JP2010182884A - Semiconductor light-emitting device and wiring substrate for light-emitting chip mounting - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with improved practical luminance and light extraction efficiency; and to provide a wiring substrate for light-emitting chip mounting, applied to the semiconductor light-emitting device. <P>SOLUTION: The semiconductor light-emitting device 1 includes an insulating substrate 10 on which a semiconductor light-emitting element chip 2 has been mounted, and further includes, on a surface 10s of the insulating substrate 10, a chip arrangement region Ac where the semiconductor light-emitting element chip 2 has been arranged and an outer peripheral region Af enclosing the chip arrangement region Ac, and also includes a first resin film 21 laminated and formed on the outer peripheral region Af and containing dispersed rutile type titanium oxide particulates. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device including an insulating substrate on which a semiconductor light emitting element chip is placed, and a light emitting chip mounting wiring substrate applied to such a semiconductor light emitting device.

  Semiconductor light emitting devices capable of operating with low power consumption have been widely used as light sources and signal sources due to improvements in light emission efficiency and expansion of the light emission wavelength region due to semiconductor light emitting elements. However, improvement proposals including not only semiconductor light emitting device chips but also mounting techniques and package techniques have been made with the aim of further improving the characteristics.

  For example, a technique has been proposed in which a semiconductor light emitting element chip is mounted on a substrate and a wall is provided around the substrate to generate reflected light to improve characteristics (see, for example, Patent Document 1).

  According to this prior art, a transfer mold that requires a large mold is applied to form the wall portion. In addition, the wall portion needs to have an inclination for reflection.

  Therefore, the facility becomes large and there is a risk of increasing the cost. In addition, since the reflection efficiency is improved by using the wall as a reflection surface, the optical design of the wall is required, the structure is complicated, and a large area is required to configure the inclined surface of the wall, etc. There are many challenges. Further, the visible light reflectance is 70% (the actual upper limit is 85%), and a sufficient reflectance (light extraction efficiency) could not be realized.

JP 2007-329249 A

  The present invention has been made in view of such a situation, and the reflection efficiency is improved by a simple configuration including a first resin film containing dispersed rutile-type titanium oxide fine particles on the outer periphery of a semiconductor light emitting element chip. Thus, an object of the present invention is to provide a semiconductor light emitting device in which substantial luminance and light extraction efficiency as a whole semiconductor light emitting device are improved.

  Further, the present invention has a simple configuration including a first resin film formed by laminating and containing rutile-type titanium oxide fine particles formed by laminating on an outer peripheral region surrounding a chip arrangement region on which a semiconductor light emitting element chip is placed. Another object of the present invention is to provide a wiring board for mounting a light-emitting chip that can improve the reflection efficiency and improve the substantial luminance and light extraction efficiency of the entire semiconductor light-emitting device.

  A semiconductor light-emitting device according to the present invention is a semiconductor light-emitting device including an insulating substrate on which a semiconductor light-emitting element chip is placed, and surrounds the chip placement area where the semiconductor light-emitting element chip is placed, and the chip placement area And a first resin film which is formed by laminating the outer peripheral region on the surface of the insulating substrate and containing rutile-type titanium oxide fine particles dispersed therein.

  With this configuration, the light emitted from the semiconductor light emitting element chip can be reliably reflected in the forward direction on the surface of the first resin film (the surface side of the light emitting chip mounting wiring board), thus improving the reflection efficiency. Thus, the substantial luminance and light extraction efficiency of the semiconductor light emitting device as a whole can be improved.

  In the semiconductor light emitting device according to the present invention, the height of the surface of the semiconductor light emitting element chip is lower than the height of the surface of the first resin film.

  With this configuration, it is possible to reliably and efficiently reflect the light from the semiconductor light emitting element in the forward direction.

  The semiconductor light emitting device according to the present invention includes a second resin film that is formed by laminating in the chip arrangement region and contains rutile-type titanium oxide fine particles dispersed therein.

  With this configuration, the light emitted to the back surface side of the semiconductor light emitting element chip can be effectively reflected in the front direction on the surface of the second resin layer, and the luminance and light extraction efficiency can be further improved.

  In the semiconductor light emitting device according to the present invention, the semiconductor light emitting element chip is placed on the second resin film, and the height of the surface of the semiconductor light emitting element chip is lower than the height of the surface of the first resin film. It is characterized by.

  With this configuration, it is possible to reliably and efficiently reflect the light from the semiconductor light emitting element in the forward direction.

  In the semiconductor light emitting device according to the present invention, a resin sealing portion formed of a translucent resin filled in the chip arrangement region and having a surface flush with the surface of the first resin film; 1 resin film and the optical thin film layer which coat | covers the said resin sealing part, It is characterized by the above-mentioned.

  With this configuration, the luminance on the surface can be made uniform, and a semiconductor light emitting device with improved display quality can be obtained.

  In the semiconductor light emitting device according to the present invention, a through-hole formed in the outer peripheral region and penetrating the insulating substrate, and filled in the through-hole and bonded to the first resin film are dispersed with the rutile titanium oxide fine particles. And a third resin film which is formed by laminating rutile titanium oxide fine particles formed by laminating on the back surface of the insulating substrate bonded to the filled resin portion. .

  With this configuration, it is possible to configure a heat dissipation path through the first resin film, the filling resin portion, and the third resin film, and heat from the semiconductor light emitting element chip is efficiently radiated to the back surface side, thereby improving the light emission efficiency. In addition, heat dissipation and reliability can be improved.

