JP3726477B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing apparatus having plasma generating means, and more particularly, plasma etching suitable for fine pattern formation of semiconductor devices and liquid crystal display elements, and uniform processing on a large-diameter substrate, and plasma suitable for formation of a microstructure thin film. The present invention relates to a plasma processing apparatus and a plasma processing method such as CVD and plasma polymerization.
[0002]
[Prior art]
In a plasma processing apparatus for processing semiconductor elements and liquid crystal display elements using plasma, active species that affect the processing performance, energy of incident ions on the processing substrate, ion directionality, control of plasma processing uniformity, and plasma processing Productivity is necessary.
[0003]
For controlling active species, there is a parallel plate electrode type as disclosed in, for example, Japanese Patent Laid-Open No. 57-131374. FIG. 17 shows a conventional example of a parallel plate electrode type plasma processing apparatus.
[0004]
In the apparatus of FIG. 17, the processing chamber 9 surrounded by the cylindrical side wall portion 6, the insulating portion 5, and the disc-shaped electrode 2 is kept in a vacuum state by a gas exhausting means (not shown), and the gas supply means 7 is A processing gas is supplied to the processing chamber through the electrode 2 having the function of a gas introduction path. Usually, the side wall portion 6 is grounded and insulated from the electrode 2 by the insulating portion 5. The electrode 2 and the support base 3 constitute parallel plate electrodes, and the processing gas inside the processing chamber 9 is turned into plasma when the power source 1 applies power between the parallel plate electrodes.
[0005]
In the lower part of the processing chamber, a wafer 4 to be processed is placed on the support 3, and fine processing is performed by plasma generated in the processing chamber 9 and active species (radicals) in the processing gas activated by the plasma. Is done. At this time, the density of the plasma and the temperature of electrons in the plasma change depending on the input power applied by the power source 1, the pressure in the processing chamber 9, the width of the gap between the electrode 2 and the support base 3, and the like. That is, the amount and ratio of some active species that affect the performance of microfabrication change.
[0006]
Regarding the control of ion energy, there is a method as disclosed in JP-A-4-239128.
[0007]
This is because the parallel plate electrodes are provided with a divergent magnetic field perpendicular to them, thereby controlling the self-bias voltage and making the energy of ions incident on the substrate independent of the magnetic field, independent of the high-frequency power output that generates plasma. It is possible to perform high-precision etching without causing damage.
[0008]
As a method for improving the directionality of ions and not reducing the processing speed, there is a method as disclosed in JP-A-8-195379.
[0009]
This is to generate a plasma in which capacitive coupling and inductive coupling are mixed, thereby generating high-density plasma at a low pressure and realizing plasma processing with excellent plasma density distribution controllability.
[0010]
As a plasma processing apparatus for controlling the uniformity of plasma processing, there is an apparatus disclosed in Japanese Patent Application Laid-Open No. 61-283127.
[0011]
In this apparatus, an electrode to which high-frequency power is applied is divided into a plurality of parts, and the power applied to each electrode is independently controlled to improve uniformity.
[0012]
A major problem in improving productivity is that in processes such as etching and plasma CVD, a film is formed on the inner wall surface of the processing chamber, which peels off and causes dust generation, producing highly integrated semiconductor devices and liquid crystals. The ratio of non-defective products among the devices produced by the display device, that is, the product yield is lowered. In addition, while the production continues, there is a problem that the processing characteristics change and the product yield decreases.
[0013]
Dust is generated when the deposition film formed by plasma treatment on the processing chamber wall repeats temperature fluctuations due to changes in heat input from the plasma, which generates stress in the deposition film and increases the thickness of the film. As described above, peeling of the film starts and dust is generated.
[0014]
Japanese Patent Application Laid-Open No. 8-330282 discloses a plasma processing apparatus that increases the energy of ions incident on the surface on which the deposition film is formed to increase the removal rate of the deposition film in order to remove the deposition film formed on the inner wall surface. It is disclosed.
[0015]
In addition, a method is shown in which the deposit film on the inner wall surface is converted into a volatile substance and discharged by a vacuum exhaust system. A non-gaseous material is placed in the processing chamber, and this material reacts with the plasma to generate reactive species, which react with the deposition film to convert the deposition film into volatile materials and clean it. This is disclosed in Japanese Utility Model Laid-Open No. 7-153751.
[0016]
As a method for stabilizing the processing characteristics of plasma processing, Japanese Patent Laid-Open No. 6-188220 and Japanese Patent Laid-Open No. 61-8927 disclose a method of controlling the inner wall surface of a plasma processing chamber at a constant temperature, and cooling with a fluid having a parallel structure. An apparatus provided with an electrode to be used is disclosed.
[0017]
[Problems to be solved by the invention]
As semiconductor elements are highly integrated and production substrates have a large diameter, selection ratio with the base material, high-performance processing shape, uniform treatment of large-diameter substrates, and reduction of dust generation are further required.
[0018]
1) One of the factors that greatly affects the processing characteristics such as the etching ratio by plasma and the selectivity of CVD processing, processing shape, film quality, etc. is the active species generated by electron collision in the plasma. The generation amount of the active species and the generated active species are determined by the energy status of electrons in the plasma.
[0019]
The energy state of electrons in the plasma is determined by the collision frequency due to the processing pressure, the annihilation ratio due to diffusion of electrons in the plasma, and the like. The energy state of electrons in plasma becomes a statistical distribution due to collisions with neutral molecules, ions, etc., and it is difficult to control the distribution, except changing the statistical distribution by changing the collision frequency like pressure. there were. Therefore, conventionally, a method of controlling the processing pressure has been taken to control the electronic energy state. However, in the method of controlling the processing pressure, it is difficult to achieve both the fine processability and the selection ratio of the etching process, and in plasma CVD, it is difficult to achieve both the film formation speed, the film quality, and the cover performance of the element surface.
[0020]
  The purpose of the present invention is toAn object of the present invention is to provide a plasma processing apparatus or a processing method having a high selectivity and capable of fine processing.
[0021]
2) Regarding the uniformity of plasma processing, it is necessary to be compatible with active species control, ion energy control, and low-pressure high-density plasma generation technology.
[0022]
In addition, with the increase in the diameter of the processing substrate, the processing gas flows from the central part of the substrate to the outer peripheral part in the etching process and the CVD process, so that the active species concentration distribution and the distribution of the deposition film become obvious, and the entire surface of the large-diameter substrate is exposed. It has become difficult to perform uniform processing. Therefore, in order to solve these problems, it is necessary to cancel the factor that makes the distribution inhomogeneous with another etching characteristic control factor. As one control factor for this, it is necessary to be able to adjust the plasma unevenness distribution for each process condition independently of other process conditions such as plasma density and pressure.
[0024]
3) In order to reduce dust generation, removal of the deposit film adhering to the inside of the processing chamber has been studied as a conventional technique, but the method of vaporizing and exhausting the deposit film requires time to vaporize the deposit film. However, there are problems such as lowering productivity. In addition, the surface after the deposition film is removed is altered by exposure to radicals and ions in the plasma, and the reaction on the wall surface changes to affect the plasma processing characteristics.
