KR20140079294A - Substrate Processing Apparatus - Google Patents

Abstract

The present invention relates to a thin film depositing apparatus and, more specifically, to a thin film depositing apparatus for forming a thin film on a substrate by the evaporation of a depositing material. Disclosed in the present invention is a thin film depositing apparatus including a process chamber; one or more evaporation sources for vaporizing a depositing material and depositing the same onto a substrate carried into the process chamber; and one or more shutters for shutting the depositing material vaporized from the evaporation source. The shutter includes a base portion for depositing the vaporized depositing material; and at least one heat-blocking member placed on the top of the base portion to block radiant heat generated by the evaporation of the depositing material from the evaporation source.

Description

[0001] Substrate Processing Apparatus [0002]

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus for forming a thin film on a substrate by evaporation of a deposition material.

A flat panel display is typically a liquid crystal display, a plasma display panel, or an organic light emitting diode.

Of these, organic light emitting devices have advantages such as fast response speed, lower power consumption than conventional liquid crystal display devices, high brightness and light weight, and the advantage of being able to be made ultra thin by not requiring a separate back light device And has been attracting attention as a next-generation display device.

As a general method of forming a thin film on a substrate of a flat panel display device, there are evaporation, physical vapor deposition (PVD) such as ion plating and sputtering, And chemical vapor deposition (CVD). Among them, a vapor deposition method can be used for forming a thin film such as an organic material layer, an inorganic material layer, etc. of an organic light emitting device.

Among the methods of forming a thin film on the substrate of the flat panel display device, the evaporation deposition method is performed by a thin film deposition apparatus including a process chamber for forming a closed process space and an evaporation source for evaporating the material to be deposited, .

Here, the evaporation source heats the evaporation material contained in the crucible and continuously evaporates the evaporation material to deposit the thin film on the substrate processing surface. In particular, the evaporation source should be continuously heated until evaporation of the evaporation material occurs, until the evaporation material in the crucible is exhausted.

Meanwhile, after the thin film deposition process for the substrate is completed, the thin film deposition apparatus must be replaced with a new substrate, and the evaporation material continuously evaporates in the evaporation source.

Thus, there is a problem that unstable deposition of a deposition material occurs on the substrate after the substrate processing and the substrate to be processed by the continuous evaporation of the evaporation material during the exchange of the substrate after the substrate processing and the substrate to be processed.

Particularly, when a thin film deposition process is performed while rotating a substrate in a process chamber, the substrate rotation is stopped and the substrate is exchanged with a new substrate when the substrate is exchanged. In this case, Unstable deposition of the deposition material on the substrate to be processed may result in substrate failure.

Therefore, in the conventional thin film deposition apparatus, each evaporation source is shielded by a shutter to block evaporation of the evaporation material to the substrate, or to partition the evaporation area in which the substrate is located and the evaporation source, And a shutter that opens and closes the opening of the partition by movement, thereby preventing the evaporation material from evaporating to the substrate.

However, the conventional thin film deposition apparatus has a problem that the shutter for blocking evaporation of the evaporation material is heated by radiating heat from the evaporation source at a high temperature, and the heated shutter again transfers heat to the substrate, thereby causing defective substrate processing .

In addition, due to heat radiation of the evaporation source, the shutter is heated to generate thermal deformation, which may not smoothly block the evaporation material, or may act as a cause of particle generation due to friction with another member during movement. .

On the other hand, in the past, a method of lowering the temperature of the shutter by using cooling water has been proposed in order to prevent the temperature of the shutter from rising, but in this case, the structure of the apparatus for using the cooling water has been added, There is a problem.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin film deposition apparatus capable of effectively reducing heat radiated from an evaporation source by a simple structure of a shutter to minimize thermal deformation.

In order to achieve the above-described object, the present invention provides a process chamber comprising: a process chamber; at least one evaporation source for evaporating a deposition material to deposit a thin film on a substrate carried into the process chamber; A thin film deposition apparatus including at least one shutter for shielding a deposition material evaporated from an evaporation source, the shutter including a base portion on which evaporation material to be evaporated is deposited, an evaporation source for evaporating the evaporation material in the evaporation source, And at least one heat shield member for shielding generated radiant heat.

