CN114068836B - OLED device and display panel - Google Patents
OLED device and display panel Download PDFInfo
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- CN114068836B CN114068836B CN202111358584.6A CN202111358584A CN114068836B CN 114068836 B CN114068836 B CN 114068836B CN 202111358584 A CN202111358584 A CN 202111358584A CN 114068836 B CN114068836 B CN 114068836B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 150000002739 metals Chemical class 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 9
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 abstract description 8
- 229910001416 lithium ion Inorganic materials 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000000969 carrier Substances 0.000 abstract description 5
- 206010037211 Psychomotor hyperactivity Diseases 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 74
- 229910052744 lithium Inorganic materials 0.000 description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/166—Electron transporting layers comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the disclosure provides an OLED device and a display panel, wherein the OLED device at least comprises: CGL, wherein the CGL comprises: the electronic transmission layer ETL comprises a plurality of electronic transmission layers ETL and a plurality of insulating layers, wherein the upper layer and the lower layer adjacent to each ETL are insulating layers, the ETL and the insulating layers are sequentially overlapped and distributed, active metals are doped in the ETL, and the arranged plurality of ETLs are distributed according to the active metal doping concentration with gradient. According to the embodiment of the disclosure, the insulating layers are arranged on the upper layer and the lower layer adjacent to each layer of ETL, the problem of service life reduction of a device caused by lithium ion diffusion is fundamentally solved, the multi-layer ETL is arranged according to active metal doping concentrations with gradients, the active metal doping concentrations of different layers of ETL can be adjusted according to requirements, sufficient carriers are ensured, the problem of transverse electric leakage caused by transverse movement of lithium ions due to overactivity is prevented, and the stability of the device is high.
Description
Technical Field
The disclosure relates to the field of display, and in particular relates to an OLED device and a display panel.
Background
When an electric current flows through an Organic Light-Emitting diode (OLED), holes generated by the positive electrode and electrons generated by the negative electrode are recombined in the Light-Emitting layer and emit Light, and photons with different energies can be emitted according to different excitation energies, so that the Light with different colors corresponds to the Light with different colors. The organic light-emitting display panel using the OLED device as a display material has the advantages of self-luminescence, wide viewing angle, high contrast ratio and the like, has the characteristics of light weight, thin thickness and bending resistance, and is widely applied to intelligent products of products such as mobile phones, televisions, notebook computers and the like.
In the stacked structure of the OLED, a CGL (charge generation layer, charge Generate Layer) structure is required to provide carriers for the upper and lower film layers, however, for the current display panel with high PPI (pixel density unit, pixels Per Inch), the corresponding CGL structure is formed by doping ETL (electron transport layer) with metal lithium, and the structure is a one-layer structure as shown in fig. 1, because the activity of the metal lithium is relatively large and adjacent Pixels are relatively close, the lateral leakage problem is very easy to occur, the stability of the device is low, and the service life of the device is also reduced due to the diffusion of lithium ions in the CGL.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide an OLED device and a display panel, which are used for solving the following problems in the prior art: the CGL structure of the current display panel with high PPI is formed by doping ETL with metal lithium, and because the activity of the metal lithium is relatively large and adjacent pixels are relatively close, the lateral electric leakage problem is very easy to occur, the stability of the device is relatively low, and the service life of the device is also reduced due to the diffusion of lithium ions in the CGL.
In one aspect, embodiments of the present disclosure provide an OLED device, including at least: a charge generation layer CGL, wherein the CGL comprises: the electronic transmission layer ETL comprises a plurality of electronic transmission layers ETL and a plurality of insulating layers, wherein the upper layer and the lower layer adjacent to each ETL are insulating layers, the ETL and the insulating layers are sequentially overlapped and distributed, active metals are doped in the ETL, and the arranged plurality of ETLs are distributed according to the doping concentration of the active metals with gradients.
In some embodiments, the insulating layer has a thickness less than or equal to 10nm.
In some embodiments, the material of the insulating layer comprises at least one of: aluminum oxide, silicon oxide, molybdenum trioxide, zinc oxide.
In some embodiments, the difference in active metal doping concentrations of any two adjacent ETLs is the same.
In some embodiments, the multiple layers of ETLs are arranged in a manner that the doping concentration of the active metal is reduced from the middle to the two sides in sequence, or the multiple layers of ETLs are arranged in a manner that the doping concentration of the active metal is reduced from high to low.
