CN113223916B - Inductively coupled plasma device - Google Patents
Inductively coupled plasma device Download PDFInfo
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- CN113223916B CN113223916B CN202110643823.6A CN202110643823A CN113223916B CN 113223916 B CN113223916 B CN 113223916B CN 202110643823 A CN202110643823 A CN 202110643823A CN 113223916 B CN113223916 B CN 113223916B
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- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 230000006698 induction Effects 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 15
- 230000035699 permeability Effects 0.000 claims description 8
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 230000001939 inductive effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
An inductively coupled plasma apparatus, comprising: the top wall of the reaction cavity main body comprises a dielectric window; an inductance coil positioned at the top of the dielectric window; a plurality of discrete magnetic elements located at the top of the dielectric window, the magnetic elements being surrounded by and discrete from at least a portion of the turn of the inductor. The inductively coupled plasma device can adjust the plasma density graduation in the reaction cavity main body and has a simple structure.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an inductively coupled plasma device.
Background
In semiconductor manufacturing, a plurality of processes are involved, each of which is completed by a certain equipment and process. Among them, an etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process is to utilize the reaction gas to generate plasma after obtaining energy, and the plasma comprises charged particles such as ions, electrons and the like, and neutral atoms, molecules and free radicals with high chemical activity, and etch an etching object through physical and chemical reactions.
However, in the plasma etching process, the etching conditions at the edge of the wafer and the etching conditions at the center of the wafer are greatly different, and the etching conditions include: plasma density distribution, radio frequency electric field, temperature distribution, etc. One etching condition in which the plasma density profile is very important. For example, in general, the plasma density is distributed over a central region of the wafer to be greater than the plasma density is distributed over an edge region of the wafer, and such distribution is difficult to adjust.
Therefore, there is a need to provide an inductively coupled plasma apparatus that controllably adjusts the plasma distribution to meet the needs.
Disclosure of Invention
The invention solves the problem of providing an inductively coupled plasma device, which can improve and regulate the plasma density distribution in the reaction cavity main body of the inductively coupled plasma device and has a simple structure.
In order to solve the above technical problems, the present invention provides an inductively coupled plasma apparatus, comprising: the top wall of the reaction cavity main body comprises a dielectric window; an inductance coil positioned at the top of the dielectric window; a plurality of discrete magnetic elements located at the top of the dielectric window, the magnetic elements being surrounded by and discrete from at least a portion of the turn of the inductor.
Optionally, the number of the inductance coils is M, the M inductance coils include a first inductance coil to an mth inductance coil, and M is an integer greater than or equal to 1; the j-th induction coil is provided with a j-th radio frequency input end and a j-th grounding end; j is an integer of 1 or more and M or less.
Optionally, M is an integer greater than or equal to 2, the M inductance coils are mutually separated, the m+1th inductance coil is integrally positioned at the outer side part of the M inductance coil and surrounds the M inductance coil, and M is an integer greater than or equal to 1 and less than or equal to M-1; the jth inductor includes a first to an nth j turns of inductors, and N j is an integer of 1 or more.
Optionally, N j is an integer greater than or equal to 2; the j-th inductance coil is in a spiral shape; the central axis of the j-th induction coil is perpendicular to the surface of the dielectric window; at least two magnetic elements are arranged between the m-th inductance coil and the m+1th inductance coil.
Optionally, N j is an integer greater than or equal to 2; the shape of the jth inductance coil is coil type, and the central axis of the jth inductance coil is vertical to the surface of the dielectric window; a first inductor winding surrounding at least two magnetic elements; at least two magnetic elements are arranged between the N m th inductive coil of the mth inductive coil and the N m+1 th inductive coil of the (m+1) th inductive coil.
Optionally, the position distribution of the plurality of discrete magnetic elements is adjustable.
Optionally, the magnetic element has a relative permeability of 2 to 10000.
