JP3950555B2 - Micropattern production equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to an apparatus for producing a micropattern, and more particularly to an apparatus for producing an extremely fine conductive pattern smaller than the wavelength of light on a substrate, particularly in producing an electroconductive pattern used for a semiconductor element, a memory device or the like. About.
[0002]
[Prior art]
  In recent years, with the miniaturization of semiconductor elements and the like, there is an increasing demand for a technique for producing a fine conductive pattern such as wiring on a substrate.
Conventionally, as a method of forming such a conductive pattern, a method of forming a conductive thin film such as a metal on a substrate on one side, and then processing and patterning the thin film by various methods is generally used. ing.
As a thin film processing method, a photolithographic technique is used in which a photoresist is applied, and a mask having a desired pattern is irradiated with various energy rays to expose, and after development, unnecessary portions are removed by etching. ing. In such a method, it is known that the minimum dimension limit that can be processed is approximately the wavelength of the energy beam to be used. Further fine processing is possible by the “phase shift method” disclosed in Japanese Patent Publication No. 62-50811, or the “modified illumination method” disclosed in Japanese Patent Laid-Open No. 4-101148. Thus, it is possible to finely process the size up to about half of the wavelength of the energy ray to be used.
[0003]
  On the other hand, a scanning tunneling microscope (hereinafter referred to as “STM”) capable of directly observing the electronic structure of the surface atoms of the conductor has been developed (G. Binig et al., Phys. Rev. Lett, 49, 57 (1982)). ) Since the real space image can be measured with high resolution regardless of single crystal or amorphous, the scanning probe microscope (hereinafter referred to as "SPM") has been used in the field of fine structure evaluation of materials. It has come to be studied. As one type of SPM, a scanning near-field optical microscope (hereinafter referred to as SNOM) that detects evanescent light that oozes out from a minute aperture having an aperture diameter equal to or smaller than the wavelength of light provided at the probe tip and detects the sample surface from the sample surface with an optical probe. (Abbreviated) [Durig et al., J. MoI. Appl. Phys. 59, 3318 (1986)] was developed.
Lithography using such SNOM has also been developed, and resist is exposed by irradiating evanescent light from an optical fiber having a thin tip, and a silicon substrate is processed to form a fine silicon pattern. (Japanese Patent Laid-Open No. 7-106229).
On the other hand, as a thin film forming method, photo-CVD using decomposition of a material gas by a photochemical reaction is generally used. In photo-CVD, development has been focused on the formation of thin films of semiconductors such as silicon and their compounds (Japanese Patent Laid-Open No. 5-47673), but gold chloride and its compounds are decomposed by light irradiation to form a gold film. Such as a method (Japanese Patent Laid-Open No. 5-259095), photo-CVD of conductive thin films has also been developed.
Furthermore, a method of decomposing a doping gas by using light irradiation and doping impurities on the silicon substrate surface has been proposed (Japanese Patent Laid-Open No. 7-94427).
[0004]
[Problems to be solved by the invention]
  However, among the above conventional examples, in photolithography, fine processing up to about half of the wavelength of the energy beam to be used is possible, but in the i-line that is the shortest wavelength of the energy beam that is usually used. However, since the wavelength is 365 nm, it was difficult to form a fine pattern of 100 nm or less.
Also, when attempting to form a conductive pattern using this method, a conductive thin film such as metal is formed on one surface of the substrate, and then a photoresist is applied, and a mask having a desired pattern is formed. Using this resist pattern to form a resist pattern by irradiating and developing various energy rays, and then etching the conductive thin film to be etched using this resist pattern as an etching mask to remove unnecessary parts. A process was required. In lithography using SNOM, a long and complicated process similar to the above-described photolithography is basically required. In such a process, not only the problem that the process takes a long time, but also a dimensional error of the resist pattern occurs in the exposure and development processes due to the exposure amount and the development speed, and only the material to be etched in the etching process. In addition, a dimensional change due to the etching of the resist pattern may occur, and it is difficult to maintain a high-accuracy processing dimension with a high yield. The problem of this processing dimension error becomes particularly serious when the pattern to be processed becomes very small, and it has been difficult to fabricate the pattern without cutting at a high yield.
[0005]
  In addition, as a major problem in photo-CVD, a film is also deposited on the window for introducing light, and as a result, the intensity of the irradiated light decreases as the film deposition progresses, The deposition rate may decrease. As a method for preventing such film deposition on the window, there are a method of applying low vapor pressure fluorine-based oil or the like to the window, and a gas purge method of purging the vicinity of the window using a gas that does not contribute to the reaction. well known. However, in any of the methods, film deposition on the window cannot be completely prevented, and it is difficult to keep the deposition rate stable.
[0006]
  Therefore, the present invention solves the above-mentioned problems of the prior art, and a fine pattern, particularly a conductive pattern, on the order of 100 nm or less, which cannot be produced by conventional processing using light, is formed on a substrate. An object of the present invention is to provide an apparatus for producing a micropattern which is directly drawn and is produced at a stable and high speed.
[0007]
[Means for Solving the Problems]
  In order to achieve the above object, the present invention is characterized in that a micropattern manufacturing apparatus is configured as follows.
