JPS63238260A - Formation of heat ray reflecting film - Google Patents
Formation of heat ray reflecting filmInfo
- Publication number
- JPS63238260A JPS63238260A JP7272087A JP7272087A JPS63238260A JP S63238260 A JPS63238260 A JP S63238260A JP 7272087 A JP7272087 A JP 7272087A JP 7272087 A JP7272087 A JP 7272087A JP S63238260 A JPS63238260 A JP S63238260A
- Authority
- JP
- Japan
- Prior art keywords
- film
- alnx
- heat ray
- layer
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 47
- 150000002500 ions Chemical class 0.000 claims abstract description 36
- -1 nitrogen ions Chemical class 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000007733 ion plating Methods 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 abstract description 13
- 238000000151 deposition Methods 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 82
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 239000008188 pellet Substances 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000010891 electric arc Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 238000004804 winding Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 208000028659 discharge Diseases 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は太陽光線中に含まれる熱線を効率よく反射する
一方可視光線の透過率が良好で、耐久性に優れたＡｇ膜
の上下をＡ Ｉ ＮＸ膜によりサンドインチ状に挟んだ
３層構成の熱線反射膜の生産性に優れた形成方法に関す
るものである。Detailed Description of the Invention (Industrial Field of Application) The present invention provides an A-type film that efficiently reflects heat rays contained in sunlight, has good visible light transmittance, and is highly durable. The present invention relates to a highly productive method for forming a heat ray reflective film having a three-layer structure sandwiched between INX films in the form of a sandwich.
（従来の技術）
熱線反射膜は、建物、自動車窓などの熱線の透過による
内部温度の上昇を防止し空調の効率を上げる目的でガラ
スまたはフィルム上に形成され使用されている。(Prior Art) A heat ray reflective film is formed on glass or a film and used for the purpose of preventing an increase in internal temperature due to the transmission of heat rays in buildings, automobile windows, etc. and increasing the efficiency of air conditioning.
かかる構成の熱線反射膜のＡｌＮ、膜形成手段としては
、スパッタリング法、ＲＦビイオンプレーティング法主
として用いられている。しかし。Sputtering method and RF bio-ion plating method are mainly used as the AlN film forming method for the heat ray reflective film having such a structure. but.
該スパッタリング法、ＲＦイオンプレーティング法では
生産性に劣り実用上問題となっている。The sputtering method and the RF ion plating method have poor productivity and pose a practical problem.
したがって１本発明の目的は太陽光線中に含まれる熱線
を効率よく反射する一方可視光線の透過率が良好で２耐
久性に優れたＡｇ膜の上下をＡｌＮ、膜によりサンドイ
ンチ状に挟んだ３層構成の熱線反射膜の生産性に優れた
形成方法を提供することにある。Therefore, (1) the purpose of the present invention is to efficiently reflect heat rays contained in sunlight while having good visible light transmittance; (2) sandwich a highly durable Ag film between the top and bottom of the AlN film in a sandwich-like manner; It is an object of the present invention to provide a method for forming a heat ray reflective film having a layered structure with excellent productivity.
（問題点を解決するための手段）
本発明者らは、上記のごとき問題を解決し太陽光線中に
含まれる熱線を効率よく反射する一方可視光綿の透過率
が良好で、耐久性に優れたＡｇ膜の上下をＡ Ｉ ＮＸ
膜によりサンドインチ状に挟んだ３層構成の熱線反射膜
の生産性に優れた形成方法について鋭意研究の結果、第
１層及び第３層のＡ Ｉ Ｎ ｘ膜の形成時にプラズマ
イオン源を用いた反応性イオンプレーティング法により
本発明の目的が達成しうろことを見出し１本発明に到達
した。(Means for Solving the Problems) The present inventors have solved the above-mentioned problems by efficiently reflecting the heat rays contained in sunlight, while having good visible light transmittance and excellent durability. The upper and lower sides of the Ag film were
As a result of extensive research into a highly productive method for forming a three-layer heat-reflecting film sandwiched between two films, a plasma ion source was used to form the first and third A I N x films. The present invention was achieved by discovering that the object of the present invention could be achieved by using a reactive ion plating method.
