JP2001177153A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JP2001177153A JP2001177153A JP35933099A JP35933099A JP2001177153A JP 2001177153 A JP2001177153 A JP 2001177153A JP 35933099 A JP35933099 A JP 35933099A JP 35933099 A JP35933099 A JP 35933099A JP 2001177153 A JP2001177153 A JP 2001177153A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting device
- wavelength conversion
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、発光ダイオード
チップの発光を蛍光物質によって波長変換して出射する
発光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting device which converts the wavelength of light emitted from a light-emitting diode chip with a fluorescent substance and emits the light.
【０００２】[0002]
【従来の技術】従来より青色や青紫色等の紫外光を発光
する発光ダイオードチップの波長を蛍光物質によって紫
外光と波長が異なる光、例えば白色光等に変換して出射
する発光装置が開発されている。白色光を出射する発光
装置は、各種装置の表示部の照明や一般的な照明として
広く用いられている。2. Description of the Related Art Conventionally, a light emitting device has been developed which converts the wavelength of a light emitting diode chip which emits blue or blue-violet or other ultraviolet light into light having a wavelength different from the ultraviolet light by a fluorescent substance, for example, white light, and emits it. ing. Light emitting devices that emit white light are widely used as illumination for display units of various devices and general illumination.
【０００３】蛍光物質による波長変換機能を有する従来
の発光装置としては、蛍光物質を分散含有するドーム状
樹脂成型体を発光ダイオードチップに対して所定の距離
を設けて装着し、さらに全体を透明樹脂で封止した発光
装置が一般に知られている（例えば、特開平７−１９３
２８１号公報参照）。As a conventional light emitting device having a wavelength conversion function using a fluorescent substance, a dome-shaped resin molded body containing a fluorescent substance dispersed therein is mounted at a predetermined distance from a light emitting diode chip, and the whole is made of a transparent resin. A light-emitting device sealed with a seal is generally known (for example, see JP-A-7-193).
281).
【０００４】[0004]
【発明が解決しようとする課題】従来の発光装置はその
製造工程において、まず蛍光物質を分散含有するドーム
状樹脂成型体を成型し、次に、成型されたドーム状樹脂
成型体が発光ダイオードチップを覆うように配置した
後、更に全体を透明樹脂で封止する必要がある。このた
め、従来の発光装置は製造工程が複雑であった。In the conventional light emitting device, in the manufacturing process, first, a dome-shaped resin molded body containing a fluorescent substance dispersed therein is molded, and then the molded dome-shaped resin molded body is used as a light emitting diode chip. , It is necessary to further seal the whole with a transparent resin. For this reason, the manufacturing process of the conventional light emitting device was complicated.
【０００５】この発明は以上のような事情を考慮してな
されたものであり、波長変換層を蛍光物質を含む液状の
波長変換材料の塗布によって形成することにより、製造
が容易な発光装置を提供するものである。The present invention has been made in view of the above circumstances, and provides a light emitting device which is easy to manufacture by forming a wavelength conversion layer by applying a liquid wavelength conversion material containing a fluorescent substance. Is what you do.
【０００６】[0006]
【課題を解決するための手段】この発明は、発光ダイオ
ードチップと、前記チップを収容するための空洞を有す
る透光性部材と、空洞内壁面に形成された波長変換層と
を備え、前記波長変換層は液状の波長変換材料を塗布す
ることにより形成された発光装置を提供するものであ
る。According to the present invention, there is provided a light emitting diode chip, a translucent member having a cavity for accommodating the chip, and a wavelength conversion layer formed on an inner wall surface of the cavity. The conversion layer provides a light emitting device formed by applying a liquid wavelength conversion material.
【０００７】[0007]
【発明の実施の形態】この発明の発光装置においては、
発光ダイオードチップが紫外光を出射する紫外発光ダイ
オードチップであり、波長変換層を形成する波長変換材
料は紫外光を受けて紫外光と波長が異なる光に変換する
蛍光物質を含むことが好ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS In a light emitting device according to the present invention,
It is preferable that the light-emitting diode chip is an ultraviolet light-emitting diode chip that emits ultraviolet light, and the wavelength conversion material forming the wavelength conversion layer includes a fluorescent substance that receives ultraviolet light and converts it into light having a wavelength different from that of ultraviolet light.
