JP4357943B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus for performing surface treatment of various substrates such as a semiconductor wafer, a liquid crystal display substrate, a recording disk substrate, or a mask substrate, and more particularly, a dangerous drying fluid. The present invention relates to a substrate processing method and a substrate processing apparatus that perform a safe and high-quality surface drying process by reducing the amount of the substrate used.

Various substrates (hereinafter referred to as wafers) such as semiconductor wafers, liquid crystal display substrates, recording disk substrates, or mask substrates are treated with chemicals in order to clean their surfaces, and then pure water is used. And drying using an organic solvent such as isopropyl alcohol (hereinafter referred to as IPA).
In these processing steps, even when the drying process is completed, if even a small amount of water droplets remain on the wafer surface, it may cause generation of particles or watermarks on the wafer surface, leading to a decrease in wafer quality. become. For this reason, a substrate processing apparatus that prevents these contaminants from adhering to the wafer has been developed and widely used.

  This type of substrate processing apparatus is generally divided into a batch type substrate processing apparatus and a single wafer type substrate processing apparatus, and the batch type substrate processing apparatus has a feature that it can process a large number of wafers at a time and has a high processing capability. On the other hand, the single-wafer type substrate processing apparatus has a feature that high quality processing can be performed since the wafers are handled one by one. (For example, refer to Patent Documents 1 and 2.)

FIG. 14 is a cross-sectional view showing a single-wafer substrate processing apparatus described in Patent Document 1 below.
In this single wafer processing apparatus 100, a wafer W covered with a liquid 101 is placed in a centrifuge 102, and the liquid is removed from the surface of the wafer W by centrifugal separation by receiving a rotational motion in the centrifuge 102. Device. This apparatus is soluble before the liquid 101 is removed from the surface of the wafer W by centrifugation, that is, before the wafer is subjected to rotational movement in the centrifuge 102, and when dissolved in the liquid, the surface tension of the liquid is reduced. Such solvent vapor is jetted from the opening of the pipe 103 to the liquid 101 on the wafer W. IPA is used as the solvent, and the carrier gas is passed through the pipe 104 into the container 105 in which the IPA is stored to generate a mixed gas 106 of IPA and carrier gas. The mixed gas 106 is centrifuged. It is introduced into the machine 102.

FIG. 15 is a cross-sectional view showing a single wafer processing apparatus described in Patent Document 2 below.
The single wafer processing apparatus 110 forms a water film 112 on a wafer by loading a wafer W onto a rotatable chuck 111 and supplying pure water from one side of the chamber toward the wafer. Pure water supply lines 113a and 113b and gas injection means 114 capable of injecting various gases including a cleaning gas onto the wafer W.
And the gas injection means 114 is a small chamber approaching the surface of the gas injection tube 115a including the first nozzle N1 and the second nozzle N2 and the water film 102 attached to the gas injection tube 115a and injected onto the wafer W. The first gas G1 and the second gas G2 are injected into the gas injection tube 115a.

By the way, in the single wafer processing apparatus as described in the following Patent Documents 1 and 2, the wafer is rotated at a high speed, for example, at a high speed of 1500 to 2000 rpm, during the drying process of the wafer. This is performed by so-called high-speed spin drying, in which water droplets attached to the wafer surface are blown away.
However, it has been found that such high-speed spin drying also leaves contaminants such as particles and watermarks on the wafer surface.
The cause is mainly
(I) Adhesion of fine dust generated during rotation of the wafer in the drying process, or (ii) Inadequate cleaning, that is, inadequate cleaning with a so-called rinse solution. Among these causes, the above (i) fine dust adhesion is caused by the wind generated by high-speed rotation, and the fine dust flies in the air and adheres to the wafer. It is also conceivable that a large amount of dust generated from the rotating shaft passes through the seal and enters the chamber . Further, the above (ii) poor cleaning with the rinsing liquid originates from the fact that the rinsing liquid on the wafer is not originally removed, and in particular, this poor cleaning is the main cause of the increase in particles and the generation of watermarks.

The particle size of the water droplets adhering to the wafer surface is about 0.12 μm. If an attempt is made to remove a water droplet of this size by the centrifugal force by the above-mentioned high-speed spin drying, it is about 7.2 according to the ultra-high speed rotation and the calculation. It is considered that ultra-high speed rotation of × 10 ⁷ rpm is required. The water droplets are not only those having a particle size of about 0.12 μm, but also fine water droplets smaller than this particle size. Therefore, to remove these fine water droplets, the number of rotations must be further increased. However, a technology capable of realizing such ultra-high speed rotation has not yet been developed.

  Furthermore, IPA vapor is usually used as the drying fluid. Since this IPA vapor is easily flammable and has a risk of explosion, if such IPA vapor is blown onto a wafer that is rotating at high speed, it will ignite very easily and cause an explosion accident. Become.

Further, the drying fluid used in the substrate processing apparatuses disclosed in Patent Documents 1 and 2 is IPA vapor.
Since this IPA vapor is obtained by bubbling IPA with an inert gas, it contains a large amount of fine IPA liquid particles (hereinafter referred to as “mist”) in addition to the IPA gas less than the saturation concentration. It is. The size (size) and mass of the mist are larger and heavier than that of nitrogen gas. Therefore, the supply amount of the IPA mist is limited, and the replacement of water droplets by IPA is not efficiently and sufficiently performed.

  Also, the substrate processing apparatus used as a dry fluid by generating a mixed gas of organic solvent vapor and inert gas by heating and evaporating the organic solvent in an evaporation tank without bubbling the inert gas into the organic solvent. Is also known. (For example, refer to Patent Document 3).

The substrate processing apparatus described in the following Patent Document 3 is a mixture of an organic solvent vapor and an inert gas by heating and evaporating the organic solvent in an evaporation tank without bubbling the inert gas in the organic solvent. A gas is generated, and this mixed gas is separately diluted with an inert gas in the pipe, heated and kept warm, and injected from the injection nozzle.
In this substrate processing apparatus, the organic solvent vapor in the gas ejected from the pipe and the nozzle is completely a gas, and if such an organic solvent vapor that is completely gas is used, Since the size of the solvent molecule is much smaller than the size of the mist, there is no problem when the organic solvent mist as described above is used.

  However, even if the wafer is dried using completely vaporized organic solvent vapor, the concentration of the organic solvent vapor in the dry gas does not exceed the saturation concentration. The amount is small. Therefore, in the substrate processing apparatus disclosed in the following Patent Document 3, it takes a very long time to disperse the organic solvent vapor to every corner of a large wafer and replace the water droplets on the wafer surface. The number of watermarks formed on the substrate is reduced to almost zero, the generation of particles is eliminated, and a substrate processing method and apparatus having a high drying processing speed have not been provided.

