Non-volatile memory

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Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data.

Contents

Non-volatile memory typically refers to storage in memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).

Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. [1]

Overview

Non-volatile memory is typically used for the task of secondary storage or long-term persistent storage. The most widely used form of primary storage today[ as of? ] is a volatile form of random access memory (RAM), meaning that when the computer is shut down, anything contained in RAM is lost. However, most forms of non-volatile memory have limitations that make them unsuitable for use as primary storage. Typically, non-volatile memory costs more, provides lower performance, or has a limited lifetime compared to volatile random access memory.

Non-volatile data storage can be categorized into electrically addressed systems, for example, flash memory, and read-only memory) and mechanically addressed systems (hard disks, optical discs, magnetic tape, holographic memory, and such). [2] [3] Generally speaking, electrically addressed systems are expensive, and have limited capacity, but are fast, whereas mechanically addressed systems cost less per bit, but are slower.

Electrically addressed

Electrically addressed semiconductor non-volatile memories can be categorized according to their write mechanism.

Read-only and read-mostly devices

Mask ROMs are factory programmable only and typically used for large-volume products which are not required to be updated after the memory device is manufactured.

Programmable read-only memory (PROM) can be altered once after the memory device is manufactured using a PROM programmer. Programming is often done before the device is installed in its target system, typically an embedded system. The programming is permanent, and further changes require the replacement of the device. Data is stored by physically altering (burning) storage sites in the device.

An EPROM is an erasable ROM that can be changed more than once. However, writing new data to an EPROM requires a special programmer circuit. EPROMs have a quartz window that allows them to be erased with ultraviolet light, but the whole device is cleared at one time. A one-time programmable (OTP) device may be implemented using an EPROM chip without the quartz window; this is less costly to manufacture. An electrically erasable programmable read-only memory EEPROM uses voltage to erase memory. These erasable memory devices require a significant amount of time to erase data and write new data; they are not usually configured to be programmed by the processor of the target system. Data is stored using floating-gate transistors, which require special operating voltages to trap or release electric charge on an insulated control gate to store information.

Flash memory

Flash memory is a solid-state chip that maintains stored data without any external power source. It is a close relative to the EEPROM; it differs in that erase operations must be done on a block basis, and its capacity is substantially larger than that of an EEPROM. Flash memory devices use two different technologies—NOR and NAND—to map data. NOR flash provides high-speed random access, reading and writing data in specific memory locations; it can retrieve as little as a single byte. NAND flash reads and writes sequentially at high speed, handling data in blocks. However, it is slower on reading when compared to NOR. NAND flash reads faster than it writes, quickly transferring whole pages of data. Less expensive than NOR flash at high densities, NAND technology offers higher capacity for the same-size silicon. [4]

Ferroelectric RAM (F-RAM)

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O3], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Due to the PZT crystal maintaining polarity, F-RAM retains its data memory when power is shut off or interrupted.

Due to this crystal structure and how it is influenced, F-RAM offers distinct properties from other nonvolatile memory options, including extremely high, although not infinite, endurance (exceeding 1016 read/write cycles for 3.3 V devices), ultra-low power consumption (since F-RAM does not require a charge pump like other non-volatile memories), single-cycle write speeds, and gamma radiation tolerance. [5]

Magnetoresistive RAM (MRAM)

Magnetoresistive RAM stores data in magnetic storage elements called magnetic tunnel junctions (MTJs). The first generation of MRAM, such as Everspin Technologies' 4 Mbit, utilized field-induced writing. The second generation is developed mainly through two approaches: Thermal-assisted switching (TAS) [6] which is being developed by Crocus Technology, and Spin-transfer torque (STT) which Crocus, Hynix, IBM, and several other companies are developing. [7]

Phase-change Memory (PCM)

Phase-change memory stores data in chalcogenide glass, which can reversibly change the phase between the amorphous and the crystalline state, accomplished by heating and cooling the glass. The crystalline state has low resistance, and the amorphous phase has high resistance, which allows currents to be switched ON and OFF to represent digital 1 and 0 states. [8] [9]

FeFET memory

FeFET memory uses a transistor with ferroelectric material to permanently retain state.