すなわち１本発明は、透明基体上に、該透明基体面から
数えて第１層としてＡｌＮＸ膜を、第２層としてＡｇ膜
を、第３層としてＡｌＮＸ膜を有する熱線反射膜を形成
する方法において、第１Ｎ及び第３層のＡｌＮ、ｌｉの
形成時にプラズマイオン源を用いて窒素イオンを形成し
、かかるイオン中でＡｌまたはＡｌＮを蒸発させて、Ａ
ｌＮＭ膜を堆積させる反応性イオンプレーティング法に
より、ＡｌＮＸ膜を形成することを特徴とする熱線反射
膜の形成方法を要旨とするものである。That is, 1 the present invention provides a method for forming a heat ray reflective film on a transparent substrate, which has an AlNX film as the first layer, an Ag film as the second layer, and an AlNX film as the third layer, counting from the surface of the transparent substrate. , forming nitrogen ions using a plasma ion source during the formation of the first N and third layers of AlN, li, and evaporating Al or AlN in the ions to form A
The gist of the present invention is a method for forming a heat ray reflective film, which is characterized in that an AlNX film is formed by a reactive ion plating method for depositing an INNM film.
本発明において、透明基体としては、ガラス板プラスチ
ック板９プラスチツクフイルムなどの透明基体があげら
れる。またこのような透明基体に第１層および第３層と
して厚さ１００人〜５０００人のＡｌＮＸ膜、第２Ｎと
して厚さ３０人〜３００人のＡｇ膜からなる多層膜を設
けるものであるが、ＡｌＮＸ膜のＸは０．４以上１以下
であり０．４未満では十分な透明性は得られない。また
該Ｘは真空薄膜形成法および薄膜形成条件により変化す
るものである。In the present invention, transparent substrates include glass plates, plastic plates, 9 plastic films, and the like. Furthermore, such a transparent substrate is provided with a multilayer film consisting of an AlNX film with a thickness of 100 to 5,000 layers as the first and third layers, and an Ag film with a thickness of 30 to 300 layers as the second layer. X of the AlNX film is 0.4 or more and 1 or less, and if it is less than 0.4, sufficient transparency cannot be obtained. Further, the value of X varies depending on the vacuum thin film forming method and thin film forming conditions.
本発明の第１層及び第３層のＡｌＮＫ膜の形成方法は、
プラズマイオン源を用いて窒素イオンを形成し、かかる
イオン中でＡｌまたはＡｌＮを蒸発させて、ＡｌＮイ膜
を堆積させる反応性イオンプレーティング法によるもの
であるが、窒素イオンの形成方法は、プラズマイオン源
に直接窒素ガスおよび／またはヘリウム、アルゴン等の
不活性ガスを導入して窒素イオンおよび／または不活性
ガスイオンを形成しペルジャー内に送り込む方法。The method for forming the first and third layer AlNK films of the present invention is as follows:
The method for forming nitrogen ions is based on the reactive ion plating method, in which nitrogen ions are formed using a plasma ion source, and Al or AlN is evaporated in the ions to deposit an AlN film. A method of directly introducing nitrogen gas and/or an inert gas such as helium or argon into an ion source to form nitrogen ions and/or inert gas ions and sending them into the Pelger.
またはプラズマイオン源にヘリウム、アルゴンなどの不
活性ガスを導入し、不活性ガスイオンを形成し、ペルジ
ャー内で不活性ガスイオン流内の途中で窒素ガスを導入
し窒素イオンを形成する方法等が上げられが、プラズマ
イオン源の寿命が良い点から後者の不活性ガスを用いた
方が好ましい。Alternatively, an inert gas such as helium or argon is introduced into the plasma ion source to form inert gas ions, and nitrogen gas is introduced into the inert gas ion flow in a Pelger to form nitrogen ions. However, it is preferable to use the latter inert gas in view of the long life of the plasma ion source.
