CN110391283B - Organic light emitting display panel and organic light emitting display device - Google Patents
Organic light emitting display panel and organic light emitting display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Abstract
The embodiment of the invention discloses an organic light-emitting display panel and an organic light-emitting display device, wherein a source electrode or a drain electrode of a thin film transistor of the organic light-emitting display panel extends to form a first electrode which has a hollow structure, so that the first electrode of an organic light-emitting unit is not required to be additionally formed, the film structure of the organic light-emitting display panel can be simplified, and the organic light-emitting display panel can realize double-sided light emission; meanwhile, the first electrode of the organic light-emitting unit is formed by extending the source electrode or the drain electrode of the thin film transistor, and the source electrode or the drain electrode of the thin film transistor has lower sheet resistance compared with other film layers of the thin film transistor, so that the organic light-emitting unit has lower voltage drop, the light-emitting efficiency of the organic light-emitting unit can be improved, the power consumption of the organic light-emitting display panel can be reduced, and the display effect of the organic light-emitting display panel can be improved.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to an organic light emitting display panel and an organic light emitting display device.
Background
The Organic Light-Emitting Diode (OLED) display device has the characteristics of lightness, thinness, self-luminescence, rich colors and the like, and has the advantages of high response speed, wide viewing angle, low power consumption, capability of realizing flexible display and the like, so the OLED display device has wide application prospect.
Although the OLED display device has a light and thin characteristic compared to other display devices, under the current trend of light and thin display devices, the thickness of the display device is further reduced without affecting normal display luminescence of the display device, which is an urgent problem to be solved in the development process of the OLED display panel.
Disclosure of Invention
Embodiments of the present invention provide an organic light emitting display panel and an organic light emitting display device, so that the organic light emitting display panel has a more excellent display light emitting effect on the premise of satisfying the trend of light weight and thinness.
In a first aspect, an embodiment of the present invention provides an organic light emitting display panel, including:
a base substrate;
a thin film transistor and an organic light emitting unit on one side of the substrate base plate; the thin film transistor comprises a source electrode and a drain electrode;
the organic light-emitting unit comprises a first electrode, a light-emitting layer and a second electrode which are arranged in a stacked mode, wherein the light-emitting layer is located between the first electrode and the second electrode, and the second electrode is located on one side, far away from the substrate, of the first electrode;
the source electrode or the drain electrode extends to form the first electrode, the first electrode comprises a hollow structure, and the light-emitting layer and the second electrode are overlapped with the hollow structure.
In a second aspect, an embodiment of the present invention provides an organic light emitting display panel including the above-described organic light emitting display panel.
The embodiment of the invention provides an organic light-emitting display panel and an organic light-emitting display device, wherein a thin film transistor of the organic light-emitting display panel comprises a source electrode and a drain electrode, an organic light-emitting unit of the organic light-emitting display panel comprises a first electrode, a second electrode and a light-emitting layer positioned between the first electrode and the second electrode; the second electrode is positioned on one side of the first electrode far away from the substrate base plate; the source electrode or the drain electrode of the thin film transistor is extended to form the first electrode, so that the first electrode of the organic light-emitting unit does not need to be additionally formed, and compared with the condition that a film layer of the light-emitting unit of the organic light-emitting display panel and a film layer of the thin film transistor are respectively formed in the prior art, the film layer structure of the organic light-emitting display panel can be simplified, and the organic light-emitting display panel is light and thin; meanwhile, the first electrode of the organic light-emitting unit is formed by extending the source electrode or the drain electrode of the thin film transistor, and the source electrode or the drain electrode of the thin film transistor has lower sheet resistance compared with other film layers of the thin film transistor, so that the organic light-emitting unit has lower voltage drop, the light-emitting efficiency of the organic light-emitting unit can be improved, the power consumption of the organic light-emitting display panel can be reduced, and the display effect of the organic light-emitting display panel can be improved. In addition, the first electrode of the organic light-emitting display panel is provided with a hollow structure, and the hollow structure is overlapped with the light-emitting layer and the first electrode of the organic light-emitting unit, so that double-sided light emission of the organic light-emitting display panel can be realized.
Drawings
Fig. 1 is a schematic structural view of an organic light emitting display panel of the prior art;
fig. 2 is a schematic structural diagram of an organic light emitting display panel according to an embodiment of the present invention;
fig. 3 is a schematic top view of a first electrode hollow structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of an organic light emitting display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The organic light emitting display panel generally includes a thin film transistor and an organic light emitting unit, and the thin film transistor and the organic light emitting unit are stacked, and a source or a drain of the thin film transistor is electrically connected to an anode of the organic light emitting unit through a via hole to provide a driving signal for the organic light emitting unit, so that the organic light emitting unit displays light.
In the prior art, in order to make the organic light emitting unit satisfy the trend of light and thin, the active layer of the thin film crystal light is extended to form the anode of the organic light emitting unit in the organic light emitting display panel. Fig. 1 is a schematic structural diagram of an organic light emitting display panel in the prior art. As shown in fig. 1, the organic light emitting display panel includes a substrate base 11, a thin film transistor T and an organic light emitting unit P at one side of the substrate base 11, the thin film transistor T may include an active layer M, a gate electrode G, a source electrode S and a drain electrode D; the organic light emitting unit P includes an anode P1, a cathode P2, and a light emitting layer P3 between the anode P1 and the cathode P2. By extending the active layer M to form the anode P1 of the organic light emitting unit P, the thickness of the organic light emitting display panel is reduced without additionally providing a film layer of the anode P1 of the organic light emitting unit P.
