CN111276443B - Preparation method of microwave thin film hybrid integrated circuit - Google Patents
Preparation method of microwave thin film hybrid integrated circuit Download PDFInfo
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- CN111276443B CN111276443B CN202010084967.8A CN202010084967A CN111276443B CN 111276443 B CN111276443 B CN 111276443B CN 202010084967 A CN202010084967 A CN 202010084967A CN 111276443 B CN111276443 B CN 111276443B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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Abstract
The invention relates to the field of microelectronics, in particular to a preparation method of a microwave thin film hybrid integrated circuit. The method comprises the following steps: punching a through hole on a substrate to form a through hole; depositing seed layers on the front side and the back side of the device; the seed layer covers the front surface of the device, the back surface of the device and the through hole; filling the through hole by a temporary filling layer; fixing the device by a vacuum adsorption method, and spin-coating a photoresist on the front side of the device; photoetching the front surface of the device, and forming a photoresist mask in a preset area of the front surface of the device; the seed layer corresponding to the region outside the preset region is a circuit pattern; removing the temporary filling layer; electroplating and thickening the device to thicken the circuit pattern; removing the photoresist mask; and removing the seed layer in the preset area. The method can fix the device by using a vacuum adsorption method in the step of coating the photoresist, reduces the process difficulty and improves the quality of the wafer.
Description
Technical Field
The invention relates to the field of microelectronics, in particular to a preparation method of a microwave thin film hybrid integrated circuit.
Background
The microwave film hybrid integrated circuit is widely applied to the manufacture of microwave devices such as microwave power amplifiers, power synthesis, voltage-controlled oscillators, attenuators, limiters, couplers, filters and the like, and is characterized in that the front and the back of a film circuit are interconnected by through holes and used for grounding active and passive elements such as a surface-mounted chip on the front circuit.
The flow charts of the current method for manufacturing the microwave thin film hybrid integrated circuit are shown in fig. 1 to 7. In fig. 1, a via hole is formed on a ceramic substrate by laser drilling. In fig. 2, seed layers are deposited on the front and back sides of the device. In fig. 3, the front side of the device is coated with photoresist. In fig. 4, the front surface of the device is patterned by photolithography to form a patterned circuit. In fig. 5, the seed layers on the front and back sides of the device and the seed layers in the holes are electroplated to thicken the pattern circuit. In fig. 6, the photoresist is removed. In fig. 7, the seed layer in the non-pattern circuit region is etched to complete the fabrication of the thin film circuit.
For a general substrate (i.e., a substrate without a through hole), the photoresist coating process can be performed in a spin-on process to achieve the best coating effect. The spin coating process is to fix the film substrate on the wafer bearing table in a vacuum adsorption mode, and the wafer bearing table is driven by a motor to rotate at a high speed, so that the photoresist uniformly covers the surface of the substrate. In the prior method, when the microwave thin film hybrid integrated circuit is manufactured, the substrate cannot be fixed in a vacuum adsorption mode after the substrate is punched, so that the substrate is mechanically fixed by pins instead of vacuum adsorption. However, the mechanical fixing of the pin has very high requirement on the position precision of a manipulator, the wafer bearing table is not firmly fixed mechanically, the wafer is easy to fly, the fixing is not accurate, the uniform gluing cannot be performed, and the process difficulty is high. Moreover, because the photoresist in the through hole is more, the photoresist in the through hole is difficult to develop in the photoetching development process: the developing time is short, so that photoresist residues in the through holes are caused, and the plating layer in the through holes is discontinuous in the subsequent electroplating thickening process, so that the interconnection quality of the through holes is influenced; the long development time has a large effect on the photoresist on the front side of the substrate as a mask layer, both of which affect the accuracy of the wafer formation.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method for manufacturing a microwave thin film hybrid integrated circuit, so as to solve the problems of high process difficulty and low sheet precision of the existing method for manufacturing a microwave thin film hybrid integrated circuit.