And a spacing member for separating the base unit and the heat shield member from each other may be disposed between the base unit and the heat shield member.

When a plurality of the heat block members are stacked on the upper portion of the base, spacing members for separating the heat block members from each other may be disposed between the heat block members.

The spacing members may be disposed in different directions from adjacent layers when disposed in multiple layers between the base portion and the heat end member and between the respective heat end members.

At least one surface of each of the spacing members may be welded to the base portion or the heat shield member.

The base may be provided with a rib for preventing thermal deformation by radiant heat generated from the evaporation source.

Each of the heat shield members may be fixed in position by welding each side surface.

The base portion and the at least one heat shield member may be fixed by a fixing member passing through the base portion and the at least one heat shield member.

The shutter may further include a cover portion stacked on top of the uppermost heat shield member.

The base portion and the cover portion can be welded or fixed to the respective side surfaces by the side surface bearing members.

The base portion may be made of any one of Ti, Ta, and Inconel.

Preferably, the heat shield member is made of one of SUS, Ti, tantalum, AlN, PBN, and tungsten.

At least one of the base portion and the heat shield members may be mirror finished to reflect heat at the bottom surface.

The thin film deposition apparatus according to the present invention may further include a cooling unit for cooling the shutter when a deposition process in which a deposition material is deposited on a substrate is performed.

The cooling unit may cool the shutter by a guide member that guides the movement of the shutter or may cool the shutter by any one of contact and radiation when the shutter is in the open position where the shutter does not block the evaporation material .

Wherein the processing chamber is provided with a space dividing section in which the processing space dividing the processing region in which the substrate is placed and the evaporation region in which the evaporation source is installed is formed and an opening through which the processing region and the evaporation region communicate is formed, Can be opened and closed.

The shutter may be moved by at least one of a linear movement and a rotary movement between an overlap position where the opening is opened and an open position where the opening is opened to open and close the opening.

The shutter can open / close the corresponding evaporation source by moving corresponding to each of the evaporation sources.

The shutter may be moved by at least one of a linear movement and a rotary movement between an overlapping position where the evaporation source is overlapped and an open position where the evaporation source is opened to open and close the evaporation source.

The thin film deposition apparatus according to the present invention has an advantage that the thermal deformation due to radiant heat of the evaporation source can be minimized by the shutter being composed of the base and at least one heat shield member laminated on the base.

Further, the thin film deposition apparatus according to the present invention has an advantage that the temperature of the shutter is prevented from rising due to the shutter including the base and at least one heat-generating end member stacked on the base, thereby preventing the temperature rise of the substrate have.

In addition, the thin film deposition apparatus according to the present invention comprises a base and at least one heat terminal member laminated on the base, so that the transfer of the radiant heat of the evaporation source to the upper side is minimized so that a separate cooling means for cooling the shutter is unnecessary Thereby minimizing the manufacturing cost of the thin film deposition apparatus.

Further, the thin film deposition apparatus according to the present invention is composed of a base facing the evaporation source and at least one heat end member stacked on the base, thereby increasing the reaction speed of the shutter for cooling the shutter, There is an advantage that thermal deformation can be minimized by cooling and the transfer of the radiant heat of the evaporation source to the upper side can be minimized.

The thin film deposition apparatus according to the present invention comprises a base facing the evaporation source and at least one heat shield member laminated on the base, and a bottom surface of the base and the heat shield member is subjected to mirror- There is an advantage that the transfer of the radiant heat of the evaporation source to the upper side can be minimized.

1 is a cross-sectional view illustrating a thin film deposition apparatus according to an embodiment of the present invention.
2 is a sectional view showing the shutter shown in Fig.
3 is an exploded perspective view showing the shutter shown in Fig.
4 is a cross-sectional view showing another embodiment of the shutter shown in Fig.
5 is a cross-sectional view illustrating a thin film deposition apparatus according to another embodiment of the present invention.
6 is a plan view showing a shutter and a cooling unit in the thin film deposition apparatus of FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish it, will be described with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. The embodiments are provided so that those skilled in the art can easily carry out the technical idea of the present invention to those skilled in the art.

