not be described again here. In order to clearly show the difference from the first embodiment described above in the plan view of this embodiment, parts of the parts are not used, and the drawing is simplified. Those skilled in the art can fully understand the present embodiment based on the above-described embodiments.

  As shown in FIGS. 5A-5B, the support component 44 is formed on the substrate 30 and thereby covers the sidewalls of the substrate 30. In this embodiment, the support component 44 is transparent, and silicon resin, epoxy resin or other material can be used as its material. In this embodiment, a light guiding component (not shown) can be further formed on the support component 44, and glass can be used as the material of the light guiding component.

Next, an optical layer 46 is formed on the second insulating layer 363 of the photoelectric component, thereby covering the photoelectric component unit U, the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2. The material of the optical layer 46 comprises a mixture of base material and high reflectivity material. Silicon resin, epoxy resin or other materials can be used as the base material and TiO ₂ can be used as the high reflectivity material.

  Next, as shown in FIG. 5C, a plurality of openings 461 are formed on the optical layer 46. The plurality of openings 461 correspond to the positions of the third electrode 381 and the fourth electrode 382 of the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2, and a part of the third electrode 381 and the fourth electrode 382 Expose the In this embodiment, the opening 461 also corresponds to the position of the first heat radiation mat 383 of the photoelectric component unit U, and exposes a part of the first heat radiation mat 383.

  Next, as shown in FIGS. 5D to 5E, the fifth electrode 40 and the sixth electrode 42 are formed and electrically connected to the third electrode 381 and the fourth electrode 382, respectively. In this embodiment, by electrically connecting the fifth electrode 40 and the sixth electrode 42 to at least one selected first heat radiation mat 383, the heat radiation efficiency can be improved. In this embodiment, the fifth electrode 40 and the sixth electrode 42 include a metal reflective layer. In this embodiment, the optical layer 46 is located between the third electrode 381 and the fifth electrode 40 and between the fourth electrode 382 and the sixth electrode 42. In this embodiment, the edge of the optical layer 46 is larger than the edge of the substrate 30.

  Finally, as shown in FIG. 5F, the mounting plate or circuit component P is provided, and the first mounting plate electrode E1 and the second mounting plate are mounted on the mounting plate or circuit component P by wire bonding or soldering. An electrode E2 is formed. The first mounting plate electrode E1 and the second mounting plate electrode E2 and the fifth electrode 40 and the sixth electrode 42 of the photoelectric component 300 ′ form a flip chip structure. In this embodiment, the fifth electrode 40 and the sixth electrode 42 are formed outside the edge of the substrate 30. In this embodiment, the projected area of the fifth electrode 40 and the sixth electrode 42 projected perpendicularly to the surface of the substrate 30 is larger than the area of the substrate 30. In this embodiment, by enlarging the area of the fifth electrode 40 and the sixth electrode 42, connection with the mounting plate or the circuit component P can be easily performed and positioning can be easily performed.

  6A to 6F are a plan view and a side view showing a manufacturing process of an optoelectronic component according to a third embodiment of the present invention. The photoelectric component 400 is a modification of the second embodiment of the present invention. FIGS. 6A to 6B are continuations of the manufacturing method shown in FIGS. 5A to 5B, and the manufacturing method, the materials to be used, the reference numerals and the like are the same as those of the first embodiment and therefore will not be described again. In order to clearly show the difference from the first embodiment described above in the plan view of this embodiment, parts of the parts are not used, and the drawing is simplified. Those skilled in the art can fully understand the present embodiment based on the above-described embodiments.

  As shown in FIGS. 6A-6B, this embodiment includes a support component 44 formed on the substrate 30 of the optoelectronic component, thereby covering the sidewalls of the substrate 30. Next, a second heat dissipating mat 48 is formed on the photoelectric component and the support component 44. In this embodiment, the second heat dissipating mat 48 and the first heat dissipating mat 383 can be formed in the same manufacturing step or separately in different manufacturing steps. In this embodiment, the material of the second heat dissipating mat 48 and the material of the first heat dissipating mat 383 can be the same. In this embodiment, the material of the second heat dissipating mat 48 can be a material having a heat transfer coefficient> 50 W / mk or an insulating material. For example, it is metal or diamond-like carbon (Diamond-Like Carbon).