  The semiconductor light emitting device according to the present invention includes a heat sink in contact with the third resin film.

  With this configuration, it is possible to efficiently dissipate heat from the semiconductor light emitting element chip, and to improve light emission efficiency, heat dissipation, and reliability.

  In the semiconductor light emitting device according to the present invention, the first resin film has a visible light reflectance of 90% or more in a vertical direction of the insulating substrate.

  With this configuration, the light from the semiconductor light emitting element chip can be reliably reflected forward (in the direction perpendicular to the surface of the insulating substrate), so that the luminance and the light extraction rate can be reliably improved.

  In the semiconductor light emitting device according to the present invention, the first resin film has a thickness of 60 μm or more.

  With this configuration, it is possible to improve the visible light reflectance and reliably reflect the light from the semiconductor light emitting element chip, and thus it is possible to reliably improve the luminance and the light extraction rate.

  In the semiconductor light-emitting device according to the present invention, the first resin film is formed by applying a rutile-type titanium oxide fine particle-dispersed paste and then thermally curing it.

  With this configuration, the first resin film can be easily and reliably formed.

  In the semiconductor light emitting device according to the present invention, the second resin film has a visible light reflectance of 90% or more in a vertical direction of the insulating substrate.

  With this configuration, it is possible to reliably reflect light from the semiconductor light emitting element chip forward (perpendicular to the surface of the insulating substrate), so that the luminance and the light extraction rate can be reliably improved.

  In the semiconductor light emitting device according to the present invention, the second resin film has a thickness of 60 μm or more.

  With this configuration, it is possible to improve the visible light reflectance and reliably reflect the light from the semiconductor light emitting element chip, and thus it is possible to reliably improve the luminance and the light extraction rate.

  In the semiconductor light-emitting device according to the present invention, the second resin film is formed by applying a rutile-type titanium oxide fine particle-dispersed paste and then thermally curing it.

  With this configuration, the second resin film can be easily and reliably formed.

  In the semiconductor light emitting device according to the present invention, the filling resin portion and the third resin film are formed by applying a rutile-type titanium oxide fine particle dispersed paste and then thermosetting.

  With this configuration, the filled resin portion and the third resin film can be formed easily and reliably.

  In the semiconductor light emitting device according to the present invention, the rutile-type titanium oxide fine particle-dispersed paste includes a polymer as a solute in which the rutile-type titanium oxide fine particles are dispersed and a polymer dissolving agent as a solvent.

  With this configuration, the first resin film, the second resin film, the filling resin portion, and the third resin film can be easily and accurately formed.

  A light emitting chip mounting wiring board according to the present invention is a light emitting chip mounting wiring board including an insulating substrate on which a semiconductor light emitting element chip is mounted, and a chip arrangement region in which the semiconductor light emitting element chip is disposed; An outer peripheral region surrounding the chip placement region is provided on the surface of the insulating substrate, and the first resin film is formed by laminating rutile-type titanium oxide fine particles formed by being laminated on the outer peripheral region. .

  With this configuration, it is possible to reliably reflect light emitted from the mounted semiconductor light emitting element chip in the forward direction on the surface of the first resin film (surface of the light emitting chip mounting wiring board). As a result, it is possible to obtain a light emitting chip mounting wiring board capable of improving the substantial luminance and light extraction efficiency of the entire semiconductor light emitting device.

  The semiconductor light-emitting device according to the present invention is a semiconductor light-emitting device including an insulating substrate on which a semiconductor light-emitting element chip is placed, and surrounds the chip placement area where the semiconductor light-emitting element chip is placed and the chip placement area Since the outer peripheral region is provided on the surface of the insulating substrate, and the first resin film is formed by laminating the outer peripheral region and containing the rutile-type titanium oxide fine particles dispersed therein, the light emitted from the semiconductor light emitting element chip can be obtained. Since the light can be reliably reflected in the forward direction on the surface of the first resin film (the surface side of the light emitting chip mounting wiring board), the reflection efficiency is improved, and the substantial luminance and the entire semiconductor light emitting device can be improved. There is an effect that the light extraction efficiency can be improved.

