JPH01238182A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPH01238182A JPH01238182A JP6612288A JP6612288A JPH01238182A JP H01238182 A JPH01238182 A JP H01238182A JP 6612288 A JP6612288 A JP 6612288A JP 6612288 A JP6612288 A JP 6612288A JP H01238182 A JPH01238182 A JP H01238182A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type inp
- buried
- type
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000005253 cladding Methods 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000408551 Meza Species 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体発光装置に関し、
駆動回路と半導体発光装置とのマンチングを容易にする
ため、半導体レーザの入力インピーダンスを高くし得る
新奇な構造を提供することを目的とし、
一導電型を有する第１のクラッド層、活性層。[Detailed Description of the Invention] [Summary] Regarding a semiconductor light emitting device, an object of the present invention is to provide a novel structure that can increase the input impedance of a semiconductor laser in order to facilitate munching between a drive circuit and the semiconductor light emitting device. , a first cladding layer and an active layer having one conductivity type.
および反対導電型を有する第２のクラッド層が積層され
、且つ、前記活性層（４）および反対導電型の第２のク
ラッド層（５）の側壁部に形成された一導電型の光閉じ
込め層を有するとともに、前記第１のクラッド層内に埋
め込まれ且つその端部が外部に導出された反対導電型の
埋込層を有し、該反対導電型の埋込層と前記第１のクラ
ッド層とのｐ−ｎ接合に所望の電圧を印加することによ
り、活性層に流れる電流を制御可能とした構成とする。and a second cladding layer having an opposite conductivity type are laminated, and an optical confinement layer of one conductivity type is formed on the sidewalls of the active layer (4) and the second cladding layer (5) of the opposite conductivity type. and a buried layer of an opposite conductivity type that is buried in the first cladding layer and whose end portion is led outside, the buried layer of the opposite conductivity type and the first cladding layer. The current flowing through the active layer can be controlled by applying a desired voltage to the p-n junction with the active layer.
本発明は半導体発光装置に関する。 The present invention relates to a semiconductor light emitting device.
従来半導体レーザの発光を変調するのに、外部駆動回路
により直接変調する方法が使用されていた。Conventionally, to modulate the light emission of a semiconductor laser, a method of direct modulation using an external driving circuit has been used.
この変調方法では、半導体レーザの入力インピーダンス
が低いため、駆動回路と半導体レーザのマツチングをと
る必要がある。In this modulation method, since the input impedance of the semiconductor laser is low, it is necessary to match the drive circuit and the semiconductor laser.
〔発明が解決しようとする課題］
Ｌ記従来方法では駆動回路が複雑になるばかりでなく、
駆動回路自身を個々に調整する必要が生じる。[Problem to be solved by the invention] The conventional method described in L not only makes the drive circuit complicated, but also
It becomes necessary to individually adjust the drive circuits themselves.
本発明は駆動回路と半導体発光装置とのマツチングを容
易にするため、半導体レーザの入力インピーダンスを高
（し得る新奇な構造を提供することをｌ」的とする。An object of the present invention is to provide a novel structure that can increase the input impedance of a semiconductor laser in order to facilitate matching between a drive circuit and a semiconductor light emitting device.
第１図（ａ）、 （ｂ）により、本発明に係る半導体発
光装置の構成を、Ｉ ｎ Ａ ｓ Ｐ ／ Ｉ ｎ Ｐ
系のレーザを一例として説明する。なお同図（ｂ）は（
ａ）の１−１矢視部断面を示す図である。1(a) and (b), the structure of the semiconductor light emitting device according to the present invention is expressed as I n A s P / I n P
A laser system will be explained as an example. Note that (b) in the same figure is (
It is a figure which shows the 1-1 arrow cross section of a).
ｎ −１ｎ Ｐクラッド層（−導電型の第１のクラッド
層）１．ＩｎＧａＡｓＰ活性層４．ｐ−１ｎＰクラツド
層（反対導電型の第２のクラッド層）５を、ｐ−１ｎＰ
埋込層２、ｎ−１ｎＰ光閉じ込め層で埋め込み、更に、
ｎ−１ｎＰクラツド層１内に同図（ｂ）に示す如く、ｐ
−１ｎＰ埋込層２′をすだれ状に埋め込んだものである
。n −1n P cladding layer (-conductivity type first cladding layer)1. InGaAsP active layer 4. The p-1nP cladding layer (second cladding layer of opposite conductivity type) 5 is made of p-1nP
Buried layer 2, buried with n-1nP optical confinement layer, further,
In the n-1nP cladding layer 1, as shown in FIG.
-1nP buried layer 2' is buried in a blind shape.
なお同図の１．８．９は電極である。Note that 1.8.9 in the same figure is an electrode.
