JP2002353516A - Light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which has superior reliability and can emit light of high luminance. SOLUTION: The light-emitting device has a light-emitting element and a metal package, which has a recessed part where the light-emitting element is stored and at least one through-hole penetrated in the bottom surface of the recessed part along the thickness and also has a lead electrode inserted into the through-hole via an insulator; and the top surface of the recessed part has a collar part in the outward direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a backlight light source,
The present invention relates to a light emitting device used for various light sources such as a display and a lighting device and an optical sensor, and particularly relates to a light emitting device having excellent reliability.

[0002]

2. Description of the Related Art Today, high-brightness, high-output semiconductor light-emitting elements and small-sized and high-sensitivity light-emitting devices have been developed and used in various fields. Such light emitting devices are used for light sources of optical printer heads, liquid crystal backlight sources, light sources of various meters, various reading sensors, and the like by utilizing features such as small size, low power consumption, and light weight.

FIG. 13 shows an example of such a light emitting device.
The light emitting device as shown in FIG. A plastic package 5 into which the lead electrode 2 is inserted and integrally molded is used. The package has a recess for accommodating a light emitting element. The lead electrode 2 exposed from the bottom of the concave portion
An LED chip 1 as a light emitting element is die-bonded thereon, and each electrode of the LED chip is electrically connected to a lead electrode 2 provided on a package by a gold wire 4 or the like. The LED chip disposed in the recess is sealed with a translucent mold resin 9 or the like. Thus, the LED chips and wires arranged inside the package are protected from external environment such as moisture and external force, and a highly reliable light emitting device can be obtained.

[0004] However, such light emitting devices have begun to be used under more severe environmental conditions due to the expansion of application fields. In a light emitting device used for an aircraft or a vehicle, for example, the temperature may change to −20 or lower and + 80 ° C. or higher depending on the outside air temperature. In addition, there is vibration at the same time as the external pressure, thermal shock, and the like. In such a case, the LED chip peels off from the die bond resin due to expansion or contraction of the mold resin or the like, and the intensity and directional characteristics of the emitted light change. In a severe case, there is a case where the wire is broken and no light is emitted.

[0005] Further, the light emitting element generates heat due to power consumption. In the light emitting device having the above configuration, heat generated from the light emitting element can be released to the substrate via the lead electrode. However, the heat radiation effect is not sufficiently satisfactory. If a high current is applied to improve the output of the light emitting device, the temperature of the light emitting device rises due to insufficient heat radiation by the package, and the operating speed and ambient temperature of the device are increased. Causes deterioration of the resin existing in the resin.

On the other hand, conventionally, a can type package has been used as a highly reliable package. For example, as shown in FIG. 14, a metal base 10 having a convex shape, and a lead hermetically sealed in a through hole formed in the thickness direction of the metal base 10 via an insulator 3 such as glass. A semiconductor device stem having the electrode 2 is used. A light emitting element is electrically connected to the upper surface of such a stem. A can 11 with a window having a flange at the bottom
Is hermetically sealed with a seal.

In the light emitting device having such a configuration, since the package is made of metal and the inside is hollow,
It has extremely high reliability compared to the case where a resin is used as a constituent material, and is excellent in prevention of wire heat insulation, moisture resistance, heat resistance, and heat radiation. For this reason, it is possible to increase the amount of current flowing through the light emitting device and improve the output.

However, in recent years, downsizing and thinning of light emitting devices have been demanded in order to cope with high-density mounting, and accordingly, surface mounting type light emitting devices have been required instead of lead type light emitting devices. ing. Therefore, when a surface-mounted light-emitting device in which the lead electrode portion is shortened with the above-described configuration is simply formed, the reliability tends to rapidly decrease after the mounting process.

[0009]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems and to provide a light emitting device having high reliability and capable of emitting light with high luminance.

[0010]

SUMMARY OF THE INVENTION Accordingly, the present invention provides a light emitting device having at least one through hole having a recess for accommodating the light emitting device and penetrating through the bottom surface of the recess in the thickness direction. A light emitting device comprising: a metal package in which a lead electrode is inserted into a hole via an insulator; wherein a top surface of the concave portion has a flange in an outward direction. Thus, a light emitting device that can emit light with high reliability and high luminance can be obtained.

In the lead electrode, the mounting surface is larger in area than the main surface. Thereby, the mountability is improved, and the degree of freedom of wiring of the mounting board is increased, which is preferable.
In addition, since the contact area between the lead electrode and the mounting substrate is increased, the heat dissipation is improved, and a light emitting device capable of emitting light with high output can be obtained.

Further, it is preferable that the side surface of the concave portion has a tapered shape, whereby the light extraction efficiency from the light emitting element is further improved and a light emitting device excellent in mass productivity can be obtained.

The light-transmitting sealing member for covering the light-emitting element is provided in the concave portion, and a part of the light from the light-emitting element is absorbed in the light-transmitting sealing member so as to have a different wavelength. Characterized by having a fluorescent substance capable of emitting light.

Since the metal package used in the present invention has excellent heat dissipation, it is possible to suppress the deterioration of the translucent sealing member, and to obtain a color conversion type having good light extraction efficiency and high reliability. A light emitting device is obtained.

Further, the metal package has an Ag plating layer on a surface of a substrate made of Kovar or iron. Since the substrate has high strength against stress, a thin light emitting device having excellent optical characteristics can be obtained with high yield. In addition, the Kovar has a similar coefficient of thermal expansion to that of the adjacent hard glass, and a light-emitting device that is well hermetically sealed can be obtained.

By providing an Ag plating layer on the surface, light reflectivity can be improved on the inner surface of the package concave portion, and adhesion to the light emitting element and the wire can be improved on the bottom surface of the package concave portion.

As described above, a thin metal package having high reliability and excellent light extraction efficiency can be obtained by the above combination.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 5 shows a light emitting device capable of emitting white light as a light emitting device according to an embodiment of the present invention.

The package 5 is made of metal and has a concave shape. The bottom surface of the recess has two through holes penetrating in the thickness direction, and the positive and negative lead electrodes 2 are inserted into the through holes via an insulator 3. LE, which is a light emitting element, is provided on the bottom surface of the concave portion of the package thus configured.
A D chip 1 is arranged, and each electrode of the LED chip is electrically connected to each lead electrode 2 by a wire 4.
In the present invention, the uppermost surface of the recess has a flange portion 12 in the outward direction.

