JPH02307048A - Inspection device for wafer outward apperance - Google Patents

Inspection device for wafer outward apperance

Info

Publication number
JPH02307048A
JPH02307048A JP12916489A JP12916489A JPH02307048A JP H02307048 A JPH02307048 A JP H02307048A JP 12916489 A JP12916489 A JP 12916489A JP 12916489 A JP12916489 A JP 12916489A JP H02307048 A JPH02307048 A JP H02307048A
Authority
JP
Japan
Prior art keywords
area
inspection
wafer
image
reference area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12916489A
Other languages
Japanese (ja)
Inventor
Hisafumi Miyatake
宮竹 尚史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP12916489A priority Critical patent/JPH02307048A/en
Publication of JPH02307048A publication Critical patent/JPH02307048A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Input (AREA)

Abstract

PURPOSE:To input pattern images of a reference area and an inspection area and to compare and inspect the patterns without any complicate adjustments by switching the optical paths of the reference area and inspection area by a changeover mirror. CONSTITUTION:This inspection device is provided with an XY stage 7 which can moves in an X-Y direction while mounting a wafer 6, objectives 5a and 5b which input the two image patterns, shutters 4a, and 4b, half-mirrors 3a and 3b, and the changeover mirror 3 which switches the two image patterns. Then when the pattern image of the reference area is inputted, the reference-side shutter 4a is opened and the light from a light source 1 is converged on the reference area 4b of the wafer 6 through the objective 5a. Further, when the pattern image of the inspection area is inputted, the inspection-side shutter 4b is opened and the light from the light source 1 is converged on the inspection area of the wafer 6 through the objective 5b. The switched image patterns are photographed by a CCD camera 9 and the image patterns which are inputted to the camera 9 is converted by a processor 10 into a binary signal, which is stored in a computer 11.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はウェーハ外観検査装置に関し、特にパターンマ
ツチング方式のウェーハ外観検査装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wafer visual inspection apparatus, and particularly to a pattern matching type wafer visual inspection apparatus.

〔従来の技術〕[Conventional technology]

従来、この種のパターンマツチング方式の自動ウェーハ
外観検査装置には、2種類ある。その一つは、1組の光
学系と1個のカメラで、ウェーノーが搭載されているX
Yステージを移動させて参照エリアと検査エリアの画像
を取り込む方式である。
Conventionally, there are two types of automatic wafer visual inspection apparatuses using this type of pattern matching method. One is a set of optical systems and a camera, and the X
This method captures images of the reference area and inspection area by moving the Y stage.

もう一つは2組の光学系と2個のカメラで参照エリアと
検査エリアの画像をX−Yステージで移動することなく
、同時に取り込む方式である。
The other method uses two sets of optical systems and two cameras to simultaneously capture images of the reference area and inspection area without moving the XY stage.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のウェーハ外観検査装置の内、前者では、
参照エリアの画像を取り込んだ後に検査エリアまでX−
Yステージを移動させて検査エリアの画像を取り込まな
ければならないため、検査時間が長くなるという欠点が
ある。
Among the conventional wafer visual inspection devices mentioned above, the former
After capturing the image of the reference area, move it to the inspection area
Since the Y stage must be moved to capture an image of the inspection area, there is a drawback that the inspection time becomes longer.

また、後者の場合は、検査時間は短縮されるが、2個の
カメラの特性のマツチングをとってやらなけhばならな
いため、調整が複雑になり、複数のブレーンレベルが混
在する多層パターンのあるウェーハを検査する場合は、
検査が実施できないという問題がある。本発明の目的は
、かかる問題を解消するウェーハ外観検査装置を提供す
ることである。
In the latter case, the inspection time is shortened, but the adjustment is complicated because the characteristics of the two cameras must be matched, and when there is a multilayer pattern with multiple brain levels. When inspecting wafers,
There is a problem that testing cannot be carried out. An object of the present invention is to provide a wafer visual inspection apparatus that solves this problem.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の自動ウェーハ外観検査装置は、パターン像を撮
影する1個のCCDカメラと、参照エリアと検査エリア
の画像を取り込むための各々1個ずつの対物レンズ、シ
ャッター、ハーフミラ−。
The automatic wafer appearance inspection apparatus of the present invention includes one CCD camera for photographing a pattern image, one objective lens, one shutter, and one half mirror for capturing images of a reference area and an inspection area.