[0008]
  BookThe micropattern production apparatus of the invention is a micropattern production apparatus that forms a fine pattern on a substrate with an optical probe,
  An optical probe with a small opening at the tip;
  A light source for supplying light to the optical probe;
  A drive mechanism for relatively controlling the position of the optical probe and the substrate;
  A gas supply device for supplying a material gas;
  A reaction chamber for decomposing the material gas;
  The gas supply deviceBeforeSame group as the recording probebodyProvided integrally with,
The gas supply device is provided with a nozzle for clustering material gas molecules.It is characterized by being.
Moreover, the micropattern manufacturing apparatus of the present invention is characterized in that the microscopic aperture has an aperture diameter equal to or smaller than the wavelength of light supplied from the light source..
[0009]
DETAILED DESCRIPTION OF THE INVENTION
  In the present invention, a fine conductive pattern having a size of the order of 100 nm or less, which cannot be produced by processing using conventional light, is directly drawn on a substrate, and can be produced at a stable and high speed. To wearPlaceCan be realized. Next, an embodiment of the present invention will be described. ThatreferenceAs an example, FIG. 1 shows a schematic diagram of a micropattern manufacturing apparatus.
DESCRIPTION OF SYMBOLS 1 is an optical probe, 2 is a light shielding layer, 3 is a light source, 4 is introduction light, 5 is a minute aperture, 6 is irradiation light, 7 is a gas supply device, 8 is a material gas (molecule), 9 is a base material, 10 is A drive mechanism, 11 is a stage, 12 is a reaction chamber, 13 is a micropattern, and 32 is a control computer. An optical probe 1 covered with a light-shielding layer 2 having a minute aperture 5, a light source 3 for supplying introduced light 4 to the optical probe 1, a drive mechanism 10 for controlling the XYZ position of the optical probe 1 and the substrate 9 relatively The gas supply device 7 that supplies the material gas 8 and the reaction chamber 12 that decomposes the material gas 8 are provided.
Of the present inventionWith equipmentMicro patternTheProductionDoAn outline of the method is described below. First, the introduction light 4 is introduced from the light source 3 to the optical probe 1, and the irradiation light 6 is irradiated from the minute opening 5 at the tip of the optical probe 1. Further, the tip of the optical probe 1 is brought close to the base material 9 fixed on the stage 11. Further, the material gas 8 is supplied from the gas supply device 7 and at the same time, the drive mechanism 10 is used for relative scanning. By doing so, the material gas 8 is decomposed by the photochemical reaction by the irradiation light 6, the decomposition product is supplied to and adhered to the desired pattern on the surface of the substrate 9, and the micropattern 13 is directly drawn and formed. To do.
[0010]
  In the present invention, an optical probe having a sharpened tip of an optical fiber is used. More preferably, the optical fiber is covered with a light shielding layer, and a minute opening through which light can pass is provided in the light shielding layer at the tip. Further, the irradiation light is evanescent light so that the minute aperture has an aperture diameter equal to or smaller than the wavelength of the introduction light supplied from the light source. The smaller the aperture diameter is, the smaller the resolution can be and the finer pattern can be formed. However, the smaller the size, the smaller the amount of light that can pass through the micro aperture, so the amount of decomposition of the material gas decreases. Since the micropattern formation speed may decrease, the opening diameter can be arbitrarily determined depending on the required pattern width and the formation speed. However, the preferable range is about 5 nm to 50 nm. The optical probe is not limited to the above. For example, an Si single crystal substrate formed by anisotropic etching using a solution, an ion beam or an electron beam to form a microscopic aperture, or a light transmissive material What processed the tip into the shape of a probe is also used. By doing so, it is possible to form a fine conductive pattern having a size of 100 nm or less, which could not be achieved by conventional photolithography.
[0011]
  In the present invention, a metal compound gas is used as the material gas to generate metal by being decomposed by the energy of irradiation light, thereby depositing metal on the substrate to form a conductive layer, and forming a minute pattern. Can be formed.to thisAs the material gas used, metal hydrides, metal halides, organometallic compounds, and the like are used. For example, AuCl, DMAu (dimethyl gold), Cr (CO)₆, Cr (CO₂), Mo (CO)₆, W (CO)₆, WF₆, Al (CH_Three)_Three, Al₂(CH_Three)₆, Al₂(Iso-C_FourH₉)_Three, Zn (CH_Three)₂, DMCd (dimethyl cadmium), TiCl_Four, Al₂(CH_Three)₆However, the present invention is not limited to these, and any metal compound that can be decomposed by the energy of light can be used as appropriate.
Similarly, impurities can be doped on the surface of the silicon substrate using a doping gas as a material gas, and a conductive layer can be formed on the surface of the silicon substrate to form a minute pattern.to thisAs the material gas used, a compound of phosphorus or boron is used. For example, BCl_Three, B₂H₆, B_FiveH₉, BF_Three, B_TenH₁₄, BBr_Three, B (CH_Three)_Three, PH_Three, PF_Three, PF_Five, PCl_Three, PCl_Five, POCl_Three, C_FourH₁₁However, the present invention is not limited to these, and any doping gas that can be decomposed by the energy of light can be used as appropriate, including arsenic and gallium.