[0025]
In addition, surfaces having different states such as a surface to which high-frequency power is applied and a grounded surface are mixed on the wall surface of the plasma processing chamber, and it is necessary to reduce dust generation corresponding to these surfaces.
[0027]
[Means for Solving the Problems]
In the present invention, the above problems have been solved by the following means.
[0028]
  That is, the above-mentioned purpose is to open a processing chamber in which the inside is evacuated and decompressed, a support electrode that is placed in the processing chamber and supports a substrate to be processed, and supports this, and a space for the support electrode is provided. A plate-like electrode which is arranged substantially in parallel above and is combined with the support electrode to form plasma, a power source for applying high-frequency power to the plate-like electrode, and the plate-like electrode above the support electrode With electrodesFor insulation betweenAdjacent through a dielectricOn the outer peripheral side of this flat electrodePlacedA high frequency power having a phase different from that of the high frequency supplied to the plate-like electrode,A high frequency electric field formed between the flat plate electrodes is achieved by a plasma processing apparatus including an electrode radiated into the processing chamber.
[0030]
  Further, the plate-like electrode has a disk shape, and the electrode disposed adjacent to the plate-like electrode is achieved by a plasma processing apparatus arranged adjacent to the outer peripheral side of the plate-like electrode. The
[0031]
  Furthermore, this is achieved by a plasma processing apparatus in which the adjacent electrodes are arranged on the upper portion of the processing chamber and are wall members constituting the same.
[0033]
  Furthermore, this is achieved by a plasma processing apparatus provided with a magnetic field generating means that is disposed on the outer periphery of the processing chamber below the plate-like electrode and supplies a magnetic field into the processing chamber.
[0034]
  In addition, the object is to place a substrate to be processed on a supporting electrode arranged in a decompressed processing chamber, and to arrange a plate-like electrode from a power source substantially parallel above the space for the supporting electrode. A high-frequency electric power is applied to combine with the support electrode to form plasma, and above the support electrode, the plate electrodeFor insulation betweenAdjacent through a dielectricOn the outer peripheral side of this flat electrodePlacedThe high frequency power having a phase different from that of the high frequency supplied to the flat electrode is supplied toThis is achieved by a plasma processing method in which a high-frequency electric field formed between an electrode and the flat electrode is radiated into the processing chamber to process the substrate.
[0035]
  Furthermore, the present invention is achieved by a plasma processing method for processing a substrate by supplying a magnetic field parallel to the substrate into the processing chamber from magnetic field generating means disposed on the outer periphery of the processing chamber below the plate-like electrode.
[0038]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention is shown in FIGS.
[0039]
A first embodiment will be described with reference to FIG.
[0040]
In FIG. 1, a support base 3 that supports a processing target is installed in a processing chamber 9, and a processing target 4 is placed on the support base 3. The processing object 4 is, for example, a semiconductor element wafer. A part of the wall of the processing chamber is an electrode 2, and a parallel plate electrode is formed with the support 3 having the function of an electrode. The support 3 and the object to be processed 4 are usually flat, but the electrode 2 may be flat, or may have stepped steps as shown in FIG. You may have a curved part like (b). Regardless of the case of the electrode 2 shown in FIGS. 1, 2 (a), and 2 (b), the set of the electrode 2 and the support base 3 is hereinafter referred to as a parallel plate electrode. Normally, the electrode 2 is in contact with the processing chamber 9, but a cover made of an insulator or the like may be provided between the electrode 2 and the processing chamber 9. A processing gas is introduced into the processing chamber 9 by the gas supply means 7. For example, as shown in FIG. 1, the electrode 2 sometimes has a function of a processing gas introduction path.
[0041]
Further, the processing chamber 9 is evacuated by an evacuation means (not shown) and is kept in a low pressure state. The processing chamber 9 is surrounded by, for example, a cylindrical and grounded side wall portion 6, and the electrode 2 and the side wall portion 6 are electrically insulated by an insulating portion 5. The power source 1 is, for example, a combination of an AC power source and a matching circuit. The processing gas inside the processing chamber 9 is turned into plasma by the power applied by the power source 1 to the parallel plate electrodes, and the plasma activates the processing gas to generate various types of active species. Further, an antenna 11 is installed in the vicinity of the insulator 5, and the insulator 5 has a window function for introducing electromagnetic waves generated by the antenna 11 into the processing chamber 9. The antenna 11 has one or a plurality of power input ends and output ends, and may be a loop antenna wound around one turn or more, or may be a divided loop antenna obtained by dividing a turn into a plurality of turns. Any antenna that radiates electromagnetic waves may be used as long as it has other shapes. The power supply 12 supplies power to the antenna 11, but the power supply 1 may apply power to the electrode 2 and the antenna 11.
[0042]
When the antenna 11 induces a current in the electrode 2, for example, if an insulating region such as a slit that inhibits the induced current is provided in the electrode 2 as shown in FIG. 3, the power of the antenna is introduced into the processing chamber. It may be easier to do. For example, the antenna 11 induces an electric field 14 as shown in FIG. 1 in the processing chamber to generate plasma. Since this antenna generates plasma in the vicinity of the side wall portion 6, the state of the wall surface of the side wall portion 6 can be controlled by adjusting the power from the power source 12.
[0043]
In addition, radicals excited by the plasma by the antenna 11 diffuse and penetrate into the gaps between the parallel plate electrodes. However, since the composition is different from the active species excited by the plasma by the parallel plate electrodes, The radical composition in the processing chamber can be controlled by adjustment.
[0044]
In the apparatus of FIG. 1, a magnetic field can be further applied to the processing chamber by the magnetic field generating means 13. For example, a magnetic field having a distribution as indicated by the lines of magnetic force 15 can be generated using a cylindrical solenoid coil. When the oscillating electric field 14 generated by the antenna and the magnetic field lines 15 are substantially perpendicular, the plasma can be generated particularly efficiently by combining the frequency of the electric field 14 and the intensity of the magnetic field 15 so as to cause electron cyclotron resonance. For example, when the frequency of the oscillating electric field is 68 MHz, electron cyclotron resonance occurs near a magnetic field strength of 24 gauss.
[0045]
Further, by adjusting the magnetic field strength within a range close to the electron cyclotron resonance magnetic field, the radical component ratio can be adjusted, and the performance of microfabrication can be optimized.
[0046]
Furthermore, electromagnetic waves can propagate in the plasma along the magnetic field in places where the magnetic field strength is stronger than the electron cyclotron magnetic field. Therefore, as shown in FIG. 1, the antenna and the magnetic field distribution are set so that the lines of magnetic force passing through the antenna pass through the place where the plasma is desired to be generated in the processing chamber, thereby improving the efficiency of plasma generation.
[0047]
Next, a second embodiment will be described with reference to FIG.
