KR101823679B1 - Apparatus and method for deposition - Google Patents

Abstract

A vapor deposition apparatus according to an embodiment includes: a generation unit that generates an intermediate compound using a raw material; A storage unit for collecting and storing the intermediate compound; And a reaction part in which the intermediate compound is introduced to cause a reaction.
A deposition method according to an embodiment includes the steps of: generating an intermediate compound using a raw material; Collecting and storing the intermediate compound; And introducing the intermediate compound into a reaction furnace and reacting with the substrate.

Description

[0001] APPARATUS AND METHOD FOR DEPOSITION [0002]

Embodiments relate to a deposition apparatus and a deposition method.

In general, chemical vapor deposition (CVD) is widely used as a technique for forming various thin films on a substrate or a wafer. The chemical vapor deposition method is a deposition technique involving a chemical reaction, which uses a chemical reaction of a source material to form a semiconductor thin film, an insulating film, and the like on the wafer surface.

Such a chemical vapor deposition method and a vapor deposition apparatus have recently attracted attention as a very important technique among thin film forming techniques due to miniaturization of semiconductor devices and development of high efficiency and high output LED. And is currently being used for depositing various thin films such as a silicon film, an oxide film, a silicon nitride film or a silicon oxynitride film, a tungsten film, and the like on a wafer.

The embodiments are intended to provide a deposition apparatus and a deposition method capable of simplifying the structure of a reactor and capable of forming a high-quality thin film.

A deposition apparatus according to an embodiment includes: a generation unit that generates an intermediate compound using a raw material; A storage unit for collecting and storing the intermediate compound; And a reaction part in which the intermediate compound is introduced to cause a reaction.

A deposition method according to an embodiment includes the steps of: generating an intermediate compound using a raw material; Collecting and storing the intermediate compound; And introducing the intermediate compound into a reaction furnace and reacting with the substrate.

The deposition apparatus according to the embodiment includes an intermediate compound generating section and an intermediate compound storing section. The storage unit may collect and store the intermediate compound generated by the generation unit, and may be supplied to the reaction unit through the control valve.

Since the intermediate compound is supplied to the reaction part, a stable reaction can occur in the reaction part. In addition, radical atoms, which are intermediate compounds, can be stably deposited on the substrate included in the reaction part to form a high-quality thin film. Further, by inducing a stable chemical reaction, the growth rate of the thin film can be increased, and the thin film can be efficiently controlled.

Conventionally, ionization of the source gas occurred in the reaction part, and further ionization activation process was required for such ionization. In this embodiment, since the source gas is decomposed to generate the intermediate compound before the source gas is supplied to the reaction part, the ionization activation process can be omitted. Therefore, a simple design and miniaturization of the reaction part are possible.

1 is a view schematically showing the structure of a deposition apparatus according to an embodiment.
FIG. 2 is an enlarged view of FIG. 1 A. FIG.
Fig. 3 is an enlarged view of Fig. 1B. Fig.
4 is a view schematically showing a structure of a deposition apparatus according to a modification.
5 is a process flow diagram of a deposition method according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under / under" Quot; includes all that is formed directly or through another layer. The criteria for top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic view of a deposition apparatus according to the present embodiment and a detailed view of each constituent part, FIG. 2 is a view showing a generator and a storage unit according to the present embodiment, FIG. 3 is a cross- Fig.

Referring to FIG. 1, the deposition apparatus according to the present embodiment may include a generation unit 100, a storage unit 300, and a reaction unit 500.

Referring to FIG. 2, the generator 100 according to the present embodiment includes an inner container 110 for containing a raw material, an outer container 120 and an inner container 110 surrounding the inner container 110, And may include an upper lid 130 that closes the container 120 and is connected to the first supply line 210.

The inner container 110 may include a raw material. The raw material may include silicon and carbon. Preferably, the raw material may be MTS. The MTS is a compound having the chemical formula CH ₃ SiCl _{3. It} is known that the raw materials of Si and C are decomposed in one molecule and the ratio thereof is 1: 1, which is advantageous for the stoichiometric silicon carbide deposition.

The outer container 120 and the first supply line 210 may include heating units 140 and 230. The heat generating units 140 and 230 may have a wire shape that encloses the outer container 120 and the first supply line 210. For example, the heating units 140 and 230 may include a filament, a coil, or a carbon wire.

The raw material accommodated in the inner container 110 may be heated by the heat generating unit 140. Preferably, the inner vessel 110 can be heated to about 825 DEG C or higher. For example, the raw material may be MTS. The MTS is heated by the heating unit 140 to produce an intermediate compound containing carbon and silicon. The intermediate compound may be a _{CH 3 ·, CH 4, SiCl} 3 · ₂ · or SiCl. The intermediate compound generated in the inner container 110, that is, the generation unit 100, moves to the storage unit 300 through the first supply line 210 connected to the upper cover 130.

