CN1516887A - Hollow anode plasma reactor and method - Google Patents
Hollow anode plasma reactor and method Download PDFInfo
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- CN1516887A CN1516887A CNA028120949A CN02812094A CN1516887A CN 1516887 A CN1516887 A CN 1516887A CN A028120949 A CNA028120949 A CN A028120949A CN 02812094 A CN02812094 A CN 02812094A CN 1516887 A CN1516887 A CN 1516887A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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Abstract
The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.
Description
Technical field
The present invention relates to the manufacturing of integrated circuit, and be specifically related to remove apparatus and method for from the material on surface.
Background technology
Do processing at quarter (dry etch) and can be used for semiconductor wafer processing, or, remove material from the film of accumulation on the wafer by being exposed to plasma with the material of removing from wafer surface.Plasma is an electric neutrality, the material of partial ionization state.Etch reactor is not only produced plasma, and provides to a certain degree control to appearing at chemistry on wafer or the film or physical reactions.By etch processes, material surface of wafer or film from etching area is eliminated to form outline or the dimension that part limits circuit element.
In known plasma reactor, plasma produces with the space near wafer, and the plasma expansion is to be full of major part or whole reative cell spaces.The all surfaces that plasma contacts with plasma interacts.In the outside near die space, the plasma wall interacts and can produce unwanted result, such as the spraying plating of wall material, or more generally on wall or near the accumulation of wall.When the thickness of the accumulation of wall increased along with continuing to handle, the accumulation of wall can be peeled off and be caused particle contamination.In addition, have different electronics and chemical property, how to interact with wall so this accumulation can change plasma because the accumulation of wall and wall itself are compared, and through causing the variation of plasma properties after a while.Therefore, the accumulation of wall must periodically be removed.Carry out plasma cleaning on the spot and be preferred, but because some plasma walls are interactional low-yield, normally difficulty or very slow.Like this, need the manual removal of reactor usually, it has increased running cost and has reduced system throughput.
Fig. 1 shows the side view of section of the plasma reactor of prior art.This equipment uses the chamber housing 110 that has formed reactor or chamber 100.First electrode 112 is placed in the top of housing 110.As shown in the figure, first electrode 112 is electrically connected to ground 134 with housing 110.Second electrode 114 is placed in the bottom of housing 110, relatively and be parallel to upper electrode 112.Second electrode 114 is by dead ring 116 and housing 110 electrical isolation.Etched substrate or wafer 118 are placed on the inner surface of second electrode 114, and it disposes apparatus for fastening and/or cooling device usually.Wafer 118 is centered on by the thin plate 120 by the insulating material manufacturing such as quartz.
Etchant gasses is provided to reactor 100 by etchant gasses supply 122 with supply line 124.Supply line 124 is connected to reactor 100 etchant gasses is delivered to the inside of reactor 100 by first electrode 112 through opening.The pressure that reduces remains in the reactor 100 by vacuum pump 128, and this vacuum pump 128 is connected to reactor 100 by vacuum tube 126.Radio frequency (RF) power is provided to second electrode 114 by RF power supply 130 and resistance fit network 132.
In the reactor 100 pressure of the suitable minimizing of etchant gasses and with suitable RF power application to second electrode 114, form in the target space 146 of plasma between first electrode 112 and second electrode 114, and expand to the space 142 of first and second electrode 112 and 114 outsides.Plasma gas in space 142 can interact with the interior wall 144 of the exposure of chamber housing 110.
Miscellaneous equipment has attempted to limit the plasma near wafer 118.Some known devices adopt two or more annular rings 150, and it is directly adjacent to the target space 146 that is similar between two parallel circle disc electrodes shown in Figure 2.A plurality of annular rings 150 join the reactor 100 of Fig. 1, and annular ring 150 is full of between top electrode 112 and the following electrode 114 space near their periphery.Annular ring 150 is by the non-conducting material manufacturing such as quartz, and annular ring 150 has little opening 152 between them.Opening 152 allows gas to flow to space outerpace 148 from middle electrode space 146, and flow to vacuum pump 128 then.Enough narrow of this opening 152, and the width of annular ring 150 is enough wide, makes by little opening 152, has the remarkable loss of flow conductance.This flow conductance loss causes the pressure differential between target space 146 and the space outerpace 148.Because narrow opening 152 and the very low pressure that is present in the space outerpace 148, therefore the plasma that causes in target space 146 is limited in the target space 146.
