JP2007273763A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can prevent a hardened resin from being peeled off from a semiconductor element. <P>SOLUTION: A semiconductor light emitting element 10 and cap member 80 are mounted on a base 210 of an oven 200, and connecting terminals 211, 211 are contacted with terminals 22, 22 under which condition the semiconductor light emitting element 10 can be turned ON. Next, a mixture solution 70B is injected from a resin injector into openings 81 of the cap member 80, the mixture solution 70B is filled in a gap between the semiconductor light emitting element 10 and the cap member 80, a voltage is applied from a power source 300 to a light emitter 40 to emit light L1 from the light emitter 40 and to heat the light emitter 40, and simultaneously a voltage is applied from the light source 300 to a heater 220 to heat the heater 220. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device including a sealing portion formed of a curable resin and a manufacturing method thereof.

  A semiconductor light emitting device such as a light emitting diode (LED) can take various configurations depending on its application. For example, as shown in FIG. 14, a semiconductor light emitting device having a semiconductor chip 130 on a lead frame 120. Some devices include an element 110, a sealing portion 170 provided on the semiconductor light emitting device 110, and a cap portion 180 provided on the sealing portion 170.

  Here, the lead frame 120 includes a slag portion 121 that dissipates heat of the semiconductor chip 130, terminal portions 122 and 122 for electrically connecting the electrodes of the semiconductor chip 130 and other electronic components, and the slag portion. 121 includes an adhesive layer 123 for fixing the semiconductor chip 130 to the frame 121, and a slag portion 121, terminal portions 122 and 122, and a frame portion 124 that holds the cap portion 180. The semiconductor chip 130 is obtained by providing a light emitting section 140 on a submount substrate 150 as shown in an enlarged view in FIG. The light emitting unit 140 is configured by stacking an n-type semiconductor layer 142, an active layer 143 having a light emitting region (not shown), and a p-type semiconductor layer 144 in this order on a substrate 141. A mesa portion 145 is formed by selectively etching from the 144 side to a part of the n-type semiconductor layer 142. A p-side electrode 146 and an n-side electrode 147 are formed on the surface opposite to the substrate 141, respectively. The p-side electrode 146 is formed on the surface of the p-type semiconductor layer 144, and the n-side electrode 147 is formed on the exposed surface of the n-type semiconductor layer 142. The submount substrate 150 includes an insulating layer 151 and lead electrodes 152 and 152. In addition, the p-side electrode 146 and the n-side electrode 147 and the extraction electrodes 152 and 152 are electrically connected by bumps 153 and 153. The terminal portion 122 of the lead frame 120 and the extraction electrodes 152 and 153 of the submount substrate 150 are electrically connected to each other by wires 160 and 160. The sealing portion 170 has a hemispherical shape corresponding to the semiconductor chip 130, and the cap portion 180 has openings 181 and 181 at portions that are in contact with portions other than the hemispherical shape of the sealing portion 170. Yes.

  This semiconductor light emitting device is applied to, for example, a lighting device, and the sealing unit 170 not only protects the semiconductor chip 130 from the external environment but also serves as a lens. In the technical field of spectacle lenses, for example, the materials described in Patent Document 1 or Patent Document 2 are used as materials for spectacle lenses.

JP-A-2005-338109 JP 2005-345484 A

  By the way, the external quantum efficiency of the semiconductor light emitting device is composed of two elements of an internal quantum efficiency and a light extraction efficiency. By improving these efficiency, a semiconductor light emitting element having a long life, low power consumption, and high output. Can be realized. Here, the former internal quantum efficiency is, for example, a layer in which growth conditions can be accurately controlled and contact resistance can be suppressed so that a high-quality crystal with few crystal defects, dislocations, and impurity levels can be obtained. The structure is improved. On the other hand, the latter light extraction efficiency is such that, for example, before the light emitted from the active layer 143 is absorbed by the active layer 143 or the like in the semiconductor light emitting device 110, the interface between the semiconductor light emitting device 110 and the sealing portion 170 is obtained. This can be improved by adopting a geometric shape or a layer structure in which the incidence rate is increased below the critical angle. In addition, this can be improved by reducing the refractive index difference at the interface between the semiconductor light emitting device 110 and the sealing portion 170 and increasing the critical angle at the interface. Note that when only the “critical angle” is expressed in this specification, the criticality at the interface between the semiconductor light emitting device 110 and the sealing portion 170 when light travels from the semiconductor light emitting device 110 side to the sealing portion 170 side. Point to the corner.

