JP2007132722A - Probe card, its manufacturing method, and inspection method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe card hardly deforming the protrudent electrodes at the time of electric performance inspection or the burn in test, without the occurrence of positional deviation for the semiconductor device having protrudent electrodes and capable of securing stable contact properties. <P>SOLUTION: The probe card used for inspecting the semiconductor device 5 having a plurality of protrudent electrodes 6, on the principal surface of the substrate 1 of polyimide, the metal bump 2 constituted of at least three or more hemispheric metals (e.g. Ni) to one protrudent electrode 6 of the semi-conductor device 5 are formed so as to overlap with each hemispherical metal partially to each other. On another side of the principal surface the patterned metal pads 3 are formed corresponding to the protrudent electrodes 6 of the inspection object semiconductor device 5. The metal pad 3 and metal bump 2 formed at least three or more hemispheric metals overlapping are electrically connected respectively with metal filled in the through hole 4 of the substrate 1. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe card for inspecting a semiconductor device having a protruding electrode or a semiconductor wafer on which a plurality of the semiconductor devices are formed, and more particularly to a structure of a contact portion in the probe card.

  In recent years, as information communication devices and office electronic devices have become smaller and more advanced, semiconductor devices such as semiconductor integrated circuit devices mounted on these electronic devices have become smaller. There is a demand to increase the number of external terminals for input and output.

  As a technique for realizing these requirements, semiconductor devices having protruding electrodes such as solder balls as external connection terminals, such as BGA (Ball Grid Array) type packages, have been widely used. In addition, since a bare chip is directly mounted on a circuit board, a semiconductor device having a structure in which a protruding electrode such as solder is formed on an element electrode of a semiconductor chip is often used. As a method for forming the protruding electrode, Various methods for dividing the semiconductor device into individual semiconductor devices after forming the protruding electrodes in a semiconductor wafer state have been developed.

  Further, a semiconductor device called a wafer level CSP in which wiring (rearrangement wiring) for connecting element electrodes of a semiconductor chip to the outside and external connection terminals such as solder balls are formed in the state of a semiconductor wafer and then separated into pieces. The demand for is also increasing.

  As described above, a plurality of semiconductor devices having protruding electrodes are often mounted on a circuit board, and even if one of them is abnormal, the entire device becomes defective. Therefore, it is expensive for individual bare chips or semiconductor devices. Reliability is required. Therefore, an inspection for checking whether there is an abnormality in each bare chip or semiconductor device has become an important issue.

  Examples of the inspection for the presence or absence of abnormality of a semiconductor device having a protruding electrode as an external connection terminal include an electrical characteristic test (electrical characteristic inspection) and a burn-in test performed thereafter. These inspections (tests) are required to have high reliability and low cost. Therefore, it is preferable to perform the inspection after forming the protruding electrode, that is, immediately before mounting on the circuit board, rather than before forming the protruding electrode. Furthermore, as described above, in the case of the semiconductor device in which the protruding electrodes are formed in the wafer state, it is more efficient to perform the inspection in the wafer state collectively than in the case where the inspection is performed after being separated into pieces. This is also advantageous.

  By the way, as a method of conducting an electrical property inspection or a burn-in test of a semiconductor device having a protruding electrode, for example, there is a method of using a test socket for semiconductor. This semiconductor test socket has a plurality of probes (needles) corresponding to the plurality of protruding electrodes of the semiconductor device, and the tip of the probe is pressed against the protruding electrode to connect the socket and the protruding electrode. .

  On the other hand, when conducting an electrical property inspection or a burn-in test in a wafer state, for example, a method for performing a burn-in test in a wafer state collectively on a general wafer without protruding electrodes is disclosed in, for example, Patent Document 1. Yes.

  In Patent Document 1, as shown in FIGS. 12 and 13, one surface of the membrane 101 has hemispherical bumps 102 that are brought into contact with pads of semiconductor devices (chips) of the semiconductor wafer, and the other side of the membrane 101. And a bump-fitted membrane ring 105 having a structure in which the bump 102 and the pad 103 are connected via a bump hole 104 formed through the membrane 101. A multilayer wiring board (not shown) for applying a predetermined burn-in test signal is provided to each bump 102 electrically connected to the pad 103 of the membrane ring 105 and isolated on the membrane 101 via the pad 103, and these bumps are provided. Called burn-in board with membrane ring 105 and multilayer wiring board Constitute the probe card.