【０００８】なお、この発明において紫外光とは紫外線
を含む青色光、青紫色光をさし、紫外発光ダイオードチ
ップとは窒化ガリウム系化合物を材料とした発光強度の
ピークが約３６０ｎｍ〜４３０ｎｍの範囲内にある発光
ダイオードチップをさす。紫外発光ダイオードチップは
上述のとおり短い波長を発するので蛍光物質を励起させ
て長波長の光を発光させる場合に都合がよい。In the present invention, the term "ultraviolet light" refers to blue light or blue-violet light containing ultraviolet light, and the term "ultraviolet light-emitting diode chip" means that a gallium nitride-based compound has a light emission peak in the range of about 360 nm to 430 nm. The light emitting diode chip inside. Since the ultraviolet light emitting diode chip emits a short wavelength as described above, it is convenient when a fluorescent substance is excited to emit light of a long wavelength.
【０００９】この発明の発光装置においては、波長変換
層が紫外光を黄色光に変換するようにしてもよい。波長
変換層に入射する紫外光の全てが黄色光に変換されると
発光装置から出射される光は黄色光となる。しかし、波
長変換層に含まれる蛍光物質の量や波長変換層の厚さに
よっては、紫外光の一部のみが黄色光に変換され、発光
装置からは紫外光（青色光）と黄色光とを混合した光が
出射される。In the light emitting device of the present invention, the wavelength conversion layer may convert ultraviolet light into yellow light. When all of the ultraviolet light incident on the wavelength conversion layer is converted into yellow light, the light emitted from the light emitting device becomes yellow light. However, depending on the amount of the fluorescent substance contained in the wavelength conversion layer and the thickness of the wavelength conversion layer, only a part of the ultraviolet light is converted into yellow light, and the light emitting device emits ultraviolet light (blue light) and yellow light. The mixed light is emitted.
【００１０】また、波長変換層が紫外光を赤色光と緑色
光に変換するようにしてもよい。この場合にも、波長変
換層に含まれる蛍光物質の量及び波長変換層の厚さによ
っては、紫外光の一部のみが赤色光と緑色光に変換さ
れ、発光装置からは赤色光と緑色光と紫外光（青色光）
とを混合した光が出射される。つまり、青色光と黄色光
とを混合、または赤色光と緑色光と青色光とを混合すれ
ば様々な色の光、例えば白色光等を発光装置から出射す
ることができる。[0010] The wavelength conversion layer may convert ultraviolet light into red light and green light. Also in this case, depending on the amount of the fluorescent substance contained in the wavelength conversion layer and the thickness of the wavelength conversion layer, only a part of the ultraviolet light is converted into red light and green light, and the light emitting device emits red light and green light. And ultraviolet light (blue light)
Is emitted. That is, if blue light and yellow light are mixed, or red light, green light, and blue light are mixed, light of various colors, for example, white light, can be emitted from the light emitting device.
【００１１】紫外光を黄色光に変換する場合に好ましい
蛍光物質としては、イットリウム・アルミニウム・ガー
ネット（以下、この明細書においてＹＡＧと称する）系
の蛍光物質を挙げることができる。As a preferable fluorescent substance when converting ultraviolet light into yellow light, a yttrium aluminum garnet (hereinafter, referred to as YAG in this specification) fluorescent substance can be exemplified.
【００１２】この発明の発光装置において、透光性部材
の材料にはエポキシ樹脂、シリコン樹脂、ウレタン樹脂
及びナイロン樹脂等を用いることができる。また、この
発明の発光装置において波長変換材料とは、液状のエポ
キシ樹脂、シリコン樹脂又はウレタン樹脂等に蛍光物質
を混合したものをさす。In the light emitting device of the present invention, the light transmitting member may be made of epoxy resin, silicon resin, urethane resin, nylon resin or the like. In the light emitting device of the present invention, the wavelength conversion material refers to a material obtained by mixing a fluorescent substance with a liquid epoxy resin, a silicon resin, a urethane resin, or the like.