  More specifically, if the total amount of IPA contained in the dry gas is the same, the number of mists decreases when the size of the IPA mist is large, and conversely, the number of mists when the size of the IPA mist is small. Will increase. In addition, if the size of the IPA mist is large, the mass is heavier and the movement speed is slow. Therefore, even if dry gas is supplied to the wafer in the drying process, the number of water droplets of the cleaning liquid adhering to the wafer surface and the number of IPA mist particles are not balanced. For example, if the number of IPA mist particles is less than the number of water droplets, Water droplets in the part remain without being replaced by IPA, which causes the generation of watermarks.

Japanese Patent No. 3095438 (paragraph [0025], FIG. 4) JP 2002-305175 A (paragraphs [0018] to [0020], FIG. 2) JP 11-191549 A (claims, paragraphs [0018] to [0024], FIG. 1)

  In recent years, the diameter of wafers has been increased from 200 mm to 300 mm, and more. Therefore, even with a relatively small wafer having a diameter of 200 mm or less, even if the generation of watermarks and particles can be suppressed, a wafer with a large diameter such as 300 mm generates water marks and particles. It has also been found that there is a limit to the processing at.

  In general, “vapor” means “gas”. However, in the technical field of wafer processing, those containing “fine liquid particles (mist)” in addition to “gas”, such as the above-mentioned dry gas, are also commonly used. Since it is expressed as “vapor” or “vapor” in the present specification and claims, what includes “fine liquid particles (mist)” in addition to “gas” is also expressed as “vapor”. And

  In light of the above-mentioned problems of these conventional techniques, the present inventors have searched for the cause of contaminants such as watermarks and particles remaining on the wafer surface, and the cause is the granular size of the vapor in the dry fluid so far. As a result, the present invention has been completed.

  Accordingly, a first object of the present invention is to provide a substrate processing method capable of performing a safe and high-quality surface treatment by reducing the amount of dangerous dry fluid used.

  The second object is to provide a substrate processing method capable of processing the outer peripheral edge of the substrate to be processed in addition to the first object.

  A third object is to provide a substrate processing apparatus capable of performing a safe and high-quality surface treatment by reducing the amount of dangerous dry fluid used.

  The fourth object is to provide a substrate processing apparatus capable of processing the outer peripheral edge of the substrate to be processed in addition to the third object.

  The substrate processing method according to claim 1 of the present application is a substrate processing method for performing a surface treatment by spraying a processing fluid onto a substrate to be processed that is rotated in a substantially horizontal state, and when the substrate to be processed is dried, A dry fluid containing an organic solvent vapor containing submicron mist is used as the processing fluid, and the dry fluid is sprayed on the front surface and / or the back surface of the substrate to be processed.

  According to a second aspect of the present invention, in the substrate processing method according to the first aspect, the dry fluid is substantially at the center of the front surface and / or the back surface of the substrate to be processed from the axis of the rotation axis at the center of the substrate to be processed. It is characterized by spraying on the part.

  According to a third aspect of the present invention, in the substrate processing method according to the first or second aspect, the dry fluid comprises at least two types of dry fluids, and these dry fluids are switched and supplied.

  According to a fourth aspect of the present invention, in the substrate processing method according to the third aspect, one type of the drying fluid is a mixed gas of the vapor of the organic solvent and an inert gas, and the other is an inert gas. It is characterized by.

  The invention of claim 5 is the substrate processing method according to claim 4, wherein the organic solvent is isopropyl alcohol, diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, It is at least one selected from the group consisting of tetrahydrofuran.

  The invention of the substrate processing method according to claim 6 of the present application is a substrate processing method for performing surface treatment by spraying a processing fluid onto a substrate to be processed that is rotated in a substantially horizontal state, and when the substrate to be processed is dried, A drying fluid containing a vapor of an organic solvent containing submicron mist is used as the processing fluid, and the drying fluid is sprayed from the outer periphery of the substrate to be processed to the front surface and / or the back surface of the substrate to be processed. And

  According to a seventh aspect of the present invention, in the substrate processing method according to the sixth aspect, the dry fluid comprises at least two types of dry fluids, and these dry fluids are switched and supplied.

  The invention according to claim 8 is the substrate processing method according to claim 7, wherein one kind of the drying fluid is a mixed gas of the vapor of the organic solvent and an inert gas, and the other is an inert gas. It is characterized by.

  The invention of claim 9 is the substrate processing method according to claim 8, wherein the organic solvent is isopropyl alcohol, diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, It is at least one selected from the group consisting of tetrahydrofuran.

  The invention of the substrate processing method according to claim 10 of the present application is a substrate processing method for performing a surface treatment by spraying a processing fluid on a substrate to be processed that is rotated in a substantially horizontal state, and when the substrate to be processed is dried, A dry fluid containing an organic solvent vapor containing submicron mist is used as the processing fluid, and the drying fluid is sprayed on the front surface and / or back surface of the substrate to be processed, and at the same time from the outer periphery of the substrate to be processed. Is sprayed onto the front surface and / or back surface of the substrate to be processed.

  The invention of claim 11 is the substrate processing method according to claim 10, wherein the dry fluid is substantially at the center of the surface and / or the back surface of the substrate to be processed from the axis of the rotation axis in the central portion of the substrate to be processed. It is characterized by spraying on the part.

  According to a twelfth aspect of the present invention, in the substrate processing method according to the tenth or eleventh aspect, the dry fluid includes at least two types of dry fluids, and these dry fluids are switched and supplied.

  According to a thirteenth aspect of the present invention, in the substrate processing method according to the twelfth aspect, one type of the drying fluid is a mixed gas of the vapor of the organic solvent and an inert gas, and the other is an inert gas. It is characterized by.

  The invention of claim 14 is the substrate processing method according to claim 13, wherein the organic solvent is isopropyl alcohol, diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, It is at least one selected from the group consisting of tetrahydrofuran.

  A substrate processing apparatus according to a fifteenth aspect of the present invention includes a substrate holding / rotating unit that rotates a substrate to be processed while being substantially horizontally held, an ejecting unit that ejects a processing fluid onto the substrate to be processed, and the ejecting unit. And a processing fluid supply means for supplying a processing fluid to the substrate processing apparatus, wherein the spraying means has first and / or second spray nozzles, and the first spray nozzle is a surface of the substrate to be processed. The second spray nozzles are respectively disposed below and the drying fluid containing organic solvent vapor including submicron mist is supplied from the processing fluid supply means when the substrate to be processed is dried. It supplies to an injection means, and the said drying fluid is sprayed on the surface and / or back surface of the said to-be-processed substrate from the said 1st and / or said 2nd injection nozzle.

  According to a sixteenth aspect of the present invention, in the substrate processing apparatus according to the fifteenth aspect, the first and second injection nozzles are on an axis of a rotation axis of the central portion of the substrate to be processed, and the first injection The nozzle is disposed above the surface of the substrate to be processed and the second spray nozzle is disposed below, and the dry fluid is supplied from the first and / or second spray nozzle to the surface of the substrate to be processed and / or Or it sprays on the center part of a back surface, It is characterized by the above-mentioned.

  According to a seventeenth aspect of the present invention, in the substrate processing apparatus according to the fifteenth or sixteenth aspect, the dry fluid is composed of at least two types of dry fluid, and these dry fluids are switched and supplied.