ミラーと、前記参照エリアと前記検査エリアの光路を切
換える切換ミラーとを備え構成さ九る。
The apparatus includes a mirror and a switching mirror that switches the optical path between the reference area and the inspection area.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示すウェーハ外観検査装置
のブロック図である。このウェーハ外観検査装置は同図
に示すようにウェーハ6を搭載し、XY方向に移動出来
るXYステージ7と、ウェーハ面の二つの領域に光を反
射し、二つの画像パターンを取り込む二組の対物レンズ
、シャッター、ハーフミラ−と、この二つの画像パター
ンを切換える切換えミラー3と、切換えられた画像パタ
ーンを撮影するCCDカメラ9と、CCDカメラ9より
圧力さ托る画像パターン言置をディジタル化し、二つの
画像パターンを比較するイメージプロセッサ10及びコ
ンピュータ11とで構成されている。
FIG. 1 is a block diagram of a wafer visual inspection apparatus showing an embodiment of the present invention. As shown in the figure, this wafer visual inspection system has a wafer 6 mounted thereon, an XY stage 7 that can move in the XY directions, and two sets of objectives that reflect light onto two areas of the wafer surface and capture two image patterns. A lens, a shutter, a half mirror, a switching mirror 3 for switching between these two image patterns, a CCD camera 9 for photographing the switched image pattern, and a digitalization of the image pattern words exposed by the CCD camera 9. The computer 11 includes an image processor 10 and a computer 11 that compare two image patterns.

次に、このウェーハ外観検査装置の動作を説明する。ま
ず、参照エリア(領域)パターン像を取り込む際は、参
照側のシャッター4aを開き、検査側のシャッター4b
を閉じる。次に、参照側のハロゲン光源1aから放射さ
れた光は、N−Dフィルタ2aで最適量に調節され、ハ
ーフミラ−3aと、開いているシャッター4aとを通っ
て、対物レンズ5aでウェーハ6の参照エリアに集光さ
れる。参照エリアからの反射光によるパターン像は、再
び対物レンズ5a、シャッター4a及びハーフミラ−3
aを通って、ミラー8a及び切換ミラー3で屈折され、
CCDカメラ9に取り込まれる。CCDカメラ9に取り
込まれた画像パターンはイメージプロセッサ10で2値
化され、コンピュータ11に蓄積される。
Next, the operation of this wafer visual inspection apparatus will be explained. First, when capturing a reference area (area) pattern image, open the shutter 4a on the reference side, and open the shutter 4b on the inspection side.
Close. Next, the light emitted from the halogen light source 1a on the reference side is adjusted to an optimal amount by an ND filter 2a, passes through a half mirror 3a and an open shutter 4a, and is directed to the wafer 6 by an objective lens 5a. The light is focused on the reference area. The pattern image by the reflected light from the reference area is again transmitted to the objective lens 5a, shutter 4a and half mirror 3.
a, is refracted by the mirror 8a and the switching mirror 3,
The image is taken into the CCD camera 9. The image pattern captured by the CCD camera 9 is binarized by an image processor 10 and stored in a computer 11.