  In this embodiment, the second heat dissipating mat 48 comprises two first portions 482 formed on the support component 44 and one second formed on the optoelectronic component and connected at both ends to the first portion 482. And includes a portion 481 and is formed in a dumbbell shape. In this embodiment, the width of the first portion 482 is wider than the width of the first portion 482.

  In this embodiment, the second heat dissipating mat 48 is formed between the two photoelectric component units U and is not directly in contact with the first heat dissipating mat 383 and is electrically connected to the first heat dissipating mat 383. Absent. In this embodiment, the second heat radiation mat 48 is formed on the second insulating layer 363 between the two photoelectric component units U.

Next, as shown in FIG. 6C to FIG. 6D, the optical layer 46 is formed on the second insulating layer 363 of the photoelectric component, and thereby the plurality of photoelectric component units U, the first contact photoelectric component unit U1, the The two-contact photoelectric component unit U2 and the second heat radiation mat 48 are covered. The material of the optical layer 46 comprises a mixture of base material and high reflectivity material. Silicon resin, epoxy resin or other materials can be used as the base material and TiO ₂ can be used as the high reflectivity material.

  Next, a plurality of openings 461 are formed on the optical layer 46. The plurality of openings 461 correspond to the positions of the third electrode 381 and the fourth electrode 382 of the first contact photoelectric component unit U1 and the second contact photoelectric component unit U2, and a part of the third electrode 381 and the fourth electrode 382 Expose the In this embodiment, the opening 461 also corresponds to the position of the first heat radiation mat 383 of the photoelectric component unit U, and exposes a part of the first heat radiation mat 383.

  Next, as shown in FIGS. 6E to 6F, the fifth electrode 40 and the sixth electrode 42 are formed and electrically connected to the third electrode 381 and the fourth electrode 382, respectively. In this embodiment, by electrically connecting the fifth electrode 40 and the sixth electrode 42 to at least one of the first heat radiation mat 383 and the second heat radiation mat 48, the heat radiation efficiency can be improved. Thereby, the manufacture of the photoelectric component 400 of the present embodiment is completed. In this embodiment, the fifth electrode 40 and the sixth electrode 42 include a metal reflective layer. In this embodiment, the optical layer 46 is located between the third electrode 381 and the fifth electrode 40 and between the fourth electrode 382 and the sixth electrode 42. In this embodiment, the edge of the optical layer 46 is larger than the edge of the substrate 30.

  In this embodiment, a mounting plate or circuit component (not shown) is provided, and a first mounting plate electrode (not shown) and a second mounting plate or circuit component are mounted on the mounting plate or circuit component by wire bonding or soldering. A mounting plate electrode (not shown) can be formed. The first mounting plate electrode and the second mounting plate electrode and the fifth electrode 40 and the sixth electrode 42 of the photoelectric component 400 form a flip chip structure. In this embodiment, the fifth electrode 40 and the sixth electrode 42 are formed outside the edge of the substrate 30. In this embodiment, the projected area of the fifth electrode 40 and the sixth electrode 42 projected perpendicularly to the surface of the substrate 30 is larger than the area of the substrate 30. In this embodiment, by enlarging the area of the fifth electrode 40 and the sixth electrode 42, connection with the mounting plate or the circuit component can be easily performed and positioning can be easily performed.

  7A to 7D are diagrams showing a manufacturing flow of an optoelectronic component according to a fourth embodiment of the present invention. The photoelectric component 400 is a modification of the second embodiment of the present invention. As shown in FIG. 7A, this embodiment includes a substrate (not shown). The substrate is not limited to a substrate made of a single material, but may be a composite substrate made of different materials. For example, the substrate can include a bonded first substrate and a second substrate (not shown).

  Next, an epitaxial stack is formed on the substrate by a conventional epitaxial growth method. This epitaxial lamination includes a first semiconductor layer 321, an active layer 322, and a second semiconductor layer 323. Next, a part of the first semiconductor layer 321 is exposed by forming a trench 渠. And, by forming the first insulating layer 361 on the side wall of the trench, electrical insulation between the trench and the active layer and the second semiconductor layer 323 is achieved. In this embodiment, a first stretched electrode (not shown) can be formed by forming a metal layer in the trench ridge S. Next, the first electrode 341 is formed on the first stretched electrode, and the second electrode 342 is formed on the second semiconductor layer 323. In this embodiment, the first electrode 341 and the second electrode 342 have a multilayer structure and / or include a metal reflection layer (not shown) and have a reflectance of more than 80%.