The active layer M may be a metal oxide semiconductor material, which generally has a higher resistivity, and even if the active layer M is extended to be a part of the anode P1 for conducting, the anode P1 still has a higher resistivity compared to the anode of the metal material. For example, the active layer M may be indium gallium zinc oxide, and a portion of the active layer M extending to form the anode P1 is subjected to plasma treatment in a helium atmosphere to realize electrical conduction of the indium gallium zinc oxide, where the sheet resistance of the indium gallium zinc oxide (film thickness is 70nm) is about 1000 Ω, and the sheet resistance of the metal anode, for example, a metal silver electrode (film thickness is 100nm) is about 0.4 Ω. Thus, compared with the metal electrode, the scheme of extending the active layer M to directly form the anode P1 has the advantage that even if the conductive process is performed, the resistance at the anode P1 is still large, and the pixel signal has a large voltage drop at this position, which affects the normal display and reduces the display effect of the display panel.
In view of the foregoing technical problem, an embodiment of the present invention provides an organic light emitting display panel, including:
a base substrate;
the thin film transistor and the organic light-emitting unit are positioned on one side of the substrate base plate; the thin film transistor comprises a source electrode and a drain electrode;
The organic light-emitting unit comprises a first electrode, a light-emitting layer and a second electrode which are arranged in a stacked mode, wherein the light-emitting layer is located between the first electrode and the second electrode, and the second electrode is located on one side, far away from the substrate, of the first electrode;
the source electrode or the drain electrode extends to form the first electrode, the first electrode comprises a hollow structure, and the light-emitting layer and the second electrode are overlapped with the hollow structure.
By adopting the technical scheme, on the first hand, the source electrode or the drain electrode of the thin film transistor is extended to form the first electrode of the organic light-emitting unit, and the first electrode of the organic light-emitting unit does not need to be additionally formed, so that the film structure of the organic light-emitting display panel is simplified, and the organic light-emitting display panel is favorably thinned; in a second aspect, the source and the drain of the thin film transistor are usually made of a metal material, and compared with other film layers of the thin film transistor, the source and the drain of the thin film transistor have lower resistivity, and the source or the drain of the thin film transistor extends to form a first electrode of the organic light-emitting unit, so that the voltage drop in the transmission process of a light-emitting signal is reduced, the light-emitting efficiency of the organic light-emitting unit is improved, the power consumption of the organic light-emitting display panel is reduced, and the display effect of the organic light-emitting display panel is improved; in addition, the source electrode or the drain electrode of the thin film crystal light is extended to form the first electrode of the organic light-emitting unit, and the hollow structure is arranged at the overlapping position of the first electrode and the light-emitting layer and the second electrode, so that the light emitted by the light-emitting layer can realize top light emission through the second electrode, and bottom light emission can be realized through the hollow structure of the first electrode, and double-sided display can be realized through the organic light-emitting display panel.
The organic light emitting unit includes a first electrode, a second electrode, and a light emitting layer located between the first electrode and the second electrode, and the organic light emitting unit may be, for example, an organic light emitting diode, the first electrode may be an anode of the organic light emitting diode, and the second electrode may be a cathode of the organic light emitting diode; similarly, the first electrode may be a cathode of the organic light emitting diode, and the second electrode may be an anode of the organic light emitting diode, which is not specifically limited in this embodiment of the present invention. For convenience of description, the technical solutions of the embodiments of the present invention are described in the embodiments of the present invention by taking the first electrode as an anode and the second electrode as a cathode.
The above is the core idea of the present invention, and the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiment of the present invention. All other embodiments, which can be obtained by a person skilled in the art based on the embodiments of the present invention without any creative work, belong to the protection scope of the present invention.
Fig. 2 is a schematic structural diagram of an organic light emitting display panel according to an embodiment of the present invention. As shown in fig. 2, the organic light emitting display panel 100 includes a substrate 31, a thin film transistor 10 and an organic light emitting unit 20 on one side of the substrate. The thin film transistor 10 includes a source electrode 12 and a drain electrode 13, the organic light emitting unit 20 includes a first electrode 21, a light emitting layer 23, and a second electrode 22, which are stacked, the light emitting layer 23 is located between the first electrode 21 and the second electrode 22, and the second electrode 22 is located on a side of the first electrode 21 away from the substrate 31. The source electrode 12 or the drain electrode 13 of the thin film transistor 10 extends to form a first electrode 21 of the organic light emitting unit 20, the first electrode 21 includes a hollow structure 201, and both the light emitting layer 23 and the second electrode 21 overlap the hollow structure 201.
