KR101594690B1 - Apparatus and Method for Measuring Same Position of 3-dimensional Shape and Film Thickness based Multi-probe - Google Patents
Apparatus and Method for Measuring Same Position of 3-dimensional Shape and Film Thickness based Multi-probe Download PDFInfo
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- KR101594690B1 KR101594690B1 KR1020140120265A KR20140120265A KR101594690B1 KR 101594690 B1 KR101594690 B1 KR 101594690B1 KR 1020140120265 A KR1020140120265 A KR 1020140120265A KR 20140120265 A KR20140120265 A KR 20140120265A KR 101594690 B1 KR101594690 B1 KR 101594690B1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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Abstract
An apparatus and method for measuring a three-dimensional shape and a thin film thickness based on a multi-probe are disclosed. An apparatus for measuring three-dimensional shape and thin film thickness based on a multi-probe includes an ellipsometer for measuring a thickness of a thin film through a thin film thickness measuring probe having a laser emitting unit and a receiving unit arranged at a certain angle; And a microscope disposed in a space between the laser emitting unit and the receiving unit and measuring a three-dimensional shape through a fine shape measuring probe.
Description
The present invention relates to an apparatus and a method for measuring the same position of a three-dimensional shape and a thin film thickness based on a multi-probe. More particularly, the present invention relates to an apparatus and method for measuring a three-dimensional shape and a thin film thickness based on a multi-probe, which can measure a three-dimensional fine shape and a thickness of a thin film.
Recent rapid industrial developments have created micro-machining areas such as MEMS, semiconductors and displays. Instrumentation and analytical studies for verifying products and components in these small-area industrial sites are critical. The existing optical measurement technology is mainly based on the optical measuring instrument and the image processing technology which measure the geometrical phenomenon of the two-dimensional plane. However, it is difficult to analyze complex three-dimensional micro-shapes through such a two-dimensional measurement technique.
In particular, an optical three-dimensional micro-shape measuring technique for evaluating defects on a wafer surface, surface roughness, and the like is attracting attention as an important technique. In addition, in the case of wafers, semiconductor performance can be secured only when the thickness of the surface coating layer is made constant. However, it is not possible to know exactly where the two measured values are measured at the wafer, and to measure the shape and the thickness simultaneously at the same position, it is very difficult to measure the surface shape and the thickness of the coating layer independently it's difficult.
1 is a view showing a conventional alignment method using a wafer reference marker.
Referring to FIG. 1, in order to inspect wafers in the related art, it is possible to perform a desired measurement by moving to a relative position based on an alignment marker manufactured for wafer processing. Accordingly, when it is desired to measure the shape and thickness, two inspection equipments with a precision stage and a measuring instrument are used. Further, a vision camera for recognizing the marker is additionally required.
Further, in order to inspect the wafer, different measuring devices are applied through relative positional movement based on the wafer alignment marker. This requires expensive precision stages, vision cameras to recognize the markers, alignment algorithms to allow alignment and positioning, and many other factors.
However, due to a large number of necessary devices, it is very difficult to measure the same position by introducing the position and posture error when aligning the wafer. Further, there is a disadvantage in that an additional time is required for alignment, thereby increasing the total measurement time. In addition, although alignment markers are necessarily prepared for processing, markers can not be produced when wafers are used for research. Therefore, in the absence of a marker, it is impossible to measure the same position using a conventional wafer inspection apparatus.
SUMMARY OF THE INVENTION The object of the present invention is to provide a method of measuring the thickness of a thin film by combining a microscope capable of measuring a three-dimensional fine shape and an ellipsometer capable of measuring the thickness of the thin film, Dimensional shape and a thin film thickness based on a multi-probe capable of measuring a three-dimensional fine shape.
It is another object of the present invention to provide a microscope capable of measuring a three-dimensional micro-shape and a mechanical arrangement of an ellipsometer capable of measuring a thickness of a thin film, as well as a method of calibrating a position of a measurement probe and correcting measurement data , And a device and method for measuring the same position of a three-dimensional shape and a thin film thickness based on a multi-probe that does not require a marker for wafer alignment.
In one aspect of the present invention, the apparatus for measuring three-dimensional shape and thin film thickness based on a multi-probe comprises a laser emitting unit and a receiving unit arranged at a certain angle, and the thickness of the thin film is measured through a thin film thickness measuring probe Measuring ellipsometry; And a microscope disposed in a space between the laser emitting unit and the receiving unit and measuring a three-dimensional shape through a fine shape measuring probe.
The ellipsometer may acquire a thickness data set by measuring the thickness of the four portions of the three-dimensional shape.