The processing window that the said method of article on plasma body restriction can be limited.Under lower plasma operations pressure, less than 60 millitorrs (millitorr), the effect of annular ring 150 can not be set up useful pressure drop usually usually.In addition, in the example of plasma confinement body, the low-flow conduction that is caused by annular ring 150 limits the air-flow ratio that may be utilized therein.
If plasma can be limited to the space near wafer, then obtain some advantages, comprise the Treatment Stability of enhancing and the system maintenance of repeatability and minimizing.Therefore, need a kind of equipment and a kind of method, it confines a plasma in the space near wafer, and does not limit the air-flow ratio and/or the pressure of this apparatus and method for significantly.
Description of drawings
In the drawings, identical reference number is indicated the corresponding components of whole figure.
Fig. 1 is the side view of section of the reactor of prior art.
Fig. 2 is the side view of section of the reactor of second prior art.
Fig. 3 is the side view of section of currently preferred embodiment.
Fig. 4 is the cutaway top view along the line 2-2 of Fig. 3.
Fig. 5 is the FB(flow block) of Fig. 3.
Fig. 6 is the side view of section of optional currently preferred embodiment.
Fig. 7 is the side view of section of the second optional currently preferred embodiment.
Fig. 8 is the side view of section of the 3rd optional currently preferred embodiment.
Fig. 9 is the cutaway top view along the line A-A of Fig. 8.
Figure 10 is the cutaway top view along the line A-A of the optional currently preferred embodiment of Fig. 8.
Embodiment
The currently preferred embodiment of the apparatus and method for of the present invention that is described below confines a plasma in the space near wafer, and the surf zone of minimized and plasma interaction.Currently preferred embodiment also provides the high conduction of facing gas flow outside the target space.Current preferred apparatus and method for utilizes method for limiting, and this method is limited in electric field the plasma zone of chamber in fact.Current preferred apparatus and method for can be the integral part of many plasma process systems or be integrated in many plasma process systems.Current preferred apparatus and method in fact the minimum plasma wall interaction, reduce system maintenance, improve the change of the stability handled and minimizing system to system.
With reference to Fig. 3 and Fig. 4, this evaluation method selecting optimal equipment ground adopts the chamber housing 202 that has formed reactor or chamber 200.First electrode 210 is placed in the top of chamber housing 202.In a currently preferred embodiment, first electrode 210 can have disc and be made by silicon (Si) or carborundum (SiC), preferably has the resistivity less than 1 ohm/cm (ohm/cm).First electrode 210 is electrically connected to ground 254 with chamber housing 202.Second electrode 220 is placed in the bottom of chamber housing 202, relatively also is parallel to first electrode 210 in fact.Second electrode 220 preferably has disc.In preferred embodiment alternatively, first electrode 210 and second electrode 220 can be taked many other shapes, and by many other made.Separating between first electrode 210 and second electrode 220 can be regulated preferably manual or automatically.Second electrode 220 is preferably isolated with chamber housing 202 electricity by dead ring 230, and this dead ring 230 is by such as quartzy (SiO
2) or alundum (Al (Al
2O
3) and so on non-conductive solid material manufacturing.Etched substrate or wafer 232 support that on the inside face of second electrode 220 or surface this second electrode 220 preferably disposes wafer 232 is clipped to the device on inner surface and the device that is used for the temperature of control wafer 232.This device that is used to clamp and control temperature can comprise, but be not limited to, second electrode 220 of electrostatic chuck and liquid cooling jointly uses with helium (He) gas that is placed between the wafer 232 and second electrode 220, to improve the pyroconductivity coefficient between the wafer 232 and second electrode 220.By such as quartzy (SiO
2) and so on the focusing ring 234 of insulating material manufacturing preferably surround wafer 232.In preferred embodiment alternatively, focusing ring 234 can comprise two inner loop made from approaching rings, by silicon (Si) or carborundum (SiC) in fact with one heart and by quartzy (SiO
2) external rings made.At other alternatively in the preferred embodiment, focusing ring 234 can have many other shapes and can be by many other made.