RRAM memory

RRAM (ReRAM) works by changing the resistance across a dielectric solid-state material often referred to as a memristor. ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxygen ions and vacancies in the oxide would be analogous to the motion of electrons and holes in a semiconductor.

Although ReRAM was initially seen as a replacement technology for flash memory, the cost and performance benefits of ReRAM have not been enough for companies to proceed with the replacement. Apparently, a broad range of materials can be used for ReRAM. However, the discovery [10] that the popular high-κ gate dielectric HfO2 can be used as a low-voltage ReRAM has encouraged researchers to investigate more possibilities.

Mechanically addressed systems

Mechanically addressed systems use a recording head to read and write on a designated storage medium. Since the access time depends on the physical location of the data on the device, mechanically addressed systems may be sequential access. For example, magnetic tape stores data as a sequence of bits on a long tape; transporting the tape past the recording head is required to access any part of the storage. Tape media can be removed from the drive and stored, giving indefinite capacity at the cost of the time required to retrieve a dismounted tape. [11] [12]

Hard disk drives use a rotating magnetic disk to store data; access time is longer than for semiconductor memory, but the cost per stored data bit is very low, and they provide random access to any location on the disk. Formerly, removable disk packs were common, allowing storage capacity to be expanded. Optical discs store data by altering a pigment layer on a plastic disk and are similarly random access. Read-only and read-write versions are available; removable media again allows indefinite expansion, and some automated systems (e.g. optical jukebox) were used to retrieve and mount disks under direct program control. [13] [14] [15]

Domain-wall memory (DWM) stores data in a magnetic tunnel junctions (MTJs), which works by controlling domain wall (DW) motion in ferromagnetic nanowires. [16]

Organic

Thinfilm produces rewriteable non-volatile organic ferroelectric memory based on ferroelectric polymers. Thinfilm successfully demonstrated roll-to-roll printed memories in 2009. [17] [18] [19] In Thinfilm's organic memory the ferroelectric polymer is sandwiched between two sets of electrodes in a passive matrix. Each crossing of metal lines is a ferroelectric capacitor and defines a memory cell.

Non-volatile main memory

Non-volatile main memory (NVMM) is primary storage with non-volatile attributes. [20] This application of non-volatile memory presents security challenges. [21] NVDIMM is one example of the non-volatile main memory.

Related Research Articles

<span class="mw-page-title-main">Computer data storage</span> Storage of digital data readable by computers

Computer data storage or digital data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers.

<span class="mw-page-title-main">Computer memory</span> Computer component that stores information for immediate use

Computer memory stores information, such as data and programs, for immediate use in the computer. The term memory is often synonymous with the terms RAM,main memory, or primary storage. Archaic synonyms for main memory include core and store.

<span class="mw-page-title-main">Flash memory</span> Electronic non-volatile computer storage device

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

<span class="mw-page-title-main">EEPROM</span> Computer memory used for small quantities of data

EEPROM or E2PROM (electrically erasable programmable read-only memory) is a type of non-volatile memory. It is used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.

A RAM drive is a block of random-access memory that a computer's software is treating as if the memory were a disk drive. RAM drives provide high-performance temporary storage for demanding tasks and protect non-volatile storage devices from wearing down, since RAM is not prone to wear from writing, unlike non-volatile flash memory. They are in a sense the reverse of virtual memory: RAM drive uses a volatile fast memory as if it's a nonvolatile slow memory. Virtual memory is the opposite.

Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data indefinitely without electric power.

Wear leveling is a technique for prolonging the service life of some kinds of erasable computer storage media, such as flash memory, which is used in solid-state drives (SSDs) and USB flash drives, and phase-change memory. There are several wear leveling mechanisms that provide varying levels of longevity enhancement in such memory systems.

