US20050242437A1 - Method and apparatus for supporting microelectronic substrates - Google Patents
Method and apparatus for supporting microelectronic substrates Download PDFInfo
- Publication number
- US20050242437A1 US20050242437A1 US11/172,325 US17232505A US2005242437A1 US 20050242437 A1 US20050242437 A1 US 20050242437A1 US 17232505 A US17232505 A US 17232505A US 2005242437 A1 US2005242437 A1 US 2005242437A1
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- United States
- Prior art keywords
- bond site
- connection structure
- elongated members
- microelectronic substrate
- bond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title abstract description 11
- 230000009969 flowable effect Effects 0.000 claims abstract description 46
- 239000004020 conductor Substances 0.000 claims abstract description 44
- 229910000679 solder Inorganic materials 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 16
- 238000002161 passivation Methods 0.000 description 13
- 238000007747 plating Methods 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000004891 communication Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
- H05K1/116—Lands, clearance holes or other lay-out details concerning the surrounding of a via
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
- H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
- H05K1/113—Via provided in pad; Pad over filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09381—Shape of non-curved single flat metallic pad, land or exposed part thereof; Shape of electrode of leadless component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/094—Array of pads or lands differing from one another, e.g. in size, pitch or thickness; Using different connections on the pads
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09436—Pads or lands on permanent coating which covers the other conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09509—Blind vias, i.e. vias having one side closed
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09781—Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/0979—Redundant conductors or connections, i.e. more than one current path between two points
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/099—Coating over pads, e.g. solder resist partly over pads
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Definitions
- a microelectronic device package 10 can include a support member 20 having a front surface 21 and a rear surface 22 facing opposite the front surface 21 .
- the support member 20 can also have a slot 23 extending from the front surface 21 to the rear surface 22 .
- a microelectronic substrate 40 (visible through the slot 23 ) is attached to the rear surface 22 , and has wire bond pads 41 that are accessible through the slot 23 for coupling to the support member 20 .
- the support member 20 can include active trace patterns 30 , each of which has a wire bond pad 32 , a ball bond pad 31 , and a connecting trace 33 extending between the wire bond pad 32 and the ball bond pad 31 .
- Each active trace pattern 30 can also include an electroplating trace 34 coupled to an electroplating bus 24 to provide electrically conductive coatings on the active trace pattern 30 during the formation of the support member 20 .
- the wire bond pads 32 of the active trace patterns 30 are connected to corresponding wire bond pads 41 of the microelectronic substrate 40 with wire bonds 42 .
- a solder ball (not shown in FIG. 1 ) can then be disposed on each ball bond pad 31 .
- the wire bonds 42 and the wire bond pads 41 and 32 can then be covered with an encapsulating material for protection, while the solder balls remain exposed.
- the exposed solder balls can be connected to other devices to provide for communication between those devices and the packaged microelectronic substrate 40 .
- the support member 20 can include inactive trace patterns 50 .
- Each inactive trace pattern 50 can include a ball bond pad 51 that supports a solder ball, and an electroplating trace 54 for electroplating conductive coatings on the inactive trace pattern 50 .
- the inactive trace patterns 50 do not include a wire bond pad 32 or a corresponding connecting trace 33 . Accordingly, the inactive trace patterns 50 do not provide electrical communication to or from the microelectronic substrate 40 .
- the inactive trace patterns 50 can support solder balls which, together with the solder balls on the active trace patterns 30 , define a uniform pattern of solder balls that can be compatible with a variety of devices in which the package 10 is installed and/or tested.
- FIG. 2 illustrates a conventional test apparatus 60 for testing device packages such as the package 10 described above with reference to FIG. 1 .
- the test apparatus 60 can include a base 61 that supports the device package 10 .
- An overlying frame 62 secures the package 10 to the base 61 .
- solder balls 25 of the package 10 remain exposed through an opening 65 in the frame 62 .
- a test jig 63 is then aligned with the base 61 such that test contacts 64 of the jig 63 make physical and electrical contact with the solder balls 25 of the package 10 .
- the test jig 63 is then used to test the operational characteristics of the device package 10 .
- test jig 63 can partially or completely dislodge some of the solder balls 25 and/or the trace patterns to which the solder balls 25 are connected.
- the dislodged solder balls 25 and/or trace patterns can increase the incidence of short circuits in the package 10 , and accordingly packages with these defects are typically discarded.
- An apparatus in according with one aspect of the invention includes a microelectronic substrate, a support member carrying the microelectronic substrate, and a connection structure carried by the support member.
- the connection structure can have a bond site configured to receive a flowable conductive material, such as solder, and the connection site can further have at least two elongated members connected to and extending outwardly from the bond site. Each elongated member can be configured to receive at least a portion of the flowable conductive material from the bond site, and none of the elongated members is electrically coupled to the microelectronic substrate.
- connection structure can be a first connection structure and the elongated members can be first elongated members.
- the apparatus can include a second connection structure carried by the support member and having a second bond site configured to receive a flowable conductive material.
- the second connection structure can be electrically coupled to the microelectronic substrate and can have second elongated members extending outwardly from the second bond site, with each of the second elongated members configured to receive at least a portion of the flowable conductive material from the second bond site.
- the number of second elongated members for each second connection structure can equal the number of first elongated members for the first connection structure.
- the invention is also directed to a method for coupling a flowable conductive material to a microelectronic substrate.
- the method can include aligning a support member to receive the flowable conductive material, with the support member having a support surface configured to carry a microelectronic substrate, and further having a first connection structure and second connection structure.
- the first connection structure can have a first bond site configured to receive the flowable conductive material and can be configured to remain decoupled from the microelectronic substrate when a support member carries the microelectronic substrate.
- the second connection structure can have a second bond site configured to receive the flowable conductive material, and can be configured to be electrically coupled to the microelectronic substrate when the support member carries the microelectronic substrate.
- the method can further include disposing a first quantity of the flowable conductive material on the first bond site, wicking a first portion of the first quantity of flowable material along first elongated members connected to and extending outwardly from the first bond site, and disposing a second quantity of the flowable conductive material on the second bond site.
- the method can further include wicking a second portion of the second quantity of flowable conductive material along second elongated members extending outwardly from the second bond site, with the second portion of the flowable conductive material having a volume approximately equal to a volume of the first portion.
- the first quantity of flowable conductive material can form a first conductive coupler
- the second quantity can form a second conductive coupler
- each conductive coupler can project from the support member by approximately the same distance.
- FIG. 1 is a bottom view of a microelectronic device package in accordance with the prior art, with selected features shown schematically.
- FIG. 2 is a partially exploded illustration of a test apparatus for testing microelectronic device packages in accordance with the prior art.
- FIG. 3A is a plan view of a support member having active and inactive connection structures in accordance with an embodiment of the invention.
- FIG. 3B is an enlarged view of a portion of the support member shown in FIG. 3A , connected to a microelectronic substrate in accordance with an embodiment of the invention.
- FIG. 3C is an isometric view of portions of active and inactive connection structures, with certain features shown schematically in accordance with an embodiment of the invention.
- FIG. 3D is an enlarged plan view of another portion of the support member shown in FIG. 3A , connected to a microelectronic substrate in accordance with an embodiment of the invention.
- FIG. 4 is an enlarged plan view of a portion of a support member in accordance with another embodiment of the invention.
- FIG. 5 is a plan view of a portion of a support member having active and inactive connection structures configured for electroplating in accordance with another embodiment of the invention.
- FIG. 6 is a plan view of a portion of a support member having active and inactive connection structures configured for electroless plating in accordance with another embodiment of the invention.
- FIG. 7 is a plan view of a portion of a support member having active and inactive connection structures configured for electroplating in accordance with yet another embodiment of the invention.
- FIG. 8 is a plan view of a portion of a support member having active and inactive connection structures configured for electroless plating in accordance with still another embodiment of the invention.
- FIG. 9 is a schematic illustration of a device that includes apparatuses in accordance with another aspect of the invention.
- FIG. 10 is a cross-sectional side view of an apparatus including a microelectronic substrate and a connection structure in accordance with another embodiment of the invention.
- FIG. 11 is a plan view of the apparatus shown in FIG. 10 in accordance with an embodiment of the invention.
- FIG. 12A is a cross-sectional side view of an apparatus including a microelectronic substrate and a connection structure having elongated members in accordance with yet another embodiment of the invention.
- FIG. 12B is a top isometric view of a portion of the apparatus shown in FIG. 12A .
- FIG. 13A is a cross-sectional side view of an apparatus including a microelectronic substrate and a connection structure in accordance with still another embodiment of the invention.
- FIG. 13B is a top isometric view of a portion of the apparatus shown in FIG. 13A .
- FIG. 14 is a top plan view of a support member in accordance with another embodiment of the invention.
- FIG. 15 is a bottom plan view of the support member shown in FIG. 14 in accordance with an embodiment of the invention.
- microelectronic substrate is used throughout to include substrates upon which and/or in which microelectronic circuits or components, data storage elements or layers, and/or vias or conductive lines are or can be fabricated.
- microelectronic substrate is used throughout to include substrates upon which and/or in which microelectronic circuits or components, data storage elements or layers, and/or vias or conductive lines are or can be fabricated.