  According to an eighteenth aspect of the present invention, in the substrate processing apparatus of the seventeenth aspect, one type of the drying fluid is a mixed gas of an organic solvent vapor and an inert gas, and the other is an inert gas. Features.

  The invention of claim 19 is the substrate processing apparatus according to claim 18, wherein the organic solvent is isopropyl alcohol, diacetone alcohol, 1-methoxy 2-propanol, ethyl glycol, 1-propanol, 2-propanol, tetrahydrofuran. It is at least one selected from the group consisting of

  The invention of a substrate processing apparatus according to claim 20 of the present application includes a substrate holding and rotating means for rotating the substrate to be processed while being held substantially horizontally, an ejecting means for ejecting a processing fluid onto the substrate to be processed, and the ejecting means. And a processing fluid supply means for supplying a processing fluid to the substrate processing apparatus, wherein the spraying means has a third spray nozzle, and the third spray nozzle is arranged on an outer peripheral edge of the substrate to be processed. When the substrate to be processed is dried, a dry fluid containing an organic solvent vapor containing mist of submicron size is supplied from the processing fluid supply means to the injection means, and the dry fluid is supplied to the third injection. It sprays on the surface and / or back surface of the to-be-processed substrate from a nozzle.

  According to a twenty-first aspect of the present invention, in the substrate processing apparatus of the twentieth aspect, the third spray nozzle is composed of one or a plurality of spray nozzles, and these spray nozzles are the outer peripheral edges of the substrate to be processed. It is characterized in that it is arranged close to and at a predetermined interval.

  According to a twenty-second aspect of the present invention, in the substrate processing apparatus according to the twenty-first aspect, the plurality of spray nozzles are located on a horizontal line passing through a substantially central portion of the substrate to be processed. The other injection nozzle is provided in the vicinity of the outer peripheral edge of the substrate to be processed, and the other injection nozzle is adjacent to the outer peripheral edge on the opposite side of the rotation direction of the substrate to be processed from the one injection nozzle. Are arranged adjacent to each other at a predetermined interval from each other.

  According to a twenty-third aspect of the present invention, in the substrate processing apparatus according to the twenty-first or twenty-second aspect, the plurality of spray nozzles are substantially equal in distance between their tip portions and the outer peripheral edge of the substrate to be processed. 24. The substrate processing apparatus according to claim 23, wherein the substrate processing apparatuses are arranged adjacent to each other.

  According to a twenty-fourth aspect of the present invention, in the substrate processing apparatus according to any one of the twenty-second to twenty-third aspects, the dry fluid is composed of at least two types of dry fluids, and these dry fluids are switched and supplied. Features.

  According to a twenty-fifth aspect of the present invention, in the substrate processing apparatus of the twenty-fourth aspect, one type of the drying fluid is a mixed gas of an organic solvent vapor and an inert gas, and the other is an inert gas. Features.

  The invention of claim 26 is the substrate processing apparatus according to claim 25, wherein the organic solvent is isopropyl alcohol, diacetone alcohol, 1-methoxy 2-propanol, ethyl glycol, 1-propanol, 2-propanol, tetrahydrofuran. It is at least one selected from the group consisting of

  A substrate processing apparatus according to a twenty-seventh aspect of the present invention includes a substrate holding / rotating unit that rotates a substrate to be processed while being held substantially horizontally, an ejecting unit that ejects a processing fluid onto the substrate to be processed, and the ejecting unit. In the substrate processing apparatus provided with the processing fluid supply means for supplying the processing fluid to the first jetting means, the jetting means includes first and / or second jet nozzles and a third jet nozzle. The nozzle is disposed above the surface of the substrate to be processed, the second spray nozzle is disposed below, and the third spray nozzle is disposed on the outer periphery of the substrate to be processed. A drying fluid containing a vapor of an organic solvent containing submicron mist is supplied from the processing fluid supply means to the injection means, and the dry fluid is supplied from the first and / or second injection nozzles to the target. Processing substrate Surface and / or back surface, and wherein the blown from each of the third injection nozzles to the surface and / or back surface of the substrate to be processed.

  According to a twenty-eighth aspect of the present invention, in the substrate processing apparatus of the twenty-seventh aspect, the first and second injection nozzles are on an axis of a rotation axis of a central portion of the substrate to be processed, and the first injection The nozzle is disposed above the surface of the substrate to be processed, the second spray nozzle is disposed below, and the dry gas is supplied from the first and / or second spray nozzle to the surface of the substrate to be processed and / or It sprays on the center part of the back.

  According to a twenty-ninth aspect of the present invention, in the substrate processing apparatus of the twenty-seventh aspect, the third spray nozzle is composed of one or a plurality of spray nozzles, and these spray nozzles are the outer peripheral edges of the substrate to be processed. It is characterized in that it is arranged close to and at a predetermined interval.

  The invention of claim 30 is the substrate processing apparatus according to claim 29, wherein the plurality of spray nozzles are located on a horizontal line passing through substantially the center of the substrate to be processed, The other injection nozzle is provided in the vicinity of the outer peripheral edge of the substrate to be processed, and the other injection nozzle is adjacent to the outer peripheral edge on the opposite side of the rotation direction of the substrate to be processed from the one injection nozzle. Are arranged adjacent to each other at a predetermined interval from each other.

  According to a thirty-first aspect of the present invention, in the substrate processing apparatus according to the twenty-ninth or thirty-third aspect, the plurality of spray nozzles have distances between their tip portions and the outer peripheral edge of the substrate to be processed. It is characterized by being arranged adjacent to each other.

  According to a thirty-second aspect of the present invention, in the substrate processing apparatus according to any one of the twenty-seventh to thirty-first aspects, the dry fluid is composed of at least two types of dry fluids, and these dry fluids are switched and supplied. Features.

  According to a thirty-third aspect of the present invention, in the substrate processing apparatus of the thirty-second aspect, one type of the drying fluid is a mixed gas of an organic solvent vapor and an inert gas, and the other is an inert gas. Features.

  34. The substrate processing apparatus according to claim 33, wherein the organic solvent is isopropyl alcohol, diacetone alcohol, 1-methoxy 2-propanol, ethyl glycol, 1-propanol, 2-propanol, tetrahydrofuran. It is at least one selected from the group consisting of

According to the first aspect of the present invention, since the dry fluid containing the vapor of the organic solvent containing the submicron mist is used, the submicron organic solvent is applied to the water droplets attached to the substrate to be processed. By uniformly penetrating and reducing the surface tension, water droplets can be easily removed from the substrate to be processed.
As a result, the amount of dry fluid used can be reduced, and the residue of contaminants can be eliminated from the substrate to be processed.
Further, this method does not require the substrate to be rotated at a high speed, enables the wafer to be dried with a small amount of drying fluid, and avoids the risk of ignition and explosion even when a dangerous organic solvent is used.