【００１３】波長変換材料は成型された透光性部材に塗
布されるが、具体的な塗布方法としては（１）液状吐出
装置を用いて塗布するする方法、（２）噴霧装置を用い
て噴霧する方法等を挙げることができる。The wavelength conversion material is applied to the molded translucent member. Specific application methods include (1) a method of applying using a liquid discharger, and (2) a spraying using a sprayer. And the like.
【００１４】なお、この発明の発光装置においては、上
記の紫外発光ダイオードチップの他にもガリウムヒ素を
材料とした赤外線発光ダイオード、ガリウム・アルミニ
ウムヒ素を材料とした赤色発光ダイオード、ガリウムヒ
素燐を材料とした橙色または黄色発光ダイオード、ガリ
ウム燐に窒素をドープした黄緑色発光ダイオード等の様
々な発光ダイオードを用いることができる。In the light emitting device of the present invention, in addition to the above-described ultraviolet light emitting diode chip, an infrared light emitting diode using gallium arsenide, a red light emitting diode using gallium aluminum arsenide, and gallium arsenide phosphorus are used. Various light-emitting diodes such as an orange or yellow light-emitting diode, a yellow-green light-emitting diode in which gallium phosphorus is doped with nitrogen, and the like can be used.
【００１５】また、蛍光物質についても上述のＹＡＧ等
の他、基体として、亜鉛、カドミウム、マグネシウム、
シリコン、イットリウム等の稀土類元素等の酸化物、硫
化物、珪酸塩、バナジン酸塩等の無機蛍光物質、または
フルオレセイン、エオシン、油類（鉱物油）等の有機蛍
光物質から選択し、付活体として、銀、銅、マンガン、
クロム、ユウロビウム、亜鉛、アルミニウム、鉛、リ
ン、砒素、金などから選択し、融剤として、塩化ナトリ
ウム、塩化カリウム、炭酸マグネシウム、塩化バリウム
などから選択されたものを用いることができる。As for the fluorescent substance, in addition to the above-described YAG and the like, zinc, cadmium, magnesium,
Activators selected from inorganic fluorescent substances such as oxides of rare earth elements such as silicon and yttrium, sulfides, silicates and vanadates, or organic fluorescent substances such as fluorescein, eosin and oils (mineral oil) As silver, copper, manganese,
It can be selected from chromium, eurobium, zinc, aluminum, lead, phosphorus, arsenic, gold and the like, and a flux selected from sodium chloride, potassium chloride, magnesium carbonate, barium chloride and the like can be used.
【００１６】この発明の発光装置は、上述の発光ダイオ
ードと蛍光物質の組み合わせ次第で、構造を変更するこ
となく様々な色の光を出射することができる。The light emitting device of the present invention can emit light of various colors without changing the structure, depending on the combination of the light emitting diode and the fluorescent substance.
【００１７】[0017]
【実施例】以下に図面に示す実施例の基づいてこの発明
を詳述する。なお、この実施例によってこの発明が限定
されるものではない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the embodiments shown in the drawings. The present invention is not limited by the embodiment.
【００１８】実施例１ この発明の実施例１について図１に基づいて説明する。
図１に示される発光装置１は、発光ダイオードチップ２
と、発光ダイオードチップ２を収容するための透光性部
材３と、空洞内壁面に形成された波長変換層４とを備
え、波長変換層４は液状の波長変換材料を塗布すること
により形成されている。 Embodiment 1 Embodiment 1 of the present invention will be described with reference to FIG.
The light emitting device 1 shown in FIG.
And a translucent member 3 for accommodating the light emitting diode chip 2 and a wavelength conversion layer 4 formed on the inner wall surface of the cavity. The wavelength conversion layer 4 is formed by applying a liquid wavelength conversion material. ing.
【００１９】透光性部材３の内壁面は半球状に成型され
ているので、波長変換層４も半球状に形成される。これ
により、発光ダイオード２から出射された光が均一に波
長変換層４を透過し、波長変換されるので、発光装置か
ら出射される光の色は、見る方向によって色が異なる等
の色ムラがない均一な色になる。Since the inner wall surface of the translucent member 3 is formed in a hemispherical shape, the wavelength conversion layer 4 is also formed in a hemispherical shape. As a result, light emitted from the light emitting diode 2 uniformly transmits through the wavelength conversion layer 4 and is wavelength-converted, so that the color of the light emitted from the light emitting device varies in color depending on the viewing direction. Not a uniform color.