Illustratively, as shown in fig. 2, the organic light emitting unit 20 of the organic light emitting display panel 100 includes a first electrode 21, a second electrode 22, and a light emitting layer 23 between the first electrode 21 and the second electrode 22. When the driving electrodes are applied to the first electrode 21 and the second electrode 22 of the organic light emitting unit 20, corresponding carriers are injected into the light emitting layer 23, and the carriers recombine to emit light in the light emitting layer 23, thereby realizing display light emission of the organic light emitting unit. Since the organic light emitting display panel 100 includes a plurality of organic light emitting units 20, when a frame is displayed, the display light emitting condition of each organic light emitting unit 20 is different, and the region where the light emitting layer 23 is located is the light emitting region of the organic light emitting unit 20, in order to enable each organic light emitting unit 20 to be controlled independently, the pixel defining layer 35 is further disposed on the side of the first electrode 21 away from the substrate 31 to define the forming position of the light emitting layer 23. The first electrode 21 of the organic light emitting unit 100 is formed by extending the source electrode 12 or the drain electrode 13 of the thin film transistor 10 in the organic light emitting display panel 100. The second electrode 22 of the organic light emitting unit 100 is located on a side of the first electrode 21 away from the substrate 31, the source electrode 12 or the drain electrode 13 of the thin film crystal light is extended to form the first electrode 21, and the light emitting layer 23 and the second electrode 22 may be sequentially formed on a side of the first electrode 21 away from the substrate 31.
The thin film transistor 10 of the organic light emitting display panel 100 includes a source electrode 12 and a drain electrode 13, and the thin film transistor 10 may further include an active layer 11, a gate electrode 15, and a gate insulating layer 14 between the gate electrode 15 and the active layer 11; meanwhile, the organic light emitting display panel 100 further includes a planarization layer 34 on a side of the source and drain electrodes 12 and 13 remote from the base substrate 11. The gate electrode 15 of the thin film transistor 10 may be located on a side of the active layer 11 away from the substrate 31 to form a top gate thin film transistor, and the gate electrode 15 of the thin film transistor 10 may also be located on a side of the substrate 31 close to the active layer to form a bottom gate thin film transistor. When the gate 15 of the thin film transistor is located on the side of the active layer 11 away from the substrate 31, an insulating layer may be formed on the side of the active layer 11 away from the substrate 31, and then a gate metal layer may be formed on the side of the insulating layer away from the active layer 11, and the gate metal layer and the insulating layer may be etched at the same time to form the gate insulating layer 14 and the gate 15, thereby facilitating to reduce the number of masks and etching steps, reducing the cost, and improving the efficiency.
Here, the thin film transistor 10 may be a driving transistor in a pixel driving circuit corresponding to the organic light emitting unit 20, or other transistors that need to be electrically connected to the organic light emitting unit 20. When the thin film transistor 10 is a driving transistor corresponding to the organic light emitting unit 20, the first electrode 21 of the organic light emitting unit 20 needs to be electrically connected to the source electrode 12 or the drain electrode 13 of the thin film transistor 10, that is, when the thin film transistor 10 is a P-type transistor, the first electrode 21 of the organic light emitting unit 20 needs to be electrically connected to the drain electrode of the thin film transistor 10; when the thin film transistor 10 is an N-type transistor, the first electrode 21 of the organic light emitting unit 20 needs to be electrically connected to the source of the thin film transistor 10.
Taking the thin film transistor 10 as a P-type transistor as an example, the drain 13 of the thin film transistor 10 extends to form the first electrode 21 of the organic light emitting unit 20, on one hand, the electrical connection between the organic light emitting unit 20 and the drain 13 of the thin film transistor 10 can be directly realized, and meanwhile, a film layer of the first electrode 21 of the organic light emitting unit 20 does not need to be additionally formed in the organic light emitting display panel 100, so that the film layer structure of the organic light emitting display panel 20 can be integrally simplified, and the light and thin of the organic light emitting display panel 20 is facilitated; on the other hand, the material of the active layer 11 of the thin film transistor 10 is usually an oxide semiconductor material or a silicon material, while the material of the source electrode 12 and the drain electrode 13 of the thin film transistor 10 is usually a metal material, such as metal aluminum, metal titanium, an alloy, etc., and the resistivity of the oxide semiconductor material is usually much greater than the resistivity of the metal material, so that the first electrode 21 of the organic light emitting unit 20 is formed by extending the drain electrode 13 of the thin film transistor 10, and the first electrode 21 has a smaller sheet resistance compared to the active layer of the thin film transistor, so that the voltage drop when the first electrode 21 transmits a signal can be reduced, the light emitting efficiency of the organic light emitting unit 20 can be improved, the power consumption of the organic light emitting display panel 100 can be reduced, and the display effect of the organic light emitting display panel 100 can be improved.
In addition, the second electrode 22 of the organic light emitting unit 20 is generally a transparent electrode having a high transmittance, and the first electrode 21 formed by extending the drain electrode of the thin film transistor 10 has a low transmittance. In the embodiment of the invention, the first electrode 21 of the organic light emitting unit 20 is provided with the hollow-out structure 201, and as shown in fig. 3, the hollow-out structure 201 may be a region (fig. 3 (a)) surrounded by the first electrode 21, a region (fig. 3 (b)) half-surrounded by the first electrode 21, a grid-shaped structure (not shown), or the like. Through setting up hollow out construction 201 on first electrode 21 to the light that makes luminescent layer 23 send can pass through second electrode 22, realizes top luminescence, also can realize the end luminescence through hollow out construction 201 of first electrode 21 simultaneously, thereby makes organic light emitting display panel 100 realize two-sided luminous, further improves organic light emitting display panel's display effect.