- the solder balls and/or trace patterns of the packaged device can become dislodged during testing, which typically requires discarding the package.
- the inactive solder balls and traces may become dislodged more frequently than the active solder balls and traces. Accordingly, in several of the embodiments described below, the inactive traces (or connection structures) are more securely attached to the support member, and/or are configured to be symmetric with the active traces (or connection structures).
- the solder balls or other conductive couplers disposed on the inactive connection structures can have a size, shape and support generally similar to the size, shape and support of the conductive couplers disposed on the active connection structures.
- the package can be less likely to be damaged during testing or installation.
- FIG. 3A is a plan view of an apparatus 110 having a support member 120 in accordance with an embodiment of the invention.
- the support member 120 can have a first surface 121 that supports active connection structures 130 and inactive connection structures 150 .
- the first surface 121 can also include plating buses 124 (shown in FIG. 3A as edge plating buses 124 a and a central plating bus 124 b ) that provide current for plating conductive materials onto the active connection structures 130 and the inactive connection structures 150 as these structures are manufactured.
- the support member 120 can further include a second surface 122 facing in an opposite direction from the first surface 121 and configured to support a microelectronic substrate for coupling to the active connection structures 130 .
- the support member 120 can include a relatively thin sheet of flexible, epoxy resin, such as BT (bimaleimide triazine) or another suitable material.
- FIG. 3B is a detailed plan view of a portion of the apparatus 110 described above with reference to FIG. 3A , attached to a microelectronic substrate 140 .
- the central plating bus 124 FIG. 3A
- the microelectronic substrate 140 has been mounted to the second surface 122 of the support member 120 such that wire bond pads 141 of the microelectronic substrate 140 are accessible through the slot 123 for connecting to the active connection structures 130 on the first surface 121 of the support member 120 .
- the active connection structures 130 can each include an active bond site 131 , such as a ball bond pad, which is configured to support a volume of a flowable conductive material, such as solder.
- a flowable conductive material such as solder.
- the active connection structure 130 can further include two active elongated members 133 , shown in FIG. 3B as active elongated members 133 a and 133 b .
- the active elongated member 133 a extends away from the slot 123 for connecting to the edge plating bus 124 a ( FIG. 3A ).
- the active elongated member 133 b extends between the active bond site 131 and a wire bond pad 132 positioned adjacent to the slot 123 .
- the wire bond pad 132 can be connected with a wire bond 142 to a corresponding one of the wire bond pads 141 of the microelectronic substrate 140 to provide electrical communication between the wire bond pad 141 and the active bond site 131 .
- the inactive connection structures 150 can each include an inactive bond site 151 , such as a ball bond pad, coupled to two inactive elongated members 153 , shown in FIG. 3B as inactive elongated members 153 a and 153 b . Accordingly, the inactive bond site 151 can support a flowable conductive material, such as a solder ball.
- the inactive elongated member 153 a extends away from the slot 123 for connecting to the edge plating bus 124 a ( FIG. 3A ).
- the inactive elongated member 153 b can be shorter than the inactive elongated member 153 a to define an elongated tab shape, and can remain electrically decoupled from the microelectronic substrate 140 .
- the inactive bond sites 151 are not electrically connected to the microelectronic substrates 140 ; however, the solder balls they support (in combination with the solder balls of the active bond sites 131 ) can form a uniform pattern that is compatible with a variety of electronic devices and test fixtures.
- FIG. 3C is an isometric view of a portion of the support member 120 showing an active connection structure 130 and an inactive connection structure 150 , each carrying a quantity of flowable conductive material 125 in accordance with an embodiment of the invention.
- the flowable conductive material 125 can form conductive couplers 129 (such as solder balls), shown in FIG. 3C as an active conductive coupler 129 a supported by the active connection structure 130 , and an inactive conductive coupler 129 b supported by the inactive connection structure 150 .
- the active elongated members 133 a,b and the inactive elongated members 153 a,b can include materials that are easily wetted by the flowable conductive material 125 .
- the elongated members 153 a,b and 133 a,b can include nickel, gold, and/or copper or other metallic constituents. Accordingly, when the flowable conductive material 125 is disposed on the bond sites 131 and 151 , it tends to wick along the elongated members 133 a,b and 153 a,b , respectively. When the flowable conductive material 125 solidifies to form the conductive couplers 129 , it can have an at least partially elipsoid shape.
- the support member 120 can optionally include a cover layer 126 attached to the first surface 121 with the connection structures 130 and 150 disposed between the cover layer 126 and the first surface 121 .
- the cover layer 126 can include a solder mask, and in other embodiments, the cover layer 126 can include other materials.
- the cover layer 126 can have apertures 127 (shown as apertures 127 a and 127 b ) aligned with the bond sites 131 and 151 , respectively.
- the apertures 127 are sized to leave the bond sites 131 and 151 exposed, while covering at least part of each elongated member 133 a,b and 153 a,b to aid in securing the elongated members to the support member 120 .
- the apertures are sized to leave the bond sites 131 and 151 exposed while covering each elongated member 133 a,b and 153 a,b up to the edge of the corresponding bond site 131 , 151 .
- the elongated members 133 a,b can be secured directly to the first surface 121 without the cover layer 126 .
- the bond sites 131 and 150 can each have a diameter of about 330 microns, and each elongated member 133 a,b and 153 a,b (and in particular, the inactive elongated member 153 b ) can have a length L of at least 250 microns.
- the apertures 127 a,b in the cover layer 126 can have a diameter of about 430 microns. Accordingly, each bond site 131 , 151 can be completely exposed through the corresponding aperture 127 a , 127 b .
- each elongated member 133 a,b and 153 a,b can also be exposed for a distance D 1 of about 50 microns, measured from the edge of the corresponding bond site 131 , 151 , respectively.
- the elongated member 153 b can be covered by the cover layer 126 for a distance D 2 of about 200 microns, and the remaining elongated members can be covered for distances greater than D 2 .
- the foregoing dimensions can have other values.
- each elongated member 153 a,b and 133 a,b can have approximately the same width W in a direction transverse to the elongation direction to increase the likelihood that the flowable conductive material 125 will wick along each elongated member in at least approximately the same way.
- the angular spacing between the active elongated members 133 a and 133 b can be about the same as the angular spacing between the inactive elongated members 131 a and 131 b (about 180° in FIGS. 3 A-C).
- the number of inactive elongated members 153 extending away from the inactive bond site 151 is equal to the number of active elongated members 133 extending away from the active bond site 131 . Accordingly, the cover layer 126 (or alternatively the elongated members alone) can provide approximately the same securing force to both the inactive connection structure 150 and the active connection structure 130 . As a result, the inactive elongated members 153 a,b can be less likely to pull away from the support member 120 when subjected to stresses, such as shear stresses which may be imposed on the conductive couplers 129 during testing.
- This feature can apply when the cover layer 126 covers some or all of the elongated members, and/or when the cover layer 126 is not implemented. This is unlike some conventional arrangements (such as those described above with reference to FIGS. 1 and 2 ) for which the inactive connection structure may have fewer elongated members than the active connection structure and may accordingly be more likely to pull away from the support member when subjected to shear or other stresses.
- the inactive elongated members 153 can wick away the flowable conductive material 125 in generally the same manner and to generally the same extent as the active elongated members 133 .
- the number of inactive elongated members 153 extending away from each inactive bond site 151 can be the same as the number of active elongated members 133 extending away from each active bond site 131 , the flowable conductive material 125 will tend to wick away from both bond sites in generally the same way. Accordingly, approximately the same volume of flowable conductive material will tend to wick along each elongated member and away from each bond site, whether the bond site is active or inactive.
- the angular spacing between adjacent inactive elongated members 153 can be about the same as the angular spacing between adjacent active elongated members 133 .
- the overall size and shape of flowable conductive material 125 remaining on the inactive bond site 151 (forming the inactive conductive coupler 129 b ) can be approximately the same as the overall size and shape of the flowable conductive material 125 remaining on the active bond site 131 (forming the active conductive coupler 129 a ).
- the height H 2 by which the inactive conductive coupler 129 b projects from the support member 120 can be at least approximately the same as the height H 1 by which the active conductive coupler 129 a projects from the support member 120 .
- the distance D can be at least approximately the same for both the active elongated members 133 a,b and the inactive elongated members 153 a,b .
- the flowable conductive material 125 (which tends to wick along the exposed portions of the elongated members, but not beneath the cover layer 126 ) can wick away from the inactive bond site 151 in generally the same manner and to generally the same extent as it wicks away from the active bond site 131 .
- the shape of the inactive conductive coupler 129 b can be at least approximately identical to the shape of the active conductive coupler 129 a.
- the inactive conductive couplers 129 b can be contacted by a conventional test fixture (such as the fixture 60 shown in FIG. 2 ) in generally the same manner as are the active conductive couplers 129 a because the shapes and sizes of the conductive couplers 129 a,b are about the same.
- a conventional test fixture such as the fixture 60 shown in FIG. 2
- the inactive solder balls may project from the support member by a greater distance than the active solder balls because the solder disposed on the inactive ball bond pads has fewer avenues along which to wick away.