  Next, as shown in FIG. 7B, the support component 44 is formed on the substrate, thereby covering the side wall of the substrate. In this embodiment, the support component 44 is transparent, and silicon resin, epoxy resin or other material can be used as its material. In this embodiment, a light guiding component (not shown) can further be formed on the support component 44, and glass can be used as the material of the light guiding component. Next, a second heat dissipating mat 48 is formed on the photoelectric component and the support component 44. In this embodiment, the material of the second heat dissipating mat 48 can be a material having a heat transfer coefficient> 50 W / mk, for example, a metal. The material of the second heat dissipating mat 48 may be an insulating material, such as Diamond-Like Carbon, Diamond, or the like.

  In this embodiment, the second heat dissipating mat 48 comprises two first portions 482 formed on the support component 44 and a first one formed on the optoelectronic component and connected at both ends on the first portion 482. It includes a two-part 481 and is formed in a dumbbell shape. In this embodiment, the width of the first portion 482 is wider than the width of the first portion 482.

  In this embodiment, the second heat radiation mat 48 is formed between the first electrode 341 and the second electrode 342 and is not in direct contact with the first electrode 341 or the second electrode 342, and the first electrode It is not electrically connected to the electrode 341 or the second electrode 342 either.

Next, an optical layer 46 is formed on the photoelectric component, thereby covering the second heat radiation mat 48, the first electrode 341 and the second electrode 342. The material of the optical layer 46 comprises a mixture of base material and high reflectivity material. Silicon resin, epoxy resin or other materials can be used as the base material and TiO ₂ can be used as the high reflectivity material.

  Next, a plurality of openings 461 are formed on the optical layer 46. The plurality of openings 461 correspond to the positions of the first electrode 341 and the second electrode 342 and expose a part of the first electrode 341 and the second electrode 342.

  Next, as shown in FIG. 7D, the fifth electrode 40 and the sixth electrode 42 are formed and electrically connected to the first electrode 341 and the second electrode 342, respectively. This completes the manufacture of the photoelectric component 500 of this embodiment. In this embodiment, by electrically connecting the fifth electrode 40 and the sixth electrode 42 to the selected second heat radiation mat 48, the heat radiation efficiency can be improved. In this embodiment, the fifth electrode 40 and the sixth electrode 42 include a metal reflective layer. In this embodiment, the optical layer 46 is located between the first electrode 341 and the fifth electrode 40 and between the second electrode 342 and the sixth electrode 42. In this embodiment, the edge of the optical layer 46 is larger than the edge of the substrate 30.

  In this embodiment, a mounting plate or circuit component (not shown) is provided, and a first mounting plate electrode (not shown) and a second mounting plate or circuit component are mounted on the mounting plate or circuit component by wire bonding or soldering. A mounting plate electrode (not shown) can be formed. The first mounting plate electrode and the second mounting plate electrode, and the fifth electrode 40 and the sixth electrode 42 of the photoelectric component 500 form a flip chip structure. In this embodiment, the fifth electrode 40 and the sixth electrode 42 are formed outside the edge of the substrate 30. In this embodiment, the projected area of the fifth electrode 40 and the sixth electrode 42 projected perpendicularly to the surface of the substrate 30 is larger than the area of the substrate 30. In this embodiment, by enlarging the area of the fifth electrode 40 and the sixth electrode 42, connection with the mounting plate or the circuit component can be easily performed and positioning can be easily performed.

  8A to 8C are views showing a light emitting module of the present invention, and FIG. 8A is a perspective view showing the light emitting module. The light emitting module 600 includes a mounting body 502, an optoelectronic component (not shown), a plurality of lenses 504, 506, 508 and 510, and two power supply input ends 512 and 514. The light emitting module 600 is connected to a light emitting unit 540 described later.