In the drawings, embodiments of the present invention are not limited to the specific forms shown and are exaggerated for clarity. Although specific terms have been used herein, they are used for the purpose of illustrating the invention and are not used to limit the scope of the invention or the meaning of the claims set forth in the claims.

The expression " and / or " is used herein to mean including at least one of the elements listed before and after. Also, expressions such as " connected " or " coupled " are used to mean either directly connecting to another element or indirectly connecting through another element. The singular forms herein include plural forms unless the context clearly dictates otherwise. Also, the terms "comprises" or "comprising" used in the specification mean the presence or addition of one or more other elements, steps, operations, and elements.

Hereinafter, a thin film deposition apparatus according to the present invention will be described with reference to the accompanying drawings.

The thin film deposition apparatus according to the present invention comprises a process chamber 100 forming a closed process space S as shown in FIG. 1; At least one evaporation source (200) installed in the process chamber (100) to evaporate the evaporation material; And one or more shutters 300 to block evaporation of the evaporation material evaporated in the evaporation source 200 by the movement to the substrate 10.

Here, the substrate 10, which is an object of the substrate processing, forms a thin film by evaporation of a deposition material on a substrate-processed surface such as a liquid crystal display, a plasma display panel, and an organic light emitting diode Any object can be made as long as it can be done.

The substrate 10 may be transported directly into the process chamber 100 or may be transported in a substrate tray (not shown).

In the case of at least one of the transporting process and the process, the substrate 10 faces the upper side of the substrate 10 according to the type of the substrate 10, or is oriented toward the ground, And can be transferred and processed in various forms such as forming a slope.

In the case of at least one of the transporting process and the process, the substrate 10 faces the upper side of the substrate 10 according to the type of the substrate 10, or is oriented toward the ground, And can be transferred and processed in various forms such as forming a slope.

A mask (not shown) having an opening patterned to be deposited in a predetermined pattern on the substrate-processed surface of the substrate 10 may be installed in close contact with the substrate-processed surface according to the type of the substrate process.

The process chamber 100 is configured to form a process space S for performing a substrate process.

For example, the process chamber 100 may include a lid 110 detachably coupled to the chamber body 120 to form a sealed process space S.

The process chamber 100 is provided with an exhaust pipe (not shown) for maintaining and exhausting the pressure in accordance with the substrate processing conditions in the process space S, a member for fixing or guiding the substrate 10, Various members, modules, and the like may be installed.

Also, the process chamber 100 may be formed with one or more gates 101 for the entrance and exit of the substrate 10.

The process chamber 100 may further include a substrate support 400 for supporting the substrate 10 such that the substrate processing surface faces the evaporation source 200.

The substrate supporting unit 400 may be configured to support the substrate 10 such that the substrate processing surface faces the evaporation source 200 to perform the substrate processing.

In particular, the substrate support unit 400 may have various configurations according to the movement of the substrate 10, such as horizontally moving the substrate 10 to perform substrate processing.

The substrate support 400 may be configured to support the substrate 10 and horizontally move the substrate 10 by at least one of a linear movement and a rotation movement with respect to an evaporation source 200 .

For example, the substrate support unit 400 includes a substrate pickup unit 410 for picking up and fixing the substrate 10 and a substrate horizontal movement unit for horizontally moving the substrate pickup unit 410 by horizontally moving the substrate pickup unit 410 Not shown).

It should be understood that the substrate 10 may be fixed within the process chamber 100 and the evaporation source 200 may be moved as will be described later.

In addition, it is needless to say that the substrate 10 can be moved up and down for exchanging substrates, forming optimal process conditions, and the like.

The evaporation source 200 may be installed in the process chamber 100 so as to evaporate the evaporation material.

