research-article

A Single Bitline Highly Stable, Low Power With High Speed Half-Select Disturb Free 11T SRAM Cell

Authors:

Neeta PandeyAuthors Info & Claims

ACM Transactions on Design Automation of Electronic Systems, Volume 29, Issue 4

Article No.: 67, Pages 1 - 13

https://doi.org/10.1145/3653675

Published: 09 July 2024 Publication History

Abstract

A half-select disturb-free 11T (HF11T) static random access memory (SRAM) cell with low power, better stability and high speed is presented in this paper. The proposed SRAM cell works well with bit-interleaving design, which enhances soft-error immunity. A comparison of the proposed HF11T cell with other cutting-edge designs such as single-ended HS free 11T (SEHF11T), a shared-pass-gate 11T (SPG11T), data-dependent stack PMOS switching 10T (DSPS10T), a single-ended half-selected robust 12T (HSR12T), and 11T SRAM cells has been made. It exhibits 4.85×/9.19× less read delay (T_RA) and write delay (T_WA), respectively as compared to other considered SRAM cells. It achieves 1.07×/1.02× better read and write stability, respectively than the considered SRAM cells. It shows maximum reduction of 1.68×/4.58×/94.72×/9×/145× leakage power, read power, write power consumption, read power delay product (PDP) and write PDP respectively, than the considered SRAM cells. In addition, the proposed HF11T cell achieves 10.14× higher I_on/I_off ratio than the other compared cells. These improvements come with a trade-off, resulting in 1.13× more T_RA compared to SPG11T. The simulation is performed with Cadence Virtuoso 45nm CMOS technology at supply voltage (V_DD) of 0.6 V.

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Cited By

Soni LPandey N(2025)A robust, low power and high speed radiation hardened 12T SRAM cell for space applicationsMicroelectronics Journal10.1016/j.mejo.2024.106502156(106502)Online publication date: Feb-2025
https://doi.org/10.1016/j.mejo.2024.106502
Sharma ASharma KTomar VSachdeva A(2024)A FinFET Based Low-Power Write Enhanced SRAM Cell With Improved StabilityAEU - International Journal of Electronics and Communications10.1016/j.aeue.2024.155556187(155556)Online publication date: Dec-2024
https://doi.org/10.1016/j.aeue.2024.155556
Rana GSachdeva AElangovan MSharma K(2024) A FinFET ‐Based Low‐Power Static Random Access Memory Cell With Improved Stability International Journal of Numerical Modelling: Electronic Networks, Devices and Fields10.1002/jnm.7000237:6Online publication date: 28-Nov-2024
https://doi.org/10.1002/jnm.70002

Index Terms

A Single Bitline Highly Stable, Low Power With High Speed Half-Select Disturb Free 11T SRAM Cell
1. Hardware
  1. Integrated circuits
    1. Semiconductor memory
      1. Static memory

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cover image ACM Transactions on Design Automation of Electronic Systems

ACM Transactions on Design Automation of Electronic Systems Volume 29, Issue 4

July 2024

360 pages

EISSN:1557-7309

DOI:10.1145/3613660

Editor:
Jiang Hu
Texas A&M University, USA

Issue’s Table of Contents

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than the author(s) must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected].

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Association for Computing Machinery

New York, NY, United States

Journal Family

ACM Journals for the Design of Smart and Connected Systems

Publication History

Published: 09 July 2024

Online AM: 19 June 2024

Accepted: 12 March 2024

Revised: 11 February 2024

Received: 10 September 2023

Published in TODAES Volume 29, Issue 4

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Cited By

Soni LPandey N(2025)A robust, low power and high speed radiation hardened 12T SRAM cell for space applicationsMicroelectronics Journal10.1016/j.mejo.2024.106502156(106502)Online publication date: Feb-2025
https://doi.org/10.1016/j.mejo.2024.106502
Sharma ASharma KTomar VSachdeva A(2024)A FinFET Based Low-Power Write Enhanced SRAM Cell With Improved StabilityAEU - International Journal of Electronics and Communications10.1016/j.aeue.2024.155556187(155556)Online publication date: Dec-2024
https://doi.org/10.1016/j.aeue.2024.155556
Rana GSachdeva AElangovan MSharma K(2024) A FinFET ‐Based Low‐Power Static Random Access Memory Cell With Improved Stability International Journal of Numerical Modelling: Electronic Networks, Devices and Fields10.1002/jnm.7000237:6Online publication date: 28-Nov-2024
https://doi.org/10.1002/jnm.70002

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