  According to the light emitting chip mounting wiring substrate according to the present invention, the light emitting chip mounting wiring substrate includes an insulating substrate on which the semiconductor light emitting element chip is mounted, and a chip arrangement region in which the semiconductor light emitting element chip is disposed; Since the semiconductor substrate is provided with a first resin film which is provided on the surface of the insulating substrate with an outer peripheral region surrounding the chip arrangement region, and is formed by laminating the outer peripheral region and containing the dispersed rutile titanium oxide fine particles. The light emitted from the light emitting element chip can be reliably reflected in the forward direction on the surface of the first resin film (the surface side of the light emitting chip mounting wiring board), so that the reflection efficiency is improved and the semiconductor light emission The light emitting chip mounting wiring board capable of improving the substantial luminance and light extraction efficiency of the entire device can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing which shows the structure of the semiconductor light-emitting device which concerns on Embodiment 1 of this invention, and the wiring board for light emitting chip mounting, (A) is an end elevation of the cross section by arrow AA of (B), (B ) Is a plan view. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device which concerns on Embodiment 1 of this invention, and the wiring board for light emitting chip mounting, and is the end elevation of the cross section which shows the state which prepared the insulating board | substrate. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device and light emitting chip mounting wiring board which concern on Embodiment 1 of this invention, and is the end elevation of the cross section which shows the state which formed the 1st resin film. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device and light emitting chip mounting wiring board which concern on Embodiment 1 of this invention, and is an end elevation of the cross section which shows the state which has arrange | positioned and connected the semiconductor light-emitting device chip | tip. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device and light emitting chip mounting wiring board which concern on Embodiment 1 of this invention, and is the end elevation of the cross section which shows the state in which the resin sealing part was formed. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device and light emitting chip mounting wiring board which concern on Embodiment 1 of this invention, and is an end elevation of the cross section which shows the state in which the optical thin film layer was formed. It is an end elevation of a section showing a modification of a semiconductor light emitting device concerning Embodiment 1 of the present invention. It is an end elevation of the section showing the composition of the semiconductor light emitting device and light emitting chip mounting wiring board concerning Embodiment 2 of the present invention. It is an end elevation of a section showing a modification of a semiconductor light emitting device concerning Embodiment 2 of the present invention. It is an end view of the cross section which shows the structure of the semiconductor light-emitting device which concerns on Embodiment 3 of this invention, and the wiring board for light emitting chip mounting. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device which concerns on Embodiment 3 of this invention, and the wiring board for light emitting chip mounting, and is an end elevation of the cross section which shows the state which formed the through-hole in the insulating substrate. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device and light-emitting chip mounting wiring board concerning Embodiment 3 of this invention, and is an end elevation of the cross section which shows the state which formed the 1st resin film. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device and light emitting chip mounting wiring board which concern on Embodiment 3 of this invention, and is an end elevation of the cross section which shows the state which formed the filling resin part and the 3rd resin film. . It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device which concerns on Embodiment 3 of this invention, and the wiring board for light-emitting chip mounting, and is an end elevation of the cross section which shows the state which has arrange | positioned and connected the semiconductor light-emitting element chip. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device which concerns on Embodiment 3 of this invention, and the wiring board for light emitting chip mounting, and is an end elevation of the cross section which shows the state in which the resin sealing part was formed. It is process explanatory drawing which shows the manufacturing process of the semiconductor light-emitting device and light emitting chip mounting wiring board which concern on Embodiment 3 of this invention, and is an end elevation of the cross section which shows the state in which the optical thin film layer was formed. It is an end elevation of a section showing a modification of a semiconductor light emitting device concerning Embodiment 3 of the present invention. It is an end elevation of the section which shows the composition of the semiconductor light emitting device concerning Embodiment 4 of the present invention, and the wiring board for light emitting chip loading. It is an end elevation of a section showing a modification of a semiconductor light emitting device concerning Embodiment 4 of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Embodiment 1>
A semiconductor light emitting device and a light emitting chip mounting wiring board according to the present embodiment will be described with reference to FIGS. 2A to 2E, a manufacturing process (manufacturing method) of the semiconductor light emitting device and the light emitting chip mounting wiring board will be described. FIG. 3 illustrates a modification.

  FIG. 1 is an explanatory view showing a configuration of a semiconductor light emitting device and a light emitting chip mounting wiring board according to Embodiment 1 of the present invention, and (A) is an end face of a cross section taken along arrows AA in (B). FIG. 4B is a plan view.

A semiconductor light emitting device 1 according to the present embodiment includes an insulating substrate 10 on which a semiconductor light emitting element chip 2 is placed, and surrounds a chip placement area Ac on which the semiconductor light emitting element chip 2 is placed, and the chip placement area Ac. The outer peripheral region Af is provided on the surface 10 s of the insulating substrate 10, and the first resin film 21 that is formed by laminating the outer peripheral region Af and contains rutile-type titanium oxide fine particles is provided.

  Therefore, the light emitted from the semiconductor light-emitting element chip 2 can be reliably reflected in the forward direction on the surface of the first resin film 21 (the surface 10s side of the light-emitting chip mounting wiring board 1pb). Thus, the substantial luminance and light extraction efficiency of the semiconductor light emitting device 1 as a whole can be improved.

  The insulating substrate 10 is provided with electrode connection terminals 11 to which the electrodes of the semiconductor light emitting element chip 2 are connected via connection wires 11 w. The electrode connection terminals 11 are connected to the external terminals 12 via the wiring patterns 13. It is connected. Therefore, by supplying electric power (current) from the outside to the external terminal 12, current can be supplied to the semiconductor light emitting element chip 2 to emit light.

  The surface height Hc (height from the surface 10s) of the semiconductor light emitting element chip 2 is lower than the surface height Hf (height from the surface 10s) of the first resin film 21. Therefore, the light from the semiconductor light emitting element chip 2 can be reliably and efficiently reflected in the forward direction.

  The first resin film 21 has a visible light reflectance of 90% or more in the vertical direction of the insulating substrate 10. Therefore, the light from the semiconductor light emitting element chip 2 can be reliably reflected forward (perpendicular to the surface 10s of the insulating substrate 10), so that the luminance and the light extraction rate can be reliably improved. The visible light reflectance is preferably 95% or more. Further, the visible light wavelength region when the visible light reflectance is measured is from 450 nm to 650 nm.

  The first resin film 21 has a thickness of 60 μm or more. Therefore, the visible light reflectance can be improved and the light from the semiconductor light emitting element chip 2 can be reliably reflected, so that the luminance and the light extraction rate can be reliably improved.

  The first resin film 21 is formed by thermosetting a rutile type titanium oxide fine particle dispersed paste. Therefore, the first resin film 21 can be formed easily and reliably. In addition, the lamination | stacking and formation method of the 1st resin film 21 are demonstrated in detail with FIG. 2B.