The first aspect of the embodiments of the present invention provides a method for manufacturing a microwave thin film hybrid integrated circuit, including:
punching a through hole on a substrate to form a through hole;
depositing seed layers on the front side and the back side of the device; the seed layer covers the front surface of the device, the back surface of the device and the through hole;
filling the through hole by a temporary filling layer;
fixing the device by a vacuum adsorption method, and spin-coating photoresist on the front side of the device;
photoetching the front surface of the device, and forming a photoresist mask in a preset area of the front surface of the device; the seed layer corresponding to the region outside the preset region is a circuit pattern;
removing the temporary filling layer;
electroplating and thickening the device to thicken the circuit pattern;
removing the photoresist mask;
and removing the seed layer in the preset area.
Optionally, the substrate includes any one of an alumina ceramic substrate, an aluminum nitride ceramic substrate, a sapphire substrate, and a glass-ceramic substrate.
Optionally, the depositing seed layers on the front side and the back side of the device includes: seed layers are deposited on the front and back surfaces of the device by physical vapor deposition and/or chemical vapor deposition.
Optionally, the seed layer material includes any one of TaN/TiW/Au alloy, tiW/Au alloy and Ti/Cu alloy.
Optionally, the removing the seed layer in the preset region includes: and removing the seed layer in the preset area by a wet etching mode.
Optionally, the filling the through hole with a temporary filling layer includes: pasting a thin film on the front surface of the device; coating glue on the back of the device to cover the back of the device and fill the through hole; and after the glue is cured, removing the film on the front surface of the device.
Optionally, the film comprises a temporary bonding adhesive film; correspondingly, the removing of the thin film on the front surface of the device comprises the following steps: and removing the temporary bonding adhesive film on the front surface of the device by means of laser adhesive decomposition and/or thermal adhesive decomposition.
Optionally, the glue comprises a temporary bonding glue.
Optionally, the step of coating glue on the back surface of the device includes: and coating the temporary bonding glue on the back surface of the device by a screen printing or spin coating mode.
Optionally, the removing the temporary filling layer includes: and removing the temporary bonding glue by means of dry etching and/or wet etching.
According to the preparation method of the microwave thin film hybrid integrated circuit, firstly, the through hole is formed in the substrate, the seed layer is deposited on the front surface and the back surface of the device, the seed layer covers the front surface of the device, the back surface of the device and the through hole, the through hole is filled through the temporary filling layer, and therefore the device can be fixed by using a vacuum adsorption method in the step of coating photoresist, the photoresist is coated in a spin coating mode, and the process difficulty is reduced. And after the device is subjected to photoetching, the temporary filling layer can be directly removed, the problem that photoresist in the hole is difficult to develop is solved, and the precision of the microwave thin film hybrid integrated circuit manufactured through subsequent steps is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIGS. 1 to 7 are schematic cross-sectional views corresponding to the conventional fabrication method for fabricating a microwave thin film hybrid integrated circuit;
FIG. 8 is a flow chart of a method for fabricating a microwave thin film hybrid integrated circuit according to an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view of fig. 9 corresponding to step S801 according to an embodiment of the present invention;
fig. 10 is a schematic cross-sectional structure diagram corresponding to step S802 according to an embodiment of the present invention;
FIG. 11 is a schematic cross-sectional view of a thin film applied to the front surface of a device according to an embodiment of the present invention;
FIG. 12 is a schematic cross-sectional view illustrating a glue application on the backside of a device according to an embodiment of the present invention;
FIG. 13 is a schematic cross-sectional view of a thin film on the front surface of a device according to an embodiment of the present invention;
fig. 14 is a schematic cross-sectional view corresponding to step S804 according to an embodiment of the present invention;
fig. 15 is a schematic cross-sectional view corresponding to step S805 according to an embodiment of the present invention;
fig. 16 is a schematic cross-sectional view corresponding to step S806 according to an embodiment of the present invention;
fig. 17 is a schematic cross-sectional view corresponding to step S807 according to an embodiment of the present invention;
fig. 18 is a schematic cross-sectional structure diagram corresponding to step S808 according to an embodiment of the present invention;
fig. 19 is a schematic cross-sectional structure diagram corresponding to step S809 according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings in combination with embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 8 is a schematic flow chart of a method for manufacturing a microwave thin film hybrid integrated circuit according to an embodiment of the present invention, and referring to fig. 8, the method for manufacturing a microwave thin film hybrid integrated circuit may include:
in step S801, a through hole is formed in a substrate.