In addition, the organic light emitting display panel 100 may further include an encapsulation layer 36, an interlayer insulating layer 33 between the gate electrode 15 and the source and drain electrodes 12 and 13, and a buffer layer 32 between the substrate base 31 and the active layer 11.
It should be noted that fig. 2 is only an exemplary diagram of an embodiment of the invention, and on the basis of the core invention of the invention, the film structure of the organic light emitting display panel 100 may be increased or decreased, which is not specifically limited in the embodiment of the invention. Wherein, fig. 2 only exemplifies the case where the drain electrode 13 of the thin film transistor 10 extends to form the first electrode 21 of the organic light emitting unit 20; similarly, the source electrode 12 of the thin film transistor 10 may also extend to form the first electrode 21 of the organic light emitting unit 20. For convenience of description, the embodiment of the present invention is described by taking the case where the drain electrode 13 of the thin film transistor 10 extends to form the first electrode 21 of the organic light emitting unit 20.
Optionally, the organic light emitting display panel includes, in addition to the thin film transistor and the organic light emitting unit, an insulating layer, where the insulating layer is located between a source and/or a drain of the thin film transistor and the substrate, the insulating layer has a first opening, and the organic light emitting unit overlaps the first opening; the source electrode or the drain electrode of the thin film transistor extends towards the first opening and extends into the first opening through the side wall of the first opening to form a first electrode of the organic light-emitting unit.
Illustratively, with continued reference to fig. 2, the insulating layer of the organic light emitting display panel 100 is, for example, an interlayer insulating layer 33 between the source and drain electrodes 12 and 13 and the gate electrode 15. A first opening may be disposed on the interlayer insulating layer 33 between the base substrate 31 and the source and drain electrodes 12 and 13 of the thin film transistor 10, a sidewall 331 of the first opening may have a certain slope, and the first opening may overlap the organic light emitting unit 20, i.e., the first opening may overlap the first electrode 21, the light emitting layer 23, and the second electrode 22 of the organic light emitting unit 20. The light emitted from the light-emitting layer 23 of the organic light-emitting unit 20 can transmit through the hollow-out structures 201 of the first electrodes 21 and the second electrodes 22, and the light emitted from the light-emitting layer 23 is not a parallel beam, but is scattered in all directions. Since the drain 13 of the thin film transistor 10 is made of a metal material, the drain 13 of the thin film transistor 10 extends toward the first opening, and the first electrode 21 of the organic light emitting unit 20 is formed along the sidewall 331 of the first opening, so that when the light emitting layer 23 of the organic light emitting unit 20 emits light, the light scattered toward the sidewall 331 of the first opening can be reflected on the first electrode 21, and then bottom light emission can be realized through the hollow structure of the first electrode 21, and/or top light emission can be realized through the second electrode 22, thereby improving the utilization rate of the light, and being beneficial to further improving the display effect of the organic light emitting display panel 100.
Alternatively, with continued reference to fig. 2, in the organic light emitting display panel 100, in addition to the insulating layer 33 disposed between the source electrode 12 and/or the drain electrode 13 of the thin film transistor 10 and the base substrate 31, a buffer layer 32 is further disposed between the thin film transistor 10 and the base substrate 31, the first opening of the insulating layer 33 exposes the buffer layer 32, and the first electrode 21 of the organic light emitting unit 20 is in contact with the buffer layer 32.
Specifically, the first electrode 21 of the organic light emitting unit 20 directly contacts the buffer layer 32, so that light emitted by the light emitting layer 23 of the organic light emitting unit 20 can sequentially pass through the hollow structure 201 of the first electrode 21, the buffer layer 32 and the substrate 31 to realize bottom emission, and compared with a scheme in which the first electrode of the organic light emitting unit contacts other insulating layers on the side of the buffer layer away from the substrate, the first electrode 21 of the organic light emitting unit 20 directly contacts the buffer layer 32, so that a film layer through which light emitted by the light emitting layer 23 needs to pass is reduced during bottom emission, thereby increasing light transmittance, and facilitating 21 to increase the display effect of the display panel.
In the embodiment of the invention, as shown in fig. 2, the organic light emitting display panel 100 includes both the planarization layer 34 and the pixel defining layer 35. The planarization layer 34 may be used to protect and planarize the underlying thin film transistors and other driving circuit layers of the organic light display panel 100, and the pixel defining layer 35 is used to prevent or reduce color mixing between pixels formed by the organic light emitting units 20. In addition, the planarization layer 34 of the organic light emitting display panel 100 may also be multiplexed as a pixel defining layer.
Optionally, fig. 4 is a schematic structural diagram of another organic light emitting display panel provided in an embodiment of the present invention. The same in fig. 4 as in fig. 2, reference may be made to the description of fig. 2, and only the differences in fig. 4 from fig. 2 will be described here. As shown in fig. 4, in the organic light emitting display panel 100, in addition to the insulating layer 33 disposed between the source electrode 12 and/or the drain electrode 13 of the thin film transistor 10 and the base substrate 31, the organic light emitting display panel 100 further includes a planarization layer 34 disposed on a side of the thin film transistor 10 away from the base substrate 31, the planarization layer 34 including a second opening, and the second opening overlapping the first opening; the second electrode 22 of the organic light emitting unit 20 covers the planarization layer 34 and the second opening of the planarization layer 34. Therefore, an additional pixel definition layer is not required, and the thickness of the organic light emitting display panel 100 is further reduced, which is beneficial to the thinning of the organic light emitting display panel 100.