  The semiconductor light emitting device 1 includes a resin sealing portion 25 having a surface formed of a translucent resin filled in the chip arrangement region Ac and having a surface flush with the surface of the first resin film 21, and a first resin film 21 and an optical thin film layer 31 that covers the resin sealing portion 25. Therefore, the luminance on the surface can be made uniform, and the semiconductor light emitting device 1 with improved display quality can be obtained.

  The light-emitting chip mounting wiring board 1pb according to the present embodiment includes an insulating substrate 10 on which the semiconductor light-emitting element chip 2 is placed, and a chip placement area Ac on which the semiconductor light-emitting element chip 2 is placed, and a chip An outer peripheral region Af surrounding the arrangement region Ac is provided on the surface 10s of the insulating substrate 10, and a first resin film 21 is formed which is formed by laminating the outer peripheral region Af and contains rutile titanium oxide fine particles dispersed therein.

  Therefore, the light emitted from the mounted semiconductor light emitting element chip 2 can be reliably reflected in the forward direction on the surface of the first resin film 21 (the surface 10s side of the light emitting chip mounting wiring board 1pb). Thus, it is possible to obtain a light emitting chip mounting wiring substrate 1pb that can improve the reflection efficiency and improve the substantial luminance and light extraction efficiency of the semiconductor light emitting device 1 as a whole.

  FIG. 2A is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the first embodiment of the present invention, and is an end view of a cross section showing a state in which an insulating substrate is prepared.

First, the insulating substrate 10 is prepared. The insulating substrate 10 includes electrode connection terminals 11, external terminals 12, and wiring patterns 13 (not shown in FIGS. 2A to 2E). The insulating substrate 10 is made of, for example, a glass epoxy substrate. The electrode connection terminal 11 and the external terminal 12 are formed by attaching a copper foil and appropriately patterning it. The glass epoxy substrate contains an appropriate pigment, but any of green, black, and white can be applied.

  FIG. 2B is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to Embodiment 1 of the present invention, and is an end view of a cross section showing a state in which the first resin film is formed. .

  The first resin film 21 is formed in the outer peripheral area Af. The first resin film 21 is formed by applying a rutile-type titanium oxide fine particle dispersed paste and then thermally curing it. Therefore, the first resin film 21 can be formed easily and reliably. Before the first resin film 21 is formed, the surface of the insulating substrate 10 is subjected to appropriate surface treatment (roughening treatment, cleaning treatment) to improve the adhesion of the rutile-type titanium oxide fine particle dispersed paste to the surface 10s. Keep improving.

  As a method for applying the rutile-type titanium oxide fine particle-dispersed paste, for example, a screen printing technique can be applied. In addition, it is possible to form a film by placing a plate frame having a thickness corresponding to the film thickness to be formed in the chip arrangement area Ac as a mask and filling the inside of the window portion of the plate frame with a rutile type titanium oxide fine particle dispersion paste. It is.

  After applying the paste, for example, the first resin film 21 can be formed by drying for about 10 minutes at a temperature of less than 100 ° C., and further performing heat treatment at 150 ° C. for about 1 hour in an oven for thermosetting. .

  The rutile-type titanium oxide fine particle-dispersed paste contains a polymer as a solute in which rutile-type titanium oxide fine particles are dispersed and a polymer dissolving agent as a solvent. Therefore, the first resin film 21 can be easily and accurately formed.

  The rutile-type titanium oxide fine particle dispersed paste can be composed of, for example, the following components. In the case of the photo-curing type, it is difficult to increase the film thickness because of poor light transmission (strong reflection), and therefore it is preferable to use a heat polymerization type (thermo-curing type).

  That is, as the solute, rutile type titanium oxide fine particles and polymers (for example, acrylic, olefin, silicon-based polymer having little visible light absorption, etc. can be applied, and rutile type titanium oxide fine particles can be dispersed. And a paste containing a mixed solvent that is appropriately adjusted so as to obtain a dry coating film having good uniformity as a polymer solubilizing agent that contains a compound having an epoxy group for polymer crosslinking and serves as a solvent. Apply.

  The rutile-type titanium oxide fine particle dispersion paste can be mixed with a fine particle dispersion material, a resin antioxidant, a resin deterioration inhibitor, a thermal polymerization initiator, an antistatic agent, and the like, if necessary.

  The first resin film 21 has a thickness of 60 μm or more. Therefore, the visible light reflectance can be improved and the light from the semiconductor light emitting element chip 2 can be reliably reflected, so that the luminance and the light extraction rate can be reliably improved.

  As a result of examining the relationship between the thickness of the first resin film 21 and the visible light reflectance (wavelength region = 450 nm to 650 nm), the visible light reflectance is approximately 90% at a thickness of 25 μm, and visible at a thickness of 40 μm. When the light reflectance was approximately 90% to 95% and the thickness was 60 μm, the visible light reflectance was approximately 95%.

  Therefore, when the variation in thickness at the time of film formation is taken into consideration, by setting the thickness of the first resin film 21 to 60 μm or more, a visible light reflectance of 90% (more preferably 95%) or more is reliably achieved. It is possible.

  In order to form the first resin film 21 easily and accurately, it is possible to obtain a desired film thickness by repeatedly applying the rutile-type titanium oxide fine particle dispersed paste a plurality of times. By applying a rutile type titanium oxide fine particle dispersion paste, a high visible light reflectance of 90% (preferably 95%) is achieved with a relatively thin film (thickness of 60 μm or more) which is difficult with a conventional solder resist or the like. It became possible to realize.