When inspecting each semiconductor device of the semiconductor wafer, the hemispherical bumps 102 of the probe card are pressed against the pads of the semiconductor devices of the semiconductor wafer to be connected to the pads of the semiconductor devices of the semiconductor wafer. A burn-in test is performed by giving a test signal.
Japanese Patent No. 3645095

However, the conventional method using the above-described semiconductor test socket or probe card called burn-in board has the following problems.
In the case of an inspection using a test socket for semiconductors, the probe is pressed against the protruding electrode, so that the protruding electrode may be deformed. When the protruding electrode is a solder-based material, the surface of the protruding electrode is oxidized. Since an object is formed, it is necessary to sufficiently press in order to make a reliable contact, and the amount of deformation is further increased, which may cause problems during mounting.

  On the other hand, when a burn-in test is performed on a semiconductor device having a protruding electrode in a wafer state, if a burn-in board having a hemispherical bumped membrane ring 105 is used, the spheres come into contact with each other, resulting in misalignment. However, there are cases where contact cannot be reliably obtained, and even when no positional deviation occurs, the protruding electrode may be deformed, causing a problem during mounting.

  Therefore, the present invention relates to a probe card that can ensure stable contact without causing displacement of a protruding electrode when the electrical characteristics inspection or burn-in test is performed in a semiconductor device having the protruding electrode, and An object of the present invention is to provide a manufacturing method and a method for inspecting a semiconductor device.

  In order to achieve the above-mentioned object, the invention according to claim 1 of the present invention is used for inspecting a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed. A probe card, comprising a metal bump electrically connected to each protruding electrode of the semiconductor device on a substrate, wherein at least three metal bumps are provided for one protruding electrode of the semiconductor device. It consists of the above hemispherical metals.

  According to this configuration, since the position of the protruding electrode of the semiconductor device is regulated by the metal bump made of the at least three hemispherical metals, the protruding electrode is hardly deformed and is displaced. It is possible to make contact without any problem and to ensure electrical connection (to ensure stable contact).

  According to a second aspect of the present invention, there is provided a probe card used for inspecting a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed, wherein the semiconductor device is mounted on a substrate. Metal bumps electrically connected to the respective projecting electrodes of the semiconductor device, each metal bump being composed of two or more hemispherical metals with respect to one projecting electrode of the semiconductor device, and the semiconductor A line connecting the centers of the two or more hemispherical metals corresponding to two adjacent protruding electrodes among the protruding electrodes of the device has a structure having an angle of 90 degrees.

  According to this configuration, since the position of the protruding electrode of the semiconductor device is regulated by a pair of two or more hemispherical metals having an angle of 90 degrees, the protruding electrode is unlikely to be deformed and misaligned. It is possible to ensure electrical connection (ensure stable contactability) without contact.

The probe card according to the present invention is characterized in that the metal bump has a metal layer having an uneven structure on the surface of the plurality of hemispherical metals.
In this way, even when an oxide is formed on the protruding electrode, it is possible to easily break through the oxide film by the unevenness, so that the connection with the protruding electrode of the semiconductor device can be made more reliable. it can.

  The probe card of the present invention is characterized in that metal bumps made of a plurality of hemispherical metals corresponding to the one protruding electrode are formed so that the hemispherical metals overlap each other. is there.

In this way, even when the height of the protruding electrode varies, it is possible to reliably obtain electrical connection.
In the probe card of the present invention, metal bumps made of a plurality of hemispherical metals corresponding to the one protruding electrode are formed so that the hemispherical metals do not overlap each other. Is.

  In this case, when the probe card is pressed against the semiconductor device having the protruding electrode, the space between the hemispherical metals is widened by the flexibility of the substrate, and the protruding electrode is pressed from the lateral direction. Thus, reliable electrical connection can be obtained without changing the shape of the protruding electrode in the height direction.

  In the probe card of the present invention, a metal pad patterned corresponding to the protruding electrode of the semiconductor device is provided on the surface opposite to the main surface of the substrate on which the metal bumps are provided, Through holes for electrically connecting the metal pads and the metal bumps are formed in accordance with the number of the hemispherical metals with respect to one metal pad.