The metal package 5 to which the LED chips are electrically connected as described above is hermetically sealed by a lid 6 having a light-transmitting window 7 so as to cover a concave portion of the package. Here, the LED is provided in the translucent window portion 7.
A fluorescent substance 8 capable of absorbing at least a part of light from the chip and emitting light of different wavelengths is contained.
Hereinafter, each configuration of the embodiment of the present invention will be described in detail.
(Light-Emitting Element 1) In the present invention, the light-emitting element 1 is not particularly limited, but when a fluorescent substance is used, a semiconductor light-emitting element having a light-emitting layer capable of emitting a wavelength capable of exciting the fluorescent substance is preferable. As such a semiconductor light emitting device, ZnS
Various semiconductors such as e and GaN can be mentioned,
A nitride semiconductor capable of emitting a short wavelength light capable of efficiently exciting a fluorescent substance (In _X Al _Y Ga _1-XY N, 0 ≦ X, 0
.Ltoreq.Y, X + Y.ltoreq.1). Examples of the semiconductor structure include a homo structure, a hetero structure, and a double hetero structure having an MIS junction, a PIN junction, a pn junction, and the like. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Also, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed as a thin film in which a quantum effect occurs can be used.

When a nitride semiconductor is used, a material such as sapphire, spinel, SiC, Si, ZnO, or the like is suitably used for the semiconductor substrate. In order to form a nitride semiconductor having good crystallinity with high productivity, it is preferable to use a sapphire substrate. MOCVD on this sapphire substrate
A nitride semiconductor can be formed by a method or the like. A buffer layer of GaN, AlN, GaAIN or the like is formed on a sapphire substrate, and a nitride semiconductor having a pn junction is formed thereon.

As an example of a light emitting device having a pn junction using a nitride semiconductor, a first contact layer formed of n-type gallium nitride and a first clad formed of n-type aluminum / gallium nitride on a buffer layer Layer, an active layer formed of indium gallium nitride, a second cladding layer formed of p-type aluminum gallium nitride, and a double hetero structure in which a second contact layer formed of p-type gallium nitride is sequentially stacked. No.

The nitride semiconductor shows n-type conductivity without being doped with impurities. When a desired n-type nitride semiconductor is formed, for example, to improve luminous efficiency, it is preferable to appropriately introduce Si, Ge, Se, Te, C, or the like as an n-type dopant. On the other hand, when forming a p-type nitride semiconductor, Zn, Mg, Be, C
a, Sr, Ba and the like are doped. The nitride semiconductor has p
Since it is difficult to form a p-type only by doping the p-type dopant, it is preferable to reduce the resistance by heating in a furnace or irradiating plasma after introducing the p-type dopant. After electrode formation,
By cutting the semiconductor wafer into chips, a light emitting element made of a nitride semiconductor can be formed.

When the light emitting diode of the present invention emits white light, the light emitting wavelength of the light emitting element should be 400 nm or more and 530 nm or less in consideration of the complementary color relationship with the emission wavelength from the fluorescent substance and the deterioration of the light transmitting resin. Preferably 420n
m or more and 490 nm or less are more preferable. In order to further improve the excitation and emission efficiency of the light emitting element and the fluorescent substance, respectively, the thickness is more preferably 450 nm or more and 475 nm or less.

Since the package body of the present invention is made of only an inorganic metal, there is no possibility of deterioration due to ultraviolet rays. Therefore, the light emitting device of the present invention has 40
A light-emitting element having a main emission wavelength in an ultraviolet region shorter than 0 nm or a short wavelength region of visible light can be used. Further, by combining the light emitting element with a fluorescent substance capable of absorbing a part of the wavelength and emitting another wavelength, a color conversion type light emitting device with less color unevenness can be obtained. Since such a color conversion type light emitting device basically uses only light emitted from a fluorescent substance, color adjustment can be performed relatively easily. In particular, when using a light-emitting element having a wavelength in the ultraviolet region, compared to the case of using a semiconductor light-emitting element that emits visible light, it absorbs variations such as the wavelength of the semiconductor light-emitting element and only emits light from the fluorescent substance. Since the chromaticity can be determined, mass productivity can be improved. Here, when binding the fluorescent substance to the light emitting device, it is preferable to use a resin or inorganic glass which is relatively resistant to ultraviolet rays. (Metal Package 5) The metal package 5 used in the light emitting device of the present embodiment has a concave shape, and has two through holes penetrating in the thickness direction on the bottom surface of the concave portion. The positive and negative lead electrodes 2 are respectively inserted through. At least one of the lead electrodes may be inserted into the metal package and the insulator. As shown in FIG. 2, the other lead electrode may be fixed so as to conduct with the metal package. With this configuration, the insulator does not intervene from the light emitting element to the upper surface of one of the recesses in the package.
Heat radiation is improved, which is preferable.

Further, it is preferable that the metal package and the lead electrode are formed of the same material, so that when these are fixed via an insulating member, the insulating member is sealed well without breaking the insulating member. be able to. When the lead electrode and the metal package are fixed to each other with a conductive member, the adhesion at the metallized interface is improved.

Lead exposed from bottom of package recess
The area of the main surface of the electrode 2 depends on the miniaturization of the light emitting device and the wire box.
0.02mm²~ 0.2
mm ²Is preferred, more preferably 0.05 mm²~
0.15mm²It is. Also, facing the main surface of the lead electrode
The mounting surface has a larger area than the main surface.
And This allows the lead electrode to function as a leg of the light emitting device.
As a result, stable surface mounting becomes possible.
Also, since the contact area with the mounting board is increased, heat dissipation is improved.
Will be up. Lead electrodes of such a shape are, for example, columnar
Press the lead electrode formed on the mounting surface side
T-shape, divergent type, reverse taper type
Etc. can be formed.

The side surface of the concave portion of the metal package is preferably tapered. By providing the slope on the side surface in this manner, the light extraction efficiency of the light emitting element arranged on the bottom surface is improved. In addition, when releasing the molded package from the molding die, the package can be produced with good yield without applying extra stress to the molded package.

In particular, the metal package used in the light emitting device of the present invention is characterized in that the uppermost surface of the recess is a flange extending outward. The flange serves as a weld when the recess is hermetically sealed with a lid. That is, the metal package used in the light emitting device of the present invention is:
A weld with the lid is integrally formed in a flange shape from the upper surface of the package to the outside. By integrally forming the package body and the welded portion with the same material in this manner, Joule heat generated by seam welding can be radiated well. This is preferable because hermetically sealed without adversely affecting other components.