- the inactive solder balls may come under greater stress during testing and may be more likely to become dislodged.
- FIG. 3D is an enlarged plan view of another portion of the apparatus 110 described above with reference to FIG. 3A .
- Three of the active connection structures 130 shown in FIG. 3D have an electroplating trace 134 connected between the central plating bus 124 b and the corresponding wire bond pad 132 .
- These active connection structures 130 also have an active elongated member 133 a extending between the wire bond pad 132 and the corresponding bond site 131 .
- These active connection structures 130 can further include an active elongated member 133 b having an elongated tab shape generally similar to that of the inactive elongated members 153 b described above. Accordingly, the active connection structures 130 and the inactive connection structure 150 shown in FIG.
- 3D can each have the same number of elongated members extending from the corresponding bond sites, and can accordingly carry conductive couplers (not shown in FIG. 3D ) having at least approximately similar shapes in a manner generally similar to that described above with reference to FIGS. 3 A-C.
- FIGS. 4-8 illustrate support members with connection structures having arrangements in accordance with further embodiments of the invention.
- FIG. 4 illustrates a support member 420 having an active connection structure 430 and an inactive connection structure 450 , neither of which includes an electroplating trace. Accordingly, the support member 420 can be processed electrolessly to plate the connection structures 430 and 450 during manufacturing.
- the active connection structure 430 can include an active bond site 431 having an active elongated member 433 a connected to a corresponding wire bond pad 432 in a manner generally similar to that described above.
- the active connection structure 430 can also include a tab-shaped active elongated member 433 b extending away from the active bond site 431 .
- the inactive connection structure 450 can include an inactive bond site 451 and two inactive elongated members 453 a and 453 b .
- the inactive elongated member 453 b can include an anchor 455 which can increase the strength of the connection between the inactive connection structure 450 and the support member 420 .
- the anchor 455 can provide more surface area beneath the corresponding cover layer 126 (not shown in FIG. 4 ), which can further reduce the likelihood for tearing the inactive connection structure 450 away from the support member 420 when the inactive connection structure 450 is subjected to a shear stress.
- the anchor 455 can have a generally triangular shape, and in other embodiments, the anchor 455 can have other shapes.
- the anchor 455 can be included as part of any of the elongated members described above or below, when space permits.
- FIG. 5 illustrates an embodiment of a support member 520 having an active connection structure 530 with three active elongated members 533 a , 533 b and 533 c .
- the support member 520 can further include an inactive connection structure 550 having three inactive elongated members 553 a , 553 b and 553 c .
- the elongated members 533 a and 553 a can be coupled to an edge plating bus (not shown in FIG. 5 ), and the elongated member 533 b can be coupled to a wire bond pad (not shown in FIG. 5 ) in a manner generally similar to that described above.
- the elongated members 533 a , 533 b and 553 a , as well as the elongated members 533 c , 553 b and 553 c (which are not connected to other conductive structures) can extend beneath a cover layer 526 to secure the connection structures to the support member 520 , as was generally discussed above.
- the cover layer 526 can be eliminated and the elongated members can be secured to the support member 520 with other techniques.
- the active connection structure 530 and the inactive connection structure 550 can each include the same number of elongated members and can accordingly support conductive couplers having at least approximately similar shapes and sizes.
- each elongated member can be angularly spaced apart from its neighbor by about 120°.
- the angular spacing can have other values for which the angular spacings for the active elongated members 533 a - c are at least generally similar to those for the inactive elongated members 553 a - c.
- FIG. 6 illustrates a support member 620 having an active connection structures 630 and an inactive connection structures 650 .
- connection structures are generally similar to the connection structures described above except that the connection structures 630 and 650 are configured for electroless plating.
- the active connection structure 630 can include an active elongated member 633 b coupled to a wire bond pad (not shown in FIG. 6 ), and can also include two tab-shaped elongated members 633 a and 633 c that are not connected to other conductive structures. All three inactive elongated members 653 a - c can be unconnected to other conductive structures.
- FIG. 7 illustrates a support member 720 having an active connection structure 730 with four active elongated members 733 a - d , and an inactive connection structure 750 having four inactive elongated members 753 a - d .
- the elongated members 733 a and 753 a are each configured to be coupled to a plating bus in a manner generally similar to that described above with reference to FIGS. 3B and 5 .
- each elongated member is angularly spaced apart from its neighbor by about 90°.
- the angular spacing can have other values with the angular spacing between adjacent active elongated members 733 a - d being approximately the same as the angular spacing between inactive elongated members 753 a - d , and the number of active elongated members 733 being the same as the number of inactive elongated members.
- FIG. 8 illustrates a support member 820 having an active connection structure 830 and an inactive connection structure 850 , each configured for electroless plating.
- the active connection structure 830 can have four active elongated members 833 a - d .
- the inactive connection structure 850 can have four inactive elongated members 853 a - d .
- the number of and spacing between active elongated members 833 a - d can be at least approximately the same as for the inactive elongated members 853 a - d.
- the active and inactive connection structures can have other shapes and arrangements for which the number of elongated members extending outwardly from an active bond site is equal to the number of elongated members extending outwardly from an inactive bond site.
- the connection structures and, optionally, the corresponding cover layers can support conductive couplers (such as solder balls) having generally similar shapes and similar behaviors, regardless of whether the conductive couplers are carried by an active bond site or an inactive bond site.
- FIG. 9 is a schematic illustration of an electronic device 970 that includes one or more apparatuses 910 in accordance with an embodiment of the invention.
- the electronic device can include a computer, a telecommunication device or another device that incorporates microelectronic components.
- the device 910 can include a housing 971 containing a processor 973 , a memory 972 and/or an input/output device 974 , each of which can include an apparatus 910 generally similar to any of the apparatuses described above with reference to FIGS. 3A-8 .
- the device 910 can also include other apparatuses 910 in addition to or in lieu of the apparatuses incorporated into the processor 973 , the memory 972 and/or the input/output device 974 .
- FIG. 10 is a cross-sectional side view of an apparatus 1010 that includes a microelectronic substrate 1040 having a connection structure 1030 disposed on it in accordance with another embodiment of the invention.
- the microelectronic substrate 1040 can have a first surface 1045 and a second surface 1046 facing opposite from the first surface 1045 .
- the microelectronic substrate 1040 can further include active microelectronic features 1044 positioned proximate to the second surface 1046 , and a first bond site 1041 (such as a bond pad), also positioned proximate to the second surface 1046 .
- the connection structure 1030 can include a second bond site 1031 spaced apart from the first bond site 1041 .
- the second bond site 1031 can include a solder ball pad, and can support a conductive coupler 1029 , such as a solder ball.
- the appuratus 1010 can have a “flip chip” configuration.
- the second bond site 1031 can have other configurations and can support other types of conductive couplers.
- the connection structure 1030 can include an electrically conductive material (such as a metal redistribution layer) and can have a first surface 1037 facing toward the second surface 1046 of the microelectronic substrate 1040 , and a second surface 1038 facing opposite from the first surface 1037 .
- connection structure 1030 can further include elongated members 1033 a and 1033 b extending outwardly from the second bond site 1031 .
- the elongated member 1033 a can be connected between the second bond site 1031 of the connection structure and the first bond site 1041 of the microelectronic substrate 1040 .
- the elongated member 1033 b can have a generally tab-shaped configuration, generally similar to those described above.
- the apparatus 1010 can include passivation layers 1035 (shown as a first passivation layer 1035 a and a second passivation layer 1035 b ) positioned between electrically conductive elements of the apparatus 1010 to at least partially isolate these elements from each other.
- the first passivation layer 1035 a can be positioned between the second surface 1046 (including the active microelectronic features 1044 ) of the microelectronic substrate 1040 , and the first surface 1037 of the connection structure 1030 .
- the second passivation layer 1035 b can be positioned adjacent to the second surface 1038 of the connection structure 1030 .
- the second passivation layer 1035 b can perform at least some of the same functions as the cover layer 126 described above reference to FIG. 3C . Accordingly, the second passivation layer 1035 b can aid in securing the connection structure 1030 to the microelectronic substrate 1044 . In one embodiment, the second passivation layer 1035 b can extend over the entire lengths of the elongated members 1033 a , 1033 b , while leaving the second connection site 1031 exposed to receive the conductive coupler 1029 .
- the second passivation layer 1035 b can leave portions of the elongated members 1033 a , 1033 b proximate to the second bond site 1031 exposed to allow the conductive coupler 1029 to wick along the elongated members 1033 a , 1033 b , generally as was described above with reference to FIG. 3C .
- FIG. 11 is a plan view of an embodiment of the apparatus 1010 described above with reference to FIG. 10 .
- each of the elongated members 1033 a can extend between the corresponding first bond site 1041 of the microelectronic substrate 1040 and the corresponding second bond site 1031 , and can be generally co-planer with each other.
- the elongated members 1033 a can cross over each other, for example, by extending into different planes normal to the plane of FIG. 11 to avoid electrical contact with the elongated members over which they pass.
- the apparatus 1010 can include an inactive connection structure 1150 having a second bond site 1151 .
