JP2002353497A - Light-emitting device - Google Patents
Light-emitting deviceInfo
- Publication number
- JP2002353497A JP2002353497A JP2001159991A JP2001159991A JP2002353497A JP 2002353497 A JP2002353497 A JP 2002353497A JP 2001159991 A JP2001159991 A JP 2001159991A JP 2001159991 A JP2001159991 A JP 2001159991A JP 2002353497 A JP2002353497 A JP 2002353497A
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- Prior art keywords
- light
- light emitting
- emitting layer
- reflection
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板上に発光層を
形成して電圧を印加することによって発光層から発光す
るＬＥＤチップ（以下、「発光素子」という。）に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED chip which emits light from a light emitting layer when a light emitting layer is formed on a substrate and a voltage is applied thereto (hereinafter referred to as "light emitting element").
【０００２】[0002]
【従来の技術】発光素子は、例えば、ＧａＡｓ等の結晶
基板の上にＧａＡｓ系等の結晶層をエピタキシャル成長
させて発光層を形成し、アノードとカソードの電極を設
けて電圧を印加することによって、発光層から光が発せ
られて上面（発光面）から光が放射されるものである。2. Description of the Related Art For example, a light-emitting device is formed by epitaxially growing a GaAs-based crystal layer on a GaAs-based crystal substrate to form a light-emitting layer, providing anode and cathode electrodes, and applying a voltage. Light is emitted from the light emitting layer and emitted from the upper surface (light emitting surface).
【０００３】[0003]
【発明が解決しようとする課題】しかし、一般に発光素
子の発光層を含む結晶層は屈折率が高く、発光した光の
吸収率も高いため、発光素子からの光の取り出し効率が
低いという問題点があった。即ち、発光層で光が発生す
るが、上面（発光面）に臨界角以内で入射する光だけが
効率良く外部放射される。ところが発光層の屈折率が高
いため、この臨界角は非常に小さく、一部の光しか外部
放射されず、それ以外の光は吸収率の高い結晶層中で吸
収されて、大部分が熱に変換されてしまう。However, in general, the crystal layer including the light emitting layer of the light emitting element has a high refractive index and a high absorptivity of emitted light, so that the light extraction efficiency from the light emitting element is low. was there. That is, light is generated in the light emitting layer, but only light incident on the upper surface (light emitting surface) within a critical angle is efficiently radiated to the outside. However, since the refractive index of the light-emitting layer is high, this critical angle is very small, and only a part of the light is radiated to the outside, and the other light is absorbed in the crystal layer having a high absorptance, and most of the light is exposed to heat. Will be converted.
【０００４】そこで、本発明は、発光層で発した光のう
ち発光層に対し水平な方向成分の大きい伝播光を反射さ
せることにより上面に臨界角以内で入射させ、結晶から
の光の取り出し効率を増して光出力を向上できる発光素
子を提供することを課題とするものである。[0004] Therefore, the present invention provides a light extraction efficiency of light from a crystal by reflecting propagating light having a large horizontal component to the light emitting layer out of the light emitted from the light emitting layer so as to be incident on the upper surface within a critical angle. It is an object of the present invention to provide a light emitting element that can increase the light output by increasing the light output.
【０００５】[0005]
【課題を解決するための手段】請求項１の発明にかかる
発光素子は、発光素子の底面に発光層から発せられた光
を上方へ反射する反射溝及び／または反射孔が形成され
ているものである。According to a first aspect of the present invention, there is provided a light-emitting device having a light-emitting device in which a reflection groove and / or a reflection hole for reflecting light emitted from a light-emitting layer upward is formed on a bottom surface of the light-emitting device. It is.
【０００６】発光層内の発光点から斜め横方向に放射さ
れる光は結晶界面までの距離が長く、吸収率の高い結晶
層中で吸収されて熱変換される。しかも、横方向は立体
角が大きく、この範囲へ放射される光量は大きい。この
従来外部放射されなかった光を、発光素子の底面に光を
上方へ反射する反射溝または反射孔あるいはその両方を
形成することによって外部放射することができ、光の取
り出し効率を増大させることができる。Light emitted from the light emitting point in the light emitting layer obliquely in the horizontal direction has a long distance to the crystal interface and is absorbed and converted into heat in the crystal layer having a high absorption rate. Moreover, the solid angle in the horizontal direction is large, and the amount of light radiated to this range is large. The light that has not been conventionally emitted externally can be emitted externally by forming a reflecting groove or a reflecting hole or both on the bottom surface of the light emitting element to reflect the light upward, thereby increasing the light extraction efficiency. it can.
【０００７】このようにして、発光層で発した光のうち
発光層に対し水平な方向成分の大きい伝播光を反射させ
ることにより上面に臨界角以内で入射させ、結晶からの
光の取り出し効率を増して光出力を向上できる発光素子
となる。[0007] In this way, of the light emitted from the light emitting layer, the propagating light having a large horizontal component is reflected on the light emitting layer so that the light is incident on the upper surface within a critical angle, and the light extraction efficiency from the crystal is improved. The light emitting element can further increase the light output.
【０００８】請求項２の発明にかかる発光素子は、請求
項１の構成において、前記発光層が前記底面側に形成さ
れているものである。According to a second aspect of the present invention, in the light emitting device according to the first aspect, the light emitting layer is formed on the bottom surface side.
【０００９】これによって、発光層と底面との上下方向
の差が殆どなくなるため、発光層内の発光点からほぼ水
平方向に放射された光をも底面に形成された反射溝また
は反射孔によって上方へ反射して外部放射することがで
きるので、光量の大きい横方向への放射光の大部分を外
部放射することができる。また、発光層が底面の電極に
近接して設けられるので、発光層の熱を底面の電極を介
して逃がすことができ、放熱性が向上するため発光効率
も増大する。[0009] Thereby, the vertical difference between the light emitting layer and the bottom surface is almost eliminated, so that the light emitted from the light emitting point in the light emitting layer in a substantially horizontal direction is also reflected upward by the reflecting groove or the reflecting hole formed on the bottom surface. Therefore, most of the laterally radiated light having a large amount of light can be radiated to the outside. Further, since the light emitting layer is provided close to the electrode on the bottom surface, heat of the light emitting layer can be released through the electrode on the bottom surface.