Further comprising a standard specimen in which a reference for alignment of the thin film thickness measuring probe measured from the ellipsometer and a reference for alignment of the fine shape measuring probe measured from the microscope are formed in a concentric shape, The measurement points of the thin film thickness measuring probe and the fine shape measuring probe may be coincident with each other so that the same position measurement can be performed.
Generating a regression plane based on measured data from the microscope to calibrate the measurement data measured from the ellipsometer and the measurement data measured from the microscope; Respectively.
The microscope may be a Confocal Laser Scanning Microscopy (CLSM).
According to another aspect of the present invention, there is provided a method for measuring a three-dimensional shape and a thin film thickness based on a multi-probe, comprising the steps of: measuring a thickness of a thin film through a thin film thickness measuring probe of an ellipsometer; Measuring a three-dimensional shape through a fine-shape measuring probe, the microscope being disposed in a space between the receiving unit and the receiving unit; Correcting positions of the thin film thickness measuring probe and the fine shape measuring probe to obtain respective measurement data at the same position; And correcting the attitude of the obtained two measurement data.
The ellipsometer may acquire a thickness data set by measuring the thickness of the four portions of the three-dimensional shape.
Wherein the step of acquiring the respective measurement data at the same position comprises the steps of aligning the reference for alignment of the thin film thickness measurement probe measured from the ellipsometer and the alignment reference of the fine shape measurement probe measured from the microscope in a concentric form It is possible to measure the same position by matching the measuring points of the thin film thickness measuring probe and the fine shape measuring probe by using the standard specimen.
The step of calibrating the attitude of the measurement data may generate a regression plane based on the measured data from the microscope and fit the measured data from the ellipsometer to the regression plane.
The microscope may be a Confocal Laser Scanning Microscopy (CLSM).
According to the embodiments of the present invention, by combining a microscope capable of measuring a three-dimensional fine shape and an ellipsometer capable of measuring the thickness of a thin film and correcting the two measurement data, It is possible to provide an apparatus and a method for measuring a three-dimensional shape and a thin film thickness based on a multi-probe capable of measuring a dimensional fine shape.
It is another object of the present invention to provide a microscope capable of measuring a three-dimensional micro-shape and a mechanical arrangement of an ellipsometer capable of measuring a thickness of a thin film, as well as a method of calibrating a position of a measurement probe and correcting measurement data , It is possible to provide an apparatus and method for measuring the position of a three-dimensional shape and a thin film thickness based on a multi-probe that does not require a marker for wafer alignment.
1 is a view showing a conventional alignment method using a wafer reference marker.
FIG. 2 is a view showing an apparatus for measuring three-dimensional shape and thin film thickness based on a multi-probe according to an embodiment of the present invention.
3 is a view showing a standard specimen for calibration of a measurement probe position according to an embodiment of the present invention.
4 is a view showing a fine shape and thickness at the same position according to an embodiment of the present invention.
FIG. 5 is a view showing measurement data of thin film thickness measurement using an ellipsometer according to an embodiment of the present invention.
6 is a view showing data obtained by measuring a three-dimensional shape using a microscope according to an embodiment of the present invention.
FIG. 7 is a view showing a result of simultaneous measurement of measurement data of a microscope and an ellipsometer in which the same position is measured according to an embodiment of the present invention.
8 is a diagram illustrating a regression plane generation and ellipsometer data position and orientation correction according to an embodiment of the present invention.
9 is a diagram showing a result of applying a measurement data calibration method according to an embodiment of the present invention.
FIG. 10 is a diagram illustrating experimental results using a measurement data calibration method according to an embodiment of the present invention. Referring to FIG.
FIG. 11 is a flowchart illustrating a method for measuring the same position of a three-dimensional shape and a thin film thickness based on a multi-probe according to an embodiment of the present invention.
12 is a view showing a confocal microscope and an ellipsometer for measuring the same position according to an embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
In the present invention, confocal laser scanning microscopy capable of measuring a three-dimensional fine shape and an ellipsometer capable of measuring a thickness of a thin film are combined and the geometrical relationship between the two measurement data is clarified, Dimensional precise shape of the position and the thickness of the thin film can be measured simultaneously.
FIG. 2 is a view showing an apparatus for measuring three-dimensional shape and thin film thickness based on a multi-probe according to an embodiment of the present invention.
Referring to FIG. 2, a multi-probe-based three-dimensional shape and thin film thickness
The Ellipsometer 210 includes a
Here, the beam spot of the
The
At this time, the
The standard specimen further includes a standard specimen in which the reference for alignment of the thin film thickness measurement probe measured from the ellipsometer and the alignment standard for the fine shape measurement probe measured from the microscope are formed in a concentric shape, So that the measurement points of the thin film thickness measuring probe and the fine shape measuring probe can be coincided with each other to enable the same position measurement.
