JPH0773969A - Electroluminescence element and its manufacture - Google Patents
Electroluminescence element and its manufactureInfo
- Publication number
- JPH0773969A JPH0773969A JP6012108A JP1210894A JPH0773969A JP H0773969 A JPH0773969 A JP H0773969A JP 6012108 A JP6012108 A JP 6012108A JP 1210894 A JP1210894 A JP 1210894A JP H0773969 A JPH0773969 A JP H0773969A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transparent electrode
- light emitting
- organic light
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 238000005401 electroluminescence Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 28
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 238000002848 electrochemical method Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 43
- 230000005684 electric field Effects 0.000 claims 1
- 230000000379 polymerizing effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- 239000011368 organic material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 238000007740 vapor deposition Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 229910021607 Silver chloride Inorganic materials 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- -1 phenylene vinylene Chemical group 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QZVHYFUVMQIGGM-UHFFFAOYSA-N 2-Hexylthiophene Chemical compound CCCCCCC1=CC=CS1 QZVHYFUVMQIGGM-UHFFFAOYSA-N 0.000 description 1
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は有機物発光層を有する電
界発光素子に係り、詳しくは所定位置にのみ有機物発光
層を形成した電界発光素子とこの電界発光素子を得るた
めの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent device having an organic light emitting layer, and more particularly to an electroluminescent device having an organic light emitting layer formed only at a predetermined position and a manufacturing method for obtaining the electroluminescent device.
【０００２】[0002]
【従来の技術】一般に有機エレクトロルミッネセンス素
子（有機ＥＬ素子）と呼ばれる、有機物による電界発光
素子としては、例えば図１０に示すような構造のものが
従来知られている。図１０において符号１はガラス基板
等の透明基板であり、この透明基板１の上にはＩＴＯ等
の透明電極膜２が設けられている。また、この透明電極
膜２上には発光機能を有する有機物発光層３が設けら
れ、さらにこの有機物発光層３の上には金属電極４が設
けられている。ところで、このような構造の電界発光素
子を作製するには、透明基板１上に必要に応じパターン
形成をして透明電極膜２を形成し、その上に有機物発光
層３を蒸着法や塗布法によって形成し、さらに金属電極
４を蒸着法やスパッタ法によって形成するのが普通であ
る。2. Description of the Related Art As an organic electroluminescence device (organic EL device) generally called an organic electroluminescence device, a structure shown in FIG. 10 has been known. In FIG. 10, reference numeral 1 is a transparent substrate such as a glass substrate, and a transparent electrode film 2 such as ITO is provided on the transparent substrate 1. An organic light emitting layer 3 having a light emitting function is provided on the transparent electrode film 2, and a metal electrode 4 is provided on the organic light emitting layer 3. By the way, in order to manufacture an electroluminescent device having such a structure, a transparent electrode film 2 is formed on the transparent substrate 1 by patterning as required, and an organic light emitting layer 3 is formed thereon by a vapor deposition method or a coating method. The metal electrode 4 is usually formed by the vapor deposition method or the sputtering method.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、前述し
た電界発光素子の製造方法においては、特に有機物発光
層を形成するに際して以下に述べる不都合がある。有機
物発光層については通常蒸着法や塗布法によって作製す
るが、蒸着法で行う場合真空蒸着装置を用いる必要があ
り、しかも全面に均一な膜を形成する必要があることか
ら大きなサイズの素子を作製するには非常に大規模な蒸
着装置が必要になる。したがって、製造設備が大型化す
ることからその設備費用が増大してコストアップを招い
てしまい、また技術的にもきわめて困難性を有したもの
となっている。さらに、蒸着法では有機物発光層を形成
する材料を高温にして蒸発させることから、高温にした
際分解してしまうような材料を用いることができず、使
用する材料に大きな制限が加えられてしまう。However, the above-described method for manufacturing an electroluminescent device has the following disadvantages particularly when the organic light emitting layer is formed. The organic light emitting layer is usually produced by the vapor deposition method or the coating method. However, when the vapor deposition method is used, it is necessary to use a vacuum vapor deposition apparatus, and moreover, it is necessary to form a uniform film on the entire surface, so that a large-sized element is produced. To do so requires a very large-scale vapor deposition device. Therefore, since the manufacturing equipment becomes large, the equipment cost increases, leading to an increase in cost, and it is technically extremely difficult. Further, in the vapor deposition method, since the material forming the organic light emitting layer is heated to a high temperature to evaporate, it is not possible to use a material that decomposes at a high temperature, so that the material to be used is greatly limited. .
