JP2005166937A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP2005166937A
JP2005166937A JP2003403473A JP2003403473A JP2005166937A JP 2005166937 A JP2005166937 A JP 2005166937A JP 2003403473 A JP2003403473 A JP 2003403473A JP 2003403473 A JP2003403473 A JP 2003403473A JP 2005166937 A JP2005166937 A JP 2005166937A
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Prior art keywords
substrate
light emitting
emitting device
light
led element
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Japanese (ja)
Inventor
Ryoichi Toumon
領一 東門
Mitsuhiro Inoue
光宏 井上
Minoru Hirose
実 廣瀬
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2003403473A priority Critical patent/JP2005166937A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device in which, even when an LED element which generates a large amount of heat is used, the generated heat can easily be radiated outside of the light emitting device. <P>SOLUTION: The light emitting device 10 comprises an LED element 13, an insulating ceramic substrate 11a which mounts the LED element 13 and has a wiring for supplying electricity to the LED element 13, a ceramic substrate 11a which is integrally formed with the ceramic substrate 11a and has a reflection face which reflects a light emitted from the LED element 13, and a reflector 12 composed of insulating ceramics of the same kind. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、発光装置に関し、特に、多量の熱を発生する可能性がある発光素子とリフレクタ部の反射面を十分に近接して配置できるようにした発光装置に関する。   The present invention relates to a light emitting device, and more particularly, to a light emitting device in which a light emitting element capable of generating a large amount of heat and a reflecting surface of a reflector portion can be disposed sufficiently close to each other.

ＬＥＤ（light-Emitting Diode：発光ダイオード）を光源とする発光装置の代表的な構造として、ＬＥＤ素子及び電極を有したポリアミドからなる枠とその枠内に配置されたＬＥＤ素子を透光性を有する封止材料で覆うものがある。   As a typical structure of a light-emitting device using an LED (light-emitting diode) as a light source, a frame made of polyamide having LED elements and electrodes and an LED element arranged in the frame have translucency Some are covered with a sealing material.

ＬＥＤ素子を樹脂製の枠体内に封止樹脂で封止することにより、発光装置の設計自由度や生産性に優れる反面、ＬＥＤ素子から放射される熱が十分に発光装置内から放出できず、電気エネルギーが光エネルギーに変換できず、発光装置の発光効率を低下させることが問題となる。
近年、高出力のＬＥＤの開発が進められており、すでに数ワットの大出力タイプも製品化されている。ＬＥＤは発熱の少ないことが特徴であるが、高出力（高輝度）タイプのＬＥＤ素子は大電流が流れるため、無視できないレベルの発熱が生じる。
特開平９−２８３８０３号公報 このため発光装置の基板の材料としてセラミックスを用いた発光装置がある（例えば、特許文献１参照。）。 By sealing the LED element with a sealing resin inside the resin frame, the design freedom and productivity of the light emitting device are excellent, but the heat radiated from the LED element cannot be released sufficiently from the light emitting device, Since electric energy cannot be converted into light energy, there is a problem that the light emission efficiency of the light emitting device is lowered.
In recent years, high-power LEDs have been developed, and a high-power type of several watts has already been commercialized. LEDs are characterized by low heat generation, but high power (high brightness) type LED elements generate a large amount of current, and therefore generate heat that cannot be ignored.
For this reason, there is a light emitting device using ceramics as a material for a substrate of the light emitting device (for example, see Patent Document 1).

しかしながら、基板をセラミックスとしても高輝度のLEDを得るにはリフレクタ部を形成する必要があった。樹脂などからなるリフレクタ部を基板に後から張り合わせることができるが、材料の熱膨張の差などから、クラックやはがれの恐れがあった。   However, even if the substrate is made of ceramics, it is necessary to form a reflector portion in order to obtain a high-brightness LED. A reflector made of resin or the like can be attached to the substrate later, but there is a risk of cracking or peeling due to the difference in thermal expansion of the material.

従って、本発明の目的は、発光素子から多量の発熱が生じた場合でも、リフレクタと基板の熱応力に起因するクラックを防止できるようにした発光装置を提供することにある。   Accordingly, an object of the present invention is to provide a light emitting device capable of preventing cracks due to thermal stresses of a reflector and a substrate even when a large amount of heat is generated from the light emitting element.