- Elongated members 1153 a , 1153 b can extend outwardly from the second bond site 1151 , without being electrically connected to the microelectronic substrate 1040 .
- the inactive connection structures 1150 can support a conductive coupler to provide uniformity with a pre-selected pattern of conductive couplers, in a manner generally similar to that described above.
- FIGS. 12 A-B illustrate a cross-sectional side view and top isometric view, respectively, of an apparatus 1210 in accordance with another embodiment of the invention.
- the apparatus 1210 can include a microelectronic substrate 1240 having a first bond site 1241 , and a connection structure 1230 having a second bond site 1231 .
- the microelectronic substrate 1240 can include active devices 1244 electrically coupled to the first bond site 1241 .
- the connection structure 1230 can include a plurality of elongated members 1233 (two are shown in FIGS. 12 A-B as elongated members 1233 a , 1233 b ) extending outwardly from the second bond site 1231 .
- the elongated member 1233 a can be coupled between the first bond site 1241 and the second bond site 1231 and the elongated member 1233 b can include an elongated tab-shaped member generally similar to those described above.
- the bond site 1231 can include a support portion 1280 carrying a wettable portion 1281 .
- the support portion 1280 can have a composition generally similar to that of the elongated members 1233 a - 1233 b (for example, a composite of aluminum, nickel, copper and titanium), and the wettable portion 1281 can have a different composition (such as a composite of nickel and copper). Accordingly, the wettable portion 1281 can be configured to be wetted by a flowable conductive material (such as solder) to support and electrically couple to a conductive coupler 1229 .
- a flowable conductive material such as solder
- the apparatus 1210 can include a die passivation layer 1235 positioned between the active devices 1244 and the connection structure 1230 .
- a first dielectric layer 1236 a can be disposed between the passivation layer 1235 and the elongated members 1233 a , 1233 b
- a second dielectric layer 1236 b can be disposed on top of the connection structure 1230 .
- the elongated members 1233 a , 1233 b are not wetted by the conductive coupler 1229 because the wettable portion 1281 of the second bond site 1231 does not extend over the elongated members.
- the elongated members 1233 a , 1233 b can be wetted by the conductive coupler 1229 in a manner generally similar to that described above with reference to FIG. 3C .
- FIG. 13A is a cross-sectional side view of an apparatus 1310 having a connection structure 1330 in accordance with another embodiment of the invention.
- FIG. 13B is a top isometric view of a portion of the apparatus 1310 shown in FIG. 13A .
- the apparatus 1310 can include a microelectronic substrate 1340 having a first bond site 1341 , a passivation layer 1335 , and a first dielectric layer 1336 a disposed on the passivation layer 1335 .
- the connection structure 1330 can be disposed on the first dielectric layer 1336 a and can include a second bond site 1331 electrically connected to the first bond site 1341 with a connecting trace 1333 .
- the second bond site 1331 can include a generally circular first portion 1382 positioned on the first dielectric layer 1336 a and electrically connected to the connecting trace 1333 .
- a second dielectric layer 1336 b can be disposed on the connection structure 1330 , including the first portion 1382 of the second bond site 1331 .
- the second bond site 1331 can further include a second portion 1383 electrically connected to the first portion 1382 and having at least two elongated members 1333 a , 1333 b extending outwardly therefrom over the second dielectric layer 1336 b .
- the first portion 1382 can include a composite of titanium and either copper or aluminum
- the second portion 1383 can include a composite of titanium, copper, and nickel.
- these components can include other constituents.
- the elongated member 1333 a , 1333 b can provide some or all of the advantages described above with reference to the foregoing figures.
- FIG. 14 illustrates a top plan view of a support member 1420 for supporting a microelectronic substrate in accordance with another embodiment of the invention.
- the support member 1420 can include a first surface 1421 and a second surface 1422 facing opposite from the first surface 1421 .
- the second surface 1422 can be configured to carry a microelectronic substrate.
- the support member 1420 can include connection structures 1430 for connecting the microelectronic substrate supported on the support member 1420 to other electronic or microelectronic devices.
- each connection structure 1430 can include a first bond site (such as a solder pad) described below with reference to FIG.
- connection structure 1430 can further include electroplating traces 1434 configured to connect to a source of electrical potential for plating the connection structure 1430 , generally in a manner similar to that described above.
- the connection structures 1430 can be plated with an electroless process.
- connection structures 1430 can further include a connecting trace 1439 that extends outwardly from the second bond site 1432 .
- the connecting trace 1439 can be coupled to a via 1436 that extends from the second surface of the support member 1420 to the first surface 1421 .
- the via 1436 can be electrically coupled to the first bond site of the support member 1420 , as described in greater detail below with reference to FIG. 15 .
- FIG. 15 is a bottom plan view of an embodiment of the support member 1420 described above with reference to FIG. 14 .
- each of the vias 1436 of the connection structures 1430 can extend through the support member 1420 to the first surface 1421 .
- Each via 1436 can be electrically connected to a corresponding first bond site 1431 (such as a solder ball pad), to provide for electrical communication between the first bond site 1431 and the second bond site 1432 ( FIG. 14 ) on the opposite side of the support member.
- each connection structure 1430 can include at least two elongated members 1433 a , 1433 b extending outwardly from the first bond site 1431 .
- the elongated member 1433 b can extend between the first bond site 1431 and the via 1436 to provide for electrical communication between these two components of the connection structure 1430 .
- the elongated member 1433 a can include a generally tab-shaped structure generally similar to those described above. Accordingly, the elongated members 1433 a , 1433 b can provide some or all of the functions and advantages described above with reference to FIGS. 3A-8 .
- the elongated members 1433 a , 1433 b can aid in securing the first bond site 1431 to the first surface 1421 of the support member 1420 .
- the support member 1420 can include a cover layer generally similar to that described above with reference to FIG. 3C to aid in attaching the connection structure 1430 to the first surface 1421 . Accordingly, the cover layer can be configured to either allow or prevent wicking of a flowable conductive material along the elongated members 1433 a , 1433 b.
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Abstract
A method and apparatus for supporting a microelectronic substrate. The apparatus can include a microelectronic substrate and a support member carrying the microelectronic substrate. The apparatus can further include a first connection structure carried by the support member. The first connection structure can have a first bond site configured to receive a flowable conductive material, and can further have at least two first elongated members connected and extending outwardly from the first bond site. Each first elongated member can be configured to receive at least a portion of the flowable conductive material from the first bond site, with none of the first elongated members being electrically coupled to the microelectronic substrate. The assembly can further include a second connection structure that is electrically coupled to the microelectronic substrate and that can include second elongated members extending away from a second bond site. The number of second elongated members can be equal to the number of first elongated members.
Description
- The present invention is directed toward methods and apparatuses for supporting microelectronic substrates. Conventional microelectronic device packages typically include a microelectronic substrate mounted on a support member and packaged with an encapsulant. In one conventional arrangement shown in
FIG. 1 , amicroelectronic device package 10 can include asupport member 20 having afront surface 21 and arear surface 22 facing opposite thefront surface 21. Thesupport member 20 can also have aslot 23 extending from thefront surface 21 to therear surface 22. A microelectronic substrate 40 (visible through the slot 23) is attached to therear surface 22, and haswire bond pads 41 that are accessible through theslot 23 for coupling to thesupport member 20. Accordingly, thesupport member 20 can includeactive trace patterns 30, each of which has awire bond pad 32, aball bond pad 31, and a connectingtrace 33 extending between thewire bond pad 32 and theball bond pad 31. Eachactive trace pattern 30 can also include anelectroplating trace 34 coupled to anelectroplating bus 24 to provide electrically conductive coatings on theactive trace pattern 30 during the formation of thesupport member 20. - In operation, the
wire bond pads 32 of theactive trace patterns 30 are connected to correspondingwire bond pads 41 of themicroelectronic substrate 40 withwire bonds 42. A solder ball (not shown inFIG. 1 ) can then be disposed on eachball bond pad 31. Thewire bonds 42 and thewire bond pads microelectronic substrate 40. - In order to conform with industry standards,
similar device packages 10 are often required to have the same number of solder balls, even if not all the solder balls are required to provide communication with themicroelectronic substrate 40. Accordingly, thesupport member 20 can includeinactive trace patterns 50. Eachinactive trace pattern 50 can include aball bond pad 51 that supports a solder ball, and anelectroplating trace 54 for electroplating conductive coatings on theinactive trace pattern 50. Theinactive trace patterns 50 do not include awire bond pad 32 or acorresponding connecting trace 33. Accordingly, theinactive trace patterns 50 do not provide electrical communication to or from themicroelectronic substrate 40. However, theinactive trace patterns 50 can support solder balls which, together with the solder balls on theactive trace patterns 30, define a uniform pattern of solder balls that can be compatible with a variety of devices in which thepackage 10 is installed and/or tested. -
FIG. 2 illustrates aconventional test apparatus 60 for testing device packages such as thepackage 10 described above with reference toFIG. 1 . In one aspect of this arrangement, thetest apparatus 60 can include abase 61 that supports thedevice package 10. Anoverlying frame 62 secures thepackage 10 to thebase 61. When thepackage 10 is secured to thebase 61,solder balls 25 of thepackage 10 remain exposed through anopening 65 in theframe 62. Atest jig 63 is then aligned with thebase 61 such thattest contacts 64 of thejig 63 make physical and electrical contact with thesolder balls 25 of thepackage 10. Thetest jig 63 is then used to test the operational characteristics of thedevice package 10. - One drawback with the foregoing arrangement is that the
test jig 63 can partially or completely dislodge some of thesolder balls 25 and/or the trace patterns to which thesolder balls 25 are connected. The dislodgedsolder balls 25 and/or trace patterns can increase the incidence of short circuits in thepackage 10, and accordingly packages with these defects are typically discarded. - The present invention is directed toward methods and apparatuses for supporting microelectronic substrates. An apparatus in according with one aspect of the invention includes a microelectronic substrate, a support member carrying the microelectronic substrate, and a connection structure carried by the support member. The connection structure can have a bond site configured to receive a flowable conductive material, such as solder, and the connection site can further have at least two elongated members connected to and extending outwardly from the bond site. Each elongated member can be configured to receive at least a portion of the flowable conductive material from the bond site, and none of the elongated members is electrically coupled to the microelectronic substrate.