As shown in FIG. 1, the evaporation source 200 includes an evaporation vessel 210 in which evaporation material is contained; A heating heater 230 installed to surround the outer circumferential surface of the evaporation vessel 210 and heating the evaporation vessel 210 to evaporate the evaporation material contained in the evaporation vessel 210; A storage space is formed to receive the evaporation vessel 210 and the heater 230 and the upper side is opened so that the evaporation material evaporates upward and the heat generated by the heater 230 is prevented from being transmitted to the outside And an end 250.

The evaporation vessel 210 may have various shapes and materials such as a cylindrical shape depending on the type of the evaporation material, such that the evaporation vessel 210 is filled with the evaporation material and evaporated as a vapor by heating the heating heater 230 .

The deposition material may be an organic material, an inorganic material, or a metal material such as aluminum. In the case of a metal material, a heat-resistant material such as a ceramic may be used in consideration of an extremely high heating temperature.

The heating heater 230 is installed to surround the outer circumferential surface of the evaporation vessel 210 and evaporates the evaporation material contained in the evaporation vessel 210 by heating the evaporation vessel 210, And the heat wire may have a wire shape.

The heating heater 230 may be installed at an interval from the outer circumferential surface of the evaporation vessel 210 so as to be heated to a uniform temperature throughout the evaporation vessel 210.

On the other hand, the heating heater 230 adjusts at least one of a voltage and a current supplied by a power source to control the temperature of the evaporation material by controlling the amount of heat generated thereby, so that the evaporation amount of the evaporation material evaporated in the evaporation vessel 210 Respectively.

The heating end portion 250 is formed with a receiving space for receiving the evaporation container 210 and the heating heater 230 so that the evaporation material is opened upward to evaporate upward, As shown in FIG.

Meanwhile, the evaporation source 200 may be arranged in a plurality of types rather than one for performing a uniform deposition process and forming various thin films, and may be arranged in various forms according to the forming conditions of the thin film.

In addition, the evaporation source 200 may be fixed to the substrate 10, or may be movably installed in the process chamber 100 such as a rotational movement, a linear movement, or the like.

The shutter 300 is installed in the process chamber 100 to prevent the evaporation material evaporated in the evaporation source 200 from being evaporated into the substrate 10 due to the movement, Various configurations are possible.

In particular, as shown in FIG. 1, a first opening and closing system for opening and closing the evaporation source 200 installed directly above each evaporation source 200, as shown in FIG. 5, And a second opening / closing system for vertically dividing the processing space S of the processing unit 100 by the space dividing unit 140 and opening and closing the opening 141 formed in the space dividing unit 140.

First, when the evaporation material is shut off by the first opening / closing system, the shutter 300 opens and closes the evaporation source 200 by moving corresponding to the evaporation sources 200, as shown in FIG. 1 Lt; / RTI >

At this time, the shutters 300 may be installed in one or more than one depending on the size of the upper opening of the evaporation vessel 210. Here, when the shutters 300 are composed of a plurality of shutters 300, the evaporation vessel 210 can be opened and closed by various methods such as moving the evaporation vessel 210 on both sides to open and close the evaporation vessel 210.

Specifically, the shutter 300 may be moved horizontally with respect to the evaporation vessel 210, or may be moved in various manners, such as being rotated about the rotation axis 310 as shown in FIG. 1 .

The shutter 300 that opens and closes the evaporation source 200 is configured to open the evaporation source 200 when the thin film deposition process is performed and block the evaporation source 200 when the evaporation material 200 needs to be shut off, .

That is, the shutter 300 is moved by at least one of a linear movement and a rotary movement by a shutter moving part (not shown) between a closure position where the evaporation source 200 is opened and an opening position where the evaporation source 200 is opened Thereby opening and closing the evaporation source 200.

Meanwhile, the shutter 300 is preferably attached to the opening of the evaporation vessel 210, which is intended to prevent the evaporation material evaporated in the evaporation source 200 from being evaporated into the substrate 10, There is a problem of occurrence.

Accordingly, the shutter 300 is installed at an interval of 10 mm to 50 mm from the upper end of the evaporation vessel 210 in order to prevent evaporation of the evaporation material to the substrate 10 and to solve the problem of generation of particles due to friction. .