Etchant gasses is provided to reactor 200 by etchant gasses supply 240 with supply line 242.Supply line 242 preferably is connected to chamber 200 by first electrode 210 through one or more openings, so that etchant gasses is evenly dispersed in the target space 260.Gas is 200 discharges from the chamber, and vacuum pressure is kept by vacuum pump 246.Vacuum pump 246 preferably is connected to reactor by vacuum tube 244.Radio frequency (RF) power preferably is provided to second electrode 220 by resistance fit network 252 by the RF power supply 250 that is connected to second electrode 220.
The external margin of first electrode 210 preferably protrudes downwards, and 260 formation cylindrical wall or " shieldings " 212 around the target space.Shielding 212 preferably has bottom surface portions 262, and it is in fact adjacent to the one side of focusing ring 234 or the upper limb 208 of chamber 200.The bottom surface portions 262 of shielding 212 is electrically connected with the upper limb 208 of chamber 200.When than from RF power supply 250 wall 204 by chamber 200 to ground 254 ground conducting paths, be electrically connected preferably set up from the wall 204 of RF power supply 250 by chamber 200 to ground 254 optional Yu shorter RF conductive path.This shielding 212 minimizes the electric field that is enclosed in the outside cabin space 206 with magnetic field intensity and improve plasma and limit.
A plurality of holes or vertical in fact groove 214 are preferably disposed in shielding 212, and described groove 214 passes completely through or passes through shielding 212, and the etchant gasses in the target space 260 can be discharged.Vertical in fact groove 214 preferably vertical orientation and width is approximately 0.8 to 3.0 millimeter.In optional preferred embodiment, vertical in fact groove 214 can be taked many other shapes and have many other width.
Number, shape and the size of vertical in fact groove 214 and shield preferably selected air-flow specific conductance or the gas residence time in target space 260 of 212 thickness needing to obtain, yet, plasma is restricted.In this preferred embodiment, vertical in fact groove 214 comprises 180 vertical in fact grooves, and about 2.5 mm wides are approximately the total length of 20 millimeters target openings.The thickness of the wall of shielding 212 is approximately 6 millimeters.In other preferred embodiment, the number of opening, shape and size can change, and can change as the thickness that shields 212.
The suitable stress level place of the etchant gasses in target space 260 and foundation are to the application of the suitable RF power of second electrode 220, and plasma forms in target space 260.Plasma conductively-closed 212 preferably limits, and the interaction of plasma surface is limited in zone relatively little and that clearly limit.In can the exemplary embodiment of the about 200 millimeters wafers of etching, shielding 212 preferably has at about 14 height in about 25 millimeters scopes.Shielding 212 inside diameter (ID) is approximately 220 millimeters, and shields 212 outer dia (OD) and be approximately 235 millimeters.Vertical in fact groove 214 have about 2.0 millimeters width and general per 2.0 degree separately about 12 to about 24 millimeters length.In these exemplary embodiments, first electrode 210 comprises silicon (Si) or carborundum (SiC) with single shielding 212.And, used 3000Watt 27MHz RF power supply in conjunction with 3000Watt 2MHz RF power supply.In other preferred embodiment, but comprise these embodiment of about 200 millimeters and/or about 300 millimeters wafers of etching, can change: the width of vertical in fact groove, diameter and size and the material that is used to make shielding 212.And, also can change frequency and RF power level.