  If it does in this way, each hemispherical metal of a metal bump will be connected to one metal pad via a through hole. These through holes are used when forming a hemispherical metal of a metal bump.

  The semiconductor device inspection method using the probe card according to the present invention is a method for inspecting a semiconductor device in which a plurality of semiconductor devices having protruding electrodes are formed on a semiconductor wafer, and the protruding electrodes are formed. After that, a burn-in test is performed collectively in the semiconductor wafer state using a probe card.

  In this way, a burn-in test of a plurality of semiconductor devices having projecting electrodes formed on a semiconductor wafer in a state in which electrical connection is reliably ensured without causing a positional shift is collectively performed in the state of the semiconductor wafer. It is possible to perform a burn-in test of a semiconductor device having a protruding electrode with high reliability and reduced manufacturing costs.

  Further, the present invention is a probe card used for inspecting a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed, and is electrically connected to each protruding electrode of the semiconductor device on a substrate. A method of manufacturing a probe card comprising metal bumps to be connected, wherein a step of forming a conductive metal layer on one surface of the substrate, and a position corresponding to a protruding electrode of the semiconductor device on the substrate are 1 Forming at least three or more through holes for one protruding electrode; and protecting the conductive metal layer with an insulating protective film, and the conductive metal layer against the formed through hole. Forming a metal bump made of at least three hemispherical metals on one protruding electrode of the semiconductor device by performing electroplating using a seed layer as a seed layer Removing the insulating protective film for protecting the conductive metal layer, forming a new resist pattern on the conductive metal layer, performing patterning by etching using the resist pattern as a mask, and The method includes a step of forming a metal pad electrically connected to a metal bump made of one or more hemispherical metals, and a step of removing the resist pattern.

  Further, the present invention is a probe card used for inspecting a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed, and is electrically connected to each protruding electrode of the semiconductor device on a substrate. A method of manufacturing a probe card comprising metal bumps to be connected, wherein a step of forming a conductive metal layer on one surface of the substrate, and a position corresponding to a protruding electrode of the semiconductor device on the substrate are 1 Forming at least two or more through-holes with respect to one protruding electrode so that a line connecting the centers thereof has an angle of 90 degrees between two adjacent protruding electrodes; and insulating the conductive metal layer The plated through hole is subjected to electroplating using the conductive metal layer as a seed layer, and is applied to one protruding electrode of the semiconductor device. Forming a metal bump having a 90-degree angle between two hemispherical metal centers made of at least two or more hemispherical metals and corresponding to two adjacent protruding electrodes; The insulating protective film for protecting the conductive metal layer is removed, a resist pattern is newly formed on the conductive metal layer, and patterning is performed by etching using the resist pattern as a mask. And a step of forming a metal pad electrically connected to a metal bump made of a hemispherical metal and a step of removing the resist pattern.

  In this way, it is possible to manufacture a probe card that can ensure electrical connection without causing a significant change and without causing a positional shift as compared with conventional methods for manufacturing probe cards.

  In the probe card manufacturing method of the present invention, the step of forming the metal bump includes a step of forming the hemispherical bump and a step of forming a metal layer having an uneven structure on the surface of the hemispherical bump. It is characterized by this.

In this way, it is possible to manufacture a probe card that can reliably ensure electrical connection even when it is difficult to ensure electrical connection with an oxide film.
The method for manufacturing a probe card according to the present invention is characterized in that, in the step of forming the through hole, the interval between the through holes is set to be less than twice the height of the hemispherical metal forming the metal bump. It is.

  In this way, the metal bumps made of a plurality of hemispherical metals corresponding to one protruding electrode are formed so that the hemispherical metals overlap each other, and even when the height of the protruding electrode varies. Thus, it is possible to reliably obtain an electrical connection.

  The method for manufacturing a probe card according to the present invention is characterized in that, in the step of forming the through hole, the interval between the through holes is set to be twice or more the height of the hemispherical metal forming the metal bump. It is.