For convenience of description, the following description will be made by taking the case where the planarization layer of the organic light emitting display panel is multiplexed as the pixel defining layer.
On the basis of the foregoing embodiment, optionally, fig. 5 is a schematic structural diagram of another organic light emitting display panel provided in the embodiment of the present invention. As shown in fig. 5, the organic light emitting display panel 100 further includes a transparent conductive layer 24; the transparent conductive layer 24 connects the first electrode 21 and the light-emitting layer 23.
Specifically, the first electrode 21 of the organic light emitting unit 20 is formed by extending the drain electrode 13 of the thin film transistor 10, and the material of the drain electrode 13 of the thin film transistor 10 is, for example, a metal material. By providing the transparent conductive layer 24 between the first electrode 21 and the light emitting layer 23, the work functions of the light emitting layer 23 and the first electrode 21 can be matched by the transparent conductive layer 24, and the light emitting efficiency of the organic light emitting unit 20 is improved. The material of the transparent conductive layer 24 may include at least one of indium tin oxide, aluminum zinc oxide, and indium zinc oxide, for example. The transparent conductive layer 24 has high light transmittance, and even if the transparent conductive layer 24 is disposed between the first electrode 21 and the light emitting layer 23, the light emitting direction of the organic light emitting unit 20 is not affected, and the organic light emitting display panel 100 can realize double-sided light emission.
On the basis of the above embodiments, optionally, the active layer of the thin film transistor of the organic light emitting display panel is located between the insulating layer and the substrate. The active layer extends to the first opening, contacts the first electrode, and overlaps the organic light emitting unit.
Exemplarily, fig. 6 is a schematic structural diagram of another organic light emitting display panel provided in an embodiment of the present invention. As shown in fig. 6, the drain electrode 13 of the thin film transistor 10 is extended to form the first electrode 21 of the organic light emitting unit 20, while the active layer 11 of the thin film transistor 10 is extended to contact the first electrode 21 of the organic light emitting unit 20. In this way, the active layer 11 and the drain electrode 13 of the thin film transistor 10 are simultaneously extended, the contact area between the active layer 11 and the drain electrode 13 of the thin film transistor 10 is increased, and the contact resistance between the active layer 11 and the drain electrode 13 can be reduced, compared with the scheme that only the active layer of the thin film transistor is extended to form the first electrode of the organic light emitting unit in the prior art, the embodiment of the invention can reduce the voltage drop transmitted from the thin film transistor 10 to the organic light emitting unit 20, thereby improving the light emitting efficiency of the organic light emitting unit 20, being beneficial to improving the display effect of the organic light emitting display panel 100, and reducing the power consumption of the organic light emitting display panel 100. In which the active layer of the thin film transistor 10 overlapping the first electrode 21 of the organic light emitting unit 20 may be subjected to a conductive treatment to improve the conductive capability of the active layer 11, thereby improving the light emitting efficiency of the organic light emitting unit 20 and reducing the power consumption of the organic light emitting display panel 100. Specifically, the active layer portion overlapping the first electrode 21 may be electrically conducted while the source and drain regions of the active layer other than the channel region are electrically conducted, and thus, an additional process is not required.
Alternatively, with continued reference to fig. 6, the active layer 11 of the thin film transistor 10 is a transparent active layer.
Specifically, the transparent active layer 11 overlaps with the organic light emitting unit 20, and the transparent active layer 11 is located on one side of the light emitting layer 23 of the organic light emitting unit 20 close to the substrate 31, so that the transparent active layer 11 does not affect the light emitted by the light emitting layer 23 to exit towards one side of the substrate 31, and the organic light emitting display panel can realize double-sided light emission. With such an arrangement, the first electrode 21 of the organic light emitting unit 20 is formed by extending the drain electrode 13 of the thin film transistor 10, and the active layer 11 of the thin film transistor 10 is in contact with the first electrode 21, so that the voltage drop of the organic light emitting unit 20 can be reduced on the basis of simplifying the film structure of the organic light emitting display panel 100, the light emitting efficiency of the organic light emitting unit 20 can be improved, the display effect of the organic light emitting display panel 100 can be improved, the power consumption of the organic light emitting display panel 100 can be reduced, the transmittance of light emitted by the light emitting layer 23 of the organic light emitting unit 20 can be ensured, and the organic light emitting display panel 100 can realize double-sided light emission.
In addition, when the drain electrode 13 of the extended thin film transistor 10 forms the first electrode 21 of the organic light emitting unit 20 and the active layer 11 of the extended thin film transistor 10 is in contact with the first electrode 21, the active layer 11 may also be a non-transparent active layer.