In operation, step 502 place as described in Figure 5, wafer 232 is placed on the face of the inner surface or second electrode 220.At step 504 place, chamber 200 is drained.The device that is used to clamp is clamped ring or electrostatic charge such as wafer, and wafer 232 is fixed to second electrode 220.At step 506 place, provide processing gas by distribution source 240.Handle gas and enter target space 260 by gas supply line 242 and the distributing equipment such as shower nozzle.Ratio by the ratio and/or the gas of the introducing of control and treatment gas are removed obtains optional pressure in the target space 260.Pump such as oil-sealed rotary pump (turbine pump) is removed from middle electrode space 260 by exhaust outlet and vacuum tube 244 and is handled gas.
RF power preferably is applied to second electrode 220, and it is created the high energy electric field and produces plasma at step 508 place in target space 260.After this, at step 510 place, react on the surface of the exposure of plasma and wafer 232.It should be noted that: the operation shown in Fig. 5 can rearrange and/or can comprise extra operation before the step that illustrates or later on.
Preferably, shielding 212 stops being formed on the electric field in the target space 260 in fact, and this has prevented that electric field from passing from outside cabin space 206.Vertical in fact groove 214 can the pressure loss with minimum flow processing gas between target space 260 and vacuum tube 244 in shielding 212, to obtain high gas flow ratio at reduction process pressure place.
In some exemplary embodiments, near the electric field the wafer 232 is revised in shielding 212 effectively, and revises and handle.In some oxide etch applications, for example, shielding 212 increases the etching ratio in the outer rim of wafer 232.An advantage of this preferred embodiment is: can access the etching ratio uniformity through the improvement of wafer 232.
Set the electric field of periphery that shielding 212 stops having close the target space 260 of limited prevention gas flow in fact, shield 212 and comprise any structure that obtains this function.Therefore, shielding 212 is not limited to only have the structure of container of vertical in fact groove 214.In optional preferred embodiment, shielding 212 comprises the groove of level in fact, and it is parallel to the face or the inner surface of first electrode 210 and second electrode 220 in some instances in fact.Shielding 212 also can comprise perforation, opening and/or any other suitable arrangement and evenly or the combination in the hole of nonuniform section, groove, opening, track etc., makes to handle gas and can be from middle electrode space 260 to vacuum tube 244 flow.Shielding 212 preferably obtains maximum gaseous conductance coefficient.And because shielding is 212 at the earthing potential place, therefore the size of first electrode 210 can descend and not have to change the electricity condition of the plasma of formation in target space 260 in fact.
By above description, it is evident that: shielding 212 can be the integrated part of first electrode 210 or separate but be electrically connected to first electrode 210.Shielding is 212 preferably removable, even show when apparatus and method for during in operation, shields 212 and also can manually or automatically improve or reduce with respect to second electrode 220.As shown in Figure 6, shielding 212 physically separates with first electrode 210, and machinery and be connected electrically to plate 217.Three or more pickers 218 are connected to plate 217 fifty-fifty, and promote the raising and the reduction of shielding 212.Six or more compliant conductive bands 219 preferably provide being electrically connected between plate 217 and the chamber 200.In a preferred embodiment, when shielding 212 moved to minimum position, low surperficial 216 of shielding 212 was carried out machinery with the upper limb 208 of chamber 200 and is contacted with electric.When with the wall 204 that comprises chamber 200 from RF power supply 250 to ground 254 RF return path relatively the time, these contacts create from RF power supply 250 to ground 254 optional Yu shorter RF return paths.Be connected to ground 254 shorter conducting path and minimize electric field and magnetic field intensity in the outside cabin space, and improve the plasma restriction.
As shown in Figure 7, shielding 212 can also physically separate with first electrode 210, and the Lower Half of machinery and the chamber 200 that is connected electrically to close second electrode 220.Shielding 212 bottom surface 216 preferably machinery be connected electrically to conducting ring 213.Conducting ring 213 is machinery and the upper limb 208 that is connected electrically to chamber 200 preferably.