【０００４】また、塗布法で行う場合材料を溶媒に溶解
する必要があるが、一般にポリマー系の発光層材料は溶
媒に不溶あるいは難溶のものが多く、やはり使用する材
料に大きな制限が加えられてしまう。さらに、塗布法で
は広い面に薄く、均一に、しかも欠陥のない膜を作製す
るのは技術的にきわめて困難であり、したがって比較的
狭い面にしか適用し得ない。また、このような蒸着法や
塗布法にあっては、いずれも基本的には透明基板の全面
に亘って透明電極膜上に一度に膜を形成する必要がある
が、塗布法で述べたごとく全面に亘って均一でしかも欠
陥のない膜を形成するのはきわめて困難であった。さら
に、透明基板の全面に亘って有機物発光層を形成するの
では、本来必要のない部分、例えば透明電極膜をパター
ン化した場合の非パターン部分の上にも有機物発光層を
形成してしまうこととなり、非パターン部分の上の発光
層が無駄となってしまい、加えて単に不必要なだけでな
く漏れ電流の影響等により不都合が生じてしまう場合に
は、該当する箇所を何らかの手段で除去しなくてはなら
いといった問題がある。Further, when the coating method is used, it is necessary to dissolve the material in a solvent, but in general, many polymer-based light-emitting layer materials are insoluble or hardly soluble in the solvent, and thus the material to be used is also largely limited. Will end up. Further, it is technically extremely difficult to form a thin film uniformly over a wide surface and free of defects by the coating method, and therefore, it can be applied only to a relatively narrow surface. In addition, in any of the vapor deposition method and the coating method, basically, it is necessary to form a film on the transparent electrode film at one time over the entire surface of the transparent substrate, but as described in the coating method, It has been extremely difficult to form a film that is uniform and has no defects over the entire surface. Furthermore, when the organic light emitting layer is formed over the entire surface of the transparent substrate, the organic light emitting layer is formed even on an originally unnecessary portion, for example, a non-patterned portion when the transparent electrode film is patterned. If the light emitting layer on the non-patterned portion is wasted and inconvenience occurs due to the influence of leakage current, etc. in addition to being unnecessary, remove the corresponding portion by some means. There is a problem such as a necessity.
【０００５】本発明は前記事情に鑑みてなされたもの
で、その目的とするところは、比較的簡単な装置と手法
とを採用し、しかも所望する箇所にのみ有機物発光層を
形成し得る電界発光素子の製造方法とこれによって得ら
れる電界発光素子を提供することにある。The present invention has been made in view of the above circumstances, and it is an object of the present invention to employ a relatively simple device and method, and to provide an electroluminescent device capable of forming an organic light emitting layer only at a desired position. An object of the present invention is to provide a device manufacturing method and an electroluminescent device obtained thereby.
【０００６】[0006]
【課題を解決するための手段】本発明における請求項１
記載の電界発光素子では、一方の面に透明電極を有する
透明基板と、該透明基板の透明電極側に設けられかつ前
記透明基板の所定位置を露出させる開口部を有した形状
規制用の絶縁性マスクレジスト層と、該マスクレジスト
層の前記開口部内に電気化学法により形成されてなる有
機物発光層と、該有機物発光層を覆って設けられた背面
電極とを有してなることを前記課題の解決手段とした。
請求項２記載の電界発光素子の製造方法では、一方の面
に透明電極層を有する透明基板の透明電極層上に、該透
明電極層の所定位置を露出させて前記透明基板の透明電
極層側に形状規制用の絶縁性マスクレジスト層を形成
し、次に、電気化学法により前記透明電極層の所定位置
の上に有機物発光層を形成し、その後、該有機物発光層
を覆って背面電極を形成することを前記課題の解決手段
とした。[Means for Solving the Problems] Claim 1 in the present invention
In the electroluminescent element described above, a transparent substrate having a transparent electrode on one surface, and an insulating property for shape regulation having an opening provided on the transparent electrode side of the transparent substrate and exposing a predetermined position of the transparent substrate. A mask resist layer, an organic light emitting layer formed by an electrochemical method in the opening of the mask resist layer, and a back electrode provided so as to cover the organic light emitting layer. It was taken as a solution.
The method of manufacturing an electroluminescent element according to claim 2, wherein a predetermined position of the transparent electrode layer is exposed on a transparent electrode layer of the transparent substrate having a transparent electrode layer on one surface thereof, and the transparent electrode layer side of the transparent substrate is exposed. An insulating mask resist layer for shape regulation is formed on the surface of the transparent electrode layer, an organic light emitting layer is formed on a predetermined position of the transparent electrode layer by an electrochemical method, and then a back electrode is formed by covering the organic light emitting layer. Forming was used as a means for solving the above problems.
【０００７】請求項３記載の電界発光素子の製造方法で
は、一方の面に透明電極層を有する透明基板の透明電極
層上に、該透明電極層の所定位置を露出させて前記透明
基板の透明電極層側に絶縁性のマスクレジスト層を形成
し、次に、該透明電極層を作用極として用い、有機物発
光層を形成するための重合液中にて電解重合することに
より前記透明電極層の所定位置の上に有機物発光層を形
成し、その後、該有機物発光層を覆って背面電極を形成
することを前記課題の解決手段とした。請求項４記載の
電界発光素子の製造方法では、一方の面にストライプ状
に形成された複数列の透明電極を有する透明基板の透明
電極上に、該透明電極の所定位置を露出させて前記透明
基板の透明電極側に絶縁性のマスクレジスト層を形成
し、次に、該透明電極を作用極として用い、有機物発光
層を形成するための重合液中にて電解重合することによ
り前記透明電極の所定位置の上に有機物発光層を形成
し、その後、該有機物発光層を覆って、前記透明電極と
直交するストライプ状に形成された複数列の背面電極を
形成することを前記課題の解決手段とした。According to a third aspect of the present invention, there is provided a method for manufacturing an electroluminescent device, wherein a transparent electrode layer having a transparent electrode layer formed on one surface thereof is exposed on a transparent electrode layer at a predetermined position to make the transparent substrate transparent. An insulating mask resist layer is formed on the electrode layer side, and then the transparent electrode layer is used as a working electrode, and the transparent electrode layer is formed by electrolytic polymerization in a polymerization liquid for forming an organic light emitting layer. The organic light emitting layer is formed on a predetermined position, and then the back electrode is formed so as to cover the organic light emitting layer. 5. The method for manufacturing an electroluminescent device according to claim 4, wherein a predetermined position of the transparent electrode is exposed on a transparent electrode of a transparent substrate having a plurality of rows of transparent electrodes formed in stripes on one surface. An insulating mask resist layer is formed on the transparent electrode side of the substrate, and then the transparent electrode is electropolymerized in a polymerization liquid for forming an organic light emitting layer by using the transparent electrode as a working electrode. Forming an organic light-emitting layer on a predetermined position, and then covering the organic light-emitting layer to form a plurality of rows of back electrodes formed in stripes orthogonal to the transparent electrode. did.
