CN1916758A - Method for photo mask, and correcting exposure machine - Google Patents
Method for photo mask, and correcting exposure machine Download PDFInfo
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- CN1916758A CN1916758A CNA2005100919680A CN200510091968A CN1916758A CN 1916758 A CN1916758 A CN 1916758A CN A2005100919680 A CNA2005100919680 A CN A2005100919680A CN 200510091968 A CN200510091968 A CN 200510091968A CN 1916758 A CN1916758 A CN 1916758A
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- 230000001915 proofreading effect Effects 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 9
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- 238000005259 measurement Methods 0.000 description 6
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Abstract
A light mask consists of light transmission base plate and calibration pattern set on said base plate. It is featured as forming calibration pattern by symmetric identification pattern, comparison pattern set at periphery of identification pattern, two calibration lines being extended towards four directions separately and being set on periphery of comparison pattern. The said mask can be used to calibrate exposure machine.
Description
Technical field
The present invention relates to the method for the relative correction of a kind of board aligning tool, particularly relate to the method for a kind of photomask and correcting exposure machine.
Background technology
Photoetching making technology (Photolithography) is one of most crucial steps in the semiconductor fabrication process.The basic parameter of photoetching making technology has exposure (Exposure Dose), alignment accuracy (Alignment Accuracy), and focal length (Focus).Wherein, exposure and alignment accuracy all can off-line (Off-line, promptly separate with rail footpath machine) the measurement board photoresist figure on the produces wafer is measured, obtaining result and every result who derives of quantification, and then the manufacture craft ability of grasp exposure bench.In addition, above-mentioned measurement result can be in order to carry out automatic feedback to exposure bench, and it utilizes for example advanced manufacture craft control, and (Advanced Process Control, method APC) make exposure bench running under good parameter control.
Yet the keyholed back plate mode of focal length is different with exposure and alignment accuracy.Because can't being measured the photoresist figure with the measurement board, the size of focal length knows that therefore, be compared to the keyholed back plate of exposure and alignment accuracy, the keyholed back plate of focal length has following shortcoming at least:
1. the focal-length measurement method that general exposure bench manufacturer is provided need utilize exposure bench itself to carry out, and exposure bench can't be produced the exposure of wafer in batches when measuring, thereby has reduced the time (Uptime) of utilizing.
2. because the size of focal length can't be measured the photoresist figure and knows to measure board, therefore, can't utilize above-mentioned automatic feedback system, and need compensate, cause unavoidable artificial careless mistake in artificial mode.
3. when the production capacity deficiency of certain exposure bench, can call other boards usually and support, the focal length that support the exposure bench of being supported with quilt this moment need compare.Yet because different vendor and from generation to generation exposure bench are to be that benchmark carries out focometry with different photomasks, and the mode of measuring is also different, and therefore, the result of measurement can't compare, and the assessment that exposure bench is used alternatingly is comparatively difficult.
4. the focal-length measurement method that provided of manufacturer (for example Nikon) only can be measured at a projected area (Shot) at every turn, is not easy to obtain in a large number the measurement result of focal length.Wherein, the projected area is meant that scan exposure type exposure device (scanner) carries out single pass (Scan) and makes the zone of wafer exposure.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of photomask, this photomask is applicable to the focal length of proofreading and correct all kinds of exposure benchs, with the correction reference of the focal length of unified all kinds of exposure benchs.
A further object of the present invention is to provide a kind of method of correcting exposure machine, to improve the time of utilizing of exposure bench.
The present invention proposes a kind of photomask, is applicable to the correction of exposure bench.This photomask comprises transparent substrates and is configured at least two on the transparent substrates proofreaies and correct pattern.Respectively this correcting pattern comprises having symmetric identification icon; And be configured in contrast patterns around this identification icon; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for first pair in first party; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for second pair in second party.
The present invention reintroduces a kind of photomask, is applicable to the correction of exposure bench.This photomask comprises transparent substrates and is configured at least two on this transparent substrates proofreaies and correct pattern.Each correcting pattern comprises having symmetric identification icon; Be configured in this identification icon contrast patterns on every side; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for first pair in first party; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for second pair in second party; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for the 3rd pair the third party; And the 4th pair of correction lines, be configured in around the contrast patterns, and extend upward in the four directions.