The flange is located at the uppermost surface of the recess. Although there is a possibility that the flange portion may sag downward due to heat at the time of welding, positioning the flange portion at the uppermost portion of the package away from the mounting surface as in the present invention enables satisfactory mounting without any problem. In comparison, if the flange, which is the welded portion, is on a line parallel to the package bottom surface, the flange may be dropped to the mounting surface line by welding.
The broken flange hinders the stable mounting of the light emitting device. Further, when there is a large temperature difference between the melting point of the package base material and the melting point of the plating layer, when the flange and the lid are seam-welded, a substance having a low melting point scatters around, and an insulating portion between the lead electrode and the package. It is considered that the adhesion causes insulation failure and adversely affects the operation characteristics. On the other hand, in the light emitting device of the present invention, the above-described problem can be avoided because the insulating portion and the flange portion are separated from each other.

As the material of the package, strong Kovar or iron can be preferably used. Thereby, a thin package can be formed. Kovar is an Fe-Ni-Co alloy and has a thermal expansion coefficient similar to that of low-melting glass used for an insulating member. As a result, a light-emitting device hermetically sealed with high accuracy can be obtained.
Preferably, a reflective layer is provided on the surface of the material of the package. The material of the reflective layer is not particularly limited as long as it reflects light from a light emitting element disposed in the package or a fluorescent substance used together. When the Ag plating is provided on the package surface as the reflection layer, the reflection and scattering rate of light of the package is improved, and the Ag layer becomes a brazing material for welding, and the adhesion between the light emitting element, the wire, and the lid and the package body is reduced. Improved and preferred. Furthermore, these effects are multiplied when the Ag layer is plated matt.

The thickness of the package is 0.3 mm
1.0 mm is preferable, and more preferably 0.5 mm
0.7 mm. If the thickness is less than 0.3 mm, cracks occur at the weld interface during seam welding with the lid, or the strength of the entire package is reduced. When the airtightness is incomplete as described above, moisture penetrates into the inside, and the wires and the light emitting element are corroded, thereby lowering the reliability. When the thickness is 1.0 mm or more, it is difficult for the pulse current to be transmitted to the welding interface, and the sealing may be incomplete. In addition, the size of the light emitting device increases and the cost increases. By configuring the metal package used in the present invention as described above, a highly reliable light emitting device can be obtained at low cost. (Lid 6) The lid 6 used in the present embodiment has a window 7 made of a light-transmitting portion at the center as a light emitting surface. In the lid, using a carbon sealing jig, a tablet-like glass serving as a window is arranged in the opening in a lid body having an opening for taking out light at the center, and the furnace is passed through. As a result, the glass and the lid main body are hermetically sealed and hermetically sealed.

It is preferable that the material of the lid has a thermal expansion coefficient similar to that of the light-transmitting members of the package body and the window. It is preferable that the surface of the lid material has a Ni plating layer because the lid material can be protected.

The shape of the lid is not particularly limited as long as it has a surface that can be in close contact with the flange of the package and can seal the recess of the package. As shown in FIG. 3, it is preferable to use a lid having a flat surface corresponding to the flange of the package and having a convex portion corresponding to the concave portion of the package, since the positioning between the package and the lid becomes easy and mass productivity is improved.

On the other hand, as shown in FIG. 2, a lid having a flat surface corresponding to the flange portion of the package, and having a central portion protruding from the flat surface, which is an edge, symmetrically with the package concave portion. When used, when providing a color conversion member inside the window portion of the lid, for example, when applying a fluorescent material-containing liquid resin, the fluorescent material-containing up to the flange joint surface that is a seam welded portion of the lid It is possible to prevent the liquid resin from flowing. Further, by setting the thickness of the color conversion member to be equal to or less than the thickness of the convex portion, the color conversion member can be inevitably prevented from coming into contact with another component, and a light emitting device can be obtained with high yield. Can be Further, when the window portion has a curved lens shape as shown in FIG. 8, the convergence of light becomes good, and a light emitting device having excellent directivity characteristics can be obtained. (Fluorescent substance 8) In the light emitting device of the present embodiment, the fluorescent substance 8 is contained in the window of the lid. Here, the fluorescent substance used in the present invention will be described in detail.

Fluorescence used in the light emitting device of this embodiment
The material is a semiconductor light-emitting layer with a nitride-based semiconductor as the light-emitting layer.
The light emitted from the element is excited to emit light of different wavelengths.
Yttrium aluminum activated by cerium that can emit light
It is based on a chromium oxide-based fluorescent substance. Ingredient
Physical yttrium / aluminum oxide fluorescent material
The YAlO₃: Ce, Y₃Al₅O₁₂Y: Ce
(YAG: Ce) or Y ₄Al₂O₉: Ce, and even this
And mixtures thereof. Yttrium aluminum
Ba, Sr, Mg, Ca, Zn
May be contained. In addition, Si
To suppress the crystal growth reaction and
The particles of the light substance can be aligned.

In the present specification, the yttrium / aluminum oxide-based fluorescent material activated by Ce is to be interpreted particularly broadly, and a part or the whole of yttrium is composed of Lu, Sc, La, Gd and Sm. At least one element selected from the group or a part or the whole of aluminum is replaced with Ba, Tl, Ga, I
The term “n” is used in a broad sense including a phosphor having a fluorescent action in which either or both are substituted.

More specifically, the general formula (Y _z G)
d _1-z ) ₃ Al ₅ O ₁₂ : Ce (where 0 <z ≦ 1), a photoluminescent phosphor represented by general formula (Re)
_{1-a Sm a) 3 Re} '5 O 12: Ce ( where, 0 ≦ a
<1, 0 ≦ b ≦ 1, Re is at least one selected from Y, Gd, La, and Sc; Re ′ is Al, Ga, I
at least one selected from n. ) Is a photoluminescent phosphor.

This fluorescent substance has a garnet structure,
Resistant to heat, light and moisture, and has a peak in the excitation spectrum of 45
It can be set to around 0 nm. Also, the emission peak is near 580 nm and has a broad emission spectrum extending down to 700 nm.

The photoluminescent phosphor contains Gd (gadolinium) in the crystal, so that 460
It is possible to increase the excitation light emission efficiency in a long wavelength region of not less than nm. Due to the increase in the Gd content, the emission peak wavelength shifts to a longer wavelength, and the entire emission wavelength shifts to the longer wavelength side.
That is, when a reddish luminescent color is required, it can be achieved by increasing the replacement amount of Gd. On the other hand, as Gd increases, the emission luminance of photoluminescence due to blue light tends to decrease. Further, Tb, Cu, Ag, Au, Fe, Cr, Nd, Dy, C
o, Ni, Ti, Eu and the like can be contained.