  8B-8C are views showing a light emitting module according to the present invention, wherein FIG. 8C is an enlarged view of a section E of FIG. 8B. The mounting body 502 includes an upper mounting body 503 and a lower mounting body 501, and one surface of the lower mounting body 501 is in contact with the upper mounting body 503. Lenses 504 and 508 are formed on the upper mounting body 503. At least one hole 515 is formed in the upper mounting body 503, and the photoelectric component 300 of the embodiment of the present invention or the photoelectric component (not shown) of the other embodiment is in contact with the lower mounting body 501. In the hole 515 and covered with an adhesive 521. A lens 508 is provided on the adhesive 521, and the material of the adhesive 521 is silicon resin, epoxy resin or other material. In this embodiment, the light extraction efficiency is increased by forming the reflective layer 519 on the side walls on both sides of the hole 515, and the heat dissipation effect is improved by forming the metal layer 517 on the lower surface of the lower mounting body 501. Can.

  9A-9B are diagrams showing a light beam generator 700. FIG. The light beam generating apparatus 700 controls a light emitting module 600, a light emitting unit 540, a power supply system (not shown) for providing a predetermined current to the light emitting module 600, and a power supply system (not shown) And a control part (not shown). The light beam generator 700 can be a lighting device. For example, it is a street lamp, a car or a room lighting device, or a traffic signal sign or a backlight of a backlight module of a flat display.

  FIG. 10 is a view showing a light bulb. The light bulb 800 includes a cover 921, a lens 922, a lighting module 924, a frame 925, a radiator 926, an insertion portion 927, and a metal port 928. The lighting module 924 includes a mounting body 923 and at least one photoelectric component 300 according to an embodiment of the present invention or another photoelectric component (not shown) mounted on the mounting unit 923. .

Specifically, substrate 30 provides the basis for epitaxial growth and / or placement. The type of substrate can be a conductive substrate, a nonconductive substrate, a transparent substrate or an opaque substrate. The material of the conductive substrate is germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC), silicon (Si), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), It can be gallium nitride (GaN), aluminum nitride (AlN), metal. The material of the transparent substrate is sapphire (Sapphire), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), gallium nitride (GaN), glass, diamond, CVD diamond, diamond-like carbon (DLC), It can be spinel (spinel, MgAl ₂ O ₄ ), aluminum oxide (Al ₂ O ₃ ), silicon oxide (SiO _x ), lithium gallate (LiGaO ₂ ).

The epitaxial lamination (not shown) includes a first semiconductor layer 321, an active layer 322, and a second semiconductor layer 323. The first semiconductor layer 321 and the second semiconductor layer 323 may have, for example, a cladding layer, a confinement layer, a single layer structure, or a multilayer structure. The type, polarity or impurity of the first semiconductor layer 321 and the second semiconductor layer 323 are different. As the type, it is possible to select that any two of p-type, n-type and i-type are combined, and provide electrons and holes (Electron holes), respectively. The light is reacted in the active layer 322 to emit light. The material of the first semiconductor layer 321, the active layer 322, and the second semiconductor layer 323 can include a group III-V semiconductor material. For example, Al _x In _y Ga _(1-x-y) N or Al _x In _y Ga _(1-x-y) P, and in this chemical formula, 0 ≦ x, y ≦ 1, (x + y) ≦ 1. It is. Depending on the material of the active layer 322, the epitaxial stack emits red light whose wavelength range is between 610 nm and 650 nm, blue light whose wavelength range is between 530 nm and 570 nm, or infrared light whose wavelength is less than 400 nm.

  In another embodiment of the invention, the optoelectronic component 300, 300 ', 400, 500 is an epitaxial source or a light emitting diode, the frequency spectrum of the emitted light being a physical or chemical element in a single layer or multilayer of a semiconductor. It can be adjusted by changing. The material of the single layer or multilayer semiconductor is selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), phosphorus (P), nitrogen (N), zinc (Zn) and oxygen (O) can do. The structure of the active layer 322 may be, for example, a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH) or a multilayer quantum well structure (multi- Quantun well, MQW). Alternatively, the wavelength of the emitted light can be changed by adjusting the logarithm of the quantum well of the active layer 322.