すだれ状のｐ−１ｎＰ埋込層２°とｎ−１ｎＰクラツド
層１間の逆バイアスＥを変化させることにより、ＩｎＧ
ａＡｓＰ活性層４に流れる電流Ｉを制御できる。この時
の入力インピーダンスは、ｐ−ｎ接合に逆バイアスＥを
印加しているので、電流は殆ど流れず、無限大に近い。By changing the reverse bias E between the interdigital p-1nP buried layer 2° and n-1nP cladding layer 1, InG
The current I flowing through the aAsP active layer 4 can be controlled. Since the reverse bias E is applied to the pn junction, almost no current flows and the input impedance at this time is close to infinity.
第２図（ａ）、 （ｂ）に示す如く、キャリア濃度が凡
そ２ Ｘ１０Ｉ７ｃ ｍ−３のｎ−１ｎＰクラツド層１
表面の不要部を除去して、幅約１．５μｍ、高さ約０．
４μｍの凸部３０を形成し、その上にキャリア濃度が凡
そ４ＸＩＯ”ｃｍ−３のｐ−１ｎＰ埋込層２を、凡そ０
．６μｍの厚さに成長する。As shown in FIGS. 2(a) and (b), an n-1nP cladding layer 1 with a carrier concentration of approximately 2×10I7cm-3
Unwanted parts of the surface were removed to give a width of approximately 1.5 μm and a height of approximately 0.
A convex portion 30 of 4 μm is formed, and a p-1nP buried layer 2 with a carrier concentration of approximately 4XIO”cm−3 is formed thereon.
．． Grows to a thickness of 6 μm.
次いでこのｐ−ＩｎＰ埋込層２を選択的に除去して、ピ
ッチ約０．４μｍ、深さ約０．２μｍ２幅約０．２μｍ
の溝２０を複数個形成し、この溝２０の底部で上記ｎ−
１ｎＰクラツド層Ｉの凸部３０表面を露出させる。Next, this p-InP buried layer 2 is selectively removed to form a pitch of about 0.4 μm, a depth of about 0.2 μm, and a width of about 0.2 μm.
A plurality of grooves 20 are formed at the bottom of the grooves 20.
The surface of the convex portion 30 of the 1nP cladding layer I is exposed.
次いで上記ウェーハ上に第２図（Ｃ）に示す如く、約２
Ｘ １０” ｃ ｒｒｒ’のキャリア濃度を有し、約
０．５μｍの厚さのｎ−１ｎＰクラツド層１″、約０．
１５μｍの厚さを有するｒ ｎＣ；ａＡｓ Ｐ活性層４
．約２×１０１８ｃｍ−３のキャリア濃度を有し厚さ約
１．５μｍのｐ−ＩｎＰ層５を積層し、これらの不要部
を除去して図示の如くメサ状に形成し、このメザ部をそ
の側壁部に形成した２ Ｘ １０” ｃ、 ｍ−”のキ
ャリア濃度のｎ−１ｎＰ層６で埋め込む。続いてｎ電極
７，９およびｎ電極８を形成する。Next, as shown in FIG. 2(C), about 2
An n-1 nP cladding layer 1'' with a carrier concentration of x 10''crrr' and a thickness of about 0.5 μm, about 0.5 μm thick.
r nC; aAs P active layer 4 with a thickness of 15 μm
．． A p-InP layer 5 having a carrier concentration of approximately 2×10 18 cm −3 and a thickness of approximately 1.5 μm is laminated, unnecessary portions thereof are removed to form a mesa shape as shown in the figure, and this meza portion is An n-1nP layer 6 having a carrier concentration of 2×10"c, m-" is formed on the sidewall portion and is buried. Subsequently, n-electrodes 7 and 9 and n-electrode 8 are formed.
以上で前記第１図（ｂ）で説明した如く、ｎ−Ｉｎ２層
１，１°内に複数個のｐ −Ｔ ｎ Ｐ層２゛がすだれ
状に埋め込まれる。As explained above with reference to FIG. 1(b), a plurality of p-TnP layers 2' are embedded in the n-In2 layer 1,1° in a comb-like manner.
かかる構造とした本実施例では、電極７，８間に＋２■
を印加した時、電極９．８間がＯＶであると、１ ｎＧ
ａＡｓ Ｐ活性層４に流れる電流は凡そ１００ｍＡであ
るが、電極９，８間の印加電圧を一４■とすると、Ｉ
ｎＧａＡｓ Ｐ活性層４に流れる電流はＯｍＡとなり、
入力インピーダンスは数ＭΩ以上となった。In this embodiment with such a structure, there is +2■ between the electrodes 7 and 8.
When OV is applied between electrodes 9.8, 1 nG
The current flowing through the aAsP active layer 4 is approximately 100 mA, but if the voltage applied between the electrodes 9 and 8 is -4
The current flowing through the nGaAs P active layer 4 is OmA,
The input impedance was several MΩ or more.
