Thomas et al., 2008 - Google Patents

A power-efficient impoved-stability 6T SRAM cell in 45nm Multi-Channel FET technology

Thomas et al., 2008

Document ID
5555585879542573575
Author
Thomas O
Guillaumot B
Ernst T
Cousin B
Rozeau O
Publication year
Publication venue
ESSDERC 2008-38th European Solid-State Device Research Conference

External Links

Snippet

This paper presents an innovative 3D CMOS 6T SRAM cell design in multi-channel (MC) FET technology by well adapting the number of channels per device. A simulation model for the 45 nm MCFET has been developed based on silicon measurements. The electrical …
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