Optionally, each magnetic element has a columnar structure, a ring structure or a cuboid structure.
Optionally, the magnetic element comprises a ferrite magnetic element or a silicon steel magnetic element.
Optionally, the plurality of discrete magnetic elements are distributed along a direction parallel to a surface of the dielectric window.
Optionally, the method further comprises: a height adjustment mechanism coupled to the plurality of discrete magnetic elements, the height adjustment mechanism adapted to adjust the spacing of each of the magnetic elements to the dielectric window.
Optionally, the height adjustment mechanism includes: linear motor, cylinder structure or worm structure.
Optionally, the dielectric window includes a central region and an edge region surrounding the central region; the distribution density of the magnetic elements over the edge region is greater than the distribution density over the central region.
Optionally, the method further comprises: a radio frequency source; the radio frequency matcher, the one end of radio frequency matcher with the radio frequency source is connected, the other end of radio frequency matcher is connected with the first radio frequency input of first inductance coil to the first radio frequency input of Mth inductance coil.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
The inductively coupled plasma device provided by the technical scheme of the invention comprises a reaction cavity main body, wherein the top wall of the reaction cavity main body comprises a dielectric window; an inductance coil positioned at the top of the dielectric window; a plurality of discrete magnetic elements located at the top of the dielectric window, the magnetic elements being surrounded by and discrete from at least a portion of the turn of the inductor. The invention is provided with a plurality of passive magnetic elements, the magnetic elements are at least surrounded by partial coils of the inductance coils and are separated from the inductance coils, the magnetic elements can strengthen and adjust the magnetic induction intensity spatial distribution, and the plasma density distribution inside the reaction cavity main body is adjustable. And secondly, the inductance coil is simple in structure, and the inductance coil is simpler in electrical connection with the radio frequency source.
Further, the inductively coupled plasma apparatus further includes a height adjustment mechanism coupled to the plurality of discrete magnetic elements, the height adjustment mechanism adapted to adjust a spacing of each of the magnetic elements to the dielectric window. The larger the distance between the magnetic element and the dielectric window is, the larger the attenuation of the magnetic induction intensity in the reaction cavity main body is, and the lower the plasma density in the corresponding reaction cavity main body is. The smaller the distance between the magnetic element and the dielectric window is, the smaller the attenuation of the magnetic induction intensity inside the reaction cavity main body is, and the lower the plasma density inside the corresponding reaction cavity main body is. This results in an enhanced adjustability of the plasma density inside the reaction chamber body. The plasma density inside the reaction chamber body is regulated at any time before or during the process to meet the process requirements.
Drawings
FIG. 1 is a schematic diagram of an inductively coupled plasma apparatus according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a portion of an inductively coupled plasma apparatus in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of an inductively coupled plasma apparatus in accordance with another embodiment of the present invention;
fig. 4 is a schematic structural diagram of an inductively coupled plasma apparatus in accordance with another embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
An embodiment of the present invention provides an inductively coupled plasma apparatus, referring to fig. 1 and 2in combination, comprising:
a reaction chamber body 100, wherein a top wall of the reaction chamber body 100 includes a dielectric window 101;
An inductor 110 located on top of dielectric window 101;
A number of discrete magnetic elements 120 located at the top of the dielectric window 101, the magnetic elements 120 being surrounded by at least a partial turn of the inductor 110 and being discrete from the inductor 110.
The number of the inductance coils 110 is M, the M inductance coils include a first inductance coil to an mth inductance coil, and M is an integer greater than or equal to 1; the j-th induction coil is provided with a j-th radio frequency input end and a j-th grounding end; j is an integer of 1 or more and M or less.
In one embodiment, M is an integer greater than or equal to 2, the M inductance coils are mutually separated, the m+1th inductance coil is integrally arranged on the outer side part of the M inductance coil and surrounds the M inductance coil, and M is an integer greater than or equal to 1 and less than or equal to M-1.