  In this case, the metal bumps made of a plurality of hemispherical metals corresponding to one protruding electrode are formed so that the hemispherical metals do not overlap with each other, and the probe card is applied to the semiconductor device having the protruding electrodes. , The spacing between the hemispherical metals widens due to the flexibility of the substrate, and the protruding electrodes are pressed from the lateral direction, so it is ensured without changing the shape of the protruding electrodes in the height direction. An electrical connection can be obtained.

  The probe card of the present invention is positioned in the inspection of a semiconductor device having a protruding electrode by regulating the position of the protruding electrode by a metal bump made of a plurality of hemispherical metals with respect to one protruding electrode of the semiconductor device. Electrical connection can be made without any deviation, and this metal bump structure can be applied to batch-in burn-in tests in the wafer state, as well as ensuring electrical connection. In addition, a highly reliable semiconductor device in which burn-in screening is performed can be manufactured with reduced manufacturing cost and manufacturing lead time.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Embodiment 1]
1 and 2 show a part of a probe card according to the first embodiment of the present invention, FIG. 1 is a plan view showing a state of metal bumps as a connection portion with a semiconductor device, and FIG. The cross-sectional structure of the line -A 'is shown.

  As shown in FIG. 1 and FIG. 2, conductive metal, for example, metal bumps 2 made of nickel, are formed on the main surface of the substrate 1 made of polyimide, which are electrically connected to the protruding electrodes of the semiconductor device to be inspected. Each metal bump 2 is composed of four hemispherical metals for each protruding electrode, and the hemispherical metals are formed so as to partially overlap each other.

  Further, the surface opposite to the main surface of the substrate 1 (the surface in contact with each protruding electrode of the semiconductor device) is patterned from a conductive metal such as copper, which is patterned corresponding to the protruding electrode of the semiconductor device to be inspected. A metal pad 3 is formed.

  In addition, the metal bump 2 in which the metal pad 3 and the four hemispherical metals overlap each other is electrically supplied by nickel which is a constituent metal of the four through holes 4 penetrating the substrate 11 and the metal bumps 2 filled in the through holes. Connected.

  In the first embodiment, the number of hemispherical metals of the metal bumps 2 is 4. However, the number of hemispherical metals is not limited to 4, and may be three or more and arranged in a ring shape. Further, the metal bump 2 is not limited to nickel, and may be a nickel-based alloy or the like. Further, a film containing a metal that does not oxidize such as gold may be further formed on the surface of the metal bump 2.

FIG. 3 is a cross-sectional view showing a connection portion when a semiconductor device having a solder ball as a protruding electrode is inspected with the probe card shown in FIGS.
The protruding electrode 6 of the semiconductor device 5 has a shape in which the top of the metal bump 2 fits into the depression at the center of the four hemispherical metals, and the protruding electrode 6 of the semiconductor device 5 is composed of four hemispherical metals. The position is regulated by the metal bump 2.

  Next, a method for manufacturing the probe card configured as described above will be described with reference to FIGS. 4A to FIG. 4D and FIG. 5A to FIG. 5D show a cross-sectional configuration taken along line A-A ′ in FIG.

  First, as shown in FIG. 4A, a film 41 having a structure in which a copper foil having a thickness of 18 μm (an example of a conductive metal layer) and a polyimide film having a thickness of 25 μm are bonded together is prepared. The film 41 becomes the substrate 1 made of polyimide. In addition, the material of the polyimide film 41, a formation method, thickness, etc. are not restricted above, It can select suitably. For example, a silicon rubber sheet may be used instead of the polyimide film, or a copper film may be formed by sputtering or plating instead of bonding the copper foil.

  Next, as shown in FIG. 4B, using an excimer laser at a predetermined position (position facing each protruding electrode 6) of the polyimide film 41, four throughs per one metal bump 2 (projecting electrode 6). Hole 4 is formed. The distance between the centers of these through holes 4 is made smaller than twice the height of the metal bumps 2. The method for forming the through hole is not limited to the excimer laser, and the through hole may be formed mechanically using a drill.

Next, as shown in FIG. 4C, an insulating protective film 42 is formed on the copper foil of the polyimide film 41 except for the electrode part for electroplating.
Next, as shown in FIG. 4D, nickel electroplating is performed on the through-hole 4 with the electrode portion for electroplating (copper foil of the polyimide film 41) as a seed layer. By this electroplating, nickel grows so as to fill the through-hole 4 and then reaches the main surface of the polyimide film 41. Nickel grows isotropically into a hemispherical shape, but the distance between the centers is bump. Since the height is smaller than twice the height, the nickel metal bumps 2 grown from the four through holes 4 are partially overlapped with each other.