【００１０】このようにして、底面に向かって横方向か
ら放射される光をも上方へ反射させることによって光の
取り出し効率をさらに増すとともに、放熱性の向上によ
って発光効率も増大して、光出力をより向上できる発光
素子となる。In this way, the light emitted from the lateral direction toward the bottom surface is also reflected upward, thereby further increasing the light extraction efficiency, and improving the heat dissipation to increase the luminous efficiency. Is a light-emitting element that can further improve.
【００１１】請求項３の発明にかかる発光素子は、請求
項１または請求項２の構成において、両極の電極が前記
底面側に形成されているものである。According to a third aspect of the present invention, in the light emitting device according to the first or second aspect, both electrodes are formed on the bottom surface side.
【００１２】したがって、上面に電極を形成する必要が
ないので、発光素子を小チップ化しても、本発明にかか
る底面に形成された反射溝または反射孔によって光を上
方へ反射して外部放射効率を向上させる効果は維持され
る。そして、発光素子が小チップ化されることによっ
て、発光素子の結晶層内で何回か反射されて外部放射さ
れる光の経路が短くなるため、光の吸収率が高い結晶層
中で吸収される割合が減少して外部放射効率が一段と向
上する。Therefore, since it is not necessary to form an electrode on the upper surface, even if the light emitting element is miniaturized, the light is reflected upward by the reflection groove or the reflection hole formed on the bottom surface according to the present invention, and the external radiation efficiency is reduced. The effect of improving is maintained. Since the light emitting element is reduced in size to a small chip, the path of light that is reflected several times in the crystal layer of the light emitting element and emitted externally is shortened, so that the light is absorbed in the crystal layer having a high light absorption rate. External radiation efficiency is further improved.
【００１３】このようにして、上面に電極を形成する必
要がないので小チップ化が可能となり、光の取り出し効
率を一段と向上させることができる発光素子となる。In this manner, since it is not necessary to form an electrode on the upper surface, it is possible to reduce the size of the chip, and to obtain a light emitting element capable of further improving light extraction efficiency.
【００１４】請求項４の発明にかかる発光素子は、請求
項１乃至請求項３のいずれか１つの構成において、前記
反射溝及び／または反射孔が前記発光層内にまで達して
いるものである。According to a fourth aspect of the present invention, in the light emitting device according to any one of the first to third aspects, the reflection groove and / or the reflection hole extends into the light emitting layer. .
【００１５】かかる構成の発光素子においては、発光層
内の各発光点から水平方向に放射される光は勿論、やや
斜め上方へ放射される光をも発光層内に達して形成され
た反射溝または反射孔によって上方へ反射することがで
きる。これによって、光量の大きい横方向への放射光の
殆ど全てを外部放射することができる。In the light-emitting device having such a configuration, not only light radiated from each light-emitting point in the light-emitting layer in the horizontal direction but also light radiated slightly obliquely upward reaches the light-emitting layer. Alternatively, the light can be reflected upward by the reflection hole. Thereby, almost all of the laterally radiated light having a large light amount can be radiated to the outside.
【００１６】このようにして、発光層内の各発光点から
横方向に放射される光の殆ど全てを上方へ反射させるこ
とによって光の取り出し効率をさらに増して光出力をよ
り向上できる発光素子となる。As described above, a light emitting element capable of further increasing the light extraction efficiency and further improving the light output by reflecting almost all of the light radiated laterally from each light emitting point in the light emitting layer upward. Become.
【００１７】請求項５の発明にかかる発光素子は、請求
項１乃至請求項３のいずれか１つの構成において、前記
発光層の発光エリアが前記反射溝及び／または反射孔の
形成されている箇所以外に形成された分割発光エリアと
なっているものである。According to a fifth aspect of the present invention, in the light-emitting device according to any one of the first to third aspects, the light-emitting area of the light-emitting layer is a portion where the reflection groove and / or the reflection hole is formed. It is a divided light emitting area formed other than the above.
【００１８】かかる構成の発光素子においては、発光層
内に反射溝または反射孔が形成されていないので、反射
溝または反射孔形成時の発光層への影響を小さくするこ
とができ、物理的に弱い発光層にも対応できる。そし
て、反射溝または反射孔を発光層の発光エリアを超える
高さまで形成することによって、反射溝または反射孔を
発光層内に達して形成した場合と同様に、発光層内の各
発光点から水平方向に放射される光は勿論、やや斜め上
方へ放射される光をも反射溝または反射孔によって上方
へ反射することができる。これによって、光量の大きい
横方向への放射光の殆ど全てを外部放射することができ
る。In the light-emitting element having such a configuration, since the reflection groove or the reflection hole is not formed in the light-emitting layer, the influence on the light-emitting layer when the reflection groove or the reflection hole is formed can be reduced, and the light-emitting element can be physically formed. It can also handle weak light emitting layers. Then, by forming the reflecting groove or the reflecting hole to a height exceeding the light emitting area of the light emitting layer, similarly to the case where the reflecting groove or the reflecting hole is formed reaching the inside of the light emitting layer, the light is horizontally emitted from each light emitting point in the light emitting layer. Not only light radiated in the direction but also light radiated slightly obliquely upward can be reflected upward by the reflection groove or the reflection hole. Thereby, almost all of the laterally radiated light having a large light amount can be radiated to the outside.