Moreover, in the yttrium-aluminum-garnet-based phosphor having a garnet structure, the emission wavelength is shifted to the shorter wavelength side by partially replacing Al with Ga. Further, by substituting a part of Y in the composition with Gd, the emission wavelength shifts to the longer wavelength side. When a part of Y is substituted with Gd, it is preferable that the substitution with Gd is less than 10% and the content (substitution) of Ce is 0.03 to 1.0. If the substitution with Gd is less than 20%, the green component is large and the red component is small, but by increasing the content of Ce, the red component can be supplemented and a desired color tone can be obtained without lowering the luminance. With such a composition, the temperature characteristics are improved and the reliability of the light emitting diode can be improved. Also, if a photoluminescent phosphor adjusted to have many red components is used,
It is possible to emit light of an intermediate color such as pink, so that a light emitting device having excellent color rendering properties can be formed.

Such a photoluminescent phosphor is
An oxide or a compound that easily becomes an oxide at a high temperature is used as a raw material for Y, Gd, Al, and Ce, and these are sufficiently mixed in a stoichiometric ratio to obtain a raw material. Or Y, Gd,
A coprecipitated oxide obtained by calcining a solution obtained by dissolving a rare earth element of Ce in an acid at a stoichiometric ratio with oxalic acid,
A mixed raw material is obtained by mixing with aluminum oxide. An appropriate amount of a fluoride such as barium fluoride or ammonium fluoride is mixed into the crucible as a flux, and the mixture is placed in a crucible.
Calcined in a temperature range of 0 to 1450 ° C. for 2 to 5 hours to obtain a calcined product, then ball-milled in water, washed,
It can be obtained by separating, drying and finally passing through a sieve.

In the light emitting device of the present invention, such a photoluminescent phosphor may be a mixture of two or more kinds of yttrium aluminum garnet phosphor activated with cerium and other phosphors.

On the other hand, the emission spectrum emitted from the light emitting element is in the ultraviolet region or visible light (for example, 4
20 nm or less), absorbs at least a part of the emission spectrum, emits an emission spectrum having two or more emission peaks, and uses a fluorescent substance whose emission spectrum is at least partly complementary to each other. Is preferred. Since the fluorescent substance has two or more emission spectrum peaks including the complementary color region, the color shift of the fluorescent substance itself is extremely small, the variation of the light emitting element is absorbed, and the color shift of the light emitting device can be suppressed. it can. In the emission spectrum having two or more peaks, it is preferable that the half-width of the emission peak on the short wavelength side is narrower than the half-width of the emission peak on the longer wavelength side. A light-emitting device that can be easily taken out and has excellent color rendering properties can be obtained. In addition, when another fluorescent substance having an emission peak between the two or more emission peaks is used together with the fluorescent substance, a light emitting device which can emit white light and emit a desired intermediate color with high luminance can be obtained. . Furthermore, if the intensity ratio of two or more emission spectra, at least a part of which is a complementary color, is adjusted depending on the composition, the human eye can be sensitively sensed even with a slight shift in the white area, but this allows fine adjustment. Becomes possible.

As a specific fluorescent substance, for example, an element represented by M containing at least one selected from Mg, Ca, Ba, Sr, and Zn, and at least Mn, Fe, C
An alkaline earth metal halogenapatite phosphor activated by Eu and having an element represented by M ′ containing one selected from r and Sn can be used, and a white system with good mass productivity can be obtained with high brightness. A light emitting device capable of emitting light is obtained. In particular,
The alkaline earth metal halogenapatite phosphor activated by Eu containing at least Mn and / or Cl is excellent in light resistance and environmental resistance. Further, the emission spectrum emitted from the nitride semiconductor can be efficiently absorbed. Further, the white region can emit light and the region can be adjusted by the composition. Further, it can emit yellow or red light with high luminance by absorbing a long wavelength ultraviolet region. Therefore, a light emitting device having excellent color rendering properties can be obtained. Needless to say, an alkaline earth metal chloroapatite phosphor is included as an example of the alkaline earth metal halogen apatite phosphor.

[0046] In the alkaline earth metal halide apatite phosphor, the general formula _{(M 1-x- y Eu x} M'y) 10 (P
O ₄ ) _{6 Cl 2} (where M is Mg,
M ′ has at least one selected from Ca, Ba, Sr, and Zn, and M ′ has at least one selected from Mn, Fe, Cr, and Sn. 0.0001 ≦ x ≦ 0.5,
0.0001 ≦ y ≦ 0.5. ) A light emitting device capable of emitting mixed light with good mass productivity can be obtained.

Further, in addition to the alkaline earth metal halogen apatite phosphor, BaMg ₂ Al ₁₆ O ₂₇ : E
u, (Sr, Ca, Ba) ₅ (PO ₄ ) ₃ Cl: Eu,
SrAl ₂ O ₄ : Eu, ZnS: Cu, Zn ₂ GeO ₄ : M
_{n, BaMg 2 Al 16 O 2} 7: Eu, Mn, Zn 2 G
eO ₄ : Mn, Y ₂ O ₂ S: Eu, La ₂ O ₂ S: E
When at least one kind of phosphor selected from u, Gd ₂ O ₂ S: Eu is contained, it is possible to adjust a more detailed color tone and obtain white light having high color rendering properties with a relatively simple structure. it can.

The phosphor can be obtained by the following method. A predetermined amount of a phosphate oxide of a constituent element or various compounds that can be converted into oxides by thermal decomposition and ammonium chloride are weighed and mixed in a ball mill or the like, and then placed in a crucible, and placed in a reducing atmosphere of N ₂ and H ₂ at 800. Firing at a temperature of from 1200C to 1200C for 3 to 7 hours. The obtained fired product is wet-ground, sieved, dehydrated, and dried to obtain an alkaline earth metal halogen apatite phosphor.

(M _1-xy Eu _x M′y) ₁₀ (PO ₄ ) as an alkaline earth metal halogen apatite phosphor
_When represented by _{6 Cl2} (where M is Mg, Ca, B
at least one selected from a, Sr, and Zn;
Is at least one selected from Mn, Fe, Cr, and Sn.
With seeds. 0.0001 ≦ x ≦ 0.5, 0.000
1 ≦ y ≦ 0.5. X) indicates the composition ratio of the first activator Eu element, and is preferably 0.0001 ≦ x ≦ 0.5. If x is less than 0.0001, the emission luminance is reduced, and x exceeds 0.5. Also, the emission luminance tends to decrease due to concentration quenching. More preferably, 0.005 ≦ x ≦ 0.
4, more preferably 0.01 ≦ x ≦ 0.2.