According to the described photomask of preferred embodiment of the present invention, wherein identification icon for example is square and octagon.The area of this identification icon is at least 100 square microns.
According to the described photomask of preferred embodiment of the present invention, wherein first pair of live width of proofreading and correct lines, second pair of correction lines, the 3rd pair of correction lines and the 4th pair of correction lines is 0.1~0.2 micron.
According to the described photomask of preferred embodiment of the present invention, wherein have 9 correcting patterns on the transparent substrates, and these correcting patterns with the first spacing cross direction profiles on transparent substrates, and vertically be distributed on the transparent substrates with second spacing.
According to the described photomask of preferred embodiment of the present invention, wherein identification icon and contrast patterns one of them be the printing opacity pattern, and another is light tight pattern.
According to the described photomask of preferred embodiment of the present invention, wherein the width of contrast patterns is at least 3 microns.
Method according to the described correcting exposure machine of preferred embodiment of the present invention, wherein these a little correcting patterns are first correction group at exposure bench, and on transparent substrates more configurable second correction group at another exposure bench, wherein in first correction group and two correction group, pairing those correcting patterns are to be disposed on the diverse location.
Because correction of the present invention is applicable to all kinds of exposure benchs with photomask, therefore, the focal length of each exposure bench can compare by same benchmark, so that whether interchangeable reference to be provided between board.
The present invention reintroduces a kind of method of correcting exposure machine, and comprising provides photomask, and this photomask comprises transparent substrates and is positioned at least two correcting patterns on the transparent substrates.Wherein each correcting pattern comprises having symmetric identification icon; Be configured in identification icon contrast patterns on every side; Proofread and correct lines, be configured in around this contrast patterns, and extend upward for first pair in first party; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for second pair in second party.
Utilize this photomask, testing wafer is carried out photoetching making technology, to obtain several photoengraving patterns of corresponding these a little correcting patterns in exposure bench.Then, utilize detector to measure the total length of each photoengraving pattern respectively, to obtain several numerical value in first direction and second direction.Afterwards, with these a little numerical value with compare by the numerical value that total length obtained of correcting pattern respectively in first direction and second direction, to obtain a comparative result.Then, utilize this comparative result that exposure bench is proofreaied and correct.
The present invention more proposes a kind of method of correcting exposure machine, and comprising provides a photomask, this photomask to comprise transparent substrates and be positioned at least two correcting patterns on the transparent substrates.Wherein each correcting pattern comprises having symmetric identification icon; Be configured in this identification icon contrast patterns on every side; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for first pair in first party; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for second pair in second party; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for the 3rd pair the third party; Proofread and correct lines, be configured in around the contrast patterns, and extend upward for the 4th pair in the four directions.
Utilize this photomask, testing wafer is carried out photoetching making technology, to obtain most photoengraving patterns of corresponding these a little correcting patterns in exposure bench.Afterwards, utilize detector measure respectively each photoengraving pattern in first direction, second direction, third direction and four directions to total length, to obtain several numerical value.Then, with these a little numerical value with respectively by each correcting pattern in first direction, second direction, third direction and four directions to the numerical value that total length obtained compare, to obtain a comparative result.Then, utilize this comparative result that this exposure bench is proofreaied and correct.
According to the method for the described correcting exposure machine of preferred embodiment of the present invention, wherein detector for example is the detector of an off-line (Off-Line).This detector for example is a microscope.
According to the method for the described correcting exposure machine of preferred embodiment of the present invention, wherein utilizing comparative result that exposure bench is proofreaied and correct is to utilize feedback (feedback) mechanism, with the automatic feedback of comparative result in exposure bench to proofread and correct.
According to the method for the described correcting exposure machine of preferred embodiment of the present invention, wherein identification icon for example is square and octagon.The area of this identification icon is at least 100 square microns.
According to the method for the described correcting exposure machine of preferred embodiment of the present invention, wherein first pair of live width of proofreading and correct lines and second pair of correction lines is 0.1~0.2 micron.