Similarly, an unnecessary portion of the conductive layer on the substrate surface can be removed using an etching gas as a material gas to form a minute pattern. As a material gas used in this method, various gases are used depending on the material of the conductive layer to be etched.
In addition, the above gas may be used alone or may be appropriately mixed with other gases.
[0012]
  Furthermore, in the present invention, it is preferable that the material gas particles are attracted to the vicinity of the minute opening by a force acting from evanescent light to relatively increase the material gas concentration. In general, it is known that when light is incident on a minute aperture, a force acts on particles existing in the vicinity of irradiation light passing through the minute aperture, and the particles can be attracted.
Such a force is obtained when the particle diameter is the same as or slightly larger than the aperture diameter, and the aperture diameter of the microscopic aperture is sufficiently small and the evanescent light component of the irradiated light is dominant. The force attracted in the direction becomes larger. That is, when the aperture diameter of the microscopic aperture and the particle diameter are in the above ranges, the particles can be more efficiently collected in the vicinity of the microscopic aperture. For this purpose, it is preferable to cluster material gas molecules. In the present invention, the aperture diameter of the microscopic aperture is preferably in the order of several nanometers to several tens of nanometers as described above, but the material gas supplied in the vicinity of the aperture has a single molecular diameter relative to the microscopic aperture diameter. Since it is approximately 1/10 to 1/100, the material gas molecules are clustered to form particles having the same diameter as or slightly larger than the opening diameter of the minute openings, so that the particles of the material gas are more efficiently located in the vicinity of the minute openings. Can be collected. The preferred cluster size is in the range of about 100 to 10,000, so that one cluster is approximately equal to or slightly larger than the opening diameter of the minute openings.
In the present invention,To cluster such material gas moleculesIn addition,A nozzle is provided in the aforementioned gas supply device. By ejecting the material gas from this nozzle, adiabatic expansion occurs to generate clusters. The cluster size can be controlled by the shape, length and nozzle diameter of the nozzle. Examples of preferred nozzle shapes include those shown in FIG.₁= 0.02 mm to 0.2 mm, d₂= 1 mm to 10 mm, d_Three= 1 mm to 10 mm, l₁= 1 mm to 50 mm, l₂= 1 to 50 mm is preferable.
By doing so, it is possible to relatively increase the material gas concentration in the vicinity of the minute opening, increase the material gas to be decomposed, and form the minute pattern at a higher speed.
[0013]
  In the present invention, in the gas supply device, it is preferable to supply the material gas as close to the tip of the optical probe as possible. As a means for this, for example, using a micromachine technique, the gas supply device and the optical probe are integrally provided on the same substrate and used.TheBy doing so, it is possible to relatively increase the material gas concentration in the vicinity of the minute opening, increase the material gas to be decomposed, and form the minute pattern at a higher speed.
Furthermore, in the present invention, it is preferable to provide a mechanism for applying a voltage to the optical probe using the light shielding layer of the optical probe as a conductive material.
By doing in this way, an electric field can be applied between a base material and the optical probe front-end | tip. Thereby, energy by an electric field can be supplied near the tip of the optical probe, and the decomposition rate of the material gas can be improved.
Furthermore, by applying a high voltage pulse while the supply of the material gas is stopped, it becomes possible to remove the contaminants such as decomposition products of the material gas adhering to the tip of the optical probe by electric field evaporation, and a minute opening can be removed. It is possible to stabilize the intensity of the irradiation light in a constantly clean state and stably produce a micropattern. In this case, the material used for the light shielding layer is a material having a larger evaporation electric field than the decomposition product of the material gas.
[0014]
  As the light source, a commonly used laser light source can be used as appropriate, and preferred examples include He—Cd, He—Ne, argon, and excimer, which are visible or ultraviolet lasers. A smaller semiconductor laser is also used, and a blue semiconductor laser can be preferably used.
Further, the reaction chamber may be decompressed as necessary.
In the present invention, the substrate may be appropriately heated when the material gas is decomposed by the light irradiated from the optical probe, or after the decomposition product is adhered to a desired pattern on the surface of the base material. Absent.
[0015]
【Example】
  Below, the present inventionReference examples andExamples will be described.
[referenceExample 1]
  In FIG.referenceThe schematic of the production apparatus of the micro pattern of Example 1 is shown.
DESCRIPTION OF SYMBOLS 1 is an optical probe, 2 is a light shielding layer, 3 is a light source, 4 is introduction light, 5 is a minute aperture, 6 is irradiation light, 7 is a gas supply device, 8 is a material gas (molecule), 9 is a base material, 10 is A drive mechanism, 11 is a stage, 12 is a reaction chamber, 13 is a micropattern, and 32 is a control computer.