Y represents the composition ratio of at least one of Mn, Fe, Cr, and Sn.
001 ≦ y ≦ 0.5 is preferable, and more preferably 0.0 ≦ y ≦ 0.5.
05 ≦ y ≦ 0.4, more preferably 0.01 ≦
y ≦ 0.3. If y exceeds 0.5, the emission luminance tends to decrease due to concentration quenching.

The phosphor is excited by visible light of a relatively short wavelength from ultraviolet (for example, a main wavelength of 440 nm or less) and is excited by visible light of blue to white (for example, JIS Z8110).
Of the common colors (or white, which is the basic color in the system color name diagram) to red emission colors.

In particular, since it can efficiently emit light with high luminance even by ultraviolet rays having a relatively long wavelength of about 365 nm and sufficiently contains a red component, good color rendering properties with an average color rendering index Ra of 80 or more can be obtained. You can also.

Further, it can be seen that the color tone of the above-mentioned phosphor can be adjusted by changing its composition ratio in various ways from blue to white to red. That is, when M is Sr, the emission color emits blue light by Eu2 + emission having a peak near 450 nm, but when the value of y is increased by Mn of M ′, the emission color of the phosphor becomes blue to
It shows white to red emission colors. E also when M is Ca
A similar change is shown in the amounts of u and Mn, but when M is Ba, the change in the emission color is small. In addition, the phosphor used in the present invention may be a long-wavelength ultraviolet to a relatively short-wavelength visible light (for example,
(From 230 to 300 nm to 400 to 425 nm)
And the emission color is included in the white region of the basic color name in JIS Z8110. In addition, since this phosphor is efficiently excited in the entire region of ultraviolet rays, it can be expected that the phosphor can be effectively used for short wavelength ultraviolet rays.

A light emitting device using such a phosphor emits light having two peaks, a peak near about 460 nm and a peak near about 580 nm, among the above-mentioned phosphors excited by the ultraviolet LED or the ultraviolet LD. It becomes possible to emit a spectrum. This emission spectrum has at least a spectrum component around 460 nm and a spectrum component around 580 nm, and emits fluorescent light complementary to each other. By adding SrAl2O4: Eu as a phosphor that emits green light to the alkaline earth metal halogenapatite phosphor activated with Eu containing at least Mn and / or Cl, the color rendering properties can be further enhanced.

Further, the above-mentioned phosphor may be made of Eu if desired.
In addition to Tb, Cu, Ag, Au, Cr, Nd, Dy, C
One kind selected from o, Ni, and Ti can also be contained.

The particle size of the fluorescent substance used in the present invention is preferably in the range of 1 μm to 100 μm, more preferably in the range of 10 μm to 50 μm, and still more preferably in the range of 15 μm to 30 μm. A fluorescent substance having a particle size smaller than 15 μm is relatively easy to form an aggregate,
Since the sediment is densely settled in the liquid resin, the light transmission efficiency is reduced. In the present invention, by using such a fluorescent substance having no fluorescent substance, light hiding by the fluorescent substance is suppressed, and the output of the light emitting device is improved.
Further, the fluorescent substance having the particle size range according to the present invention has high light absorption and conversion efficiency, and has a wide excitation wavelength. in this way,
By including a large-diameter fluorescent substance having excellent optical characteristics, light around the main wavelength of the light emitting element can be well converted and emitted, and mass productivity of the light emitting device is improved.

In the present invention, the particle size is a value obtained by a volume-based particle size distribution curve. The volume-based particle size distribution curve is obtained by measuring the particle size distribution by a laser diffraction / scattering method. Specifically, in an environment at a temperature of 25 ° C. and a humidity of 70%, a hexametaline having a concentration of 0.05% Each substance is dispersed in an aqueous solution of sodium acid and a laser diffraction particle size distribution analyzer (SALD-2000A)
Is obtained in a particle size range of 0.03 μm to 700 μm. In the present specification, the particle size when the integrated value is 50% in this volume-based particle size distribution curve is referred to as the center particle size, and the center particle size of the fluorescent substance used in the present invention is in the range of 15 μm to 50 μm. Is preferred.
Further, it is preferable that the fluorescent substance having the central particle diameter value is contained frequently, and the frequency value is preferably 20% to 50%. By using a fluorescent substance having a small variation in particle diameter, color unevenness is suppressed and a light-emitting device having a favorable color tone can be obtained.

The location of the fluorescent substance is not particularly limited. The fluorescent substance may be fixed to the light emitting element side of the window of the lid with a binder, or may be contained in the material of the window of the lid. Further, the light emitting element can be contained in a die bonding material for die bonding. Further, as shown in FIG. 12, a material containing a fluorescent substance in glass may be fixed on the outer upper surface of the lid. Further, the light emitting element may be contained in a resin that is relatively less deteriorated by heat and may be filled in the package concave portion so as to cover the light emitting element. Since the package of the present invention is made of metal and has excellent heat radiation properties, even if the resin is filled in the concave portion, the resin is hardly degraded by heat. Can be.

In order to directly contain the fluorescent substance in the window of the lid, for example, a mixture of a powdery or pellet-like glass and a powdery fluorescent substance is placed in the opening of the lid body, and the mixture is pressed at once by pressing. When molded, a window is formed in a form in which the fluorescent substance is contained in the glass.

When a fluorescent substance is applied to the window of the lid using a binder, the material of the binder is not particularly limited, and any of an organic substance and an inorganic substance can be used.

When an organic substance is used as a binder,
If a lid having a flat surface corresponding to the flange of the package and having a central portion that becomes a convex portion symmetrically with respect to the package concave portion from the flat surface that is the edge is used, resin is applied to the flange portion that becomes the welding surface. The color conversion member can be satisfactorily arranged in the convex portion without leakage. As a specific material of the resin, a transparent resin having excellent weather resistance such as an epoxy resin, an acrylic resin, and silicone is suitably used. In particular, it is preferable to use silicone because it is excellent in reliability and can improve the dispersibility of the fluorescent substance.