【００１９】このようにして、物理的に弱い発光層にも
対応することができるとともに、発光層内の各発光点か
ら横方向に放射される光の殆ど全てを上方へ反射させる
ことによって光の取り出し効率をさらに増して光出力を
より向上できる発光素子となる。In this way, it is possible to cope with a physically weak light-emitting layer, and to reflect almost all of the light radiated in the lateral direction from each light-emitting point in the light-emitting layer upward, thereby reducing the light emission. The light emitting element can further improve the light extraction efficiency and improve the light output.
【００２０】請求項６の発明にかかる発光素子は、請求
項１乃至請求項５のいずれか１つの構成において、前記
発光層より屈折率の小さい基板が前記発光層の上方に位
置しているものである。According to a sixth aspect of the present invention, in the light emitting device according to any one of the first to fifth aspects, a substrate having a lower refractive index than the light emitting layer is located above the light emitting layer. It is.
【００２１】このように屈折率の小さい基板が屈折率の
大きい発光層の上にあることによって、発光層から横方
向に放射される光は高い屈折率の結晶層内に閉じ込めら
れるので、横方向に放射される光のうち上成分を有する
光についても、底面に形成された反射溝によって上方へ
の反射がなされる。この結果、上方へ反射される光の割
合が増大して、外部放射効率がさらに向上する。また、
屈折率の大きい発光層から直接空気中に光が放射される
場合に比べて、各界面における臨界角が大きくなって光
が取り出しやすくなる。Since the low-refractive-index substrate is on the high-refractive-index light-emitting layer, light emitted from the light-emitting layer in the horizontal direction is confined in the high-refractive-index crystal layer. The light having the upper component of the light radiated to the bottom is also reflected upward by the reflection groove formed on the bottom surface. As a result, the proportion of light reflected upward is increased, and the external radiation efficiency is further improved. Also,
The critical angle at each interface is larger and light is easier to extract as compared with the case where light is directly emitted into the air from the light emitting layer having a large refractive index.
【００２２】このようにして、屈折率の大きい結晶層に
閉じ込められた光を上方へ反射するとともに、各界面に
おける臨界角が大きくなって光が取り出しやすくなり、
より光の取り出し効率を増して光出力を向上できる発光
素子となる。In this way, the light confined in the crystal layer having a large refractive index is reflected upward, and the critical angle at each interface is increased, so that light can be easily extracted.
The light-emitting element can further increase the light extraction efficiency and improve the light output.
【００２３】[0023]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００２４】実施の形態１ まず、本発明の実施の形態１について、図１を参照して
説明する。図１（ａ）は本発明の実施の形態１にかかる
発光素子の構成を示す縦断面図、（ｂ）は底面図、
（ｃ）は反射溝と発光層の位置関係を説明する図であ
る。First Embodiment First, a first embodiment of the present invention will be described with reference to FIG. FIG. 1A is a longitudinal sectional view showing a configuration of a light emitting device according to a first embodiment of the present invention, FIG.
(C) is a diagram illustrating a positional relationship between the reflection groove and the light emitting layer.
【００２５】図１（ａ）に示されるように、本実施の形
態１の発光素子１においては、ＧａＡｓ基板３（屈折率
ｎ＝３．０）上にＧａＡｓ系の結晶層７をエピタキシャ
ル成長させて、発光層４を形成している。そして、基板
３側を上面、結晶層７側を底面として基板３の中央部に
一方の電極２を設け、結晶層７の底面全体にもう一方の
電極５を設けた後に、底面側に一定の間隔で楔形の反射
溝６を形成している。図１（ｂ）に示されるように、こ
の楔形の反射溝６は発光素子１の底面に格子状に形成さ
れており、底面側の電極５は縦横に分断されている。As shown in FIG. 1A, in the light emitting device 1 of the first embodiment, a GaAs-based crystal layer 7 is epitaxially grown on a GaAs substrate 3 (refractive index n = 3.0). And a light emitting layer 4. Then, one electrode 2 is provided at the center of the substrate 3 with the substrate 3 side as the top surface and the crystal layer 7 side as the bottom surface, and the other electrode 5 is provided on the entire bottom surface of the crystal layer 7. The wedge-shaped reflection grooves 6 are formed at intervals. As shown in FIG. 1B, the wedge-shaped reflection grooves 6 are formed in a lattice pattern on the bottom surface of the light emitting element 1, and the electrodes 5 on the bottom surface are divided vertically and horizontally.
【００２６】図１（ｃ）に示されるように、反射溝６の
楔形の角度は約９０度であり、本実施の形態１の発光素
子１においては発光層４が底面側にあるために、水平に
近い斜め下方向に放射される光をも反射溝６で上方に反
射することができる。反射溝６上の発光点４ａから隣接
する反射溝６へ放射される光の角度θ１は、結晶層７か
ら外部への臨界角θｃよりもずっと大きなものである必
要がある。また、一方で反射溝６上の発光点と隣接する
反射溝６の頂部とのなす角θ２はできるだけ大きい方が
望ましい。即ち、発光層４と反射溝６の頂部とはできる
だけ近い方が望ましい。これによって、反射溝６がない
場合には結晶層７の底面で横方向に反射されて結晶層７
の内部に閉じ込められて吸収されてしまう光が、反射溝
６によって上方へ反射されて基板３から外部放射され
る。As shown in FIG. 1C, the angle of the wedge shape of the reflecting groove 6 is about 90 degrees. In the light emitting element 1 of the first embodiment, since the light emitting layer 4 is on the bottom side, Light radiated in a diagonally downward direction that is nearly horizontal can also be reflected upward by the reflection groove 6. The angle θ1 of the light emitted from the light emitting point 4a on the reflection groove 6 to the adjacent reflection groove 6 needs to be much larger than the critical angle θc from the crystal layer 7 to the outside. On the other hand, it is desirable that the angle θ2 between the light emitting point on the reflection groove 6 and the top of the adjacent reflection groove 6 is as large as possible. That is, it is desirable that the light emitting layer 4 and the top of the reflection groove 6 are as close as possible. Accordingly, when there is no reflection groove 6, the light is reflected laterally on the bottom surface of the crystal layer 7 and
The light confined inside and absorbed by the inside is reflected upward by the reflection groove 6 and emitted from the substrate 3 to the outside.