- In a further aspect of the invention, the connection structure can be a first connection structure and the elongated members can be first elongated members. The apparatus can include a second connection structure carried by the support member and having a second bond site configured to receive a flowable conductive material. The second connection structure can be electrically coupled to the microelectronic substrate and can have second elongated members extending outwardly from the second bond site, with each of the second elongated members configured to receive at least a portion of the flowable conductive material from the second bond site. The number of second elongated members for each second connection structure can equal the number of first elongated members for the first connection structure.
- The invention is also directed to a method for coupling a flowable conductive material to a microelectronic substrate. The method can include aligning a support member to receive the flowable conductive material, with the support member having a support surface configured to carry a microelectronic substrate, and further having a first connection structure and second connection structure. The first connection structure can have a first bond site configured to receive the flowable conductive material and can be configured to remain decoupled from the microelectronic substrate when a support member carries the microelectronic substrate. The second connection structure can have a second bond site configured to receive the flowable conductive material, and can be configured to be electrically coupled to the microelectronic substrate when the support member carries the microelectronic substrate. The method can further include disposing a first quantity of the flowable conductive material on the first bond site, wicking a first portion of the first quantity of flowable material along first elongated members connected to and extending outwardly from the first bond site, and disposing a second quantity of the flowable conductive material on the second bond site. The method can further include wicking a second portion of the second quantity of flowable conductive material along second elongated members extending outwardly from the second bond site, with the second portion of the flowable conductive material having a volume approximately equal to a volume of the first portion. The first quantity of flowable conductive material can form a first conductive coupler, the second quantity can form a second conductive coupler, and each conductive coupler can project from the support member by approximately the same distance.
-
FIG. 1 is a bottom view of a microelectronic device package in accordance with the prior art, with selected features shown schematically. -
FIG. 2 is a partially exploded illustration of a test apparatus for testing microelectronic device packages in accordance with the prior art. -
FIG. 3A is a plan view of a support member having active and inactive connection structures in accordance with an embodiment of the invention. -
FIG. 3B is an enlarged view of a portion of the support member shown inFIG. 3A , connected to a microelectronic substrate in accordance with an embodiment of the invention. -
FIG. 3C is an isometric view of portions of active and inactive connection structures, with certain features shown schematically in accordance with an embodiment of the invention. -
FIG. 3D is an enlarged plan view of another portion of the support member shown inFIG. 3A , connected to a microelectronic substrate in accordance with an embodiment of the invention. -
FIG. 4 is an enlarged plan view of a portion of a support member in accordance with another embodiment of the invention. -
FIG. 5 is a plan view of a portion of a support member having active and inactive connection structures configured for electroplating in accordance with another embodiment of the invention. -
FIG. 6 is a plan view of a portion of a support member having active and inactive connection structures configured for electroless plating in accordance with another embodiment of the invention. -
FIG. 7 is a plan view of a portion of a support member having active and inactive connection structures configured for electroplating in accordance with yet another embodiment of the invention. -
FIG. 8 is a plan view of a portion of a support member having active and inactive connection structures configured for electroless plating in accordance with still another embodiment of the invention. -
FIG. 9 is a schematic illustration of a device that includes apparatuses in accordance with another aspect of the invention. -
FIG. 10 is a cross-sectional side view of an apparatus including a microelectronic substrate and a connection structure in accordance with another embodiment of the invention. -
FIG. 11 is a plan view of the apparatus shown inFIG. 10 in accordance with an embodiment of the invention. -
FIG. 12A is a cross-sectional side view of an apparatus including a microelectronic substrate and a connection structure having elongated members in accordance with yet another embodiment of the invention. -
FIG. 12B is a top isometric view of a portion of the apparatus shown inFIG. 12A . -
FIG. 13A is a cross-sectional side view of an apparatus including a microelectronic substrate and a connection structure in accordance with still another embodiment of the invention. -
FIG. 13B is a top isometric view of a portion of the apparatus shown inFIG. 13A . -
FIG. 14 is a top plan view of a support member in accordance with another embodiment of the invention. -
FIG. 15 is a bottom plan view of the support member shown inFIG. 14 in accordance with an embodiment of the invention. - The present disclosure describes packaged microelectronic substrates and methods for forming such packages. The term “microelectronic substrate” is used throughout to include substrates upon which and/or in which microelectronic circuits or components, data storage elements or layers, and/or vias or conductive lines are or can be fabricated. Many specific details of certain embodiments of the invention are set forth in the following description and in
FIGS. 3A-9 to provide a thorough understanding of these embodiments. One skilled in the art, however, will understand that the present invention may have additional embodiments, and that the invention may be practiced without several of the details described below. - As described above with reference to
FIGS. 1 and 2 , a drawback with some conventional arrangements is that the solder balls and/or trace patterns of the packaged device can become dislodged during testing, which typically requires discarding the package. In some cases, it has been observed that the inactive solder balls and traces may become dislodged more frequently than the active solder balls and traces. Accordingly, in several of the embodiments described below, the inactive traces (or connection structures) are more securely attached to the support member, and/or are configured to be symmetric with the active traces (or connection structures). Accordingly, the solder balls or other conductive couplers disposed on the inactive connection structures can have a size, shape and support generally similar to the size, shape and support of the conductive couplers disposed on the active connection structures. As a result, the package can be less likely to be damaged during testing or installation. -
FIG. 3A is a plan view of anapparatus 110 having asupport member 120 in accordance with an embodiment of the invention. Thesupport member 120 can have afirst surface 121 that supportsactive connection structures 130 andinactive connection structures 150. Thefirst surface 121 can also include plating buses 124 (shown inFIG. 3A asedge plating buses 124 a and acentral plating bus 124 b) that provide current for plating conductive materials onto theactive connection structures 130 and theinactive connection structures 150 as these structures are manufactured. Thesupport member 120 can further include asecond surface 122 facing in an opposite direction from thefirst surface 121 and configured to support a microelectronic substrate for coupling to theactive connection structures 130. Thesupport member 120 can include a relatively thin sheet of flexible, epoxy resin, such as BT (bimaleimide triazine) or another suitable material. -
FIG. 3B is a detailed plan view of a portion of theapparatus 110 described above with reference toFIG. 3A , attached to amicroelectronic substrate 140. As shown inFIG. 3B , the central plating bus 124 (FIG. 3A ) has been removed to form aslot 123 that extends through thesupport member 120 from thefirst surface 121 to thesecond surface 122. Themicroelectronic substrate 140 has been mounted to thesecond surface 122 of thesupport member 120 such thatwire bond pads 141 of themicroelectronic substrate 140 are accessible through theslot 123 for connecting to theactive connection structures 130 on thefirst surface 121 of thesupport member 120. - The
active connection structures 130 can each include anactive bond site 131, such as a ball bond pad, which is configured to support a volume of a flowable conductive material, such as solder. When the flowable conductive material is disposed on theactive bond site 131 and placed in a flowable state (for example, in a solder reflow oven), it can form an at least partially spherical or globular shape suitable for electrically and physically connecting theactive connection structure 130 to other devices or circuit elements. Theactive connection structure 130 can further include two active elongated members 133, shown inFIG. 3B as activeelongated members elongated member 133 a extends away from theslot 123 for connecting to theedge plating bus 124 a (FIG. 3A ). The activeelongated member 133 b extends between theactive bond site 131 and awire bond pad 132 positioned adjacent to theslot 123. Thewire bond pad 132 can be connected with awire bond 142 to a corresponding one of thewire bond pads 141 of themicroelectronic substrate 140 to provide electrical communication between thewire bond pad 141 and theactive bond site 131. - The
inactive connection structures 150 can each include aninactive bond site 151, such as a ball bond pad, coupled to two inactive elongated members 153, shown inFIG. 3B as inactiveelongated members inactive bond site 151 can support a flowable conductive material, such as a solder ball. The inactiveelongated member 153 a extends away from theslot 123 for connecting to theedge plating bus 124 a (FIG. 3A ). The inactiveelongated member 153 b can be shorter than the inactiveelongated member 153 a to define an elongated tab shape, and can remain electrically decoupled from themicroelectronic substrate 140. Accordingly, theinactive bond sites 151 are not electrically connected to themicroelectronic substrates 140; however, the solder balls they support (in combination with the solder balls of the active bond sites 131) can form a uniform pattern that is compatible with a variety of electronic devices and test fixtures. -
FIG. 3C is an isometric view of a portion of thesupport member 120 showing anactive connection structure 130 and aninactive connection structure 150, each carrying a quantity of flowableconductive material 125 in accordance with an embodiment of the invention. Accordingly, the flowableconductive material 125 can form conductive couplers 129 (such as solder balls), shown inFIG. 3C as an activeconductive coupler 129 a supported by theactive connection structure 130, and an inactiveconductive coupler 129 b supported by theinactive connection structure 150. In one aspect of this embodiment, the activeelongated members 133 a,b and the inactiveelongated members 153 a,b can include materials that are easily wetted by the flowableconductive material 125. For example, when the flowableconductive material 125 includes solder, theelongated members 153 a,b and 133 a,b can include nickel, gold, and/or copper or other metallic constituents. Accordingly, when the flowableconductive material 125 is disposed on thebond sites elongated members 133 a,b and 153 a,b, respectively. When the flowableconductive material 125 solidifies to form the conductive couplers 129, it can have an at least partially elipsoid shape. - In a further aspect of this embodiment, the