【０００８】以下、本発明の製造方法を詳しく説明す
る。なお、ここでは、本発明の製造方法をマトリックス
表示パネルに用いられる電界発光素子の製造方法に適用
した例について述べる。まず、図１に示すように透明基
板１０を用意し、この透明基板１０の一方の面上に蒸着
法やスパッタ法等によってＩＴＯ等の材料からなる透明
電極膜１１を形成する。ここで、透明基板１０としては
ガラス、プラスチック等の材料からなるものが用いられ
る。次に、得られた透明電極層１１をフォトリソグラフ
ィーによって図２に示すようなストライプ状にパターン
形成し、透明電極１１ａ…を得る。The manufacturing method of the present invention will be described in detail below. Here, an example in which the manufacturing method of the present invention is applied to a manufacturing method of an electroluminescent element used for a matrix display panel will be described. First, a transparent substrate 10 is prepared as shown in FIG. 1, and a transparent electrode film 11 made of a material such as ITO is formed on one surface of the transparent substrate 10 by a vapor deposition method, a sputtering method, or the like. Here, as the transparent substrate 10, one made of a material such as glass or plastic is used. Next, the obtained transparent electrode layer 11 is patterned into a stripe shape as shown in FIG. 2 by photolithography to obtain transparent electrodes 11a.
【０００９】次いで、透明基板１０の透明電極１１ａ…
を形成した側に、印刷法、塗布法（スピンコート法、ロ
ールコート法）、ラミネート法等によって図３に示すよ
うに絶縁性のマスクレジスト層１２を形成する。さら
に、フォトリソグラフィーによって図４に示すように、
透明電極１１ａ…の所定位置が露出するよう透明電極１
１ａ…上に所定間隔をあけて孔部（開口部）１３…を形
成する。また、これと同時に、透明基板１０の一端部の
マスクレジスト層１２を除去し、電極取出部１４（図５
参照）を形成する。次いで、図５に示すように透明電極
１１ａ…を作用極として用い、有機物発光層を形成する
ための重合液中にて電解重合することにより、図６に示
すように孔部１３…内にそれぞれ有機物発光層１５を形
成する。Next, the transparent electrodes 11a of the transparent substrate 10 ...
An insulating mask resist layer 12 as shown in FIG. 3 is formed on the side on which the film has been formed by a printing method, a coating method (spin coating method, roll coating method), a laminating method, or the like. Further, as shown in FIG. 4 by photolithography,
The transparent electrode 1 so that a predetermined position of the transparent electrode 11a is exposed.
Holes (openings) 13 ... Are formed on the 1a. At the same time, the mask resist layer 12 at one end of the transparent substrate 10 is removed, and the electrode extraction portion 14 (see FIG.
). Next, as shown in FIG. 5, the transparent electrodes 11a ... Are used as working electrodes, and electrolytic polymerization is performed in a polymerization liquid for forming an organic light emitting layer. As a result, as shown in FIG. The organic light emitting layer 15 is formed.
【００１０】電解重合は、図５に示したように重合液１
６を満たした重合槽１７内で行う。重合液１６は、有機
物発光層１５を形成するためのもので、水、プロピレン
カーボネイト、アセトニトリル、ジメチルスルホキシ
ド、ジメチルホルムアミド、スルホラン等の溶媒に導電
性高分子材料を形成するためのモノマと、色素及び電解
質とを溶解してなるものである。モノマとして具体的に
は、３−ｎ−ヘキシルチオフェン等のアルキルチオフェ
ン、フェニレンビニレン、チエニレンビニレン、ピロー
ル、アニリン、フルオレン等の導電性高分子材料及びそ
の誘導体の一種または複数種が用いられ、色素としては
クマリン系、ペリレン系、オキサゾール系、オキサジン
系、ナフタレン系、キノロン系等の蛍光色素及びその誘
導体、さらにはカチオン系、アニオン系の色素の一種ま
たは複数種が用いられ、また電解質としては適宜な塩、
酸、塩基の一種あるいは複数種が用いられる。The electrolytic polymerization is carried out by using the polymerization solution 1 as shown in FIG.
Polymerization tank 17 filled with 6 is used. The polymerization liquid 16 is for forming the organic light emitting layer 15, and includes a monomer for forming a conductive polymer material in a solvent such as water, propylene carbonate, acetonitrile, dimethylsulfoxide, dimethylformamide, sulfolane, a dye, and It is formed by dissolving an electrolyte. Specific examples of the monomer include one or more of conductive polymer materials such as alkylthiophene such as 3-n-hexylthiophene, phenylene vinylene, thienylene vinylene, pyrrole, aniline, and fluorene, and derivatives thereof, and a dye. As the coumarin-based, perylene-based, oxazole-based, oxazine-based, naphthalene-based, quinolone-based fluorescent dyes and derivatives thereof, one or more kinds of cation-based, anion-based dyes are used, and the electrolyte is appropriately used. Fresh salt,
One or more of acids and bases are used.