  As described above, various measures for improving the internal quantum efficiency and the light extraction efficiency are conceivable. Of these, the latter improvement of the light extraction efficiency will be considered. Conventionally, an epoxy resin, a silicon resin, or the like is mainly used as a material for the sealing portion 170. However, since these resins have a refractive index of only about 1.5, the substrate 141 is made of a material having a refractive index higher than 1.5, for example, sapphire having a refractive index of about 1.7 to 1.8. Therefore, the difference in refractive index at the interface between the substrate 141 and the sealing portion 170 becomes large. For this reason, the critical angle at the interface is reduced, so that when light travels from the semiconductor chip 130 side to the sealing portion 170 side, the ratio of total reflection or Fresnel reflection at the interface increases. As a result, most of the reflected light is absorbed by the active layer 143 and the like in the semiconductor chip 130, so that it is not easy to improve the light extraction efficiency with conventional materials.

  Therefore, as the material of the sealing portion 170, for example, a curable resin 170B (refractive index n2 = 1.6 or more and 1.8 or less) having a high refractive index as described in Patent Document 1 or Patent Document 2 is used. It is possible to use it. Since this curable resin 170B is (1) excellent in heat resistance and can be used in an environment greatly exceeding 100 ° C., it is suitable as a sealant for exothermic devices such as semiconductor light emitting devices, (2) Generally, it has excellent adhesion as compared with conventional resins, and (3) it has three advantages that it is not plastic but curable.

  However, the curable resin 170B has a property of being shrink-cured by heating or light irradiation. Therefore, for example, as shown in FIG. 16, after placing the semiconductor light emitting device on which the sealing portion 170 is not yet formed on the base 210 of the oven 200, the curable resin 170 </ b> B is removed from the resin injector 230 with the cap portion. By flowing into the injection port 151 of 180, and subsequently supplying power from the power source 300 to drive the heater 230 of the oven 200, thereby heating and curing the curable resin 170B to form the sealing portion 170. When the semiconductor light emitting device is manufactured, a gap may be generated between the semiconductor light emitting element 110 and the sealing portion 170. That is, there is a problem that the curable resin 170B is peeled off from the surface of the semiconductor light emitting device 110 in the process of curing the curable resin 170B.

  As described above, when the curable resin 170B is peeled off from the surface of the semiconductor light emitting device 110, the critical angle is defined based on the refractive index difference at the interface between the semiconductor light emitting device 110 and the gap having the refractive index of 1. In this case, the ratio of total reflection or Fresnel reflection is further increased as compared with the conventional case, and the light extraction efficiency is drastically reduced.

  Further, such a peeling problem can occur not only in the technical field of the semiconductor light emitting device described above but also in the technical field of sealing a semiconductor element using a curable resin.

  Incidentally, some of the curable resins described above contain sulfur. Sulfur is generally known as an element having high reactivity with metals. Therefore, it is curable for semiconductor elements that have components made of metal, such as electrodes, terminals connected to electrodes, and terminals for electrical connection with other electronic components. If the resin is kept in contact, sulfur contained in the curable resin reacts with the metal portion of the semiconductor element. As a result, there is a problem that the semiconductor element is deteriorated or damaged.

  The present invention has been made in view of such problems, and a first object thereof is to provide a method for manufacturing a semiconductor device in which a curable resin does not peel from a semiconductor element. A second object of the present invention is to provide a method for manufacturing a semiconductor device in which the semiconductor element is hardly deteriorated or damaged by sulfur contained in the curable resin, and a semiconductor device manufactured by the manufacturing method. .

The first method for manufacturing a semiconductor device of the present invention performs the following two steps.
(A1) Step of immersing at least a part of the surface of the semiconductor element in the curable resin (A2) Step of applying a voltage to the semiconductor element and curing the curable resin by heat generated from the semiconductor element

  In the first method for manufacturing a semiconductor device of the present invention, a voltage is applied to the semiconductor element, and the curable resin is cured using heat generated from the semiconductor element. Thereby, hardening starts from the side which contacts the surface of a semiconductor element among curable resins.

The second semiconductor device manufacturing method of the present invention performs the following three steps.
(B1) A step of preliminarily polymerizing a curable resin containing sulfur (B2) A step of immersing a surface including at least a metal portion in a curable resin subjected to a polymerization reaction in a semiconductor element having an exposed metal portion ( B3) A step of curing the curable resin subjected to the polymerization reaction while the surface is immersed

  In the second method for producing a semiconductor device of the present invention, the polymerization reaction of the curable resin is allowed to proceed in advance before bringing the curable resin into contact with the surface including at least the metal portion of the semiconductor element. As a result, sulfur contained in the curable resin is molecularly bonded to other elements by a polymerization reaction, and the reactivity with the metal portion of sulfur is significantly reduced.