  According to the second aspect of the present invention, in addition to the effect of the first aspect, the dry fluid sprayed on the front surface and / or the back surface of the substrate to be processed is substantially the same as the substrate to be processed. The surface and / or the back surface of the substrate to be processed is moved while diffusing substantially uniformly from the central portion to the outer peripheral edge. Therefore, waste of the drying fluid is eliminated and the drying process can be performed efficiently.

  According to the invention described in claim 3, since at least two kinds of drying fluids can be switched and sprayed onto the substrate to be processed, by selecting and switching the optimum drying fluid according to the application, high quality and efficiency can be achieved. A good drying process is possible.

According to the invention described in claim 4, since the vapor of the organic solvent contains mist of submicron size, it consists of a mixed gas of the organic solvent vapor containing this submicron mist and an inert gas. By spraying the drying fluid onto the substrate to be processed, the organic solvent vapor penetrates into the water droplets on the surface of the substrate to be processed, and replaces the water droplets with the organic solvent. By the replacement of the organic solvent vapor, the surface tension of the water droplets is reduced, and the water droplets are efficiently removed. Further, the organic fluid remaining on the substrate to be processed can be efficiently removed by spraying the dry fluid made of the inert gas onto the substrate to be processed.

  According to the invention of claim 5, the organic solvent is at least selected from the group consisting of isopropyl alcohol, diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. By using one kind, it is possible to process the substrate to be processed satisfactorily by utilizing the characteristics of each solvent.

  According to the invention described in claims 6 to 9, in addition to the effects described in claims 1 to 5, water droplets on the outer peripheral edge of the substrate to be processed, that is, so-called edge portions can be effectively removed. Become.

  According to the invention described in claims 10 to 14, the drying fluid is sprayed from the front surface and / or back surface of the substrate to be processed and the outer peripheral edge of the substrate to be processed to the surface and / or back surface of the substrate to be processed. It is possible to process the front surface and / or back surface of the processing substrate and the outer peripheral edge of the processing substrate, and further processing the front surface and / or back surface of the processing substrate from the outer peripheral edge. The effect of the said Claims 1-9 can be show | played by these processes.

  According to invention of Claim 15-19, the substrate processing apparatus which can implement the substrate processing method of the said Claims 1-5 is provided.

  According to invention of Claim 20-26, the substrate processing apparatus which can implement the substrate processing method of the said Claim 6-9 is provided.

  According to invention of Claims 21-34, the substrate processing apparatus which can implement the substrate processing method of the said Claims 10-14 is provided.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS The best mode for carrying out the invention will be described below with reference to the drawings. However, the embodiment shown below exemplifies a substrate processing method and a substrate processing apparatus for embodying the technical idea of the present invention, and is not intended to specify the present invention. Other embodiments within the scope of the claims are equally applicable.

  FIG. 1 is a schematic view showing a substrate processing apparatus according to a first embodiment of the present invention together with a piping diagram, and FIG. 2 is an enlarged front view showing a substrate holding and rotating mechanism and an injection nozzle installed in the processing chamber of FIG.

  As shown in FIG. 1, the substrate processing apparatus 10 includes a processing chamber 20 for processing various substrates (hereinafter referred to as wafers) W such as a semiconductor wafer, a liquid crystal display substrate, a recording disk substrate, or a mask substrate. The drying fluid supply unit 40 supplies the drying fluid to the processing chamber 20. In addition to the above-described dry fluid supply unit, the substrate processing apparatus 10 supplies various chemical solutions and rinse solutions to the processing chamber 20 to process and clean the wafer W, as well as chemical solutions and Although the rinse liquid supply processing part is provided, since these already use a well-known thing, these are abbreviate | omitted.

The processing chamber 20 is formed of a narrow and closed small chamber, a so-called chamber, in which a turntable 31 for holding and rotating the wafer W substantially horizontally and an injection nozzle 35 for spraying a dry fluid onto the wafer W are provided. Contained. The chamber 20 is supported by a plurality of support columns 22 ₁ and 22 ₂ and is installed at a predetermined height.
The chamber 20 is connected to air conditioning equipment (not shown), clean air is supplied from the air inlet 23, and the air in the chamber 20 is appropriately discharged from the air outlet 24 so that the inside of the chamber 20 is air-conditioned. Further, the exhaust discharged from the exhaust port 24 is sent to an exhaust processing facility for processing.
A plurality of discharge ports 22 ₁ , 22 ₂ are formed at the bottom of the chamber 20, and each of the discharge ports 22 ₁ , 22 ₂ is connected to a waste liquid treatment facility (not shown) by a discharge pipe 22 ₃ and is used. Various processing liquids and the like are processed in this waste liquid processing facility.

A plurality of chuck pins 31 _{1 to} 31 _n are erected on the upper surface of the turntable 31, and each chuck pin 31 _{1 to} 31 _n has a holding portion 31 ′ _{1 to} 31 that holds the wafer W at its tip. ' _n is formed.
The rotation center of the back surface of the turntable 31 is fixed to the rotary shaft 32, the rotary shaft 32, for example, the rotary drive unit 34 ₁ such as a motor is coupled, the rotary shaft 32 by the rotational driving unit 34 ₁ Is done. Therefore, when the rotation shaft 32 by the driving force from the rotary drive unit 34 ₁ is rotated, the turntable 31 is rotated in a predetermined direction, the wafer W held by a pin 31 ₁ to 31 _n of the plurality of rotate in a horizontal plane .

The injection nozzle 39 is attached to the lift / rotation mechanism 35. Lifting-pivoting mechanism 35 includes a support shaft 36 provided along the vertical direction on the outside of the turntable 31, the elevation drive unit 34 ₂ for vertically moving the support shaft 36, horizontally from the upper end of the support shaft 36 The arm portion 37 extends in the direction.

The arm portion 37 is formed of a duct having a volume capable of accommodating a plurality of pipes, and a pipe 38 for supplying a drying fluid is housed in the duct, and an injection nozzle 39 is coupled to a distal end portion of the pipe 38. Yes.
The spray nozzle 39 is moved almost right above the center of the wafer W during the wafer drying process, and the distance from the wafer W is adjusted. The adjustment at this time is performed by the lift / rotation mechanism 35. Its regulation, the support shaft 36 is rotated, the injection nozzle 39 was adjusted so as to come into position substantially directly above the center position of the wafer W, then the injection nozzle 39 is moved up and down by the elevation drive unit 34 ₂ The distance from the wafer W is adjusted. Incidentally, the spray nozzle 39 can be moved not only directly above the center of the wafer W but also to any part of the surface of the wafer W, and the dry fluid can be sprayed from any part of the surface of the wafer W. It is preferable.

  The drying fluid supply unit 40 includes a steam generation tank 45 that generates a drying fluid containing submicron mist, a heating tank (water bath) 46 that heats the organic solvent in the steam generation tank 45, and a steam generation tank 45. An organic solvent supply source 43 that supplies the organic solvent, an inert gas supply source 42 that generates (bubbles) bubbles in the organic solvent stored in the vapor generation tank 45, and an inert gas that supplies the inert gas to the injection nozzle 39. And a gas supply source 41.