BookreferenceIn the fine pattern manufacturing apparatus of the example, an optical fiber having a core and a clad as the optical probe 1 is sharpened by etching and the tip of the core is sharpened. A 30 nm thick layer and a sharpened light shielding layer at the tip of the core with a minute opening 5 formed thereon were used. The opening diameter of the minute opening 5 was 20 nm. As the light source 3, for example, a He—Cd laser having a wavelength of 325 nm is used, and the introduction light 4 is introduced from the end face on the opposite side of the microscopic aperture 5 of the optical probe 1. As the light source 3, a He—Ne laser, an argon laser, an excimer laser, or the like was also used. By doing in this way, evanescent light was irradiated from the minute opening 5 as the irradiation light 6. Further, the stage 11 is provided with a driving mechanism 10 so that the tip of the optical probe 1 and the surface of the base material 9 are brought close to each other so that they can be scanned relatively. This drive mechanism 10 has a coarse movement mechanism and a fine movement mechanism using a piezoelectric element, and by controlling the voltage applied to the piezoelectric element, highly accurate position control in the XYZ3 directions can be performed. The base material 9 was fixed on the stage 11.
Further, as the gas supply device 7, the material gas 8 is supplied to the vicinity of the tip of the optical probe 1 from a thin tube. All these mechanisms were housed in the reaction chamber 12. Further, the inside of the reaction chamber 12 is exhausted by a vacuum pump (not shown).
The light source 3 and the drive mechanism 10 are connected to a control computer 32 so that light irradiation, position control of the optical probe and the substrate, and scanning can be controlled collectively.
[0016]
  BookreferenceExampleWith the equipment ofMicro patternTheProductionDoThe method is described below.
First, the introduction light 4 was introduced from the light source 3 to the optical probe 1, and the irradiation light 6 was irradiated from the minute opening 5 at the tip of the optical probe 1. The introduction light 4 was turned on / off as required during pattern formation. In this way, the introduction light 4 propagates through the optical probe 1 made of an optical fiber, and is irradiated as the irradiation light 6 from the minute opening 5 provided in the light shielding layer 2 at the sharpened tip of the core. Since the diameter of the minute aperture 5 is smaller than the wavelength of the introduction light 4, the irradiation light 6 is evanescent light.
Furthermore, the drive mechanism 10 of the stage 11 to which the substrate 9 was fixed was used to bring the tip of the optical probe 1 and the surface of the substrate 9 close to about 10 nm. In this embodiment, a silicon single crystal was used as the substrate 9.
Further, the material gas 8 was supplied to the vicinity of the tip of the optical probe 1 from the thin tube as the gas supply device 7 and at the same time, the drive mechanism 10 was used for relative scanning. In this embodiment, AuCl is used as the material gas 8.
[0017]
  By doing so, the material gas 8 is decomposed by the photochemical reaction by the irradiation light 6, the decomposition product is supplied to and adhered to the desired pattern on the surface of the substrate 9, and the micropattern 13 is directly drawn and formed. did. In this example, since a gold compound was used as the material gas 8, a conductive fine pattern made of gold could be formed.
BookreferenceIn the example, the micropattern 13 could be formed in a line shape having a width of about 20 nm. Also, no pattern breakage was observed.
Furthermore, by performing the method of the present embodiment in exactly the same manner using the material gas 8 as an etching gas, it was possible to form a micropattern by removing unnecessary conductive material on the substrate 9. .
BookreferenceAccording to the example, it was possible to provide an apparatus and a method for directly drawing a fine conductive pattern having a size on the order of 100 nm or less, which could not be produced by processing using conventional light, on a substrate. .
[0018]
    [referenceExample 2]
  referenceIn Example 2,referenceUsing the apparatus shown in FIG. 1 similar to Example 1, doping gas is used as a material gas, impurities are doped on the surface of the silicon substrate, a conductive layer is formed on the surface of the silicon substrate, and a minute pattern is formed. Formed.
BookreferenceA method for producing an example micropattern will be described below.
First, the introduction light 4 was introduced from the light source 3 to the optical probe 1, and the irradiation light 6 was irradiated from the minute opening 5 at the tip of the optical probe 1. The light source 3 was the same as that in Example 1, and the introduction light 4 was turned on / off as required during pattern formation. In this way, the introduction light 4 propagated through the optical probe 1 made of an optical fiber, and was irradiated as the irradiation light 6 from the minute opening 5 having an opening diameter of 20 nm provided in the light shielding layer 2 at the sharpened tip of the core. Since the diameter of the minute aperture 5 is smaller than the wavelength of the introduction light 4, the irradiation light 6 is evanescent light.
Furthermore, the drive mechanism 10 of the stage 11 to which the substrate 9 was fixed was used to bring the tip of the optical probe 1 and the surface of the substrate 9 close to about 10 nm. BookreferenceIn the example, a silicon single crystal was used as the substrate 9.
Further, the material gas 8 was supplied to the vicinity of the tip of the optical probe 1 from the thin tube as the gas supply device 7 and at the same time, the drive mechanism 10 was used for relative scanning. In this embodiment, the material gas 8 is BCl._ThreeWas used.
[0019]
  By doing so, the material gas 8 is decomposed by the photochemical reaction by the irradiation light 6, the decomposition product is supplied to and adhered to the desired pattern on the surface of the substrate 9, and the micropattern 13 is directly drawn and formed. did. BookreferenceIn the example, since a boron compound was used as the material gas 8, boron, which is a decomposition product of the material gas, was supplied onto the substrate 9 to form a micropattern 13. BookreferenceIn the example, the base material 9 is heated, and the supplied boron is diffused by a minute depth from the surface of the base material 9 to the inside.
BookreferenceIn the example, the micropattern 13 could be formed in a line shape having a width of about 20 nm. Also, no pattern breakage was observed.