support member 120 can optionally include acover layer 126 attached to thefirst surface 121 with theconnection structures cover layer 126 and thefirst surface 121. In one embodiment, thecover layer 126 can include a solder mask, and in other embodiments, thecover layer 126 can include other materials. In any of these embodiments, thecover layer 126 can have apertures 127 (shown asapertures bond sites bond sites elongated member 133 a,b and 153 a,b to aid in securing the elongated members to thesupport member 120. In an alternative embodiment (shown in dashed lines inFIG. 3C ) the apertures are sized to leave thebond sites elongated member 133 a,b and 153 a,b up to the edge of thecorresponding bond site elongated members 133 a,b can be secured directly to thefirst surface 121 without thecover layer 126. - In one embodiment, the
bond sites elongated member 133 a,b and 153 a,b (and in particular, the inactiveelongated member 153 b) can have a length L of at least 250 microns. Theapertures 127 a,b in thecover layer 126 can have a diameter of about 430 microns. Accordingly, eachbond site aperture portion 128 of eachelongated member 133 a,b and 153 a,b can also be exposed for a distance D1 of about 50 microns, measured from the edge of thecorresponding bond site elongated member 153 b can be covered by thecover layer 126 for a distance D2 of about 200 microns, and the remaining elongated members can be covered for distances greater than D2. In other embodiments, the foregoing dimensions can have other values. - In a further aspect of this embodiment, each
elongated member 153 a,b and 133 a,b can have approximately the same width W in a direction transverse to the elongation direction to increase the likelihood that the flowableconductive material 125 will wick along each elongated member in at least approximately the same way. In yet a further aspect of this embodiment, the angular spacing between the activeelongated members - One feature of the foregoing arrangement is that the number of inactive elongated members 153 extending away from the
inactive bond site 151 is equal to the number of active elongated members 133 extending away from theactive bond site 131. Accordingly, the cover layer 126 (or alternatively the elongated members alone) can provide approximately the same securing force to both theinactive connection structure 150 and theactive connection structure 130. As a result, the inactiveelongated members 153 a,b can be less likely to pull away from thesupport member 120 when subjected to stresses, such as shear stresses which may be imposed on the conductive couplers 129 during testing. This feature can apply when thecover layer 126 covers some or all of the elongated members, and/or when thecover layer 126 is not implemented. This is unlike some conventional arrangements (such as those described above with reference toFIGS. 1 and 2 ) for which the inactive connection structure may have fewer elongated members than the active connection structure and may accordingly be more likely to pull away from the support member when subjected to shear or other stresses. - Another feature of an embodiment of the arrangement described above with reference to FIGS. 3A-C is that the inactive elongated members 153 can wick away the flowable
conductive material 125 in generally the same manner and to generally the same extent as the active elongated members 133. For example, because the number of inactive elongated members 153 extending away from eachinactive bond site 151 can be the same as the number of active elongated members 133 extending away from eachactive bond site 131, the flowableconductive material 125 will tend to wick away from both bond sites in generally the same way. Accordingly, approximately the same volume of flowable conductive material will tend to wick along each elongated member and away from each bond site, whether the bond site is active or inactive. - Another feature of an embodiment of the arrangement described above with reference to FIGS. 3A-C is that the angular spacing between adjacent inactive elongated members 153 can be about the same as the angular spacing between adjacent active elongated members 133. As a result, the overall size and shape of flowable
conductive material 125 remaining on the inactive bond site 151 (forming the inactiveconductive coupler 129 b) can be approximately the same as the overall size and shape of the flowableconductive material 125 remaining on the active bond site 131 (forming the activeconductive coupler 129 a). For example, the height H2 by which the inactiveconductive coupler 129 b projects from thesupport member 120 can be at least approximately the same as the height H1 by which the activeconductive coupler 129 a projects from thesupport member 120. - Yet another feature of an embodiment of the arrangement describe above with reference to FIGS. 3A-C is that the distance D, can be at least approximately the same for both the active
elongated members 133 a,b and the inactiveelongated members 153 a,b. Accordingly, the flowable conductive material 125 (which tends to wick along the exposed portions of the elongated members, but not beneath the cover layer 126) can wick away from theinactive bond site 151 in generally the same manner and to generally the same extent as it wicks away from theactive bond site 131. As a result, the shape of the inactiveconductive coupler 129 b can be at least approximately identical to the shape of the activeconductive coupler 129 a. - An advantage of the foregoing features is that the inactive
conductive couplers 129 b can be contacted by a conventional test fixture (such as thefixture 60 shown inFIG. 2 ) in generally the same manner as are the activeconductive couplers 129 a because the shapes and sizes of theconductive couplers 129 a,b are about the same. This is unlike some conventional arrangements (such as the arrangement described above with reference toFIG. 1 ) in which the inactive solder balls may project from the support member by a greater distance than the active solder balls because the solder disposed on the inactive ball bond pads has fewer avenues along which to wick away. In such conventional arrangements, the inactive solder balls may come under greater stress during testing and may be more likely to become dislodged. -
FIG. 3D is an enlarged plan view of another portion of theapparatus 110 described above with reference toFIG. 3A . Three of theactive connection structures 130 shown inFIG. 3D have anelectroplating trace 134 connected between thecentral plating bus 124 b and the correspondingwire bond pad 132. Theseactive connection structures 130 also have an activeelongated member 133 a extending between thewire bond pad 132 and thecorresponding bond site 131. Theseactive connection structures 130 can further include an activeelongated member 133 b having an elongated tab shape generally similar to that of the inactiveelongated members 153 b described above. Accordingly, theactive connection structures 130 and theinactive connection structure 150 shown inFIG. 3D can each have the same number of elongated members extending from the corresponding bond sites, and can accordingly carry conductive couplers (not shown inFIG. 3D ) having at least approximately similar shapes in a manner generally similar to that described above with reference to FIGS. 3A-C. -
FIGS. 4-8 illustrate support members with connection structures having arrangements in accordance with further embodiments of the invention. For example,FIG. 4 illustrates asupport member 420 having anactive connection structure 430 and aninactive connection structure 450, neither of which includes an electroplating trace. Accordingly, thesupport member 420 can be processed electrolessly to plate theconnection structures active connection structure 430 can include anactive bond site 431 having an activeelongated member 433 a connected to a correspondingwire bond pad 432 in a manner generally similar to that described above. Theactive connection structure 430 can also include a tab-shaped activeelongated member 433 b extending away from theactive bond site 431. - The
inactive connection structure 450 can include aninactive bond site 451 and two inactiveelongated members elongated member 453 b can include ananchor 455 which can increase the strength of the connection between theinactive connection structure 450 and thesupport member 420. For example, theanchor 455 can provide more surface area beneath the corresponding cover layer 126 (not shown inFIG. 4 ), which can further reduce the likelihood for tearing theinactive connection structure 450 away from thesupport member 420 when theinactive connection structure 450 is subjected to a shear stress. In one embodiment, theanchor 455 can have a generally triangular shape, and in other embodiments, theanchor 455 can have other shapes. In still further embodiments, theanchor 455 can be included as part of any of the elongated members described above or below, when space permits. -
FIG. 5 illustrates an embodiment of asupport member 520 having anactive connection structure 530 with three activeelongated members support member 520 can further include aninactive connection structure 550 having three inactiveelongated members elongated members FIG. 5 ), and theelongated member 533 b can be coupled to a wire bond pad (not shown inFIG. 5 ) in a manner generally similar to that described above. Theelongated members elongated members cover layer 526 to secure the connection structures to thesupport member 520, as was generally discussed above. Alternatively, thecover layer 526 can be eliminated and the elongated members can be secured to thesupport member 520 with other techniques. In either embodiment, theactive connection structure 530 and theinactive connection structure 550 can each include the same number of elongated members and can accordingly support conductive couplers having at least approximately similar shapes and sizes. In a further aspect of this embodiment, each elongated member can be angularly spaced apart from its neighbor by about 120°. In other embodiments, the angular spacing can have other values for which the angular spacings for the active elongated members 533 a-c are at least generally similar to those for the inactive elongated members 553 a-c. -
FIG. 6 illustrates asupport member 620 having anactive connection structures 630 and aninactive connection structures 650. These connection structures are generally similar to the connection structures described above except that theconnection structures active connection structure 630 can include an activeelongated member 633 b coupled to a wire bond pad (not shown inFIG. 6 ), and can also include two tab-shapedelongated members -
FIG. 7 illustrates asupport member 720 having anactive connection structure 730 with four active elongated members 733 a-d, and aninactive connection structure 750 having four inactive elongated members 753 a-d. Theelongated members FIGS. 3B and 5 . In one aspect of this embodiment, each elongated member is angularly spaced apart from its neighbor by about 90°. In other embodiments, the angular spacing can have other values with the angular spacing between adjacent active elongated members 733 a-d being approximately the same as the angular spacing between inactive elongated members 753 a-d, and the number of active elongated members 733 being the same as the number of inactive elongated members. -
FIG. 8 illustrates asupport member 820 having anactive connection structure 830 and aninactive connection structure 850, each configured for electroless plating. Accordingly, theactive connection structure 830 can have four active elongated members 833 a-d. Theinactive connection structure 850 can have four inactive elongated members 853 a-d. As described above, the number of and spacing between active elongated members 833 a-d can be at least approximately the same as for the inactive elongated members 853 a-d. - In other embodiments, the active and inactive connection structures can have other shapes and arrangements for which the number of elongated members extending outwardly from an active bond site is equal to the number of elongated members extending outwardly from an inactive bond site. In any of these arrangements, the connection structures and, optionally, the corresponding cover layers, can support conductive couplers (such as solder balls) having generally similar shapes and similar behaviors, regardless of whether the conductive couplers are carried by an active bond site or an inactive bond site.