In some embodiments, in the three-layer ETL, the active metal doping concentration of the upper and lower ETLs is less than the active metal doping concentration of the middle ETL.
In some embodiments, the active metal doping concentration of the upper ETL and the lower ETL is 2% and the active metal doping concentration of the intermediate ETL is 4%.
In some embodiments, in a two-layer ETL, the active metal doping concentration of the upper ETL is greater than the active metal doping concentration of the lower ETL, where the upper ETL is the ETL on the side closer to the anode layer and the lower ETL is the ETL on the side closer to the cathode layer.
In some embodiments, the active metal doping concentration of the upper ETL is 4% and the active metal doping concentration of the lower ETL is 2%.
In another aspect, an embodiment of the present disclosure provides a display panel, including at least: an OLED device as described in any of the embodiments of the present disclosure.
According to the embodiment of the disclosure, the insulating layers are arranged on the upper layer and the lower layer adjacent to each layer of ETL, the problem of service life reduction of a device caused by lithium ion diffusion is fundamentally solved, the multi-layer ETL is arranged according to active metal doping concentrations with gradients, the active metal doping concentrations of different layers of ETL can be adjusted according to requirements, sufficient carriers are ensured, the problem of transverse electric leakage caused by transverse movement of lithium ions due to overactivity is prevented, and the stability of the device is high.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to a person of ordinary skill in the art.
Fig. 1 is a schematic diagram of a CGL structure of an OLED device provided in the related art;
fig. 2 is a schematic diagram of a CGL structure of an OLED device according to an embodiment of the disclosure;
FIG. 3 is a schematic view of a brightness intensity curve of a display panel according to an embodiment of the disclosure;
FIG. 4 is a detailed view of a brightness intensity curve of a display panel according to an embodiment of the disclosure;
fig. 5 is a schematic diagram of a CGL structure of an OLED device according to an embodiment of the disclosure;
fig. 6 is a schematic structural diagram of an OLED device according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed description of known functions and known components.
Embodiments of the present disclosure provide an OLED device, whose structure is schematically shown in fig. 2, at least including:
CGL, wherein the CGL comprises: the ETL and the insulating layers are sequentially overlapped and distributed, active metals are doped in the ETL, and the set multi-layer ETL is distributed according to the active metal doping concentration with gradient.
In particular, the active metal is usually lithium metal.
Current can flow transversely besides longitudinally, so that electric leakage is caused, and the embodiment of the disclosure is to increase a longitudinal potential barrier and further reduce transverse flow. In the case of illuminating red light, since lateral leakage occurs, current flows to the blue light emitting layer of the adjacent pixel through the CGL, resulting in light emission at a blue wavelength; as can be seen from the brightness intensity curves of the display panel shown in fig. 3 and 4 (fig. 4 is an enlarged view of the circled area in fig. 3), there is a significant difference between the intensity of CGL using the related art and the CGL of the present disclosure in the range around 480nm, and the leakage condition of the display panel is significantly improved when the intensity of the corresponding curve using the CGL of the present disclosure is significantly lower than that of the curve using the CGL of the related art.
According to the embodiment of the disclosure, the insulating layers are arranged on the upper layer and the lower layer adjacent to each layer of ETL, the problem of service life reduction of a device caused by lithium ion diffusion is fundamentally solved, the multi-layer ETL is arranged according to active metal doping concentrations with gradients, the active metal doping concentrations of different layers of ETL can be adjusted according to requirements, sufficient carriers are ensured, the problem of transverse electric leakage caused by transverse movement of lithium ions due to overactivity is prevented, and the stability of the device is high.
The CGL shown in fig. 2 consists of a two-layer ETL, which is only one example, and may also have three, four or even more ETLs.
For the two-layer ETL of fig. 2, the ETL may be arranged from high to low according to the active metal doping concentration, for example, the active metal doping concentration of the upper-layer ETL is greater than that of the lower-layer ETL, where the upper-layer ETL is the ETL near the anode layer side, and the lower-layer ETL is the ETL near the cathode layer side, so that the CGL can not only ensure sufficient carriers, but also reduce metal activity relative to the existing single-layer ETL. In specific implementation, the doping concentration of the active metal of the upper ETL may be 4%, and the doping concentration of the active metal of the lower ETL may be 2%.