According to the method for the described correcting exposure machine of preferred embodiment of the present invention, wherein first pair of live width of proofreading and correct lines, second pair of correction lines, the 3rd pair of correction lines and the 4th pair of correction lines is 0.1~0.2 micron.
Method according to the described correcting exposure machine of preferred embodiment of the present invention, wherein have 9 correcting patterns on this transparent substrates, and these a little correcting patterns, and vertically are distributed on the transparent substrates with second spacing on transparent substrates with the first spacing cross direction profiles.
According to the method for the described correcting exposure machine of preferred embodiment of the present invention, wherein identification icon and contrast patterns one of them be the printing opacity pattern, and another is light tight pattern.
According to the method for the described correcting exposure machine of preferred embodiment of the present invention, wherein the width of contrast patterns is at least 3 microns.
Method according to the described correcting exposure machine of preferred embodiment of the present invention, wherein these a little correcting patterns are first correction group at exposure bench, and on transparent substrates more configurable second correction group at another exposure bench, wherein in first correction group and two correction group, pairing those correcting patterns are to be configured on the diverse location.
The method of correcting exposure machine of the present invention is measured so need not that testing wafer is brought back exposure bench because use the detector of off-line to measure testing wafer, thus improve exposure bench utilize the time to promote production capacity.In addition, the present invention can use the automatic feedback of above-mentioned feedback mechanism in exposure bench to proofread and correct, avoid artificial proofread and correct the careless mistake that may cause.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is a kind of photomask synoptic diagram of one embodiment of the invention;
Fig. 2 is the synoptic diagram of the correcting pattern 102 of Fig. 1;
Fig. 3 is the synoptic diagram of the correcting pattern 103 of another embodiment of the present invention;
Fig. 4 is the flow chart of steps of the correcting exposure machine of the embodiment of the invention;
Fig. 5 is the synoptic diagram of the correcting pattern 102 of Fig. 2 through the photoengraving pattern 102a of exposure gained;
Fig. 6 is the synoptic diagram of the correcting pattern 103 of Fig. 3 through the photoengraving pattern 103a of exposure gained.
Embodiment
Fig. 1 is a kind of photomask 100 of one embodiment of the invention, this photomask 100 is applicable to the correction of focal length (Focus) Yu other focal length correlation parameters of exposure bench, wherein, the stepping and scan-type (Step-and-Scan) the scan exposure type exposure device (Scanner) that are for example provided of exposure bench for manufacturer Nikon, Canon or ASML.In addition, Fig. 2 is one of them correcting pattern 102 that is positioned on the photomask of Fig. 1.
Please be simultaneously with reference to Fig. 1 and Fig. 2, photomask 100 mainly is made of a transparent substrates 104 and two correcting patterns 102 that are disposed on the transparent substrates 104 at least, and correcting pattern 102 be by identification icon 106, contrast patterns 108, first pair proofread and correct lines 110, second pair and proofread and correct lines 112, the 3rd pair and proofread and correct lines 114 and the 4th pair and proofread and correct lines 116 and constituted.In the present embodiment, correcting pattern disposes four kinds and proofreaies and correct lines, yet the present invention does not limit the quantity of proofreading and correct lines.For example, Fig. 3 illustrates the correcting pattern 103 of another embodiment of the present invention, compares with correcting pattern 102, and correcting pattern 103 has omitted the 3rd pair and proofreaied and correct lines 114 and the 4th pair of correction lines 116.
Wherein, identification icon 106 has symmetry.Particularly, in order to simplify the design and fabrication of photomask, the identification icon 106 of symmetry is to be good with a square or octagon, but also can be other symmetrical pattern.In addition, because photomask 100 is the usefulness as the correction of the focal length of exposure bench and focal length correlation parameter, so the identification icon on the photomask 100 106 need have sufficient size.That is the photoengraving pattern that made comes out on wafer via identification icon 106 can not produce distortion because of the skew of board focal length and focal length correlation parameter, to improve the Figure recognition success ratio of detector.In a preferred embodiment, the area of above-mentioned identification icon is at least 100 square microns.