【００１１】そして、このような重合液１６中にて電解
重合を行うには、まず孔部１３…を形成した透明基板１
０を、その電極取出部１４に露出した透明電極１１ａ…
を電源１８に接続して重合液１６中に浸漬し、さらに電
源１８に接続した対極１９、参照極２０を重合液１６中
にそれぞれ浸漬する。なお、電極取出部１４については
重合液１６中に浸漬しないようにするのはもちろんであ
る。次いで、電源１８をオンして透明基板１０の作用極
として機能する透明電極１１ａ…と対極１９間に所定の
電圧を印加することにより、孔部１３…内の透明電極１
１ａ…上にそれぞれ重合膜を析出し、図６に示すように
有機物発光層１５…を形成する。In order to carry out electrolytic polymerization in such a polymerization solution 16, first, the transparent substrate 1 having the holes 13 ...
0 is the transparent electrode 11a exposed in the electrode extraction portion 14 ...
Is connected to the power source 18 and immersed in the polymerization liquid 16, and the counter electrode 19 and the reference electrode 20 connected to the power source 18 are immersed in the polymerization liquid 16. Of course, the electrode take-out portion 14 is not soaked in the polymerization liquid 16. Next, the power source 18 is turned on to apply a predetermined voltage between the transparent electrode 11a functioning as the working electrode of the transparent substrate 10 and the counter electrode 19, whereby the transparent electrode 1 in the holes 13 ...
A polymer film is deposited on each of the layers 1a to form organic light emitting layers 15 as shown in FIG.
【００１２】そして、このように有機物発光層１５を形
成した後、重合液１６から透明基板１０を取り出して洗
浄・乾燥を行い、さらに図７に示すように透明電極１１
ａ…と直交し、かつ有機物発光層１５…を覆うようにし
てストライプ状の金属電極（背面電極）２１…を形成す
ることにより、電界発光素子を得る。金属電極２１…の
形成については、蒸着法、スパッタ法等によって金属層
を形成した後、エッチングにより一部を除去してストラ
イプ状にするといった手法が採られる。ここで、金属層
を形成する金属材料としては、Ｉｎ、Ｍｇ、Ｃａ等の仕
事関数の低い、すなわち電子注入性の高い金属が好適に
用いられる。このような金属を背面電極とすることによ
り、各電極（透明電極１１ａ…、金属電極２１…）から
のキャリア（ホール、電子）の注入および有機物発光層
１５内での再結合が効率よく行われ、結果として得られ
た電界発光素子は発光性能の高いものとなる。After the organic light emitting layer 15 is formed in this way, the transparent substrate 10 is taken out from the polymerization solution 16 and washed and dried. Further, as shown in FIG.
A striped metal electrode (back electrode) 21 is formed so as to be orthogonal to a and cover the organic light emitting layers 15 to obtain an electroluminescent element. For forming the metal electrodes 21 ..., a method of forming a metal layer by a vapor deposition method, a sputtering method or the like, and then removing a part thereof by etching to form a stripe shape is adopted. Here, as the metal material forming the metal layer, a metal having a low work function, that is, a high electron injecting property, such as In, Mg, or Ca, is preferably used. By using such a metal as the back electrode, carriers (holes, electrons) are injected from each electrode (transparent electrode 11a ..., Metal electrode 21 ...) And recombination in the organic light emitting layer 15 is efficiently performed. The resulting electroluminescent device has high light emitting performance.
【００１３】なお、前記例では本発明の方法をマトリッ
クス表示パネルに用いられる電界発光素子の製造方法に
適用したが、本発明はこれに限定されることなく、例え
ば薄型バックライトとして用いられる発光素子の製造方
法にも適用可能であり、その場合には透明電極、金属電
極のいずれか一方あるいは両方をストライプ状でなく単
に面状に形成するといった手法を採ればよい。Although the method of the present invention is applied to the method of manufacturing an electroluminescent device used in a matrix display panel in the above example, the present invention is not limited to this, and the light emitting device is used as a thin backlight, for example. Can be applied to the above manufacturing method, and in that case, a method of forming one or both of the transparent electrode and the metal electrode in a planar shape instead of a stripe shape may be adopted.
【００１４】また、前記例では有機物発光層の形成にお
いて電気化学法として電解重合法を採用したが、本発明
はこれに限定されることなく、他の電気化学法、例えば
電解合成法や電着塗装法、電気泳動法等の手法を採用す
ることもできる。さらに、前記例では有機物発光層を一
層とする構造の発光素子の製造方法を説明したが、例え
ば図８に示すように正孔輸送層２２と電子輸送層２３と
から有機物発光層が形成される、いわゆるシングルヘテ
ロ構造（正孔輸送層あるいは電子輸送層のいずれか一方
を発光層とする）の発光素子の製造方法にも適用でき、
さらに図９に示すように正孔輸送層２４と発光層２５と
電子輸送層２６とから有機物発光層が形成される、いわ
ゆるダブルヘテロ構造の発光素子の製造方法にも適用で
きる。In the above example, the electrolytic polymerization method was adopted as the electrochemical method in the formation of the organic light emitting layer, but the present invention is not limited to this, and other electrochemical methods such as electrolytic synthesis method and electrodeposition method are used. A method such as a coating method or an electrophoresis method can also be adopted. Furthermore, in the above example, the method for manufacturing a light emitting device having a structure having one organic light emitting layer has been described. For example, as shown in FIG. 8, the organic light emitting layer is formed from the hole transport layer 22 and the electron transport layer 23. Can be applied to a method for manufacturing a light emitting device having a so-called single hetero structure (wherein either the hole transport layer or the electron transport layer is used as the light emitting layer),
Further, as shown in FIG. 9, it can be applied to a method of manufacturing a light emitting device having a so-called double hetero structure, in which an organic light emitting layer is formed from a hole transport layer 24, a light emitting layer 25, and an electron transport layer 26.
