CN1111288C - Photon crystal quantum trap structure and its preparing process - Google Patents
Photon crystal quantum trap structure and its preparing process Download PDFInfo
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- CN1111288C CN1111288C CN 00137208 CN00137208A CN1111288C CN 1111288 C CN1111288 C CN 1111288C CN 00137208 CN00137208 CN 00137208 CN 00137208 A CN00137208 A CN 00137208A CN 1111288 C CN1111288 C CN 1111288C
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Abstract
The present invention relates to a photon crystal quantum trap structure. The present invention uses two different kinds of dielectric material to form photon crystals. The photon crystal A/the photon crystal B/the photon crystal A are arranged to form the photon crystal quantum trap structure. A proper structure and a dielectric constant proportioning are selected, which leads the quantum trap namely a photon energy band structure of the middle photon crystal and a barrier region namely an energy band structure of the photon crystals at both ends to be different. Because the photon energy band structures of the two photon crystals are different, the transmission characteristic of light waves can be modulated, and a lot of new physical phenomena appear.
Description
The present invention relates to constitute photon crystal quantum trap structure by the photonic crystal that the different dielectric material is formed.
Content of the present invention is based on the photonic crystal theory.Photonic crystal is new ideas and the new material (Phys.Rev.Lett.58 that late nineteen eighties puts forward, p.2059,1987), its basic thought is: the same with the electronics in the semiconductor, when light wave or electromagnetic wave are propagated in periodic dielectric structure, because the influence that periodic structure brings also can form band structure, i.e. photonic band gap; May there be band gap between band and the band.If the frequency of light wave just in time is in the band gap, have only can't in this kind structure, propagating of this frequency.The characteristics of photonic crystal maximum are to control light wave or electromagnetic flowing, and can bring various new application thus.Because its property that has, scientist is studying its new construction and characteristic in recent years always.How to utilize the property of photonic crystal to make high-performance and novel photonic device, optical communication device are one of focuses of world academia and industrial community.
Semiconductor quantum well is that early seventies has propositions such as L.Esaki.Two kinds of semiconductors are rearranged semiconductor quantum well according to semiconductor A/ semiconductor/B/ semiconductor A, because two kinds of semi-conductive electronic band structure differences, electronics or hole can be subjected to quantum limitation effect in trap, be limited in well region or at the interface, energy level generation quantum divide from, many new physical phenomenons have appearred.Thus, brought many new device application, semiconductor laser is one of them.
The objective of the invention is to develop a kind of photon crystal quantum trap structure that can regulate and control electromagnetic wave or light wave propagation, transmission and reflection characteristic and preparation method thereof.
The present invention constitutes photon crystal quantum trap structures with two kinds of photonic crystals with different photonic band structures, forms according to the series arrangement of photonic crystal A/ photonic crystal B/ photonic crystal A, as shown in Figure 1.Because the photonic band structures of middle photonic crystal is different with the photonic band structures of two ends photonic crystal, can regulate and control electromagnetic wave or light wave propagation, transmission and reflection characteristic.The photonic crystal of composition photon crystal quantum trap structure is formed by the material periodic arrangement of two kinds of differing dielectric constants, can be one dimension, two and three dimensions.If only periodic structure is arranged in a direction, be exactly 1-D photon crystal (as shown in Figure 2), only may have photon band gap in the cycle direction.If at two is that in-plane has periodically, then is 2 D photon crystal crystal (as shown in Figure 3), photon band gap may appear on the two-dimension periodic plane; If on three dimensions, have periodically (as shown in Figure 4), then be three-D photon crystal, might photon band gap appear in the total space.Concrete photonic band structures and dimension, structure, specific inductive capacity ratio are relevant with dutycycle.Know the photonic band structures of certain photonic crystal, the simple formula of neither one must be separated maxwell equation by Theoretical Calculation and get (Photoniccrystals, Princeton University Press, Princeton, 1995).The ratio of the specific inductive capacity of two kinds of dielectric materials of formation photonic crystal can change between 1.2 to 20; Two kinds of shared space proportions of dielectric material can change between 0.05 to 0.95.Dielectric material can be inorganic material, organic material, insulating material or semiconductor material etc., for example glass, organic glass, silicon, gallium arsenide, polystyrene, tellurium etc.