またイオン供給方法としては、プラズマイオン源内とペ
ルジャー内とに圧力勾配を持たせた供給方法が優れてい
るが、それに限ったものでない。Further, as an ion supply method, a supply method in which a pressure gradient is created between the inside of the plasma ion source and the inside of the Pelger is excellent, but the method is not limited to this.
プラズマイオン源とは、高密度のイオンを生成さるもの
であるが、このプラズマイオン源としては。A plasma ion source is one that generates high-density ions.
高周波放電型、マイクロ波放電型、多極磁界によりイオ
ンを発生させるパケット型、冷陰極または熱陰極ＰＩＧ
（Ｐｅｎｎｉｎｇ Ｉｏｎｉｚａｔｉｏｎ Ｇａ
ｕｇｅ）型、電子衝撃型、フィラメントを有するアーク
放電によりイオンを発生させるデュオプラズマ型、スパ
ッタリング原理を用いたヒル・ネルソン型のプラズマイ
オン源等が上げられる。High frequency discharge type, microwave discharge type, packet type that generates ions using a multipolar magnetic field, cold cathode or hot cathode PIG
(Penning Ionization Ga
uge) type, electron impact type, duo plasma type in which ions are generated by arc discharge having a filament, and Hill-Nelson type plasma ion source using the sputtering principle.
このようにして得られた窒素イオン中で、電子銃加熱法
、抵抗加熱法、高周波誘導加熱法、アーク放電型加熱法
等により、または母材を陽極としプラズマイオン源より
生成した電子をアーク放電させることによりイオン発生
と母材加熱を兼ね備えた方法によりＡ１またはＡｌＮを
蒸発させ、ＡｌＮＸ膜を透明基体および第２ＮのＡｇ膜
上に堆積させるものであるが、加熱のコントロール、純
度、操作の容易さなどの面から電子銃加熱法が好ましく
、さらに好ましくはイオン発生と母材加熱を兼ね備えた
方法が好ましい。In the nitrogen ions thus obtained, electrons generated by an electron gun heating method, resistance heating method, high frequency induction heating method, arc discharge heating method, etc., or from a plasma ion source using the base material as an anode, are discharged by arc discharge. In this method, A1 or AlN is evaporated by a method that combines ion generation and base material heating, and an AlNX film is deposited on a transparent substrate and a second N Ag film, but heating control, purity, and ease of operation are important. An electron gun heating method is preferred from the viewpoint of reliability, and a method that combines ion generation and base material heating is more preferred.
また第２ＮのＡｇ膜の形成方法としては、蒸着法、また
はアルゴンプラズマを用いたＲＦビイオンプレーティン
グ法プラズマイオン源を用いたイオンプレーティング法
などがあるが、付着強度が優れている点からイオンプレ
ーティング法が好ましい。Ａｇの蒸発方法は、Ａｌまた
はＡｌＮの蒸発方法と同様な方法が使われる。Methods for forming the 2N Ag film include vapor deposition, RF bio-ion plating using argon plasma, and ion plating using a plasma ion source. Ion plating method is preferred. The method for evaporating Ag is similar to the method for evaporating Al or AlN.
この方法を用いれば、従来の方法に比べて数十倍から数
百倍の成膜速度かえられ、生産性の問題点が解決できる
。If this method is used, the film formation speed can be increased by several tens to hundreds of times compared to conventional methods, and the productivity problem can be solved.
また、付着力向上のために、アンカー処理剤の塗布、透
明基体表面の放電処理または化学処理なども同時に行う
ことが可能である。Further, in order to improve adhesion, it is possible to simultaneously apply an anchor treatment agent, and perform electrical discharge treatment or chemical treatment on the surface of the transparent substrate.