As the organic solvent, an organic solvent, for example, isopropyl alcohol (IPA), which easily penetrates into water droplets adhering to the surface of the wafer W and reduces the surface tension of the water droplets is used. In addition to this IPA, the organic solvent is appropriately selected from the group consisting of organic compounds such as diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. Is done.
An inexpensive nitrogen gas N ₂ is used as the inert gas, but in addition to this nitrogen gas N ₂ , argon, helium, or the like may be appropriately selected and used.

The steam generation tank 45 and the inert gas supply source 41 are connected to the processing chamber 20 by piping. The steam generation tank 45 and the injection nozzle 39 in the processing chamber 20 are connected to each other by pipes 41 ₂ and 41 ₃ by inserting a valve V ₂ in the middle, and the inert gas supply source 41 and the injection in the processing chamber 20. The nozzle 39 is connected to the nozzle 39 by pipes 41 ₁ and 41 ₂ with the valve V ₁ inserted in the middle. Each of the pipes 41 _{1 to} 41 ₃ is provided with a heater 41 _{H on the} outer peripheral surface, keeps the dry fluid passing through each pipe, and the temperature of the dry fluid supplied from the steam generation tank 45 and the inert gas supply source 41 is high. Do not drop. Each spray nozzle 39 is also provided with a heater (not shown). Further, the inert gas supplied from the inert gas supply source 42 to the steam generation tank 45 is regulated by the control valve P, and the temperature control in the steam generation tank 45 is performed by the control device T (regulator, temperature sensor). Is done by.

In order to generate a dry fluid containing submicron mist, an organic solvent, for example, IPA is first supplied from the organic solvent supply source 43 into the vapor generation tank 45 and stored. The stored IPA is heated by the hot water stored in the heating tank 46 in the steam generation tank 45. Next, an inert gas, for example, nitrogen gas N _2, is supplied to the steam generation tank 45 from the inert gas supply source 42 to generate (bubble) bubbles in the stored and heated IPA. At this time, the IPA is heated to about 50 ° C. By heating at this temperature, IPA vapor containing submicron mist is generated from the vapor generation tank 45. The generated IPA vapor is supplied to the processing chamber 20 through the insulated pipe. At this time, the piping is kept at a temperature of about 80 ° C. so that submicron mist does not aggregate.

Hereinafter, with reference to FIGS. 1-4, the drying process of the wafer W is demonstrated using the said substrate processing apparatus.
FIG. 3 is a timing chart showing the supply time of the drying fluid, and FIG. 4 is an explanatory view schematically showing the drying process. FIG. 3A shows the surface state of the wafer immediately after cleaning with the rinse liquid. FIG. 4B is a diagram showing the surface state of the wafer when the dry fluid is sprayed, and FIG. 4C is a diagram showing the surface state of the wafer when the inert gas is sprayed. is there.

First, transported by a transport robot (not shown) of the wafer W, held by the chuck pins ₃₁ 1 to 31 _n of the holding unit 31 _'2 to 31' _n, by operating the rotational driving unit 34 _1, the turntable is rotated 31 .

  Next, using a known processing apparatus (not shown), various chemical solutions are supplied to the surface of the rotating wafer W to perform chemical treatment, and then the wafer W is washed with a rinse solution.

After performing the above process a predetermined number of times, the process proceeds to the drying process of the wafer W.
In this drying process, first, the lifting / lowering drive unit 35 is operated to move the spray nozzle 39 to a position just above the center of the wafer W, thereby adjusting the distance from the wafer W to a predetermined distance. Then, by operating the rotational driving unit 34 _1, the turntable is rotated 31 connected to the rotary shaft 32 together with the wafer W. Thereafter, the drying fluid is sprayed from the spray nozzle 39 onto the rotating wafer W.

At this time, two types of drying fluids are used as the drying fluid, these drying fluids are supplied from the drying fluid supply unit 40 to the injection nozzle 39, and are injected from the injection nozzle 39 onto the wafer W. When switching between the two types of dry fluids is performed at the timing shown in FIG. 3A, first, the valves V ₁ and V ₂ are opened, and the IPA including the submicron mist generated in the steam generation tank 45 is provided. A mixed gas obtained by mixing mist and nitrogen gas from an inert gas supply source 41 is supplied to the injection nozzle 39 and blown onto the wafer W from the injection nozzle 39.

In more detail the effect of this time, the surface of the wafer W immediately after being washed with pure water, as shown in FIG. 4 (a), although a plurality of water droplets w ₀ is attached, mixed gas m The IPA mist contained in the mixed gas m permeates into the water droplets w ₀ on the surface of the wafer W and reduces the surface tension of the water droplets w ₀ . Therefore, the penetration of the IPA mist causes the water droplet w ₀ to be in a flat state, and the IPA mist is condensed in the water droplet. Further, the water drop w ₀ having a reduced surface tension is blown off to the outside of the flat spray nozzle by the spray of the mixed gas and the centrifugal force generated by the rotation of the wafer W, and is removed. (See FIG. 4B.)

The supply of the mixed gas m after a predetermined time T _1, stopping the supply of the mixed gas m closes the valve V _2, supplying nitrogen gas n, which is heated from the inert gas supply source 41 to the injection nozzle 39, the wafer a predetermined period of time _{T 2} blown to the W. At this time, water droplets w ₀ have already been almost blown off on the wafer surface, and only a thin IPA liquid film with condensed IPA mist remains on the wafer surface. The film is blown off or vaporized, and the processing of the wafer surface is completed. (See FIG. 4C.)

The switching between the two types of drying fluid may be performed at the timing shown in FIG. That is, first, after supplying the inert gas (nitrogen gas) from the inert gas supply source 41 for a predetermined time t ₁ , the IPA mist including the submicron mist and the nitrogen gas are supplied into the pipes 41 ₂ , 41. ₃ is supplied to the injection nozzle 39. Then, the supply of the mixed gas after the predetermined time t ₂ continues, stops supply of the IPA mist, the predetermined time t ₃ supplies only inert gas again. Incidentally, the switching supply of the inert gas and the mixed gas is performed by opening and closing the valves V ₁ and V ₂ .

When the drying process is performed at the timing shown in FIG. 3B, it is possible to blow out a relatively large water droplet out of the water droplet w ₀ adhering to the substrate before replacing the mixed gas with the mixed gas. Drying can be performed.

<Experimental example>
In order to confirm the quality of the wafer in the drying process, an experiment was performed under the following conditions.
A wafer W having a diameter of 8 inches (about 20 cm) was used, IPA was heated to 50 ° C., nitrogen gas was supplied to the heated IPA at a flow rate of 40 L / min, and bubbled to generate a mixed gas. As a result of the measurement, it was confirmed that the generated mixed gas contained submicron size IPA mist. The temperature of the piping was set to about 80 ° C. so that the submicron mist does not aggregate.