本発明は、上記の目的を達成するため、発光素子と 前記発光素子を搭載し、発光素子に電気を供給する配線を有した絶縁性のセラミックス基板と、 前記基板に一体的に形成され、前記発光素子から発せられる光を反射する反射面を有した前記基板と同種の絶縁性のセラミックスからなるリフレクタ部からなる発光装置。   In order to achieve the above object, the present invention provides a light emitting element, an insulating ceramic substrate having the light emitting element mounted thereon and a wiring for supplying electricity to the light emitting element, integrally formed on the substrate, A light emitting device comprising a reflector portion made of an insulating ceramic of the same type as the substrate having a reflecting surface for reflecting light emitted from a light emitting element.

前記基板および前記リフレクタ部は窒化アルミニウムからなるセラミックスからなることが好ましい。   The substrate and the reflector portion are preferably made of ceramics made of aluminum nitride.

前記基板内部に設けられた前期配線はタングステンからなり、前記配線の前記発光素子が搭載される部位には、タングステン上に金層が形成されていることが好ましい。
また、前期配線はタングステン層と金層の間にバリアメタル層として、少なくとも一種類以上の異なる金属層を介する積層構造として形成しても良い。 It is preferable that the previous wiring provided in the substrate is made of tungsten, and a gold layer is formed on the tungsten at a portion of the wiring where the light emitting element is mounted.
Further, the initial wiring may be formed as a barrier metal layer between the tungsten layer and the gold layer as a laminated structure with at least one or more different metal layers interposed therebetween.

前記基板の前記発光素子は、前記基板の前記金層上にフリップチップ搭載されていることが好ましい。   The light emitting element of the substrate is preferably flip-chip mounted on the gold layer of the substrate.

前記発光素子は、蛍光体を含有した透明な材料で封止されていても良い。   The light emitting element may be sealed with a transparent material containing a phosphor.

本発明の発光装置によれば、絶縁性のセラミックス基板と基板と同種の絶縁性のセラミックスからなるリフレクタ部としたことにより、熱膨脹に起因する基板とリフレクタ部のクラックまたは剥離の発生を防止することができる。   According to the light emitting device of the present invention, the insulating ceramic substrate and the reflector portion made of the same kind of insulating ceramic as the substrate are used to prevent the occurrence of cracks or peeling between the substrate and the reflector portion due to thermal expansion. Can do.

図１は、本発明の第１の実施の形態に係る発光装置の構成を示す断面図で、図２は、その正面図である。この発光装置１０は、給電部材としての基板部１１と、この基板部１１の上面に搭載されたリフレクタ部１２と、基板部１１とリフレクタ１２部とで形成されている凹部内に配置されたＬＥＤ素子１３と、ＬＥＤ素子１３を覆うように封止された封止部材１４とを備えて構成される。   FIG. 1 is a cross-sectional view showing a configuration of a light emitting device according to a first embodiment of the present invention, and FIG. 2 is a front view thereof. The light emitting device 10 includes a substrate unit 11 as a power supply member, a reflector unit 12 mounted on the upper surface of the substrate unit 11, and an LED disposed in a recess formed by the substrate unit 11 and the reflector 12 unit. An element 13 and a sealing member 14 sealed so as to cover the LED element 13 are provided.

基板部１１は、窒化アルミニウムからなるセラミックス基板１１ａ（絶縁性基板）と、このセラミック基板１１ａの上面に所定のパターンで形成されたタングステンからなる配線層１１ｂ，１１ｃと、セラミック基板１１ａの下面に所定のパターンで形成されたタングステンからなる配線層１１ｄ，１１ｅと、配線層１１ｃの表面に被覆されたＮｉメッキ膜上のＡｕメッキ膜１１ｆと、配線層１１ｄの表面に被覆されたＮｉメッキ膜上のＡｕメッキ膜１１ｇと、配線層１１ｄの表面に被覆されたＮｉメッキ膜上のＡｕメッキ膜１１ｈと、配線層１１ｅの表面に被覆されたＮｉメッキ膜上のＡｕメッキ膜１１ｉと、配線層１１ｂと配線層１１ｄを接続するタングステンからなるスルーホール１１ｊと、配線層１１ｃと配線層１１ｅを接続するタングステンからなるスルーホール１１ｋとを備えている。   The substrate portion 11 includes a ceramic substrate 11a (insulating substrate) made of aluminum nitride, wiring layers 11b and 11c made of tungsten formed in a predetermined pattern on the upper surface of the ceramic substrate 11a, and a predetermined surface on the lower surface of the ceramic substrate 11a. The wiring layers 11d and 11e made of tungsten having the above pattern, the Au plating film 11f on the Ni plating film coated on the surface of the wiring layer 11c, and the Ni plating film coated on the surface of the wiring layer 11d Au plating film 11g, Au plating film 11h on Ni plating film coated on the surface of wiring layer 11d, Au plating film 11i on Ni plating film coated on the surface of wiring layer 11e, wiring layer 11b A through hole 11j made of tungsten for connecting the wiring layer 11d, and a hole for connecting the wiring layer 11c and the wiring layer 11e. And a through-hole 11k consisting Gusuten.