Fig. 8 has described the another kind preferred embodiment alternatively that is sealed in the shielding 450 in the plasma reactor in conjunction with two independent RF power electrodes.This reactor can be called " triode " (2 RF power electrodes and 1 earthed surface).With reference to Fig. 8, Fig. 9 and Figure 10, triode reactor 400 comprises chamber 402, top electrode 410 and following electrode 420.Chamber 402 preferably is connected electrically to electrical grounding 448.Top electrode 410 is preferably isolated with chamber 402 electricity by top dead ring 414.Top electrode 410 preferably has the plate 412 of machinery silicon (Si), carborundum (SiC) or other suitable material surperficial with being connected electrically to 402 inside, chamber.Top electrode 410 is connected to RF power supply 444 by resistance fit network 446.
Below electrode 420 preferably isolate by following dead ring 422 with chamber 402 electricity, and preferably in conjunction with being used for machinery or electric maintenance and the device that as above is placed on 420 inner lip-deep substrates of following electrode or wafer 424 is described in cooling.The focusing ring 426 that comprises electrical insulating material is preferably located in around the wafer 424.RF power is provided to following electrode 420 by RF power supply 440 and resistance fit network 442.
Etchant gasses relies on etchant gasses supply 430 to be provided to reactor 400 with supply line 432.This supply line 432 preferably is connected to reactor 400 by the one or more openings through top electrode 410, thereby etchant gasses is delivered to target space 460 equably.Gas is discharged from reactor 400, and by vacuum pump 434, keeps vacuum level in chamber 402, and described vacuum pump 434 is connected to reactor 400 by vacuum tube 436.
Shielding 450 preferably is placed in the annular space around the following electrode 420, so that shields 450 and form between the space 404 in target space 460 and the Lower Half that is placed on chamber 402 and shield.Shielding 450 preferably machinery be electrically connected shielding around 450 inside and the chamber 402 at exterior periphery place.Shielding 450 preferably includes a plurality of grooves or hole 452, wherein handle gas and can easily pass through these grooves or hole, but the size in groove or hole 452 enough terminates in the whole electric fields that form in the plasma space 460 effectively, so that does not have electric field in the part below chamber 402 404 in fact.The width of these grooves 452 is preferably about 0.8 to about 3.0 millimeters, and to shield 450 thickness be about 6 to about 12 millimeters.The direction of groove 452 can be radially, tangential or any other suitable direction is extended.
Shown in Fig. 9 and 10, shielding 450 corresponding radially with extension slot tangentially aim at respectively overlay 454 radially with extension slot 456 tangentially.Shown in Fig. 9 and 10, although alternatively in the preferred embodiment, shielding 450 can be the assembly that separates with overlay 454, and shielding 450 also can be the integrated part of overlay 454.The groove 456 of overlay 454 is preferably aimed at the groove 452 of shielding 450.Overlay 454 is preferably by silicon (Si), carborundum (SiC) or other suitable made.
Some of many forms that the present invention can adopt have only been described in above-mentioned detailed explanation, and therefore, and above-mentioned detailed explanation should be used as exemplary but not determinate.Only following claim also comprises that whole equivalent purposes is to limit scope of the present invention.
Claims (42)
1. apparatus for processing plasma comprises:
Electrical grounding;
Be connected to the vacuum chamber of electrical grounding;
Be placed on first electrode in the vacuum chamber, it has the basic plane surface in the face of the internal vacuum chamber that is connected to electrical grounding;
Be placed on second electrode in the vacuum chamber, its have near and be parallel to the basic plane surface of first electrode;
Be connected to the power supply of second electrode; And
Tankage, be placed on the periphery of first and second electrode perimeter in the vacuum chamber, this tankage seals the space between first and second electrode, and this tankage comprises a shielding, this shielding has a plurality of openings, is used to promote gas flow and is electrically connected to electrical grounding.
2. apparatus for processing plasma as claimed in claim 1, wherein tankage comprises the integrated part of first electrode.
3. apparatus for processing plasma as claimed in claim 1, wherein tankage comprises the integration section of first electrode.
4. apparatus for processing plasma as claimed in claim 1, wherein tankage is placed adjacent to second electrode.