Next, as shown in FIG. 5A, the insulating protective film 42 is removed.
Next, as shown in FIG. 5B, an etching resist is newly applied on the copper foil of the polyimide film 41, and exposure and development are performed to form a resist pattern 43 corresponding to the metal pad 3.

Next, as shown in FIG.5 (c), wet etching is performed and the copper foil of the polyimide film 41 is patterned, and the metal pad 3 which consists of copper is formed.
Next, by removing the etching resist pattern as shown in FIG. 5D, the polyimide film 41 (substrate 1 made of polyimide) has the metal bumps 2 and the metal pads 3, and the metal bumps 2 and the metal A connection portion corresponding to the protruding electrode 6 of the semiconductor device 5 of the probe card according to the first embodiment of the present invention in which the pad 3 is electrically connected through the through hole 4 is formed.

Thereafter, although not shown, a probe card used for inspecting a semiconductor device having a protruding electrode is manufactured by a known method.
In the manufacturing method, the metal bump 3 is made of only nickel. However, the metal bump 3 is not limited to nickel, and a nickel-based alloy may be used, or a thin film made of gold may be formed on the surface of the metal bump 3.

  As described above, according to the first embodiment, the protruding electrode 6 of the semiconductor device 5 has a shape in which the top of the metal bump 2 fits into the depression at the center of at least three or more hemispherical metals. The protruding electrode 6 of the device 5 is regulated in position by the metal bumps 2 made of at least three or more hemispherical metals, so that the four hemispherical metals and the spherical protrusions that constitute the metal bumps 2 as in the prior art. No positional shift occurs when the electrode 6 is brought into contact, and it is possible to reliably ensure the electrical connection between the protruding electrode 6 and the metal bump 2 in a state in which the protruding electrode 6 is hardly deformed in the height direction. (Stable contact can be ensured). Further, since the hemispherical metals of the metal bump 2 are formed so as to overlap each other, even when the height of the protruding electrode 6 varies, an electrical connection can be reliably obtained.

Also, according to the probe card manufacturing method, it is possible to manufacture a probe card that can ensure electrical connection without causing a significant change and without causing a positional shift as compared with conventional probe card manufacturing methods. it can. Then, a highly reliable semiconductor device for which burn-in screening is performed can be manufactured with reduced manufacturing cost and manufacturing lead time.
[Embodiment 2]
6 and 7 show a part of the probe card according to the second embodiment of the present invention, FIG. 6 is a plan view showing a state of metal bumps that are connection portions with the semiconductor device, and FIG. The cross-sectional structure of the BB 'line part in is shown.

  As shown in FIGS. 6 and 7, two hemispherical metals are formed on the main surface of the substrate 11 made of polyimide so as to partially overlap each other with respect to one protruding electrode, and the semiconductor device 5 A line connecting the centers of two hemispherical metals corresponding to two adjacent protruding electrodes 6 among the protruding electrodes 6 has a structure having an angle of 90 degrees, and metal bumps 12 made of metal, for example, nickel are formed. Yes.

  Further, the surface opposite to the main surface of the substrate 11 (the surface in contact with each protruding electrode of the semiconductor device) is patterned from a conductive metal such as copper, which is patterned corresponding to the protruding electrode of the semiconductor device to be inspected. A metal pad 13 is formed.

  In addition, the metal bump 12 in which the metal pad 13 and the two hemispherical metals overlap each other is electrically supplied by nickel which is a constituent metal of the two through holes 14 penetrating the substrate 1 and the metal bumps 12 filled in the through holes. Connected.

  In the second embodiment, the number of the hemispherical metals of the metal bumps 12 is 2. However, the number of hemispherical metals is not limited to 2, but may be two or more and arranged in a ring shape. Further, the metal bump 2 is not limited to nickel, and may be a nickel-based alloy or the like. Further, a film containing a metal that does not oxidize such as gold may be further formed on the surface of the metal bump 2.