  FIG. 2C is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to Embodiment 1 of the present invention, and is an end face of a cross section showing a state in which the semiconductor light emitting element chips are arranged and connected FIG.

The semiconductor light emitting element chip 2 is mounted (die bonding) on the chip arrangement area Ac. By inserting an appropriate adhesive member, it can be easily adhered. As the adhesive member, it is possible to apply a conductive adhesive such as a silver paste or a conductive adhesive tape.

  After placing the semiconductor light emitting element chip 2, the electrode of the semiconductor light emitting element chip 2 is connected to the electrode connection terminal 11 via the connection wire 11 w.

  Note that the surface height Hc of the semiconductor light emitting element chip 2 is lower than the surface height Hf of the first resin film 21. That is, the height Hf of the surface of the first resin film 21 (the film thickness of the first resin film 21) is previously formed thicker than the chip thickness of the semiconductor light emitting element chip 2. Therefore, the light from the semiconductor light emitting element chip 2 is not emitted in the lateral direction, and the light from the semiconductor light emitting element chip 2 can be reliably and efficiently reflected in the forward direction.

  FIG. 2D is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the first embodiment of the present invention, and is an end view of a cross section showing a state in which a resin sealing portion is formed. .

  The chip placement region Ac surrounded by the first resin film 21 is filled with a translucent resin to form a resin sealing portion 25 having a surface flush with the surface of the first resin film 21. A normal translucent resin can be applied.

  As the translucent resin, for example, an epoxy resin, a silicone resin, or the like can be applied. In order to make the first resin film 21 and the resin sealing portion 25 flush with each other, the surface can be somewhat polished.

  Note that it is possible to eliminate the heating step by applying a UV curable resin that is cured by UV (ultraviolet) irradiation instead of a thermosetting epoxy resin or silicone resin.

  FIG. 2E is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the first embodiment of the present invention, and is an end view of a cross section showing a state in which an optical thin film layer is formed.

  An optical thin film layer 31 is formed on the surfaces of the first resin film 21 and the resin sealing portion 25. The optical thin film layer 31 is formed of, for example, a hard coat layer, an antireflection layer, and an antifouling coat layer for the purpose of improving light radiation and preventing scratches on the surface. The coating can be formed by an appropriate wet method.

  FIG. 3 is an end view of a cross section showing a modification of the semiconductor light emitting device according to the first embodiment of the present invention.

  In the semiconductor light emitting device 1 according to this modification, a lens portion 32 is disposed between the first resin film 21 and the resin sealing portion 25 and the optical thin film layer 33. The lens part 32 can be formed, for example, by placing hemispherical glass previously formed in a lens shape and pre-coated with the optical thin film layer 33 on the first resin film 21 and the resin sealing part 25. .

<Embodiment 2>
The semiconductor light emitting device and the light emitting chip mounting wiring board according to the present embodiment will be described with reference to FIGS. FIG. 5 illustrates a modification.

  The basic configuration is the same as that of the semiconductor light-emitting device 1 and the light-emitting chip mounting wiring board 1pb of the first embodiment, and therefore, different items are mainly described with reference to symbols.

  FIG. 4 is an end view in cross section showing the configuration of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the second embodiment of the present invention.

  A semiconductor light emitting device 1 according to the present embodiment includes an insulating substrate 10 on which a semiconductor light emitting element chip 2 is placed. A chip placement area Ac on which the semiconductor light emitting element chip 2 is placed, and a chip placement area Ac. Is formed on the surface 10 s of the insulating substrate 10, and is formed in the chip placement region Ac, and the first resin film 21 formed by being laminated on the outer periphery region Af and containing the dispersed rutile titanium oxide fine particles. And a second resin film 22 containing dispersed rutile titanium oxide fine particles. Therefore, the light radiated to the back surface side of the semiconductor light emitting element chip 2 can be effectively reflected forward by the surface of the second resin film 22 to further improve the luminance and light extraction efficiency.

  In addition, the 1st resin film 21 and the 2nd resin film 22 can be similarly formed with the same raw material. Accordingly, the first resin film 21f is applied and formed as the first layer of the second resin film 22 and the first resin film 21 in the first stage, and the remaining portion of the first resin film 21 is applied in the second stage. Can be formed. It is also possible to form the first resin film 21 and the second resin film 22 individually.

  The semiconductor light emitting element chip 2 is placed on the second resin film 22, and the surface height Hc of the semiconductor light emitting element chip 2 is lower than the surface height Hf of the first resin film 21. Therefore, the light from the semiconductor light emitting element chip 2 can be reliably and efficiently reflected in the forward direction. Since the second resin film 22 is cured to an appropriate hardness, the semiconductor light emitting element chip 2 can be easily and accurately placed on the surface of the second resin film 22 with an adhesive member interposed therebetween. Is possible. The same adhesive member as that in Embodiment 1 can be applied.

  The second resin film 22 has a visible light reflectance of 90% or more in the vertical direction of the insulating substrate 10. Therefore, the light from the semiconductor light emitting element chip 2 can be reliably reflected forward (perpendicular to the surface 10s of the insulating substrate 10), so that the luminance and the light extraction rate can be reliably improved.