In addition, contrast patterns 108 is configured in around the identification icon 106, wherein, contrast patterns 108 has a width w, and one of them is a printing opacity pattern for identification icon 106 and contrast patterns 108, and another is a light tight pattern, so by the light and shade contrast collocation of identification icon 106 with contrast patterns 108, can reduce the situation of identification error significantly, and then improve the Figure recognition success ratio of detector.On the other hand, in a preferred embodiment, the width w of contrast patterns 108 is at least 3 microns.
In addition, proofread and correct lines 110, second pair and proofread and correct lines 112, the 3rd pair and proofread and correct lines 114 and the 4th pair and proofread and correct lines 116 and all be disposed at for first pair around the case 108 relatively.And first pair proofread and correct lines 110 toward the x directions extend, second pair proofread and correct lines 112 toward the y directions extend, the 3rd pair proofread and correct lines 114 toward the z directions extend and the 4th pair proofread and correct lines 116 and extend toward the w directions.
What deserves to be mentioned is that proofread and correct lines 110, second pair via first pair and proofread and correct lines 112, the 3rd pair proofread and correct lines 114 and the 4th pair of photoengraving pattern of proofreading and correct lines 116 exposures and making on wafer, its length can change because of the difference of focal length.Explain and be, if the lines length of photoengraving pattern gained equal to proofread and correct lines on wafer the length that should make, represent that then the focal length of employed exposure bench does not lose Jiao; If it is burnt that the lines length of photoengraving pattern gained, represents then that the focal length of employed exposure bench loses less than proofreading and correct the lines length that institute should make on wafer, and it is bigger to lose burnt degree, the amplitude of the contraction in length of photoengraving pattern more greatly.
In addition, it should be noted that in order to ensure losing when Jiao or other focal length correlation parameters are offset formed photoengraving pattern to be measured, need to select the width of suitable correction lines.Furtherly, if the width of proofreading and correct lines is too little, and the width of the photoengraving pattern of made may be too little when losing burnt (Defocus), even can't produce photoengraving pattern, so the problem that will cause detector to detect.Otherwise if the width of proofreading and correct lines is too big, and the susceptibility (Sensitivity) of the photoengraving pattern focusing of made is with deficiency.Therefore, when Jiao or other focal length correlation parameters are offset formed photoengraving pattern can be measured in order to ensure losing, and focusing has preferable susceptibility, in a preferred embodiment, proofread and correct lines 110, second pair for first pair and proofread and correct that lines 112, the 3rd pair are proofreaied and correct lines 114 and the 4th pair of live width of proofreading and correct lines 116 for example is 0.1 to 0.2 micron.In addition, proofreading and correct lines 110, second pair about first pair of the present invention proofreaies and correct lines 112, the 3rd pair and proofreaies and correct lines 114 and the 4th pair and proofread and correct the quantity of lines 116 and without particular limitation.
On the other hand, according to label, the type of different exposure benchs, the configuration of the figure of photomask can be different, and for example four multiplying powers (4X) are to be not quite similar with its figure configuration of photomask of five multiplying powers (5X).Therefore, in response to the demand of different platform, correction of the present invention can have different configurations with the correcting pattern of photomask.Photomask 100 with Fig. 1 is an example, and at a kind of exposure bench wherein, the correcting pattern that is configured on the transparent substrates 104 is with the symbolic representation, and at transparent substrates 104 configurable 9 identical correcting pattern.Wherein, these 9 correcting pattern, and vertically are distributed on the transparent substrates 104 with spacing v on transparent substrates 104 with spacing h cross direction profiles.That is to say; these correcting patterns has on the transparent substrates of being evenly distributed on 104; so configuration mode can detect the focal length of a projected area integral body in order to sampling, and is unusual or other are unusual with tilt boards such as Jiao of mistake on a large scale that (Tilt) caused of test example such as photomask.At this moment, we can be considered as a correction group with these correcting patterns, and the correcting pattern number in the correction group and without particular limitation, its visual user's demand and changing to some extent.