[0048]
4 is almost the same as the apparatus of FIG. 1 except that the antenna 11 installed on the upper surface of the processing chamber 9 is installed on the side surface of the processing chamber. . In FIG. 4, the electromagnetic wave of the antenna 11 is surrounded by the conductor wall 8 ′ so as not to leak outside, but the conductor wall 8 and the conductor wall 8 ′ may be integrated. Another feature of the apparatus of FIG. 4 is that the installation position of the magnetic field generating means 13 such as a solenoid coil is set downward so that the magnetic lines 15 passing through the antenna 11 installed on the side of the processing chamber pass through the processing chamber. It is in the point which has been arranged. Thus, as described in the embodiment of FIG. 1, when a magnetic field stronger than the electron cyclotron resonance magnetic field is applied, the electromagnetic wave radiated from the antenna easily enters the plasma in the processing chamber, thereby increasing the plasma generation efficiency. Yes.
[0049]
Next, a third embodiment will be described with reference to FIG.
[0050]
The apparatus of FIG. 5 has substantially the same configuration as the apparatus of FIG. 4 except that the antenna 11 is installed in the processing chamber. When the antenna is directly exposed to the plasma in the processing chamber and the antenna itself is shaved and adversely affects microfabrication, the surface of the antenna may be coated with a material that is difficult to cut by plasma, or the antenna may be covered with a cover made of an insulator. . By installing the antenna in the inside of the processing chamber as in the embodiment of FIG. 5, the antenna can be provided even when there is not enough space for installing the antenna on the upper surface or side surface of the processing chamber.
[0051]
Next, a fourth embodiment will be described with reference to FIG.
[0052]
The configuration of the apparatus of FIG. 6 is the same as that of the apparatus of FIG. 5, but the apparatus of FIG. 6 is characterized in that the antenna 11 is installed above the electrode 2. In the case of the apparatus of FIG. 6, the electrode 2 has an insulating portion such as a slit as shown in FIG. 3, and at least a part of the electromagnetic field induced by the antenna 11 passes through the electrode 2 and propagates to the processing chamber 9. It is possible to generate plasma or give energy to plasma. In this case, since plasma is generated by the parallel plate electrode and the antenna in the gap between the electrode 2 and the support base 3, the electron energy of the plasma immediately above the object to be processed is adjusted by the power supplied to the antenna, thereby improving the performance of the fine processing. Is possible.
[0053]
Next, a fifth embodiment will be described with reference to FIG.
[0054]
A feature of the apparatus of FIG. 7 with respect to the apparatus of FIG. 1 is that an antenna electrode 16 in which the antenna 11 and the electrode 2 of FIG. 1 are integrated is used.
[0055]
An example of the antenna electrode is shown in FIG. The antenna electrode includes one or a plurality of electrode portions 18, one or a plurality of antenna portions 19 connected thereto, an input end 20, and an output end 21. An example of the antenna electrode is shown in FIGS. 9 (a), 9 (b), 9 (c), and 9 (d). In particular, in FIG. 9C, a slit-like insulating region is provided so as to inhibit the induced current caused by the electromagnetic wave radiated from the antenna unit 19 in the electrode unit 18 to increase the radiation efficiency of the electromagnetic wave of the antenna unit.
[0056]
In the example shown in FIGS. 7 and 9, the electrode portion and the antenna portion are on the same plane, but the electrode portion and the antenna portion may have a three-dimensional configuration. For example, there is an antenna electrode in which the antenna unit is installed directly above the electrode unit. A part of the electric power applied to the input terminal 20 by the power source 1 is used for plasma generation by the parallel plate electrodes formed by the electrode unit 18 and the support base 3, and the rest is radiated as electromagnetic waves from the antenna unit 19 to generate plasma in the processing chamber. Generate. The output terminal may be grounded, or may be grounded via a voltage maintaining means composed of a capacitor or the like in order to maintain the voltage of the electrode portion of the antenna electrode.
[0057]
Further, the input end and the output end may be switched and connected. When this antenna electrode is used, only one power source is required for each electrode and antenna. In FIG. 7, the electrode portion of the antenna electrode is exposed to the processing chamber and the antenna portion is outside the processing chamber, but the electrode portion may be provided with a cover made of an insulator or the like.
[0058]
Further, as shown in FIG. 8, the antenna portion may be installed inside the processing chamber, or a cover such as an insulator may be provided on the antenna portion. The apparatus shown in FIGS. 7 and 8 has substantially the same effect as the apparatus shown in FIG. 1, and can improve the performance of the fine processing of the processing object.
[0059]
Next, a sixth embodiment will be described with reference to FIG.
[0060]
In the apparatus of FIG. 10, a power source 12 for applying electric power is provided between the outer peripheral electrode 23 and the side wall 6 in order to generate plasma near the side wall 6 in the processing chamber. Since the plasma generated by the outer peripheral electrode 23 is in the vicinity of the side wall portion, the state of the side wall surface can be controlled, and the performance of the fine processing can be improved. If the frequencies of the power source 1 and the power source 12 are different, plasmas having different electron temperatures are generated, and the performance of microfabrication can be optimized by adjusting the radical component ratio as in the apparatus of FIG. Furthermore, if the magnetic field generating means 13 is installed so that the direction of the electric field 14 ′ generated by the outer peripheral electrode 23 is almost perpendicular to the magnetic field lines 15, and the magnetic field strength is set to be the electron cyclotron resonance magnetic field strength in the vicinity of the outer peripheral electrode, The efficiency of plasma generation by the electrodes can be increased.
[0061]
Next, a seventh embodiment will be described with reference to FIG.
[0062]
In the processing chamber 51, a stage electrode 52 and a counter electrode 53 are provided facing each other. The main body of the processing chamber 51 is formed of a grounded metal container, the upper part is formed of a quartz plate 54, and the processing chamber 51 is connected to the quartz plate, and the joint between each electrode has a vacuum seal structure. The processing chamber: 51 has a structure that can be evacuated to a vacuum. Further, the processing chamber 51 has a processing gas supply mechanism (not shown), and the pressure in the processing chamber 51 can be controlled to a target pressure by an exhaust control mechanism (not shown) while supplying the processing gas.
[0063]
The stage electrode 52 has a structure in which a processing substrate 55 can be placed, and a temperature control mechanism (not shown) can control the temperature of the processing substrate 55 during plasma processing. The stage electrode 52 is connected to a bias power source (2 MHz) 56 that controls the energy of ions incident on the processing substrate.
[0064]
The counter electrode 53 is composed of high frequency application ring electrodes 53a and 53b and a ground ring electrode 53c, and a high frequency power supply 57 of 100 MHz is connected to the high frequency application ring electrodes 53a and 53b. : 53c is grounded.
[0065]
A coil 58 is provided on the outer periphery of the processing chamber 51 so that a magnetic field can be formed and formed in the processing chamber.
[0066]
Next, an operation example in the etching process according to this embodiment will be described.