And generating a regression plane based on data measured from the microscope to calibrate the measurement data measured from the ellipsometer and the measurement data measured from the microscope, It can be fitted to the regression plane.
As described above, in the case of the ellipsometer capable of measuring the thickness of the thin film, the apparatus for measuring the three-dimensional shape and the thin film thickness based on the multi-probe, considering the fact that the laser emitting part and the receiving part are separated from each other by a certain angle, A confocal microscope (CLSM) capable of dimensional fine shape measurement can be deployed. In addition to the mechanical arrangement of the measuring probe, it is necessary to calibrate the probe position and calibrate the measuring data.
3 is a view showing a standard specimen for calibration of a measurement probe position according to an embodiment of the present invention.
As shown in FIG. 3, when two different types of measurement probes are arranged, a high-precision standard specimen of a measurement level or more is necessarily required to match the measurement points. Accordingly, it is possible to propose a standard specimen in which the reference for aligning the thin film thickness measuring probe and the reference for aligning the three-dimensional fine shape measuring probe are concentrically formed.
That is, a standard specimen in which the
For example, standard calibration standards can be used to center two different types of measurement probes, where the beam spot size of the ellipsometer on a wafer or the like is as large as about 2 mm, and the beam spot of the microscope has a fine shape It is possible to physically adjust the position at which the beam spot is formed by measuring the position by moving the position so as to match the concentric circle by making a three-dimensional shape by piercing a hole in the center portion.
Therefore, if the measurement points of two measurement probes are matched by using the standard sample, it is possible to easily measure the same position over a certain level. The process of matching the measurement points of two measurement probes using the standard specimen can be performed by first calibrating the product and calibrating it according to the calibration schedule of the measuring device.
4 is a view showing a fine shape and thickness at the same position according to an embodiment of the present invention.
Referring to FIG. 4, standard specimens can be used for calibrating the measurement probe position, and when the positions of the thin film thickness measurement probe and the fine shape measurement probe are calibrated, the data measured using a confocal microscope and the ellipsometer Can be used to indicate the result of the same position in the measured thickness.
FIG. 5 is a view showing measurement data of thin film thickness measurement using an ellipsometer according to an embodiment of the present invention.
Referring to FIG. 5, when the measurement is generally performed using an ellipsometer, the beam spot of the ellipsometer is larger than the measurement area of the confocal microscope. Since the ellipsometer is subjected to point measurement, it is difficult to clarify the relationship between the film thickness and the shape. Thus,
6 is a view showing data obtained by measuring a three-dimensional shape using a microscope according to an embodiment of the present invention.
Referring to FIG. 6,
FIG. 7 is a view showing a result of simultaneous measurement of measurement data of a microscope and an ellipsometer in which the same position is measured according to an embodiment of the present invention.
As shown in FIG. 7, thin film
8 is a diagram illustrating a regression plane generation and ellipsometer data position and orientation correction according to an embodiment of the present invention.
Referring to FIG. 8, a regression plane is generated based on data measured using a confocal microscope to calibrate the posture of the
9 is a diagram showing a result of applying a measurement data calibration method according to an embodiment of the present invention.
Referring to Fig. 9, the results of calibrating the
FIG. 10 is a diagram illustrating experimental results of applying a measurement data calibration method according to an embodiment of the present invention.
FIG. 11 is a flowchart illustrating a method for measuring the same position of a three-dimensional shape and a thin film thickness based on a multi-probe according to an embodiment of the present invention.
Referring to FIG. 11, the same position measurement method of a three-dimensional shape and a thin film thickness based on a multi-probe can be explained using the apparatus for measuring three-dimensional shape and thin film thickness based on the multi-probe described in FIGS. 2 to 10 have.
In
In this case, the microscope is not limited in its kind but may be a confocal laser scanning microscope (CLSM). In addition, a microscope capable of measuring a three-dimensional shape such as an atomic force microscope (AFM) or a white light microscope .
In step 1120, the position of the thin film thickness measuring probe and the fine shape measuring probe may be calibrated to obtain respective measurement data at the same position.
Here, the step of acquiring the respective measurement data at the same position may include a step of arranging the reference for alignment of the thin film thickness measurement probe measured from the ellipsometer and the alignment reference of the fine shape measurement probe measured from the microscope in a concentric form The measurement of the thin film thickness measurement probe and the measurement of the fine shape measurement probe are made coincident with each other using the standard specimen.
In
Here, the step of calibrating the attitude of the measurement data may generate a regression plane based on the data measured from the microscope, and fit the measured data from the ellipsometer to the regression plane.