（実施例）
次に、実施例をあげて本発明をさらに具体的に説明する
。(Example) Next, the present invention will be described in more detail with reference to Examples.
実施例１ プラズマイオン源内にアルゴンガスを導入して。Example 1 By introducing argon gas into the plasma ion source.
プラズマイオン苑内真空度を３ ’ｌ’ ｏ ｒ ｒに
保ち。Maintain the vacuum level inside the plasma ion garden at 3'l' o r r.
熱陰極にＩＯＡ、１００Ｖ印加し、アルゴンイオンを形
成し、あらかじめポリエチレンテレフタレートフィルム
とＡｌおよびＡｇペレットを各所定の位置にセットし、
ｌＸｌ０−’Ｔｏｒｒまで排気したペルジャー内にアル
ゴンイオンを導入し、アルゴンイオン流内の途中で窒素
ガスを導入する一方、電子銃加熱法によりＡｌ母材を蒸
発させ、厚さ３００人の第１層のＡｌＮ、膜を成膜速度
３゜Ｏ人／Ｓの連続巻き取り方式により形成した。IOA and 100V were applied to the hot cathode to form argon ions, and a polyethylene terephthalate film and Al and Ag pellets were set in advance at predetermined positions.
Argon ions were introduced into a Pel jar that had been evacuated to lXl0-' Torr, and nitrogen gas was introduced midway through the argon ion flow, while the Al base material was evaporated using an electron gun heating method to form the first layer with a thickness of 300 people. A film of AlN was formed using a continuous winding method at a film formation rate of 3°/s.
つぎに同様のプラズマイオン源を用いてペルジャー内に
アルゴンイオンを導入し、電子銃加熱法によりＡｇ母材
を蒸発させ、厚さ１５０人の第２層のＡｇ膜を成膜速度
３００人／Ｓの連続巻き取り方式により第１層上に形成
した。Next, argon ions are introduced into the Pelger using a similar plasma ion source, and the Ag base material is evaporated by an electron gun heating method to form a second layer of Ag film with a thickness of 150 mm at a deposition rate of 300 mm/sec. The film was formed on the first layer using a continuous winding method.
また第３層のＡｌＮＸ膜は第１層と同様の方法で厚さ３
００人で第２層上に形成し、熱線反射膜をポリエチレン
テレフタレートフィルム上形成した。尚、ＡｌＮＸ膜の
ＸはＸ線光電子分光装置の測定により０．７であった・
このようにして得られた熱線反射フィルムの可視光の透
過率（５５０ｎｍ）および熱線の反射率（１５００ｎｍ
）を分光光度計（Ｕ−３４００゜日立製）により測定し
、可視光の透過率７７％。In addition, the third layer AlNX film was formed to a thickness of 3 by the same method as the first layer.
A heat ray reflective film was formed on the polyethylene terephthalate film by 00 people. In addition, the X of the AlNX film was found to be 0.7 as measured by an X-ray photoelectron spectrometer. The visible light transmittance (550 nm) and the heat ray reflectance (1500 nm) of the thus obtained heat ray reflective film were found to be 0.7.
) was measured using a spectrophotometer (U-3400° manufactured by Hitachi), and the transmittance of visible light was 77%.
熱線の反射率９０％という優れた熱線反射フィルムが得
られ、大幅な高速成膜が可能となった。An excellent heat ray reflective film with a heat ray reflectance of 90% was obtained, and it became possible to form a film at a significantly high speed.