In the embodiment of the invention, the substrate for preparing the microwave thin film hybrid integrated circuit is mostly a ceramic substrate, the holes can be punched in a laser mode, and the specific number of the punched holes can be set according to actual requirements.
Step S802, seed layers are deposited on the front surface and the back surface of the device; wherein the seed layer covers the front surface of the device, the back surface of the device and the through hole.
In the embodiment of the invention, the seed layer can be deposited on the front surface and the back surface of the device by means of physical vapor deposition and/or chemical vapor deposition, so that the seed layer wraps the front surface area, the back surface area and the through hole area of the device.
Step S803, filling the via hole with a temporary filling layer.
In the embodiment of the invention, in order to fix the device in a vacuum adsorption mode in the subsequent photoresist coating step, the temporary filling layer can be used for filling the through hole in the step, so that the surface of the device is complete. The filling layer can be made of various materials except photoresist, is easy to form and operate, and can be filled by glue in the embodiment of the invention.
Step S804, the device is fixed through a vacuum adsorption method, and photoresist is coated on the front side of the device in a spinning mode.
In the embodiment of the present invention, after the through hole is filled in step S803, a vacuum adsorption method may be adopted to spin-coat a photoresist on the device. The spin-coating of the photoresist is to fix the thin film substrate on a wafer bearing table in a vacuum adsorption mode, a glue dripping opening is formed above the wafer bearing table, the photoresist flows to a device through the glue dripping opening, a motor drives the wafer bearing table to rotate at a high speed, and the photoresist uniformly covers the surface of the substrate through high-speed centrifugation.
Step S805, photoetching is carried out on the front surface of the device, and a photoresist mask is formed in a preset area on the front surface of the device; and the seed layer corresponding to the region outside the preset region is a circuit pattern.
In the embodiment of the invention, the device which is coated with the photoresist in a spinning way is subjected to a standard photoetching process to form a circuit pattern, wherein the photoresist which is not removed forms a photoresist mask layer which is used for playing a role of a mask in the subsequent steps.
Step S806, removing the temporary filling layer.
In the embodiment of the invention, before electroplating thickening treatment is carried out on the circuit pattern, the temporary filling layer needs to be removed, and the removal method corresponds to the material of the temporary filling layer and does not react with other components in the device.
Step S807, electroplating thickening processing is carried out on the device, so that the circuit pattern is thickened.
In the embodiment of the invention, the device with the temporary filling layer removed is subjected to electroplating thickening treatment, so that the circuit pattern is thickened.
Step S808, removing the photoresist mask.
In the embodiment of the invention, the photoresist mask layer is removed, and the method can comprise dry etching and/or dry etching.
Step S809, removing the seed layer in the preset area.
In the embodiment of the invention, the seed layer in the preset area is removed, namely the seed layer outside the circuit pattern area is removed, the method can comprise wet etching, and the preparation of the microwave thin film hybrid integrated circuit is completed after the seed layer in the area is removed.
According to the preparation method of the microwave thin film hybrid integrated circuit provided by the embodiment of the invention, firstly, a through hole is formed on the substrate, the seed layer is deposited on the front surface and the back surface of the device, the seed layer covers the front surface of the device, the back surface of the device and the through hole, the through hole is filled through the temporary filling layer, so that the device can be fixed by using a vacuum adsorption method in the step of coating the photoresist, the photoresist is coated by using a spin coating method, and the process difficulty is reduced. In addition, after the device is subjected to photoetching, the temporary filling layer and the photoresist belong to different materials, so that the temporary filling layer can be directly removed on the premise of not reacting with the photoresist, and the development time is not limited, so that the problem of difficulty in developing the photoresist in the hole in the background technology does not exist, and the precision of the microwave thin film hybrid integrated circuit manufactured through subsequent steps is improved.