Fig. 7 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention. As shown in fig. 7, the active layer 11 of the thin film transistor 10 is a non-transparent active layer, and the material of the non-transparent active layer 11 may include at least one of single crystal silicon, amorphous silicon, and polycrystalline silicon. In order not to affect the bottom emission of the organic light emitting display panel 100, an opening structure 201 is disposed on the non-transparent active layer 11 of the thin film transistor 10, and the opening structure 201 overlaps with the hollow structure 201 of the first electrode 21. In this way, the organic light emitting unit 20 can emit light normally, and it is also ensured that the light emitted by the organic light emitting unit 20 can be emitted toward one side of the substrate 31, so that the organic light emitting display panel 100 can implement double-sided display.
When the drain electrode 13 of the thin film transistor 10 extends to form the first electrode 21 of the organic light emitting unit 20 and the active layer 11 of the thin film transistor 10 is in contact with the first electrode 21, a transparent conductive layer (not shown in fig. 6 and 7) may be disposed between the first electrode 21 and the light emitting layer 23 to match a work function between the first electrode 21 and the light emitting layer 23, regardless of whether the active layer 11 of the thin film transistor 10 is a transparent active layer, so as to improve the light emitting efficiency of the organic light emitting unit 20.
Optionally, an insulating pattern is arranged between the source electrode and/or the drain electrode of the thin film transistor and the substrate; the active layer of the thin film transistor comprises a source region and a drain region, and the source electrode and the drain electrode of the thin film transistor are respectively contacted with the source region and the drain region of the active layer; and the source electrode or the drain electrode contacts the source electrode region or the drain electrode region through the side wall of the insulating layer pattern and extends towards the organic light-emitting unit to form a first electrode.
Fig. 8 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention. As shown in fig. 8, the insulating layer between the source electrode 12 and/or the drain electrode 13 of the thin film transistor 10 and the base substrate 31 may include a gate insulating layer 14 and an interlayer dielectric layer 33. The gate insulating layer 14 and the gate electrode 15 may be formed by etching using the same mask, and the interlayer dielectric layer 33 on the side of the gate electrode 15 away from the substrate 31 may be patterned to form an insulating pattern, where the insulating pattern 33 exposes the drain region 131 of the active layer 11 and covers other regions of the active layer 11 of the thin film transistor 11. At this time, the drain electrode 13 of the thin film transistor 10 extends along the sidewall 332 of the insulating pattern 33 to contact the drain region 131 of the active layer 11, and continues to extend to form the first electrode 21 of the organic light emitting unit 20. In this way, the drain region 131 of the active layer 11 and the arrangement position of the first electrode 21 of the organic light emitting unit 20 can be exposed only by one etching, so that the manufacturing process of the organic light emitting display panel 100 can be simplified; meanwhile, a via hole electrically connecting the drain electrode 13 of the thin film transistor 10 and the drain region 131 of the active layer 11 does not need to be additionally arranged, so that the size of the thin film transistor 10 can be reduced, and further, the occupied area of the organic light emitting unit 20 is increased, and the display effect of the organic light emitting display panel 100 is improved.
In this way, the drain electrode 13 of the thin film transistor 10 is in contact with the drain region 131 of the active layer 11 along the sidewall 332 of the insulating layer pattern 33, and continues to extend to form the first electrode of the organic light emitting unit 20, and the first electrode 11 has the hollow structure 201, which can simplify the film structure of the organic light emitting display panel 100, reduce the size of the thin film transistor 10, and further facilitate to increase the occupied area of the organic light emitting unit 20, improve the display effect of the organic light emitting display panel 100, and enable the organic light emitting display panel 100 to realize double-sided display; meanwhile, the drain electrode 13 of the thin film transistor 10 has a lower resistivity than other film layers of the thin film transistor 10, so that compared with a scheme of extending other film layers of the thin film transistor to form the first electrode, the voltage drop of the organic light emitting unit 20 can be reduced, the light emitting efficiency of the organic light emitting unit 20 is improved, the power consumption of the organic light emitting display panel 100 is reduced, and the display effect of the organic light emitting display panel 100 is improved.
Exemplarily, fig. 9 is a schematic structural diagram of another organic light emitting display panel provided in an embodiment of the present invention. The same parts in fig. 9 as those in fig. 8 are not described again, and only different parts in fig. 9 and fig. 8 will be described here. As shown in fig. 9, the drain electrode 13 of the thin film transistor 10 extends to form the first electrode 21 of the organic light emitting unit 20, and at the same time, the active layer 11 of the thin film transistor 10 is extended to contact with the first electrode 21, so that the contact area between the active layer 11 of the thin film transistor 10 and the drain electrode 13 can be increased, and the contact resistance between the active layer 11 and the drain electrode 13 can be reduced. In which the active layer of the thin film transistor 10 overlapping the first electrode 21 of the organic light emitting unit 20 may be subjected to a conductive treatment to improve the conductive capability of the active layer 11, thereby improving the light emitting efficiency of the organic light emitting unit 20 and reducing the power consumption of the organic light emitting display panel 100. In fig. 9, the active layer 11 of the thin film transistor 10 may be a transparent active layer, and the active layer 11 of the thin film transistor 10 in the embodiment of the present invention may also be a non-transparent active layer.