In addition, what deserves to be mentioned is, in the present invention, also the correcting pattern at various boards can be integrated into same block correction, and single photo mask can be used in multiple exposure bench, so also can reduce the cost of making photomask with on the photomask.For instance, the present invention can be at another kind of exposure bench, another correction group of configuration on photomask 100, its for example such as the symbol zero of Fig. 1 sign.Detailed explanation is that this another correction group for example is to include 9 correcting patterns zero, and these correcting patterns zero are evenly distributed on the transparent substrates 104 equally.Though more than only explanation two groups of correction group of configuration on photomask 100, yet the present invention is not limited to this, in also configurable correction group more than two groups on the photomask of the present invention.Therefore, the present invention is incorporated into the array correction group on the single photo mask, not only can save cost, and two kinds of above-mentioned exposure benchs are compared with same benchmark.
Below be to utilize Fig. 4 to illustrate to utilize above-mentioned photomask 100 to carry out the method for correcting exposure machine.Please refer to Fig. 4, carry out step 400, photomask is provided, wherein photomask for example is a photomask 100 shown in Figure 1, and it comprises that at least transparent substrates 104 and at least two correcting patterns 102 that are disposed on the transparent substrates 104 constitute.Every details about correcting pattern 102 illustrates in foregoing, repeats no more in this.
Then, carry out step 402, use above-mentioned photomask one testing wafer to be carried out a photoetching making technology, to obtain most corresponding photoengraving patterns in an exposure bench.Wherein, when carrying out step 402, be on wafer, to carry out photoresist to cover (Coating), exposure (Exposure), and the manufacture crafts such as (Development) of developing, to obtain as shown in Figure 5, corresponding to the photoengraving pattern 102a of correcting pattern 102.In another embodiment, if this photomask adopts correcting pattern 103 as shown in Figure 3, then after this step 402 is carried out, can obtain correcting pattern 103a as shown in Figure 6.
Then, carry out step 404, utilize a kind of detector to measure the total length of these photoengraving patterns respectively.Photoengraving pattern 102a with Fig. 5 is an example, in step 404, is the total length x that utilizes on detector measurement of x direction, y direction, z direction and the w direction
1, total length y
1, total length z
1And total length w
1If not only correcting pattern on the photomask then can obtain most corresponding photoengraving patterns, and can obtain most numerical value after measuring with detector.Wherein, detector for example is the detector of an off-line, so can improve the service time of exposure bench originally.In addition, this detector for example is a microscope, the electron microscope that this microscope for example provides for the KLA of manufacturer, and its major function is in order to measure various several sizes of closing of integrated circuit.
Then, carry out step 406, with detector measured and numerical value with compare by the numerical value of correcting pattern 102 gained, to obtain a comparative result.Wherein, the correcting pattern 102 of Fig. 2 has a total length x on the x direction
0, on the y direction, have a total length y
0, on the z direction, have a total length z
0, and on the w direction, have a total length w
0In this step 406, because total length x
0, total length y
0, total length z
0And total length w
0Be fixed value, so compare total length x
0With total length x
1After, can learn exposure bench in the burnt degree of the mistake of direction x, and can this lose burnt degree for according to the focal length of correcting exposure machine in the x direction.In like manner, compare total length y
0With total length y
1With focal length, the comparison total length z of correcting exposure machine in the y direction
0With total length z
1With the focal length of correcting exposure machine, and compare total length w in the z direction
0With total length w
1With the focal length of correcting exposure machine in the w direction.
Afterwards, carry out step 408, utilize above-mentioned comparative result that exposure bench is proofreaied and correct.Wherein, utilizing above-mentioned comparative result that exposure bench is proofreaied and correct for example is to utilize a feedback mechanism, with the automatic feedback of comparative result in exposure bench, and this feedback mechanism for example is an advanced manufacture craft control method (APC).
In addition, in above-mentioned photoetching making technology, can carry out the exposure of a plurality of projected areas to testing wafer, to produce most comparative results, calculate the mean value of these most comparative results again, then exposure bench is proofreaied and correct, to reduce error with this mean value.
In sum, the method for photomask of the present invention and correcting exposure machine has the following advantages at least:
1. correction of the present invention is applicable to all kinds of exposure benchs with photomask, therefore, the focal length of each exposure bench can compare by same benchmark, and because of need not to buy more the correction photomask that is fit to such exposure bench at all kinds of exposure benchs, buys the cost of proofreading and correct with photomask and saved.