【００１５】[0015]
【作用】請求項１記載の電界発光素子によれば、有機物
発光層が電気化学法により形成されたものであるから、
その形成に際して例えば蒸着法を採用した場合のように
大型の製造設備が必要となることなく、比較的簡易な装
置によりその形成が可能になる。請求項２記載の電界発
光素子の製造方法によれば、透明電極層の所定位置を露
出させてマスクレジスト層を形成し、この露出させた箇
所に有機物発光層を形成するようにしたことから、無駄
なく、所望する箇所にのみ有機物発光層が形成される。According to the electroluminescent element of claim 1, since the organic light emitting layer is formed by the electrochemical method,
When forming the structure, it is possible to form the structure using a relatively simple device without requiring a large-scale manufacturing facility as in the case of adopting a vapor deposition method. According to the method of manufacturing an electroluminescent element of claim 2, a predetermined position of the transparent electrode layer is exposed to form a mask resist layer, and the organic light emitting layer is formed at the exposed portion. The organic light emitting layer is formed only in a desired portion without waste.
【００１６】請求項３記載の電界発光素子の製造方法に
よれば、有機物発光層の作製を電解重合法によって行う
ことから、比較的簡易な装置の使用により有機物発光層
の作製が可能になる。請求項４記載の電界発光素子の製
造方法によれば、透明電極、背面電極をストライプ状に
形成してその交点となる部分に有機物発光層を形成した
ことから、これら交点となる部分を例えば等間隔にする
ことによってドット表示用の発光素子の製造が可能にな
る。According to the method of manufacturing an electroluminescent device according to claim 3, since the organic light emitting layer is manufactured by the electrolytic polymerization method, the organic light emitting layer can be manufactured by using a relatively simple apparatus. According to the method of manufacturing an electroluminescent element of claim 4, since the transparent electrode and the back electrode are formed in a stripe shape and the organic light emitting layer is formed at the intersection point, the intersection point is formed, for example. The spacing makes it possible to manufacture a light emitting device for dot display.
【００１７】[0017]
【実施例】以下、本発明を実施例によりさらに具体的に
説明する。シート抵抗６０Ω／ｃｍ2のＩＴＯからなる
透明電極膜が設けられたガラス基板（寸法；１５ｍｍ×
７５ｍｍ、厚さ０．７ｍｍ）［ジオマテック社製］を用
意し、その透明電極膜をフォトリソグラフィー法により
ストライプ状にパターン形成して透明電極を形成した。
次に、図３、図４に示したごとくマスクレジスト層を形
成し、さらに透明電極が露出するようにして電極取出部
と直径１ｍｍの円形の孔部とをフォトリソグラフィー法
によりそれぞれ所定位置に形成した。そして、得られた
透明基板を、イソプロパノールと水とを容量比で１：１
に混合調製した混合液中で１５分間超音波洗浄し、さら
にアセトン中に浸漬して洗浄した後、デシケータ中にて
真空乾燥を行った。EXAMPLES The present invention will be described in more detail below with reference to examples. A glass substrate provided with a transparent electrode film made of ITO having a sheet resistance of 60 Ω / cm 2 (size: 15 mm ×
75 mm, thickness 0.7 mm) [manufactured by Geomatec Co., Ltd.] was prepared, and the transparent electrode film was formed into a stripe pattern by photolithography to form a transparent electrode.
Next, a mask resist layer is formed as shown in FIGS. 3 and 4, and an electrode extraction portion and a circular hole portion having a diameter of 1 mm are formed at predetermined positions by photolithography so that the transparent electrode is exposed. did. Then, the obtained transparent substrate was mixed with isopropanol and water in a volume ratio of 1: 1.
Ultrasonic cleaning was performed for 15 minutes in the mixed solution prepared by mixing with, and further, after immersion in acetone for cleaning, vacuum drying was performed in a desiccator.
【００１８】またこれとは別に、モノマとして３−ｎ−
ヘキシルチオフェンを０．１ｍｏｌ／ｌ、支持塩として
過塩素酸ナトリウムを０．１ｍｏｌ／ｌの濃度となるよ
うそれぞれ定量溶解した炭酸プロピレン溶液１０ｍｌを
用意し、これをガラス製容器に入れた。そして、このガ
ラス製容器に対極として白金電極を入れ、さらに参照極
として塩橋を介してＡｇ／ＡｇＣｌ電極を接続して電解
重合用セルとした。そしてさらに、先に用意した透明基
板をその電極取出部が残るようにして重合液中に浸漬
し、電極取付部に露出した透明電極、前記対極、参照極
をそれぞれポテンショスタット（コントロール電源）、
クーロンメータ（電気量測定機）に接続した。なお、ポ
テンショスタットとしては北斗電工社製のＨＡ−５０１
Ｇを、クーロンメータとしては同じく北斗電工社製のＨ
Ｆ−２０３Ｄをそれぞれ用いた。Separately from this, 3-n-as a monomer.