[0067]
The processing substrate: 55 is carried in and placed on the stage electrode: 52. An etching gas (fluorocarbon gas) having a set flow rate is supplied from an etching gas supply source (not shown), and exhaust is controlled so that the pressure in the processing chamber becomes 1 Pa. A silicon oxide film and a silicon film which are insulating films of semiconductor elements are formed on the processing substrate. The processing substrate is electrostatically adsorbed to the stage electrode 52, and He gas is supplied between the substrate and the stage electrode 52 from a helium gas supply source (not shown) to prevent a temperature rise during the etching process of the processing substrate. To do.
[0068]
A high frequency power ring electrode of 53 MHz, 53b, which is a counter electrode, is supplied with 1.5 kW of high frequency power of 100 MHz, and plasma is generated by discharge. Since the high-frequency application ring electrodes 53a and 53b and the vacuum atmosphere in the processing chamber are separated by a quartz plate 54, energy is supplied to the plasma by capacitive coupling. In this case, since the electric field formed at the interface between the sheath and the plasma is small, the electron energy distribution is close to the Maxwell-Boltzmann distribution.
[0069]
A high-frequency electric field E is formed between the high-frequency applying ring electrodes 53a and 53b and the earth ring electrode 53c, and a magnetic field is formed from this electric field. Due to the capacitive coupling discharge, the plasma density is 10^TenSince the electromagnetic wave radiated cannot travel into the plasma because it reaches the / cm3 range, an electric field is generated in the vicinity of the quartz plate 54, so that the electric field can directly accelerate and receive energy by this electric field. In this case, only the electrons near the quartz plate receive energy, and the proportion thereof is small, but the energy level of the electrons is higher than that of plasma generated by capacitive coupling.
[0070]
As described above, in this embodiment, the energy supplied to the plasma has two paths, that is, capacitive coupling and direct heating by a high-frequency electric field, and the energy level received by the electron differs depending on each path. The energy status of electrons can be changed by changing the ratio. As a changing method, there are a method of changing the thickness of the quartz plate 54, and a method of changing the interval between the high frequency ring electrode and the earth ring electrode. Increasing the thickness of the quartz plate increases the impedance of capacitive coupling, increases the discharge voltage, increases the proportion of electromagnetic radiation, decreases the proportion of power supplied by capacitive coupling, and increases the energy level of electrons. When the interval between the high-frequency ring electrode and the earth ring electrode is narrowed, the high-frequency electric field becomes stronger and the proportion of electromagnetic radiation increases, and similarly the energy level of electrons increases. By reversing these, it is possible to approach the energy level due to discharge only by capacitive coupling.
[0071]
Bias power supply: When 500 W of 2 MHz high frequency power is applied from 56, a voltage of 700 Vpp is generated, and ions from the plasma can be accelerated and made incident on the substrate. Etching decomposed by the plasma with the assistance of ions on the substrate surface Etching proceeds when the gas (fluorocarbon gas) reacts with the silicon oxide film or silicon film.
[0072]
When the energy level of electrons is high, decomposition of the carbon fluoride gas proceeds, the amount of fluorine radicals increases, and the etching rate of the silicon film improves. Moreover, the etching cross-sectional shape becomes nearly vertical under such a gas decomposition condition, and a forward taper shape is likely to occur under the condition where the decomposition does not proceed. In the manufacture of semiconductor devices, it is necessary to make the etching rate of the silicon film as small as possible relative to the etching rate of the silicon oxide film that is an insulating film, and to make the etching cross-sectional shape as close as possible to the vertical. For that purpose, it is necessary to appropriately control the decomposition state of the fluorocarbon-based gas and find a condition for making both compatible.
[0073]
In the present invention, as described above, by adjusting the thickness of the quartz plate, the interval between the high frequency ring electrode and the earth ring electrode, etc., the decomposition state of the fluorocarbon gas can be controlled, and the etching characteristics can be optimized. it can.
[0074]
In addition, the distribution of plasma can be changed by changing the dimensions of the high-frequency applying ring electrodes 53a and 53b and the earth ring electrode.
[0075]
Next, another electronic energy control method in this embodiment will be described.
[0076]
As described above, a high-frequency electric field E is formed between the high-frequency applying ring electrodes 53a and 53b and the earth ring electrode 53c, and electromagnetic waves are radiated. Could not proceed into the plasma, but only supplied energy to the electrons near the quartz plate. In this control method, an electric current is passed through the coil 58 to form a magnetic field B so that electromagnetic waves can travel into the plasma. In addition, the intensity of the magnetic field can be set including the conditions that cause electron cyclotron resonance with respect to the frequency of the electromagnetic wave, and the energy level given to the electrons is controlled by controlling the electromagnetic wave emission to the capacitively coupled discharge plasma and the magnetic field intensity. It was made possible to control to an appropriate electronic energy state.
[0077]
Even at a frequency of 100 MHz, when a magnetic field is formed, there is a condition that the electromagnetic wave can travel into the plasma. At this time, the magnetic field must be in a direction substantially perpendicular to the electric field of the electromagnetic wave. Therefore, the acceleration of electrons by the high-frequency electric field is restricted by the magnetic field, and the energy received by the electrons from the high-frequency electric field is small, and the energy state of the electrons is only slightly increased. Therefore, it is effective for increasing low energy electrons such as generation of active species.
[0078]
When set to 30 to 40 G, which is close to the magnetic field intensity causing electron cyclotron resonance at 100 MHz, energy is efficiently supplied to the electrons in the plasma from the high frequency electric field of the electromagnetic wave, and the energy level of the electrons can be raised to an ionization level or higher. The decomposition of the etching gas can be promoted.
[0079]
In this way, by changing the magnetic field strength, the energy of electrons can be controlled from the level suitable for generating radicals to above the ionization level, and by adjusting the magnetic field strength, the decomposition state of the etching gas is made appropriate, and the etching characteristics are optimized. Can be achieved.
[0080]
Next, an eighth embodiment will be described with reference to FIG.
[0081]
This embodiment is another embodiment for the portions corresponding to the high-frequency applying ring electrodes 53a and 53b and the earth ring electrode 53c forming the counter electrode 53 shown in FIG.
[0082]
As shown in FIG. 12, a high-frequency electric field is generated between the high-frequency applying plate electrode: 60 and the ground plate electrode: 61 which are composed of a high-frequency applying plate electrode: 60 and a ground plate electrode: 61 and are opposed to each other in a comb shape. Electromagnetic waves are emitted according to the same principle as explained. Moreover, the point that the high frequency application plate supplies electric power to the plasma by capacitive coupling is the same as that of the first embodiment.
[0083]
Since the operations and functions for the electronic energy state control are the same except for the above points, they are omitted here.
[0084]
Next, a ninth embodiment will be described with reference to FIG.
[0085]
In the processing chamber: 70, a stage electrode: 52 and a counter electrode: 71 are provided to face each other. The processing chamber: 70 and each electrode are insulated by an insulating material: 72a and an insulating material: 72b. The joint with the chamber 70 has a vacuum seal structure, and the processing chamber 70 can be evacuated to a vacuum. A 100 MHz high frequency power supply 57 and a low pass filter 73 are connected to the counter electrode 71.