<span class="mw-page-title-main">USB flash drive</span> Data storage device

A flash drive is a data storage device that includes flash memory with an integrated USB interface. A typical USB drive is removable, rewritable, and smaller than an optical disc, and usually weighs less than 30 g (1 oz). Since first offered for sale in late 2000, the storage capacities of USB drives range from 8 megabytes to 256 gigabytes (GB), 512 GB and 1 terabyte (TB). As of 2023, 2 TB flash drives were the largest currently in production. Some allow up to 100,000 write/erase cycles, depending on the exact type of memory chip used, and are thought to physically last between 10 and 100 years under normal circumstances.

In computing, mass storage refers to the storage of large amounts of data in a persisting and machine-readable fashion. In general, the term "mass" in "mass storage" is used to mean "large" in relation to contemporaneous hard disk drives, but it has also been used to mean "large" relative to the size of primary memory as for example with floppy disks on personal computers.

<span class="mw-page-title-main">Magnetic storage</span> Recording of data on a magnetizable medium

Magnetic storage or magnetic recording is the storage of data on a magnetized medium. Magnetic storage uses different patterns of magnetisation in a magnetizable material to store data and is a form of non-volatile memory. The information is accessed using one or more read/write heads.

Reading is an action performed by computers, to acquire data from a source and place it into their volatile memory for processing. Computers may read information from a variety of sources, such as magnetic storage, the Internet, or audio and video input ports. Reading is one of the core functions of a Turing machine.

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.

Digital permanence addresses the history and development of digital storage techniques, specifically quantifying the expected lifetime of data stored on various digital media and the factors which influence the permanence of digital data. It is often a mix of ensuring the data itself can be retained on a particular form of media and that the technology remains viable. Where possible, as well as describing expected lifetimes, factors affecting data retention will be detailed, including potential technology issues.

An in-memory database is a database management system that primarily relies on main memory for computer data storage. It is contrasted with database management systems that employ a disk storage mechanism. In-memory databases are faster than disk-optimized databases because disk access is slower than memory access and the internal optimization algorithms are simpler and execute fewer CPU instructions. Accessing data in memory eliminates seek time when querying the data, which provides faster and more predictable performance than disk.

Write once read many (WORM) describes a data storage device in which information, once written, cannot be modified. This write protection affords the assurance that the data cannot be tampered with once it is written to the device, excluding the possibility of data loss from human error, computer bugs, or malware.

<span class="mw-page-title-main">Ferroelectric RAM</span> Novel type of computer memory

Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory.

<span class="mw-page-title-main">Read-only memory</span> Electronic memory that cannot be changed

Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications, such as video games, for programmable devices can be distributed as plug-in cartridges containing ROM.

This glossary of computer hardware terms is a list of definitions of terms and concepts related to computer hardware, i.e. the physical and structural components of computers, architectural issues, and peripheral devices.

Solid-state storage (SSS) is non-volatile computer storage that has no moving parts; it uses only electronic circuits. This solid-state design dramatically differs from the commonly-used competing technology of electromechanical magnetic storage which uses moving media coated with magnetic material. Generally, SSS is much faster but more expensive for the same amount of storage.

<span class="mw-page-title-main">Memory cell (computing)</span> Part of computer memory

The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.

References

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  16. ↑ Parkin, Stuart S. P.; Hayashi, Masamitsu; Thomas, Luc (11 April 2008). "Magnetic Domain-Wall Racetrack Memory". Science. 320 (5873): 190–194. Bibcode:2008Sci...320..190P. doi:10.1126/science.1145799. PMID   18403702. S2CID   19285283.
  17. ↑ Thinfilm and InkTec awarded IDTechEx' Technical Development Manufacturing Award IDTechEx, 15 April 2009
  18. ↑ PolyIC, ThinFilm announce pilot of volume printed plastic memories Archived 29 September 2012 at the Wayback Machine EETimes, 22 September 2009
  19. ↑ All set for high-volume production of printed memories Archived 13 April 2010 at the Wayback Machine Printed Electronics World, 12 April 2010
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