Rasche et al., 2022 - Google Patents

Determination of Cleavage Energy and Efficient Nanostructuring of Layered Materials by Atomic Force Microscopy

Rasche et al., 2022

View PDF
Document ID
680851618748787564
Author
Rasche B
Brunner J
Schramm T
Ghimire M
Nitzsche U
Buchner B
Giraud R
Richter M
Dufouleur J
Publication year
Publication venue
Nano Letters

External Links

Snippet

A method is presented to use atomic force microscopy to measure the cleavage energy of van der Waals materials and similar quasi-two-dimensional materials. The cleavage energy of graphite is measured to be 0.36 J/m2, in good agreement with literature data. The same …
Continue reading at hal.science (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/022—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/0293—Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls

Similar Documents

Publication Publication Date Title
Kou et al. Two-dimensional topological insulators: Progress and prospects
Liu et al. Unique domain structure of two-dimensional α-Mo2C superconducting crystals
Sotthewes et al. Universal Fermi-level pinning in transition-metal dichalcogenides
Haskins et al. Control of thermal and electronic transport in defect-engineered graphene nanoribbons
Li et al. Structural phase transition of multilayer VSe2
Guan et al. Strain-controllable high curie temperature, large valley polarization, and magnetic crystal anisotropy in a 2D ferromagnetic Janus VSeTe monolayer
Gandi et al. WS2 as an excellent high-temperature thermoelectric material
Dolui et al. Electric field effects on armchair MoS2 nanoribbons
Kim et al. Toward the growth of an aligned single-layer MoS2 film
Oviedo et al. In situ TEM characterization of shear-stress-induced interlayer sliding in the cross section view of molybdenum disulfide
Drost et al. Electronic states at the graphene–hexagonal boron nitride zigzag interface
Chen et al. Uniformly wetting deposition of Co atoms on MoS2 monolayer: a promising two-dimensional robust half-metallic ferromagnet
Yu et al. Phase-controlled growth of one-dimensional Mo6Te6 nanowires and two-dimensional MoTe2 ultrathin films heterostructures
Muchharla et al. Tunable electronics in large-area atomic layers of boron–nitrogen–carbon
Brzhezinskaya et al. Engineering of numerous moiré superlattices in twisted multilayer graphene for twistronics and straintronics applications
Davies et al. Lattice-matched epitaxial graphene grown on boron nitride
Wang et al. Vanishing Schottky barriers in blue phosphorene/MXene heterojunctions
Lee et al. Epitaxial van der Waals contacts between transition-metal dichalcogenide monolayer polymorphs
Rasche et al. Determination of Cleavage Energy and Efficient Nanostructuring of Layered Materials by Atomic Force Microscopy
Cao et al. Band gap opening of graphene by forming heterojunctions with the 2D carbonitrides nitrogenated holey graphene, g-C3N4, and g-CN: electric field effect
Pei et al. Interlayer coupling: an additional degree of freedom in two-dimensional materials
Feng et al. Magnetism by interfacial hybridization and p-type doping of MoS2 in Fe4N/MoS2 superlattices: a first-principles study
Huang et al. Stabilities, Electronic and Optical Properties of SnSe2 (1–x) S2 x Alloys: A First-Principles Study
Liu et al. Flat AgTe honeycomb monolayer on Ag (111)
Wang et al. Ambipolar Surface Conduction in Ternary Topological Insulator Bi2 (Te1–x Se x) 3 Nanoribbons