BookreferenceAccording to the example, it was possible to provide an apparatus and a method for directly drawing a fine conductive pattern having a size on the order of 100 nm or less, which could not be produced by processing using conventional light, on a substrate. .
[0020]
    [referenceExample 3]
  In FIG.referenceThe schematic of the production apparatus of the micro pattern of Example 3 is shown.
1 is an optical probe, 2 is a light shielding layer, 3 is a light source, 4 is introduction light, 5 is a microscopic aperture, 6 is irradiation light, 7 is a gas supply device, 8 is a material gas (molecules and clusters), 9 is a substrate, 10 is a drive mechanism, 11 is a stage, 12 is a reaction chamber, 13 is a micropattern, 14 is a nozzle, and 32 is a control computer.
BookreferenceIn the example, a nozzle 14 is provided in the gas supply device 7 in order to cluster the molecules of the material gas 8. Figure 3 shows the bookreferenceThe nozzle 14 provided in the gas supply apparatus 7 used in the example is shown. The shape of the nozzle is d in FIG.₁= 0.1 mm, d₂= 3 mm, d_Three= 3mm, l₁= 30 mm, l₂= 30 mm.
BookreferenceIn the example of the fine pattern manufacturing apparatus, the configuration other than the gas supply device 7 and the nozzle 14 is the same as that of the first embodiment.
BookreferenceExampleWith equipmentMicro patternTheProductionDoThe method is described below.
First, the introduction light 4 was introduced from the light source 3 to the optical probe 1, and the irradiation light 6 was irradiated from the minute opening 5 at the tip of the optical probe 1. Light source 3referenceThe same light as in Example 1 was used, and the introduction light 4 was turned ON / OFF as required during pattern formation. In this way, the introduction light 4 propagated through the optical probe 1 made of an optical fiber, and was irradiated as the irradiation light 6 from the minute opening 5 having an opening diameter of 20 nm provided in the light shielding layer 2 at the sharpened tip of the core. Since the diameter of the minute aperture 5 is smaller than the wavelength of the introduction light 4, the irradiation light 6 is evanescent light.
Furthermore, the drive mechanism 10 of the stage 11 to which the substrate 9 was fixed was used to bring the tip of the optical probe 1 and the surface of the substrate 9 close to about 10 nm. BookreferenceIn the example, a silicon single crystal was used as the substrate 9.
Further, the material gas 8 was supplied to the vicinity of the tip of the optical probe 1 from the nozzle 14, which is the gas supply device 7, and at the same time, the drive mechanism 10 was used for relative scanning. BookreferenceIn the example, AuCl was used as the material gas 8. BookreferenceIn the example, a part of molecules of the material gas is clustered with a cluster size of 100 by injecting the material gas 8 from the nozzle 14.
[0021]
  By doing so, the material gas 8 is decomposed by the photochemical reaction by the irradiation light 6, the decomposition product is supplied to and adhered to the desired pattern on the surface of the substrate 9, and the micropattern 13 is directly drawn and formed. did. BookreferenceIn the example, since a gold compound was used as the material gas 8, a conductive fine pattern made of gold could be formed.
BookreferenceIn the example, the micropattern 13 could be formed in a line shape having a width of about 20 nm. Also, no pattern breakage was observed. BookreferenceAccording to the method of the example, the material gas particles can be attracted to the vicinity of the minute opening by the force acting from the evanescent light, and the material gas concentration can be relatively increased.referenceCompared with Example 1, gold was deposited approximately twice as fast, and a fine pattern could be formed at a faster rate.
BookreferenceAccording to the example, it was possible to provide an apparatus and a method for directly drawing a fine conductive pattern having a size on the order of 100 nm or less, which could not be produced by processing using conventional light, on a substrate. .
In addition, bookreferenceIn the example, the material gas is clustered so that the force acting from the evanescent light attracts more efficiently near the microscopic aperture, and the material gas concentration near the tip of the optical probe is relatively increased to increase the material gas to be decomposed. As a result, a fine pattern can be formed at a higher speed.
[0022]
    [referenceExample 4]
  In FIG.referenceThe schematic of the production apparatus of the micro pattern of Example 4 is shown.
DESCRIPTION OF SYMBOLS 1 is an optical probe, 2 is a light shielding layer, 3 is a light source, 4 is introduction light, 5 is a minute aperture, 6 is irradiation light, 7 is a gas supply device, 8 is a material gas (molecule), 9 is a base material, 10 is A drive mechanism, 11 is a stage, 12 is a reaction chamber, 13 is a micropattern, 15 is a power source, 16 is wiring, and 32 is a control computer.
BookreferenceIn the example, a power source 15 and a wiring 16 are connected to the conductive light shielding layer 2 so that a voltage can be applied to the optical probe 1. The light shielding layer 2 was made of Mo as a material and deposited by 30 nm by ion beam sputtering. The light source 3, the driving mechanism 10, and the power source 15 are connected to a control computer 32 so that light irradiation, position control and scanning of the optical probe and the substrate, and voltage application can be controlled.
BookreferenceIn the fine pattern manufacturing apparatus of the example, except for the material used for the light shielding layer 2 described above, the power supply 15 and the wiring 16,referenceSame as Example 1.