It is preferable to use an inorganic substance as a binder because the inorganic substance is close to the thermal expansion coefficient of the window and can be brought into good contact with each other. As a specific method, a sol-gel method can be used. For example, a fluorescent substance, silanol (Si (OEt) ₃ OH), and ethanol are mixed to form a slurry, and the slurry is discharged from a nozzle to a window of a lid, and then heated at 300 ° C. for 3 hours. Silanol can be SiO ₂ and the fluorescent substance can be fixed to the lid window.

Further, a binder such as alkaline earth borate, which is fine particles obtained by a precipitation method, can be used as a binder. The binder is a so-called low-melting glass. Nitrocellulose or butyl acetate 85w
A color conversion member is formed by adding a fluorescent substance to a slurry composed of t% and the above-mentioned borate of 15 wt%, applying the fluorescent substance to a window, and curing by heating. In particular, when attaching a fluorescent substance having a large particle size, a binder in which well particles are ultrafine powder even if the melting point is high, for example, silica, alumina made of Degussa, or an alkali having a fine particle size made by a precipitation method. It is preferable to use earth metal pyrophosphates, orthophosphates and the like, and these binders are Yes. These binders can be used alone or as a mixture with one another. Such a binder is a fine particle, and has a small absorption with respect to radiation in an ultraviolet to visible region, and is extremely stable in a binder, and thus is preferable.

Here, a method of applying the binder will be described. In order to sufficiently enhance the binding effect, the binder is preferably wet-pulverized in a vehicle and made into a slurry to be used as a binder slurry. The vehicle is a high-viscosity solution obtained by dissolving a small amount of a binder in an organic solvent or deionized water. For example, an organic vehicle can be obtained by adding 1% by weight of nitrocellulose as a binder to butyl acetate as an organic solvent.

A coating liquid is prepared by incorporating a fluorescent substance into the binder slurry thus obtained. The addition amount of the slurry in the coating solution can be such that the total amount of the binder in the slurry is about 1 to 3% wt with respect to the amount of the fluorescent substance in the coating solution. In order to suppress a decrease in the luminous flux maintenance rate, a method in which the amount of the binder added is small is preferable. Such a coating liquid is applied to the back of the window. After that, hot air or hot air is blown to dry. Finally, baking is performed at a temperature of 400 ° C. to 700 ° C., and the vehicle is scattered to attach a phosphor layer to a desired place with a binder.

(Diffusing Agent) In the present invention, a diffusing agent may be contained in the color conversion member in addition to the fluorescent substance. Specific diffusion agents include barium titanate,
Titanium oxide, aluminum oxide, silicon oxide and the like are preferably used. As a result, a light emitting device having good directivity characteristics can be obtained.

Here, in the present specification, the diffusing agent refers to a material having a center particle diameter of 1 nm or more and less than 5 μm. A diffusing agent having a size of 1 μm or more and less than 5 μm is preferable because it can satisfactorily reflect light from the light emitting element and the fluorescent substance and can suppress color unevenness which is likely to be caused by using a fluorescent substance having a large particle diameter. Further, the half width of the emission spectrum can be reduced, and a light-emitting device with high color purity can be obtained. On the other hand, a diffusing agent having a thickness of 1 nm or more and less than 1 μm has a low interference effect on the light wavelength from the light emitting element, but can increase the resin viscosity without reducing the luminous intensity. Accordingly, when the color conversion member is disposed by potting or the like, the fluorescent substance in the resin can be dispersed almost uniformly in the syringe and the state can be maintained, and the fluorescent substance having a large particle diameter, which is relatively difficult to handle, can be obtained. Even when a substance is used, production can be performed with a high yield. As described above, the function of the diffusing agent in the present invention differs depending on the particle size range, and can be selected or combined in accordance with the method of use.

(Filler) In the present invention, a filler may be contained in the color conversion member in addition to the fluorescent substance. The specific material is the same as the diffusing agent, but the central particle size is different from that of the diffusing agent. In this specification, the filler refers to a material having a central particle size of 5 μm or more and 100 μm or less. When a filler having such a particle diameter is contained in the light-transmitting resin, the chromaticity variation of the light-emitting device can be improved by the light scattering action, and the thermal shock resistance of the light-transmitting resin can be increased. This makes it possible to prevent disconnection of a wire that electrically connects the light emitting element and the external electrode and separation of the bottom surface of the light emitting element from the bottom surface of the concave portion of the package, even when used under a high temperature. A high light emitting device can be obtained. Further, the fluidity of the resin can be adjusted to be constant for a long time, so that the sealing member can be formed in a desired place, and mass production can be performed with high yield.

The filler preferably has a particle size and / or shape similar to that of the fluorescent substance. Here, in the present specification, the term “similar particle size” refers to a case where the difference between the respective center particle sizes of the respective particles is less than 20%. Circularity (Circularity = perimeter of a perfect circle equal to the projected area of a particle / perimeter of the projection of a particle)
Is less than 20%. By using such a filler, the fluorescent substance and the filler interact with each other, the fluorescent substance can be satisfactorily dispersed in the resin, and color unevenness is suppressed. Further, both the fluorescent substance and the filler preferably have a center particle diameter of 15 μm to 50 μm, more preferably 20 μm to 50 μm. By adjusting the particle diameters in this way, a preferable interval is provided between the particles. be able to. As a result, a light extraction path is secured, and the directional characteristics can be improved while suppressing a decrease in luminous intensity due to mixing of the filler.

[0070]

(Embodiment 1) A surface mount type light emitting device as shown in FIG. 1 is formed. The LED chip has a monochromatic emission peak of 475 nm In0.2, which is visible light, as a light emitting layer.
A nitride semiconductor device having a Ga0.8N semiconductor is used. More specifically, the LED chip is provided with a TMG (trimethyl gallium) gas, a TM
It can be formed by flowing an I (trimethylindium) gas, a nitrogen gas, and a dopant gas together with a carrier gas and forming a nitride semiconductor film by an MOCVD method. By switching between SiH4 and Cp2Mg as the dopant gas, a layer to be an n-type nitride semiconductor or a p-type nitride semiconductor is formed.

