KR970016714A - Manufacturing method of liquid crystal display device - Google Patents

Manufacturing method of liquid crystal display device Download PDF

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Publication number
KR970016714A
KR970016714A KR1019950032110A KR19950032110A KR970016714A KR 970016714 A KR970016714 A KR 970016714A KR 1019950032110 A KR1019950032110 A KR 1019950032110A KR 19950032110 A KR19950032110 A KR 19950032110A KR 970016714 A KR970016714 A KR 970016714A
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KR
South Korea
Prior art keywords
insulating film
forming
interlayer insulating
substrate
contact hole
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KR1019950032110A
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Korean (ko)
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KR0172880B1 (en
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김홍규
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구자홍
Lg 전자 주식회사
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Priority to KR1019950032110A priority Critical patent/KR0172880B1/en
Publication of KR970016714A publication Critical patent/KR970016714A/en
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Publication of KR0172880B1 publication Critical patent/KR0172880B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 다결정실리콘 박막 트랜지스터를 채용한 액정표시장치의 제조 방법에 관한 것이다.The present invention relates to a method for manufacturing a liquid crystal display device employing a polysilicon thin film transistor.

본 발명은 절연성 투명기판 위에 활성층을 형성하는 단계와, 상기 활성층 전면에 절연막을 형성하는 단계, 상기 게이트 절연막 상부 소정 영역에 게이트 전극을 형성하는 단계, 상기 활성층에 불순물을 이온 주입하여 소오스와 드레인 및 스토리지 커패시터의 하부 전극을 형성하는 단계, 기판 전면에 제 1층간 절연막을 형성하는 단계, 상기 제 1층간 절연막 및 절연막을 선택적으로 식각하여 상기 소오스를 노출시키는 콘택홀을 형성하는 단계, 스토리지 커패시터가 형성될 부분의 상기 제 1층간 절연막을 선택적으로 식각하는 단계, 상기 제 1층간 절연막 상에 도전층을 형성하는 단계, 상기 도전층을 패터닝하여 상기 콘택홀을 통해 소오스에 접속되는 전극을 형성함과 동시에 사기 스토리지 커패시터 하부 전극상의 상기 절연막 위에 스토리지 커패시터 상부 전극을 형성하는 단계, 기판 전면에 제 2층간 절연막 위에 스토리지 커패시터 상부 전극을 형성하는 단계, 기판 전면에 제 2층간 절연막을 형성하는 단계, 상기 제 2층간 절연막 및 절연막을 선택적으로 식각하여 상기 드레인을 노출시키는 콘택홀을 형성하는 단계, 상기 제 2층 절연막 상에 상기 콘택홀을 통해 드레인과 접속되는 화소 전극을 형성하는 단계 및 기판 전면에 보호막을 형성하는 단계로 이루어지는 액정표시장치의 제조 방법을 제공한다.The present invention provides a method of forming an active layer on an insulating transparent substrate, forming an insulating film on the entire surface of the active layer, forming a gate electrode on a predetermined region of the gate insulating film, and implanting impurities into the active layer to source and drain the active layer. Forming a lower electrode of the storage capacitor, forming a first interlayer insulating film on the entire surface of the substrate, selectively etching the first interlayer insulating film and the insulating film to form a contact hole exposing the source, and forming a storage capacitor Selectively etching the first interlayer insulating film of a portion to be formed, forming a conductive layer on the first interlayer insulating film, patterning the conductive layer to form an electrode connected to the source through the contact hole, and Storage capacitance on the insulating film on the lower storage capacitor lower electrode Forming an upper electrode, forming a storage capacitor upper electrode over the second interlayer insulating film on the front surface of the substrate, forming a second interlayer insulating film on the front surface of the substrate, selectively etching the second interlayer insulating film and the insulating film to drain the drain Forming a contact hole exposing the light emitting layer, forming a pixel electrode connected to the drain through the contact hole on the second layer insulating film, and forming a protective film on the entire surface of the substrate. to provide.

Description

액정표시장치의 제조 방법Manufacturing Method of Liquid Crystal Display

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 3도는 본 발명에 의한 TFT-LCD의 화소 구성도 및 이의 등가회로도를 나타낸 도면,3 is a diagram illustrating a pixel configuration of an TFT-LCD and an equivalent circuit thereof according to the present invention;

제 4도는 본 발명에 의한 TFT-LCD 제조 방법을 도시한 공정 순서도,4 is a process flowchart showing a TFT-LCD manufacturing method according to the present invention;

제 5도는 본 발명에 의한 게이트 절연막 형성 방법을 도시한 도면.5 is a view showing a gate insulating film forming method according to the present invention.