2. the method for correcting exposure machine of the present invention is because use the detector of off-line to measure testing wafer, so need not that testing wafer is brought back exposure bench measures, thereby improve exposure bench utilize the time promoting production capacity, and the project and the frequency of the maintenance of minimizing cycle.
3. because the focal length of all kinds of exposure benchs utilizes same detector to measure, therefore unified metering system.Because all kinds of exposure benchs compare with same benchmark and same metering system, can correctly judge the focal length relevance between all kinds of boards.When the production capacity of certain exposure bench is not enough, can call other boards usually and support, and quantitative focal length relevance data is can be as all kinds of exposure benchs interchangeable basis for estimation whether.
The present invention can use the automatic feedback of above-mentioned feedback mechanism in exposure bench to proofread and correct, avoid artificial proofread and correct the careless mistake that may cause.
5. in above-mentioned photoetching making technology, can carry out the exposure of a plurality of projected areas, be convenient to obtain a large amount of focometry results.
Though disclosed the present invention in conjunction with above preferred embodiment; yet it is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; can do some change and retouching, so protection scope of the present invention should be with being as the criterion that claim was defined.
Claims (20)
1. a photomask is applicable to the correction of exposure bench, and this photomask comprises:
One transparent substrates; And
At least two proofread and correct pattern, are configured on this transparent substrates, and respectively this correcting pattern comprises:
One identification icon, this identification icon has symmetry;
One contrast pattern is configured in around this identification icon;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one first pair in a first party;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one second pair in a second party.
2. a photomask is applicable to the correction of exposure bench, and this photomask comprises:
One transparent substrates; And
At least two proofread and correct pattern, are configured on this transparent substrates, and respectively this correcting pattern comprises:
One identification icon, this identification icon has symmetry;
One contrast pattern is configured in around this identification icon;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one first pair in a first party;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one second pair in a second party;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one the 3rd pair a third party; And
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one the 4th pair in a four directions.
3. photomask as claimed in claim 1 or 2, wherein this identification icon comprises square and octagon.
4. photomask as claimed in claim 3, wherein the area of this identification icon is at least 100 square microns.
5. photomask as claimed in claim 1, wherein the live width of these the first couple correction lines and this second couple correction lines is 0.1~0.2 micron.
6. photomask as claimed in claim 2, wherein these the first couple correction lines, this second couple proofread and correct lines, the 3rd pair of live width of proofreading and correct lines and the 4th pair of correction lines is 0.1~0.2 micron.
7. photomask as claimed in claim 1 or 2 wherein has 9 correcting patterns on this transparent substrates, and those correcting patterns with one first spacing cross direction profiles on this transparent substrates, and vertically be distributed on this transparent substrates with one second spacing.
8. photomask as claimed in claim 1 or 2, wherein this identification icon and this contrast patterns one of them be a printing opacity pattern, and another is a light tight pattern.
9. photomask as claimed in claim 1 or 2, wherein the width of this contrast patterns is at least 3 microns.
10. the method for a correcting exposure machine comprises:
One photomask is provided, and this photomask comprises a transparent substrates and is positioned at least two on this transparent substrates proofreaies and correct pattern, and wherein respectively this correcting pattern comprises:
One identification icon, this identification icon has symmetry;
One contrast pattern is configured in around this identification icon;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one first pair in a first party;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one second pair in a second party;
Utilize this photomask, one testing wafer is carried out a photoetching making technology, to obtain a plurality of photoengraving patterns of corresponding those correcting patterns at an exposure bench;
Utilize a detector to measure the total length of those photoengraving patterns respectively, to obtain most numerical value in this first direction and this second direction;
With those numerical value with compare by the numerical value that total length obtained of those correcting patterns respectively in this first direction and this second direction, to obtain a comparative result; And
Utilize this comparative result that this exposure bench is proofreaied and correct.
11. the method for a correcting exposure machine comprises:
One photomask is provided, and this photomask comprises a transparent substrates and is positioned at least two on this transparent substrates proofreaies and correct pattern, and wherein respectively this correcting pattern comprises:
One identification icon, this identification icon has symmetry;
One contrast pattern is configured in around this identification icon;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one first pair in a first party;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one second pair in a second party;
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one the 3rd pair a third party; And
Proofread and correct lines, be configured in around this contrast patterns, and extend upward for one the 4th pair in a four directions.