5. apparatus for processing plasma as claimed in claim 1, wherein the opening in the tankage comprises vertical in fact groove.
6. apparatus for processing plasma as claimed in claim 1, wherein a plurality of openings in the tankage comprise the groove of level in fact.
7. apparatus for processing plasma as claimed in claim 1, wherein tankage is with respect to the adjustable placement of second electrode so that tankage can be more near moving with the plane surface of second electrode further away from each other.
8. etching machines comprises:
Electrical grounding;
Be connected to the plasma chamber of electrical grounding;
Be connected to the vacuum pump of plasma chamber;
Be connected to the processing gas source of plasma chamber;
First electrode has the basic plane surface in the face of the inside of plasma chamber, and is connected to electrical grounding;
Second electrode has the basic plane surface of facing and being parallel to first electrode;
Be connected to the power supply of second electrode;
Be placed on the target zone between first and second electrode; And
Tankage, in the indoor sealing of plasma and be electrically connected to first electrode, this tankage has a plurality of grooves, be used to promote gas between target zone and flow path, to flow, this flow path stops in the input of vacuum pump, and this tankage has the conduction portion that in fact electric field is limited to the target zone.
9. etching machines as claimed in claim 8, wherein the groove of tankage is included in the vertical in fact groove that extends between the basic plane surface of first and second electrode.
10. etching machines as claimed in claim 8, wherein the groove of tankage comprises the groove of level in fact.
11. etching machines as claimed in claim 8, wherein tankage is used to confine a plasma in the tankage.
12. etching machines as claimed in claim 8, wherein tankage is mechanically connected to first electrode.
13. etching machines as claimed in claim 8, wherein tankage comprises the integrated part of first electrode.
14. etching machines as claimed in claim 8, wherein tankage is used to confine a plasma in the target zone, and gas flow between minimal restriction target zone and the holding chamber space.
15. etching machines as claimed in claim 8, wherein flow path is also by the wall of interior chamber and exhaust outlet restriction.
16. etching machines as claimed in claim 8, wherein tankage is placed around the periphery of first electrode.
17. etching machines as claimed in claim 8, wherein tankage is placed around the periphery of first and second electrode.
18. etching machines as claimed in claim 8, wherein groove has uniform cross-sectional area.
19. etching machines as claimed in claim 8, wherein groove has non-uniform cross-sections.
20. etching machines as claimed in claim 8, wherein power supply is a radio frequency power supply.
21. etching machines as claimed in claim 8, wherein power supply is two radio frequency power supplies with different radio frequency level.
22. etching machines as claimed in claim 21, wherein the frequency level of two radio frequency power supplies is respectively 2 megahertzes (MHz) and 27 megahertzes (MHz).
23. etching machines as claimed in claim 8, wherein the surface of first electrode comprises silicon.
24. etching machines as claimed in claim 23, wherein the resistivity of silicon is less than about 1 ohm/cm.
25. etching machines as claimed in claim 8, wherein the surface of first electrode comprises carborundum.
26. etching machines as claimed in claim 25, wherein the resistivity of carborundum is less than about 1 ohm/cm.
27. an etching machines comprises:
Electrical grounding;
Be connected to the plasma chamber of electrical grounding;
Be connected to the vacuum pump of plasma chamber;
Be connected to the processing gas source of plasma chamber;
First electrode has the surface in the face of the inside of plasma chamber;
Second electrode has the surface in the face of the inside of plasma chamber, and this plasma chamber is near also being parallel to first electrode in fact;
Be connected to first power supply of first electrode;
Be connected to the second source of second electrode;
Be placed on the target zone between first and second electrode; And
Tankage, in the indoor sealing of plasma and be electrically connected to electrical grounding, this tankage has a plurality of grooves, be used to promote gas to flow between target zone and vacuum pump, and this tankage has the current-carrying part that in fact electric field is limited to the target zone.