配線層１１ｂ，１１ｃ，１１ｄ，１１ｅは、電源を供給するための電極として機能する。また、Ａｕメッキ膜１１ｆ，１１ｇ，１１ｈ，１１ｉは、接続性、導電性、及び耐腐食性を向上させるために設けられている。なお、基板部１１は、ＬＥＤ素子１２の搭載の前に、配線層１１ｂ〜１１ｅ、Ａｕメッキ膜１１ｆ，１１ｇ，１１ｈ，１１ｉ、及びスルーホール１１ｊ，１１ｋは、予めセラミック基板１１ａに形成しておく必要がある。   The wiring layers 11b, 11c, 11d, and 11e function as electrodes for supplying power. Further, the Au plating films 11f, 11g, 11h, and 11i are provided in order to improve connectivity, conductivity, and corrosion resistance. In addition, before the LED element 12 is mounted on the substrate unit 11, the wiring layers 11b to 11e, the Au plating films 11f, 11g, 11h, and 11i, and the through holes 11j and 11k are formed in the ceramic substrate 11a in advance. There is a need.

リフレクタ部１２は、窒化アルミニウムからなるセラミックスで形成されており、斜面からなるリフレクタ面１２ａ，１２ｂ，１２ｃ，１２ｄを４面有しており、これらのリフレクタ面１２ａ，１２ｂ，１２ｃ，１２ｄ表面には、アルミを蒸着した反射層１２ｅ，１２ｆ，１２ｇ，１２ｈが設けられている。   The reflector part 12 is made of ceramics made of aluminum nitride, and has four reflector surfaces 12a, 12b, 12c, 12d made of inclined surfaces. Reflective layers 12e, 12f, 12g, and 12h on which aluminum is deposited are provided.

あらかじめタングステンで配線した焼成前の基板１１と焼成前のリフレクタ部１２を準備し、基板１１とリフレクタ部１２を張り合わせて焼成し一体化する。その後、Ｎｉメッキ膜を形成した後Ａｕメッキ膜１１ｆ，１１ｇ，１１ｈ，１１ｉを形成する。その後、配線部にレジスト加工した後、リフレクタ面１２ａ，１２ｂ，１２ｃ，１２ｄの表面にアルミ蒸着を行い反射層１２ｅ，１２ｆ，１２ｇ，１２ｈを形成し、その後レジストを取り除いている。   An unfired substrate 11 and an unfired reflector portion 12 wired in advance with tungsten are prepared, and the substrate 11 and the reflector portion 12 are bonded together and fired to be integrated. Then, after forming a Ni plating film, Au plating films 11f, 11g, 11h, and 11i are formed. Thereafter, after the resist processing is performed on the wiring portion, aluminum is deposited on the surfaces of the reflector surfaces 12a, 12b, 12c, and 12d to form the reflective layers 12e, 12f, 12g, and 12h, and then the resist is removed.

ＬＥＤ素子１３は、サファイヤ基板上に形成したＧａＮ系の青色ＬＥＤを用いており、そのチップサイズは、０．３×０．３ｍｍ（標準サイズ）、１×１ｍｍ（ラージサイズ）等である。封止部材１４には、ＹＡＧ系などの蛍光材料を有したシリコーン樹脂が用いられる。   The LED element 13 uses a GaN blue LED formed on a sapphire substrate, and its chip size is 0.3 × 0.3 mm (standard size), 1 × 1 mm (large size), or the like. For the sealing member 14, a silicone resin having a fluorescent material such as YAG is used.

以下に、発光装置１０の組み立てについて説明する。   Hereinafter, the assembly of the light emitting device 10 will be described.

まず、基板部１１の配線層１１ｂ，１１ｃ上にＬＥＤ素子１３を位置決めして、配線層１１ｂとバンプ２１、及び配線層１１ｄとバンプ２２とをそれぞれ溶着する。   First, the LED element 13 is positioned on the wiring layers 11b and 11c of the substrate part 11, and the wiring layer 11b and the bump 21 and the wiring layer 11d and the bump 22 are welded, respectively.