-
FIG. 9 is a schematic illustration of anelectronic device 970 that includes one ormore apparatuses 910 in accordance with an embodiment of the invention. In one aspect of this embodiment, the electronic device can include a computer, a telecommunication device or another device that incorporates microelectronic components. Accordingly, thedevice 910 can include ahousing 971 containing aprocessor 973, amemory 972 and/or an input/output device 974, each of which can include anapparatus 910 generally similar to any of the apparatuses described above with reference toFIGS. 3A-8 . Thedevice 910 can also includeother apparatuses 910 in addition to or in lieu of the apparatuses incorporated into theprocessor 973, thememory 972 and/or the input/output device 974. -
FIG. 10 is a cross-sectional side view of anapparatus 1010 that includes amicroelectronic substrate 1040 having aconnection structure 1030 disposed on it in accordance with another embodiment of the invention. In one aspect of this embodiment, themicroelectronic substrate 1040 can have afirst surface 1045 and asecond surface 1046 facing opposite from thefirst surface 1045. Themicroelectronic substrate 1040 can further include activemicroelectronic features 1044 positioned proximate to thesecond surface 1046, and a first bond site 1041 (such as a bond pad), also positioned proximate to thesecond surface 1046. - The
connection structure 1030 can include asecond bond site 1031 spaced apart from thefirst bond site 1041. Thesecond bond site 1031 can include a solder ball pad, and can support aconductive coupler 1029, such as a solder ball. Accordingly, theappuratus 1010 can have a “flip chip” configuration. In other embodiments, thesecond bond site 1031 can have other configurations and can support other types of conductive couplers. In any of these embodiments, theconnection structure 1030 can include an electrically conductive material (such as a metal redistribution layer) and can have afirst surface 1037 facing toward thesecond surface 1046 of themicroelectronic substrate 1040, and asecond surface 1038 facing opposite from thefirst surface 1037. Theconnection structure 1030 can further includeelongated members second bond site 1031. In one aspect of this embodiment, theelongated member 1033 a can be connected between thesecond bond site 1031 of the connection structure and thefirst bond site 1041 of themicroelectronic substrate 1040. Theelongated member 1033 b can have a generally tab-shaped configuration, generally similar to those described above. - In a further aspect of this embodiment, the
apparatus 1010 can include passivation layers 1035 (shown as afirst passivation layer 1035 a and asecond passivation layer 1035 b) positioned between electrically conductive elements of theapparatus 1010 to at least partially isolate these elements from each other. For example, thefirst passivation layer 1035 a can be positioned between the second surface 1046 (including the active microelectronic features 1044) of themicroelectronic substrate 1040, and thefirst surface 1037 of theconnection structure 1030. Thesecond passivation layer 1035 b can be positioned adjacent to thesecond surface 1038 of theconnection structure 1030. In one aspect of this embodiment, thesecond passivation layer 1035 b can perform at least some of the same functions as thecover layer 126 described above reference toFIG. 3C . Accordingly, thesecond passivation layer 1035 b can aid in securing theconnection structure 1030 to themicroelectronic substrate 1044. In one embodiment, thesecond passivation layer 1035 b can extend over the entire lengths of theelongated members second connection site 1031 exposed to receive theconductive coupler 1029. Alternatively, thesecond passivation layer 1035 b can leave portions of theelongated members second bond site 1031 exposed to allow theconductive coupler 1029 to wick along theelongated members FIG. 3C . -
FIG. 11 is a plan view of an embodiment of theapparatus 1010 described above with reference toFIG. 10 . In one aspect of this embodiment, each of theelongated members 1033 a can extend between the correspondingfirst bond site 1041 of themicroelectronic substrate 1040 and the correspondingsecond bond site 1031, and can be generally co-planer with each other. In an alternative embodiment, theelongated members 1033 a can cross over each other, for example, by extending into different planes normal to the plane ofFIG. 11 to avoid electrical contact with the elongated members over which they pass. - In a further aspect of this embodiment, the
apparatus 1010 can include aninactive connection structure 1150 having asecond bond site 1151.Elongated members second bond site 1151, without being electrically connected to themicroelectronic substrate 1040. Accordingly, theinactive connection structures 1150 can support a conductive coupler to provide uniformity with a pre-selected pattern of conductive couplers, in a manner generally similar to that described above. - FIGS. 12A-B illustrate a cross-sectional side view and top isometric view, respectively, of an
apparatus 1210 in accordance with another embodiment of the invention. In one aspect of this embodiment, theapparatus 1210 can include amicroelectronic substrate 1240 having afirst bond site 1241, and aconnection structure 1230 having asecond bond site 1231. Themicroelectronic substrate 1240 can includeactive devices 1244 electrically coupled to thefirst bond site 1241. Theconnection structure 1230 can include a plurality of elongated members 1233 (two are shown in FIGS. 12A-B aselongated members second bond site 1231. In one aspect of this embodiment, theelongated member 1233 a can be coupled between thefirst bond site 1241 and thesecond bond site 1231 and theelongated member 1233 b can include an elongated tab-shaped member generally similar to those described above. Thebond site 1231 can include asupport portion 1280 carrying awettable portion 1281. Thesupport portion 1280 can have a composition generally similar to that of the elongated members 1233 a-1233 b (for example, a composite of aluminum, nickel, copper and titanium), and thewettable portion 1281 can have a different composition (such as a composite of nickel and copper). Accordingly, thewettable portion 1281 can be configured to be wetted by a flowable conductive material (such as solder) to support and electrically couple to aconductive coupler 1229. - In a further aspect of this embodiment, the
apparatus 1210 can include adie passivation layer 1235 positioned between theactive devices 1244 and theconnection structure 1230. Afirst dielectric layer 1236 a can be disposed between thepassivation layer 1235 and theelongated members second dielectric layer 1236 b can be disposed on top of theconnection structure 1230. In one aspect of an embodiment shown inFIGS. 12A and B, theelongated members conductive coupler 1229 because thewettable portion 1281 of thesecond bond site 1231 does not extend over the elongated members. In an alternate embodiment, theelongated members conductive coupler 1229 in a manner generally similar to that described above with reference toFIG. 3C . -
FIG. 13A is a cross-sectional side view of anapparatus 1310 having aconnection structure 1330 in accordance with another embodiment of the invention.FIG. 13B is a top isometric view of a portion of theapparatus 1310 shown inFIG. 13A . Referring first toFIG. 13A , theapparatus 1310 can include amicroelectronic substrate 1340 having afirst bond site 1341, apassivation layer 1335, and afirst dielectric layer 1336 a disposed on thepassivation layer 1335. Theconnection structure 1330 can be disposed on thefirst dielectric layer 1336 a and can include asecond bond site 1331 electrically connected to thefirst bond site 1341 with a connectingtrace 1333. - Referring now to
FIGS. 13A and 13B , thesecond bond site 1331 can include a generally circularfirst portion 1382 positioned on thefirst dielectric layer 1336 a and electrically connected to the connectingtrace 1333. Asecond dielectric layer 1336 b can be disposed on theconnection structure 1330, including thefirst portion 1382 of thesecond bond site 1331. Thesecond bond site 1331 can further include asecond portion 1383 electrically connected to thefirst portion 1382 and having at least twoelongated members second dielectric layer 1336 b. In one aspect of this embodiment, thefirst portion 1382 can include a composite of titanium and either copper or aluminum, and thesecond portion 1383 can include a composite of titanium, copper, and nickel. In other embodiments, these components can include other constituents. In any of these embodiments, theelongated member -
FIG. 14 illustrates a top plan view of asupport member 1420 for supporting a microelectronic substrate in accordance with another embodiment of the invention. In one aspect of this embodiment, thesupport member 1420 can include afirst surface 1421 and asecond surface 1422 facing opposite from thefirst surface 1421. Thesecond surface 1422 can be configured to carry a microelectronic substrate. Thesupport member 1420 can includeconnection structures 1430 for connecting the microelectronic substrate supported on thesupport member 1420 to other electronic or microelectronic devices. In one aspect of this embodiment, eachconnection structure 1430 can include a first bond site (such as a solder pad) described below with reference toFIG. 15 , and asecond bond site 1432, such as a wire bond pad, configured to be electrically coupled to corresponding terminals of the microelectronic substrate. Theconnection structure 1430 can further include electroplating traces 1434 configured to connect to a source of electrical potential for plating theconnection structure 1430, generally in a manner similar to that described above. Alternatively, theconnection structures 1430 can be plated with an electroless process. - The