  According to the first method of manufacturing a semiconductor device of the present invention, the voltage is applied to the semiconductor element so that the curing starts from the side of the curable resin that contacts the surface of the semiconductor element. There is no possibility that the curable resin is peeled off from the surface of the semiconductor element by the curing.

  According to the second method for manufacturing a semiconductor device of the present invention, the polymerization reaction of the curable resin is advanced in advance, and the curable resin is brought into contact with the surface including at least the metal portion of the semiconductor element. Therefore, the reactivity with the metal part of sulfur is suppressed. Thereby, the curing of the curable resin can be completed before the metal portion of the semiconductor element is deteriorated or damaged. Therefore, even if sulfur is contained in the curable resin, there is no possibility that the metal portion of the semiconductor element will be deteriorated or damaged. In addition, by using this manufacturing method, even if sulfur is contained in the curable resin, there is no possibility that the metal portion of the semiconductor element is deteriorated or damaged, so that a highly reliable semiconductor device is realized. Can do.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 shows a cross-sectional structure of a light-emitting diode 1 (semiconductor device) according to an embodiment of the present invention. The light emitting diode 1 includes a semiconductor light emitting element 10 having a semiconductor chip 30 on a lead frame 20, a sealing portion 70 provided on the semiconductor light emitting element 10 (semiconductor element), and the sealing portion 70. The cap part 80 is provided. FIG. 2 shows an enlarged cross-sectional configuration of the semiconductor light emitting device 10. 1 and 2 are schematically shown and are different from actual dimensions and shapes.

  The lead frame 20 has a slag portion 21 at the center thereof, terminal portions 22 and 22 at the peripheral portion of the slag portion 21, and an adhesive layer 23 on the slag portion 21. The lead frame 20 also has a frame portion 24 on the peripheral portion of the slag portion 21 and part of the upper surface and the lower surface of the terminal portions 22 and 22. Here, the slag part 21 is for radiating the heat from the semiconductor chip 30 and is made of, for example, a heat sink. The terminal portions 22 and 22 are for electrically connecting a p-side electrode 46 and an n-side electrode 67 (described later) of the semiconductor chip 30 to other electronic components and the like, for example, flat gold (Au) Consists of. The adhesive layer 23 is for fixing the semiconductor chip 30 to the slag portion 21 and is made of, for example, an epoxy-based adhesive containing silver. The frame part 24 is for holding the slag part 21, the terminal parts 22, 22 and the cap part 80, and is made of, for example, an insulating material.

  The semiconductor chip 30 is obtained by providing a light emitting unit 40 on a submount substrate 50 as shown in an enlarged manner in FIG.

  The light emitting unit 40 is configured by laminating an n-type semiconductor layer 42, an active layer 43 having a light-emitting region, and a p-type semiconductor layer 44 in this order on a substrate 41, and the n-type from the p-type semiconductor layer 44 side. A mesa portion 45 is formed by selectively etching up to a part of the semiconductor layer 42. A p-side electrode 46 and an n-side electrode 47 are formed on the surface opposite to the substrate 41, respectively. The p-side electrode 46 is formed on the surface of the p-type semiconductor layer 44, and the n-side electrode 47 is formed on the exposed surface of the n-type semiconductor layer 42. Here, the substrate 41 is provided on the side opposite to the submount substrate 50, and is made of a material capable of transmitting light from the light emitting region, for example, sapphire. That is, the light emitting unit 40 is a top emission type light emitting element capable of outputting light from the light emitting region from the substrate 41 side (upper surface side). The n-type semiconductor layer 42, the active layer 43, and the p-type semiconductor layer 44 are made of, for example, a GaN-based or InGaN-based semiconductor material. The p-side electrode 46 is composed of a highly reflective film, for example, a multilayer film in which titanium (Ti), platinum (Pt), and Au are laminated in this order, and is electrically connected to the p-type semiconductor layer 44. The n-side electrode 47 is made of, for example, a multilayer film in which an alloy of Au and germanium (Ge), Ni and Au are laminated in this order, and is electrically connected to the n-type semiconductor layer 42.

  The submount substrate 50 has an insulating layer 51 and lead electrodes 52 and 52, and the lead electrodes 52 and 52, the p-side electrode 46 and the n-side electrode 47 are electrically connected via bumps 53 and 53. It is connected to the. Here, the insulating layer 51 is made of, for example, silicon or metal nitride, and the extraction electrodes 52, 52 are made of a highly reflective metal material, for example, gold (Au), copper (Cu), nickel (Ni), or the like. Become. The terminal portion 22 of the lead frame 20 and the extraction electrodes 52 and 53 of the submount substrate 50 are electrically connected to each other by wires 60 and 60 (FIG. 1). The bump 53 is made of, for example, a metal material capable of bonding the p-side electrode 46 and the n-side electrode 47 and the extraction electrodes 52 and 52 to each other by electrical bonding or the like, for example, Au solder.

