CN104183630A - A substrate with magnetic nanowires being arranged on the surface and a preparation method of the substrate - Google Patents
A substrate with magnetic nanowires being arranged on the surface and a preparation method of the substrate Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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Abstract
The invention relates to a substrate with magnetic nanowires being arranged on the surface and a preparation method of the substrate. The surface of the substrate is provided with the orderly-arranged magnetic nanowires. The preparation method of the substrate comprises the steps of dispersing the magnetic nanowires into a dispersing solution, and then, using a magnetic field to enable the magnetic nanowires to be orderly-arranged and deposited on the surface of the substrate. By utilizing the magnetic properties of the magnetic nanowire material itself and under the action of a magnetic field, directional arrangement can be realized, and large-area, multiple-angle, multiple-mode, multiple-layer controllable nano material arrangement can be realized; the operation is simple; and the large-area preparation and arrangement of the materials help to promote the development of large-scale and integrated production of semiconductor devices.
Description
Technical Field
The invention relates to a substrate with magnetic nanowires arranged on the surface and a preparation method thereof, belonging to the technical field of semiconductor material preparation.
Background
In the prior art, the preparation methods of the nano materials (i.e. the methods for growing and arranging the nano wires) mostly adopt chemical methods, mainly including sol-gel methods, hydrothermal and solvothermal synthesis methods, chemical precipitation methods, template methods and the like. However, the raw materials of the sol-gel method are expensive, and the sintering property among gel particles is poor; nanowires prepared by hydrothermal and chemical precipitation methods are dispersed in a solution, and cannot form an ordered array; the template method is simple in equipment, easy to operate, capable of being carried out at normal temperature and normal pressure, low in production cost and easy to realize industrial production, particularly, an Anodic Aluminum Oxide (AAO) template method is used, the pore diameter is controllable and consistent in size, the columnar pores are perpendicular to the membrane surface, pores are independent, holes are in ordered columnar arrangement, synthesized materials are easy to collect, although the template method can realize nanowire arrangement perpendicular to the membrane surface, the ordered nanowires cannot exist independently, and after the template is washed away, the prepared ordered nanowires become disordered in distribution, so that further application of the template method for preparing the nanomaterials is limited.
Moreover, the method can not realize the arrangement of the nanowires in a large area, can not realize the compound arrangement of the nanowires in multiple modes and multiple layers, and is not suitable for the development requirements of large-scale and integrated production of semiconductor devices.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention is directed to a substrate with magnetic nanowires arranged on the surface thereof, and a method for preparing the same.
The invention also aims to provide a preparation method of the substrate with the magnetic nanowires arranged on the surface.
To achieve the above objects, the present invention provides a substrate having magnetic nanowires aligned on a surface thereof, wherein the magnetic nanowires are aligned on the surface of the substrate.
According to the embodiments of the present invention, the magnetic nanowires on the surface of the substrate may have the following different arrangements:
the whole surface of the substrate is provided with a layer of magnetic nanowires which are orderly arranged in the same direction and can be called one-dimensional arrangement; or,
the surface of the substrate is provided with more than two layers of magnetic nanowires, the magnetic nanowires of each layer are orderly arranged in the same direction, and the magnetic nanowires of different layers are arranged in different directions, which can be called multi-angle layered arrangement; or,
the surface of the substrate is provided with magnetic nanowires which are orderly arranged in a block array, the magnetic nanowires can be called as block array arrangement, all the magnetic nanowires in the same layer in the same block are arranged in the same direction, one layer or a plurality of layers of magnetic nanowires with multiple angles can be arranged in the same block, different blocks are separated by blank areas, the arrangement directions of the magnetic nanowires in different blocks can be different, and the types of the arranged nanowires can also be different.
According to a specific embodiment of the present invention, preferably, the magnetic nanowires are Ni-based nanowires, more preferably, the Ni-based nanowires include Ni nanowires, Ni/(metal or metal oxide)/Ni composite nanowires, or NiO nanowires; wherein the metal comprises one or two of materials such as Ni, Au, Cu and the like, and the metal oxide comprises NiO, ZnO and TiO2And the metal or the metal oxide also comprises other similar materials and is not limited to the listed materials.