[0086]
The processing chamber 70 is grounded, and a coil 58 is provided on the outer periphery thereof to form a magnetic field in the processing chamber. The processing chamber 70 has a processing gas supply mechanism (not shown), and the pressure in the processing chamber 70 can be controlled to a target pressure by an exhaust control mechanism (not shown) while supplying the processing gas.
[0087]
The stage electrode 52 has a structure in which a processing substrate 55 can be placed, and a temperature control mechanism (not shown) can control the temperature of the processing substrate 55 during plasma processing. The stage electrode 52 is connected to a bias power source (2 MHz): 56 and a high-pass filter 74 that control the energy of ions incident on the processing substrate.
[0088]
Next, an operation example in the etching process according to this embodiment will be described.
[0089]
In FIG. 13, a processing substrate 55 is carried into and placed on a stage electrode 52. An etching gas (fluorocarbon gas) having a set flow rate is supplied from an etching gas supply source (not shown), and exhaust is controlled so that the pressure in the processing chamber becomes 1 Pa. A silicon oxide film and a silicon film which are insulating films of semiconductor devices are formed on the processing substrate. The processing substrate is electrostatically adsorbed to the stage electrode 52, and He gas is supplied between the substrate and the stage electrode 52 from a helium gas supply source (not shown) to prevent a temperature rise during the etching process of the processing substrate. To do.
[0090]
Counter electrode: A high frequency power of 100 MHz is applied to 71 at 1.5 KW, and plasma is generated by discharge. A sheath is formed between the counter electrode 71 and the plasma, and energy is supplied to the plasma by capacitive coupling. In this case, since the electric field formed at the interface between the sheath and the plasma is small, the electron energy distribution is close to the Maxwell-Boltzmann distribution.
[0091]
A high-frequency electric field E is formed between the counter electrode 71 and the processing chamber 70, and electromagnetic waves are radiated.
[0092]
An electric current was passed through the coil 58 to form the magnetic field B, and the strength of the magnetic field could be set with conditions for causing electron cyclotron resonance with respect to the frequency of the applied high frequency.
[0093]
Even at a frequency of 100 MHz, when a magnetic field is formed, there is a condition that the electromagnetic wave can travel into the plasma. At this time, the magnetic field must be in a direction substantially perpendicular to the electric field of the electromagnetic wave. Therefore, the acceleration of electrons by the high-frequency electric field is restricted by the magnetic field, and the energy received by the electrons from the high-frequency electric field is small, and the energy state of the electrons is only slightly increased. Therefore, it is effective for increasing low energy electrons such as generation of radicals.
[0094]
When set to 30 to 40 G, which is close to the magnetic field intensity causing electron cyclotron resonance at 100 MHz, energy is efficiently supplied from the high-frequency electric field of the electromagnetic wave to the electrons in the plasma, and the energy level of the electrons can be increased to an ionization level or higher. Thus, by changing the magnetic field strength, it is possible to control the energy of electrons from a level suitable for generating radicals to an ionization level or higher.
[0095]
Bias power supply: When 500 W of 2 MHz high frequency power is applied from 56, a voltage of 700 Vpp is generated, and ions from the plasma are accelerated by this voltage and incident on the substrate. The etching gas decomposed by the plasma with the assistance of ions on the substrate surface. Etching proceeds when (carbon fluoride gas) reacts with the silicon oxide film and the silicon film.
[0096]
When the energy level of electrons is high, decomposition of the fluorocarbon gas proceeds, the amount of fluorine-based active species increases, and the etching rate of the silicon film improves. Moreover, the etching cross-sectional shape becomes nearly vertical under such a gas decomposition condition, and a forward taper shape is likely to occur under the condition where the decomposition does not proceed. In the manufacture of semiconductor devices, it is necessary to make the etching rate of the silicon film as small as possible relative to the etching rate of the silicon oxide film that is an insulating film, and to make the etching cross-sectional shape as close as possible to the vertical. For that purpose, it is necessary to appropriately control the decomposition state of the fluorocarbon-based gas and find a condition for making both compatible.
[0097]
In the present invention, by changing the magnetic field strength, it is possible to control the decomposition state of the carbon fluoride gas, and the optimization of the etching characteristics such as the etching rate ratio between the silicon oxide film and the silicon film, the etching shape, the pressure, the etching gas flow rate, It can be controlled independently of the high frequency power.
[0098]
Next, a tenth embodiment will be described with reference to FIG.
[0099]
The basic configuration of this embodiment is the same as that of the embodiment shown in FIG. 13, and only the differences will be described here.
[0100]
The processing chamber 70 is not grounded and is connected to an 800 kHz bias power source 75 and a 100 MHz high pass filter 76.
[0101]
The stage electrode: 77 incorporates a substrate heating mechanism (not shown) so that the processing substrate can be heated to a set value between room temperature and 500 degrees Celsius.
[0102]
Next, an operation example in the plasma CVD process according to the present embodiment will be described.
[0103]
The processing substrate: 55 is carried in and placed on the stage electrode: 77. A CVD gas (silicon fluoride gas + oxygen gas) at a set flow rate is supplied from a CVD gas supply source (not shown), and the exhaust is controlled so that the pressure in the processing chamber becomes 4 Pa. The processing substrate is placed on the stage electrode: 77, and the temperature of the processing substrate is heated to 300 degrees Celsius. The counter electrode: 71 is supplied with high frequency power of 100 MHz and 1.5 KW, and a capacitively coupled discharge is generated between the counter electrode: 77 and the CVD gas is brought into a plasma state.
[0104]
A high voltage (1400 Vpp) of 100 MHz is generated in the counter electrode 71 from the high frequency power supply 57 and a high frequency electric field is generated between the counter electrode 71 and the processing chamber 70. Although the processing chamber 70 is not grounded, the high pass filter 76 is in the same state as being grounded with respect to a high frequency of 100 MHz, and radiates high frequency electromagnetic waves as in the embodiment shown in FIG.
[0105]
Silicon fluoride gas has strong bonds and does not decompose, and a large amount of fluorine is occluded in the silicon oxide film to be formed. In the same manner as the embodiment shown in FIG. 13 by the action of an electromagnetic wave of 100 MHz and a magnetic field, the energy level of electrons is controlled, the decomposition of the silicon fluoride gas is promoted, and the dissociated fluorine gas is exhausted. Occlusion in the film can be reduced and the film quality can be improved. Further, since the decomposition of the silicon fluoride gas is promoted, the reaction between the dissociated silicon and oxygen gas is also promoted, and the film formation rate can be improved.
[0106]
In this embodiment, the frequency characteristics of the high-pass filter 74 and the high-pass filter 76 are set to 200 MHz, which is a double frequency of the applied frequency, so that the applied frequency is a mixture of 100 MHz and 200 MHz due to the nonlinear characteristic of the plasma sheath. The resonance condition can be created even when the magnetic field strength is around 70 G. This double frequency mixing ratio can also be realized by changing the ratio between the reactance and capacitance of the matching unit.