  The second resin film 22 has a thickness of 60 μm or more. Therefore, the visible light reflectance can be improved and the light from the semiconductor light emitting element chip 2 can be reliably reflected, so that the luminance and the light extraction rate can be reliably improved.

  The second resin film 22 is formed by applying a rutile type titanium oxide fine particle dispersed paste and then thermally curing it. Therefore, the second resin film 22 can be formed easily and reliably.

  The light-emitting chip mounting wiring board 1pb according to the present embodiment includes an insulating substrate 10 on which the semiconductor light-emitting element chip 2 is placed, and a chip placement area Ac on which the semiconductor light-emitting element chip 2 is placed, and a chip An outer peripheral region Af surrounding the arrangement region Ac is provided on the surface 10s of the insulating substrate 10, and formed in the outer peripheral region Af and dispersed in the first resin film 21 containing the rutile-type titanium oxide fine particles and formed in the chip arrangement region Ac. And a second resin film 22 containing dispersed rutile titanium oxide fine particles.

  Therefore, the light emitted from the mounted semiconductor light emitting element chip 2 is reliably reflected forward by the surface of the first resin film 21 (the surface 10s side of the light emitting chip mounting wiring board 1pb), and the semiconductor light emitting element Light emitted to the back side of the chip can be effectively reflected on the surface of the second resin film 22 (surface 10s of the light emitting chip mounting wiring board 1pb), so that the reflection efficiency is improved and the semiconductor light emission The light emitting chip mounting wiring substrate 1pb can improve the substantial luminance and light extraction efficiency of the entire device 1.

  FIG. 5 is a sectional end view showing a modification of the semiconductor light emitting device according to the second embodiment of the present invention.

  The semiconductor light emitting device 1 according to this modification is the same as the case of FIG. 3 in that the lens unit 32 and the optical thin film layer 33 shown in FIG. .

<Embodiment 3>
The semiconductor light emitting device and the light emitting chip mounting wiring board according to the present embodiment will be described with reference to FIGS. 7A to 7F, a manufacturing process (manufacturing method) of the semiconductor light emitting device and the light emitting chip mounting wiring board will be described. In FIG. 8, a modified example will be described.

  The basic configuration is the same as that of the semiconductor light-emitting device 1 and the light-emitting chip mounting wiring board 1pb of the first embodiment, and therefore, different items are mainly described with reference to symbols.

  FIG. 6 is an end view of a cross section showing the configuration of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the third embodiment of the present invention.

A semiconductor light emitting device 1 according to the present embodiment includes an insulating substrate 10 on which a semiconductor light emitting element chip 2 is placed. A chip placement area Ac on which the semiconductor light emitting element chip 2 is placed, and a chip placement area Ac. The first resin film 21 is provided on the surface 10s of the insulating substrate 10 with the outer peripheral region Af surrounding the outer peripheral region A, and is formed by being laminated on the outer peripheral region Af and containing the dispersed rutile-type titanium oxide fine particles.
A through hole 15 formed in the outer peripheral region Af and penetrating the insulating substrate 10; and a filled resin portion 24 filled with the through hole 15 and bonded to the first resin film 21 and containing the dispersed rutile titanium oxide particles. And a third resin film 23 which is formed by being bonded to the filling resin portion 24 and laminated on the back surface 10r of the insulating substrate 10 and containing dispersed rutile titanium oxide fine particles.

  Therefore, a heat dissipation path can be configured through the first resin film 21, the filling resin portion 24, and the third resin film 23, and heat from the semiconductor light emitting element chip 2 can be efficiently dissipated to the back surface 10r side. , Luminous efficiency, heat dissipation, and reliability can be improved.

  The filled resin portion 24 and the third resin film 23 are formed by applying a rutile-type titanium oxide fine particle dispersed paste and then thermosetting. Therefore, the filled resin portion 24 and the third resin film 23 can be formed easily and reliably. The third resin film 23 and the filling resin portion 24 can be formed in the same manner as the first resin film 21.

  In addition, the semiconductor light emitting device 1 includes a resin sealing portion 25 that is formed of a translucent resin filled in the chip arrangement region Ac and has a surface that is flush with the surface of the first resin film 21; And an optical thin film layer 31 that covers the resin film 21 and the resin sealing portion 25.

  The light-emitting chip mounting wiring board 1pb according to the present embodiment includes an insulating substrate 10 on which the semiconductor light-emitting element chip 2 is placed, and a chip placement area Ac on which the semiconductor light-emitting element chip 2 is placed, and a chip An outer peripheral region Af surrounding the arrangement region Ac is provided on the surface 10s of the insulating substrate 10, and is formed in the outer peripheral region Af, a first resin film 21 formed in the outer peripheral region Af and containing dispersed rutile-type titanium oxide fine particles. Bonded to the through-hole 15 penetrating the insulating substrate 10, the filled resin portion 24 filled in the through-hole 15 and bonded to the first resin film 21 and containing dispersed rutile titanium oxide fine particles, and the filled resin portion 24 And a third resin film 23 which is formed by laminating on the back surface 10r of the insulating substrate 10 and containing dispersed rutile titanium oxide fine particles.

  Therefore, the light emitted from the mounted semiconductor light emitting element chip 2 is reliably reflected forward by the surface of the first resin film 21 (the surface 10s side of the light emitting chip mounting wiring board 1pb), and the semiconductor light emitting element chip Light emitted to the back side can be effectively reflected on the front surface, and a heat radiation path can be formed through the first resin film 21, the filling resin portion 24, and the third resin film 23. The light emitting chip mounting wiring board 1pb can improve the substantial luminance, light extraction efficiency, heat dissipation, and reliability of the entire device 1.