[0023]
  BookreferenceA method for producing an example micropattern will be described below.
First, the introduction light 4 was introduced from the light source 3 to the optical probe 1, and the irradiation light 6 was irradiated from the minute opening 5 at the tip of the optical probe 1. The light source 3 was the same as that in Example 1, and the introduction light 4 was turned on / off as required during pattern formation. In this way, the introduction light 4 propagated through the optical probe 1 made of an optical fiber, and was irradiated as the irradiation light 6 from the minute opening 5 having an opening diameter of 20 nm provided in the light shielding layer 2 at the sharpened tip of the core. Since the diameter of the minute aperture 5 is smaller than the wavelength of the introduction light 4, the irradiation light 6 is evanescent light.
Furthermore, the drive mechanism 10 of the stage 11 to which the substrate 9 was fixed was used to bring the tip of the optical probe 1 and the surface of the substrate 9 close to about 10 nm. BookreferenceIn the example, a silicon single crystal was used as the substrate 9. BookreferenceIn the example, the silicon single crystal having a surface resistivity of about 10 Ω · cm was used.
Further, the material gas 8 was supplied to the vicinity of the tip of the optical probe 1 from the thin tube as the gas supply device 7 and at the same time, the drive mechanism 10 was used for relative scanning. In this embodiment, AuCl is used as the material gas 8. More booksreferenceIn the example, at this time, the power source 15 and the wiring 16 are connected to the conductive light shielding layer 2, and a voltage is applied to the optical probe 1. The applied voltage was 10V.
[0024]
  By doing so, the material gas 8 is decomposed by the photochemical reaction by the irradiation light 6, the decomposition product is supplied to and adhered to the desired pattern on the surface of the substrate 9, and the micropattern 13 is directly drawn and formed. did. BookreferenceIn the example, since a gold compound was used as the material gas 8, a conductive fine pattern made of gold could be formed.
BookreferenceIn the example, the micropattern 13 could be formed in a line shape having a width of about 20 nm. Also, no pattern breakage was observed. BookreferenceAccording to the example method:referenceCompared with Example 1, gold was deposited approximately twice as fast, and a fine pattern could be formed at a faster rate. Ie bookreferenceAccording to the method of the example, by applying an electric field between the substrate and the tip of the optical probe, energy by the electric field is supplied to the vicinity of the tip of the optical probe, and the decomposition rate of the material gas can be improved.
[0025]
  Further, when the micropattern was formed for a long time, gold, which is a decomposition product of the material gas, was gradually deposited on the tip of the optical probe, the light passing through the introduced light was reduced, and the decomposition rate was reduced. BookreferenceIn the example, by applying a high voltage pulse in a state where the supply of the material gas is stopped, it is possible to evaporate and remove the decomposition product of the material gas adhering to the tip of the optical probe. The applied voltage was set to a range larger than the gold evaporation electric field (35 V / nm) and smaller than the Mo evaporation electric field (46 V / nm) used for the light shielding layer. In this way, only the dirt can be removed by electric field evaporation without causing evaporation of the light shielding layer, the minute aperture is always kept clean, the intensity of irradiation light is stabilized, and the minute pattern is stably produced. I was able to.
[0026]
    [ImplementationExample]
  Figure 5 shows the implementationExample1 shows a schematic view of a micropattern manufacturing apparatus.
In this embodiment, the gas supply device 7 and the optical probe 1 are integrally provided on the same substrate by using a micromachine technique. FIG. 6 shows a manufacturing process diagram thereof. 5 and 6, 1 is an optical probe, 2 is a light shielding layer, 3 is a light source, 4 is introduction light, 5 is a minute aperture, 6 is irradiation light, 7 is a gas supply device, and 8 is a material gas (molecules and clusters). ), 9 is a base material, 10 is a drive mechanism, 11 is a stage, 12 is a reaction chamber, 13 is a micropattern, 14 is a nozzle, 17 is a first silicon substrate, 18 is a first mask layer, and 19 is a second 20 is a first etching port, 21 is a second etching port, 22 is a third etching port, 23 is a light inlet, 24 is a second silicon substrate, 25 is a third mask layer, 26 is a fourth mask layer, 27 is a fourth etching port, 28 is a recess, 29 is a release layer, 30 is a light transmission layer, 31 is a bonding auxiliary layer, and 32 is a control computer.
[0027]
  A process in which the gas supply device 7 and the optical probe 1 shown in FIG. 6 are integrally provided on the same base will be described below.
First, as shown in FIG. 6 a, the first mask layer 18 and the second mask layer 19 made of silicon nitride were formed on both surfaces of the first silicon substrate 17. The first silicon substrate 17 is a double-side polished substrate having a plane orientation (100) and a thickness of 2 mm. Both the first mask layer 18 and the second mask layer 19 are formed by depositing silicon nitride to a thickness of 200 nm by CVD. It is a thing.
Subsequently, as shown in FIG. 6 b, the first etching port 20 and the second etching port 21 were formed in the first mask layer 18, and the third etching port 22 was formed in the second mask layer 19. In addition, the 2nd etching port 21 and the 3rd etching port 22 were formed in the position which the front and back of a board | substrate oppose. The etching ports were all square, the first etching port 20 was 2.8 mm × 2.8 mm, and the second etching port 21 and the third etching port 22 were 1.4 mm × 1.4 mm.