When preparing, photon crystal quantum trap structure of the present invention can above-mentioned scope dielectric material repetition period plated film be made the 1-D photon crystal quantum well structure with plated film or steaming degree method.Plated film and steamings degree method are the prior aries of using at present, and thickness can be decided by the desired structure performance, from 0.1 micron to 100 microns variation, the repetition period number is in 1～50 range.
As if the hole of on a kind of dielectric material, vertically boring different-diameter with machine drilling, semiconductor etching method, or manually build with two kinds of different dielectric rods, and repeat several cycles, then can form the 2 D photon crystal quantum well structure, have special optical property.
If use the holes of machine drilling, semiconductor etching method three different directions brill different-diameters, or manually build, and repeat several cycles, then can form the three-D photon crystal quantum well structure with two kinds of different dielectric rods in a kind of dielectric material upper edge.
This photon crystal quantum trap structure also has characteristics: band structure and periodic structure length (grating constant) have scaling property, and promptly operation wavelength and grating constant are inversely proportional to.Therefore, can regulate the grating constant of photonic crystal, make the working range of photon crystal quantum trap cover ultraviolet, visible light, infrared, in wave bands such as infrared, far infrared, microwave.Can change from 0.1 micron to the rice as Cycle Length.When Cycle Length when between 0.3 micron, changing for 0.1 micron, the energy gap of photon crystal quantum trap is about visible light; When Cycle Length when between 300 microns, changing for 0.3 micron, the energy gap of photon crystal quantum trap is about infrared band; When Cycle Length when between 3 meters, changing for 300 microns, the energy gap of photon crystal quantum trap is about microwave or the above wave band of microwave.
The repetition period number of photonic crystal A generally requires 3～50 in the photon crystal quantum trap structure, and the repetition period number of photonic crystal B can change from 1 to 50 according to actual needs.Periodic structure influence and the photonic band gap that forms can modulated light wave transport property, for example change both periodicities of B of quantum well region, can change the transport property in the photon band gap frequency of A; And for example change permittivity ratio, the dutycycle of two kinds of dielectric materials, make the photon band gap of two kinds of photonic crystals that different arrangements be arranged, thereby the transport property of modulated light wave, obtain required transport property and appearance such as various new physical phenomenons such as selective transmission, reflection, photon energy level quantizations, break new ground for the research and the application of optoelectronic areas, can utilize this structure to make various photonic devices.
Photonic band structures and dimension, structure, specific inductive capacity ratio are relevant with dutycycle, obtain having certain photonic band structures, need separate maxwell equation and obtain, and the present invention illustrates with embodiment.
Fig. 1. the photon crystal quantum trap structure synoptic diagram is formed by the series arrangement of two kinds of photonic crystals with different photonic band structures according to photonic crystal A/ photonic crystal B/ photonic crystal A.What form photon crystal quantum trap can be one dimension, two and three dimensions photonic crystal.
Fig. 2. the 1-D photon crystal synoptic diagram is formed a dimension direction periodic arrangement by two kinds of dielectric materials.
Fig. 3. the 2 D photon crystal synoptic diagram is formed two dimension direction periodic arrangement by two kinds of dielectric materials.
Fig. 4. the three-D photon crystal synoptic diagram is formed three dimension direction periodic arrangement by two kinds of dielectric materials.
Fig. 5. the band structure figure of the 1-D photon crystal quantum well structure of embodiment one, frequency reduction unit, ν is a frequency, and a is a periodic structure length, and c is the light velocity.
Fig. 6. 2 D photon crystal quantum well structure synoptic diagram.