  The probe card manufacturing method configured as described above does not need to go through different steps from the probe card manufacturing method in the first embodiment, and one protrusion is formed when the through hole shown in FIG. 4B is formed. The two through holes 14 are formed with respect to the electrode 6 so that the line connecting the centers thereof has an angle of 90 degrees between the two adjacent protruding electrodes 6.

  As described above, according to the second embodiment, the position of the protruding electrode 6 of the semiconductor device 5 is regulated by a pair of two or more hemispherical metals having an angle of 90 degrees of the metal bump 12. In a state in which the protruding electrode 6 is hardly deformed in the height direction, the protruding electrode 6 can be brought into contact without causing a positional shift, and electrical connection between the protruding electrode 6 and the metal bump 12 can be ensured (stable contact property is ensured). Can be secured). Further, since the hemispherical metals of the metal bump 2 are formed so as to overlap each other, even when the height of the protruding electrode 6 varies, an electrical connection can be reliably obtained.

Also, according to the probe card manufacturing method, it is possible to manufacture a probe card that can ensure electrical connection without causing a significant change and without causing a positional shift as compared with conventional probe card manufacturing methods. it can. Then, a highly reliable semiconductor device for which burn-in screening is performed can be manufactured with reduced manufacturing cost and manufacturing lead time.
[Embodiment 3]
8 and 9 show a part of the probe card according to the third embodiment of the present invention, FIG. 8 is a plan view showing a state of metal bumps which are connection parts with the semiconductor device, and FIG. The cross-sectional structure of the CC 'line part in is shown. Note that the same configuration as that in the first embodiment is used. The same reference numerals are given and description thereof is omitted.

  As shown in FIG. 8 and FIG. 9, in the probe card according to the third embodiment of the present invention, the surface of four hemispherical metals of the metal bump 2 is newly provided on the surface of the hemisphere with a pitch of several micrometers and high. An uneven metal layer 7 having a rectangular uneven structure with a length of several micrometers is formed.

  The probe card manufacturing method configured as described above does not need to go through different steps from the probe card manufacturing method in the first embodiment, and continues after the nickel electroplating step shown in FIG. In addition, a step of performing nickel-like nickel plating on the surface of the metal bump 2 (a step of forming a metal layer having an uneven structure on the surface of the hemispherical bump) may be added.

As described above, according to the third embodiment, even when an oxide is formed on the protruding electrode 6 of the semiconductor device 5 and the connectivity is poor, the oxide film is easily broken by the rectangular uneven metal layer 7. Therefore, the electrical connection between the protruding electrode 6 and the metal bump 2 can be ensured reliably.
[Embodiment 4]
10 and 11 show a part of the probe card according to the fourth embodiment of the present invention. FIG. 10 is a plan view showing a state of metal bumps as a connection portion with the semiconductor device. FIG. The cross-sectional structure of the DD 'line part in is shown.

  As shown in FIGS. 10 and 11, metal bumps 32 made of a conductive metal, for example, nickel, electrically connected to the protruding electrodes of the semiconductor device to be inspected on the main surface of a flexible polyimide substrate 31. Each metal bump 32 is made of three hemispherical metals for each protruding electrode, and the hemispherical metals are formed so as not to overlap each other.

  Further, the surface opposite to the main surface of the substrate 31 (the surface in contact with each protruding electrode of the semiconductor device) is patterned from a conductive metal, for example, copper, corresponding to the protruding electrode of the semiconductor device to be inspected. A metal pad 33 is formed.

  The metal pad 33 and the three metal bumps 32 are electrically connected by nickel which is a constituent metal of the three through holes 4 penetrating the substrate 31 and the metal bumps 32 filled in the through holes. .

  In the fourth embodiment, the number of the hemispherical metal of the metal bump 32 is 3, but the number is not limited to 3, and the number of the hemispherical metals may be three or more and arranged in an annular shape. Further, the metal bump 32 is not limited to nickel, and may be a nickel-based alloy or the like. Further, a film containing a metal that does not oxidize such as gold may be further formed on the surface of the metal bump 32.

  The probe card manufacturing method configured as described above does not need to go through different steps from the probe card manufacturing method in the first embodiment, and the through hole 34 is formed at the time of forming the through hole shown in FIG. Is set to be twice or more the height of the metal bump 32 to form the through hole 34.

