SG152978A1 - Method for producing a semiconductor wafer with a polished edge - Google Patents

Method for producing a semiconductor wafer with a polished edge

Info

Publication number
SG152978A1
SG152978A1 SG200807234-0A SG2008072340A SG152978A1 SG 152978 A1 SG152978 A1 SG 152978A1 SG 2008072340 A SG2008072340 A SG 2008072340A SG 152978 A1 SG152978 A1 SG 152978A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
producing
polished
edge
polished edge
Prior art date
Application number
SG200807234-0A
Inventor
Klaus Roettger
Werner Aigner
Makoto Tabata
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG152978A1 publication Critical patent/SG152978A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

The invention relates to a method for producing a semiconductor wafer with a polished edge, said method comprising the following steps:a polishing of at least one side of the semiconductor wafer,and a polishing of the edge of the polished semiconductor wafer,wherein the edge is polished in the presence of a polishing agent by means of a polishing cloth containing fixed abrasive.
SG200807234-0A 2007-11-15 2008-09-26 Method for producing a semiconductor wafer with a polished edge SG152978A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007056122A DE102007056122A1 (en) 2007-11-15 2007-11-15 Method for producing a semiconductor wafer with a polished edge

Publications (1)

Publication Number Publication Date
SG152978A1 true SG152978A1 (en) 2009-06-29

Family

ID=40576892

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200807234-0A SG152978A1 (en) 2007-11-15 2008-09-26 Method for producing a semiconductor wafer with a polished edge

Country Status (7)

Country Link
US (1) US20090130960A1 (en)
JP (1) JP2009124153A (en)
KR (1) KR20090050939A (en)
CN (1) CN101434047A (en)
DE (1) DE102007056122A1 (en)
SG (1) SG152978A1 (en)
TW (1) TW200921773A (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010162624A (en) * 2009-01-13 2010-07-29 Ebara Corp Polishing device and method
DE102009030294B4 (en) * 2009-06-24 2013-04-25 Siltronic Ag Process for polishing the edge of a semiconductor wafer
DE102009030295B4 (en) * 2009-06-24 2014-05-08 Siltronic Ag Method for producing a semiconductor wafer
DE102009030292B4 (en) * 2009-06-24 2011-12-01 Siltronic Ag Method for polishing both sides of a semiconductor wafer
DE102009030296B4 (en) * 2009-06-24 2013-05-08 Siltronic Ag Process for producing an epitaxially coated silicon wafer
DE102009051008B4 (en) * 2009-10-28 2013-05-23 Siltronic Ag Method for producing a semiconductor wafer
DE102010014874A1 (en) * 2010-04-14 2011-10-20 Siltronic Ag Method for producing a semiconductor wafer
JP2012009550A (en) * 2010-06-23 2012-01-12 Disco Abrasive Syst Ltd Wafer processing method
JP2012019126A (en) * 2010-07-09 2012-01-26 Disco Abrasive Syst Ltd Wafer processing method
DE102013204839A1 (en) * 2013-03-19 2014-09-25 Siltronic Ag Method of polishing a wafer of semiconductor material
DE102013210057A1 (en) 2013-05-29 2014-12-04 Siltronic Ag Process for polishing the edge of a semiconductor wafer
CN104526493A (en) * 2014-11-18 2015-04-22 天津中环领先材料技术有限公司 Monocrystalline silicon wafer edge polishing technology
CN108214110A (en) * 2016-12-14 2018-06-29 有研半导体材料有限公司 A kind of silicon polished edge processing technology

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3828176B2 (en) 1995-02-28 2006-10-04 コマツ電子金属株式会社 Manufacturing method of semiconductor wafer
TW308561B (en) * 1995-08-24 1997-06-21 Mutsubishi Gum Kk
JP2000077372A (en) * 1998-08-31 2000-03-14 Sumitomo Metal Ind Ltd Manufacture of semiconductor wafer for vapor-phase growth
JP2000114216A (en) * 1998-10-01 2000-04-21 Sumitomo Metal Ind Ltd Manufacture of semiconductor wafer
DE10007390B4 (en) 1999-03-13 2008-11-13 Peter Wolters Gmbh Two-disc polishing machine, in particular for processing semiconductor wafers
US6299514B1 (en) * 1999-03-13 2001-10-09 Peter Wolters Werkzeugmachinen Gmbh Double-disk polishing machine, particularly for tooling semiconductor wafers
US6514423B1 (en) 2000-02-22 2003-02-04 Memc Electronic Materials, Inc. Method for wafer processing
JP2006142388A (en) 2004-11-16 2006-06-08 Nihon Micro Coating Co Ltd Abrasive tape and method

Also Published As

Publication number Publication date
DE102007056122A1 (en) 2009-05-28
TW200921773A (en) 2009-05-16
JP2009124153A (en) 2009-06-04
US20090130960A1 (en) 2009-05-21
KR20090050939A (en) 2009-05-20
CN101434047A (en) 2009-05-20

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