The Ni/(metal or metal oxide)/Ni composite nanowire is a nanowire divided into three sections, the middle section is metal or metal oxide, the two ends are Ni nanowires, and the invention utilizes the magnetism of Ni caps (Ni nanowires) at the two ends to arrange the nanowires; the NiO nanowire is a whole NiO nanowire and is formed by oxidizing the arranged Ni nanowires.
According to a specific embodiment of the present invention, it is preferable that the distribution density of the magnetic nanowires in each layer in the direction perpendicular to the nanowires is 1 to 5 magnetic nanowires/μm.
According to the embodiment of the present invention, the substrate used may be a substrate commonly used in the art, such as a silicon wafer, a plexiglass wafer, etc., and the silicon wafer may be coated with SiO2A single polishing wafer of thin film, but not limited thereto.
The invention also provides a preparation method of the substrate with the magnetic nanowires arranged on the surface, which comprises the steps of dispersing the magnetic nanowires in a dispersion solution, forming ordered arrangement of the magnetic nanowires by adopting a magnetic field, and depositing the ordered arrangement on the surface of the substrate. Different preparation steps can be adopted according to different arrangement modes required.
According to a particular embodiment of the present invention, preferably, the above method comprises the steps of:
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, and cleaning the surface of the substrate to obtain the substrate with a layer of magnetic nanowires orderly arranged in the same direction on the whole surface;
or,
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, cleaning the surface of the substrate to obtain the substrate with a layer of magnetic nanowires orderly arranged in the same direction on the whole surface, then putting the substrate into the ethanol solution dispersed with the magnetic nanowires again, then putting the ethanol solution into uniform magnetic fields in different magnetic field directions, repeatedly heating and standing or standing at room temperature (so that the deposited magnetic nanowires of the next layer and the magnetic nanowires of the previous layer have different directions), volatilizing the ethanol solution, and cleaning the surface of the substrate until the substrate with more than two layers of magnetic nanowires on the surface is obtained;
or,
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, cleaning the surface of the substrate to obtain the substrate with a layer of magnetic nanowires orderly arranged in the same direction on the whole surface, then coating photoresist on the surface of the substrate, and exposing the photoresist part on the surface of the substrate by using a mask technology to partition the photoresist on the surface of the substrate and expose partial nanowires on the surface of the substrate; ultrasonically cleaning the exposed nanowire; cleaning and removing the photoresist on the rest part of the surface of the substrate to obtain the substrate with the magnetic nanowires which are orderly arranged in the block array on the surface;
or,
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, cleaning the surface of the substrate, coating photoresist on the whole surface of the substrate, exposing a part of the photoresist on the surface of the substrate by using a mask technology, exposing a part of the area of the substrate, exposing the nanowire in the area, and cleaning the exposed nanowire by ultrasonic treatment;
putting the cleaned substrate into the ethanol solution dispersed with the same or different types of magnetic nanowires again, and then putting the ethanol solution into uniform magnetic fields in different magnetic field directions for repeated heating and standing or room temperature placement;
after the ethanol solution is volatilized to be dry, taking out the substrate, and cleaning the surface of the substrate; and putting the substrate into an acetone solution to remove the residual photoresist on the unexposed part of the surface of the substrate to obtain the substrate with the surface provided with the block array, the same or different types of magnetic nanowires and the nanowires in different arrangement directions.
The substrate with the surface provided with the block array, the same or different types of magnetic nanowires and the nanowires with different arrangement directions refers to that: the nanowires on the surface of the substrate are arranged in blocks, the nanowires in different blocks can be nanowires of the same material or nanowires of different materials, and the nanowires in different blocks can be arranged in the same direction or different directions and can be arranged at a certain angle.
According to a specific embodiment of the present invention, preferably, the above preparation method further comprises the steps of:
attaching and growing in a template to obtain a magnetic nanowire;
placing the template attached with the grown magnetic nanowires into NaOH solution for soaking and dissolving, and releasing to obtain the magnetic nanowires, wherein preferably, the concentration of the NaOH solution is 1-5 mol/L, and the soaking and dissolving time is 5-20 min;
the magnetic nanowires are attracted by a magnet and cleaned.