  In addition, the semiconductor light emitting device 1 according to the present embodiment includes a heat sink 36 in contact with the third resin film 23. Therefore, it is possible to efficiently dissipate heat from the semiconductor light emitting element chip 2 and improve the light emission efficiency, heat dissipation, and reliability. In addition, in order to improve the adhesiveness of the heat sink 36 with respect to the 3rd resin film 23, it is possible to insert the suitable heat conductive member 35. FIG.

  As the heat conductive member 35, a heat conductive paste, a heat conductive sheet, or the like can be applied.

  FIG. 7A is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the third embodiment of the present invention, and is an end view of a cross section showing a state where through holes are formed in the insulating substrate. It is.

  First, the insulating substrate 10 is prepared. The insulating substrate 10 is formed with a through hole 15 penetrating the substrate so as to correspond to the outer peripheral region Af.

  FIG. 7B is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the third embodiment of the present invention, and is an end view of a cross section showing a state in which the first resin film is formed. .

  First, the first resin film 21 is formed in the outer peripheral area Af.

  FIG. 7C is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the third embodiment of the present invention, and is a cross-sectional view showing a state in which the filling resin portion and the third resin film are formed. It is an end view.

The rutile type titanium oxide fine particle dispersed paste is applied (filled) to the through-holes 15 and then the rutile type titanium oxide fine particle dispersed paste is applied to the back surface 10r, thereby forming the filled resin portion 24 and the third resin film 23. It is also possible to generate the first resin film 21 and the filling resin portion 24 first and form the third resin film 23 later. Alternatively, the filling resin portion 24 can be generated first, and then the first resin film 21 and the third resin film 23 can be sequentially formed.

  FIG. 7D is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to Embodiment 3 of the present invention, and shows an end face of a cross section showing a state in which the semiconductor light emitting element chips are arranged and connected FIG.

  The semiconductor light emitting element chip 2 is mounted. As in the first and second embodiments, the surface height Hc of the semiconductor light emitting element chip 2 is lower than the surface height Hf of the first resin film 21.

  FIG. 7E is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the third embodiment of the present invention, and is an end view of a cross section showing a state where a resin sealing portion is formed. .

  A resin sealing portion 25 is formed. Since it is the same as the case of Embodiment 1 and Embodiment 2, detailed description is abbreviate | omitted.

  FIG. 7F is a process explanatory view showing the manufacturing process of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the third embodiment of the present invention, and is an end view of a cross section showing a state in which an optical thin film layer is formed.

  The optical thin film layer 31 is formed. Since it is the same as the case of Embodiment 1 and Embodiment 2, detailed description is abbreviate | omitted.

  After this step, the heat conducting member 35 and the heat sink 36 are attached to the third resin film 23 to complete the semiconductor light emitting device 1 (see FIG. 6).

  FIG. 8 is an end view of a cross section showing a modification of the semiconductor light emitting device according to Embodiment 3 of the present invention.

  The semiconductor light emitting device 1 according to this modification is the same as the case of FIG. 3 in that the lens unit 32 and the optical thin film layer 33 shown in FIG.

<Embodiment 4>
Based on FIG. 9 and FIG. 10, the semiconductor light emitting device and the light emitting chip mounting wiring board according to the present embodiment will be described. FIG. 10 illustrates a modification.

  The basic configuration is the same as that of the semiconductor light-emitting device 1 and the light-emitting chip mounting wiring board 1pb of the second and third embodiments, and therefore, different items will be mainly described with reference to symbols.

  FIG. 9 is an end view in cross section showing the configuration of the semiconductor light emitting device and the light emitting chip mounting wiring board according to the fourth embodiment of the present invention.

  The semiconductor light emitting device 1 according to the present embodiment, the semiconductor light emitting device 1 according to the second embodiment, and the semiconductor light emitting device 1 according to the third embodiment are combined. That is, the point having the second resin film 22 corresponds to the second embodiment, and the point having the filling resin portion 24 and the third resin film 23 corresponds to the third embodiment. Since each content is as described above, detailed description is omitted.

  That is, the semiconductor light emitting device 1 according to the present embodiment includes the insulating substrate 10 on which the semiconductor light emitting element chip 2 is placed, the chip placement region Ac on which the semiconductor light emitting element chip 2 is placed, and the chip placement. A first resin film 21 provided on the surface 10s of the insulating substrate 10 with an outer peripheral region Af surrounding the region Ac and laminated and formed on the outer peripheral region Af and containing rutile-type titanium oxide fine particles dispersed therein, and a chip arrangement region Ac The second resin film 22 containing the dispersed rutile-type titanium oxide fine particles, the through hole 15 formed in the outer peripheral region Af and penetrating the insulating substrate 10, and the first resin film filled in the through hole 15 21, a filled resin part 24 dispersed and containing rutile-type titanium oxide fine particles, and a rutile type laminated on the back surface 10 r of the insulating substrate 10 bonded to the filled resin part 24. Dispersing the titanium particles and a third resin film 23 containing it.

  In addition, the semiconductor light emitting device 1 includes a resin sealing portion 25 that is formed of a translucent resin filled in the chip arrangement region Ac and has a surface that is flush with the surface of the first resin film 21; And an optical thin film layer 31 that covers the resin film 21 and the resin sealing portion 25.