The jth inductor includes a first to an nth j turns of inductors, and N j is an integer of 1 or more. When j is 1, the first inductance coil comprises a first inductance coil to an N 1 -th inductance coil, and N 1 is an integer greater than or equal to 1; when j is M, the Mth inductance coil comprises a first inductance coil to an N M th inductance coil, and N M is an integer greater than or equal to 1. Any two values from N 1 to N M are equal or different.
In one embodiment, N j is an integer greater than or equal to 2; the j-th inductance coil is in a spiral shape; the central axis of the j-th induction coil is perpendicular to the surface of the dielectric window; at least two magnetic elements are arranged between the m-th inductance coil and the m+1th inductance coil.
In another embodiment, N j is an integer greater than or equal to 2; the shape of the jth inductance coil is coil type, and the central axis of the jth inductance coil is vertical to the surface of the dielectric window; a first inductor winding surrounding at least two magnetic elements; at least two magnetic elements are arranged between the N m th inductive coil of the mth inductive coil and the N m+1 th inductive coil of the (m+1) th inductive coil.
In a specific embodiment, the magnetic elements disposed between the N m th inductor of the mth inductor and the N m+1 th inductor of the (m+1) th inductor are each located between any two adjacent turns of the (m+1) th inductor.
At least two magnetic elements are arranged between the first inductance coil and the N j inductance coils of the jth inductance coil. At least two magnetic elements are arranged between the first inductance coil and the N 1 th inductance coil of the first inductance coil. At least two magnetic elements are arranged between the first inductance coil and the N M inductance coils of the Mth inductance coil.
The kth j turns of inductance coils in the jth inductance coils are connected with the kth j +1 turns of inductance coils; k j is an integer of 1 or more and N j -1 or less.
The inductance coil 110 of the embodiment has a simple structure, and the electrical connection between the inductance coil 110 and the rf source is relatively simple.
The rf current fed into the induction coil 110 forms an alternating magnetic field, and the alternating magnetic field excites the gas inside the reaction chamber body 100 through the dielectric window 101 to form an inductively coupled plasma a (refer to fig. 2), and the density of the inductively coupled plasma is positively correlated with the excitation magnetic induction intensity. Because the magnetic element 120 is arranged, the magnetic element 120 can enhance and adjust the magnetic induction intensity spatial distribution, so that the plasma density distribution inside the reaction chamber main body 100 is adjustable.
In this embodiment, the position distribution of the plurality of discrete magnetic elements is adjustable.
The distribution of the several discrete magnetic elements along the surface of the dielectric window 101 is adjustable.
In one embodiment, the radio frequency fed into the inductor 110 is 40 khz-60 mhz.
In this embodiment, the magnetic element 120 has a columnar structure.
In this embodiment, the relative magnetic permeability of the magnetic element 120 is 2 to 10000, and preferably, the relative magnetic permeability of the magnetic element 120 is 100 to 10000.
In one embodiment, the relative permeability of several magnetic elements 120 is the same. In another embodiment, the relative permeability of the several magnetic elements 120 is different.
The magnetic element 120 includes a ferrite magnetic element or a silicon steel magnetic element.
In this embodiment, the plurality of induction coils are distributed along a direction parallel to the surface of the dielectric window 101.
The plurality of discrete magnetic elements 120 are distributed along a direction parallel to the surface of the dielectric window 101. Fig. 1 is for ease of illustration only and does not represent the actual location of the inductor and magnetic element 120.
In one embodiment, the dielectric window 101 includes a central region and an edge region surrounding the central region. The distribution density of the magnetic elements 120 is greater over the edge region than over the center region.
In one embodiment, when the distribution density of the magnetic elements 120 is greater on the edge region than on the center region, the relative permeability of the magnetic elements 120 on the edge region is greater than the relative permeability of the magnetic elements 120 on the center region.
The plasma density directly below the magnetic element 120 is greater than the plasma density at a location laterally below the magnetic element 120.
