Design and function of GaN MESFET terahertz signal generator by finite difference method
Pages 126 - 136
Abstract
The GaN based metal semiconductor field effect transistor (MESFET) devices have been designed by employing finite difference method in order to fit quite well for generation of terahertz signals. The equipotential and equi-electric field contours are broadly developed with variation of drain and gate voltages. The motion of Gunn domain with variation of voltage is constantly observed from source to drain in the channel area of MESFET. In fact, the domain is more clearly visible in the equi-electric field contours than that in the equipotential contours. The distribution of electron concentration (n) in the MESFET is also determined in the steady state mode by fitting right successive relaxation factor and electron relaxation time. The I-V curves of drain are tested by employing Gummel process in finite difference method. The MESFET device is designed in such way to obtain 26.5GHz output signal in the millimeter region by tailoring its physical parameters such as geometry of device, carrier concentration, mobilities etc.
References
[1]
J.F. Federici, B. Schulkin, F. Huang, D. Gary, R. Barat, F. Oliveira, D. Zimdars, Semicond. Sci. Technol., 20 (2005) S266.
[2]
K. Seo, S. Dhar, P. Bhattacharya, C. Ghosh, R. Sadler, H. Lee, IEEE Trans. Electron. Devices, 8 (1985) 154.
[3]
L. Jiang, C. Li, L. Huang, Z. Zhang, C. Zhang, Y. Liu, Adv. J. Food Sci. Technol., 4 (2012) 426.
[4]
Subba R. Kodigala, D. Huang, M.A. Reshchikov, F. Yun, H. Morkoc, J. Jasinski, Z., L. Weber, C. Sone, S.S. Park, K.Y. Lee, J. Mater. Sci. Mater. Electron., 14 (2003) 233.
[5]
S. Krishnamurthy, M.V. Schilgaarde, A. Sher, A. B. Chen, Appl. Phys. Lett., 71 (1997) 1999.
[6]
J.T. Lu, J.C. Cao, Semicond. Sci. Technol., 19 (2004) 451.
[7]
E. Alekseev, A. Eisenbach, D. Pavlidis, S.M. Hubbard, W. Sutton, Priv. Commun. (1999).
[8]
M. Alexandru, V. Banu, P. Godignon, M. Vellvehi, J. Millan, IEEE Conf. (2013).
[9]
E. Alekseev, D. Pavlidis, Solid-State Electron., 44 (2000) 941.
[10]
D.G. Zhao, H. Yang, J.J. Zhu, D.S. Jiang, Z.S. Liu, S.M. Zhang, Y.T. Wang, J.W. Liang, Appl. Phys. Lett., 89 (2006) 112106.
[11]
E.C.H. Kyle, S.W. Kaun, P.G. Burke, F. Wu, Y.-R. Wu, J.S. Speck, J. Appl. Phys., 115 (2014) 193702.
[12]
J.R. Nagel, Priv. Commun. (2012).
[13]
M.A. Asunaidi, S.M. Hammadi, S.M. El-Ghazaly, Int. J. Numer. Model.: Electron. Netw. Devices Fields, 10 (1997) 107.
[14]
K. Yamaguchi, S. Asai, H. Kodera, IEEE Trans. Electron. Devices, 23 (1976) 1283.
[15]
Christopher M. Snowden, Introduction to Semiconductor Device Modelling, World Scientific Publishing, Singapore, 1986.
[16]
G. Goto, T. Nakamura, T. Isobe, IEEE Trans. Electron. Devices, 22 (1975) 122.
[17]
H.W. Tim, J. Appl. Phys., 39 (1968) 3897.
[18]
Advanced Theory of Semiconductors and Semiconductor Devices Numerical Methods and Simulation, Umberto Ravaioli, Private communication, 2016.
[19]
Ariel J. Ben-Sasson, Vertical Organic Field Effect Transistor realized by Block-Copolymers Self-Assembly (Ph.D. thesis), Israel Institute of Technology, 2013.
[20]
Analysis and Simulation of Semiconductor Devices, Siegfried Selberherr, Springer-Verlag, New York, 1984.
[21]
D.L. Scharfetter, H.K. Gummel, IEEE Trans. Electron. Devices, 16 (1969) 64.
[22]
Ting-Wei Tang, IEEE Trans. Electron. Devices, 32 (1984) 1912.
[23]
Physics of Semiconductor Devices, S.M. Sze, Wiley-Interscience Publication, New York, 1981.
[24]
Subba Ramaiah Kodigala, Somnath Chattopadhyay, Charles Overton, Ira Ardoin, B.J. Gordon, D. Johnstone, D. Roy, D. Barone, Appl. Surface Sci., 330 (2015) 465.
[25]
Subba Ramaiah Kodigala, Physica B, 500 (2016) 35.
[26]
Subba Ramaiah Kodigala, S. Chattopadhyay, C. Overton, I. Ardoin, Solid-State Electronics, 114 (2015) 104.
[27]
Subba Ramaiah Kodigala, Journal of Alloys and Compounds, 674 (2016) 435.
- Design and function of GaN MESFET terahertz signal generator by finite difference method
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Published: 01 April 2017
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