  The sealing part 70 is provided on the semiconductor chip 30 and has a hemispherical shape corresponding to the light emitting part 40. The semiconductor chip 30 and the wires 81 and 81 are embedded in the central portion of the sealing portion 70, and part of the surfaces of the terminal portions 22 and 22 are in contact with the sealing portion 70. Thereby, the sealing unit 70 not only protects the semiconductor chip 30 and the wires 81 and 81 from the external environment, but also functions as a lens that performs light distribution control of light.

  The sealing portion 70 is made of a curable resin having a high refractive index (refractive index n2 = 1.6 to 1.8). Examples of such a high refractive index curable resin include polythiourethane resins such as epoxy resins, silicon resins, acrylic resins, and urethane resins containing sulfur or cyclic hydrocarbon groups. This curable resin is obtained by curing a mixed solution 70B of a monomer curable resin and a polymerization catalyst by a polymerization reaction. Thereby, the surface (substrate 41) on the light emission side of the semiconductor chip 30 is higher than a refractive index (refractive index n3 = 1.5) such as epoxy resin or silicon resin, for example, sapphire (refractive index n1 = 1. 76) (see FIG. 3), the light is sealed from the semiconductor chip 30 side as compared with the case where a low refractive index material such as epoxy resin or silicon resin is used as the material of the sealing portion 70. When proceeding to the 70 side, the critical angle at the interface between the semiconductor chip 30 and the sealing portion 70 becomes extremely large. In the case where the substrate 41 is made of a material having a lower refractive index than that of the sealing portion 70, when light travels from the semiconductor chip 30 side to the sealing portion 70 side, the semiconductor chip 30 and the sealing portion 70 There is no total reflection at the interface.

  By the way, the mixed solution 70B described above is a solution obtained by mixing the monomer curable resin and the polymerization catalyst with each other as described above. The degree is almost zero. That is, the viscosity is as low as water and the fluidity is extremely high. For this reason, in the present embodiment, a dome-shaped cap portion 80 is used as will be described later in order to hold the mixed solution 70B having such extremely high fluidity.

  The cap unit 80 is made of, for example, polycarbonate resin, cycloolefin resin, glass, or the like. The cap portion 80 has a dome shape corresponding to the hemispherical shape of the sealing portion 70, and has openings 81 and 81 corresponding to portions other than the hemispherical shape of the sealing portion 70. As will be described later, the opening 81 is a hole for injecting the mixed solution 70B into the gap between the semiconductor chip 30 and the cap unit 80 using the resin injector 230, and by injecting the mixed solution 70B. The hole will be blocked.

  The light emitting diode 1 having such a configuration can be manufactured, for example, as follows. Since the semiconductor light emitting element 10 and the cap part 80 can be manufactured by a known manufacturing method, description of the manufacturing method is omitted, and in the following, the cap part 80 is formed on the semiconductor light emitting element 10. Then, an example of a manufacturing method when providing the sealing portion 70 will be described.

  Now, when providing the sealing portion 70 in the gap between the semiconductor light emitting element 10 and the cap portion 80, an oven 200 as shown in FIG. 4 is used. The oven 200 is provided with a pedestal 210 on which the semiconductor light emitting element 10 is placed at the bottom, and a connection terminal portion 211 connected to a terminal of the power supply 300 is provided on the upper surface of the pedestal 210. Here, since about 80% of the input energy is converted into heat, the light emitting unit 40 of the semiconductor light emitting element 10 can sufficiently function as a heat source. Accordingly, it is possible to apply a voltage from the power supply 300 to the light emitting unit 40 of the semiconductor light emitting element 10 to cause the light emitting unit 40 to emit light and generate heat, and to heat the mixed solution 70B with the heat. In addition, the oven 200 is provided with a heater 220 at the top as a heat source separate from the light emitting unit 40. Accordingly, it is possible to apply a voltage from the power supply 300 to the heater 220 to cause the heater 220 to generate heat and to heat the mixed solution 70B with the heat. That is, the oven 200 has two heat sources capable of heating the mixed solution 70B, one of which is mixed from the inside of the mixed solution 70B and the other is mixed from the outside of the mixed solution 70B, either separately or simultaneously. The solution 70B can be heated. Hereinafter, a case where the light emitting unit 40 and the heater 220 are driven simultaneously will be described.