In some embodiments, the substrate comprises any one of an alumina ceramic substrate, an aluminum nitride ceramic substrate, a sapphire substrate, and a glass-ceramic substrate.
In the embodiment of the present invention, referring to fig. 9, fig. 9 is a schematic structural diagram corresponding to step S801, where a through hole is formed in the substrate 101, and the substrate 101 may be any one of an alumina ceramic substrate, an aluminum nitride ceramic substrate, a sapphire substrate, and a glass-ceramic substrate. In this embodiment, there are two through holes, and the area where the dotted line is located is shown in fig. 9.
In some embodiments, the depositing seed layers on the front side and the back side of the device comprises: seed layers are deposited on the front and back surfaces of the device by physical vapor deposition and/or chemical vapor deposition.
In an embodiment of the present invention, referring to fig. 10, fig. 10 is a schematic structural diagram corresponding to step S802, and the seed layer 102 may be deposited on the front surface and the back surface of the device by physical vapor deposition and/or chemical vapor deposition, so that the seed layer 102 covers the surface of the substrate 101.
In some embodiments, the seed layer material may include TaN/TiW/Au alloys, ti/Cu alloys, and the like.
In some embodiments, the filling the via hole with a temporary filling layer includes: pasting a thin film on the front surface of the device; coating glue on the back of the device to cover the back of the device and fill the through hole; and after the glue is cured, removing the film on the front surface of the device.
In the embodiment of the present invention, schematic structural diagrams corresponding to the steps included in step S803 are shown in fig. 11 to 13. In this embodiment, glue is selected as the material of the temporary filling layer, which is intended to be easy to operate and remove. The specific glue material can be selected from temporary bonding glue or other types of photoresist, and the photoresist removing water can be ensured not to corrode the front photoresist in the photoresist removing process. In fig. 11, the side to be coated with the photoresist is selected as the front side of the device, and a thin film 103 is attached to the front side of the device to keep the side coated with the photoresist clean and facilitate filling of the through hole with glue during subsequent filling of the through hole with glue. In fig. 12, a temporary filling layer 104 is formed by applying glue to the back of the device, and during the application, the side to which the film 103 is attached may be placed on a platform so that the glue can sufficiently fill the through holes. In fig. 13, after the glue is applied, the film is removed.
In some embodiments, the film comprises a temporary bond adhesive film; correspondingly, the removing of the thin film on the front surface of the device comprises the following steps: and removing the temporary bonding adhesive film on the front surface of the device by means of laser adhesive stripping and/or thermal adhesive stripping.
In the embodiment of the present invention, the film may be a temporary bonding adhesive film, specifically, the temporary bonding adhesive film may be a UV film, and when the temporary bonding adhesive film is a UV film, the temporary bonding adhesive film may be removed by a UV debonding method in addition to a laser debonding and/or a pyrolysis debonding method.
In some embodiments, the glue comprises a temporary bond glue.
In the embodiment of the invention, the glue can be temporary bonding glue. Temporary bonding glues, which are typically polymer bonding materials used in wafer thinning processes, can temporarily bond device wafers to carrier wafers and support ultra-thin device substrates through a harsh back-end stable wafer process. In this embodiment, the temporary bonding glue is used as a material of the temporary filling layer, and the temporary filling layer has the advantages of good chemical stability and thermal stability, compatibility with subsequent steps, and no mutual influence with steps such as photolithography. When the film is a temporary bonding adhesive film and the temporary bonding adhesive film is removed in a pyrolysis mode, the temporary bonding adhesive is not influenced by adjusting the film to a proper temperature, and more process options are provided.
In some embodiments, the applying glue on the back side of the device includes: and coating the temporary bonding glue on the back surface of the device by a screen printing or spin coating mode.
In the embodiment of the invention, when the glue is the temporary bonding glue, the temporary bonding glue can be coated on the back surface of the device in a screen printing or spin coating mode, so that the temporary bonding glue is fully filled in the through hole, and a uniform and flat layer structure can be formed on the back surface of the device, thereby being beneficial to the implementation of a subsequent vacuum adsorption fixing method and improving the stability of vacuum adsorption.
