Roy et al., 1992 - Google Patents

Excimer laser ablation of ferroelectric Pb (Zr, Ti) O3 thin films with low pressure direct‐current glow discharge

Roy et al., 1992

Document ID
12953332502677054552
Author
Roy D
Krupanidhi S
Dougherty J
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

External Links

Snippet

Thin films of Pb (Zr, Ti) O3 (PZT) were deposited on platinum coated silicon and bare silicon by excimer laser (248 nm) ablation and were in situ crystallized, with and without oxygen discharge. Films deposited at various oxygen discharge voltages exhibited variations in …
Continue reading at pubs.aip.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Plasma treatment

Similar Documents

Publication Publication Date Title
Roy et al. Excimer laser ablated lead zirconate titanate thin films
Castellano et al. Ion‐beam deposition of thin films of ferroelectric lead zirconate titanate (PZT)
Kijima et al. New low-temperature processing of metalorganic chemical vapor deposition-Bi4Ti3O12 thin films using BiOx buffer layer
Liu et al. Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer
Matsuoka et al. Low‐temperature epitaxial growth of BaTiO3 films by radio‐frequency‐mode electron cyclotron resonance sputtering
Nawathey et al. Pulsed laser deposition of barium titanate films on silicon
Roy et al. Excimer laser ablation of ferroelectric Pb (Zr, Ti) O3 thin films with low pressure direct‐current glow discharge
Roy et al. Pulsed excimer laser deposition and characterization of ferroelectric Pb (Zr0. 52Ti0. 48) O3 thin films
Park et al. Effects of Heating Profiles on the Orientation and Dielectric Properties of 0.5 Pb (Mg1/3Nb2/3) O3‐0.5 PbTiO3 Thin Films by Chemical Solution Deposition
Cernea Methods for preparation of BaTiO3 thin films
Laha et al. Growth and characterization of excimer laser-ablated BaBi2Nb2O9 thin films
Peng et al. Oriented lead germanate thin films by excimer laser ablation
Jeong et al. Pt and RuO2 bottom electrode effects on Pb (Zr, Ti) O3 memory capacitors
Krupanidhi et al. Pulsed excimer laser deposition of ferroelectric thin films
Krupanidhi et al. Effect of low pressure dc plasma discharge on laser ablated ferroelectric Pb (Zr, Ti) O3 thin films
Nakaiso et al. Low-temperature preparation of Sr2 (Ta1-x, Nbx) 2O7 thin films by pulsed laser deposition and its electrical properties
Zheng et al. Excimer laser deposition of c-axis oriented Pb (Zr, Ti) O3 thin films on silicon substrates with direct-current glow discharge
Rastogi et al. Plasma-assisted pulsed laser deposition of SrBi2Ta2O9 thin films of improved ferroelectric and crystalline properties
Okuwada et al. Epitaxial growth at PZT/Ir interface
Maffei et al. Process‐property correlations of excimer laser ablated bismuth titanate films on silicon
Dat et al. Pulsed laser ablation-deposition of La0. 5Sr0. 5CoO3 for use as electrodes in nonvolatile ferroelectric memories
Yang et al. Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process
Masuda et al. Synthesis of BaTiO3 thin films substituted with hafnium and zirconium by a laser ablation method using the fourth-harmonic wave of a YAG laser
Kanno et al. Preparation of Pb-based ferroelectric thin films at room temperature using excimer-laser-assisted multi-ion-beam sputtering
Peng et al. Excimer laser ablated deposition of ferroelectric lead germanate thin films