【００２０】また、樹脂成型体５は、第１、第２リード
ピン６、７が保持された金型内に熱硬化性樹脂を射出成
型法によって注入して成型されたものである。なお、リ
ードピン６、７の材料にはＣｕ又はＦｅ系の材料を用い
ている。発光ダイオードチップ２は窒化ガリウム系化合
物を材料とし、波長約３６０〜４３０ｎｍの紫外線を含
む青色光（青紫色光）を出射する紫外発光ダイオードチ
ップである。The resin molded body 5 is formed by injecting a thermosetting resin into a mold holding the first and second lead pins 6 and 7 by an injection molding method. The lead pins 6 and 7 are made of Cu or Fe-based material. The light emitting diode chip 2 is an ultraviolet light emitting diode chip that emits blue light (blue violet light) containing a gallium nitride-based compound and containing ultraviolet light having a wavelength of about 360 to 430 nm.
【００２１】発光ダイオードチップ２は、第１リードピ
ン６の凹状に窪んだカップ部８に銀ペースト（図示せ
ず）を用いて設置されている。発光ダイオードチップ２
の２つの電極（図示せず）は、金線９によって第１リー
ドピン６と第２リードピン７にそれぞれ電気的に接続さ
れている。The light emitting diode chip 2 is mounted on a concavely cup portion 8 of the first lead pin 6 using a silver paste (not shown). Light emitting diode chip 2
The two electrodes (not shown) are electrically connected to the first lead pin 6 and the second lead pin 7 by gold wires 9, respectively.
【００２２】また、発光装置１の製造手順は以下の通り
である。 透光性部材３を射出成型で成型する。 成型された透光性部材３の内壁面に波長変換材料を噴
霧して塗布し、波長変換層４を形成する。 第１、第２リードピン６、７を金型内に保持した状態
で樹脂成型体５を成型する。 第１リードピン６のカップ部８に発光ダイオードチッ
プ２を銀ペーストを用いて固定する。 紫外発光ダイオードチップ２と第１、第２リードピン
６、７に金線９をワイヤボンディングする。 透光性部材３を樹脂成型体５にエポキシ接着剤で接着
する。The manufacturing procedure of the light emitting device 1 is as follows. The translucent member 3 is molded by injection molding. A wavelength conversion material is sprayed and applied to the inner wall surface of the molded translucent member 3 to form a wavelength conversion layer 4. The resin molded body 5 is molded with the first and second lead pins 6, 7 held in a mold. The light emitting diode chip 2 is fixed to the cup part 8 of the first lead pin 6 using silver paste. A gold wire 9 is wire-bonded to the ultraviolet light emitting diode chip 2 and the first and second lead pins 6 and 7. The translucent member 3 is bonded to the resin molded body 5 with an epoxy adhesive.
【００２３】発光装置１は、発光ダイオードチップ２か
ら出射される青色光の一部が波長変換層４を透過する際
に黄色光に波長変換されるので、発光装置１から出射さ
れる光は青色光と黄色光とを混合した光、例えば白色光
となる。The light emitted from the light emitting device 1 is converted into blue light because part of the blue light emitted from the light emitting diode chip 2 is converted into yellow light when passing through the wavelength conversion layer 4. Light that is a mixture of light and yellow light, for example, white light.
【００２４】また、発光装置１の波長変換層４は、上述
のように波長変換材料を透光性部材３の内壁面に噴霧し
て塗布することにより形成されている。これにより、リ
ードピン６、７及び発光ダイオード２がセットされた樹
脂成型体５に波長変換層４が形成された透光性部材３を
エポキシ接着剤で接着するだけで発光装置１を完成させ
ることができる。従って、発光装置１は従来の発光装置
よりも製造が容易になっている。The wavelength conversion layer 4 of the light emitting device 1 is formed by spraying and applying the wavelength conversion material to the inner wall surface of the translucent member 3 as described above. Thus, the light emitting device 1 can be completed only by bonding the translucent member 3 on which the wavelength conversion layer 4 is formed to the resin molded body 5 on which the lead pins 6, 7 and the light emitting diode 2 are set with an epoxy adhesive. it can. Therefore, the light emitting device 1 is easier to manufacture than the conventional light emitting device.