Utilize this photomask, one testing wafer is carried out a photoetching making technology, to obtain most photoengraving patterns of corresponding those correcting patterns at an exposure bench;
Utilize a detector measure respectively those photoengraving patterns in this first direction, this second direction, this third direction and this four directions to total length, to obtain most numerical value;
With those numerical value with respectively by those correcting patterns in this first direction, this second direction, this third direction and this four directions to the numerical value that total length obtained compare, to obtain a comparative result; And
Utilize this comparative result that this exposure bench is proofreaied and correct.
12. as the method for claim 10 or 11 described correcting exposure machines, wherein this detector comprises the detector of an off-line (Off-Line), this detector comprises a microscope.
13. as the method for claim 10 or 11 described correcting exposure machines, wherein utilizing this comparative result that this exposure bench is proofreaied and correct is to utilize a feedback (feedback) mechanism, with the automatic feedback of this comparative result in this exposure bench to proofread and correct.
14. as the method for claim 10 or 11 described correcting exposure machines, wherein this identification icon comprises square and octagon.
15. the method for correcting exposure machine as claimed in claim 14, wherein the area of this identification icon is at least 100 square microns.
16. the method for correcting exposure machine as claimed in claim 10, wherein the live width of these the first couple correction lines and this second couple correction lines is 0.1~0.2 micron.
17. the method for correcting exposure machine as claimed in claim 11, wherein these the first couple correction lines, this second couple proofread and correct lines, the 3rd pair of live width of proofreading and correct lines and the 4th pair of correction lines is 0.1~0.2 micron.
18. method as claim 10 or 11 described correcting exposure machines, wherein have 9 correcting patterns on this transparent substrates, and those correcting patterns, and vertically are distributed on this transparent substrates with one second spacing on this transparent substrates with one first spacing cross direction profiles.
19. as the method for claim 10 or 11 described correcting exposure machines, wherein this identification icon and this contrast patterns one of them be a printing opacity pattern, and another is a light tight pattern.
20. as the method for claim 10 or 11 described correcting exposure machines, wherein the width of this contrast patterns is at least 3 microns.
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CNA2005100919680A CN1916758A (en) | 2005-08-15 | 2005-08-15 | Method for photo mask, and correcting exposure machine |
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CNA2005100919680A CN1916758A (en) | 2005-08-15 | 2005-08-15 | Method for photo mask, and correcting exposure machine |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102540758A (en) * | 2011-11-29 | 2012-07-04 | 上海华力微电子有限公司 | Method for matching different photolithography coating devices in same photolithography process |
CN103076715A (en) * | 2012-12-20 | 2013-05-01 | 上海宏力半导体制造有限公司 | Mask plate and exposure equipment optimal-focal distance monitoring method |
CN105204299A (en) * | 2015-10-14 | 2015-12-30 | 上海华力微电子有限公司 | Graphic structure for aligning precise measurement |
CN111354714A (en) * | 2018-12-21 | 2020-06-30 | 夏泰鑫半导体(青岛)有限公司 | Alignment mark system |
-
2005
- 2005-08-15 CN CNA2005100919680A patent/CN1916758A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102540758A (en) * | 2011-11-29 | 2012-07-04 | 上海华力微电子有限公司 | Method for matching different photolithography coating devices in same photolithography process |
CN103076715A (en) * | 2012-12-20 | 2013-05-01 | 上海宏力半导体制造有限公司 | Mask plate and exposure equipment optimal-focal distance monitoring method |
CN103076715B (en) * | 2012-12-20 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | The monitoring method of mask plate, exposure sources pinpointed focus |
CN105204299A (en) * | 2015-10-14 | 2015-12-30 | 上海华力微电子有限公司 | Graphic structure for aligning precise measurement |
CN111354714A (en) * | 2018-12-21 | 2020-06-30 | 夏泰鑫半导体(青岛)有限公司 | Alignment mark system |
CN111354714B (en) * | 2018-12-21 | 2022-02-15 | 夏泰鑫半导体(青岛)有限公司 | Alignment mark system |
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