Claims (4)

절연성 투명기판 위에 활성층을 형성하는 단계와, 상기 활성층 전면에 절연막을 형성하는 단계, 상기 게이트 절연막 상부 소정 영역에 게이트 전극을 형성하는 단계, 상기 활성층에 불순물을 이온 주입하여 소오스와 드레인 및 스토리지 커패시터의 하부 전극을 형성하는 단계, 기판 전면에 제 1층간 절연막을 형성하는 단계, 상기 제 1층간 절연막 및 절연막을 선택적으로 식각하여 상기 소오스를 노출시키는 콘택홀을 형성하는 단계, 스토리지 커패시터가 형성될 부분의 상기 제 1층간 절연막을 선택적으로 식각하는 단계, 상기 제 1층간 절연막 상에 도전층을 형성하는 단계, 상기 도전층을 패터닝하여 상기 콘택홀을 통해 소오스에 접속되는 전극을 형성함과 동시에 상기 스토리지 커패시터 하부 전극상의 상기 절연막 위에 스토리지 커패시터 상부 전극을 형성하는 단계, 기판 전면에 제 2층간 절연막을 형성하는 단계, 상기 제 2층간 절연막 및 절연막을 선택적으로 식각하여 상기 드레인을 노출시키는 콘택홀을 형성하는 단계, 상기 제 2층간 절연막 상에 상기 콘택홀을 통해 드레인과 접속되는 화소전극을 형성하는 단계, 및 기판 전면에 보호막을 형성하는 단계로 이루어지는 것을 특징으로 하는 액정표시장치의 제조 방법.Forming an active layer on the insulating transparent substrate, forming an insulating film on the entire surface of the active layer, forming a gate electrode on a predetermined region over the gate insulating film, and ion implanting impurities into the active layer to obtain a source, a drain, and a storage capacitor. Forming a lower electrode, forming a first interlayer insulating film on the entire surface of the substrate, selectively etching the first interlayer insulating film and the insulating film to form a contact hole exposing the source, and forming a contact capacitor. Selectively etching the first interlayer insulating film, forming a conductive layer on the first interlayer insulating film, patterning the conductive layer to form an electrode connected to the source through the contact hole, and simultaneously forming the storage capacitor The upper portion of the storage capacitor above the insulating film on the lower electrode Forming a second interlayer insulating film on the entire surface of the substrate, selectively etching the second interlayer insulating film and the insulating film to form a contact hole exposing the drain, and forming the contact hole on the second interlayer insulating film A method of manufacturing a liquid crystal display device, comprising forming a pixel electrode connected to a drain through a hole, and forming a protective film on the entire surface of the substrate. 제 1항에 있어서, 상기 절연막을 박막 트랜지스터부에서 게이트 절연막으로 사용되고, 스토리지 커패시터부에서 커패시터 절연막으로 사용하는 것을 특징으로 하는 액정표시장치의 제조 방법.The method of claim 1, wherein the insulating film is used as the gate insulating film in the thin film transistor section and the capacitor insulating film in the storage capacitor section. 제 1항에 있어서, 상기 절연막은 ONO로 형성하고, 상기 제 1층간 절연막은 실리콘 산화막으로 형성하는 것을 특징으로 하는 액정표시장치의 제조 방법.The method of claim 1, wherein the insulating film is formed of ONO and the first interlayer insulating film is formed of a silicon oxide film. 제 1항에 있어서, 상기 절연막은 실리콘 산화막으로 형성하고, 상기 제 1층간 절연막을 ONO로 형성하는 것을 특징으로 하는 액정표시장치의 제조 방법.The method of claim 1, wherein the insulating film is formed of a silicon oxide film, and the first interlayer insulating film is formed of ONO. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950032110A 1995-09-27 1995-09-27 Method of manufacturing liquid crystal display device KR0172880B1 (en)

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KR1019950032110A KR0172880B1 (en) 1995-09-27 1995-09-27 Method of manufacturing liquid crystal display device

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Application Number Priority Date Filing Date Title
KR1019950032110A KR0172880B1 (en) 1995-09-27 1995-09-27 Method of manufacturing liquid crystal display device

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KR970016714A true KR970016714A (en) 1997-04-28
KR0172880B1 KR0172880B1 (en) 1999-03-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100807554B1 (en) * 2006-08-28 2008-02-28 삼성에스디아이 주식회사 Flat panel display and fabrication method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100807554B1 (en) * 2006-08-28 2008-02-28 삼성에스디아이 주식회사 Flat panel display and fabrication method thereof

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