For another example, for the three-layer ETL shown in fig. 5, the active metal doping concentrations with gradients may be sequentially reduced from the middle to the two sides, that is, in the three-layer ETL, the active metal doping concentrations of the upper-layer ETL and the lower-layer ETL are smaller than those of the middle-layer ETL, and those skilled in the art may set more gradients according to actual requirements. In particular, in order to make the ETL near the middle position have a high concentration of lithium doping concentration, the active metal doping concentration of the upper ETL and the lower ETL may be 2%, and the active metal doping concentration of the middle ETL may be 4%.
In the specific arrangement, the difference value of the doping concentration of the active metal of any two adjacent ETL layers is preferably the same.
For the above insulating layer, the thickness thereof may be set to be thin, and it is preferable that the thickness of the insulating layer is 10nm or less; the material of the insulating layer may be, for example, silicon oxide (SiO x ) Aluminum oxide (Al) 2 O 3 ) Molybdenum trioxide (MoO) 3 ) Metal oxides such as zinc oxide (ZnO).
The above-mentioned OLED device has other structures besides a CGL, for example, an OLED device schematic diagram shown in fig. 6, where the upper and lower layers of the CGL include other levels, that is, an HTL (hole transport layer), a Y-EML (yellow light emitting layer), an ETL (i.e., an electron transport layer without Li doping), and a captode (Cathode layer) in order, and the lower layer of the CGL includes an ETL, a B-EML (blue light emitting layer), an HTL, and an Anode layer in order. Of course, the structure shown in fig. 6 is only an example and is not limiting of the embodiments of the present disclosure. The blue light-emitting layer and the yellow light-emitting layer in fig. 6 can be mixed to form white light, the thickness of each organic material monolayer of the middle layers is generally 100-200A, the thickness of the cathode layer is generally 1000A, and the thickness of the whole device is 2000-3000A.
The following exemplifies the processing procedure of the CGL with three layers of ETL shown in fig. 5 described above, which includes the following procedures (1) to (5):
(1) Preparing a first insulating layer by using ALD equipment, wherein the material is Al 2 O 3 The thickness is less than 10nm.
Of course, the first insulating layer can also be prepared by CVD equipment, and the material is correspondingly selected to be SiO 2 That is, the ALD apparatus may be replaced with a CVD apparatus in the following process, and the process is not performedAnd (5) repeating the description.
(2) Preparing a first ETL (electronic toll collection) on the first insulating layer, and using evaporation equipment, wherein the material is ETL: li (ETL doped with metallic lithium), wherein Li concentration is < 2%.
(3) Preparing a second insulating layer by using ALD equipment, wherein the material is Al 2 O 3 The thickness is less than 10nm.
(4) Preparing a second ETL on the second insulating layer, and using evaporation equipment, wherein the material is ETL: li, wherein Li concentration is < 4%.
(5) Preparing a third insulating layer on the second ETL, and preparing by using ALD equipment, wherein the material is Al 2 O 3 The thickness is less than 10nm.
Through the above process, the CGL structure shown in fig. 5 can be obtained.
The insulating layer structure in the CGL comprises the inside of the CGL and two sides of the CGL, and the lateral leakage problem of the CGL in a high PPI design can be improved through the addition of the insulating layer; the insulating layer structures on two sides of the CGL block diffusion of Li, so that stability is improved; in CGL, the concentration gradient of Li in different areas is beneficial to improving the effect of CGL and improving the stability of Li diffusion.
The embodiment of the disclosure further provides a display panel including the above OLED device, which is not described herein again.
Furthermore, although exemplary embodiments have been described herein, the scope thereof includes any and all embodiments having equivalent elements, modifications, omissions, combinations (e.g., of the various embodiments across schemes), adaptations or alterations based on the present disclosure. Elements in the claims are to be construed broadly based on the language employed in the claims and are not limited to examples described in the present specification or during the practice of the present application, which examples are to be construed as non-exclusive. It is intended, therefore, that the specification and examples be considered as exemplary only, with a true scope and spirit being indicated by the following claims and their full scope of equivalents.
The above description is intended to be illustrative and not restrictive. For example, the above-described examples (or one or more aspects thereof) may be used in combination with each other. For example, other embodiments may be used by those of ordinary skill in the art upon reading the above description. In addition, in the above detailed description, various features may be grouped together to streamline the disclosure. This is not to be interpreted as an intention that the disclosed features not being claimed are essential to any claim. Rather, the disclosed subject matter may include less than all of the features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the detailed description as examples or embodiments, with each claim standing on its own as a separate embodiment, and it is contemplated that these embodiments may be combined with one another in various combinations or permutations. The scope of the disclosure should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
While various embodiments of the present disclosure have been described in detail, the present disclosure is not limited to these specific embodiments, and various modifications and embodiments can be made by those skilled in the art on the basis of the concepts of the present disclosure, and these modifications and modifications should be within the scope of the present disclosure as claimed.