  In an embodiment of the present invention, a buffer layer (not shown) may be further formed between the first semiconductor layer 321 and the substrate 30. By providing this buffer layer between the two materials, a transition from the material system of the substrate 30 to the material system of the first semiconductor layer 321 can be realized. In the construction of a light emitting diode, the buffer layer is a material layer which reduces the mismatch of the crystal lattice between the two materials. Also, the buffer layer can be used to bond two materials or two single layers, multiple layers or structures separated. The material of the buffer layer can be selected, for example, from organic materials, inorganic materials, metals, semiconductors and the like. The structure of the buffer layer is a reflective layer, a heat conductive layer, a conductive layer, an ohmic contact layer, an anti-deformation layer, a stress release layer, a stress adjustment layer, a bonding layer, a wavelength It can be a change layer, a mechanical fastening structure, etc. In this embodiment, the material of the buffer layer is selected from aluminum nitride or gallium nitride, and the buffer layer can be formed by the method of sputtering or atomic layer deposition (ALD).

  A contact layer (not shown) may further be formed on the second semiconductor layer 323. The contact layer is formed on one side of the second semiconductor layer 323 where the active layer 322 is not formed. Specifically, the contact layer can be an optical layer, an electrical layer, or a combination thereof. The optical layer can alter the electromagnetic waves or rays coming from or incident on the active layer. This "modification" refers to modifying at least one optical characteristic of an electromagnetic wave or a light beam. This optical property includes, but is limited to, frequency, wavelength, intensity, mass, high rate, color temperature, rendering index, light field, angle of view, etc. It is not a thing. The electrical layer is such that at least one of the voltage, resistance, current, and capacitance values, density, distribution between any one pair of contact layers and the opposite side thereof changes, or the trend of change is Get out. The material constituting the contact layer is an oxide, a conductive oxide, a transparent oxide, an oxide having a transparency of 50% or more, a metal, a translucent metal, a metal having a transmittance of 50% or more, an organic substance, It may contain at least one of an inorganic substance, a fluorescent substance, a phosphor, a ceramic, a semiconductor, an impurity-containing semiconductor, and an impurity-free semiconductor. In certain applications, the material of the contact layer can be at least one of indium tin oxide, tin cadmium oxide, tin antimony oxide, indium zinc oxide, zinc aluminum oxide, zinc tin oxide. When a translucent metal is employed, its thickness is preferably 0.005 to 0.6 μm.

  Although the embodiments of the invention have been described in detail with reference to the drawings, the embodiments are merely examples of the invention, and the invention is not limited to the configurations of the embodiments. Needless to say, even if there are design changes and the like within the scope of the present invention, they are included in the present invention. Further, for example, in the case where each embodiment includes a plurality of configurations, it goes without saying that possible combinations of these configurations are included even if there is no particular description. In addition, in the case where a plurality of examples and modifications are shown, it is needless to say that possible combinations of configurations across these are included even if there is no description in particular. Further, it goes without saying that the configuration depicted in the drawings is included even if there is no particular description. Furthermore, the term "etc" is used in the sense that it includes the equivalent. Moreover, when there is a term such as "approximately", "about", "degree", etc., it is used in the sense that it includes the range and accuracy that are accepted as common sense.

100, 200, 300, 300`, 400, 500 photoelectric components 10 transparent substrate 12 semiconductor lamination 14, E1, E2 electrode 30 substrate U photoelectric component unit U1 first contact photoelectric component unit U2 second contact photoelectric component unit 321 first semiconductor Layer 322 Active layer 323 Second semiconductor layer S Groove 3421 Stretched electrode 361 First insulating layer 362 Conductive wiring structure 363 Second insulating layer 341 First electrode 342 Second electrode 381 Third electrode 382 Fourth electrode 383 First heat release mat P Mounting plate or circuit part 40 fifth electrode 42 sixth electrode 44 supporting part 46 optical layer 461 opening 48 second heat radiation mat 482 first part 481 second part 600 light emitting module 501 lower mounting body 502 mounting body 503 upper mounting body 504 , 506, 508, 510 lens 512, 514 power supply Force end 515 hole 519 reflective layer 521 adhesive 540 emitting unit 600 emitting module 700 mounting beam generator 800 bulbs 921 cover 923 mounting body 922 lens 924 lighting module 925 frame 926 radiators 927 insertion portion 928 ferrule

Claims (10)