The inductively coupled plasma apparatus further includes: a wafer carrier (not shown) disposed within the chamber body 100. The surface of the wafer carrying platform is suitable for placing a wafer.
The top wall of the reaction chamber body 100 has an air inlet (not shown). The bottom wall of the reaction chamber body 100 has an air outlet (not shown).
The inductively coupled plasma apparatus further includes: a radio frequency source (not shown); the radio frequency matcher (not shown), one end of the radio frequency matcher is connected with the radio frequency source, and the other end of the radio frequency matcher is connected with the first radio frequency input end of the first inductance coil to the first radio frequency input end of the Mth inductance coil.
In this embodiment, the working principle of the inductively coupled plasma device includes: the radio frequency power provided by the radio frequency source is fed into the induction coil 110 through the radio frequency matcher, the radio frequency current in the induction coil 110 generates an alternating magnetic field perpendicular to a current plane in the reaction chamber main body 100, the alternating magnetic field induces an angular electric field parallel to the current direction of the coil in the reaction chamber main body 100, the reaction gas in the reaction chamber main body 100 generates inductive coupling plasma a under the action of the angular electric field, and the density distribution of the inductive coupling plasma a can be controlled by the size of the radio frequency power in the induction coil 110 and the distribution of the magnetic elements 120. The regulated plasma is gradually accelerated to reach the surface of the wafer by the bias voltage applied on the wafer carrying platform, and the etching process or other processes of the wafer are completed.
Another embodiment of the present invention further provides an inductively coupled plasma apparatus, referring to fig. 3, the inductively coupled plasma apparatus of this embodiment is different from the inductively coupled plasma apparatus of the previous embodiment in that: the inductively coupled plasma apparatus further includes: a height adjustment mechanism 130 coupled to a plurality of discrete magnetic elements 120, the height adjustment mechanism 130 being adapted to adjust the spacing of each of the magnetic elements 120 from the dielectric window 101.
The height adjustment mechanism 130 includes: linear motor, cylinder structure or worm structure.
The height adjustment mechanism 130 independently adjusts the spacing of each magnetic element 120 from the dielectric window 101. Or the height adjustment mechanism 130 adjusts the spacing of each magnetic element 120 to the dielectric window 101 simultaneously.
The larger the distance between the magnetic element 120 and the dielectric window 101, the larger the attenuation of the magnetic induction intensity inside the reaction chamber body 100, and the lower the plasma density inside the corresponding reaction chamber body 100. The smaller the distance between the magnetic element 120 and the dielectric window 101, the smaller the attenuation of the magnetic induction intensity inside the reaction chamber body 100, and the lower the plasma density inside the corresponding reaction chamber body 100. This results in an enhanced adjustability of the plasma density inside the reaction chamber body. The plasma density inside the reaction chamber body is regulated at any time before or during the process to meet the process requirements.
The same contents as those of the previous embodiment are not described in detail.
In particular, when the shape of the induction coil is spiral, the height adjusting mechanism 130 is used to adjust the position of the magnetic element 120 along the central axis direction of the induction coil, so as to obviously adjust the plasma density inside the reaction chamber body.
When the shape of the inductor coil is coil-shaped, the height adjusting mechanism 130 can adjust the position of the magnetic element 120 along the central axis direction of the inductor coil.
Another embodiment of the present invention further provides an inductively coupled plasma apparatus, referring to fig. 4, the inductively coupled plasma apparatus of this embodiment is different from the inductively coupled plasma apparatus of the previous embodiment in that: the magnetic element 120a has a ring-like structure. The same contents as those of the previous embodiment are not described in detail.
In other embodiments, each of the magnetic elements has a rectangular parallelepiped shape, and a long side direction of the rectangular parallelepiped structure is parallel to a surface of the dielectric window.