[0107]
In plasma CVD, a silicon oxide film is also formed on the inner wall of a processing chamber, and these are peeled off to form particles, which is a problem in manufacturing semiconductor products. In this embodiment, a high frequency voltage of bias power source: 75 to 800 KHz can be applied to the inner wall surface of the processing chamber 70, thereby increasing the incident ion energy and fluorine generated by the decomposition of the silicon fluoride gas. Since the silicon oxide film formed on the inner wall surface of 70 is etched and removed, no film is attached to the wall surface of the processing chamber during film formation, and generation of particles can be reduced.
[0108]
Next, an eleventh embodiment will be described with reference to FIG.
[0109]
The basic configuration of this embodiment is the same as that of the embodiment shown in FIG. 13, and only the differences will be described here.
[0110]
The counter electrode 71 is composed of a counter electrode 71a and a counter electrode 71b. The respective electrodes are insulated from each other by an insulating material 80a, and are also insulated from the processing chamber 70 by an insulating material 80b. A high-frequency power source 81 and a high-frequency power source 82 are connected to each electrode, and the high-frequency power source 81 and the high-frequency power source 82 generate the same frequency (100 MHz in this embodiment) with a phase shift. To be applied.
[0111]
When high frequencies having different phases are applied to the counter electrode 71a and the counter electrode 71b, a high frequency electric field is generated between the counter electrode 71a and the counter electrode 71b. When the phase is shifted by 180 degrees, a high-frequency electric field can be generated most efficiently, and when the phase shift is 0 degree, the high-frequency electric field becomes the weakest. By controlling the power of the phase control and the high-frequency power source: 81, 82, the high-frequency electromagnetic power generated between the counter electrodes 71a, 71b and the high-frequency power generated between the counter electrode 71b and the processing chamber 70 are controlled. The ratio of electromagnetic wave power can be controlled, and the uniformity of the etching process and plasma CVD process can be controlled. Further, by controlling the power of the high-frequency power sources 81 and 82, it is possible to control the supply power ratio by capacitive coupling and to control the uniformity.
[0112]
Furthermore, although two high-frequency power supplies are used in this embodiment, the phase is shifted by inserting capacitance or reactance between the power lines supplied from one power supply to the counter electrodes 71a and 71b. The same effect can be obtained.
[0113]
Next, a twelfth embodiment will be described with reference to FIG.
[0114]
In the processing chamber 70, a stage electrode 52 and a counter electrode 71 are provided to face each other. The processing chamber 70 can be evacuated by an exhaust mechanism (not shown) and set by an etching gas supply mechanism (not shown). A flow rate of etching gas is supplied to maintain the set pressure.
[0115]
The counter electrode 71 is composed of counter electrodes 71a, 71b and 71c, and the electrodes are insulated from each other by insulating materials 80a and 80b made of quartz. Further, the processing chamber 70 is also insulated by the insulating material 80c. A high frequency power source 82 is connected to the counter electrode 71b, a high frequency power source 81 is connected to the counter electrode 71c, and a high frequency power source 81 is connected to the counter electrode 71a via a capacitor 83. The high frequency power source 81 and the high frequency power source 82 are configured to amplify the signal from the signal generator 97, and the signal generator 97 can control the phase and amplitude of the high frequency signal supplied to each power source. ing. In this embodiment, the signal frequency is 100 MHz.
[0116]
Corresponding electrodes: 71a, 71b, 71c are grounded through a low-pass filter (not shown) so that a 10 MHz frequency of bias power source 56 passes through, and a high frequency current of the bias power source 56 flows through the counter electrode. is there.
[0117]
The counter electrode 71 is provided with refrigerant flow paths 84a, 84b and 84c, connected to a circulator (not shown), and a temperature-controlled 15 ° C. refrigerant circulates.
[0118]
The counter electrode 71 is provided with etching gas supply passages 85a, 85b, and 85c, and an etching gas is supplied from an etching gas supply source (not shown) and ejected from gas supply ports 86a, 86b, and 86c. .
[0119]
Cover plates: 87a, 87b, 87c are fixed to the counter electrode: 71. The cover plate: 87a is made of a silicon single crystal plate, and the gas supply port: 86aa is provided at a position corresponding to the gas supply port: 86a, and the size thereof is from 1/4 to 1/10 of the gas supply port: 86a. It has become. The cover plate: 87b is made of a silicon single crystal plate, and the gas supply port: 86bb is provided at a position corresponding to the gas supply port: 86a, and its size is from 1/4 to 1 / of the gas supply port: 86a. It is 10. Cover plate: 87c is made of SiC.
[0120]
The processing chamber: 70 is provided with flow paths: 93a and 93b, and a temperature-controlled 50 ° C. refrigerant is circulated from a circulator (not shown), and the temperature of the inner wall surface of the processing chamber is ± 5 ° C. Can be controlled.
[0121]
Further, confinement plates 70 a and 70 b are integrally formed in the processing chamber 70, and the exhaust path 94 is perpendicular to the magnetic field B formed by the coil 58. In this portion, since the plasma diffuses across the magnetic field, the plasma does not spread and is confined.
[0122]
The stage electrode 52 is configured to be supplied with high frequency power of 10 MHz from the bias power source 56 and is configured not to cause abnormal discharge due to the insulating material 89 and the ground shield 90.
[0123]
The stage electrode 52 is provided with a flow path 88, and a -10 ° C refrigerant is circulated from a circulator (not shown). An electrostatic adsorption mechanism (not shown) is provided on the surface on which the processing substrate 55 of the stage electrode 52 is placed, and helium gas whose pressure is controlled to 3 KPa from a helium gas supply source (not shown) is electrostatically adsorbed to the processing substrate. The temperature of the processing substrate 55 being supplied during the mechanism and being etched is controlled to 50 ° C. to 100 ° C.
[0124]
A quartz cover: 91 is provided around the stage electrode: 52, and the thickness of the deposition electrode is such that the electric field strength that accelerates ions generated on the quartz cover surface by a high frequency of 10 MHz adheres to the quartz surface. The quartz cover 91 is removed and adjusted to a level that hardly etches. Further, a seal mechanism 92 is provided between the cover 91 and the stage electrode 52, and helium gas supplied between the processing substrate 55 and the electrostatic adsorption mechanism is supplied. As a result, the cover 91 is cooled by the stage electrode 52 and the temperature during the etching process can be controlled in the range of −10 ° C. to + 10 ° C.
[0125]
There is a deposition plate: 95 downstream of the exhaust, and a refrigerant at 25 ° C. circulates in a flow path: 96 formed inside. The deposition plate 95 is provided with fins in a direction that does not increase the exhaust resistance, so that the surface area in contact with the exhaust gas can be increased.
[0126]
Next, an operation example in the etching process according to this embodiment will be described.
[0127]
In this embodiment, a case where an oxide film is etched will be described.