10 ml of a propylene carbonate solution in which hexylthiophene was dissolved at a constant concentration of 0.1 mol / l and sodium perchlorate as a supporting salt to a concentration of 0.1 mol / l was prepared, and this was placed in a glass container. Then, a platinum electrode was placed as a counter electrode in this glass container, and an Ag / AgCl electrode was connected as a reference electrode via a salt bridge to obtain a cell for electrolytic polymerization. And further, the transparent substrate prepared previously is immersed in a polymerization solution so that the electrode extraction part remains, and the transparent electrode exposed at the electrode attachment part, the counter electrode, and the reference electrode are respectively potentiostats (control power supply),
It was connected to a coulomb meter (electric quantity meter). As a potentiostat, HA-501 manufactured by Hokuto Denko KK
G is a coulomb meter H also manufactured by Hokuto Denko.
F-203D was used respectively.
【００１９】次に、この状態でＡｇ／ＡｇＣｌ参照極に
対して１．４５Ｖの電圧を透明基板の透明電極に印加
し、電気量４．５ｍＣ／ｃｍ2の電流を流すことによっ
て透明基板の孔部内に厚さ約０．２μｍのポリ（３−ｎ
−ヘキシルチオフェン）［有機物発光層］を形成した。
次いで、前記配線の状態のままで、Ａｇ／ＡｇＣｌ参照
極に対して−０．５Ｖの電圧を透明基板の透明電極に１
０分間印加し、前記ポリ（３−ｎ−ヘキシルチオフェ
ン）膜中のアニオンの脱ドープを行った。そして、この
透明基板を重合液中から取り出してエタノール中で十分
洗浄し、さらにデシケータ中にて真空乾燥を行った。Then, in this state, a voltage of 1.45 V is applied to the transparent electrode of the transparent substrate with respect to the Ag / AgCl reference electrode, and a current of 4.5 mC / cm 2 is supplied to the transparent electrode of the transparent substrate to make holes The thickness of poly (3-n) is about 0.2μm.
-Hexylthiophene) [organic light emitting layer] was formed.
Then, with the wiring as it is, a voltage of −0.5 V is applied to the transparent electrode of the transparent substrate with respect to the Ag / AgCl reference electrode.
The voltage was applied for 0 minutes to dedope the anions in the poly (3-n-hexylthiophene) film. Then, this transparent substrate was taken out of the polymerization solution, thoroughly washed in ethanol, and further vacuum dried in a desiccator.
【００２０】次いで、この透明基板に、その電極取出部
を覆ってアルミ箔のマスクを設け、さらにこれを市販の
真空蒸着装置の基板ホルダーに固定した。また、これと
は別に、モリブデン製抵抗加熱ボートにインジウムを３
ｇ入れてこれを真空蒸着装置に取り付けた。そして、真
空蒸着装置の真空槽を２×１０-5torrまで減圧し、前記
加熱ボードに通電してインジウムを蒸発させ、透明基板
のポリ（３−ｎ−ヘキシルチオフェン）膜上、及びマス
クレジスト層上にインジウム膜を蒸着してこれを対向電
極（背面電極）とし、本発明による電界発光素子を得
た。Next, an aluminum foil mask was provided on the transparent substrate so as to cover the electrode extraction portion, and the mask was fixed to a substrate holder of a commercially available vacuum vapor deposition apparatus. Separately, indium was added to the resistance heating boat made of molybdenum.
g was put and this was attached to the vacuum evaporation apparatus. Then, the vacuum tank of the vacuum vapor deposition apparatus is decompressed to 2 × 10 −5 torr, the heating board is energized to evaporate indium, and the poly (3-n-hexylthiophene) film on the transparent substrate and the mask resist layer. An indium film was vapor-deposited on this and used as a counter electrode (back electrode) to obtain an electroluminescent device according to the present invention.
【００２１】得られた発光素子を用い、そのＩＴＯ電極
を正極、インジウム膜からなる対向電極を負極として直
流２５Ｖを印加したところ、電流密度３５ｍＡ／ｃｍ2
の電流が流れ、橙色の発光が認められた。Using the obtained light emitting device, a direct current of 25 V was applied with the ITO electrode as a positive electrode and the counter electrode made of an indium film as a negative electrode, and a current density of 35 mA / cm 2 was obtained.
Current flowed, and orange light emission was observed.
【００２２】[0022]
【発明の効果】以上説明したように本発明における請求
項１記載の電界発光素子は、有機物発光層が電気化学法
により形成されたものであるから、その形成に際して例
えば蒸着法を採用した場合のように大型の製造設備が必
要となることなく、比較的簡易な装置によりその形成が
可能になり、したがって製造コストが従来に比べ安価な
ものとなる。また、マスクレジスト層によって区画され
た開口部内にのみ有機物発光層が形成されていることか
ら、該発光層形成面が比較的小面積となり、したがって
大面積の発光層の場合に比べ発光層（膜）が均一でかつ
欠陥のないものとなる。請求項２記載の電界発光素子の
製造方法は、透明電極層の所定位置を露出させてマスク
レジスト層を形成し、この露出させた箇所に有機物発光
層を形成するものであるから、無駄なく、所望する箇所
にのみ有機物発光層を形成することができ、これによっ
て製造コストの低減化を図ることができる。As described above, in the electroluminescent device according to claim 1 of the present invention, the organic light emitting layer is formed by the electrochemical method. Therefore, when the organic light emitting layer is formed, for example, the vapor deposition method is adopted. As described above, it is possible to form the structure with a relatively simple device without requiring a large-scale manufacturing facility, and thus the manufacturing cost is lower than that of the conventional one. Further, since the organic light emitting layer is formed only in the opening defined by the mask resist layer, the light emitting layer forming surface has a relatively small area, and therefore the light emitting layer (film) is larger than that in the case of a large area light emitting layer. ) Is uniform and free of defects. In the method for manufacturing an electroluminescent element according to claim 2, since the mask resist layer is formed by exposing a predetermined position of the transparent electrode layer, and the organic light emitting layer is formed at the exposed portion, there is no waste. The organic light emitting layer can be formed only in a desired portion, and thus the manufacturing cost can be reduced.