次に、液状のシリコーン樹脂材と蛍光体を混合した液体をＬＥＤ素子１３の中心部の真上から滴下して、ＬＥＤ素子１３の上面及び側面の全体にコーティングすることにより封止部材１４を形成する。なお、蛍光体を混合したシリコーン樹脂を下層に、上層は、蛍光体を含有しない透明なシリコーン樹脂の２層とした構成としても良い。   Next, a liquid in which a liquid silicone resin material and a phosphor are mixed is dropped from directly above the center of the LED element 13 to coat the entire upper surface and side surfaces of the LED element 13 to form the sealing member 14. To do. In addition, it is good also as a structure which made the silicone resin which mixed the fluorescent substance into the lower layer, and made the upper layer into two layers of the transparent silicone resin which does not contain fluorescent substance.

次に、封止部材１４を形成された状態で基板部１１、リフレクタ部１２およびＬＥＤ素子１３を１５０℃程度の温度雰囲気に置き、封止部材１４を硬化させる。   Next, with the sealing member 14 formed, the substrate part 11, the reflector part 12, and the LED element 13 are placed in a temperature atmosphere of about 150 ° C., and the sealing member 14 is cured.

上記構成の発光装置１０において、例えば、配線層１１ｄがＬＥＤ素子１３のアノード側であるとすると、配線層１１ｄに直流電源（図示せず）のプラス側が接続され、配線層１１ｅにはマイナス側が接続される。ＬＥＤ素子１３に対して、ｐ側電極及びｎ側電極に電気的に接続されたバンプ２１、２２を介して順方向の電圧を印加すると、ＬＥＤ素子１３内の発光層内においてホール及びエレクトロンのキャリア再結合が発生して発光し、出力光がサファイヤ基板を介してＬＥＤ素子１３の外部へ放射される。この光の殆どは封止部材１４内を透過して封止部材１４の外へ出光し、一部は内面反射をして封止部材１４の外へ出光する。   In the light emitting device 10 having the above configuration, for example, if the wiring layer 11d is on the anode side of the LED element 13, the plus side of a DC power source (not shown) is connected to the wiring layer 11d, and the minus side is connected to the wiring layer 11e. Is done. When a forward voltage is applied to the LED element 13 via the bumps 21 and 22 electrically connected to the p-side electrode and the n-side electrode, holes and electron carriers are formed in the light emitting layer in the LED element 13. Recombination occurs to emit light, and output light is emitted outside the LED element 13 through the sapphire substrate. Most of this light is transmitted through the sealing member 14 and exits from the sealing member 14, and part of the light is reflected from the inner surface and exits from the sealing member 14.

上記した第１の実施の形態によると、以下の効果が得られる。
（１）窒化アルミニウムからなるセラミックスで基板部とリフレクタ部を一体に形成したので、ＬＥＤ素子からの熱を効率よく発光装置外に取り除くことができ、効率よく電流をＬＥＤ素子に注入でき、発光効率を向上できる。
（２）セラミックス基板部にタングステンで配線しているため、セラミックス焼成時の熱に配線が耐えることができ、また、セラミックス内の配線が容易に得られる。
（３）ＬＥＤ素子を基板部にフリップチップ実装しているため、反射層を有したリフレクタ面をＬＥＤ素子に近づけることができる。このため、蛍光体含有の封止樹脂をＬＥＤ素子周囲に小さいサイズとすることができるため、発光強度の大きな発光装置を得ることができる。
（４）封止樹脂をシリコーン樹脂、基板部とリフレクタ部を窒化アルミニウムからなるセラミックスという耐熱性がある材料で構成しているので、外部からの熱に強い発光装置が得られる。 According to the first embodiment described above, the following effects are obtained.
(1) Since the substrate portion and the reflector portion are integrally formed of ceramics made of aluminum nitride, heat from the LED element can be efficiently removed outside the light emitting device, current can be efficiently injected into the LED element, and light emission efficiency Can be improved.
(2) Since the wiring is made of tungsten on the ceramic substrate portion, the wiring can withstand the heat at the time of firing the ceramic, and the wiring in the ceramic can be easily obtained.
(3) Since the LED element is flip-chip mounted on the substrate portion, the reflector surface having the reflective layer can be brought close to the LED element. For this reason, since the phosphor-containing sealing resin can be reduced in size around the LED element, a light-emitting device with high emission intensity can be obtained.
(4) Since the sealing resin is made of a heat-resistant material such as a silicone resin and the substrate portion and the reflector portion are made of ceramics made of aluminum nitride, a light emitting device that is resistant to heat from the outside can be obtained.

また、基板部１１とリフレクタ部１２を窒化アルミニウムからなるセラミックスに限定されるものではなく、酸化アルミニウムセラミックス、炭化シリコンセラミックスなどのセラミックスが使用できる。   Further, the substrate portion 11 and the reflector portion 12 are not limited to ceramics made of aluminum nitride, and ceramics such as aluminum oxide ceramics and silicon carbide ceramics can be used.