Further, as shown in FIG. 6c, the first silicon substrate 17 is anisotropically etched using a KOH aqueous solution, and further, the first mask layer 18 and the second mask layer 19 are formed as shown in FIG. 6d. CF_FourThe gas was removed by dry etching to form a light inlet 23 and a nozzle 14 for introducing a material gas. In the drawing of the light introduction light 23, the size of the lower opening is 50 μm, and the size of each part of the nozzle 14 is d₁= 0.1 mm, d₂= 1.4mm, d_Three= 1.4mm, l₁= 1 mm, l₂Each was formed to be 1 mm.
[0028]
  Further, as shown in FIG. 6E, a third mask layer 25 and a fourth mask layer 26 made of silicon nitride were formed on both surfaces of the second silicon substrate 24. The second silicon substrate 24 is a double-side polished substrate having a plane orientation (100), and both the third mask layer 25 and the fourth mask layer 26 are obtained by depositing silicon nitride to a thickness of 200 nm by a CVD method. .
Subsequently, as shown in FIG. 6f, a 50 μm × 50 μm square opening is formed in the third mask layer 25 as the fourth etching port 27, and the second silicon substrate 24 is anisotropically formed using a KOH aqueous solution. Etching was performed to form an inverted pyramid-shaped recess 28 having a depth of about 35 μm.
Further, as shown in FIG. 6g, the third mask layer 25 is made of CF._FourAfter removing by dry etching using gas, it is heated to 1000 ° C. in an oxygen and hydrogen atmosphere to produce SiO 2₂The release layer 29 was formed by forming 500 nm.
Further, as shown in FIG. 6h, the light shielding layer 2, the light transmission layer 30, and the auxiliary bonding layer 31 were formed as follows. First, a Pt film to be the light shielding layer 2 was deposited by 30 nm by vacuum vapor deposition, and an ITO (Indium Tin Oxide) film to be the light transmission layer 30 was deposited thereon by 3 μm by sputtering, and was patterned by photolithography. Further, a 300 nm thick Au film was deposited by vacuum evaporation, and then patterned by photolithography to form a bonding auxiliary layer 31. The optical probe 1 was fabricated on the second silicon substrate using the recess 28 as a mold.
Subsequently, as shown in FIG. 6 i, the light entrance 23 formed in the first silicon substrate 17 and the portion of the light transmission layer 30 formed in the second silicon substrate 24 are aligned to face each other and contact each other. Further, a load was applied to join (crimp) the optical probe 1.
[0029]
  Finally, as shown in FIG. 6j, the first silicon substrate 17 and the second silicon substrate 24 are peeled off and peeled off at the interface between the peeling layer 29 and the light shielding layer 2, and then the light shielding layer 2 at the tip is removed. Thus, a minute opening 5 was formed. The opening diameter of the minute opening 5 was 20 nm.
The gas supply device 7 and the optical probe 1 are integrally provided on the same substrate, and the manufactured light 4 and the material gas 8 can be supplied to the manufactured device as shown in FIG. A semiconductor laser having a wavelength of 635 nm was used as the light source 3, and the introduction light 4 was introduced from the back side of the optical probe 1 through the light entrance 23. By doing in this way, evanescent light was irradiated from the minute opening 5 as the irradiation light 6. Further, the stage 11 is provided with a driving mechanism 10 so that the tip of the optical probe 1 and the surface of the base material 9 are brought close to each other so that they can be scanned relatively. This drive mechanism 10 has a coarse movement mechanism and a fine movement mechanism using a piezoelectric element, and by controlling the voltage applied to the piezoelectric element, highly accurate position control in the XYZ3 directions can be performed. The base material 9 was fixed on the stage 11.
Further, the material gas 8 can be supplied from the gas supply device 7 to the vicinity of the tip of the optical probe 1 through the nozzle 14. All these mechanisms were housed in the reaction chamber 12. Further, the inside of the reaction chamber 12 is exhausted by a vacuum pump (not shown).
As the light source 3referenceIn addition to the same as in Example 1, it was possible to make the whole apparatus small by fixing it with the optical probe 1 using a blue semiconductor laser.
The light source 3 and the drive mechanism 10 are connected to a control computer 32 so that light irradiation, position control of the optical probe and the substrate, and scanning can be controlled collectively.
[0030]
  Of this exampleWith equipmentMicro putterTheProductionDoThe method is described below.
First, the introduction light 4 was introduced from the light source 3 to the optical probe 1, and the irradiation light 6 was irradiated from the minute opening 5 at the tip of the optical probe 1. The introduction light 4 was turned on / off as required during pattern formation. In this way, the introduction light 4 propagated through the optical probe 1 made of an optical fiber, and was irradiated as the irradiation light 6 from the minute opening 5 having an opening diameter of 20 nm provided in the light shielding layer 2 at the sharpened tip of the core. Since the diameter of the minute aperture 5 is smaller than the wavelength of the introduction light 4, the irradiation light 6 is evanescent light.