connection structures 1430 can further include a connectingtrace 1439 that extends outwardly from thesecond bond site 1432. The connectingtrace 1439 can be coupled to a via 1436 that extends from the second surface of thesupport member 1420 to thefirst surface 1421. The via 1436 can be electrically coupled to the first bond site of thesupport member 1420, as described in greater detail below with reference toFIG. 15 . -
FIG. 15 is a bottom plan view of an embodiment of thesupport member 1420 described above with reference toFIG. 14 . As shown inFIG. 15 , each of thevias 1436 of theconnection structures 1430 can extend through thesupport member 1420 to thefirst surface 1421. Each via 1436 can be electrically connected to a corresponding first bond site 1431 (such as a solder ball pad), to provide for electrical communication between thefirst bond site 1431 and the second bond site 1432 (FIG. 14 ) on the opposite side of the support member. Accordingly, eachconnection structure 1430 can include at least twoelongated members first bond site 1431. Theelongated member 1433 b can extend between thefirst bond site 1431 and the via 1436 to provide for electrical communication between these two components of theconnection structure 1430. Theelongated member 1433 a can include a generally tab-shaped structure generally similar to those described above. Accordingly, theelongated members FIGS. 3A-8 . For example, in one aspect of this embodiment, theelongated members first bond site 1431 to thefirst surface 1421 of thesupport member 1420. Thesupport member 1420 can include a cover layer generally similar to that described above with reference toFIG. 3C to aid in attaching theconnection structure 1430 to thefirst surface 1421. Accordingly, the cover layer can be configured to either allow or prevent wicking of a flowable conductive material along theelongated members - From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
Claims (20)
1-61. (canceled)
62. An electronic device, comprising:
a housing;
a microelectronic substrate positioned within the housing;
a support substrate carrying the microelectronic substrate in the housing; and
a connection structure carried by the support substrate, the connection structure having a bond site configured to receive a flowable conductive material, the connection structure further having at least two elongated members, each of which is connected to and extends outwardly from the bond site, each elongated member being configured to receive at least a portion of the flowable conductive material from the bond site, and neither of which is electrically connected to the microelectronic substrate.
63. The device of claim 62 wherein each elongated member is configured to receive at least a portion of the flowable conductive material from the bond site.
64. The device of claim 62 wherein the connection structure is a first connection structure and the elongated members are first elongated members configured to receive at least a portion of the flowable conductive material from the first bond site, and wherein the apparatus further comprises a second connection structure carried by the support substrate, the second connection structure having a second bond site configured to receive a flowable conductive material, the second connection structure having a third bond site electrically coupled to the microelectronic substrate, the second connection structure further having second elongated members extending outwardly from the second bond site, wherein each of the second elongated members is configured to receive at least a portion of the flowable conductive material, and wherein and at least one of the second elongated members extends between the second and third bond sites.
65. The device of claim 62 wherein the elongated members are configured to be wetted by the flowable conductive material when the flowable conductive material is in a flowable state.
66. The device of claim 62 wherein the conductive structure includes two elongated members extending away from opposite sides of the bond site.
67. The device of claim 62 , further comprising a layer disposed on the elongated members and attached to the support substrate, the layer having an aperture aligned with the bond site.
68. The device of claim 62 , further comprising a layer disposed on the elongated members and attached to the support substrate, the layer having an aperture aligned with the bond site, and wherein a covered portion of each elongated member extends between the layer and the support substrate, and an exposed portion of each elongated member is exposed through the aperture, further wherein each exposed portion has approximately the same length.
69. The device of claim 62 wherein the connection structure includes at least one electrically conductive metallic material.
70. The device of claim 62 wherein the bond site includes a solder ball pad, and wherein the apparatus further comprises a solder ball disposed on the solder ball pad.
71. The device of claim 62 wherein at least one of the elongated members has a first end connected to the bond site and a second end spaced apart from the bond site, and wherein the elongated member includes an anchor toward the second end to secure the elongated member to the support substrate.
72. The device of claim 62 wherein the support substrate has a first surface coupled to the microelectronic substrate and a second surface facing opposite from the first surface, the connection structure being disposed on the second surface, and wherein the support substrate includes a slot extending between the first and second surfaces, and wherein the device further comprises wires extending through the slot between the second connection structure and the microelectronic substrate.
73-81. (canceled)
82. An apparatus for supporting a microelectronic substrate, comprising:
a support member having a first surface and a second surface facing opposite from the first surface, the second surface being configured to carry a microelectronic substrate; and
a connection structure carried by the support member, the connection structure including:
first and second bond sites, the first bond site being positioned at least proximate to the first surface of the support member, the second bond site being positioned at least proximate to the second surface of the support member, the second bond site being configured to be electrically coupled to the microelectronic substrate when the support member carries the microelectronic substrate, the first bond site being configured to receive a flowable conductive material; and
at least two elongated members connected to and extending outwardly from the first bond site, at least one of the elongated members being coupled between the first and second bond sites.
83. The apparatus of claim 82 wherein the at least one elongated member includes a first portion in a first plane generally parallel to the first surface, a second portion in a second plane generally parallel to the second surface and spaced apart from the first plane, and a third portion connected between the first and second portions.
84. The apparatus of claim 82 , further comprising a solder ball disposed on the first bond site.
85. The apparatus of claim 82 , further comprising:
a microelectronic substrate carried by the support member; and
a conductive link electrically coupled between the microelectronic substrate and the second bond site.
86. The apparatus of claim 82 , further comprising:
a microelectronic substrate carried by the support member; and
a wire bond electrically coupled between the microelectronic substrate and the second bond site.
87. The apparatus of claim 82 wherein each elongated member is configured to receive at least a portion of a flowable material from the first bond site.
88-124. (canceled)
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US11/172,325 US20050242437A1 (en) | 2001-12-26 | 2005-06-30 | Method and apparatus for supporting microelectronic substrates |
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US10/775,736 Expired - Fee Related US6995026B2 (en) | 2001-12-26 | 2004-02-10 | Methods for coupling a flowable conductive material to microelectronic substrates |
US10/775,703 Expired - Lifetime US6936916B2 (en) | 2001-12-26 | 2004-02-10 | Microelectronic assemblies and electronic devices including connection structures with multiple elongated members |
US11/172,325 Abandoned US20050242437A1 (en) | 2001-12-26 | 2005-06-30 | Method and apparatus for supporting microelectronic substrates |
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US10/775,736 Expired - Fee Related US6995026B2 (en) | 2001-12-26 | 2004-02-10 | Methods for coupling a flowable conductive material to microelectronic substrates |
US10/775,703 Expired - Lifetime US6936916B2 (en) | 2001-12-26 | 2004-02-10 | Microelectronic assemblies and electronic devices including connection structures with multiple elongated members |
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US20150364848A1 (en) * | 2014-06-12 | 2015-12-17 | Palo Alto Research Center Incorporated | Circuit interconnect system and method |
US10038267B2 (en) * | 2014-06-12 | 2018-07-31 | Palo Alto Research Center Incorporated | Circuit interconnect system and method |
US10559522B2 (en) | 2015-12-17 | 2020-02-11 | International Business Machines Corporation | Integrated die paddle structures for bottom terminated components |
US10679926B2 (en) | 2015-12-17 | 2020-06-09 | International Business Machines Corporation | Method of making integrated die paddle structures for bottom terminated components |
Also Published As
Publication number | Publication date |
---|---|
US20040159921A1 (en) | 2004-08-19 |
US6995026B2 (en) | 2006-02-07 |
US6936916B2 (en) | 2005-08-30 |
US20040159946A1 (en) | 2004-08-19 |
US6870276B1 (en) | 2005-03-22 |
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