[0128]
Argon and C4F8 gas are mixed and supplied from an etching gas supply source (not shown), and the inside of the processing chamber 70 is controlled to 2 Pa while exhausting. The etching gas is supplied from gas supply ports: 86a, 86aa, 86b, 86bb. At this time, the space between the cover plates 87a, 87b and 87c and the counter electrodes 71b, 71a and 71c is filled with 3 KPa of etching gas, whereby the cover plates 87a, 87b and 87c are temperature controlled counter electrodes 71. And is controlled to a temperature of 15 ° C to 50 ° C.
[0129]
A high frequency signal of 100 MHz is generated from the signal generator 97, high frequency power is supplied from the high frequency power sources 81 and 82 to the counter electrode 71, and discharge due to capacitive coupling is generated between the stage electrode 52 and the counter electrode 52.
[0130]
A high frequency voltage is applied between the counter electrode 71a and the counter electrode 71c by a capacitor 83 with a phase shift of 90 degrees. The high-frequency voltage between the counter electrode 71b and the counter electrode 71a can be set to any deviation from 0 degrees to 180 degrees by phase control of the high-frequency signal by the signal generator 97. Therefore, the high frequency voltage generated between the insulating material 80a can be increased or decreased by the phase control of the signal generator 97 with respect to the high frequency voltage generated between the insulating material 80b. Thereby, the electric power of the electromagnetic wave radiated from between the insulating material: 80a can be made higher or lower than the electric power radiated from between the insulating material: 80b.
[0131]
When power is supplied to a coil 58 from a DC power source (not shown) and a magnetic field of 30 to 40 G is generated, electrons in the plasma are accelerated by electron cyclotron resonance with the radiated 100 MHz electromagnetic wave, and the electron temperature rises and the plasma increases. Density increases, 1x10¹¹cm^-3The above plasma density can be generated. Further, the distribution of the plasma density can be controlled by controlling the radiation electromagnetic wave by the phase control of the high-frequency voltage applied to the counter electrode 71. Further, the plasma distribution due to capacitively coupled discharge can be controlled by controlling the outputs of the high frequency power sources 81 and 82, and the electron temperature distribution can also be controlled by controlling it together with the ratio of the radiated electromagnetic wave.
[0132]
In this example, the capacitively coupled discharge power increased the ratio supplied to the outer peripheral portion, and the discharge due to the radiation of electromagnetic waves increased the supplied power ratio to the central portion. As a result, the electron temperature in the central part is high and the outer peripheral part is low, and generation of fluorine radicals in the outer peripheral part where the decomposition of the etching gas proceeds is suppressed, so that uniform processing can be performed.
[0133]
When processing a large-diameter substrate, the thickness of the deposition film attached to the substrate surface at the center is larger than that at the outer periphery due to the influence of the flow of the etching gas, and the taper angle of the side surface of the etching pattern is also at the center in the etching shape. As a result, the etching shape is different between the central portion and the outer peripheral portion, and it becomes difficult to form a fine etching shape with high accuracy on the entire surface of the large-diameter substrate. In such a case, in the present invention, the plasma density distribution is controlled to be slightly convex distribution by increasing the electromagnetic radiation at the center, and the taper angle of the etching shape can be controlled by increasing the ion current at the center. A highly accurate etching process can be realized on the entire surface of the caliber substrate. Furthermore, in this process, the signal generator 97 signal phase can be set by the recipe of the etching apparatus in the same way as the process conditions are set, so even for processes with different etching conditions such as contact hole etching and through hole etching. , It can be set individually and there is no need to adjust the hardware configuration.
[0134]
Regarding the etching performance, high-density plasma can be generated even at a low pressure of 2 Pa. Therefore, the vertical contact hole can be etched at an etching rate of 900 nm / min, and both fine workability and productivity can be achieved. Regarding the selectivity, the decomposition of the etching gas can be controlled by controlling the electron temperature, and the process conditions that achieve both the fine workability and the selectivity can be expanded.
[0135]
During the etching process, the temperature of the surfaces of the cover plates 87a, 87b, 87c of the counter electrode 71 is controlled, and ions in the plasma are accelerated and incident by the applied high frequency voltage of 100 MHz. No deposition film is formed, and the surface of the silicon plate is slightly etched on the surface of the cover plates 87a and 87b, and SiC is slightly etched on the surface of the cover plate 87c, so that a new surface is always exposed. The reaction and outgassing are kept constant.
[0136]
Similarly, the surface of the cover: 91 of the stage electrode 52 is also slightly etched on the surface of the quartz by acceleration of incident ions by applying bias power and temperature control, and the reaction and gas emission at the surface are kept constant.
[0137]
Since the inner wall surface of the processing chamber 70 is grounded, incident ions are hardly accelerated, and a polymer film of C and F is formed on the inner wall surface. Since the surface is always formed with a new film, it can always be kept in a constant state, and since the surface temperature is kept at 50 ° C., there is no gas release from the deposition film, and the surface state and gas release are constant. Can be kept in.
[0138]
As a result, changes in etching characteristics due to repeated etching processes can be prevented, and no deposition film is formed on the counter electrode 71 and the stage electrode 52, and there is no surface alteration, so that dust is hardly generated. Since the surface of the processing chamber 70 to which the deposition film adheres is maintained at a constant temperature as described above, no force due to expansion or the like is generated between the adhesion film and the wall surface of the processing chamber, and the film is peeled off. Does not occur. With this and the countermeasures of the counter electrode and the stage electrode, the generation of dust can be greatly reduced in this embodiment.
[0139]
In the above embodiment, etching and CVD have been mainly described. However, the present invention is not limited to this, and it is obvious that the present invention can be similarly applied to a process using plasma such as plasma polymerization and sputtering. is there.
[0140]
Regarding the frequency of the high-frequency power source for generating plasma, in this embodiment, the case where the frequency is 68 MHz and 100 MHz has been described. However, this is a description of the condition in which the electromagnetic wave radiation effect is high. The same effect can be obtained by increasing the high frequency voltage. In principle, the frequency is not limited to a frequency, but the frequency at which an experimental effect has been confirmed at present is 10 MHz or more. Higher frequencies can be used in principle, but in terms of practicality, it is difficult to make a power supply at this time, a waveguide is required, the discharge voltage in capacitively coupled discharge is low, and electromagnetic radiation power cannot be increased. Since there is a problem, this example has not been described.
[0141]
In this embodiment, the magnetic field strength is described mainly in the vicinity of the electron cyclotron resonance condition. However, the experimental results show that the plasma density is improved even under a magnetic field condition of about 1/3 of the electron cyclotron resonance condition. The change in plasma density with respect to the magnetic field intensity increases with the magnetic field up to the electron cyclotron condition, and further increases the magnetic field intensity, the plasma density decreases. The plasma density level is lowered under the condition that no magnetic field is applied at double the magnetic field strength. Therefore, the magnetic field strength is not limited to the electron cyclotron resonance condition, but the effect is large near the electron cyclotron resonance condition. This phenomenon means that the energy supply from the radiated electromagnetic wave to the plasma can be controlled by the magnetic field by changing the magnetic field intensity, and this shows that the electron energy control can be performed by the magnetic field.