5, the process chamber 100 includes a processing space S in which the substrate 10 is located and an evaporation source 200 in which the substrate 10 is disposed, And the opening 141 may be opened or closed by one or more shutters 300. The opening 141 may be formed by a plurality of openings 141,

At this time, the shutter 300 is moved by at least one of linear movement and rotational movement between at least one of the opening position for opening the opening 141 and the opening position for opening the opening 141, Can be opened and closed.

5, the shutter 300 may be constructed in a pair on both sides of the opening 141 to open and close the opening 141 by linear movement. Do.

At this time, the linear movement of the shutter 300 can be guided by the guide part 320 installed in the process chamber 100 by driving the linear driving part (not shown).

On the other hand, the shutter 300 is heated by the radiant heat of the evaporation source 300 during the opening and closing of the evaporation source 300, and when the shutter 300 is not sufficiently cooled, thermal deformation may occur and the shutter 300 may be damaged.

The process chamber 100 may further include a cooling unit 500 for cooling the shutter 300.

The cooling unit 500 may have any structure as long as it can cool the shutter 300 such as a cooling plate provided with a refrigerant flow path through which the refrigerant flows.

For example, the cooling unit 500 may be configured to cool the shutter 500 by a guide member (not shown) that guides the movement of the shutter 300 or to open the shutter 500 to an open position where the shutter 300 does not block the evaporation material The shutter 300 may be configured to cool the shutter 300 by either heat transfer or contact.

Further, the cooling unit 500 may be installed inside a shutter 300, which will be described later, such that a coolant flow path through which coolant for cooling flows is provided inside the shutter 300.

1, the cooling unit 500 may be configured to open the shutter 300 so that the shutter 300 can be cooled when the shutter 300 is at the open position where the deposition material is not blocked, And can be installed at a position directly underneath.

5, the cooling unit 500 may be disposed at an open position where the shutter 300 does not block the evaporation material, so that the shutter 300 can be cooled when the shutter 300 is in the open position where the evaporation material is not blocked. It can be installed in the lower part of the vehicle.

5, the cooling unit 500 may be coupled to the guide unit 320 to cool the shutter 300 through the guide unit 320, not shown.

The shutter 300 is heated by the radiant heat of the evaporation source 300 during the opening and closing process of the evaporation source 300 despite the installation of the cooling unit 500, .

Particularly, the shutter 300 needs to be configured so as to minimize the temperature rise and cool more rapidly, regardless of the radiant heat of the evaporation source 300.

Therefore, as shown in FIGS. 2 to 4, the shutter 300 includes a base portion 40; And one or more heat end members (51, 52, 53) stacked on the upper side of the base portion (40).

The base portion 40 is preferably a plate member formed as a bottom surface of the shutter 300.

Considering that the material of the base 40 is the same as that of the heat shield members 51, 52 and 53 described later or is directly exposed to the high temperature evaporation source 300, titanium, tantalum Ta, Inconel, and the like.

Inconel is a heat-resistant alloy mainly composed of nickel and containing 15% of chromium, 6 to 7% of iron, 2.5% of titanium, 1% or less of aluminum, manganese and silicon. Such inconel is good in heat resistance and does not oxidize even in an oxidation stream (oxidation stream) of 900 DEG C or more, and is not immersed in an atmosphere containing sulfur. And many properties such as elongation, tensile strength, yield point and the like do not substantially change up to about 600 ° C. and have excellent mechanical properties.

Meanwhile, the base portion 40 may be formed integrally with at least one of the upper surface and the lower surface, or may be formed with one or more ribs 45 joined by welding or the like for structural reinforcement.

Meanwhile, the base unit 40 is directly exposed to the evaporation source 200 where the evaporation material evaporates, and the evaporation material is evaporated when the evaporation source 200 is covered.

Particularly, since the generation of particles is likely to occur due to the continuous deposition of the evaporation material, the base unit 40 is preferably detachable from the rest of the shutter 300 so that the base unit 40 can be replaced after a preset use period.

The heat block members (51, 52, 53) are a member laminated on at least one side of the base portion (40).