実施例２
プラズマイオン源内にアルゴンガスおよび窒素ガス（流
量比；アルゴン：窒素＝３：１０）を導入して、プラズ
マイオン苑内真空度を３Ｔｏ ｒ ｒに保ち、電圧２
ｋ Ｖ、周波数１３．５６ＭＨｚの高周波電界を８００
Ｗ印加し、アルゴン・窒素混合イオンを形成し、あらか
じめポリエチレンテレフタレートフィルムとＡｌＮおよ
びＡｇペレットを各所定の位置にセットし、ｌＸｌ０−
’Ｔｏｒｒまで排気したペルジャー内に導入する一方、
電子銃加熱法によりＡｌＮ母材を蒸発させ、厚さ３００
人の第１ＮのＡ Ｉ Ｎ Ｘ膜を成膜速度３００人／Ｓ
の連続巻き取り方式により形成した。Example 2 Argon gas and nitrogen gas (flow rate ratio: argon:nitrogen = 3:10) were introduced into the plasma ion source, the vacuum level in the plasma ion source was maintained at 3 Torr, and the voltage was set to 2.
k V, high frequency electric field with a frequency of 13.56 MHz at 800
W is applied to form argon/nitrogen mixed ions, a polyethylene terephthalate film, AlN and Ag pellets are set in advance at respective predetermined positions, and lXl0-
While introducing it into the Pelger which was evacuated to 'Torr,
The AlN base material was evaporated by the electron gun heating method to a thickness of 300 mm.
Deposition rate of 1N AINX film by 300 people/s
It was formed using a continuous winding method.
つぎに同様のプラズマイオン源を用いてペルジャー内に
アルゴンイオンを導入し、電子銃加熱法によりＡｇ母材
を蒸発させ、厚さ１５０人の第２層のＡｇ膜を成膜速度
３００人／Ｓの連続巻き取り方式により第１Ｎ上に形成
した。Next, argon ions are introduced into the Pelger using a similar plasma ion source, and the Ag base material is evaporated by an electron gun heating method to form a second layer of Ag film with a thickness of 150 mm at a deposition rate of 300 mm/sec. It was formed on No. 1N by a continuous winding method.
また第３層のＡｌＮＫ膜は第１層と同様の方法で厚さ３
００人で第２層上に形成し、熱線反射膜をポリエチレン
テレフタレートフィルム上形成シた。尚、ＡｌＮＸ膜の
ＸはＸ線光電子分光装置の測定により０．８であった。In addition, the third layer of AlNK film was formed to a thickness of 3 by the same method as the first layer.
A heat ray reflective film was formed on the polyethylene terephthalate film by 00 people. Note that X of the AlNX film was 0.8 as measured by an X-ray photoelectron spectrometer.
このようにして得られた熱線反射フィルムの可視光の透
過率（５５０ｎｍ）および熱線の反射率（１５００ｎｍ
）を分光光度計（Ｕ−３４００゜日立製）により測定し
、可視光の透過率７８％。Visible light transmittance (550 nm) and heat ray reflectance (1500 nm) of the thus obtained heat ray reflective film
) was measured using a spectrophotometer (U-3400° manufactured by Hitachi), and the transmittance of visible light was 78%.
熱線の反射率９０％という優れた熱線反射フィルムが得
られ、大幅な高速成膜が可能となった。An excellent heat ray reflective film with a heat ray reflectance of 90% was obtained, and it became possible to form a film at a significantly high speed.
実施例３ プラズマイオン源内にアルゴンガスを導入して。Example 3 By introducing argon gas into the plasma ion source.
プラズマイオン苑内真空度を３Ｔｏ ｒ ｒに保ち。The vacuum level inside the plasma ion garden is maintained at 3 Torr.
熱陰極にＩＯＡ、１００Ｖ印加し、Ａｌ母材を陽極とし
て、あらかじめポリエチレンテレフタレートフィルムと
ＡｌおよびＡｇペレットを各所定の位置にセットしたペ
ルジャー内にアーク放電を起起こし、Ａｌを蒸発させる
一方、アーク放電流内の途中で窒素ガスを導入し、厚さ
３００人の第１層のＡｌＮに膜を成膜速度３００人／Ｓ
の連続巻き取り方式により形成した。By applying IOA and 100V to the hot cathode, an arc discharge is generated in a Pel jar in which a polyethylene terephthalate film, Al and Ag pellets have been set in advance with the Al base material as an anode, and while Al is evaporated, arc discharge is caused. Nitrogen gas is introduced in the middle of the current to form a film on the first layer of AlN with a thickness of 300 people/s.