The element structure of the LED chip is such that an undoped nitride semiconductor, n-type Ga, is formed on a sapphire substrate.
An N layer, a GaN layer on which a Si-doped n-type electrode is formed to be an n-type contact layer, and n which is an undoped nitride semiconductor
-Type GaN layer and then Ga as a barrier layer constituting the light-emitting layer
InGaN sandwiched between GaN layers as a set of an N layer, an InGaN layer constituting a well layer, and a GaN layer serving as a barrier layer
It has a multiple quantum well structure in which five layers are stacked. On the light emitting layer, a p-type clad layer doped with Mg is formed of Al.
The structure is such that a GaN layer and a GaN layer which is a p-type contact layer doped with Mg are sequentially laminated. (Note that a GaN layer is formed on the sapphire substrate at a low temperature to serve as a buffer layer. The p-type semiconductor is formed at 400 ° C. after film formation.
The annealing has been performed as described above. ) The surface of each pn contact layer is exposed on the same side of the nitride semiconductor on the sapphire substrate by etching. Positive and negative pedestal electrodes were formed on the respective contact layers by using a sputtering method. A metal thin film is formed as a light-transmitting electrode on the entire surface of the p-type nitride semiconductor, and then a pedestal electrode is formed on a part of the light-transmitting electrode. After a scribe line is drawn on the completed semiconductor wafer, the semiconductor wafer is divided by external force to form LED chips as semiconductor light emitting elements.

On the other hand, a Kovar package having a concave portion and a flange portion outward from the uppermost surface of the concave portion is used, and the tip of the Kovar lead electrode is made of glass through a through hole formed in the bottom surface of the concave portion of the package. Airtight and insulated so as to be exposed from Next, an Ag plating film is formed on the package surface and the surface of the lead electrode.

An LED chip is die-bonded with a conductive epoxy resin to the bottom surface of the concave portion of the package body thus configured. Here, the joining member used for die bonding is not particularly limited, and a resin or glass containing an Au-Sn alloy, a conductive material, or the like can be used. The conductive material contained is preferably Ag, and the content is 80% or more.
When a 90% Ag paste is used, a light emitting device having excellent heat dissipation and low stress after bonding can be obtained. In addition, Au-Sn is used to make the constituent members all metal to improve reliability.
It is preferable to use an alloy as the joining member. next,
Each of the electrodes of the die-bonded LED chip and each of the lead electrodes exposed from the bottom of the concave portion of the package are Au respectively.
Make electrical continuity with wires. Here, in this embodiment, since no resin is used for the constituent members, an Al wire can be used.

Next, after the moisture in the concave portion of the package is sufficiently removed, the concave portion is sealed with a Kovar lid having a glass window at the center, and seam welding is performed.

When a reliability test was performed on the light emitting device obtained as described above, it was found that 50% under If = 500 mA.
When the light emission output is measured after the elapse of 0 hours, there is little difference from the relative output, and a light emitting device that can maintain a high output for a long time even when a large amount of current is applied can be obtained.

(Example 2) As shown in FIG. 9, when a light emitting device is formed in the same manner as in Example 1 except that the inside of the package recess is sealed with silicone without using a lid, the light emitting device is higher in length than Example 1. A light emitting device capable of maintaining output can be obtained. This seems to be the result of the fact that silicone, which is supposed to be deteriorated, can satisfactorily radiate the heat generated by the light emitting element by using the package of the present invention, and the light scattering action of the silicone is more than sufficiently exhibited. It is.

(Embodiment 3) As shown in FIG. 2, a flat surface corresponding to the flange portion of the package is provided, and the central portion is formed to be a convex portion symmetrically to the package concave portion from the flat surface which is the edge portion. When the light emitting device is formed in the same manner as in the first embodiment except that the lid is used, the same effect as in the first embodiment can be obtained.

Example 4 As shown in FIG. 4, when a light emitting device is formed in the same manner as in Example 1 except that the side surface of the package recess is tapered, the output is improved by 15% compared to Example 1.

Example 5 As shown in FIG. 5, a light emitting device is formed in the same manner as in Example 1 except that a fluorescent material is contained in the window of the lid.

Here, as the fluorescent substance, a solution in which rare earth elements of Y, Gd and Ce are dissolved in an acid at a stoichiometric ratio is coprecipitated with oxalic acid. This is mixed with a coprecipitated oxide obtained by calcination and aluminum oxide to obtain a mixed raw material. This is mixed with barium fluoride as a flux, packed in a crucible, and fired in air at a temperature of 1400 ° C. for 3 hours to obtain a fired product. The calcined product is ball-milled in water, washed, separated, dried, and finally passed through a sieve to have a center particle size of 22 μm (Y
_0.995 Gd _0.005 ) _2.750 Al ₅ O ₁₂ :
A Ce _0.250 phosphor is formed.

The above fluorescent substance is contained in a slurry composed of 90% by weight of nitrocellulose and 10% by weight of γ-alumina in an amount of 50% by weight, applied to the light emitting element side window of the lid, and cured by heating at 220 ° C. for 30 minutes. A color conversion member is configured.

The color conversion type light emitting device thus obtained has the same effects as in the first embodiment, and can emit white light with high reliability and high output.

(Embodiment 6) The light emitting element side window of the lid
A light emitting device is formed in the same manner as in Example 3 except that silicone containing 50 wt% of a fluorescent substance is filled, and the same effect as in Example 5 can be obtained.

(Embodiment 7) In the light emitting element side window of the lid,
When a light emitting device was formed in the same manner as in Example 6 except that a color conversion member was formed by applying silica gel containing 50 wt% of a fluorescent substance, the same effect as in Example 6 was obtained.

(Embodiment 8) The LED chip uses a nitride semiconductor device having a 375 nm GaN semiconductor having an emission peak in an ultraviolet region as a light-emitting layer. L with Sn alloy
Die bond the ED chip. Next, each electrode of the die-bonded LED chip and each lead electrode exposed from the bottom surface of the concave portion of the package are electrically connected to each other by Au wires.

Next, the fluorescent material is SrHP as a raw material.
O ₄ , SrCO ₃ , Eu ₂ O ₃ , MnCO ₃ , NH ₄ C
l (Sr _0.96 , Eu _0.01 , M
n _0.03 ) ₁₀ (PO ₄ ) ₆ Cl ₂ is adjusted and mixed so as to have a composition ratio. (SrHPO ₄ : 1000 g, S
rCO ₃ : 482.4 g, Eu ₂ O ₃ : 16.0 g, M
nCO ₃ : 35.2 g, NH ₄ Cl: 116.5 g) The raw materials are weighed and thoroughly mixed in a dry system by a mixer such as a ball mill. This mixed raw material is packed in a crucible made of SiC, quartz, alumina, or the like, and heated at 960 ° C. in a reducing atmosphere of N ₂ and H _2.
/ Hr to 1200 ° C and 3 ° C at 1200 ° C
Bake for hours. The obtained fired product is pulverized, dispersed, sieved, separated, washed with water and dried in water to obtain a desired phosphor powder.

