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Metal reliability mechanisms in Ruthenium interconnects

Published: 28 April 2020 Publication History

Abstract

We perform a detailed assessment of different reliability mechanisms in Ru interconnects. We show that full Ru vias have no risk of voiding after long thermal storage (>1200 h) at high temperature. Our estimate of the electromigration activation energy is ~1.8 eV and, through FA, we associate it to grain boundary diffusion. Conservative lifetime predictions confirm a high JMAX but high self-heating (>100 °C) @JMAX. We venture that Ru JMAX will be limited by the maximum heating allowed at each interconnect level without degrading the chip performance.

References

[1]
H. Zahedmanesh, “Copper Electromigration; Prediction of Scaling Limits”, IEEE IITC/MAM 2019
[2]
C. Auth et al., “A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects”, IEEE IEDM 2017
[3]
F. Griggio et al, “Reliability of Dual-Damascene Local Interconnects Featuring Cobalt on 10 nm Logic Technology”, IEEE IRPS 2018, 6E.3
[4]
C. Adelmann et al., “Alternative Metals for Advanced Interconnects ”,in Proc. of IEEE IITC/AMC, May, 2014
[5]
I. Ciofi, et al., “Modeling of via resistance for advanced technology nodes”, IEEE Transactions on Electron Devices 64(5), p. 2306
[6]
C.-K. Hu, et al, “Future on-chip interconnect metallization and electromigration”, IEEE IRPS 2018, 4F.1
[7]
O. Varela Pedreira, et al., “Reliability Study on Cobalt and Ruthenium as Alternative Metals for Advanced Interconnects”, IEEE IRPS, 2017. 6B.2
[8]
A. Lesniewska et al., “Dielectric Reliability Study of 21 nm Pitch Interconnets with Barrierless Ru Fill”, IEEE IRPS, 2020
[9]
K. Croes, et al., “Interconnect metals beyond copper: reliability challenges and opportunities”, IEEE IEDM, 2018, 5.3.1-4
[10]
S. Beyne, et al., “The first Observation of p-type Electromigration Failure in full Ruthenium Interconnects”, IEEE IRPS 2018, 6D-7
[11]
V. Vega-Gonzalez, et al., “21 nm Pitch Dual-Damascene BEOL Process Integration with Full Barrierless Ru Metallization” IEEE IITC/MAM 2019
[12]
A. Gupta, et al., “High-aspectratio ruthenium lines for buried power rail”, IEEE IITC, 2018, pp. 4–6
[13]
K. Croes, et al., “Understanding EM-degradation mechanisms in metal heaters used for Si Photonics applications”, IEEE IRPS, 2019
[14]
S. Beyne, et al., “Electromigration activation energies in ruthenium interconnects” IEEE IITC/MAM, 2019
[15]
M. Lofrano et al., “Joule Heating study in scaled Cu, Co and Ru interconnects”, IEEE IITC/MAM, 2019

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            cover image Guide Proceedings
            2020 IEEE International Reliability Physics Symposium (IRPS)
            Apr 2020
            974 pages

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            Published: 28 April 2020

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