JP2005209852A5 - - Google Patents

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JP2005209852A5
JP2005209852A5 JP2004014224A JP2004014224A JP2005209852A5 JP 2005209852 A5 JP2005209852 A5 JP 2005209852A5 JP 2004014224 A JP2004014224 A JP 2004014224A JP 2004014224 A JP2004014224 A JP 2004014224A JP 2005209852 A5 JP2005209852 A5 JP 2005209852A5
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Japan
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light emitting
light
semiconductor
emitting device
emitting element
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JP2004014224A
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JP2005209852A (en
JP4622253B2 (en
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Priority claimed from JP2004014224A external-priority patent/JP4622253B2/en
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Publication of JP2005209852A5 publication Critical patent/JP2005209852A5/ja
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透光性基板の一方の主面上に半導体層が積層されてなる半導体発光素子と、前記半導体発光素子の光出射面を覆い前記半導体発光素子が発光する第１の光の一部を吸収してその第１の光とは異なる波長の第２の光を発光する蛍光体を含む蛍光体層とを備え、前記蛍光体に吸収された一部を除く第１の光と、前記第２の光とが混合された混色光を出射する発光デバイスにおいて、
前記半導体発光素子の側面が遮光膜によって覆われたことを特徴とする発光デバイス。 Absorbs a semiconductor light emitting element comprising a semiconductor layer is laminated on one main surface of the translucent substrate, a portion of the first light the semiconductor light emitting element covering the light emitting surface of the semiconductor light emitting element emits light A phosphor layer including a phosphor that emits second light having a wavelength different from that of the first light, the first light excluding a part absorbed by the phosphor, and the second light In a light emitting device that emits mixed color light mixed with light,
A light emitting device, wherein a side surface of the semiconductor light emitting element is covered with a light shielding film. 前記遮光膜は、半導体発光素子で発光した光を反射させる反射膜である請求項１記載の発光デバイス。   The light-emitting device according to claim 1, wherein the light-shielding film is a reflective film that reflects light emitted from the semiconductor light-emitting element. 前記蛍光体層は、発光素子の光出射面の主面の厚さが、発光素子の側面の厚さと異なる請求項１又は２記載の発光デバイス。The light emitting device according to claim 1, wherein the phosphor layer has a thickness of a main surface of a light emitting surface of the light emitting element different from a thickness of a side surface of the light emitting element. 前記透光性基板の他方の主面を、前記半導体発光素子の光出射面とした請求項１〜３のいずれか１つに記載の発光デバイス。 The light emitting device according to any one of claims 1 to 3 , wherein the other main surface of the translucent substrate is a light emitting surface of the semiconductor light emitting element. 前記透光性基板の他方の主面上に設けられた蛍光体の厚さが略一定である請求項４記載の発光デバイス。The light-emitting device according to claim 4, wherein the thickness of the phosphor provided on the other main surface of the translucent substrate is substantially constant. 前記半導体発光素子がサブマウント上に実装され、前記サブマウント上に設けられた配線電極に前記半導体発光素子が導通している請求項４又は５記載の発光デバイス。The light emitting device according to claim 4 or 5, wherein the semiconductor light emitting element is mounted on a submount, and the semiconductor light emitting element is electrically connected to a wiring electrode provided on the submount. 前記遮光膜は、Ａｌ又はＡｇからなる金属膜である請求項１〜４のうちのいずれか１つに記載の発光デバイス。   The light-emitting device according to claim 1, wherein the light shielding film is a metal film made of Al or Ag. 透光性基板の一方の主面上に半導体層が積層されてなる半導体発光素子と、前記半導体発光素子の光出射面を覆い前記半導体発光素子が発光する第１の光の一部を吸収してその第１の光とは異なる波長の第２の光を発光する蛍光体を含む蛍光体層とを備え、前記蛍光体に吸収された一部を除く第１の光と、前記第２の光とが混合された混色光を出射する発光デバイスの製造方法において、A semiconductor light emitting device in which a semiconductor layer is laminated on one main surface of a light transmissive substrate, and a part of the first light emitted from the semiconductor light emitting device that covers the light emitting surface of the semiconductor light emitting device. A phosphor layer including a phosphor that emits a second light having a wavelength different from that of the first light, the first light excluding a part absorbed by the phosphor, and the second light In a method for manufacturing a light emitting device that emits mixed color light mixed with light,
前記半導体発光素子の実装面に対向して粘着シートに複数の発光素子を配置し、前記複数の半導体発光素子の側面及び光出射面となる発光素子の透光性基板の他方の主面上に、遮光膜材料層を形成する工程と、  A plurality of light emitting elements are arranged on an adhesive sheet so as to face the mounting surface of the semiconductor light emitting elements, and the side surfaces of the plurality of semiconductor light emitting elements and the other main surface of the translucent substrate of the light emitting elements to be the light emitting surfaces Forming a light shielding film material layer;
前記複数配置された発光素子を研磨して、前記透光性基板の他方の主面上の遮光膜を除去する工程と、  Polishing the plurality of light-emitting elements arranged to remove a light shielding film on the other main surface of the translucent substrate;
前記半導体発光素子をサブマウントに実装して、前記半導体発光素子の光出射面に蛍光体層を形成する工程と、を有する発光デバイスの製造方法。  Mounting the semiconductor light emitting element on a submount, and forming a phosphor layer on a light emitting surface of the semiconductor light emitting element. 前記蛍光体層の形成工程において、前記半導体発光素子を、前記サブマウントに設けられた配線電極に、電気的に導通させて実装する請求項８記載の発光デバイスの製造方法。  The method for manufacturing a light emitting device according to claim 8, wherein in the step of forming the phosphor layer, the semiconductor light emitting element is mounted in electrical conduction with a wiring electrode provided on the submount.
JP2004014224A 2004-01-22 2004-01-22 Light emitting device and manufacturing method thereof Expired - Fee Related JP4622253B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004014224A JP4622253B2 (en) 2004-01-22 2004-01-22 Light emitting device and manufacturing method thereof

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JP2004014224A JP4622253B2 (en) 2004-01-22 2004-01-22 Light emitting device and manufacturing method thereof

Publications (3)

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JP2005209852A JP2005209852A (en) 2005-08-04
JP2005209852A5 true JP2005209852A5 (en) 2007-02-22
JP4622253B2 JP4622253B2 (en) 2011-02-02

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US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages

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WO2010077226A1 (en) * 2008-12-30 2010-07-08 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
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US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
JP2011071272A (en) 2009-09-25 2011-04-07 Toshiba Corp Semiconductor light-emitting device and method for manufacturing the same
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US9142734B2 (en) 2003-02-26 2015-09-22 Cree, Inc. Composite white light source and method for fabricating
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages

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