Furthermore, the drive mechanism 10 of the stage 11 to which the substrate 9 was fixed was used to bring the tip of the optical probe 1 and the surface of the substrate 9 close to about 10 nm. In this embodiment, a silicon single crystal was used as the substrate 9.
Further, the material gas 8 was supplied to the vicinity of the tip of the optical probe 1 from the nozzle 14, which is the gas supply device 7, and at the same time, the drive mechanism 10 was used for relative scanning. In this embodiment, AuCl is used as the material gas 8. In this embodiment, the material gas 8 is ejected from the nozzle 14 to cluster some of the molecules of the material gas with a cluster size of several hundreds.
[0031]
  By doing so, the material gas 8 is decomposed by the photochemical reaction by the irradiation light 6, the decomposition product is supplied to and adhered to the desired pattern on the surface of the substrate 9, and the micropattern 13 is directly drawn and formed. did. In this example, since a gold compound was used as the material gas 8, a conductive fine pattern made of gold could be formed.
In this example, the micropattern 13 could be formed in a line shape having a width of about 20 nm. Also, no pattern breakage was observed. This implementationFor exampleAccording to this, gold was deposited at a rate approximately four times that of Example 1, and a fine pattern could be formed at a higher rate.
In addition, in the apparatus of this example, an apparatus in which the opening diameter of the minute opening 5 at the tip of the optical probe 1 was 10 nm was also manufactured. When a micropattern was formed using such an apparatus, the micropattern 13 could be formed in a line shape having a width of about 10 nm. Also, no pattern breakage was observed. In this way, this implementationFor exampleTherefore, even when a finer pattern is formed by reducing the aperture diameter of the minute aperture,referenceCompared with Example 1, gold was deposited at about three times the speed, and a finer pattern could be formed at a higher speed.
[0032]
  In the present embodiment, as a means for supplying the material gas from the vicinity of the tip of the optical probe, a gas supply device and an optical probe which are integrally provided on the same base using a micromachine technique were used. By doing so, the material gas concentration near the tip of the optical probe was relatively increased, the material gas to be decomposed was increased, and a fine pattern could be formed at a higher speed.
Furthermore, in this embodiment, the material gas is clustered, and the force acting from the evanescent light attracts more efficiently near the microscopic aperture, and the material gas concentration near the tip of the optical probe is relatively increased to be decomposed. By increasing the material gas, it was possible to form micropatterns at a faster rate.
[0033]
【The invention's effect】
  As described above, according to the present invention, a fine pattern having a size of 100 nm or less, particularly a conductive pattern, which cannot be produced by processing using conventional light, is directly drawn on a substrate, A micropattern manufacturing apparatus that can be manufactured stably and at a high speed can be realized.
In the present invention, in order to supply the material gas from the vicinity of the tip of the optical probe, the gas supply device and the optical probe are integrally provided on the same base,In addition, the gas supply device is provided with a nozzle for clustering material gas molecules.With this configuration, it is possible to relatively increase the material gas concentration in the vicinity of the minute opening, increase the material gas to be decomposed, and form a minute pattern at a higher speed.
[Brief description of the drawings]
[Figure 1]referenceExample 1 andreferenceFIG. 5 is a schematic diagram of a micropattern manufacturing apparatus of Example 2.
[Figure 2]referenceFIG. 4 is a schematic diagram of a micropattern manufacturing apparatus of Example 3.
[Fig. 3]referenceSectional drawing of the nozzle of the production apparatus of the micro pattern of Example 3. FIG.
[Fig. 4]referenceFIG. 6 is a schematic view of a micropattern manufacturing apparatus of Example 4.
[Figure 5] ImplementationExampleSchematic of a micropattern manufacturing apparatus.
[Figure 6] ImplementationExampleThe manufacturing process figure of the manufacturing apparatus of a micro pattern.
[Explanation of symbols]
      1: Optical probe
      2: Shading layer
      3: Light source
      4: Introduction light
      5: Micro opening
      6: Irradiation light
      7: Gas supply device
      8: Material gas
      9: Base material
      10: Drive mechanism
      11: Stage
      12: Reaction chamber
      13: Micropattern
      14: Nozzle
      15: Power supply
      16: Wiring
      17: First silicon substrate
      18: First mask layer
      19: Second mask layer
      20: First etching port
      21: Second etching port
      22: Third etching port
      23: Light entrance
      24: Second silicon substrate
      25: Third mask layer
      26: Fourth mask layer
      27: Fourth etching port
      28: recess
      29: Release layer
      30: Light transmission layer
      31: Joining auxiliary layer
      32: Control computer

Claims (2)

A micro-pattern manufacturing apparatus that forms a fine pattern on a substrate with an optical probe,
An optical probe with a small opening at the tip;
A light source for supplying light to the optical probe;
A drive mechanism for relatively controlling the position of the optical probe and the substrate;
A gas supply device for supplying a material gas;
A reaction chamber for decomposing the material gas;
Has the gas supply device is provided integrally on the same base body and before Symbol optical probe,
The apparatus for producing a micropattern is characterized in that the gas supply device is provided with a nozzle for clustering material gas molecules . The apparatus for producing a micropattern according to claim 1, wherein the microscopic aperture has an aperture diameter equal to or smaller than a wavelength of light supplied from the light source .

Images