次に、検査エリアのパターン像を取り込むために、参照
側のシャッター4aを閉じ検査側のシャッター4bを開
く。次にハロゲン光源1bから放射された光は、N−D
フィルター2bで最適量に調整され、ハーフミラ−3b
と開いているシャッター4bを通って、対物レンズ5b
で検査エリア集光される。照検査エリアのパターン像は
再び対物レンズ5b、シャッター4b及び検査側ハーフ
ミラ−3bを通って、ミラー8b及び検査エリア側に切
換えられた切換ミラー3で屈折され、CCDカメラ9に
取り込まれる。CCDカメラ9に取り込まれた画像パタ
ーンは、イメージプロセッサ10で2値化され、コンピ
ュータ11で参照エリアのパターン像の2値化データと
比較され、パターン欠陥・異物等の検出を行なう。
Next, in order to capture a pattern image of the inspection area, the shutter 4a on the reference side is closed and the shutter 4b on the inspection side is opened. Next, the light emitted from the halogen light source 1b is N-D
Adjusted to the optimum amount with filter 2b, half mirror 3b
and the objective lens 5b through the open shutter 4b.
The light is focused on the inspection area. The pattern image of the target inspection area passes through the objective lens 5b, shutter 4b, and inspection side half mirror 3b again, is refracted by the mirror 8b and the switching mirror 3 switched to the inspection area side, and is taken into the CCD camera 9. The image pattern captured by the CCD camera 9 is binarized by the image processor 10, and compared with the binarized data of the pattern image of the reference area by the computer 11 to detect pattern defects, foreign objects, etc.

第2図は本発明の他の実施例を示すウェーハ外観検査装
置のブロック図である。このウェーハ外観検査装置は、
ハロゲン光源を一個にし、光源を共用にしたことである
。それ以外は、前述の実施例と同じである。
FIG. 2 is a block diagram of a wafer visual inspection apparatus showing another embodiment of the present invention. This wafer visual inspection equipment is
The halogen light source was reduced to one, and the light source was shared. The rest is the same as the previous embodiment.

この実施例では、ハロゲン光源lを1つにまとめている
ので、前述の実施例の場合のように、2つのハロゲン光
源1a及び1bのマッチングヲトる必要がないという利
点がある。
In this embodiment, since the halogen light sources 1 are combined into one, there is an advantage that there is no need to match the two halogen light sources 1a and 1b as in the case of the previous embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明ウェーハ外観検査装置は、パ
ターン像を撮影する1個とCCDカメラと、参照エリア
と検査エリアの画像を取り込むための各41個ずつの対
物レンズ・シャッター・ハーフミラ−・ミラーと、参照
エリアと検査エリアの光路を切換える切換ミラーを設け
ることにより、X−Yステージの移動する必要がないと
ともにカメラの特性のマツチング調査等複雑な調整する
ことなく、参照エリアと検査エリアのパターン像を取り
込み、パターンの比較検査を実施できるという効果があ
る。
As explained above, the wafer visual inspection apparatus of the present invention includes one for taking a pattern image, a CCD camera, and 41 objective lenses, shutters, half mirrors, and mirrors for capturing images of a reference area and an inspection area. By providing a switching mirror that switches the optical path between the reference area and the inspection area, there is no need to move the X-Y stage, and the pattern between the reference area and inspection area can be changed without the need for complicated adjustments such as matching the characteristics of the camera. This has the advantage that images can be captured and comparative inspection of patterns can be performed.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示すウェーハ外観検査装置
のブロック図、第2図は他の実施例を示すウェーハ外観
検査装置のブロック図である。 1 、 1 a 、  1 b=−−ハロゲン光源、2
a、2b・・・・・・NDフィルタ、3・・・・・・切
換ミラー、3a、3b・・・・・ハーフミラ−,4a、
4b・・・・・・シャッタ、5a。 5b・・・・・対物レンズ、6・・・・・・ウェーハ、
7・・・・・・XYステージ、8a、8b・・・・・・
ミラー、9・・・・・・CCDカメラ、10・・・・・
・イメージプロセッサ、11・・・・・・コンピュータ
。 代理人 弁理士  内 原   音 万 1 図
FIG. 1 is a block diagram of a wafer visual inspection apparatus showing one embodiment of the present invention, and FIG. 2 is a block diagram of a wafer visual inspection apparatus showing another embodiment. 1, 1a, 1b=--halogen light source, 2
a, 2b...ND filter, 3...Switching mirror, 3a, 3b...Half mirror, 4a,
4b...Shutter, 5a. 5b...Objective lens, 6...Wafer,
7...XY stage, 8a, 8b...
Mirror, 9... CCD camera, 10...
- Image processor, 11... computer. Agent Patent Attorney Otoman Uchihara 1 Figure