【００２７】このようにして、本実施の形態１の発光素
子１においては、発光層４が底面側にあるために、水平
に近い斜め下方向に放射される光をも反射溝６で上方に
反射することができ、光の取り出し効率が増して光出力
を向上することができる。As described above, in the light emitting device 1 of the first embodiment, since the light emitting layer 4 is on the bottom side, the light radiated in the obliquely downward direction, which is almost horizontal, is also directed upward by the reflecting groove 6. The light can be reflected, the light extraction efficiency can be increased, and the light output can be improved.
【００２８】実施の形態２ 次に、本発明の実施の形態２について、図２を参照して
説明する。図２は本発明の実施の形態２にかかる発光素
子の構成を示す縦断面図である。なお、実施の形態１と
同一の部分には同一の符号を付して説明を省略する。Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a longitudinal sectional view illustrating a configuration of the light emitting device according to the second embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
【００２９】図２に示されるように、本実施の形態２の
発光素子１１が実施の形態１の発光素子１と異なるの
は、反射溝１２が発光層４を突き抜けて発光層４の上ま
で達して形成されている点である。これによって、発光
層４内の各発光点から水平方向に放射される光は勿論、
やや斜め上方へ放射される光をも発光層４を突き抜けて
形成された反射溝１２によって上方へ反射することがで
きる。これによって、光量の大きい横方向への放射光の
殆ど全てを外部放射することができる。As shown in FIG. 2, the light emitting element 11 of the second embodiment is different from the light emitting element 1 of the first embodiment in that the reflection groove 12 penetrates the light emitting layer 4 and extends up to the light emitting layer 4. It is a point that has been formed. Accordingly, the light emitted in the horizontal direction from each light emitting point in the light emitting layer 4 is, of course,
Light radiated slightly obliquely upward can also be reflected upward by the reflection groove 12 formed through the light emitting layer 4. Thereby, almost all of the laterally radiated light having a large light amount can be radiated to the outside.
【００３０】このようにして、本実施の形態２の発光素
子１１においては、発光層４内の各発光点から横方向に
放射される光の殆ど全てを上方へ反射させることによっ
て、光の取り出し効率をさらに増して光出力をより向上
させることができる。As described above, in the light emitting device 11 of the second embodiment, almost all of the light radiated from each light emitting point in the light emitting layer 4 in the lateral direction is reflected upward, thereby extracting light. The efficiency can be further increased and the light output can be further improved.
【００３１】実施の形態３ 次に、本発明の実施の形態３について、図３を参照して
説明する。図３（ａ）は本発明の実施の形態３にかかる
発光素子の構成を示す縦断面図、（ｂ）は底面図であ
る。なお、実施の形態１，２と同一の部分には同一の符
号を付して説明を省略する。Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 3A is a longitudinal sectional view showing a configuration of the light emitting device according to the third embodiment of the present invention, and FIG. 3B is a bottom view. The same parts as those in the first and second embodiments are denoted by the same reference numerals, and description thereof is omitted.
【００３２】図３に示されるように、本実施の形態３の
発光素子２１が実施の形態１，２の発光素子１，１１と
異なるのは、発光層１４の発光エリアが、反射溝１２が
形成される箇所を避けて分割発光エリアとなって形成さ
れている点である。そして、反射溝１２は、結晶層１３
内のこの発光層１４の形成されていない部分を突き抜け
て、発光層１４の上まで達して形成されている。これに
よって、反射溝１２を形成する際の発光層１４への影響
を小さくすることができるので、物理的に弱い発光層１
４にも対応することができる。この効果は、本実施の形
態３の発光素子２１のように反射溝１２が発光層１４の
上まで達して形成される場合のみならず、実施の形態１
の発光素子１のように反射溝６が発光層４まで達しない
場合にも同様に得ることができる。As shown in FIG. 3, the light emitting element 21 of the third embodiment differs from the light emitting elements 1 and 11 of the first and second embodiments in that the light emitting area of the light emitting layer 14 is The point is that it is formed as a divided light emitting area while avoiding the formed portion. The reflection groove 12 is formed on the crystal layer 13.
The light-emitting layer 14 extends through the portion where the light-emitting layer 14 is not formed. Thereby, the influence on the light emitting layer 14 when the reflection groove 12 is formed can be reduced, so that the physically weak light emitting layer 1 is formed.
4 can be supported. This effect can be obtained not only when the reflection groove 12 is formed to reach above the light emitting layer 14 as in the light emitting element 21 of the third embodiment, but also in the first embodiment.
In the case where the reflection groove 6 does not reach the light-emitting layer 4 as in the light-emitting element 1 described above, the same can be obtained.
【００３３】そして、反射溝１２が発光層１４の上まで
達して形成されていることによって、発光層１４内の各
発光点から水平方向に放射される光は勿論、やや斜め上
方へ放射される光をも反射溝１２によって上方へ反射す
ることができる。これによって、光量の大きい横方向へ
の放射光の殆ど全てを外部放射することができる。Since the reflecting groove 12 is formed so as to reach the upper part of the light emitting layer 14, not only light emitted from each light emitting point in the light emitting layer 14 in the horizontal direction but also slightly obliquely upward. Light can also be reflected upward by the reflection groove 12. Thereby, almost all of the laterally radiated light having a large light amount can be radiated to the outside.
【００３４】このようにして、本実施の形態３の発光素
子２１においては、物理的に弱い発光層１４にも対応す
ることができるとともに、発光層１４内の各発光点から
横方向に放射される光の殆ど全てを上方へ反射させるこ
とによって、光の取り出し効率をさらに増して光出力を
より向上させることができる。As described above, the light emitting device 21 according to the third embodiment can cope with the physically weak light emitting layer 14 and emit light from each light emitting point in the light emitting layer 14 in the horizontal direction. By reflecting almost all of the light upward, the light extraction efficiency can be further increased, and the light output can be further improved.