  First, after placing the semiconductor light emitting element 10 and the cap part 80 on the base 210 of the oven 200, the connection terminal parts 211 and 211 are brought into contact with the terminal parts 22 and 22 so that the semiconductor light emitting element 10 can be turned on (step). S1, FIG. 4, FIG. 7). Subsequently, the mixed solution 70B is poured from the resin injector 230 into the injection port 151 of the cap unit 180, and the mixed solution 70B is filled in the gap between the semiconductor light emitting element 10 and the cap unit 80 (step S2, FIG. 5, FIG. 7). ).

  Thereafter, a voltage is applied from the power source 300 to the light emitting unit 40 to emit the light L1 from the light emitting unit 40 and to generate heat, and at the same time, a voltage is applied from the power source 300 to the heater 230 to 230 generates heat (step S3, FIG. 6, FIG. 7).

  At this time, it is preferable to set the driving conditions of the light emitting unit 40 and the heater 230 so that the temperature of the light emitting unit 40 is equal to or higher than the atmospheric temperature of the oven 200. However, it is necessary to set the temperature of the light emitting unit 40 to a value lower than the temperature at which the light emitting unit 40 can be deteriorated (for example, about 120 ° C.). For example, when the atmospheric temperature of the oven 200 is 80 ° C., the case where the temperature of the light emitting unit 40 is set to 90 ° C. is considered. First, it is assumed that the overall thermal resistance of the semiconductor light emitting element 10 and the bases 210 and 210 is 40 ° C./W. At this time, in order to make the temperature of the light emitting unit 40 higher by 10 ° C. than the atmospheric temperature of the oven 200, 10 ° C./(40° C./W)=0.25 W is formally introduced into the light emitting unit 40. Actually, however, approximately 80% of the input energy is converted into heat, so it can be understood that 0.25 W / 0.8 = 0.31 W may be input.

  As a result, the mixed solution 70B is heated and cured from the light emitting unit 40 side, and is also heated and cured from the cap unit 80 side. As a result, the sealing unit 70 can be formed from the mixed solution 70B. In this way, the light emitting diode 1 of the present embodiment is manufactured.

  Next, operations and effects of the light-emitting diode 1 of the present embodiment will be described. In the light emitting diode 1, when a predetermined voltage is applied between the p-side electrode 46 and the n-side electrode 47, electrons are injected from the n-side electrode 47 and holes are injected from the p-side electrode 46 into the active layer 43. Is done. The electrons and holes injected into the active layer 43 are recombined to generate photons from the active layer 43. As a result, emitted light is transmitted from the back surface of the substrate 41 through the sealing portion 70 and the cap portion 80. And injected outside. At this time, the light emitted outside is controlled by the hemispherical interface between the sealing unit 50 and the cap unit 80.

  Here, when a material having a low refractive index (n3 = about 1.5) such as an epoxy resin or a silicon resin is used as the material of the sealing portion 70, the refractive index n1 is, for example, as the substrate 41 of the semiconductor chip 30. When sapphire of about 1.76 is used, the difference in refractive index at the interface between the substrate 41 and the sealing portion 70 increases as shown in FIG. Therefore, since the critical angle at the interface between the substrate 41 and the sealing portion 70 when the light travels from the substrate 41 side to the sealing portion 70 side is reduced, the light moves from the semiconductor chip 30 side to the sealing portion 70 side. As it progresses, the ratio of total reflection or Fresnel reflection at the interface between the semiconductor chip 30 and the sealing portion 70 increases. As a result, most of the reflected light is absorbed by the active layer 43 or the like in the semiconductor chip 30. Therefore, when such a configuration is adopted, the light extraction efficiency is lowered.

  On the other hand, in the present embodiment, since a curable resin having a high refractive index (refractive index n2 = 1.6 or more and 1.8 or less) is used as the material of the sealing portion 70, the substrate 41 of the semiconductor chip 30 is used. When a material having a refractive index higher than the refractive index (refractive index n3 = about 1.5) such as epoxy resin or silicon resin, for example, sapphire having a refractive index n1 of about 1.76, epoxy is used as the material of the sealing portion 70. Compared to the case of using a low refractive index material such as resin or silicon resin, the critical angle at the interface between the semiconductor chip 30 and the sealing portion 70 when light travels from the semiconductor chip 30 side to the sealing portion 70 side. Can be made extremely large. When a material having a refractive index lower than that of the sealing unit 70 is used as the substrate 41 of the semiconductor chip 30, when the light travels from the substrate 41 side to the sealing unit 70 side, the substrate 41 and the sealing unit There is no total reflection at the interface with 70. Accordingly, the ratio of light that travels from the substrate 41 side to the sealing portion 70 side is totally reflected or Fresnel reflected at the interface between the substrate 41 and the sealing portion 70 can be extremely reduced, thereby improving light extraction efficiency. be able to.