The reservoir 300 includes a container 320 for containing the intermediate compound and an upper cover 330 sealing the container 320 and connected to the second supply line 220. The storage unit 300 may collect and store the intermediate compound generated in the generation unit 100. The storage unit 300 and the second supply line 220 may include heating units 240 and 310. The heating units 240 and 310 may have a wire shape to enclose the storage unit 300 and the second supply line 220. For example, the heating units 240 and 310 may include a filament, a coil, or a carbon wire.

The intermediate compound collected and stored in the storage unit 300 can maintain a radical state by maintaining a proper temperature by the heat generating unit 310. [ Preferably, the temperature may be maintained at a pressure of between about 800 [deg.] C and 950 [deg.] C and between about 5 and 30 [deg.] C.

The intermediate compound collected and stored in the storage unit 300 is introduced into the reaction unit 500 through the second supply line 220. The amount of the intermediate compound introduced into the reaction part 500 can be controlled by the control valve 400 included in the second supply line 220.

Since the intermediate compound is supplied to the reaction part 500, a stable reaction can occur in the reaction part 500. In addition, radicals as an intermediate compound are stably deposited on the substrate included in the reaction part 500, so that a high-quality thin film can be formed. Further, by inducing a stable chemical reaction, the growth rate of the thin film can be increased, and the thin film can be efficiently controlled.

Conventionally, ionization of the source gas occurred in the reaction part, and further ionization activation process was required for such ionization. In this embodiment, since the source gas is decomposed to generate the intermediate compound before the source gas is supplied to the reaction part 500, the ionization activation process can be omitted. Therefore, a simple design and miniaturization of the reaction part are possible.

3, the reaction unit 500 may include a chamber 510, a heating element 560, a thermal insulation unit 520, a susceptor 530, and a substrate holder 540 provided in the susceptor. have.

The chamber 510 is formed in a cylindrical or rectangular box shape, and a predetermined space is provided inside the chamber 510 to process the substrate 10. Although not shown in the drawing, a gas discharge portion for discharging gas may be further formed on one side of the chamber 510.

The chamber 510 serves to prevent external inflow of gas and maintain the degree of vacuum. To this end, the chamber 510 may comprise a quartz having high mechanical strength and chemical durability.

Subsequently, a heating element 560 may be provided outside the chamber 510.

The heating element 560 may be a resistive heating element that generates heat when power is applied, and may be disposed at regular intervals to uniformly heat the substrate 10. That is, the heat generating element 560 may have a wire shape in order to arrange the heat generating element 560 in a predetermined shape. For example, the heating element 560 may include a filament, a coil, or a carbon wire.

Then, a thermal insulating unit 520 may be provided in the chamber 510. The insulator unit 520 may serve to preserve heat in the chamber 510. Further, the heat generated in the heat generating element 560 is formed so as to be effectively transmitted to the susceptor 530.

The heat keeping unit 520 is formed of a chemically stable material without causing deformation due to heat generated in the heat generating element 560. For example, the insulating unit 520 may be formed of a nitride ceramic, a carbide ceramic, or a graphite material.

Then, the susceptor 530 is placed on the insulated unit 520.

In the deposition apparatus according to the embodiment, the substrate 10 on which deposits are formed or epitaxial growth is formed is placed on the susceptor 530.

Referring to FIG. 3, such a susceptor 530 may include a susceptor top plate, a susceptor bottom plate, and a susceptor side plate. In addition, the susceptor upper plate and the susceptor lower plate face each other.

The susceptor 530 can be manufactured by positioning the susceptor upper plate and the susceptor lower plate, positioning the susceptor side plates on both sides, and then cementing.

However, the embodiment is not limited to this, and a space for a gas passage can be produced in a susceptor of a rectangular parallelepiped.

A substrate holder 540 capable of fixing the substrate 10, which is an object of deposition, may be positioned on the susceptor lower plate.

A vapor deposition process can be performed while flowing air in a space between the susceptor upper plate and the susceptor lower plate. The susceptor side plate serves to prevent the reaction gas from escaping when the airflow flows inside the susceptor.

The susceptor 530 includes graphite which has high heat resistance and is easy to process so that the susceptor 530 can withstand high temperature conditions. Since such graphite is a porous body, there is a possibility of releasing occlusion gas during the vapor deposition process. Further, there is a problem that the surface of the susceptor 530 changes to silicon carbide due to the reaction of the graphite and the raw material gas, so that the coating of the susceptor 530 may contain silicon carbide.

Fig. 4 schematically shows the structure of a deposition apparatus according to a modified example.

4, not only the second supply line 220 but also the third supply line 270 and the fourth supply line 280 are connected to the storage unit 300 so that the various reactors 600 and 700 are connected to the storage unit 300, The intermediate compound may be added. Therefore, it is possible to rapidly deposit the intermediate compound by collecting and storing the intermediate compound in advance and putting it into a plurality of reaction parts with one raw material device.