【００３５】実施の形態４ 次に、本発明の実施の形態４について、図４を参照して
説明する。図４（ａ）は本発明の実施の形態４にかかる
発光素子の構成を示す縦断面図、（ｂ）は底面図であ
る。Embodiment 4 Next, Embodiment 4 of the present invention will be described with reference to FIG. FIG. 4A is a longitudinal sectional view showing a configuration of a light emitting device according to a fourth embodiment of the present invention, and FIG. 4B is a bottom view.
【００３６】図４（ａ）に示されるように、本実施の形
態４の発光素子３１においては、Ａｌ2Ｏ3 基板３３
（屈折率ｎ＝１．７）上にＧａＮ系の結晶層３７（ｎ＝
２．４）をエピタキシャル成長させて、発光層３４を形
成している。そして、基板３３側を上面、結晶層３７側
を底面として、結晶層３７の一角を取り除いて基板３３
の底面に一方の電極３２を設け、結晶層３７の底面全体
にもう一方の電極３５を設けている。即ち、発光素子３
１においては、両極の電極が底面側に形成されている。
そして、結晶層３７の底面側に一定の間隔で楔形の反射
溝３６を形成している。図４（ｂ）に示されるように、
この楔形の反射溝３６は発光素子３１の底面に格子状に
形成されており、結晶層３７の底面側の電極３５は縦横
に分断されている。As shown in FIG. 4A, in the light emitting device 31 of the fourth embodiment, the Al 2 O 3 substrate 33
(Refractive index n = 1.7) on the GaN-based crystal layer 37 (n =
The light emitting layer 34 is formed by epitaxially growing 2.4). Then, with the substrate 33 side as the upper surface and the crystal layer 37 side as the bottom surface, one corner of the crystal layer 37 is removed and the substrate 33 is removed.
The other electrode 35 is provided on the entire bottom surface of the crystal layer 37. That is, the light emitting element 3
In 1, a bipolar electrode is formed on the bottom side.
Then, wedge-shaped reflection grooves 36 are formed at regular intervals on the bottom surface side of the crystal layer 37. As shown in FIG.
The wedge-shaped reflection grooves 36 are formed in a lattice pattern on the bottom surface of the light emitting element 31, and the electrodes 35 on the bottom surface side of the crystal layer 37 are divided vertically and horizontally.
【００３７】このように、本実施の形態４の発光素子３
１においては、両極の電極が底面側に形成されているた
めに上面に電極を形成する必要がないので、発光素子３
１を小チップ化しても、結晶層３７の底面に形成された
反射溝３６によって発光層３４からの光を上方へ反射し
て外部放射効率を向上させる効果は維持される。そし
て、発光素子３１が小チップ化されることによって、結
晶層３７内で何回か反射されて外部放射される光の経路
が短くなるため、光の吸収率が高い結晶層３７中で吸収
される割合が減少して外部放射効率が一段と向上する。
勿論、発光素子３１を大チップ化した場合でも、結晶層
３７の底面に形成された反射溝３６によって発光層３４
からの光を上方へ反射して外部放射効率を向上させる効
果は得ることができる。As described above, the light emitting device 3 of the fourth embodiment
In No. 1, since the electrodes of both electrodes are formed on the bottom surface side, there is no need to form an electrode on the top surface.
Even if the chip 1 is made smaller, the effect of improving the external radiation efficiency by reflecting light from the light emitting layer 34 upward by the reflection groove 36 formed on the bottom surface of the crystal layer 37 is maintained. Since the light emitting element 31 is reduced in size to a small chip, the path of light that is reflected several times in the crystal layer 37 and radiated externally is shortened, and is absorbed in the crystal layer 37 having a high light absorption rate. External radiation efficiency is further improved.
Of course, even when the light emitting element 31 is made larger, the light emitting layer 34 is formed by the reflection groove 36 formed on the bottom surface of the crystal layer 37.
The effect of improving the external radiation efficiency by reflecting the light from the upper side can be obtained.
【００３８】さらに、発光層３４を含むＧａＮ系の結晶
層３７の屈折率（ｎ＝２．４）より屈折率の小さいＡｌ
2Ｏ3 基板３３（ｎ＝１．７）が発光層３４の上方に位
置しているため、発光層３４から横方向に放射される光
は高い屈折率の結晶層３７内に閉じ込められるので、横
方向に放射される光のうち上成分を有する光について
も、結晶層３７の底面に形成された反射溝３６によって
上方への反射がなされる。この結果、上方へ反射される
光の割合が増大して、外部放射効率がさらに向上する。Further, Al having a smaller refractive index than the refractive index (n = 2.4) of the GaN-based crystal layer 37 including the light emitting layer 34 is used.
Since the 2 O 3 substrate 33 (n = 1.7) is located above the light emitting layer 34, the light radiated from the light emitting layer 34 in the lateral direction is confined in the crystal layer 37 having a high refractive index. Of the light emitted in the lateral direction, light having an upper component is also reflected upward by the reflection groove 36 formed on the bottom surface of the crystal layer 37. As a result, the proportion of light reflected upward is increased, and the external radiation efficiency is further improved.
【００３９】このようにして、本実施の形態４の発光素
子３１においては、上面に電極を形成する必要がないの
で小チップ化が可能となり、外部放射効率が一段と向上
する。また、屈折率の小さい基板３３が発光層３４の上
方に位置していることによって、屈折率の大きい発光層
３４に閉じ込められた光を上方へ反射するとともに、各
界面における臨界角が大きくなって光が取り出しやすく
なり、より光の取り出し効率を増して光出力を向上する
ことができる。As described above, in the light emitting element 31 of the fourth embodiment, it is not necessary to form an electrode on the upper surface, so that it is possible to reduce the size of the chip, and the external radiation efficiency is further improved. Further, since the substrate 33 having a small refractive index is located above the light emitting layer 34, the light confined in the light emitting layer 34 having a large refractive index is reflected upward, and the critical angle at each interface is increased. Light can be easily extracted, and the light extraction efficiency can be further increased to improve the light output.