  The light emitting chip mounting wiring board 1pb according to the present embodiment includes an insulating substrate 10 on which the semiconductor light emitting element chip 2 is placed, and a chip placement area Ac on which the semiconductor light emitting element chip 2 is placed; A first resin film 21 that is provided on the surface 10s of the insulating substrate 10 with an outer peripheral area Af surrounding the chip arrangement area Ac, dispersed in and containing rutile-type titanium oxide fine particles, and the chip arrangement area Ac. The second resin film 22 containing the dispersed rutile-type titanium oxide fine particles, the through hole 15 formed in the outer peripheral region Af and penetrating the insulating substrate 10, and the first resin film filled in the through hole 15 21 filled with rutile-type titanium oxide fine particles dispersed therein, and laminated on the back surface 10r of the insulating substrate 10 bonded to the filled resin portion 24. Dispersed type titanium oxide fine particles and a third resin film 23 containing it.

  FIG. 10 is an end view of a cross section showing a modification of the semiconductor light emitting device according to Embodiment 4 of the present invention.

  The semiconductor light emitting device 1 according to this modification is the same as the case of FIG. 3 in that the lens unit 32 and the optical thin film layer 33 shown in FIG.

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 1pb Light-emitting chip mounting wiring board 2 Semiconductor light-emitting element chip 10 Insulating substrate 10s Front surface 10r Back surface 11 Electrode connection terminal 12 External terminal 15 Through-hole 21 First resin film 21f First resin film 22 Second resin film 23 Third resin film 24 Filled resin portion 25 Resin sealing portion 31 Optical thin film layer 32 Lens portion 33 Optical thin film layer 35 Heat conducting member 36 Heat sink Ac Chip placement region Af Outer peripheral region Hc Height of surface of semiconductor light emitting device chip Hf First Resin film surface height

Claims (16)

A semiconductor light emitting device comprising an insulating substrate on which a semiconductor light emitting element chip is placed,
Provided on the surface of the insulating substrate a chip arrangement region where the semiconductor light emitting element chip is arranged, and an outer peripheral region surrounding the chip arrangement region,
A semiconductor light emitting device comprising: a first resin film formed by laminating rutile titanium oxide fine particles, which is laminated on the outer peripheral region. The semiconductor light emitting device according to claim 1,
The semiconductor light emitting device, wherein a height of a surface of the semiconductor light emitting element chip is lower than a height of a surface of the first resin film. The semiconductor light emitting device according to claim 1,
A semiconductor light emitting device comprising: a second resin film formed by laminating rutile-type titanium oxide fine particles, which is laminated on the chip arrangement region. The semiconductor light emitting device according to claim 3,
The semiconductor light emitting device chip is mounted on the second resin film, and the height of the surface of the semiconductor light emitting device chip is lower than the height of the surface of the first resin film. The semiconductor light emitting device according to claim 1, wherein:
A resin sealing portion formed of a translucent resin filled in the chip placement region and having a surface flush with the surface of the first resin film; the first resin film; and the resin sealing portion An optical thin film layer for covering the semiconductor light emitting device. The semiconductor light emitting device according to claim 1, wherein
A through-hole formed in the outer peripheral region and penetrating the insulating substrate; a filled resin portion filled in the through-hole and joined to the first resin film and containing dispersed rutile titanium oxide fine particles; and the filling A semiconductor light emitting device comprising: a third resin film bonded to a resin portion and laminated on the back surface of the insulating substrate and containing dispersed rutile titanium oxide fine particles. The semiconductor light emitting device according to claim 6,
A semiconductor light emitting device comprising a heat sink in contact with the third resin film. A semiconductor light emitting device according to any one of claims 1 to 7,
The first resin film has a visible light reflectance in the vertical direction of the insulating substrate of 90% or more. The semiconductor light emitting device according to claim 8,
The semiconductor resin light-emitting device, wherein the first resin film has a thickness of 60 μm or more. The semiconductor light-emitting device according to claim 8 or 9, wherein
The first resin film is formed by applying a rutile-type titanium oxide fine particle dispersed paste and then thermally curing the first resin film. A semiconductor light emitting device according to any one of claims 3 to 10,
The semiconductor resin light emitting device, wherein the second resin film has a visible light reflectance of 90% or more in a vertical direction of the insulating substrate. The semiconductor light-emitting device according to claim 11,
The semiconductor resin light-emitting device, wherein the second resin film has a thickness of 60 μm or more. The semiconductor light-emitting device according to claim 11 or 12,
The second resin film is formed by applying a rutile-type titanium oxide fine particle-dispersed paste and then thermally curing the second resin film. The semiconductor light emitting device according to claim 6, wherein:
The filled resin portion and the third resin film are formed by applying a rutile-type titanium oxide fine particle-dispersed paste and then thermally curing the semiconductor light-emitting device. A semiconductor light-emitting device according to any one of claims 10, 13, and 14,
The rutile-type titanium oxide fine particle-dispersed paste contains a polymer as a solute in which rutile-type titanium oxide fine particles are dispersed and a polymer solvent as a solvent. A light emitting chip mounting wiring board comprising an insulating substrate on which a semiconductor light emitting element chip is placed,
Provided on the surface of the insulating substrate a chip arrangement area where the semiconductor light emitting element chip is arranged, and an outer peripheral area surrounding the chip arrangement area,
A wiring board for mounting a light-emitting chip, comprising: a first resin film formed by laminating rutile titanium oxide fine particles, which is laminated on the outer peripheral region.

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