【００２３】請求項３記載の電界発光素子の製造方法
は、有機物発光層の作製を電解重合法によって行うよう
にしたものであるから、比較的簡易な装置を使用するこ
とによって有機物発光層を作製することができ、したが
って製造コストの低減化を図ることができる。また、重
合液の配合を変えることにより、所望する色を発光する
有機物発光層を容易に形成することができる。さらに、
マスクレジスト層を用いて透明電極層の所定位置の上に
のみ有機物発光層を形成するようにしたことから、無駄
なく、所望する箇所にのみ有機物発光層を形成でき、こ
れによって一層製造コストの低減化を図ることができる
とともに、マスクレジスト層によって区画される所定位
置にのみ有機物発光層を形成することから、該発光層形
成面が比較的小面積となり、したがって大面積の発光層
を形成する場合に比べ発光層（膜）を均一にかつ欠陥の
ないように形成するのが容易になる。請求項４記載の電
界発光素子の製造方法は、透明電極、背面電極をストラ
イプ状に形成してその交点となる部分に有機物発光層を
形成したものであるから、これら交点となる部分を例え
ば等間隔にすることにより、得られる発光素子をドット
表示用のものにすることができる。In the method for manufacturing an electroluminescent element according to the third aspect of the invention, since the organic light emitting layer is manufactured by the electrolytic polymerization method, the organic light emitting layer is manufactured by using a relatively simple apparatus. Therefore, the manufacturing cost can be reduced. Further, by changing the composition of the polymerization liquid, an organic light emitting layer that emits a desired color can be easily formed. further,
Since the organic light emitting layer is formed only on the predetermined position of the transparent electrode layer by using the mask resist layer, the organic light emitting layer can be formed only on a desired portion without waste, thereby further reducing the manufacturing cost. When the organic light emitting layer is formed only at a predetermined position defined by the mask resist layer, the light emitting layer forming surface has a relatively small area, and thus a large light emitting layer is formed. It becomes easier to form the light emitting layer (film) uniformly and without any defect as compared with the above. In the method for manufacturing an electroluminescent device according to claim 4, since the transparent electrode and the back electrode are formed in a stripe shape and the organic light emitting layer is formed at the intersection points, the intersection points are formed, for example, in the same manner. By setting the intervals, the obtained light emitting element can be used for dot display.
【図１】本発明の製造方法を説明するための図であっ
て、透明基板上に透明電極層が設けられている状態を示
す斜視図。FIG. 1 is a diagram for explaining the manufacturing method of the present invention, which is a perspective view showing a state in which a transparent electrode layer is provided on a transparent substrate.
【図２】透明電極層からストライプ状の透明電極を形成
した状態を示す斜視図。FIG. 2 is a perspective view showing a state in which a stripe-shaped transparent electrode is formed from a transparent electrode layer.
【図３】マスクレジスト層を形成した状態を示す一部破
断斜視図。FIG. 3 is a partially cutaway perspective view showing a state where a mask resist layer is formed.
【図４】マスクレジスト層に孔部を形成した状態を示す
一部破断斜視図。FIG. 4 is a partially cutaway perspective view showing a state where holes are formed in a mask resist layer.
【図５】電解重合装置の概略構成図。FIG. 5 is a schematic configuration diagram of an electrolytic polymerization apparatus.
【図６】孔部内に有機物発光層を形成した状態を示す一
部破断斜視図。FIG. 6 is a partially cutaway perspective view showing a state in which an organic light emitting layer is formed in a hole.
【図７】金属電極を形成した状態を示す一部破断斜視
図。FIG. 7 is a partially cutaway perspective view showing a state in which a metal electrode is formed.
【図８】本発明方法が適用される発光素子の変形例を示
す側断面図。FIG. 8 is a side sectional view showing a modified example of a light emitting device to which the method of the present invention is applied.
【図９】本発明方法が適用される発光素子の別の変形例
を示す側断面図。FIG. 9 is a side sectional view showing another modification of the light emitting device to which the method of the present invention is applied.
【図１０】従来の電解発光素子の一例を示す側断面図。FIG. 10 is a side sectional view showing an example of a conventional electrolytic light emitting device.
１０ 透明基板 １１ 透明電極膜 １１ａ 透明電極 １２ マスクレジスト層 １３ 孔部（開口部） １５ 有機物発光層 １６ 重合液 ２１ 金属電極（背面電極） 10 Transparent Substrate 11 Transparent Electrode Film 11a Transparent Electrode 12 Mask Resist Layer 13 Hole (Opening) 15 Organic Light Emitting Layer 16 Polymerization Liquid 21 Metal Electrode (Back Electrode)
Claims (4)
と、該透明基板の透明電極側に設けられかつ前記透明基
板の所定位置を露出させる開口部を有した形状規制用の
絶縁性マスクレジスト層と、該マスクレジスト層の前記
開口部内に電気化学法により形成されてなる有機物発光
層と、該有機物発光層を覆って設けられた背面電極とを
有してなることを特徴とする電界発光素子。1. A shape-regulating insulating mask resist having a transparent substrate having a transparent electrode on one surface and an opening provided on the transparent electrode side of the transparent substrate and exposing a predetermined position of the transparent substrate. Layer, an organic light-emitting layer formed by an electrochemical method in the opening of the mask resist layer, and a back electrode provided so as to cover the organic light-emitting layer. element.