【００４０】上記各実施の形態においては、反射溝を縦
横の格子状に形成した例について説明したが、反射溝は
発光素子の底面の輪郭に対して斜めに形成しても良い
し、縦横と斜めが入り混じったパターンに形成しても良
い。また、反射溝の断面形状を約９０度の楔形とした場
合について説明したが、発光層からの光を効率良く上方
へ反射できる形状であれば、どのような断面形状であっ
ても構わない。さらに、反射溝を一定間隔で形成した場
合について説明したが、必ずしも一定間隔でなくても良
い。In each of the above embodiments, an example was described in which the reflection grooves were formed in a vertical and horizontal lattice shape. However, the reflection grooves may be formed obliquely with respect to the contour of the bottom surface of the light emitting element. It may be formed in a mixed pattern of oblique. Further, the case where the cross-sectional shape of the reflection groove is a wedge shape of about 90 degrees has been described, but any cross-sectional shape may be used as long as the light from the light emitting layer can be efficiently reflected upward. Further, the case where the reflecting grooves are formed at regular intervals has been described, but the reflecting grooves need not always be regular intervals.
【００４１】また、上記各実施の形態においては、発光
層からの光を上方へ反射するものとして反射溝を形成し
た場合について説明したが、反射溝の代わりに円錐形等
の反射孔を発光素子の底面一面に亘って形成しても良
い。さらには、反射溝と反射孔の両方を発光素子の底面
に形成することもできる。In each of the above embodiments, the case where the reflection groove is formed so as to reflect light from the light emitting layer upward has been described. However, instead of the reflection groove, a reflection hole such as a conical shape is formed. May be formed over the entire bottom surface. Further, both the reflection groove and the reflection hole can be formed on the bottom surface of the light emitting element.
【００４２】また、基板に対し発光層を底面側とした場
合について説明したが、この限りではなく、例えば発光
素子サイズの大きいもの（厚みは同じ）では、上側を発
光層としても有効である。Also, the case where the light emitting layer is on the bottom side with respect to the substrate has been described. However, the present invention is not limited to this. For example, when the light emitting element has a large size (the same thickness), the upper side is also effective as the light emitting layer.
【００４３】発光素子のその他の部分の構成、形状、数
量、材質、大きさ、接続関係等についても、上記各実施
の形態に限定されるものではない。The configuration, shape, quantity, material, size, connection relationship, and the like of the other parts of the light emitting element are not limited to the above embodiments.
【００４４】[0044]
【発明の効果】以上説明したように、請求項１の発明に
かかる発光素子は、発光素子の底面に発光層から発せら
れた光を上方へ反射する反射溝及び／または反射孔が形
成されているものである。As described above, in the light emitting device according to the first aspect of the present invention, a reflection groove and / or a reflection hole for reflecting light emitted from the light emitting layer upward is formed on the bottom surface of the light emitting device. Is what it is.
【００４５】発光層内の発光点から斜め横方向に放射さ
れる光は結晶界面までの距離が長く、吸収率の高い結晶
層中で吸収されて熱変換される。しかも、横方向は立体
角が大きく、この範囲へ放射される光量は大きい。この
従来外部放射されなかった光を、発光素子の底面に光を
上方へ反射する反射溝または反射孔あるいはその両方を
形成することによって外部放射することができ、光の取
り出し効率を増大させることができる。Light emitted from the light emitting point in the light emitting layer in the oblique horizontal direction has a long distance to the crystal interface and is absorbed in the crystal layer having a high absorptance and converted into heat. Moreover, the solid angle in the horizontal direction is large, and the amount of light radiated to this range is large. The light that has not been conventionally emitted externally can be emitted externally by forming a reflecting groove or a reflecting hole or both on the bottom surface of the light emitting element to reflect the light upward, thereby increasing the light extraction efficiency. it can.
【００４６】このようにして、底面に向かって放射され
る光を上方へ反射させることによって光の取り出し効率
を増して光出力を向上できる発光素子となる。As described above, by reflecting the light radiated toward the bottom face upward, the light emitting element can increase the light extraction efficiency and improve the light output.
【００４７】請求項２の発明にかかる発光素子は、請求
項１の構成において、前記発光層が前記底面側に形成さ
れているものである。According to a second aspect of the present invention, in the light emitting device according to the first aspect, the light emitting layer is formed on the bottom surface side.
【００４８】これによって、請求項１に記載の効果に加
えて、発光層と底面との上下方向の差が殆どなくなるた
め、発光層内の発光点からほぼ水平方向に放射された光
をも底面に形成された反射溝または反射孔によって上方
へ反射して外部放射することができるので、光量の大き
い横方向への放射光の大部分を外部放射することができ
る。また、発光層が底面の電極に近接して設けられるの
で、発光層の熱を底面の電極を介して逃がすことがで
き、放熱性が向上するため発光効率も増大する。In this way, in addition to the effect of the first aspect, there is almost no vertical difference between the light emitting layer and the bottom surface. Since the light can be reflected upward and radiated to the outside by the reflection groove or the reflection hole formed at the bottom, most of the radiated light in the lateral direction having a large amount of light can be radiated to the outside. Further, since the light emitting layer is provided close to the electrode on the bottom surface, heat of the light emitting layer can be released through the electrode on the bottom surface.
【００４９】このようにして、底面に向かって横方向か
ら放射される光をも上方へ反射させることによって光の
取り出し効率をさらに増すとともに、放熱性の向上によ
って発光効率も増大して、光出力をより向上できる発光
素子となる。In this way, the light emitted from the lateral direction toward the bottom surface is also reflected upward, thereby further increasing the light extraction efficiency, and improving the heat dissipation to increase the luminous efficiency. Is a light-emitting element that can further improve.