A photoelectric component,
A substrate having a first side and a second side,
A first photoelectric component unit located on the first side of the substrate;
A second photoelectric component unit located on the first side of the substrate;
A third photoelectric component unit located on the first side of the substrate and between the first photoelectric component unit and the second photoelectric component unit;
The first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit are respectively formed between the first semiconductor layer, the second semiconductor layer, and the first semiconductor layer and the second semiconductor layer. Active layer, and
The photoelectric component is further
Formed on the first semiconductor layer of the first optoelectronic component unit, on the first semiconductor layer of the second optoelectronic component unit, and on the first semiconductor layer of the third optoelectronic component unit; And a plurality of first electrodes electrically connected to the first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit,
Formed on the second semiconductor layer of the first optoelectronic component unit, on the second semiconductor layer of the second optoelectronic component unit, and on the second semiconductor layer of the third optoelectronic component unit; And a plurality of second electrodes electrically connected to the first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit, and
A heat radiation mat formed on the second semiconductor layer of the third photoelectric component unit and on the second electrode of the third photoelectric component unit;
A plurality of conductive wiring structures respectively formed between two adjacent ones of the first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit, which are respectively formed on the first semiconductor layer To the adjacent two of the first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit by providing one end located on the second semiconductor layer and the other end located on the second semiconductor layer A plurality of electrically conductive wiring structures to be electrically connected;
A fifth electrode located on the first electrode of the first photoelectric component unit and on the heat dissipation mat of the third photoelectric component unit;
And a sixth electrode located on the first electrode and the second electrode of the second photoelectric component unit,
The fifth electrode is electrically connected to the first photoelectric component unit by the first electrode located in the first photoelectric component unit,
The photoelectric component, wherein the sixth electrode is electrically connected to the second photoelectric component unit by the second electrode located in the second photoelectric component unit. It further includes one or more fourth photoelectric component units located between the second photoelectric component unit and the third photoelectric component unit,
The plurality of conductive wiring structures are completely separated from one another,
The plurality of conductive wiring structures include two adjacent ones of the first photoelectric component unit, the second photoelectric component unit, the third photoelectric component unit, and the one or more fourth photoelectric component units. The first photoelectric component unit, the second photoelectric component unit, the third photoelectric component unit, and the one or more fourth photoelectric component units are electrically connected by being respectively formed between the Item 1. The photoelectric component according to item 1.   The optoelectronic component of claim 1, wherein the heat dissipating mat is electrically connected to the fifth electrode. The second semiconductor layer has a first surface area,
The heat dissipating mat formed on the second semiconductor layer of the third photoelectric component unit has a second surface area,
The optoelectronic component according to claim 1, wherein the ratio of the second surface area to the first surface area is 80 to 100%. The photoelectric component is further
The first electrode and the fifth electrode of the first photoelectric component unit are formed on the first electrode of the first photoelectric component unit and located between the first electrode and the fifth electrode. A third electrode electrically connected to the electrode;
The second electrode and the sixth electrode of the second photoelectric component unit are formed on the second electrode of the second photoelectric component unit and located between the second electrode and the sixth electrode. And a fourth electrode electrically connected to the electrode;
The optoelectronic component according to claim 1, wherein the third electrode, the fourth electrode, and the heat dissipation mat have the same metal laminated structure. It further includes a first insulating layer and a second insulating layer located on a surface of a part of the first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit,
One of the plurality of conductive wiring structures is located between the first insulating layer and the second insulating layer;
The optoelectronic component according to claim 1, wherein the thickness of the second insulating layer is greater than the thickness of the first insulating layer. The photoelectric component is further
Including supporting parts comprising transparent material,
The support component is formed on the second side of the substrate and covers the sidewall of the substrate,
The optoelectronic component of claim 1, wherein the substrate comprises a wavelength converting material.   The photoelectric component according to claim 7, wherein the projected area of the fifth electrode and the sixth electrode perpendicular to the surface of the substrate is larger than the area of the surface of the substrate in the plan view of the photoelectric component.   The photoelectric component according to claim 7, wherein in the plan view of the photoelectric component, one side of the fifth electrode or the sixth electrode is positioned closer to the outermost side of the photoelectric component than the side wall of the substrate. Located between the first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit, and around the first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit And further comprising an optical layer comprising TiO ₂ ,
In a side view of the optoelectronic component, the optical layer has a second edge contacting the support component,
And, in a plan view of the photoelectric component, the outer circumference of a larger length, the photoelectric component according to claim 7 of the second side outer length of circumference edge of the substrate of the edge of the optical layer.

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