  Note that the above operations and effects are based on the premise that the substrate 41 and the sealing portion 70 are in contact with each other without any gap as shown in FIG. That is, if there is a gap even between submicron between the substrate 41 and the sealing portion 70, the critical angle is defined by the relationship between the substrate 41 and the gap, so that even if the refractive index is used as the material of the sealing portion 70 Even if a high curable resin is used, the light extraction efficiency cannot be improved. On the other hand, in the present embodiment, the light emitting unit 40 is caused to generate heat by actively utilizing the property that the mixed solution 70B is sequentially cured by a polymerization reaction from a region where the heating temperature is high, and the heat causes the mixed solution 70B to be heated. Since heating and curing are performed from the light emitting unit 40 side, it is possible to hardly transmit strain (stress) due to shrinkage hardening of the mixed solution 70B to the light emitting unit 40. Thereby, in the process of curing the mixed solution 70B, the possibility that the mixed solution 70B is peeled off from the surface of the semiconductor light emitting device 10 can be eliminated, so that the light extraction efficiency can be reliably improved.

  In the present embodiment, since the light emitting unit 40 generates heat and the heater 220 also generates heat, the temperature inside the mixed solution 70B is approximately equal to the temperature outside the mixed solution 70B, or the mixed solution It becomes possible to make it higher than the temperature outside 70B. Thereby, compared with the case where the mixed solution 70B is heated and cured only by the heater 220, the time required to complete the curing can be shortened, so that the productivity can be increased.

  In the present embodiment, the mixed solution 70B is cured while the light emitting unit 40 emits light and generates heat. Therefore, the mixed solution 70B is formed under almost the same conditions as when the light emitting diode 1 is used. It can be cured. Thereby, the light emitting diode 1 is used compared with the case where the mixed solution 70B is hardened in the state where the temperature inside the mixed solution 70B is low like the case where the mixed solution 70B is heated only with the heater 220. Sometimes, the magnitude of the stress that the light emitting unit 40 receives from the sealing unit 70 can be reduced. As a result, when the light emitting diode 1 is used, there is no possibility that the sealing portion 70 damages the semiconductor light emitting element 10 or peels from the semiconductor light emitting element 10, so that reliability can be improved.

  While the present invention has been described with reference to the embodiment, the present invention is not limited to this and can be variously modified.

  For example, in the above embodiment, a voltage is simultaneously applied to the light emitting unit 40 and the heater 230 to heat and cure the mixed solution 70B from the inside and the outside. However, a voltage is applied only to the light emitting unit 40. Then, the mixed solution 70B may be heated and cured from the inside. Even in such a case, it is possible to prevent the distortion due to the shrinkage hardening of the mixed solution 70B from being transmitted to the light emitting unit 40, and in the process of hardening the mixed solution 70B, as in the above embodiment. This is because the solution 70B can be removed from the surface of the semiconductor light emitting device 10 and the light extraction efficiency can be reliably improved.

  Moreover, in the said embodiment, although the heater 220 was provided in the place away from the semiconductor light-emitting device 10, as shown in FIG. 8, the semiconductor light-emitting device 10 is connected to the upper heater 221 and the lower heater 222. The mixed solution 70B may be heated to be cured.

  Further, in the above embodiment, the sealing portion 70 is formed using the mixed solution 70B having extremely high fluidity. However, before the mixed solution 70B is injected into the opening 81, the mixed solution 70B is added. It may be preliminarily polymerized to reduce the fluidity and then injected into the opening 81. Here, “preliminarily” means that the fluidity of the mixed solution 70B is lowered, for example, by leaving the mixed solution 70B in the external environment at room temperature for a while or by irradiating it with natural light. This means that the case where the action is not intentionally given to the mixed solution 70B is excluded, and the fluidity of the mixed solution 70B is increased by heating the mixed solution 70B or irradiating predetermined light. It means to include the case where the act to reduce is actively done. Thereby, since the process of reducing the fluidity of the mixed solution 70B and the process of curing the mixed solution 70B can be separated, the process of reducing the fluidity of the mixed solution 70B is performed separately as a previous process. Thus, the time required for the curing step after injecting the mixed solution 70B into the opening 81 can be shortened.