[0142]
In this embodiment, the plasma generation method has been described with a focus on a combined discharge of capacitively coupled discharge and electromagnetic radiation. Since this is intended to control the energy state of the electrons, this is mainly described. However, it is clear that the method of emitting electromagnetic waves by using a configuration in which a high-frequency voltage is applied between insulated conductor members itself can generate plasma, and can be a plasma generation technique. However, in this method, in order to prevent a high-frequency voltage from being lowered due to a capacitive coupling component with plasma, it is necessary to consider that the capacitance formed between the electrode and the plasma is as small as possible.
[0143]
The temperature control of the processing chamber 70 is also set to 50 ° C. in the present embodiment, but is not limited to this. When the temperature of the inner wall surface exceeds 200 ° C., a deposition film is not formed on the surface, and a new deposition surface cannot be formed at all times, and the decomposition of the adhered film also rapidly increases when the temperature exceeds 200 ° C. It is necessary to set the temperature. Practically, 10 ° C. to 80 ° C. is an easy-to-use temperature across the temperature of the environment where the apparatus is used.
[0144]
  In the above embodiment of the present invention,The energy state of the electrons can be controlled independently, thereby controlling the generation of active species and achieving both characteristics that are difficult to achieve with conventional technologies such as high selective etching and high accuracy, high speed etching, or film quality and film formation speed. I did it.
[0145]
  In the above embodiment,The plasma density distribution can be controlled without changing the hardware configuration, and a fine pattern can be etched with high precision over the entire large-diameter substrate.
[0146]
  Also,Generation of dust and plasma processing characteristics due to plasma processing can be prevented, and productivity of semiconductor elements and liquid crystal display elements can be improved.
[0147]
  further,As a result, the processing performance of semiconductor elements, liquid crystal display elements, etc. is improved, and higher performance devices can be produced, and these devices can be produced with high yield and high productivity.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing the configuration of a plasma processing chamber according to a first embodiment of the present invention.
FIG. 2 is an explanatory view showing another example of the electrode structure shown in the first embodiment.
FIG. 3 is an explanatory diagram showing another example of the electrode structure shown in the first embodiment.
FIG. 4 is an explanatory view showing the configuration of a plasma processing chamber according to a second embodiment of the present invention.
FIG. 5 is an explanatory view showing the configuration of a plasma processing chamber according to a third embodiment of the present invention.
FIG. 6 is an explanatory view showing the configuration of a plasma processing chamber according to a fourth embodiment of the present invention.
FIG. 7 is an explanatory view showing a configuration of a plasma processing chamber according to a fifth embodiment of the present invention.
FIG. 8 is an explanatory view showing another example of the electrode structure shown in the fifth embodiment.
FIG. 9 is an explanatory view showing another example of the antenna electrode structure shown in the fifth embodiment.
FIG. 10 is an explanatory view showing a plasma processing chamber configuration according to a sixth embodiment of the present invention.
FIG. 11 is an explanatory view showing an electrode configuration according to a seventh embodiment of the present invention.
FIG. 12 is an explanatory view showing a plasma processing chamber configuration according to an eighth embodiment of the present invention.
FIG. 13 is an explanatory view showing a plasma processing chamber configuration according to a ninth embodiment of the present invention.
FIG. 14 is an explanatory view showing a plasma processing chamber configuration according to a tenth embodiment of the present invention.
FIG. 15 is an explanatory view showing a plasma processing chamber configuration according to an eleventh embodiment of the present invention.
FIG. 16 is an explanatory view showing a plasma processing chamber configuration according to a twelfth embodiment of the present invention.
FIG. 17 is an explanatory diagram showing a configuration of a conventional plasma processing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Power supply, 2 ... Electrode, 2 '... Electrode, 2 "... Electrode, 2' '' ... Electrode, 3 ... Support stand, 4 ... Processing object, 5 ... Insulation part, 6 ... Side wall part, 7 ... Gas supply Means 8 ... Conductor wall 8 '... Conductor wall 9 ... Processing chamber 10 ... Power source 11 ... Antenna 11 ... Power source 13 ... Magnetic field generating means 14 ... Electric field generated by antenna 14' ... Peripheral electrode Electric field to be generated, 15 ... magnetic field lines, 16 ... antenna electrode, 17 ... insulator cover, 18 ... electrode portion, 19 ... antenna portion, 20 ... power input end, 21 ... power output end, 22 ... insulating portion, 23 ... outer peripheral electrode 51 ... Processing chamber, 52 ... Stage electrode, 53 ... Counter electrode, 55 ... Processing substrate, 56 ... Bias power source, 57 ... High frequency power source, 58 ... Coil, 70 ... Processing chamber, 71 ... Counter electrode, 81 ... High frequency power source, 82: high frequency power source, 87: cover plate, 91: cover.

Claims (6)

A processing chamber in which the inside is evacuated and decompressed, a support electrode that is placed in the processing chamber and supports the substrate to be processed, and supports the substrate, and a space above the support electrode is disposed substantially in parallel. A flat electrode for forming plasma by being coupled with the support electrode, a power source for applying high-frequency power to the flat electrode, and insulation between the flat electrode above the support electrode An electrode disposed adjacent to the outer periphery of the plate-like electrode via a dielectric for supplying a high-frequency power having a phase different from that of the high-frequency supplied to the plate-like electrode. A plasma processing apparatus comprising: an electrode from which a high-frequency electric field formed between the flat electrodes is radiated into the processing chamber. The plasma processing apparatus according to claim 1, wherein the flat electrode has a disk shape, and an electrode disposed adjacent to the flat electrode is disposed on an outer peripheral side of the flat electrode. An adjacent plasma processing apparatus.   3. The plasma processing apparatus according to claim 1, wherein the adjacent electrode is a wall member that is disposed on and constitutes an upper part of the processing chamber.   The plasma processing apparatus according to any one of claims 1 to 3, further comprising a magnetic field generation unit that is disposed under the flat electrode on the outer periphery of the processing chamber and supplies a magnetic field to the processing chamber. apparatus. A substrate to be processed is placed on a support electrode placed in a decompressed process chamber, and high-frequency power is applied from a power source to a plate-like electrode placed substantially in parallel above the space of the support electrode. It is combined with the support electrode to form plasma, and is disposed on the outer peripheral side of the plate-like electrode adjacent to the plate-like electrode via a dielectric material for insulation with the plate-like electrode. A high frequency electric power having a phase different from that of the high frequency supplied to the flat electrode is supplied to the electrode, and a high frequency electric field formed between the electrode and the flat electrode is radiated into the processing chamber. Plasma processing method for processing.   6. The plasma processing method according to claim 5, wherein a magnetic field parallel to the substrate is supplied into the processing chamber from a magnetic field generating means disposed below the flat electrode on the outer periphery of the processing chamber. A plasma processing method for processing.

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