Saha et al., 1999 - Google Patents

Study of the electrical properties of pulsed laser ablated (Ba0. 5Sr0. 5) TiO3 thin films

Saha et al., 1999

Document ID
11336798761471489242
Author
Saha S
Krupanidhi S
Publication year
Publication venue
Materials Science and Engineering: B

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The laser ablated barium strontium titanate (BST) thin films were characterized in terms of composition, structure, microstructure and electrical properties. Films deposited at 300° C under 50 mTorr oxygen pressure and 3 J cm− 2 laser fluence and further annealed at 600° …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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