In the above preparation method, more preferably, the concentration of the NaOH solution dissolving and releasing the magnetic nanowires is 3mol/L, and the time for soaking and dissolving is 10 min.
In the preparation method, the adopted magnetic nanowires can be prepared by a conventional method, and preferably the magnetic nanowires are grown in an anodic alumina template plated with a metal film on the back by adopting electrochemical deposition, sol-gel or electrophoretic deposition; more preferably, the pores of the anodized aluminum template used have a pore diameter of 200nm and a length of 50 μm. The magnetic nanowire with the diameter of 200nm and the length of 5-50 μm can be prepared by adopting the template with the pores with the pore diameter and the depth.
The back surface of the anodic aluminum oxide template is plated with a metal film serving as an electrode, and the metal film can be a metal film of gold, silver, copper and the like.
According to a specific embodiment of the present invention, preferably, when the magnetic nanowires are prepared by electrochemical deposition, it may comprise the steps of:
to contain NiSO4·6H2O and H3BO3Adding dilute sulfuric acid to the reaction solution of (1) in which NiSO is added to adjust the pH to 34·6H2O and H3BO3The molar concentration of the compound is 0.1mol/L-1 mol/L;
the template was placed in the reaction solution at 4mA/cm2-10mA/cm2The reaction was carried out for 2min with a constant current, followed by halving the current density at 2mA/cm2-5mA/cm2The constant current is used for 30min-3h reaction to obtain the magnetic nanowire (Ni nanowire is obtained here).
More preferably, when the magnetic nanowires are prepared by electrochemical deposition, according to a specific embodiment of the present invention, it may comprise the steps of:
to contain NiSO4·6H2O and H3BO3Adding dilute sulfuric acid to the reaction solution of (1) in which NiSO is added to adjust the pH to 34·6H2O and H3BO3The solution is 0.4mol/L and 0.6mol/L respectively;
the template was placed in the reaction solution at 6mA/cm2Was reacted for 2min at a constant current of 3mA/cm2The constant current is used for 30min-3h reaction to obtain the magnetic nanowire (Ni nanowire is obtained here).
If the Ni/metal/Ni nanowire or the Ni/metal oxide/Ni nanowire needs to be prepared in the electrochemical deposition method, the Ni nanowire needs to be electroplated, after the Ni nanowire part is electroplated, the electrolyte is changed into a corresponding metal ion solution, the metal ion nanowire is deposited by the electrochemical deposition method, and finally the electrolyte is changed to electroplate the Ni nanowire; or after the Ni nanowire part is electroplated, the electrolyte is changed into a charged particle solution corresponding to the metal oxide, the metal oxide nanowire is deposited by an electrophoretic deposition method, and finally the electrolyte is changed to electroplate the Ni nanowire; the Ni nanowires at two ends are used for sealing caps to realize the control of an external magnetic field. If the NiO nanowire needs to be prepared, the Ni nanowire is oxidized into the NiO nanowire at high temperature after the Ni nanowire is prepared.
According to a specific embodiment of the present invention, preferably, in the above electrochemical deposition, a step of immersing the template with the magnetic nanowires attached thereto in aqua regia to remove the metal film may be further included, before dissolving the template in the NaOH solution, wherein the immersion time is 5min to 10 min.
In the above preparation method, the step of dispersing the magnetic nanowires in a dispersion solution (e.g., an ethanol solution) may be performed by ultrasonic dispersion, the ultrasonic dispersion time is preferably 1 minute, and the magnetic nanowires may be washed with deionized water and ethanol two to three times, respectively.
In the above production method, the temperature at the time of heating and standing in a magnetic field is preferably controlled to be lower than the boiling temperature of ethanol.
The technical scheme provided by the invention realizes directional arrangement by utilizing the self magnetism of the nanowire material under the action of a magnetic field, can realize controllable nano material arrangement with large area, various angles, various modes and various layers, and is simple to operate. The magnetic nano material on the substrate provided by the invention is mainly a one-dimensional magnetic nano material related to Ni, and the preparation and arrangement of Ni related materials, such as Ni/(metal or metal oxide)/Ni composite nanowire, NiO nanowire and the like, can be realized by utilizing the strong magnetism of the Ni material, and the large-area preparation and the realization of ordered arrangement of multiple modes and multiple layers of the materials can greatly promote the development of large-scale and integrated production of semiconductor devices.