The heat block members (51, 52, 53) may be composed of three members as an example.

The heat block members 51, 52, and 53 may be plate members similar to the base unit 40.

The heat shield members 51, 52 and 53 may have the same or similar materials as those of the base unit 40 described later. Specifically, the heat shield members 51, 52 and 53 may be made of SUS, Ti, tantalum, AlN, PBN or tungsten have.

On the other hand, the heat shield members 51, 52, and 53 are stacked on the upper side of the base unit 40 with an interval therebetween so as to minimize heat transfer between the members, and the temperature of the heat shield member 53 positioned on the uppermost layer The rise can be minimized.

At this time, the shutter 300 is disposed between the base unit 40 and the heat shield members 51, 52, 53 so as to maintain a gap between the base unit 40 and the heat shield members 51, 52, 62, and 63, which are provided to maintain the distance between the upper and lower heat rail members 51, 52, and 53, respectively.

Specifically, the interval holding members 61, 62 and 63 may be installed between the base unit 40 and the heat shield member 51 and between the heat shield members 51, 52 and 53.

The spacing member 60 may be formed in a wire form as shown in FIGS. 2 and 3, and each wire-shaped spacing member 60 may have at least one surface thereof connected to the base portion 40, Can be welded and fixed to the members (51, 52, 53). This is to prevent each of the interval holding members 60 from moving between the base 40 and the lowest heat shield member 51 and between the heat shield members 51, .

When the plurality of heat shield members 51, 52 and 53 are stacked on the upper portion of the base unit 40 as in the embodiment of the present invention, The end members 51, 52, 53 may be arranged in different directions from layer to layer.

For example, the first spacer 61 between the base portion 40 and the first heat end member 51 stacked on the base portion 40 can be disposed along the front-rear direction of the shutter 30, The second spacer 62 between the member 51 and the second heat terminal member 52 may be disposed along the left and right direction of the shutter 30. [ In addition, the third spacer 63 between the second heat terminal member 52 and the third heat terminal member 53 may be arranged along the front-rear direction of the shutter 30 again.

This is because the spacing members 61, 62 and 63 of each layer have the above-described arrangement structure and serve as the heat deformation preventing ribs of the respective heat shield members 51, 52 and 53 so that the heat shield members 51 and 52 53 are also prevented from being thermally deformed by the radiant heat of high temperature generated in the evaporation source 20 to prevent the base portion 40 from warping due to thermal deformation of the heat shield members 51, 52, 53 to be.

In order to prevent the respective heat shield members 51, 52 and 53 from being separated from their original positions on the side surfaces of the heat shield members 51, 52 and 53 in the embodiment of the present invention, 52, and 53, respectively.

It is needless to say that the gap holding members 61, 62 and 63 may be integrally formed with the respective heat shield members 51, 52 and 53.

The shutter 30 including the base portion 40 and the at least one heat shield member 51, 52, 53 laminated on the base portion 40 of the embodiment of the present invention has the same structure as the bolt member And can be fixed in position by the fixing member 70.

This is because when the shutter 30 is continuously used, it is necessary to periodically replace the base portion 40 as the evaporated source material is deposited on the base portion 40. In this case, So that the base portion 40 can be easily replaced.

Another embodiment of the shutter will be described with reference to FIG. 4 is a cross-sectional view of a shutter of another embodiment of the present invention, and is exaggerated for ease of explanation.

The shutter 130 according to another embodiment of the present invention includes a base portion 40 and a cover portion 42 that are spaced apart from each other and at least one heat shield disposed between the base portion 40 and the cover portion 42. [ And may include members 51, 52, Since the shutter 130 has the same configuration as the shutter according to the embodiment except for the cover portion 42, a detailed description will be omitted.

That is, in the shutter 130 according to another embodiment of the present invention, the cover member 42 having the same material as that of the base member 40 is further coupled to the upper end of the uppermost heat shield member 53, The configuration is the same.

The fourth gap retaining member 64 is disposed between the third heat shield member 53 and the cover member 42. The fourth gap retaining member 64 is disposed between the third heat shield member 53 and the cover member 42, And can be disposed in the same direction as the gap holding member 62.