First, the turntable was rotated at 200 rpm, and pure water was supplied to the surface of the wafer W for 15 seconds to clean the wafer W. Thereafter, the rotational speed of the turntable was increased to 500 rpm, and in order to remove water droplets adhering to the surface of the wafer W, nitrogen gas was blown for 5 seconds to blow off the water droplets.
Next, a mixed gas containing IPA mist was sprayed onto the surface of the wafer W at a flow rate of 40 L / sec for 30 seconds. Thereafter, the spraying of the mixed gas was stopped, and nitrogen gas was sprayed for 20 seconds to finish the surface treatment of the wafer W.

Therefore, when the state of water droplet adhesion on the wafer surface was examined, no water droplet residue was found.
It was confirmed that the dry fluid using this IPA mist can remove water droplets from the wafer at a low speed of 500 rpm. As a result, in this substrate processing apparatus, since the wafer can be satisfactorily dried even at a low speed, the IPA is not ignited, that is, no explosion-proof equipment is required, and a high-quality drying process is performed with an inexpensive apparatus. It can be performed.

  5 is a schematic diagram showing a substrate processing apparatus according to a second embodiment of the present invention together with a piping diagram, and FIG. 6 is an enlarged front view showing a substrate holding and rotating mechanism and an injection nozzle installed in the processing chamber of FIG. The substrate processing apparatus 10A is different from the substrate processing apparatus 10 described above in that it can process the back surface of the wafer W. Therefore, since the other configuration is the same, the description of the configuration common to both is omitted, and only the different configuration will be described.

To process the rear surface of the wafer W, even providing the injection nozzle 39 ₁ in a substantially central portion of the rear surface of the wafer W. The injection nozzle 39 ₁ is provided on top of the rotary shaft 32. Injection nozzles 39 ₁ formed in the top portion, through the inside of the rotary shaft 32, is connected to the pipe 41 _4. The injection nozzle 39 ₁ is attached a heater (not shown), is further attached a heater 41 _H is also in the pipe 41 _4, drying fluid passing through the pipe 41 _H and the injection nozzle 39 ₁ is kept warm. Incidentally, substantially the same place as the injection nozzle 39 _1, the injection nozzle is provided for injecting the chemical solution and rinse solution, the processing of the wafer W back surface by injecting a chemical liquid and the rinse liquid from these spray nozzles is performed, the back surface Since the processing is performed by a known method, the description thereof is omitted.

After completing the cleaning of the wafer W back surface by chemical and the rinse liquid, dry fluid to the injection nozzle 39 is drying fluid at the same time the injection nozzle 39 ₁ when supplied is supplied through the pipe 41 ₄ through the pipe 41 _2, the injection nozzle 39 ₁ A dry fluid containing IPA mist is sprayed from the wafer W to dry the back surface of the wafer W simultaneously with the wafer surface. Note that the process of removing water droplets from the wafer W is the same as the process on the surface of the wafer W, and the description thereof is omitted because it overlaps.

7 is a schematic diagram showing a substrate processing apparatus according to a third embodiment of the present invention together with a piping diagram, FIG. 8 is an enlarged front view showing a substrate holding and rotating mechanism and an injection nozzle installed in the processing chamber of FIG. 7, and FIG. It is a top view at the time of providing two or more injection nozzles provided in a side part.
Each of the substrate processing apparatuses 10 and 10A is an apparatus that performs a drying process on the front surface and / or back surface of the wafer W, but the drying process can also be performed by spraying a drying fluid from the outer peripheral edge of the wafer W, a so-called edge portion. it can.
The substrate processing apparatus 10B is an apparatus that can perform processing from the outer edge portion of the wafer W. In this substrate processing apparatus 10B, the configuration of the processing chamber 20, the drying fluid supply unit 40, etc. is the same as that of the substrate processing apparatus 10, 10A, and therefore, description of common parts is omitted, and only different configurations are described. .

The substrate processing apparatus 10 </ _b > B processes the edge portion of the wafer W from the edge portion and the front and / or back surface of the wafer W by disposing the injection nozzle 392 at a position close to the outer peripheral edge of the wafer W. It is what I did.
The injection nozzle 39 _2, be on a horizontal line passing through approximately the center portion of the wafer W, which is substantially horizontally held on a turntable 31 provided in close proximity to an edge portion of the wafer.

The injection nozzle 39 _2, one or a plurality are provided in proximity to the edge portion. When the number of the spray nozzles is one, the arrangement is on a horizontal line passing through the substantially central portion of the wafer W held almost horizontally, and is provided close to the edge portion. If a plurality, the plurality of injection nozzles _{39 21,} 39 22, _{39 23} as shown in FIG. 9, respectively provided on the outer peripheral edge of the wafer W. A plurality of injection nozzles _{39 21,} 39 22, _{39 23,} it is preferable to arrange collectively in one place. When arranged together in the one position, the first injection nozzle _{39 21,} on a horizontal line passing through approximately the center portion of the wafer W, the second, third injection nozzle ₃₉ 22, _{39 23,} first and the injection nozzle 39 ₂₁ as a reference, is provided adjacent at predetermined intervals in a direction opposite to the rotation direction of the wafer W.

Further, a plurality of injection nozzles _{39 21,} 39 22, _{39 23,} by changing the length of each injection port, it is preferable that as the distance between the outer peripheral edge of the wafer W are equal, each injection nozzle 39 _21, the ₃₉ 22, _{39 23,} fan jet nozzle for ejecting a fan is used.

After completion of the surface and / or back surface of the cleaning of the wafer W by the chemical and the rinse liquid, ₂ to dry fluid injection nozzle 39 is supplied through a pipe 41 _3, and inject dry fluid containing IPA mist from the injection nozzle 39 _2, Drying of the outer periphery of the wafer W is performed. At this time, by moving the mounting position and mounting direction of the injection nozzle 39 _2, drying of the surface and / or back surface of the wafer W can be performed. Note that the process of removing water droplets from the wafer W is the same as the process on the surface of the wafer W, and the description thereof is omitted because it overlaps.

10 is a schematic diagram showing a substrate processing apparatus according to a fourth embodiment of the present invention together with a piping diagram, and FIG. 11 is an enlarged front view showing a substrate holding and rotating mechanism and an injection nozzle installed in the processing chamber of FIG.
This substrate processing apparatus 10C is characterized in that it can process the surface and outer peripheral edge of the wafer W, so-called edge portions. Therefore, since the other configurations are the same, the description of the parts common to both will be omitted, and only different configurations will be described.
The substrate processing apparatus 10c is in the upper part of the wafer W, for example, is provided an injection nozzle 39 used in Example 1, it is the injection nozzle 39 ₂ disposed further close to the outer periphery position.
Installation of the injection nozzle 39, 39 ₂ is the same as the attachment of the injection nozzle 39, 39 ₂ of Examples 1 and 2.