【００５０】請求項３の発明にかかる発光素子は、請求
項１または請求項２の構成において、両極の電極が前記
底面側に形成されているものである。According to a third aspect of the present invention, in the light emitting device according to the first or second aspect, both electrodes are formed on the bottom surface side.
【００５１】したがって、請求項１または請求項２に記
載の効果に加えて、上面に電極を形成する必要がないの
で、発光素子を小チップ化しても、本発明にかかる底面
に形成された反射溝または反射孔によって光を上方へ反
射して外部放射効率を向上させる効果は維持される。そ
して、発光素子が小チップ化されることによって、発光
素子の結晶層内で何回か反射されて外部放射される光の
経路が短くなるため、光の吸収率が高い結晶層中で吸収
される割合が減少して外部放射効率が一段と向上する。Therefore, in addition to the effects described in claim 1 or claim 2, since it is not necessary to form an electrode on the upper surface, even if the light emitting element is miniaturized, the reflection formed on the bottom surface according to the present invention can be reduced. The effect of improving the external radiation efficiency by reflecting light upward by the groove or the reflection hole is maintained. Since the light emitting element is reduced in size to a small chip, the path of light that is reflected several times in the crystal layer of the light emitting element and emitted externally is shortened, so that the light is absorbed in the crystal layer having a high light absorption rate. External radiation efficiency is further improved.
【００５２】このようにして、上面に電極を形成する必
要がないので小チップ化が可能となり、光の取り出し効
率を一段と向上させることができる発光素子となる。As described above, since it is not necessary to form an electrode on the upper surface, it is possible to reduce the size of the chip, and to obtain a light emitting element which can further improve the light extraction efficiency.
【００５３】請求項４の発明にかかる発光素子は、請求
項１乃至請求項３のいずれか１つの構成において、前記
反射溝及び／または反射孔が前記発光層内にまで達して
いるものである。According to a fourth aspect of the present invention, in the light-emitting device according to any one of the first to third aspects, the reflection groove and / or the reflection hole reaches the inside of the light-emitting layer. .
【００５４】かかる構成の発光素子においては、請求項
１乃至請求項３のいずれか１つに記載の効果に加えて、
発光層内の各発光点から水平方向に放射される光は勿
論、やや斜め上方へ放射される光をも発光層内に達して
形成された反射溝または反射孔によって上方へ反射する
ことができる。これによって、光量の大きい横方向への
放射光の殆ど全てを外部放射することができる。In the light emitting device having such a configuration, in addition to the effects described in any one of claims 1 to 3,
Not only light emitted in the horizontal direction from each light emitting point in the light emitting layer but also light emitted slightly obliquely upward can be reflected upward by the reflection groove or hole formed in the light emitting layer. . Thereby, almost all of the laterally radiated light having a large light amount can be radiated to the outside.
【００５５】このようにして、発光層内の各発光点から
横方向に放射される光の殆ど全てを上方へ反射させるこ
とによって光の取り出し効率をさらに増して光出力をよ
り向上できる発光素子となる。As described above, a light emitting element capable of further improving the light extraction efficiency and further improving the light output by reflecting almost all the light radiated in the lateral direction from each light emitting point in the light emitting layer upward. Become.
【００５６】請求項５の発明にかかる発光素子は、請求
項１乃至請求項３のいずれか１つの構成において、前記
発光層の発光エリアが前記反射溝及び／または反射孔の
形成されている箇所以外に形成された分割発光エリアと
なっているものである。According to a fifth aspect of the present invention, in the light emitting device according to any one of the first to third aspects, the light emitting area of the light emitting layer is a portion where the reflection groove and / or the reflection hole is formed. It is a divided light emitting area formed other than the above.
【００５７】かかる構成の発光素子においては、請求項
１乃至請求項３のいずれか１つに記載の効果に加えて、
発光層内に反射溝または反射孔が形成されていないの
で、反射溝または反射孔形成時の発光層への影響を小さ
くすることができ、物理的に弱い発光層にも対応でき
る。そして、反射溝または反射孔を発光層の発光エリア
を超える高さまで形成することによって、反射溝または
反射孔を発光層内に達して形成した場合と同様に、発光
層内の各発光点から水平方向に放射される光は勿論、や
や斜め上方へ放射される光をも反射溝または反射孔によ
って上方へ反射することができる。これによって、光量
の大きい横方向への放射光の殆ど全てを外部放射するこ
とができる。In the light emitting device having such a configuration, in addition to the effects described in any one of claims 1 to 3,
Since the reflection groove or the reflection hole is not formed in the light emitting layer, the influence on the light emission layer when the reflection groove or the reflection hole is formed can be reduced, and it is possible to cope with a physically weak light emission layer. Then, by forming the reflecting groove or the reflecting hole to a height exceeding the light emitting area of the light emitting layer, similarly to the case where the reflecting groove or the reflecting hole is formed reaching the inside of the light emitting layer, the light is horizontally emitted from each light emitting point in the light emitting layer. Not only light radiated in the direction but also light radiated slightly obliquely upward can be reflected upward by the reflection groove or the reflection hole. Thereby, almost all of the laterally radiated light having a large light amount can be radiated to the outside.
【００５８】このようにして、物理的に弱い発光層にも
対応することができるとともに、発光層内の各発光点か
ら横方向に放射される光の殆ど全てを上方へ反射させる
ことによって光の取り出し効率をさらに増して光出力を
より向上できる発光素子となる。In this way, it is possible to cope with a physically weak light-emitting layer, and to reflect almost all of the light radiated in the lateral direction from each light-emitting point in the light-emitting layer upward, thereby reducing the light emission. The light emitting element can further improve the light extraction efficiency and improve the light output.