以上説明した如く本発明によれば、レーザの人力インピ
ーダンスが、従来数Ω程度であったものが、数ＭΩ以上
となるため、駆動回路に付加する抵抗やコンデンサが不
要となり、且つ調整も不要となる。As explained above, according to the present invention, the human power impedance of the laser, which was conventionally about several Ω, increases to several MΩ or more, so there is no need for a resistor or capacitor to be added to the drive circuit, and no adjustment is required. Become.
第１図（ａ）、 （ｂ）は本発明の構成説明図、第２図
（ａ）〜（Ｃ）は本発明一実施例を製造工程とともに示
す図である。
図において、■、１゛は一導電型の第１のクラッド層（
ｎ−１ｎＰクラッド層）、２は反対導電型埋込層（ｐ−
１ｎＰ埋込層）、２′は反対導電型のすだれ状埋込層、
４はＩｎＧａＡｓＰ活性層、５は反対導電型の第２のク
ラッド層（ｐ−１ｎＰクラッド層）、６は一導電型の光
閉じ込め層（ｎ−ＩｎＰ層）、７はｐ−電極■、８はｎ
−電極、９はｐ−電極を示す。
￥１１・ｎ
イ２ ）ａ
手続主甫正書（ブ几０
羽生のヌレ六
昭和６３年特許願第０６６１２２号
発明の名称
半導体発光装置
補正をする者
羽生との関係 特許出願人
住所 神奈川県用崎市中原区上小田中１０１５番地名称
（５２２） 富士通株式会社
７゜
８゜
不発−の穆訪鑓先口洞図
第１図
手”ＢＡ −＋ｉ、ち社（利Σ装動１ニオ呈ヒヒｖ（こ
示１１１ｆｆｉ第２図FIGS. 1(a) and 1(b) are diagrams illustrating the configuration of the present invention, and FIGS. 2(a) to (C) are diagrams showing one embodiment of the present invention together with manufacturing steps. In the figure, ■, 1゛ is the first cladding layer of one conductivity type (
n-1nP cladding layer), 2 is a buried layer of the opposite conductivity type (p-
1nP buried layer), 2' is an interdigital buried layer of opposite conductivity type,
4 is an InGaAsP active layer, 5 is a second cladding layer of the opposite conductivity type (p-1nP cladding layer), 6 is an optical confinement layer of one conductivity type (n-InP layer), 7 is a p-electrode, and 8 is a n
- electrode, 9 indicates the p-electrode. ￥11・n A2) a Procedural master's letter (Bu 几 0 Hanyu's Nure 6, 1985 Patent Application No. 066122 Name of the invention Semiconductor light emitting device Person making the amendment Relationship with Hanyu Patent applicant address Kanagawa Prefecture) 1015 Kamiodanaka, Nakahara-ku, Saki-shi Name (522) Fujitsu Ltd. (See 111ffi Figure 2.
Claims (1)
層（４）、および反対導電型を有する第２のクラッド層
（５）が積層され、且つ、前記活性層（４）および反対
導電型の第２のクラッド層（５）の側壁部に形成された
一導電型の光閉じ込め層（６）を有するとともに、前記
第１のクラッド層（１、１’）内にすだれ状に埋め込ま
れ且つその端部が外部に導出された複数個の反対導電型
の埋込層（２’）を具備することを特徴とする半導体発
光装置。A first cladding layer (1, 1') having one conductivity type, an active layer (4), and a second cladding layer (5) having an opposite conductivity type are laminated, and the active layer (4) and It has an optical confinement layer (6) of one conductivity type formed on the side wall part of the second cladding layer (5) of the opposite conductivity type, and has an optical confinement layer (6) of one conductivity type formed in the sidewall part of the second cladding layer (5) of the opposite conductivity type, and has an optical confinement layer (6) formed in the first cladding layer (1, 1') in the form of a blind. 1. A semiconductor light emitting device comprising a plurality of buried layers (2') of opposite conductivity types, each of which is buried and whose end portions are led out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6612288A JPH01238182A (en) | 1988-03-18 | 1988-03-18 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6612288A JPH01238182A (en) | 1988-03-18 | 1988-03-18 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01238182A true JPH01238182A (en) | 1989-09-22 |
Family
ID=13306756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6612288A Pending JPH01238182A (en) | 1988-03-18 | 1988-03-18 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01238182A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5111471A (en) * | 1990-07-16 | 1992-05-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
| US5179040A (en) * | 1990-07-16 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor laser device |
-
1988
- 1988-03-18 JP JP6612288A patent/JPH01238182A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5111471A (en) * | 1990-07-16 | 1992-05-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
| US5179040A (en) * | 1990-07-16 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor laser device |
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