After completion of the surface and / or back surface of the cleaning of the wafer W by the chemical and the rinse liquid, the injection nozzle 39, 39 ₂ to the drying fluid is supplied through a pipe 41 _3, including IPA mist from the injection nozzle 39, 39 ₂ A drying fluid is sprayed to dry the outer periphery of the wafer W. At this time, by moving the mounting position and mounting direction of the injection nozzle 39 _2, drying of the surface and / or back surface of the wafer W can be performed. Note that the process of removing water droplets from the wafer W is the same as the process on the surface of the wafer W, and the description thereof is omitted because it overlaps.

FIG. 12 is a schematic view showing a substrate processing apparatus according to a fifth embodiment of the present invention together with a piping diagram, and FIG. 13 is an enlarged front view showing a substrate holding and rotating mechanism and an injection nozzle installed in the processing chamber of FIG.
This substrate processing apparatus 10D is different from the first to fourth embodiments described above in that the injection nozzles are provided in the three directions of the upper, lower, and outer peripheral edges of the substrate. The parts to be assigned are denoted by common reference numerals, and detailed description thereof will be omitted.

The substrate processing apparatus 10D includes a jet nozzle 39 located just above the substantially central portion of the wafer W, and the injection nozzle 39 ₁ positioned substantially at the center of the back surface of the wafer W, held substantially horizontally on the turntable 31 by the injection nozzle 39 ₂ located on the horizontal line passing through the substantially central portion of the wafer W was, so as to dry the substrate.

This each injection nozzle 39 _1, 39 ₂ of the drying process, is already omitted because it is similar to that described above, if That raise as thus drying fluid from three directions is supplied, the wafer Thus, the front surface, the back surface, and the outer peripheral edge can be satisfactorily dried, and more accurate wafer drying can be performed.

Incidentally addition to the above Examples 1 to 5, for example, only the injection nozzle 39 ₁ located on the back surface of the wafer W is or the substrate processing apparatus provided, the injection nozzle 39 ₁ located on the back surface of the wafer W, the turntable 31 Although two of the injection nozzle 39 ₂ located on the horizontal line passing through the substantially central portion of the wafer W, which is substantially horizontally held can be used suitably also a substrate processing device provided above, where the explanation is duplicated Therefore, it is omitted.

  Furthermore, in the substrate processing apparatus described in the fifth embodiment, a plurality of spray nozzles 39, 39 are provided. ₁ , 39 ₂ 41 for supplying dry fluid to the pipe ₂ , 41 ₄ , 41 ₅ If a valve is provided in the middle of each, a substrate processing apparatus capable of changing the spray nozzle to be used as appropriate according to the type of wafer and the cleaning position can be obtained, as shown in Examples 1 to 5 above. In addition, it is possible to provide a substrate processing apparatus capable of performing all kinds of processes by controlling valves.

The schematic diagram which showed the substrate processing apparatus of Example 1 of this invention with the piping figure The enlarged front view which shows the board | substrate holding | maintenance rotation mechanism installed in the processing chamber of FIG. Timing chart showing dry fluid supply time It is explanatory drawing which showed the drying process typically, Comprising: The figure (a) is a figure which showed the surface state of the wafer immediately after washing | cleaning by the rinse liquid, The figure (b) is when a dry fluid is sprayed. The figure which showed the surface state of the wafer, The figure (c) was a figure which showed the surface state of the wafer when an inert gas was sprayed. The schematic diagram which showed the substrate processing apparatus of Example 2 of this invention with the piping figure The enlarged front view which shows the substrate holding | maintenance rotation mechanism installed in the processing chamber of FIG. The schematic diagram which showed the substrate processing apparatus of Example 3 of this invention with the piping figure The enlarged front view which shows the board | substrate holding | maintenance rotation mechanism installed in the processing chamber of FIG. Plan view when multiple injection nozzles are provided on the side The schematic diagram which showed the substrate processing apparatus of Example 4 of this invention with the piping figure The enlarged front view which shows the board | substrate holding | maintenance rotation mechanism and injection nozzle which are installed in the processing chamber of FIG. The schematic diagram which showed the substrate processing apparatus of Example 5 of this invention with the piping figure The enlarged front view which shows the board | substrate holding | maintenance rotation mechanism and injection nozzle which are installed in the processing chamber of FIG. Sectional drawing which shows the single wafer type | mold substrate processing apparatus described in patent document 1 Sectional drawing which shows the single-wafer | sheet-fed substrate processing apparatus described in patent document 2

Explanation of symbols

10, 10A to 10D Substrate processing apparatus 20 Processing chamber
23 air inlet 24 outlet 31 turntable 32 rotating shaft 35 elevating and rotating mechanism 38 the pipe 39 _1, 39 ₂ injection nozzle 40 dry fluid supply unit 41 and the inert gas supply source ₄₁ 1-41 ₄ pipe 41 _H heater 43 Organic solvent supply section 45 Steam generation tank

Claims (34)