Embodiment one: the 1-D photon crystal quantum well structure is selected two kinds of dielectric materials for use: polystyrene (specific inductive capacity is 2.56) and tellurium (specific inductive capacity is 21.16).Expenditure film method alternating growth polystyrene and tellurium are grown 5 cycles.The fixing ratio of the thickness of polystyrene and tellurium, for example 0.8, obtain photonic crystal A.Then on this basis, same expenditure film method alternating growth polystyrene and tellurium, the fixing ratio of the thickness of polystyrene and tellurium, for example 0.2, grow 5 cycles, obtain photonic crystal B.The photonic crystal A in 5 cycles at last grows.So just produce the 1-D photon crystal quantum well.Obtain band structure as shown in Figure 5 like this.Can change the ratio of the thickness of two kinds of dielectric materials among photonic crystal A and the B, make the photon band gap of A, B staggered or separate fully.Ratio how to choose thickness obtains desiredly being with arrangement architecture, must obtain concrete being with by separating maxwell equation, by regulating recently obtaining of thickness.Can also change grating constant is that Cycle Length is realized different-waveband.As grating constant is 3 microns, and then service band is greatly about 10 microns; If grating constant is 1 centimetre, then service band is greatly about 3 centimetres.Embodiment two: the 2 D photon crystal quantum well structure can adopt the method for machine drilling or semiconductor technology, forms the 2 D photon crystal quantum well structure at dielectric material or, as shown in Figure 6 at semiconductor-based the end.The difference of two kinds of different photonic crystals is the in different size of airport, therefore has different band structures.The size that can regulate airport realizes desired band structure.The size of airport must obtain concrete being with by separating maxwell equation, chooses according to desired can bringing.
Embodiment three: the three-D photon crystal quantum well structure
Similar with two dimension, can adopt the method for machine drilling or semiconductor technology, form the three-D photon crystal quantum well structure at dielectric material or at semiconductor-based the end.The difference of two kinds of different photonic crystals is the grating constant difference, therefore has different band structures.Can regulating cycle length, the space of dielectric material occupies ratio and realizes desired band structure.
Claims (6)
1. the photonic crystal of a quantum well structure, form by the dielectric material periodic arrangement, it is characterized in that two kinds of dielectric materials are according to one dimension, two and three dimensions periodic arrangement and constitute one dimension, two and three dimensions photonic crystal, photonic crystal is arranged according to photonic crystal A/ photonic crystal B/ photonic crystal A, and the ratio in the space that two kinds of dielectric materials are shared is 0.05-0.95.
2. the photonic crystal of quantum well structure according to claim 1 is characterized in that the operating frequency range of this photon crystal quantum trap structure is from the ultraviolet to the microwave.
3. the photonic crystal of quantum well structure according to claim 1, the repetition period that it is characterized in that preparing two kinds of dielectric materials of photonic crystal A is 3～50; The repetition period of two kinds of dielectric materials of preparation photonic crystal B is 1～50.
4. the preparation method of the photonic crystal of quantum well structure according to claim 1, it is characterized in that with film plating process the dielectric material of above-mentioned scope making the 1-D photon crystal quantum well structure by the order plated film that photonic crystal A/ photonic crystal B/ photonic crystal A arranges.
5. the preparation method of the photonic crystal of quantum well structure according to claim 1, it is characterized in that this structure of using in microwave region with machine drilling or artificial building method, with photoetching method the dielectric material of above-mentioned scope is got the 2 D photon crystal quantum well structure by the sequential system that photonic crystal A/ photonic crystal B/ photonic crystal A arranges in infrared and this structure that visible light wave range uses.
6. the preparation method of the photonic crystal of quantum well structure according to claim 1, it is characterized in that this structure of using in microwave region with machine drilling or artificial building method, with photoetching method the dielectric material of above-mentioned scope is got the three-D photon crystal quantum well structure by the sequential system that photonic crystal A/ photonic crystal B/ photonic crystal A arranges in infrared and this structure that visible light wave range uses.
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| CN1325947C (en) * | 2004-02-03 | 2007-07-11 | 复旦大学 | Method for regulating position of photon crystal forbidden band |
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| CN1332239C (en) * | 2004-02-03 | 2007-08-15 | 复旦大学 | Method for regulating two dimensional photon crystal forbidden band |
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| CN100337145C (en) * | 2004-06-22 | 2007-09-12 | 天津大学 | A method and apparatus for producing three-dimensional photon crystal structure |
| CN100421272C (en) * | 2005-06-14 | 2008-09-24 | 中国科学院半导体研究所 | Method for making GaN-based blue light light-emitting diode with photon microstructure |
| CN105204116B (en) * | 2015-10-14 | 2018-08-24 | 西安电子科技大学 | A kind of 2 D photon crystal of linear gradient structure |
| CN113650290A (en) * | 2021-07-07 | 2021-11-16 | 佛山(华南)新材料研究院 | Preparation method of photonic crystal based on 3D printing and photonic crystal |
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