Fig. 10 is a schematic structural diagram of another organic light emitting display panel according to an embodiment of the present invention. The same parts in fig. 10 as those in fig. 9 are not repeated herein, and only different parts in fig. 10 and fig. 9 will be described herein. As shown in fig. 10, when the active layer 11 of the thin film transistor 10 is a non-transparent active layer, in order to enable the organic light emitting display panel 100 to emit light on both sides, an opening structure 205 may be disposed at a position where the active layer 11 overlaps with the hollow structure 201 of the first electrode 21, so that light emitted by the organic light emitting unit 20 can pass through the opening structure 205 of the active layer 11 to achieve bottom emission.
Optionally, on the basis of the above embodiment, the organic light emitting display panel further includes a planarization layer, the planarization layer is located on a side of the thin film transistor away from the substrate, the planarization layer includes a second opening, and the second opening overlaps with the first electrode of the organic light emitting unit for defining a position of the organic light emitting unit.
Illustratively, taking fig. 8 as an example, the organic light emitting display panel 100 further includes a planarization layer 34, the planarization layer 34 is located on a side of the thin film transistor 10 away from the substrate 31, and the planarization layer 34 includes a second opening overlapping the first electrode 21 of the organic light emitting unit 20 for defining a position of the organic light emitting unit 20. Thus, the position of the organic light emitting unit 20 is defined by the planarization layer 34 of the organic light emitting display panel 100, that is, the planarization layer 34 of the organic light emitting display panel 100 is reused as the pixel definition layer of the organic light emitting display panel 100, and it is not necessary to additionally provide the pixel definition layer of the organic light emitting display panel 100, which can further simplify the film structure of the organic light emitting display panel 100 and is beneficial to the light and thin of the organic light emitting display panel 100.
Of course, in the embodiment of the present invention, without considering further simplification of the film structure of the organic light emitting display panel 100, a pixel defining layer (not shown in the drawings) may be further disposed on a side of the planarization layer 34 away from the base substrate 31, the pixel defining layer is provided with an opening structure, and the opening structure of the pixel defining layer overlaps with the second opening of the planarization layer 34 to define the position of the organic light emitting unit 20.
In addition, in an aspect where the drain electrode 13 of the thin film transistor 10 is in contact with the drain region 131 of the active layer 11 along the sidewall 332 of the insulating layer pattern 33 and continues to extend to form the first electrode 21 of the organic light emitting unit 20, a transparent conductive layer (not shown) may also be disposed between the first electrode 21 of the organic light emitting unit 20 and the light emitting layer 23 to match a work function between the first electrode 21 and the light emitting layer 23.
Embodiments of the present invention further provide an organic light emitting display device, where the organic light emitting display device includes the organic light emitting display panel provided in the embodiments of the present invention, and therefore the organic light emitting display device also has the beneficial effects of the organic light emitting display panel provided in the embodiments of the present invention, and the same points can be understood with reference to the above, and are not described in detail below.
Exemplarily, fig. 11 is a schematic structural diagram of an organic light emitting display device according to an embodiment of the present invention. As shown in fig. 11, the display device 200 includes an organic light emitting display panel 100. The organic light emitting display device 200 may be a mobile phone, a tablet computer, a smart wearable device (e.g., a smart watch), and other types of display devices known to those skilled in the art, which is not limited in the embodiments of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (6)
1. An organic light emitting display panel, comprising:
a substrate base plate;
The thin film transistor and the organic light-emitting unit are positioned on one side of the substrate base plate; the thin film transistor comprises a source electrode and a drain electrode;
the organic light-emitting unit comprises a first electrode, a light-emitting layer and a second electrode which are arranged in a stacked mode, wherein the light-emitting layer is located between the first electrode and the second electrode, and the second electrode is located on one side, far away from the substrate, of the first electrode;
the source electrode or the drain electrode extends to form the first electrode, the first electrode comprises a hollow structure, and the light-emitting layer and the second electrode are overlapped with the hollow structure;
the organic light emitting display panel further includes: an insulating layer between the source electrode and/or the drain electrode and the substrate base plate, the insulating layer having a first opening, the organic light emitting unit overlapping the first opening; the source electrode or the drain electrode extends towards the first opening and extends into the first opening through the side wall of the first opening to form the first electrode; the thin film transistor further includes an active layer between the insulating layer and the substrate, the active layer extending to the first opening, contacting the first electrode, and overlapping the organic light emitting unit; the active layer comprises an opening structure, and the opening structure is overlapped with the hollow structure of the first electrode.
2. The organic light-emitting display panel according to claim 1, further comprising:
the planarization layer is positioned on one side, away from the substrate, of the thin film transistor and comprises a second opening, and the second opening is overlapped with the first opening;
the second electrode covers the planarization layer and the second opening.
3. The organic light-emitting display panel according to claim 1, further comprising:
a transparent conductive layer;
the first electrode is connected with the light emitting layer through the transparent conductive layer.
4. The organic light-emitting display panel according to claim 1,
the overlapped part of the active layer and the first electrode is formed by conducting treatment on a semiconductor material.
5. The organic light-emitting display panel according to claim 1,
the active layer is a transparent active layer.
6. An organic light emitting display device comprising the organic light emitting display panel according to any one of claims 1 to 5.