In a substrate processing method in which a surface treatment is performed by spraying a processing fluid onto a substrate to be processed that rotates while being held almost horizontally,
When the substrate to be processed is dried, a drying fluid containing a vapor of an organic solvent containing submicron mist is used as the processing fluid, and the drying fluid is sprayed on the front surface and / or the back surface of the substrate to be processed. Substrate processing method.   The substrate processing method according to claim 1, wherein the dry fluid is sprayed from the axis of the rotation axis in the central portion of the substrate to be processed to substantially the center of the front surface and / or the back surface of the substrate to be processed.   3. The substrate processing method according to claim 1, wherein the drying fluid includes at least two types of drying fluids, and these drying fluids are switched and supplied.   4. The substrate processing method according to claim 3, wherein one kind of the drying fluid is a mixed gas of the vapor of the organic solvent and an inert gas, and the other is an inert gas.   The organic solvent is at least one selected from the group consisting of isopropyl alcohol, diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. The substrate processing method according to claim 4. In a substrate processing method in which a surface treatment is performed by spraying a processing fluid onto a substrate to be processed that rotates while being held almost horizontally,
At the time of drying the substrate to be processed, a drying fluid containing an organic solvent vapor containing submicron mist is used as the processing fluid, and the drying fluid is separated from the outer periphery of the substrate to be processed and the surface of the substrate to be processed. The substrate processing method characterized by spraying on the back surface.   The substrate processing method according to claim 6, wherein the drying fluid is composed of at least two types of drying fluids, and these drying fluids are switched and supplied.   The substrate processing method according to claim 7, wherein one kind of the drying fluid is a mixed gas of the vapor of the organic solvent and an inert gas, and the other is an inert gas.   The organic solvent is at least one selected from the group consisting of isopropyl alcohol, diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. The substrate processing method according to claim 8. In a substrate processing method in which a surface treatment is performed by spraying a processing fluid onto a substrate to be processed that rotates while being held almost horizontally,
At the time of drying the substrate to be processed, a drying fluid containing an organic solvent vapor containing submicron mist is used as the processing fluid, and the drying fluid is sprayed on the surface and / or the back surface of the substrate to be processed. A substrate processing method comprising spraying from the outer peripheral edge of the substrate to be processed to the front surface and / or back surface of the substrate to be processed.   The substrate processing method according to claim 10, wherein the drying fluid is sprayed from the axis of the rotation axis in the central portion of the substrate to be processed to a substantially central portion of the surface and / or the back surface of the substrate to be processed.   12. The substrate processing method according to claim 10, wherein the drying fluid is composed of at least two types of drying fluids, and these drying fluids are switched and supplied.   13. The substrate processing method according to claim 12, wherein one kind of the drying fluid is a mixed gas of the vapor of the organic solvent and an inert gas, and the other is an inert gas.   The organic solvent is at least one selected from the group consisting of isopropyl alcohol, diacetone alcohol, 1-methoxy-2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. The substrate processing method according to claim 13.   A substrate holding / rotating unit that rotates the substrate to be processed in a substantially horizontal state, an ejecting unit that ejects a processing fluid onto the substrate to be processed, and a processing fluid supply unit that supplies the processing fluid to the ejecting unit. In the substrate processing apparatus, the spray unit includes first and / or second spray nozzles, the first spray nozzle is above the surface of the substrate to be processed, and the second spray nozzle is below. When the substrate to be processed is dried, a drying fluid containing a vapor of an organic solvent containing submicron mist is supplied from the processing fluid supply means to the ejection means, and the drying fluid is supplied to the first and A substrate processing apparatus for spraying the surface and / or the back surface of the substrate to be processed from the second spray nozzle.   The first and second spray nozzles are on the axis of the rotation axis of the center of the substrate to be processed, the first spray nozzle is above the surface of the substrate to be processed, and the second spray nozzle is 16. The substrate according to claim 15, wherein the substrate is disposed below, and the dry fluid is sprayed from the first and / or second spray nozzles to the center of the front surface and / or back surface of the substrate to be processed. Processing equipment.   17. The substrate processing apparatus according to claim 15, wherein the drying fluid is composed of at least two types of drying fluids, and these drying fluids are switched and supplied.   18. The substrate processing apparatus according to claim 17, wherein one kind of the drying fluid is a mixed gas of an organic solvent vapor and an inert gas, and the other is an inert gas.   The organic solvent is at least one selected from the group consisting of isopropyl alcohol, diacetone alcohol, 1-methoxy 2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. Item 18. A substrate processing apparatus according to Item 18.   A substrate holding / rotating unit that rotates the substrate to be processed in a substantially horizontal state, an ejecting unit that ejects a processing fluid onto the substrate to be processed, and a processing fluid supply unit that supplies the processing fluid to the ejecting unit. In the substrate processing apparatus, the spray unit includes a third spray nozzle, and the third spray nozzle is disposed on an outer peripheral edge of the substrate to be processed, and the processing fluid is dried when the substrate to be processed is dried. A drying fluid containing an organic solvent vapor containing submicron mist is supplied from the supplying means to the ejecting means, and the drying fluid is sprayed from the third ejecting nozzle to the front surface and / or the back surface of the substrate to be processed. A substrate processing apparatus.   The third spray nozzle is composed of one or a plurality of spray nozzles, and these spray nozzles are arranged in the vicinity of the outer peripheral edge of the substrate to be processed with a predetermined interval. The substrate processing apparatus according to claim 20.   The plurality of spray nozzles are provided in the vicinity of the outer peripheral edge of the substrate to be processed, with one spray nozzle being on a horizontal line passing through the substantially central portion of the substrate to be processed. The one injection nozzle is adjacent to the outer peripheral edge on the opposite side of the rotation direction of the substrate to be processed, and is arranged adjacent to the one injection nozzle at a predetermined interval. The substrate processing apparatus according to claim 21, wherein:   23. The plurality of spray nozzles are arranged adjacent to each other such that their tip portions are substantially equal in distance to the outer peripheral edge of the substrate to be processed. The substrate processing apparatus as described.   The substrate processing apparatus according to any one of claims 20 to 23, wherein the drying fluid is composed of at least two types of drying fluids, and these drying fluids are switched and supplied.   25. The substrate processing apparatus according to claim 24, wherein one type of the drying fluid is a mixed gas of an organic solvent vapor and an inert gas, and the other is an inert gas.   The organic solvent is at least one selected from the group consisting of isopropyl alcohol, diacetone alcohol, 1-methoxy 2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. Item 26. The substrate processing apparatus according to Item 25.   A substrate holding / rotating unit that rotates the substrate to be processed in a substantially horizontal state, an ejecting unit that ejects a processing fluid onto the substrate to be processed, and a processing fluid supply unit that supplies the processing fluid to the ejecting unit. In the substrate processing apparatus, the spray means includes first and / or second spray nozzles and a third spray nozzle, and the first spray nozzle is located above the surface of the substrate to be processed, and the second spray nozzle. The third spray nozzle is disposed on the outer peripheral edge of the substrate to be processed, and includes a submicron mist from the processing fluid supply means when the substrate to be processed is dried. A drying fluid containing an organic solvent vapor is supplied to the spraying means, and the drying fluid is supplied from the first and / or the second spraying nozzle to the front surface and / or the back surface of the substrate to be processed. Injection nozzle The substrate processing apparatus characterized by spraying each surface and / or back surface of al the target substrate.   The first and second spray nozzles are on the axis of the rotation axis of the center of the substrate to be processed, the first spray nozzle is above the surface of the substrate to be processed, and the second spray nozzle is 28. The substrate processing according to claim 27, wherein the substrate processing is arranged below, and the dry gas is blown from the first and / or second spray nozzles to the center of the front surface and / or back surface of the substrate to be processed. apparatus.   The third spray nozzle is composed of one or a plurality of spray nozzles, and these spray nozzles are arranged in the vicinity of the outer peripheral edge of the substrate to be processed with a predetermined interval. The substrate processing apparatus according to claim 27.   The plurality of spray nozzles are provided in the vicinity of the outer peripheral edge of the substrate to be processed, with one spray nozzle being on a horizontal line passing through the substantially central portion of the substrate to be processed. The one injection nozzle is adjacent to the outer peripheral edge on the opposite side of the rotation direction of the substrate to be processed, and is arranged adjacent to the one injection nozzle at a predetermined interval. 30. The substrate processing apparatus according to claim 29, wherein:   31. The plurality of spray nozzles are arranged adjacent to each other so that the distances between the tip portions thereof and the outer peripheral edge of the substrate to be processed are substantially equal to each other. The substrate processing apparatus as described.   32. The substrate processing apparatus according to claim 27, wherein the drying fluid is composed of at least two types of drying fluids, and these drying fluids are switched and supplied.   33. The substrate processing apparatus according to claim 32, wherein one type of the drying fluid is a mixed gas of an organic solvent vapor and an inert gas, and the other is an inert gas.   The organic solvent is at least one selected from the group consisting of isopropyl alcohol, diacetone alcohol, 1-methoxy 2-propanol, ethyl glycol, 1-propanol, 2-propanol, and tetrahydrofuran. Item 34. The substrate processing apparatus according to Item 33.

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