更に、封止部材１４は、シリコーン樹脂に限定されるものではなく、エポキシ樹脂などの他の透明樹脂や、ガラスなどの透明無機材料を用いても良い。なお封止部材にガラスを用いると、熱膨張率が樹脂よりもセラミックスに近いため、基板部１１とリフレクタ部１２との剥離が防止でき、有機物が材料に用いられていないため、熱などに強い耐久性に優れる発光装置とすることができる。   Furthermore, the sealing member 14 is not limited to a silicone resin, and other transparent resins such as an epoxy resin or a transparent inorganic material such as glass may be used. If glass is used for the sealing member, the coefficient of thermal expansion is closer to that of ceramics than resin, so that peeling between the substrate portion 11 and the reflector portion 12 can be prevented, and since organic materials are not used as the material, it is resistant to heat and the like. A light emitting device having excellent durability can be obtained.

また、封止部材１４には、蛍光体の分散性を向上させ、光の取り出しを向上させるために、拡散材などを含有させても良い。   Further, the sealing member 14 may contain a diffusing material or the like in order to improve the dispersibility of the phosphor and improve the light extraction.

本発明の第１の実施の形態に係る発光装置の構成を示す断面図である。It is sectional drawing which shows the structure of the light-emitting device which concerns on the 1st Embodiment of this invention. 第１の実施の形態に係る発光装置の正面図である。It is a front view of the light-emitting device concerning a 1st embodiment.

符号の説明Explanation of symbols

１０ 発光装置
１１ 基板部
１１ａ セラミック基板
１１ｂ，１１ｃ，１１ｄ，１１ｅ 配線層
１１ｆ，１１ｇ，１１ｈ，１１ｉ Ａｕメッキ膜
１１ｊ，１１ｋ スルーホール
１２ リフレクタ部
１２ｅ，１２ｆ，１２ｇ，１２ｈ 反射層
１３ ＬＥＤ素子
１４ 封止部材
２１，２２ バンプ DESCRIPTION OF SYMBOLS 10 Light-emitting device 11 Substrate part 11a Ceramic substrate 11b, 11c, 11d, 11e Wiring layer 11f, 11g, 11h, 11i Au plating film 11j, 11k Through hole 12 Reflector part 12e, 12f, 12g, 12h Reflective layer 13 LED element 14 Sealing Stop member 21, 22 Bump

Claims (6)

発光素子と
前記発光素子を搭載し、発光素子に電気を供給する配線を有した絶縁性のセラミックス基板と、
前記基板に一体的に形成され、前記発光素子から発せられる光を反射する反射面を有した前記基板と同種の絶縁性のセラミックスからなるリフレクタ部からなる発光装置。 An insulating ceramic substrate having a light-emitting element and a wiring that carries the light-emitting element and supplies electricity to the light-emitting element;
A light-emitting device comprising a reflector portion made of an insulating ceramic of the same type as that of the substrate, which is formed integrally with the substrate and has a reflection surface for reflecting light emitted from the light-emitting element. 前記基板および前記リフレクタ部は窒化アルミニウムからなるセラミックスからなることを特徴とする請求項１記載の発光装置。   The light emitting device according to claim 1, wherein the substrate and the reflector portion are made of ceramics made of aluminum nitride. 前記基板内部にに設けられた前期配線はタングステンからなり、前記配線の前記発光素子が搭載される部位には、タングステン上に金層が形成されていることを特徴とする請求項１又は２記載の発光装置。   3. The previous wiring provided in the substrate is made of tungsten, and a gold layer is formed on tungsten at a portion of the wiring where the light emitting element is mounted. Light-emitting device. 前記基板内部にに設けられた前期配線は、タングステン層と金層の間に少なくとも一種類の異なる金属膜を有する積層構造からなることを特徴とする請求項１又は２記載の発光装置。   3. The light emitting device according to claim 1, wherein the previous wiring provided in the substrate has a laminated structure having at least one different metal film between the tungsten layer and the gold layer. 前記基板の前記発光素子は、前記基板の前記金層上にフリップチップ搭載されていることを特徴とする請求項１から４のいずれかに記載の発光装置。   5. The light emitting device according to claim 1, wherein the light emitting element of the substrate is flip-chip mounted on the gold layer of the substrate. 前記発光素子は、蛍光体を含有した透明な材料で封止されていることを特徴とする請求項１から５のいずれかに記載の発光装置。
The light emitting device according to claim 1, wherein the light emitting element is sealed with a transparent material containing a phosphor.
JP2003403473A 2003-12-02 2003-12-02 Light emitting device Pending JP2005166937A (en)

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