The shape of the magnetic element of the present invention is not limited to the shape described in the above embodiment, but may be other shapes.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (10)
1. An inductively coupled plasma apparatus, comprising:
the top wall of the reaction cavity main body comprises a dielectric window;
an inductance coil positioned at the top of the dielectric window;
A plurality of discrete magnetic elements positioned on top of the dielectric window, the magnetic elements being surrounded by and discrete from at least a portion of the turns of the inductor coil; the plurality of discrete magnetic elements are distributed along a direction parallel to a surface of the dielectric window;
The dielectric window comprises a central region and an edge region surrounding the central region; the distribution density of the magnetic elements over the edge region is greater than the distribution density over the central region;
The number of the inductance coils is M, the M inductance coils comprise a first inductance coil and an Mth inductance coil, and M is an integer greater than or equal to 2; the j-th induction coil is provided with a j-th radio frequency input end and a j-th grounding end; j is an integer of 1 or more and M or less;
the M inductance coils are mutually separated, the (m+1) th inductance coil is integrally positioned on the outer side part of the (M) th inductance coil and surrounds the (M) th inductance coil, and M is an integer which is more than or equal to 1 and less than or equal to M-1;
the jth inductance coil comprises a first inductance coil to an N j th inductance coil, and N j is an integer greater than or equal to 1;
At least two magnetic elements are arranged between the mth inductance coil and the (m+1) th inductance coil; or the first induction coil surrounds at least two magnetic elements, and at least two magnetic elements are arranged between the N m th induction coil of the mth induction coil and the N m+1 th induction coil of the (m+1) th induction coil.
2. The inductively coupled plasma apparatus of claim 1, wherein N j is an integer greater than or equal to 2; the j-th inductance coil is in a spiral shape; the central axis of the j-th inductance coil is perpendicular to the surface of the dielectric window.
3. The inductively coupled plasma apparatus of claim 1, wherein N j is an integer greater than or equal to 2; the jth inductance coil is shaped like a coil, and the central axis of the jth inductance coil is perpendicular to the surface of the dielectric window.
4. The inductively coupled plasma apparatus of claim 1 wherein the position distribution of the plurality of discrete magnetic elements is adjustable.
5. The inductively coupled plasma apparatus of claim 1, wherein the magnetic element has a relative permeability of 2 to 10000.
6. The inductively coupled plasma apparatus of claim 1, wherein each of the magnetic elements has a columnar structure, a ring-like structure, or a rectangular parallelepiped structure.
7. The inductively coupled plasma apparatus of claim 1, wherein the magnetic element comprises a ferrite magnetic element or a silicon steel magnetic element.
8. The inductively coupled plasma apparatus of claim 1, further comprising: a height adjustment mechanism coupled to the plurality of discrete magnetic elements, the height adjustment mechanism adapted to adjust the spacing of each of the magnetic elements to the dielectric window.
9. The inductively coupled plasma apparatus of claim 8, wherein the height adjustment mechanism comprises: linear motor, cylinder structure or worm structure.
10. The inductively coupled plasma apparatus of claim 1, further comprising: a radio frequency source; the radio frequency matcher, the one end of radio frequency matcher with the radio frequency source is connected, the other end of radio frequency matcher is connected with the first radio frequency input of first inductance coil to the first radio frequency input of Mth inductance coil.
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| JP2013129897A (en) * | 2011-12-22 | 2013-07-04 | Samco Inc | Mask member of inductive coupling type plasma processing apparatus |
| CN108271309A (en) * | 2016-12-30 | 2018-07-10 | 中微半导体设备(上海)有限公司 | A kind of device for inductively coupled plasma processing |
| CN110299276A (en) * | 2018-03-21 | 2019-10-01 | 北京北方华创微电子装备有限公司 | Inductively coupled plasma body generation device and semiconductor processing equipment |
| CN214542120U (en) * | 2021-06-09 | 2021-10-29 | 上海邦芯半导体科技有限公司 | Inductively coupled plasma device |
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