Fig. 14 is a schematic structural diagram corresponding to step S804, in which the device filled with the temporary filling layer 104 is fixed on a stage by vacuum suction, and a photoresist 105 is spin-coated on the front side of the device.
Fig. 15 is a schematic structural diagram corresponding to step S805, in which a standard photolithography step is performed on the front surface of the device, and a photoresist mask 106 is formed in a preset region on the front surface of the device, where a region other than the photoresist mask 106 is a circuit pattern to be formed.
Fig. 16 is a schematic structural diagram corresponding to step S806, and after the step of photolithography is completed, the temporary filling layer is removed.
In some embodiments, the removing the temporary filling layer comprises: and removing the temporary bonding glue by means of dry etching and/or wet etching.
In the embodiment of the invention, when the temporary filling layer is formed by the temporary bonding glue, the temporary bonding glue can be removed by means of dry etching and/or wet etching.
Fig. 17 is a schematic structural diagram corresponding to step S807, and a device is subjected to electroplating thickening processing to thicken the circuit pattern, and the thickened pattern circuit is shown as 107 in fig. 17.
Fig. 18 is a schematic structural view corresponding to step S808, in which the photoresist mask is removed.
Fig. 19 is a schematic structural diagram corresponding to step S809, where the seed layer in the predetermined area is removed, and the preparation of the microwave thin film hybrid integrated circuit is completed.
In some embodiments, the seed layer in the predetermined region may be removed by wet etching.
The above-mentioned embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (9)
1. A method for preparing a microwave thin film hybrid integrated circuit is characterized by comprising the following steps:
punching a through hole on a substrate to form a through hole;
depositing seed layers on the front side and the back side of the device; the seed layer covers the front surface of the device, the back surface of the device and the through hole;
filling the through hole by a temporary filling layer;
fixing the device by a vacuum adsorption method, and spin-coating photoresist on the front side of the device;
photoetching the front surface of the device, and forming a photoresist mask in a preset area of the front surface of the device; the seed layer corresponding to the region outside the preset region is a circuit pattern;
removing the temporary filling layer;
electroplating and thickening the device to thicken the circuit pattern;
removing the photoresist mask;
removing the seed layer in the preset area;
the filling of the via hole by the temporary filling layer includes:
pasting a thin film on the front surface of the device;
coating glue on the back of the device to cover the back of the device and fill the through hole;
and after the glue is cured, removing the film on the front surface of the device.
2. The method for manufacturing a microwave thin film hybrid integrated circuit according to claim 1, wherein the substrate comprises any one of an alumina ceramic substrate, an aluminum nitride ceramic substrate, a sapphire substrate, and a glass-ceramic substrate.
3. The method of claim 1, wherein depositing seed layers on the front and back sides of the device comprises:
seed layers are deposited on the front and back surfaces of the device by physical vapor deposition and/or chemical vapor deposition.
4. The method of claim 1, wherein the seed layer material comprises any one of TaN/TiW/Au alloy, and Ti/Cu alloy.
5. The method of claim 1, wherein the removing the seed layer in the predetermined area comprises:
and removing the seed layer in the preset area by a wet etching mode.
6. The method of claim 1, wherein the step of forming the thin film hybrid integrated circuit includes the step of forming a thin film transistor,
the film comprises a temporary bonding adhesive film;
correspondingly, the removing of the thin film on the front surface of the device comprises the following steps:
and removing the temporary bonding adhesive film on the front surface of the device by means of laser adhesive decomposition and/or thermal adhesive decomposition.
7. A method of fabricating a microwave thin film hybrid integrated circuit as claimed in claim 1, wherein the glue comprises a temporary bond glue.
8. The method of claim 7 wherein said applying glue to the back of the device comprises:
and coating the temporary bonding glue on the back surface of the device by a screen printing or spin coating mode.
9. The method of claim 7, wherein said removing the temporary fill layer comprises:
and removing the temporary bonding glue by means of dry etching and/or wet etching.
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