【００２５】実施例２ この発明の実施例１について図２に基づいて説明する。
図２に示される発光装置２１は、図１に示される発光装
置１の樹脂成型体５を上部が開口した箱型形状の樹脂成
型体５ｂに変更してチップ部品型とし、それに伴い透光
性部材３ｂ、第１、第２リードピン６ｂ、７ｂの形状に
も変更を加えたものである。 Embodiment 2 Embodiment 1 of the present invention will be described with reference to FIG.
The light emitting device 21 shown in FIG. 2 is a chip component type in which the resin molded body 5 of the light emitting device 1 shown in FIG. The shapes of the member 3b and the first and second lead pins 6b and 7b are also changed.
【００２６】リードピン６ｂ、７ｂは樹脂成型体５ｂの
底面にリードピン６ｂ、７ｂの一端が露出し、他端が樹
脂成型体５ｂの壁部を貫通して裏側に回り込むように配
置されている。これは、リードピン６ｂ、７ｂが保持さ
れた金型内に耐熱性樹脂を注入する射出成型法で製造す
ることができる。また別の方法としては、樹脂成型体５
ｂの成型時にリードピン６ｂ、７ｂ挿入用の穴を形成し
ておき、樹脂成型体５ｂの成型後にリードピン６ｂ、７
ｂを挿入して適宜接着剤等で固定する方法等でもよい。The lead pins 6b, 7b are arranged such that one end of the lead pins 6b, 7b is exposed on the bottom surface of the resin molded body 5b, and the other end penetrates the wall of the resin molded body 5b and goes around to the back side. This can be manufactured by an injection molding method in which a heat-resistant resin is injected into a mold holding the lead pins 6b and 7b. Another method is as follows.
The holes for inserting the lead pins 6b, 7b are formed at the time of molding of the resin molded body 5b, and the lead pins 6b, 7
A method of inserting b and fixing it with an adhesive or the like as appropriate may be used.
【００２７】透光性部材３ｂは樹脂成型体５ｂの内壁に
ぴったり嵌まる形状に成型され、樹脂成型体５ｂの内壁
にエポキシ接着剤で接着されている。その他の構成及び
製造手順は図１に示される実施例１の発光装置１と同じ
である。The translucent member 3b is molded into a shape that fits exactly on the inner wall of the resin molded body 5b, and is bonded to the inner wall of the resin molded body 5b with an epoxy adhesive. Other configurations and manufacturing procedures are the same as those of the light emitting device 1 of the first embodiment shown in FIG.
【００２８】実施例３ この発明の実施例３について図３に基づいて説明する。
図３に示される発光装置３１は、図１に示される発光装
置１の樹脂成型体５と第１、第２リードピン６、７をプ
リント基板５ｃに変更し、更に透光性部材３ｃの形状も
変更したものである。プリント基板５ｃはガラスエポキ
シ樹脂からなる基板上の必要箇所に無電解メッキ法によ
って銅のメッキ層からなる第１パターン６ｃ、第２パタ
ーン７ｃが形成されたものであるが、その他公知の基板
材料を用いてもよい。プリント基板５ｃの表面には透光
性部材３ｃがエポキシ接着剤で接着されている。その他
の構成及び製造手順は図１に示される実施例１の発光装
置１と同じである。 Third Embodiment A third embodiment of the present invention will be described with reference to FIG.
In the light emitting device 31 shown in FIG. 3, the resin molded body 5 and the first and second lead pins 6, 7 of the light emitting device 1 shown in FIG. 1 are changed to a printed circuit board 5c, and the shape of the light transmitting member 3c is also changed. It has been changed. The printed board 5c is formed by forming a first pattern 6c and a second pattern 7c made of a copper plating layer at necessary places on a board made of a glass epoxy resin by an electroless plating method. May be used. A translucent member 3c is adhered to the surface of the printed board 5c with an epoxy adhesive. Other configurations and manufacturing procedures are the same as those of the light emitting device 1 of the first embodiment shown in FIG.