  In addition, by separately performing the step of reducing the fluidity of the mixed solution 70B as a previous step in this manner, the mixed solution 70B can be contracted to some extent before the curing step is performed. As a result, the shrinkage rate of the mixed solution 70B in the curing step is inevitably reduced, so that almost no distortion (stress) to the light emitting portion 40 due to the shrinkage hardening of the mixed solution 70B can be eliminated. Therefore, there is no possibility that performance degradation or damage of the semiconductor light emitting element 10 due to curing shrinkage occurs.

  In addition, since the time required for the curing process can be shortened in this way, there is no possibility that the performance degradation or damage of the semiconductor light emitting element 10 due to the high temperature in the curing process will occur.

  Moreover, even if the opening 81 for injecting the mixed solution 70B does not exist on the upper surface, the mixed solution 70B can be injected or the injected mixed solution 70B can be held. A light emitting diode can be manufactured. Hereinafter, for example, several methods for manufacturing the light-emitting diode 2 having no cap portion 80 as illustrated in FIG. 9 will be described. In FIG. 9, a substrate 90 having a metal plate 91, an insulating layer 92, a terminal portion 93, and an adhesive layer 93 is used instead of the lead frame 20.

  For example, as shown in FIGS. 10A to 10C, after the mother die 240 is arranged corresponding to the semiconductor chip 30 of the substrate 90 on which the semiconductor chip 30 is mounted, the mother die 240 and the substrate 90 are arranged. The mixed solution 70B having reduced fluidity is injected from the gap between the two, and the inside of the mother mold 240 is filled with the mixed solution 70B. Thereafter, a voltage is applied to the light emitting unit 40 to heat and cure the mixed solution 70B. Thus, the light emitting diode 2 can be manufactured by forming the sealing portion 70.

  In addition, for example, as illustrated in FIGS. 11A to 11C, the mixed solution 70 </ b> B with reduced fluidity is dropped corresponding to the semiconductor chip 30 of the substrate 90 on which the semiconductor chip 30 is mounted. When the mixed solution 70B has a predetermined shape, a voltage is applied to the light emitting unit 40 to heat and cure the mixed solution 70B. By forming the sealing portion 70 in this manner, the light emitting diode 2 can be manufactured.

  Further, for example, as shown in FIGS. 12A to 12D, after applying a mixed solution 70 </ b> B having reduced fluidity onto a substrate 90 on which a plurality of semiconductor chips 30 are mounted, each semiconductor chip 30. A matrix 250 having a depression corresponding to is embedded in the applied mixed solution 70B. Thereafter, a voltage is applied to the light emitting unit 40 to heat and cure the mixed solution 70B. Thus, the light emitting diode 3 can also be manufactured by forming the sealing part 70.

  For example, as shown in FIG. 13, when the reflective structure 95 is provided on the substrate 90 so as to surround the periphery of the semiconductor chip 30, the inner side of the reflective structure 95, that is, on the semiconductor chip 30. Since the mixed solution 70B can be filled, the above-described matrix is not necessary. In this case, the inside of the reflective structure 95 is filled with the mixed solution 70B having reduced fluidity to form a dome shape, and then a voltage is applied to the light emitting unit 40 to heat and cure the mixed solution 70B. Thus, the light emitting diode 4 can also be manufactured by forming the sealing part 70.

  By the way, when the curable resin contains sulfur, by allowing the polymerization reaction of the mixed solution 70B to proceed in this way, the sulfur contained in the curable resin is molecularly bonded to other elements by the polymerization reaction. In addition, the reactivity of sulfur with metals can be significantly reduced. Thereby, even if the metal parts such as the terminal portions 22 and 22, the p-side electrode 46, the n-side electrode 67, the extraction electrodes 52 and 52, and the wires 60 and 60 come into contact with the mixed solution 70B, they are included in the mixed solution 70B. The reactivity of sulfur with these metal parts can be suppressed. As a result, the curing of the mixed solution 70B can be completed before these metal parts are deteriorated or damaged. Therefore, even if sulfur is contained in the curable resin, the metal parts are thereby deteriorated. There is no risk of damage. Therefore, a highly reliable light emitting diode can be realized.

  Further, by allowing the polymerization reaction of the mixed solution 70B to proceed in advance in this way, the malodor of sulfur does not diffuse around in the curing step, so that the mixed solution 70B can be handled easily.

  In the above-described embodiments and modifications, the case where the present invention is applied to a light emitting diode has been described. However, the present invention is not limited to this, and other semiconductor devices such as an organic EL device, a power IC, and the like. It is also possible to apply it.