の透明電極層上に、該透明電極層の所定位置を露出させ
て前記透明基板の透明電極層側に形状規制用の絶縁性マ
スクレジスト層を形成し、次に、電気化学法により前記
透明電極層の所定位置の上に有機物発光層を形成し、そ
の後、該有機物発光層を覆って背面電極を形成すること
を特徴とする電界発光素子の製造方法。2. An insulating mask for shape regulation on a transparent electrode layer of a transparent substrate having a transparent electrode layer on one surface, exposing a predetermined position of the transparent electrode layer on the transparent electrode layer side of the transparent substrate. An electric field characterized by forming a resist layer, then forming an organic light emitting layer on a predetermined position of the transparent electrode layer by an electrochemical method, and then forming a back electrode to cover the organic light emitting layer. Method for manufacturing light emitting device.
の透明電極層上に、該透明電極層の所定位置を露出させ
て前記透明基板の透明電極層側に絶縁性のマスクレジス
ト層を形成し、次に、該透明電極層を作用極として用
い、有機物発光層を形成するための重合液中にて電解重
合することにより前記透明電極層の所定位置の上に有機
物発光層を形成し、その後、該有機物発光層を覆って背
面電極を形成することを特徴とする電界発光素子の製造
方法。3. On a transparent electrode layer of a transparent substrate having a transparent electrode layer on one surface, a predetermined position of the transparent electrode layer is exposed and an insulating mask resist layer is provided on the transparent electrode layer side of the transparent substrate. Then, the transparent electrode layer is used as a working electrode to form an organic light emitting layer on a predetermined position of the transparent electrode layer by electrolytic polymerization in a polymerization liquid for forming an organic light emitting layer. Then, a method for manufacturing an electroluminescent device, characterized in that a back electrode is formed so as to cover the organic light emitting layer.
数列の透明電極を有する透明基板の透明電極上に、該透
明電極の所定位置を露出させて前記透明基板の透明電極
側に絶縁性のマスクレジスト層を形成し、次に、該透明
電極を作用極として用い、有機物発光層を形成するため
の重合液中にて電解重合することにより前記透明電極の
所定位置の上に有機物発光層を形成し、その後、該有機
物発光層を覆って、前記透明電極と直交するストライプ
状に形成された複数列の背面電極を形成することを特徴
とする電界発光素子の製造方法。4. A transparent electrode of a transparent substrate having a plurality of rows of transparent electrodes formed in a stripe shape on one surface, exposing a predetermined position of the transparent electrode, and insulating the transparent substrate from the transparent electrode side. Of the organic light emitting layer is formed on the predetermined position of the transparent electrode by electrolytically polymerizing in a polymerization solution for forming an organic light emitting layer using the transparent electrode as a working electrode. And then forming a plurality of rows of back electrodes that are formed in stripes orthogonal to the transparent electrode, and then cover the organic light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01210894A JP3503170B2 (en) | 1993-06-29 | 1994-01-06 | Electroluminescent device and method of manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-185622 | 1993-06-29 | ||
| JP18562293 | 1993-06-29 | ||
| JP01210894A JP3503170B2 (en) | 1993-06-29 | 1994-01-06 | Electroluminescent device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0773969A true JPH0773969A (en) | 1995-03-17 |
| JP3503170B2 JP3503170B2 (en) | 2004-03-02 |
Family
ID=26347679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01210894A Expired - Fee Related JP3503170B2 (en) | 1993-06-29 | 1994-01-06 | Electroluminescent device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3503170B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001078151A3 (en) * | 2000-04-11 | 2002-02-28 | Rockwell Tech Llc | Patterning of polymer light emitting devices using electrochemical polymerization |
| US7179147B2 (en) * | 2003-04-24 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of electroluminescent device |
| CN100463249C (en) * | 2006-01-24 | 2009-02-18 | 吉林大学 | Preparing organic light emitting film by electrochemical deposition and use in electroluminescence device |
| JP2010529599A (en) * | 2007-05-31 | 2010-08-26 | エンスディグリー テクノロジーズ ワールドワイド インコーポレーテッド | Method of manufacturing an addressable and static electronic display, power generator or other electronic device |
| US9777914B2 (en) | 2007-05-31 | 2017-10-03 | Nthdegree Technologies Worldwide Inc. | Light emitting apparatus having at least one reverse-biased light emitting diode |
-
1994
- 1994-01-06 JP JP01210894A patent/JP3503170B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001078151A3 (en) * | 2000-04-11 | 2002-02-28 | Rockwell Tech Llc | Patterning of polymer light emitting devices using electrochemical polymerization |
| US7179147B2 (en) * | 2003-04-24 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of electroluminescent device |
| US7416465B2 (en) | 2003-04-24 | 2008-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of electroluminescent device |
| CN100463249C (en) * | 2006-01-24 | 2009-02-18 | 吉林大学 | Preparing organic light emitting film by electrochemical deposition and use in electroluminescence device |
| JP2010529599A (en) * | 2007-05-31 | 2010-08-26 | エンスディグリー テクノロジーズ ワールドワイド インコーポレーテッド | Method of manufacturing an addressable and static electronic display, power generator or other electronic device |
| US9777914B2 (en) | 2007-05-31 | 2017-10-03 | Nthdegree Technologies Worldwide Inc. | Light emitting apparatus having at least one reverse-biased light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3503170B2 (en) | 2004-03-02 |
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