As described above, according to the third embodiment, when three or more metal bumps 32 made of hemispherical metals that do not overlap each other are pressed against the protruding electrodes 6 of the semiconductor device 5, the polyimide substrate 31 is flexible. Therefore, the metal bumps 32 in which the hemispherical metals do not overlap each other are expanded (the interval between the hemispherical metals is widened), and the protruding electrodes 6 are pressed from the lateral direction. An electrical connection can be reliably obtained without changing the shape in the height direction.
[Semiconductor device inspection method]
Next, a method for inspecting a semiconductor device in which a plurality of semiconductor devices (chips) 5 having protruding electrodes 6 are formed on a semiconductor wafer and singulated is formed by forming a plurality of semiconductor chips on the semiconductor wafer by a known method. After that, the bump electrode 6 is formed as an external connection terminal on the semiconductor chip 5, and after the bump electrode 6 is formed, a burn-in test is performed in a wafer state at once using the probe card according to the present invention. Finally, it can be separated into pieces.

  By this inspection method, a burn-in test of a plurality of semiconductor devices having projecting electrodes 6 formed on a semiconductor wafer in a state in which electrical connection is reliably ensured without causing a positional shift is collectively performed in the state of the semiconductor wafer. Thus, it is possible to perform a burn-in test on a semiconductor device having a protruding electrode with high reliability and reduced manufacturing costs.

In the first, second, and fourth embodiments, the uneven metal layer 27 described in the third embodiment may be provided on each hemispherical metal surface of the metal bumps 2, 12, and 32.
In the second embodiment, the metal bumps 12 made of two hemispherical metals corresponding to one protruding electrode 6 are 2 corresponding to two adjacent protruding electrodes 6 among the protruding electrodes 6 of the semiconductor device 5. The line connecting the centers of the individual hemispherical metals has a 90 degree angle, and each hemispherical metal is formed so as to overlap each other, but each hemispherical metal is formed so as not to overlap each other. You can also.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed within the scope of the present invention.

  The probe card, the manufacturing method thereof, and the manufacturing method of the semiconductor device according to the present invention provide a method for minimizing the amount of deformation of the protruding electrode in the state in which the protruding electrode is formed in manufacturing the semiconductor device having the protruding electrode. It is useful as a technique for conducting electrical property inspection and burn-in test in a state where the connection between the electrode and the probe card is ensured.

It is a top view which shows a part of probe card in Embodiment 1 of this invention. A part of the probe card is shown, and a cross-sectional configuration taken along line A-A ′ in FIG. 1 is shown. 2 shows a part of the probe card and the semiconductor device in a state where the probe card is pressed against the semiconductor device having a protruding electrode, and shows a cross-sectional configuration of the semiconductor device corresponding to the line AA ′ in FIG. Yes. FIG. 2 is a structural cross-sectional view of a process taken along line A-A ′ in FIG. FIG. 2 is a structural cross-sectional view of a process taken along line A-A ′ in FIG. 1, illustrating a method for manufacturing the probe card in order. It is a top view which shows a part of probe card in Embodiment 2 of this invention. A part of the probe card is shown, and a cross-sectional configuration taken along line B-B ′ in FIG. 6 is shown. It is a top view which shows a part of probe card in Embodiment 3 of this invention. A part of the probe card is shown, and a cross-sectional configuration taken along line C-C ′ in FIG. 8 is shown. It is a top view which shows a part of probe card in Embodiment 4 of this invention. A part of the probe card is shown, and a cross-sectional configuration taken along line D-D ′ in FIG. 10 is shown. It is a top view which shows a part of conventional probe card. A part of the conventional probe card is shown, and the cross-sectional configuration of the E-E 'line portion in FIG. 12 is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,11,31 Board | substrate 2,12,32 Metal bump 3,13,33 Metal pad 4,14,34 Through hole 5 Semiconductor chip 6 Protruding electrode 7 Concavity and convexity metal layer 41 Polyimide film 42 Insulating film 43 Resist pattern

Claims (12)