Drawings
FIG. 1 is an SEM photograph of large-area arrangement of Ni-based nanowires on a Si substrate in example 1;
FIG. 2a is an SEM photograph of multi-angle multi-layered arrangement of Ni-based nanowires on a Si substrate of example 5;
FIG. 2b is an enlarged view of a portion of FIG. 2 a;
FIG. 3 is a schematic view of large-area arrangement of Ni-based nanowires on Si substrates of examples 1, 2, 3, 4;
FIG. 4 is a schematic view of multi-angle multi-layer arrangement of Ni-based nanowires on a Si substrate according to example 5;
FIG. 5 is a schematic view of a block arrangement of Ni-based nanowires on a Si substrate of example 6;
FIG. 6 is a schematic view showing different kinds of Ni and nanowires arranged right and left on a Si substrate in example 7.
Detailed Description
The method of the present invention is described below with reference to specific examples to make it easier to understand and understand the technical solution of the present invention, but the present invention is not limited thereto. The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials are commercially available, unless otherwise specified.
Example 1
This embodiment provides a substrate with nanowires arranged on the surface, which is a Si substrate (coated with SiO) with large-area orderly arranged Ni nanowires on the surface2Layer), the preparation method comprising the steps of:
directly growing Ni nanowires in an anodic alumina template by an electrochemical deposition method: before electroplating, plating a layer of gold film on the back of the template as an electrode;
to the reaction solution (containing NiSO with a concentration of 0.4mol/L4·6H2O and 0.6mol/L of H3BO3) Adding dilute sulfuric acid solution, and adjusting the pH value to 3;
the template was placed in the reaction solution at 6mA/cm2Was reacted for 2min at a constant current of 3mA/cm2Carrying out reaction for 3h at constant current to obtain a nanowire with the length of 50 microns;
placing the template with the attached nanowire material in the prepared aqua regia, soaking for 5-10min, and dissolving the gold film on the back of the template;
putting the template with the gold film dissolved in the template into NaOH solution with the concentration of 3mol/L to dissolve and release the Ni nanowires, and cleaning the nanowires by using deionized water and ethanol solution;
soaking the cleaned Ni nanowires in an ethanol solution (analytically pure, absolute ethanol), ultrasonically dispersing for 1min, putting the Si substrate into the ethanol solution in which the Ni nanowires are dispersed, and applying a uniform magnetic field to two sides of a beaker containing the solution;
standing the arranging device with the magnetic field, taking out the substrate after the ethanol solution is volatilized, cleaning the surface with deionized water and ethanol to obtain the Si substrate with the Ni nanowires orderly arranged in large area on the surface, wherein an SEM picture is shown in figure 1, an arrangement schematic diagram is shown in figure 3, and the Ni nanowires are orderly arranged in a single direction, a single layer and a large area on the obtained Si substrate.
Example 2
This example provides a substrate with nanowires arranged on the surface and a method for preparing the same, wherein the substrate is a Si substrate (coated with SiO) with large-area orderly-arranged NiO nanowires on the surface2Layer), the preparation method comprising the steps of:
directly growing Ni nanowires in an anodic alumina template by an electrochemical deposition method: before electroplating, plating a layer of gold film on the back of the template as an electrode;
to the reaction solution (containing NiSO with a concentration of 0.4mol/L4·6H2O and 0.6mol/L of H3BO3) Adding dilute sulfuric acid solution, and adjusting the pH value to 3;
the template was placed in the reaction solution at 6mA/cm2The reaction was carried out for 2min at a constant flow of (3 mA/cm)2Carrying out reaction for 3h at constant current to obtain a nanowire with the length of 50 microns;
placing the template with the attached nanowire material in the prepared aqua regia, soaking for 5-10min, and dissolving the gold film on the back of the template;
putting the template with the gold film dissolved in the template into NaOH solution with the concentration of 3mol/L to dissolve and release the Ni nanowires, and cleaning the nanowires by using deionized water and ethanol solution;
soaking the cleaned Ni nanowires in an ethanol solution, ultrasonically dispersing for 1min, putting the Si substrate into the ethanol solution in which the Ni nanowires are dispersed, and applying a uniform magnetic field to two sides of a beaker containing the solution;
standing the arranging device with the magnetic field, taking out the substrate after the ethanol solution is volatilized, and cleaning the surface with deionized water and ethanol to obtain the substrate with the large-area parallel Ni nanowires on the surface;
the Ni nanowires of the substrate with the large-area parallel Ni nanowires on the surface are oxidized into NiO nanowires at high temperature, and the optimization conditions for oxidizing the Ni nanowires at high temperature are as follows: and (3) maintaining oxygen atmosphere in the tubular furnace for high-temperature oxidation, maintaining the temperature of 400-800 ℃ as required, and oxidizing for 2-8h to obtain the Si substrate with the NiO nanowires arranged in large area on the surface, wherein the schematic arrangement diagram is shown in FIG. 3 and is arranged orderly in a single direction and in large area.