It was formed using a continuous winding method.
つぎに同様のプラズマイオン源を用いてペルジャー内に
、Ａｇ母材を陽極としてアーク放電をおこし、Ａｇを蒸
発させ、１５０人の第２層のＡｇ膜を成膜速度３００人
／Ｓの連続巻き取り方式により第１層上に形成した。Next, using the same plasma ion source, an arc discharge was generated in the Pelger using the Ag base material as an anode to evaporate the Ag, and a second layer of Ag film was continuously wound at a deposition rate of 300 people/s. It was formed on the first layer by a cutting method.
また第３層のＡｌＮＸ膜は第１層と同様の方法で厚さ３
００人で第２Ｎ上に形成し、熱線反射膜をポリエチレン
テレフタレートフィルム上形成した。尚、Ａｌ Ｎｘ膜
のＸはＸ線光電子分光装置の測定により０．７であった
。In addition, the third layer AlNX film was formed to a thickness of 3 by the same method as the first layer.
A heat ray reflective film was formed on the polyethylene terephthalate film by 00 people. Note that X of the AlNx film was 0.7 as measured by an X-ray photoelectron spectrometer.
このようにして得られた熱線反射フィルムの可視光の透
過率（５５０ｎｍ）および熱線の反射率（１５００ｎｍ
）を分光光度計（Ｕ−３４００゜日立製）により測定し
、可視光の透過率７８％。Visible light transmittance (550 nm) and heat ray reflectance (1500 nm) of the thus obtained heat ray reflective film
) was measured using a spectrophotometer (U-3400° manufactured by Hitachi), and the transmittance of visible light was 78%.
熱線の反射率９０％という優れた熱線反射フィルムが得
られ、大幅な高速成膜が可能となった。An excellent heat ray reflective film with a heat ray reflectance of 90% was obtained, and it became possible to form a film at a significantly high speed.
比較例１
ポリエチレンテレフタレートフィルムとＡｌおよびＡｇ
ペレットを各所定の位置にセットしたペルジャー内をｌ
Ｘｌ０−５Ｔｏｒｒまで排気した後窒素ガスをＩＸＬＯ
−’Ｔｏｒｒ導入し、高周波プラス？ （１３，５６Ｍ
Ｈｚ、３００Ｗ）を発生させ、電子銃加熱法によりＡｌ
ベレットを加熱蒸発させ、３人／Ｓの成膜速度で第１層
のＡ Ｉ Ｎ ｘ膜を３００人で作成した。室温まで冷
却の後、Ａｒガスを２Ｘ１０−“Ｔｏｒｒ導入し、高周
波プラズマを発生させ、電子銃加熱法によりＡｇペレッ
トを加熱蒸発させて、５人／Ｓの成膜速度で第２ＭのＡ
ｇ膜を膜厚１５０人で形成した。次に第１層のＡｌＮＸ
膜形成方法と同様な方法で第３ＮのＡｌＮＸ膜を３００
人で形成し、熱線反射膜をポリエチレンテレフタレート
フィルム上に形成した。Comparative Example 1 Polyethylene terephthalate film and Al and Ag
Place the pellets in each predetermined position inside the pellet jar.
After exhausting to Xl0-5 Torr, nitrogen gas is
-Introducing Torr and adding high frequency? (13,56M
Hz, 300W) and heat the Al by electron gun heating method.
The pellet was heated and evaporated, and the first layer of A IN x film was formed by 300 people at a film formation rate of 3 people/S. After cooling to room temperature, Ar gas was introduced at 2×10 Torr, high-frequency plasma was generated, and the Ag pellets were heated and evaporated using an electron gun heating method.