Claims (10)
1. An OLED device comprising at least:
a charge generation layer CGL, wherein the CGL comprises: the electronic transmission layer ETL comprises a plurality of electronic transmission layers ETL and a plurality of insulating layers, wherein the upper layer and the lower layer adjacent to each ETL are insulating layers, the ETL and the insulating layers are sequentially overlapped and distributed, active metals are doped in the ETL, and the arranged plurality of ETLs are distributed according to the doping concentration of the active metals with gradients.
2. The OLED device of claim 1, wherein the insulating layer has a thickness less than or equal to 10nm.
3. The OLED device of claim 1, wherein the insulating layer material includes at least one of: aluminum oxide, silicon oxide, molybdenum trioxide, zinc oxide.
4. An OLED device as claimed in any one of claims 1 to 3 wherein the difference in active metal doping concentrations of any adjacent two ETLs is the same.
5. An OLED device as claimed in any one of claims 1 to 3 wherein the plurality of layers of ETLs are arranged with the active metal doping concentration decreasing from the middle to the sides in sequence or with the active metal doping concentration increasing from the top to the bottom.
6. The OLED device of claim 5, wherein in the three-layer ETL, the active metal doping concentration of the upper and lower ETLs is less than the active metal doping concentration of the intermediate ETL.
7. The OLED device of claim 6 wherein the upper ETL and the lower ETL have an active metal doping concentration of 2% and the intermediate ETL has an active metal doping concentration of 4%.
8. The OLED device of claim 5, wherein in the two-layer ETL, the active metal doping concentration of the upper ETL is greater than the active metal doping concentration of the lower ETL, wherein the upper ETL is the ETL on the side closer to the anode layer and the lower ETL is the ETL on the side closer to the cathode layer.
9. The OLED device of claim 8 wherein the upper ETL has an active metal doping concentration of 4% and the lower ETL has an active metal doping concentration of 2%.
10. A display panel, comprising at least: the OLED device of any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111358584.6A CN114068836B (en) | 2021-11-16 | 2021-11-16 | OLED device and display panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111358584.6A CN114068836B (en) | 2021-11-16 | 2021-11-16 | OLED device and display panel |
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| CN114068836A CN114068836A (en) | 2022-02-18 |
| CN114068836B true CN114068836B (en) | 2024-03-15 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1839493A (en) * | 2003-08-20 | 2006-09-27 | 伊斯曼柯达公司 | White light-emitting device with improved doping |
| CN104064677A (en) * | 2013-03-21 | 2014-09-24 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104218164A (en) * | 2013-05-31 | 2014-12-17 | 株式会社日本显示器 | Organic electroluminescence display device |
| CN104521021A (en) * | 2012-08-10 | 2015-04-15 | 欧司朗Oled股份有限公司 | Encapsulated components comprising an organic layer, and method for the production thereof |
| JP2021087001A (en) * | 2019-11-29 | 2021-06-03 | 株式会社Ｊｏｌｅｄ | Self-luminous element and self-luminous display panel |
| CN113490976A (en) * | 2019-02-26 | 2021-10-08 | 株式会社半导体能源研究所 | Display device, display module, electronic apparatus, and television device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102098563B1 (en) * | 2010-06-25 | 2020-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting element, light-emitting device, display, and electronic device |
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- 2021-11-16 CN CN202111358584.6A patent/CN114068836B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1839493A (en) * | 2003-08-20 | 2006-09-27 | 伊斯曼柯达公司 | White light-emitting device with improved doping |
| CN104521021A (en) * | 2012-08-10 | 2015-04-15 | 欧司朗Oled股份有限公司 | Encapsulated components comprising an organic layer, and method for the production thereof |
| CN104064677A (en) * | 2013-03-21 | 2014-09-24 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104218164A (en) * | 2013-05-31 | 2014-12-17 | 株式会社日本显示器 | Organic electroluminescence display device |
| CN113490976A (en) * | 2019-02-26 | 2021-10-08 | 株式会社半导体能源研究所 | Display device, display module, electronic apparatus, and television device |
| JP2021087001A (en) * | 2019-11-29 | 2021-06-03 | 株式会社Ｊｏｌｅｄ | Self-luminous element and self-luminous display panel |
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| CN114068836A (en) | 2022-02-18 |
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