The cover member 170 may be disposed on the side surfaces of the base portion 40 and the cover portion 42 to prevent the evaporation material from being deposited in the space between the base portion 40 and the cover portion 42. The cover member 170 may be a fixing member such as a soldering member or a base portion 40 for welding the base portion 40 and the cover portion 42 and a bolt member for fixing the cover portion 42. [

At least one of the base unit 40 and the heat shield members 51, 52 and 53 has a bottom surface in order to minimize heat transfer considering that the heat of the evaporation source 200 is transferred to the shutter 300 by radiation. It is more preferable to be mirror-finished to reflect heat

Particularly, when the bottom surface of each of the heat block members 51, 52, 53 is mirror-processed so as to reflect heat, heat transfer by radiation by the heat transfer member of the lower layer is minimized, .

100: process chamber 200: evaporation source
300: Shutter

Claims (19)

A thin film deposition apparatus comprising: a process chamber; at least one evaporation source for evaporating a deposition material to deposit a thin film on a substrate to be transferred to the process chamber; and at least one shutter for shielding evaporation material evaporated in the evaporation source,
Wherein the shutter includes a base portion on which evaporated evaporation material is evaporated and at least one heat end portion laminated on the base portion to block radiant heat generated when the evaporation material evaporates in the evaporation source, Device. The method according to claim 1,
And a spacing member for spacing the base unit and the heat-generating end member from each other is disposed between the base unit and the heat-generating end member. The method of claim 2,
Wherein when a plurality of the heat block members are stacked on the upper portion of the base portion, spacing members for separating the heat block members from each other are disposed between the heat block members. The method of claim 3,
Wherein the spacing members are disposed in different directions from adjacent layers when disposed in a plurality of layers between the base and the heat shield members and between the heat shield members. The method of claim 3,
Wherein each of the spacing members is welded to at least one surface of the base portion or the heat shield member. The method according to claim 1,
Wherein the base is provided with a rib for preventing thermal deformation by radiant heat generated from the evaporation source. The method of claim 3,
Wherein each of the heat shield members is welded and fixed at each side thereof. The method according to claim 1,
Wherein the base portion and the at least one heat shield member are fixed by a fixing member passing through the base portion and the at least one heat shield member. The method according to claim 1,
Wherein the shutter further comprises a cover portion stacked on top of the uppermost heat shield member. The method of claim 9,
Wherein the base portion and the cover portion are welded or fixed to each side surface by a side wall member. The method according to claim 1,
Wherein the base portion is made of any one of Ti, Ta, and Inconel. The method according to claim 1,
Wherein the heat block member is made of one of SUS, Ti, tantalum, AlN, PBN, and tungsten. The method according to claim 1,
Wherein at least one of the base portion and the heat shield members is mirror-finished so that the bottom surface reflects heat. The method according to any one of claims 1 to 13,
Further comprising a cooling unit for cooling the shutter when a deposition process is performed in which a deposition material is deposited on the substrate. 15. The method of claim 14,
The cooling unit may cool the shutter by a guide member for guiding movement of the shutter or may cool the shutter by any one of contact and radiation when the shutter is in the open position where the shutter does not block the evaporation material And the thin film deposition apparatus. 16. The method of claim 15,
The process chamber includes:
Wherein the processing space is provided with a space dividing section for dividing a processing region in which the substrate is disposed and an evaporation region in which the evaporation source is installed and an opening through which the processing region and the evaporation region communicate,
Wherein the opening is opened and closed by one or more shutters. 18. The method of claim 16,
Wherein the shutter is moved by at least one of a linear movement and a rotary movement between an overlap position where the opening is opened and an open position where the opening is opened to open and close the opening. 16. The method of claim 15,
Wherein the shutter opens and closes the corresponding evaporation source by moving corresponding to each of the evaporation sources. 19. The method of claim 18,
Wherein the shutter is moved by at least one of a linear movement and a rotary movement between an overlap position where the evaporation source is overlapped and an open position where the evaporation source is opened to open and close the evaporation source.

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