【００２９】以上、この発明の実施例１〜３について説
明したが、窒化ガリウム系化合物を材料とする発光ダイ
オードチップ２、２ｂ及び２ｃは、一般的に静電耐圧が
１００Ｖ以下と低いので、サージ破壊から発光ダイオー
ドチップ２、２ｂ及び２ｃを保護するためにツェナーダ
イオードを回路に組み入れてもよい。光源としては発光
ダイオードチップ２、２ｂ及び２ｃ以外に半導体レーザ
チップを用いてもよい。この場合にはエポキシ樹脂にシ
リコンフィラーなどの分散剤を混ぜて透光性部材を成型
し、半導体レーザチップから出射されるコヒーレント光
を目に安全な非コヒーレント光に変換して出射すること
が好ましい。Although the first to third embodiments of the present invention have been described above, the light emitting diode chips 2, 2b, and 2c made of a gallium nitride-based compound generally have a low electrostatic withstand voltage of 100 V or less. Zener diodes may be incorporated in the circuit to protect the light emitting diode chips 2, 2b and 2c from destruction. As a light source, a semiconductor laser chip may be used in addition to the light emitting diode chips 2, 2b, and 2c. In this case, it is preferable to mix the epoxy resin with a dispersant such as a silicon filler to form a light-transmissive member, convert coherent light emitted from the semiconductor laser chip into non-coherent light that is safe for eyes, and emit the light. .
【００３０】[0030]
【発明の効果】この発明によれば、液状の波長変換材料
を塗布することにより波長変換層を形成するので、製造
が容易な発光装置を提供することができる。According to the present invention, since the wavelength conversion layer is formed by applying a liquid wavelength conversion material, it is possible to provide a light emitting device which is easy to manufacture.
【図１】この発明の発光装置の実施例１の形態を示す部
分断面図である。FIG. 1 is a partial cross-sectional view illustrating a mode of a light emitting device according to a first embodiment of the present invention.
【図２】この発明の発光装置の実施例２の形態を示す部
分断面図である。FIG. 2 is a partial cross-sectional view illustrating an embodiment 2 of the light emitting device of the present invention.
【図３】この発明の発光装置の実施例２の形態を示す部
分断面図である。FIG. 3 is a partial sectional view showing a form of a light emitting device according to a second embodiment of the present invention.
１・・・発光装置 ２・・・発光ダイオードチップ ３・・・透光性部材 ４・・・波長変換層 ５・・・樹脂成型体 ６・・・第１リードピン ７・・・第２リードピン ８・・・カップ部 ９・・・金線 DESCRIPTION OF SYMBOLS 1 ... Light emitting device 2 ... Light emitting diode chip 3 ... Translucent member 4 ... Wavelength conversion layer 5 ... Resin molding 6 ... 1st lead pin 7 ... 2nd lead pin 8 ... Cup part 9 ... Gold wire
Claims (4)
収容するための空洞を有する透光性部材と、空洞内壁面
に形成された波長変換層とを備え、前記波長変換層は液
状の波長変換材料を塗布することにより形成された発光
装置。1. A light-emitting diode chip, a translucent member having a cavity for accommodating the chip, and a wavelength conversion layer formed on an inner wall surface of the cavity, wherein the wavelength conversion layer is a liquid wavelength conversion material. A light emitting device formed by applying a light emitting device.
る紫外発光ダイオードチップであり、波長変換層を形成
する波長変換材料は紫外光を受けて紫外光と波長が異な
る光に変換する蛍光物質を含む請求項１に記載の発光装
置。2. The light-emitting diode chip is an ultraviolet light-emitting diode chip that emits ultraviolet light, and the wavelength conversion material forming the wavelength conversion layer includes a fluorescent substance that receives ultraviolet light and converts it into light having a wavelength different from that of ultraviolet light. The light emitting device according to claim 1.
請求項２に記載の発光装置。3. The light emitting device according to claim 2, wherein the wavelength conversion layer converts ultraviolet light into yellow light.