28. etching machines as claimed in claim 27 also comprises vacuum line, wherein tankage comprises adjacent to the placement of second electrode, with the circular device of target zone from the vacuum line separation.
29. etching machines as claimed in claim 27, wherein the groove of tankage comprises the groove that in fact radially extends.
30. etching machines as claimed in claim 27, wherein the groove of tankage comprises the tangential in fact groove that extends.
31. etching machines as claimed in claim 27, wherein tankage is used for plasma is limited in the target zone electricly.
32. etching machines as claimed in claim 27, wherein tankage is mechanically connected to plasma chamber.
33. etching machines as claimed in claim 27, wherein tankage is used for the plasma confinement body, and gas flow between minimal restriction target zone and the holding chamber space.
34. etching machines as claimed in claim 27, wherein groove has uniform cross-sectional area.
35. etching machines as claimed in claim 27, wherein groove has non-uniform cross-sections.
36. etching machines as claimed in claim 27, wherein power supply comprises the radio frequency power supply more than.
37. etching machines as claimed in claim 27, wherein first and second power supply comprises two radio frequency power supplies that are tuned to the different radio frequency.
38. etching machines as claimed in claim 36, wherein first power supply is tuned to 27 megahertzes, and second source is tuned to 2 megahertzes.
39. a method of handling substrate comprises:
Substrate is placed on the base support in the plasma chamber, wherein tankage is used for plasma is limited in the target zone above the substrate electricly, and in fact gas flow there is seldom resistance, the target zone above the tankage sealing substrate and be electrically connected to ground;
By vacuum pump emptying plasma chamber;
By supply line, will handle gas and be provided to the target zone, this processing gas is mechanically introduced to move from middle electrode zone by tankage; And
By electric field being applied to the target zone, energized process gas becomes plasma.
40. method as claimed in claim 39, wherein tankage comprises loop configuration, and this loop configuration comprises the conductive walls with vertical in fact groove, and vertical in fact groove is through conductive walls.
41. method as claimed in claim 39 also comprises the material of etching from the exposed surface of substrate.
42. method as claimed in claim 39 also comprises the material accumulation to the exposed surface of substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR09/859,091 | 2001-05-16 | ||
| US09/859,091 US6974523B2 (en) | 2001-05-16 | 2001-05-16 | Hollow anode plasma reactor and method |
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| CN2008100995866A Division CN101290873B (en) | 2001-05-16 | 2002-05-14 | Hollow anode plasma reactor and method |
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| CN1516887A true CN1516887A (en) | 2004-07-28 |
| CN100401450C CN100401450C (en) | 2008-07-09 |
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| CNB028120949A Expired - Lifetime CN100401450C (en) | 2001-05-16 | 2002-05-14 | Hollow anode plasma reactor and method |
| CN2008100995866A Expired - Lifetime CN101290873B (en) | 2001-05-16 | 2002-05-14 | Hollow anode plasma reactor and method |
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| US (3) | US6974523B2 (en) |
| CN (2) | CN100401450C (en) |
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| WO (1) | WO2002093616A1 (en) |
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| CN102067737A (en) * | 2008-06-23 | 2011-05-18 | 应用材料公司 | Cathode with inner and outer electrodes at different heights |
| CN102067737B (en) * | 2008-06-23 | 2014-10-01 | 应用材料公司 | Cathode with inner and outer electrodes at different heights |
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| CN104733275A (en) * | 2013-12-19 | 2015-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma process device |
| CN104733275B (en) * | 2013-12-19 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing tool |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100401450C (en) | 2008-07-09 |
| WO2002093616A1 (en) | 2002-11-21 |
| US20020170881A1 (en) | 2002-11-21 |
| US8465620B2 (en) | 2013-06-18 |
| CN101290873A (en) | 2008-10-22 |
| US20060027328A1 (en) | 2006-02-09 |
| CN101290873B (en) | 2010-12-08 |
| TWI283425B (en) | 2007-07-01 |
| US6974523B2 (en) | 2005-12-13 |
| US20080271849A1 (en) | 2008-11-06 |
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