【００５９】請求項６の発明にかかる発光素子は、請求
項１乃至請求項５のいずれか１つの構成において、前記
発光層より屈折率の小さい基板が前記発光層の上方に位
置しているものである。According to a sixth aspect of the present invention, in the light emitting device according to any one of the first to fifth aspects, a substrate having a smaller refractive index than the light emitting layer is located above the light emitting layer. It is.
【００６０】このように屈折率の小さい基板が屈折率の
大きい発光層の上にあることによって、請求項１乃至請
求項５のいずれか１つに記載の効果に加えて、発光層か
ら横方向に放射される光は高い屈折率の結晶層内に閉じ
込められるので、横方向に放射される光のうち上成分を
有する光についても、底面に形成された反射溝によって
上方への反射がなされる。この結果、上方へ反射される
光の割合が増大して、外部放射効率がさらに向上する。
また、屈折率の大きい発光層から直接空気中に光が放射
される場合に比べて、各界面における臨界角が大きくな
って光が取り出しやすくなる。By providing the substrate having a low refractive index on the light emitting layer having a high refractive index, in addition to the effect according to any one of the first to fifth aspects, the substrate can be moved laterally from the light emitting layer. Is entrapped in the crystal layer having a high refractive index, so that even light having an upper component of light emitted in the lateral direction is reflected upward by the reflection groove formed on the bottom surface. . As a result, the proportion of light reflected upward is increased, and the external radiation efficiency is further improved.
Further, as compared with the case where light is directly radiated into the air from the light emitting layer having a large refractive index, the critical angle at each interface is increased and light is easily extracted.
【００６１】このようにして、屈折率の大きい結晶層に
閉じ込められた光を上方へ反射するとともに、各界面に
おける臨界角が大きくなって光が取り出しやすくなり、
より光の取り出し効率を増して光出力を向上できる発光
素子となる。In this way, the light confined in the crystal layer having a large refractive index is reflected upward, and the critical angle at each interface is increased, so that light can be easily extracted.
The light-emitting element can further increase the light extraction efficiency and improve the light output.
【図１】 図１（ａ）は本発明の実施の形態１にかかる
発光素子の構成を示す縦断面図、（ｂ）は底面図、
（ｃ）は反射溝と発光層の位置関係を説明する図であ
る。FIG. 1A is a longitudinal sectional view showing a configuration of a light emitting device according to a first embodiment of the present invention, FIG. 1B is a bottom view,
(C) is a diagram illustrating a positional relationship between the reflection groove and the light emitting layer.
【図２】 図２は本発明の実施の形態２にかかる発光素
子の構成を示す縦断面図である。FIG. 2 is a longitudinal sectional view illustrating a configuration of a light emitting device according to a second embodiment of the present invention.
【図３】 図３（ａ）は本発明の実施の形態３にかかる
発光素子の構成を示す縦断面図、（ｂ）は底面図であ
る。FIG. 3A is a longitudinal sectional view illustrating a configuration of a light emitting device according to a third embodiment of the present invention, and FIG. 3B is a bottom view.
【図４】 図４（ａ）は本発明の実施の形態４にかかる
発光素子の構成を示す縦断面図、（ｂ）は底面図であ
る。FIG. 4A is a longitudinal sectional view showing a configuration of a light emitting device according to a fourth embodiment of the present invention, and FIG. 4B is a bottom view.
１，１１，２１，３１ 発光素子 ３，３３ 基板 ４，１４，３４ 発光層 ６，１２，３６ 反射溝 ３２，３５ 両極の電極 1,11,21,31 Light-emitting element 3,33 Substrate 4,14,34 Light-emitting layer 6,12,36 Reflection groove 32,35 Bipolar electrode
Claims (6)
光を上方へ反射する反射溝及び／または反射孔が形成さ
れていることを特徴とする発光素子。1. A light emitting device, wherein a reflection groove and / or a reflection hole for reflecting light emitted from a light emitting layer upward is formed on a bottom surface of the light emitting device.
ることを特徴とする請求項１に記載の発光素子。2. The light emitting device according to claim 1, wherein said light emitting layer is formed on said bottom surface side.
ることを特徴とする請求項１または請求項２に記載の発
光素子。3. The light emitting device according to claim 1, wherein electrodes of both poles are formed on the bottom surface side.
光層内にまで達していることを特徴とする請求項１乃至
請求項３のいずれか１つに記載の発光素子。4. The light emitting device according to claim 1, wherein the reflection groove and / or the reflection hole reaches the inside of the light emitting layer.
び／または反射孔の形成されている箇所以外に形成され
た分割発光エリアとなっていることを特徴とする請求項
１乃至請求項３のいずれか１つに記載の発光素子。5. The light-emitting area of the light-emitting layer is a divided light-emitting area formed at a portion other than the portion where the reflection groove and / or the reflection hole is formed. The light-emitting device according to any one of the above.
記発光層の上方に位置していることを特徴とする請求項
１乃至請求項５のいずれか１つに記載の発光素子。6. The light emitting device according to claim 1, wherein a substrate having a lower refractive index than the light emitting layer is located above the light emitting layer.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001159991A JP3767420B2 (en) | 2001-05-29 | 2001-05-29 | Light emitting element |
| EP02011635A EP1263058B1 (en) | 2001-05-29 | 2002-05-29 | Light-emitting element |
| EP05017307.9A EP1596443B1 (en) | 2001-05-29 | 2002-05-29 | Light-emitting element |
| US10/156,502 US6946788B2 (en) | 2001-05-29 | 2002-05-29 | Light-emitting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001159991A JP3767420B2 (en) | 2001-05-29 | 2001-05-29 | Light emitting element |
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| Publication Number | Publication Date |
|---|---|
| JP2002353497A true JP2002353497A (en) | 2002-12-06 |
| JP3767420B2 JP3767420B2 (en) | 2006-04-19 |
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ID=19003478
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001159991A Expired - Lifetime JP3767420B2 (en) | 2001-05-29 | 2001-05-29 | Light emitting element |
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