Next, using the same lid as that of the third embodiment, a dielectric multilayer thin film made of TiO ₂ / SiO ₂ on the back side of the light-transmitting window of the lid facing the light emitting element is formed. In the present embodiment, the location of the dielectric multilayer thin film is not limited to the above, and the principal surface of the translucent window of the lid or / and / or the like.
And on the back.

Here, the dielectric multilayer thin film substantially reflects light in the ultraviolet region and substantially transmits visible light.
In this embodiment, an LED chip that emits light in the ultraviolet region is used. However, the dielectric multilayer thin film is formed on the back of the light-transmitting window of the lid, and a fluorescent substance is applied to the back of the dielectric multilayer thin film. By doing so, the ultraviolet light absorbed by the fluorescent substance is converted into a visible light and is extracted outside.
On the other hand, the ultraviolet light which is not absorbed by the fluorescent substance and whose wavelength is not converted is reflected almost completely by the dielectric multilayer thin film, and is reflected by the dielectric multilayer thin film until the fluorescent substance converts the wavelength into visible light. This makes it possible to obtain a light-emitting device that can efficiently absorb ultraviolet excitation light into the fluorescent substance and emit light with high luminance. The dielectric multilayer thin film, by alternately stacking several to several tens of dielectric thin films of a high refractive index layer and a low refractive index layer in a layered manner, the absorption is small, and an arbitrary spectral reflectance is selected. Can be
It is possible to obtain a reflectance close to 100% for a specific wavelength. Specifically, TiO ₂ , Ta ₂ O ₅ and ZnS
It is preferable that a high refractive index layer made of at least one substance selected from the group consisting of and a low refractive index layer made of at least one substance selected from the group consisting of SiO ₂ and MgF ₂ are alternately formed as layers. .

Next, the obtained phosphor and SiO ₂ filler or diffusing agent were contained in a slurry composed of 90 wt% of nitrocellulose and 10 wt% of γ-alumina, and formed on the back surface of the light-transmitting window of the lid. A color conversion member is formed by applying the composition on the back surface of the dielectric multilayer thin film and heating and curing at 220 ° C. for 30 minutes. After the moisture in the concave portion of the package is sufficiently removed, the concave portion is sealed with a Kovar lid having a glass window at the center, and seam welding is performed to form a light emitting device. The light emitting device thus obtained can emit light with high reliability and high output, and the chromaticity coordinates (x, y) = (0.38
4, 0.332).

(Embodiment 9) Instead of the dielectric multilayer thin film,
Example 8 except that a glass layer made of Pb capable of substantially absorbing light in the ultraviolet region and substantially transmitting visible light was formed.
When the light emitting device is formed in the same manner as in Example 8, the luminance is lower than that in Example 8, but the reliability is improved. Here, the material of the glass layer is not particularly limited as long as it can substantially absorb light in an ultraviolet region and substantially transmit visible light.

(Embodiment 10) As an LED chip, 37
A light emitting device is formed in the same manner as in Example 3, except that a nitride semiconductor element having a 5 nm GaN semiconductor is electrically connected to a metal package. FIG. 12 shows a top view which is the main surface side of the translucent window portion of the lid of the light emitting device thus obtained.
As described above, a color conversion member containing the same fluorescent substance as in Example 8 and having a dielectric multilayer thin film made of TiO ₂ / SiO ₂ on the upper surface side is fixed with low-melting glass.

Here, a method for forming the color conversion member will be described. First, a mixture of glass and a fluorescent substance is cured into a rod shape. The rod is cut into a desired film thickness in accordance with the desired color tone of light, arranged in a vacuum deposition apparatus, and a dielectric multilayer thin film is formed on the cut surface on the upper surface side. On the other hand, a reflective thin film capable of favorably reflecting both ultraviolet light and visible light may be provided on a surface other than the above-mentioned upper surface, that is, on the bottom surface and the side surfaces, whereby higher output can be further improved. However, when the reflection thin film is provided on the bottom surface, the reflection thin film is not formed on the entire surface, but is formed as a portion through which the excitation light from the light emitting element is introduced.

The light emitting device thus obtained has the same effects as in the eighth embodiment, and also has excellent mass productivity.

[0094]

According to the light emitting device of the present invention, by using a highly reliable metal package, the reliability can be maintained without deterioration even when a large amount of current is applied. Thus, a light-emitting device with high reliability and capable of emitting light having the same brightness as illumination can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic plan view and a schematic sectional view showing a light emitting device of the present invention.

FIG. 2 is a schematic plan view and a schematic sectional view showing another light emitting device of the present invention.

FIG. 3 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 4 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 5 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 6 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 7 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 8 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 9 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 10 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 11 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 12 is a schematic sectional view showing another light emitting device of the present invention.

FIG. 13 is a schematic sectional view of a light emitting device shown for comparison with the present invention.

FIG. 14 is a schematic sectional view of a light emitting device shown for comparison with the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Light emitting element 2 ... Lead electrode 3 ... Insulating member 4 ... Wire 5 ... Metal package 6 ... Lid 7 ... Window part 8 ... Fluorescent substance 9 ...・ Mold resin 10 ・ ・ ・ Metal base 11 ・ ・ ・ Can with window 12 ・ ・ ・ Flange 13 ・ ・ ・ Color conversion member 14 ・ ・ ・ Dielectric multilayer thin film 15 ・ ・ ・ Adhesive member

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F041 AA11 AA43 CA05 CA34 CA40 CA46 CA65 CA76 DA07 DA09 DA73 DA76 EE25 FF01 FF11

Claims (5)

[Claims] 1. A light emitting device, comprising: a recess for accommodating the light emitting device; and at least one through hole penetrating in a thickness direction on a bottom surface of the recess, and a lead electrode is provided in the through hole via an insulator. A light emitting device comprising: a metal package in which a concave portion is inserted; and a top surface of the concave portion has a flange portion in an outward direction. 2. The light emitting device according to claim 1, wherein the mounting surface of the lead electrode has a larger area than the main surface. 3. The light emitting device according to claim 1, wherein a side surface of the concave portion has a tapered shape. 4. A light-transmitting sealing member for covering the light-emitting element in the recess, and a part of light from the light-emitting element is absorbed in the sealing member to emit light of different wavelengths. The light-emitting device according to claim 1, further comprising a fluorescent substance capable of being used. 5. The light emitting device according to claim 1, wherein the metal package has an Ag plating layer on a surface of a substrate made of Kovar or iron.