Claims (1)

【特許請求の範囲】[Claims] パターン画像を撮影する1個のCCDカメラと、参照エ
リアと検査エリアのそれぞれのパターン画像を取り込む
ための各々1個ずつの対物レンズ、シャッター、ハーフ
ミラー、ミラーと前記参照エリアと前記検査エリアの光
路を切換える切換ミラーとを備えることを特徴とするウ
ェーハ外観検査装置。
One CCD camera that takes a pattern image, one objective lens, shutter, half mirror, mirror, and optical path of the reference area and the inspection area to take in each pattern image of the reference area and the inspection area. A wafer appearance inspection device characterized by comprising a switching mirror for switching.
JP12916489A 1989-05-22 1989-05-22 Inspection device for wafer outward apperance Pending JPH02307048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12916489A JPH02307048A (en) 1989-05-22 1989-05-22 Inspection device for wafer outward apperance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12916489A JPH02307048A (en) 1989-05-22 1989-05-22 Inspection device for wafer outward apperance

Publications (1)

Publication Number Publication Date
JPH02307048A true JPH02307048A (en) 1990-12-20

Family

ID=15002727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12916489A Pending JPH02307048A (en) 1989-05-22 1989-05-22 Inspection device for wafer outward apperance

Country Status (1)

Country Link
JP (1) JPH02307048A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003014658A3 (en) * 2001-08-08 2003-11-20 Nova Measuring Instr Ltd Method and apparatus for process control in the semiconductor manufacturing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003014658A3 (en) * 2001-08-08 2003-11-20 Nova Measuring Instr Ltd Method and apparatus for process control in the semiconductor manufacturing
US6806971B2 (en) 2001-08-08 2004-10-19 Nova Measuring Instruments Ltd. Method and apparatus for process control in semiconductor manufacture

Similar Documents

Publication Publication Date Title
KR101207198B1 (en) Board inspection apparatus
US7355690B2 (en) Double inspection of reticle or wafer
JP6640482B2 (en) Pattern inspection apparatus and pattern inspection method
JPH05264221A (en) Device for detecting mark position for semiconductor exposure device and positioning deice for semiconductor exposure device using the same
KR101523336B1 (en) apparatus for examining pattern image of semiconductor wafer
JP2012002676A (en) Mask defect checking device and mask defect checking method
US10489902B2 (en) Inspection apparatus, semiconductor device manufacturing system including the same, and method of manufacturing a semiconductor device using the same
EP1978353B1 (en) Multiple surface inspection system and method
CN209745834U (en) Optical defect detection system with brightness adjustment
JPH02307048A (en) Inspection device for wafer outward apperance
JP2020042035A (en) Pattern inspection device and pattern inspection method
US20020071612A1 (en) Imaging system for minimizing pixel defects
JPS5980965A (en) Solid-state image pickup element inspection device
JPH05332739A (en) Appearance inspecting device
TWI836925B (en) Inspection device for photomask box sub-components
KR101566347B1 (en) Substrate inspecting apparatus
TW201514479A (en) Defect viewing device and defect viewing method
JPS6048683B2 (en) Object surface condition inspection method and inspection device
TWI847575B (en) Optical inspection device for photomask box surface and optical inspection method for photomask box surface
WO2022153772A1 (en) Visual inspection device
JPH04142055A (en) Inspecting apparatus for appearance of semiconductor wafer
JP5177651B2 (en) Object recognition apparatus and method
KR0139970Y1 (en) Image gain device
JP3091825B2 (en) Wafer foreign matter detection method
KR101861293B1 (en) Apparatus for inspecting optical lense and control mothod thereof