It is a section lineblock diagram of a light emitting diode concerning one embodiment of the present invention. FIG. 2 is a cross-sectional configuration diagram of the semiconductor chip of FIG. 1. It is a distribution map of the refractive index in the interface of a board | substrate and a sealing part, and its vicinity. FIG. 2 is a cross-sectional configuration diagram for explaining a manufacturing process of the light emitting diode of FIG. 1. FIG. 5 is a cross-sectional configuration diagram for explaining a manufacturing process continued from FIG. 4. FIG. 6 is a cross-sectional configuration diagram for explaining a manufacturing process continued from FIG. 5. It is a flowchart for demonstrating the manufacturing process of the light emitting diode of FIG. It is a cross-sectional block diagram for demonstrating the other manufacturing method of the light emitting diode of FIG. It is a cross-sectional block diagram of the light emitting diode which concerns on one modification. 10 is a flowchart for explaining a manufacturing process of the light emitting diode of FIG. 9. FIG. 10 is a cross-sectional configuration diagram for explaining another method for manufacturing the light emitting diode of FIG. 9. It is a cross-sectional block diagram for demonstrating the manufacturing process of the light emitting diode which concerns on another modification. It is a cross-sectional block diagram of the light emitting diode which concerns on another modification. It is a cross-sectional block diagram of the conventional light emitting diode. It is a cross-sectional block diagram of the semiconductor chip of FIG. FIG. 15 is a cross-sectional configuration diagram for explaining a manufacturing process of the light-emitting diode of FIG. 14.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1-4 ... Light emitting diode, 10 ... Semiconductor light emitting element, 20 ... Lead frame, 21 ... Slag part, 22 ... Terminal part, 23 ... Adhesive layer, 24 ... Frame part, 30 ... Semiconductor chip, 40 ... Light emitting part, 41 ... Substrate, 42 ... n-type semiconductor layer, 43 ... active layer, 44 ... p-type semiconductor layer, 45 ... mesa portion, 46 ... p-side electrode, 47 ... n-side electrode, 50 ... submount substrate, 51 ... insulating substrate, 52 ... Extraction electrode, 53 ... Bump, 60 ... Wire, 70 ... Sealing part, 70B ... Mixed solution, 80 ... Cap part, 81 ... Opening part, 90 ... Substrate, 91 ... Metal plate, 92 ... Insulating layer, 93 ... Terminal Part, 94 ... adhesive layer, 95 ... reflective structure, 200 ... oven, 210 ... pedestal, 211 ... connection terminal part, 220 ... heater, 221 ... upper heater, 222 ... lower heater.

Claims (14)

Immersing at least a part of the surface of the semiconductor element in a curable resin;
Applying a voltage to the semiconductor element, and curing the curable resin by heat generated from the semiconductor element. 2. The semiconductor device according to claim 1, wherein a voltage is applied to the semiconductor element and the curable resin is cured from the inside and the outside of the curable resin using a heat source other than the semiconductor element. Production method. The driving conditions of the heat source other than the semiconductor element and the semiconductor element are respectively set so that the temperature inside the curable resin is equal to or higher than the temperature outside the curable resin. Item 3. A method for manufacturing a semiconductor device according to Item 2. The method for manufacturing a semiconductor device according to claim 1, wherein the curable resin is a transparent resin having a refractive index of 1.6 to 1.8. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor element is a light emitting diode. The method of manufacturing a semiconductor device according to claim 1, further comprising: preliminarily polymerizing the curable resin before immersing the semiconductor element in the curable resin. Preliminarily polymerizing a curable resin containing sulfur; and
Immersing the surface containing at least the metal part of the semiconductor element having an exposed metal part in the polymerization-curable curable resin; and
And a step of curing the curable resin subjected to the polymerization reaction in a state where the surface is immersed. The method for manufacturing a semiconductor device according to claim 7, wherein the surface is immersed in the polymerization-curable curable resin by pouring the polymerization-curable curable resin into a matrix. The method for manufacturing a semiconductor device according to claim 7, wherein the polymerization reaction is dropped on the surface to immerse the surface in the polymerization reaction. The curable resin is a thermosetting resin,
The method of manufacturing a semiconductor device according to claim 7, wherein the curable resin is polymerized by heating. The curable resin is a photocurable resin,
The method for manufacturing a semiconductor device according to claim 7, wherein the curable resin is polymerized by irradiation with light. The method of manufacturing a semiconductor device according to claim 7, wherein the curable resin is a transparent resin containing sulfur having a refractive index of 1.6 to 1.8. The method of manufacturing a semiconductor device according to claim 7, wherein the semiconductor element is a light emitting diode. A semiconductor element having an exposed metal portion;
A sealing portion formed by a polymerization reaction in a state where a curable resin containing sulfur, which has been preliminarily polymerized, is in contact with a surface including at least the metal portion of the semiconductor element. A semiconductor device characterized by the above.

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