Hereinafter, the deposition method according to the embodiment will be described with reference to FIG. For the sake of clarity and conciseness, parts that are the same as or slightly similar to those described above will not be described in detail and will be described in detail in different parts.

5 is a process flow diagram of a deposition method according to an embodiment.

Referring to FIG. 5, the deposition method according to the embodiment includes a step (ST100) of producing an intermediate compound by heating a raw material, a step ST200 of collecting and storing the intermediate compound, and a step of reacting ST300.

In the step of generating the intermediate compound (ST100), an intermediate compound can be produced using the starting material.

In the step ST200 of capturing and storing the intermediate compound, the intermediate compound may be collected and stored.

Next, the reacting step ST300 includes a step of forming a thin film on the substrate 10. The intermediate compound comprises silane, and the substrate 10 may comprise silicon carbide. At this time, the thin film deposited on the substrate 10 may include silicon carbide.

The intermediate compound is generated and stored, and the process of depositing the intermediate compound can be performed separately.

In one example, the source may be MTS, and the MTS may be ionized. Is heated is the MTS CH ₃ -, CH _4, SiCl _3, or SiCl produce _two, and the CH ₃ -, CH _4, may SiCl _3, or SiCl _2, is supplied to the substrate (10). As a result, a thin film can be stably deposited on the substrate 10, and a high-quality thin film can be formed.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (12)

A generating unit for generating an intermediate compound using the raw material;
A storage unit for collecting and storing the intermediate compound;
A first supply line connecting the generator and the storage unit;
A reaction part in which the intermediate compound is introduced to cause a reaction;
A second supply line connecting the storage unit and the reaction unit; And
And a heat generating unit disposed outside the generating unit, the storage unit, the first supply line, and the second supply line,
The heat-
A first heat generating unit disposed outside the generating unit;
A second heating unit disposed outside the storage unit;
A third heat generating unit disposed outside the first supply line; And
And a fourth heat generating portion disposed outside the second supply line,
The first heat generating portion is in the form of a wire that directly contacts the outside of the generating portion and surrounds the outside of the generating portion,
Wherein the second heat generating portion is in the form of a wire that directly contacts the outside of the storage portion and surrounds the outside of the storage portion,
Wherein the third heat generating portion is in the form of a wire that directly contacts the outside of the first supply line and surrounds the outside of the first supply line,
The fourth heat generating portion is in the form of a wire that directly contacts the outside of the second supply line and surrounds the outside of the second supply line
Wherein the generator is heated to 825 DEG C or higher by the first heat generating unit,
Wherein the storage unit is maintained at a temperature of 800 ° C to 950 ° C by the second heating unit. The method of claim 1,
Wherein the raw material comprises silicon and carbon. The method according to claim 1,
Wherein the storage unit maintains a pressure of 5 kPa to 30 kPa. delete The method according to claim 1,
The intermediate compound is _{CH 3 ·, CH 4, SiCl} 3 · or deposition apparatus including a SiCl ₂ ·. The method according to claim 1,
Wherein the intermediate compound is introduced into one or a plurality of reaction parts. The method according to claim 1,
Wherein the amount of the intermediate compound is adjusted by a control valve. Generating an intermediate compound by using a raw material in a production part;
Moving the intermediate compound through a first feed line to a reservoir;
Collecting and storing the intermediate compound in the storage;
Moving the intermediate compound through a second feed line to a reaction zone; And
Wherein the intermediate compound is introduced into the reaction furnace and reacted with the substrate,
Wherein the heat generating unit is disposed outside the generating unit, the storage unit, the first supply line, and the second supply line,
The heat-
A first heat generating unit disposed outside the generating unit;
A second heating unit disposed outside the storage unit;
A third heat generating unit disposed outside the first supply line; And
And a fourth heat generating portion disposed outside the second supply line,
The first heat generating portion is in the form of a wire that directly contacts the outside of the generating portion and surrounds the outside of the generating portion,
Wherein the second heat generating portion is in the form of a wire that directly contacts the outside of the storage portion and surrounds the outside of the storage portion,
Wherein the third heat generating portion is in the form of a wire that directly contacts the outside of the first supply line and surrounds the outside of the first supply line,
Wherein the fourth heating portion is in the form of a wire that directly contacts the outside of the second supply line and surrounds the outside of the second supply line,
In the step of producing the intermediate compound, the generation portion is heated to 825 DEG C or higher by the first heat generating portion,
Wherein in the step of collecting and storing the intermediate compound, the storage part is maintained at a temperature of 800 ° C to 950 ° C by the second heating part. 10. The method of claim 8,
Wherein the source comprises silicon and carbon. delete 9. The method of claim 8,
The intermediate compounds _3-CH, CH _4, SiCl _3, or SiCl deposition methods including a _2,. 9. The method of claim 8,
Wherein the reaction furnace includes one or a plurality of reaction furnaces.

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