A probe card used for inspecting a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed,
The substrate includes metal bumps that are electrically connected to the protruding electrodes of the semiconductor device,
Each of the metal bumps is made of at least three hemispherical metals with respect to one protruding electrode of the semiconductor device. A probe card used for inspecting a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed,
The substrate includes metal bumps that are electrically connected to the protruding electrodes of the semiconductor device,
Each of the metal bumps is composed of two or more hemispherical metals with respect to one protruding electrode of the semiconductor device, and corresponds to two adjacent protruding electrodes among the protruding electrodes of the semiconductor device. A probe card characterized in that a line connecting the centers of two or more hemispherical metals has an angle of 90 degrees. The probe card according to claim 1, wherein the metal bump has a metal layer having a concavo-convex structure on the plurality of hemispherical metal surfaces. The metal bump made of a plurality of hemispherical metals corresponding to the one protruding electrode is formed so that the hemispherical metals overlap each other. The probe card according to item 1. The metal bump made of a plurality of hemispherical metals corresponding to the one protruding electrode is formed so that the hemispherical metals do not overlap each other. The probe card according to any one of the above. On the surface opposite to the main surface of the substrate on which the metal bumps are provided, a metal pad that is patterned corresponding to the protruding electrode of the semiconductor device is provided,
The through hole for electrically connecting the metal pad and the metal bump is formed in the substrate in accordance with the number of the hemispherical metals with respect to one metal pad. The probe card according to any one of claims 1 to 5. A method for inspecting a semiconductor device in which a plurality of semiconductor devices having protruding electrodes are formed on a semiconductor wafer and singulated.
7. A method for inspecting a semiconductor device, comprising: performing a burn-in test collectively in the semiconductor wafer state using the probe card according to claim 1 after forming the protruding electrodes. A probe card used to inspect a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed, and is electrically connected to each protruding electrode of the semiconductor device on a substrate. A method of manufacturing a probe card comprising a metal bump,
Forming a conductive metal layer on one surface of the substrate;
Forming at least three or more through holes for one protruding electrode at a position corresponding to the protruding electrode of the semiconductor device on the substrate;
The conductive metal layer is protected by an insulating protective film, and electroplating is performed on the formed through hole using the conductive metal layer as a seed layer, and one protruding electrode of the semiconductor device is applied. Forming the metal bumps made of at least three hemispherical metals;
The insulating protective film that protects the conductive metal layer is removed, a resist pattern is newly formed on the conductive metal layer, and patterning is performed by etching using the resist pattern as a mask. Forming a metal pad electrically connected to the metal bump made of the above hemispherical metal;
A method for producing a probe card, comprising a step of removing the resist pattern. A probe card used to inspect a semiconductor device having a plurality of protruding electrodes or a semiconductor wafer on which a plurality of the semiconductor devices are formed, and is electrically connected to each protruding electrode of the semiconductor device on a substrate. A method of manufacturing a probe card comprising a metal bump,
Forming a conductive metal layer on one surface of the substrate;
A line connecting the centers of at least two or more through-holes to one protruding electrode at a position corresponding to the protruding electrode of the semiconductor device on the substrate is 90 degrees between two adjacent protruding electrodes. Forming to have an angle;
The conductive metal layer is protected by an insulating protective film, and electroplating is performed on the formed through-hole using the conductive metal layer as a seed layer, to one protruding electrode of the semiconductor device A step of forming the metal bumps made of at least two or more hemispherical metals, and a line connecting the centers of two hemispherical metals corresponding to two adjacent protruding electrodes having an angle of 90 degrees;
The insulating protective film that protects the conductive metal layer is removed, a resist pattern is newly formed on the conductive metal layer, and patterning is performed by etching using the resist pattern as a mask. Forming a metal pad electrically connected to the metal bump made of the above hemispherical metal;
A method for producing a probe card, comprising a step of removing the resist pattern. 9. The step of forming the metal bump includes a step of forming the hemispherical bump and a step of forming a metal layer having a concavo-convex structure on the surface of the hemispherical bump. A method for manufacturing the probe card according to claim 9. 11. The method according to claim 8, wherein in the step of forming the through hole, the interval between the through holes is set to be less than twice the height of the hemispherical metal forming the metal bump. A method for manufacturing the probe card according to the item. 11. The method according to claim 8, wherein in the step of forming the through hole, the interval between the through holes is set to be twice or more the height of the hemispherical metal forming the metal bump. A method for manufacturing the probe card according to the item.

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