A film with a thickness of 150 g was formed. Next, the first layer of AlNX
A 3N AlNX film was formed using the same method as the film formation method.
A heat ray reflective film was formed on a polyethylene terephthalate film by hand.
ＡｌＮＸ膜のＸはＸ線分光装置の測定により０゜５であ
った。The X of the AlNX film was 0°5 as measured by an X-ray spectrometer.
このようにして得られた熱線反射フィルムの可視光の透
過率（５５０ｎｍ）および熱線の反射率（１５００ｎｍ
）を分光光度計（Ｕ−３４００゜日立製）により測定し
、可視光の透過率７５％。Visible light transmittance (550 nm) and heat ray reflectance (1500 nm) of the thus obtained heat ray reflective film
) was measured using a spectrophotometer (U-3400° manufactured by Hitachi), and the transmittance of visible light was 75%.
熱線の反射率９０％という優れた熱線反射フィルムが得
られたが、成膜速度が遅く実用的でない。Although an excellent heat ray reflective film with a heat ray reflectance of 90% was obtained, the film formation rate was slow and impractical.
（発明の効果）
本発明によれば、太陽光線中に含まれる熱線を効率よく
反射する一方可視光線の透過率が良好で耐久性に優れた
Ａｇ膜の上下をＡｌＮＸ膜によりサンドインチ状に挾ん
だ３Ｎ構成の熱線、反射膜の生産性が大幅に改善され、
また大幅なコストダウンが可能である。(Effects of the Invention) According to the present invention, the upper and lower sides of the Ag film, which efficiently reflects heat rays contained in sunlight while having good visible light transmittance and excellent durability, are sandwiched in a sandwich shape by AlNX films. The productivity of the hot wire and reflective film with the solder 3N configuration has been greatly improved.
Also, significant cost reductions are possible.
第１図は本発明の熱線反射膜の断面図である。 （１）透明基体 （２）ＡｌＮ＝膜 （３）Ａｇ膜 （４）ＡｌＮｘ膜 FIG. 1 is a sectional view of the heat ray reflective film of the present invention. (1) Transparent substrate (2) AlN=film (3) Ag film (4) AlNx film
Claims (1)
ｌＮ＿ｘ膜を、第２層としてＡｇ膜を、第３層としてＡ
ｌＮ＿ｘ膜を有する熱線反射膜を形成する方法において
、第１層及び第３層のＡｌＮ＿ｘ膜の形成時にプラズマ
イオン源を用いて窒素イオンを形成し、かかるイオン中
でＡｌまたはＡｌＮを蒸発させて、ＡｌＮ＿ｘ膜を堆積
させる反応性イオンプレーティング法により、ＡｌＮ＿
ｘ膜を形成することを特徴とする熱線反射膜の形成方法
。A as a first layer on a transparent substrate, counting from the surface of the transparent substrate.
The lN_x film is used as the second layer, the Ag film is used as the third layer, and the Ag film is used as the third layer.
In a method for forming a heat ray reflective film having an IN_x film, nitrogen ions are formed using a plasma ion source during the formation of the first and third layer AlN_x films, and Al or AlN is evaporated in the ions, AlN_x film is deposited by reactive ion plating method to deposit AlN_x film.
A method for forming a heat ray reflective film, the method comprising forming an x film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7272087A JPS63238260A (en) | 1987-03-25 | 1987-03-25 | Formation of heat ray reflecting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7272087A JPS63238260A (en) | 1987-03-25 | 1987-03-25 | Formation of heat ray reflecting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63238260A true JPS63238260A (en) | 1988-10-04 |
Family
ID=13497472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7272087A Pending JPS63238260A (en) | 1987-03-25 | 1987-03-25 | Formation of heat ray reflecting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63238260A (en) |
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|---|---|---|---|---|
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