12 is a view showing a confocal microscope and an ellipsometer for measuring the same position according to an embodiment of the present invention.
Referring to FIG. 12, a multi-probe-based three-dimensional shape and thickness uniformity measuring apparatus measures the thickness of a thin film through a thin film thickness measuring probe of an ellipsometer and measures the thicknesses of the laser emitting portion and the receiving portion of the ellipsometer A microscope is placed in the interspace, and a three-dimensional shape can be measured through a fine-shape measuring probe.
In this manner, by using the apparatus and method for measuring the position of the three-dimensional shape and thin film thickness based on the multi-probe, which do not require a marker on the measurement target, the probe position is corrected as well as the mechanical arrangement of the measurement probe, Can be calibrated. Therefore, there is no need for a wafer alignment marker, and there is no need for a vision camera, an alignment stage, and a alignment algorithm for recognizing the markers. Therefore, it is possible to measure thickness and three-dimensional fine shape at the same position at a low cost. In addition, it can be used as a measuring instrument for research which is difficult to produce additional markers.
The accuracy and evaluation of lens shape accuracy of the microlens array can be measured by using the apparatus and method for measuring three-dimensional shape and thin film thickness based on the multi-probe, and the surface texture 3D profile and reflection The thickness of the barrier coating can be measured. In addition, it is possible to measure the surface fine pattern and thin film thickness of the semiconductor wafer at the same position, and it can be used in various fields such as LED PSS pattern measurement and LED chip defect detection.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.
Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.
Claims (10)
A microscope disposed in a space between the laser emitting unit and the receiving unit and measuring a three-dimensional shape through a fine shape measuring probe; And
Wherein the reference for alignment of the thin film thickness measuring probe measured from the ellipsometer and the reference for alignment of the fine shape measuring probe measured from the microscope are formed in a concentric shape,
/ RTI >
The same position can be measured by matching the measurement points of the thin film thickness measurement probe and the fine shape measurement probe using the standard sample
And a device for measuring the same position of a three-dimensional shape and a thin film based on a multi-probe.
The ellipsometer
Measuring the thickness of the four portions of the three-dimensional shape to obtain a thickness data set
And a device for measuring the same position of a three-dimensional shape and a thin film based on a multi-probe.
Generating a regression plane based on measured data from the microscope to calibrate the measurement data measured from the ellipsometer and the measurement data measured from the microscope; Fitting
And a device for measuring the same position of a three-dimensional shape and a thin film based on a multi-probe.
The microscope
Confocal Laser Scanning Microscopy (CLSM)
And a device for measuring the same position of a three-dimensional shape and a thin film based on a multi-probe.
Correcting positions of the thin film thickness measuring probe and the fine shape measuring probe to obtain respective measurement data at the same position; And
Correcting the attitude of the obtained two measurement data
A method for measuring the same position of a three-dimensional shape and a thin film thickness based on a multi-probe.
The ellipsometer
Measuring the thickness of the four portions of the three-dimensional shape to obtain a thickness data set
Dimensional shape and thin film thickness based on the multi-probe.
The step of acquiring the respective measurement data at the same position
Using a standard specimen in which a reference for alignment of the thin film thickness measuring probe measured from the ellipsometer and an alignment reference for the fine shape measuring probe measured from the microscope are formed in a concentric shape, It is possible to perform the same position measurement by matching the measurement points of the fine shape measurement probe
Dimensional shape and thin film thickness based on the multi-probe.
The step of calibrating the attitude of the measurement data
Generating a regression plane based on the data measured from the microscope, fitting the measured data from the ellipsometer to the regression plane
Dimensional shape and thin film thickness based on the multi-probe.
The microscope
Confocal Laser Scanning Microscopy (CLSM)
Dimensional shape and thin film thickness based on the multi-probe.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101872434B1 (en) | 2017-02-21 | 2018-06-28 | 나노스코프시스템즈 주식회사 | Apparatus for thickness measurement |
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| JPH06147987A (en) * | 1992-11-05 | 1994-05-27 | Canon Inc | Polarized light analyzing instrument and positional deviation correcting method |
| KR101050518B1 (en) * | 2011-01-17 | 2011-07-20 | 주식회사 퓨쳐싸이언스 | Multi unification measuring and inspection equipment |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06147987A (en) * | 1992-11-05 | 1994-05-27 | Canon Inc | Polarized light analyzing instrument and positional deviation correcting method |
| KR101050518B1 (en) * | 2011-01-17 | 2011-07-20 | 주식회사 퓨쳐싸이언스 | Multi unification measuring and inspection equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101872434B1 (en) | 2017-02-21 | 2018-06-28 | 나노스코프시스템즈 주식회사 | Apparatus for thickness measurement |
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