変換する請求項２に記載の発光装置。4. The light emitting device according to claim 2, wherein the wavelength conversion layer converts ultraviolet light into red light and green light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35933099A JP2001177153A (en) | 1999-12-17 | 1999-12-17 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35933099A JP2001177153A (en) | 1999-12-17 | 1999-12-17 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001177153A true JP2001177153A (en) | 2001-06-29 |
Family
ID=18463967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35933099A Pending JP2001177153A (en) | 1999-12-17 | 1999-12-17 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001177153A (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133595A (en) * | 2001-10-24 | 2003-05-09 | Seiwa Electric Mfg Co Ltd | Light emitting diode lamp, red phosphor used for the same and filter used for the same |
| US6809342B2 (en) | 2002-05-31 | 2004-10-26 | Stanley Electric Co., Ltd. | Light-emitting device and manufacturing method thereof |
| JP2006032500A (en) * | 2004-07-13 | 2006-02-02 | Fujikura Ltd | Light emitting diode lamp and method of manufacturing same |
| JP2007214592A (en) * | 2007-04-26 | 2007-08-23 | Kyocera Corp | Light emitting apparatus |
| JP2009545888A (en) * | 2006-08-03 | 2009-12-24 | インテマティックス・コーポレーション | LED lighting arrangement including light emitting phosphor |
| US8604678B2 (en) | 2010-10-05 | 2013-12-10 | Intematix Corporation | Wavelength conversion component with a diffusing layer |
| US8610341B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Wavelength conversion component |
| US8610340B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Solid-state light emitting devices and signage with photoluminescence wavelength conversion |
| US8614539B2 (en) | 2010-10-05 | 2013-12-24 | Intematix Corporation | Wavelength conversion component with scattering particles |
| US8901585B2 (en) | 2003-05-01 | 2014-12-02 | Cree, Inc. | Multiple component solid state white light |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US9142734B2 (en) | 2003-02-26 | 2015-09-22 | Cree, Inc. | Composite white light source and method for fabricating |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| US9666772B2 (en) | 2003-04-30 | 2017-05-30 | Cree, Inc. | High powered light emitter packages with compact optics |
| US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
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| JPH11500584A (en) * | 1996-09-20 | 1999-01-12 | シーメンス アクチエンゲゼルシヤフト | Casting material for wavelength conversion, method of using the same, and method of manufacturing the same |
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133595A (en) * | 2001-10-24 | 2003-05-09 | Seiwa Electric Mfg Co Ltd | Light emitting diode lamp, red phosphor used for the same and filter used for the same |
| US6809342B2 (en) | 2002-05-31 | 2004-10-26 | Stanley Electric Co., Ltd. | Light-emitting device and manufacturing method thereof |
| US9142734B2 (en) | 2003-02-26 | 2015-09-22 | Cree, Inc. | Composite white light source and method for fabricating |
| US9666772B2 (en) | 2003-04-30 | 2017-05-30 | Cree, Inc. | High powered light emitter packages with compact optics |
| US8901585B2 (en) | 2003-05-01 | 2014-12-02 | Cree, Inc. | Multiple component solid state white light |
| JP4583826B2 (en) * | 2004-07-13 | 2010-11-17 | 株式会社フジクラ | Light emitting diode lamp and light emitting diode lamp manufacturing method |
| JP2006032500A (en) * | 2004-07-13 | 2006-02-02 | Fujikura Ltd | Light emitting diode lamp and method of manufacturing same |
| US9045688B2 (en) | 2006-08-03 | 2015-06-02 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| US9595644B2 (en) | 2006-08-03 | 2017-03-14 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| JP2009545888A (en) * | 2006-08-03 | 2009-12-24 | インテマティックス・コーポレーション | LED lighting arrangement including light emitting phosphor |
| JP2007214592A (en) * | 2007-04-26 | 2007-08-23 | Kyocera Corp | Light emitting apparatus |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US8614539B2 (en) | 2010-10-05 | 2013-12-24 | Intematix Corporation | Wavelength conversion component with scattering particles |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US8604678B2 (en) | 2010-10-05 | 2013-12-10 | Intematix Corporation | Wavelength conversion component with a diffusing layer |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| US8610340B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Solid-state light emitting devices and signage with photoluminescence wavelength conversion |
| US8610341B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Wavelength conversion component |
| US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
| US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
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