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111489658B (en) * | 2020-04-23 | 2022-04-08 | 上海天马微电子有限公司 | Double-sided display panel, manufacturing method thereof and double-sided display device |
| CN111477756A (en) * | 2020-04-27 | 2020-07-31 | 深圳扑浪创新科技有限公司 | Light-emitting device and manufacturing method thereof |
| CN111564570B (en) * | 2020-05-22 | 2023-04-11 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN112086488B (en) * | 2020-09-07 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005258160A (en) * | 2004-03-12 | 2005-09-22 | Toppoly Optoelectronics Corp | Driving element structure for organic light emitting diode display and method for manufacturing the same |
| WO2014206035A1 (en) * | 2013-06-28 | 2014-12-31 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, display panel and display device |
| CN107768412A (en) * | 2017-10-26 | 2018-03-06 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof and display panel |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100484591B1 (en) * | 2001-12-29 | 2005-04-20 | 엘지.필립스 엘시디 주식회사 | an active matrix organic electroluminescence display and a manufacturing method of the same |
| JP4401657B2 (en) * | 2003-01-10 | 2010-01-20 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| US20060012742A1 (en) * | 2004-07-16 | 2006-01-19 | Yaw-Ming Tsai | Driving device for active matrix organic light emitting diode display and manufacturing method thereof |
| KR100964229B1 (en) * | 2008-08-19 | 2010-06-17 | 삼성모바일디스플레이주식회사 | Organic light emitting display apparatus and method of manufacturing thereof |
| US8237163B2 (en) * | 2008-12-18 | 2012-08-07 | Lg Display Co., Ltd. | Array substrate for display device and method for fabricating the same |
| KR101015850B1 (en) * | 2009-02-09 | 2011-02-24 | 삼성모바일디스플레이주식회사 | Method for manufacturing organic light emitting diode display |
| KR101074803B1 (en) * | 2009-11-24 | 2011-10-19 | 삼성모바일디스플레이주식회사 | Organic light emitting display apparatus and method of manufacturing thereof |
| KR101074809B1 (en) * | 2009-12-22 | 2011-10-19 | 삼성모바일디스플레이주식회사 | Organic light emitting display apparatus |
| KR101234228B1 (en) * | 2010-06-04 | 2013-02-18 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
| CN102629577B (en) * | 2011-09-29 | 2013-11-13 | 京东方科技集团股份有限公司 | TFT array substrate and manufacturing method thereof and display device |
| CN202423298U (en) * | 2011-12-31 | 2012-09-05 | 京东方科技集团股份有限公司 | TFT (Thin Film Transistor), array substrate and display device |
| CN203054410U (en) * | 2013-01-28 | 2013-07-10 | 合肥京东方光电科技有限公司 | Array substrate and displaying device |
| KR20150069834A (en) * | 2013-12-16 | 2015-06-24 | 삼성디스플레이 주식회사 | Organic light emitting display device |
| CN104022076B (en) * | 2014-05-27 | 2017-01-25 | 京东方科技集团股份有限公司 | Array substrate, preparing method thereof and display device |
| KR102357389B1 (en) * | 2014-09-15 | 2022-02-03 | 삼성디스플레이 주식회사 | Thin film transistor substrate and display apparatus |
| CN104576705B (en) * | 2015-01-27 | 2018-03-30 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method, display device |
| CN104932127B (en) * | 2015-07-09 | 2018-07-06 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display device |
| KR102455088B1 (en) * | 2016-01-11 | 2022-10-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Tft substrate, display panel and display device having the same |
| KR20170119801A (en) * | 2016-04-19 | 2017-10-30 | 삼성디스플레이 주식회사 | Organic light emitting display device and method of manufacturing organic light emitting display device |
| CN106941113B (en) * | 2017-05-15 | 2020-04-21 | 京东方科技集团股份有限公司 | OLED display panel, preparation method thereof and display device |
| CN109326624B (en) * | 2017-08-01 | 2021-12-24 | 京东方科技集团股份有限公司 | Pixel circuit, manufacturing method thereof and display device |
| CN107785405B (en) * | 2017-10-31 | 2020-04-17 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof |
| CN107968113B (en) * | 2017-12-15 | 2021-01-08 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof |
| CN108598145B (en) * | 2018-06-29 | 2021-08-31 | 上海天马微电子有限公司 | Organic light-emitting display panel and organic light-emitting display device |
| CN109244080A (en) * | 2018-07-19 | 2019-01-18 | 深圳市华星光电技术有限公司 | Double-sided OLED display and preparation method thereof |
| CN109037239B (en) * | 2018-07-26 | 2020-11-17 | 上海天马微电子有限公司 | Array substrate, preparation method thereof and display panel |
| CN109300912B (en) * | 2018-09-17 | 2021-01-22 | 京东方科技集团股份有限公司 | Display substrate based on electroluminescent device, preparation method of display substrate and display device |
-
2019
- 2019-07-31 CN CN201910703213.3A patent/CN110391283B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005258160A (en) * | 2004-03-12 | 2005-09-22 | Toppoly Optoelectronics Corp | Driving element structure for organic light emitting diode display and method for manufacturing the same |
| WO2014206035A1 (en) * | 2013-06-28 | 2014-12-31 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, display panel and display device |
| CN107768412A (en) * | 2017-10-26 | 2018-03-06 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof and display panel |
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|---|---|
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