Example 3
This embodiment provides a substrate with nanowires arranged on the surface, which is a Si substrate (coated with SiO) with large-area orderly arranged Ni/metal/Ni composite nanowires on the surface2Layer), the preparation method comprising the steps of:
directly growing Ni nanowires in an anodic alumina template by an electrochemical deposition method: before electroplating, plating a layer of gold film on the back of the template as an electrode;
to the reaction solution (containing NiSO with a concentration of 0.4mol/L4·6H2O and H with a concentration of 0.6mol/L3BO3) Adding dilute sulfuric acid solution, and adjusting the pH value to 3;
the template was placed in the reaction solution at 3mA/cm2The constant current is used for 1h reaction to obtain the Ni nanowire with the length of 5 mu m;
changing the electrolyte to a Cu ion solution (CuSO)4Dilute sulfuric acid solution) and adjusting the pH value to 3 by using dilute sulfuric acid, obtaining a Cu nanowire by an electrochemical deposition method, replacing the electrolyte with the electrolyte for preparing the Ni nanowire again, and depositing the Ni nanowire by the electrochemical deposition method to form a 50 mu m Ni/Cu/Ni three-section nanowire;
placing the template with the attached nanowire material in the prepared aqua regia, soaking for 5-10min, and dissolving the gold film on the back of the template;
putting the template with the gold film dissolved in the template into NaOH solution with the concentration of 3mol/L to dissolve and release Ni/Cu/Ni nanowires, and cleaning the nanowires by using deionized water and ethanol solution;
soaking the cleaned Ni/Cu/Ni nanowires in an ethanol solution, ultrasonically dispersing for 1min, putting the Si substrate into the ethanol solution in which the Ni/Cu/Ni nanowires are dispersed, and applying a uniform magnetic field to two sides of a beaker containing the solution;
standing the arranging device with the magnetic field, taking out the substrate after the ethanol solution is volatilized, and cleaning the surface with deionized water and ethanol to obtain the Si substrate with the Ni/metal/Ni composite nanowires orderly arranged in a large area on the surface, wherein the schematic arrangement diagram is shown in figure 3 and is in single-direction and large-area orderly arrangement.
Example 4
This embodiment provides a substrate with nanowires arranged on the surface, which is a Si substrate (coated with SiO) with large-area orderly arranged Ni/metal oxide/Ni composite nanowires on the surface2Layer), the preparation method comprising the steps of:
directly growing Ni nanowires in an anodic alumina template by an electrochemical deposition method: before electroplating, plating a layer of gold film on the back of the template as an electrode;
to the reaction solution (containing NiSO with a concentration of 0.4mol/L4·6H2O and H with a concentration of 0.6mol/L3BO3) Adding dilute sulfuric acid solution, and adjusting the pH value to 3;
the template was placed in the reaction solution at 6mA/cm2The reaction was carried out for 2min with a constant current of 3mA/cm2Carrying out reaction for 1h at constant current to obtain nickel nanowires with the length of 5 microns;
changing the electrolyte to TiO2Sol, electrophoretic deposition to obtain TiO2Replacing the electrolyte with the electrolyte for preparing the Ni nanowire, and depositing the Ni nanowire by an electrochemical deposition method to form Ni/TiO nanowire with the thickness of 50 mu m2a/Ni three-section nanowire;
placing the template with the attached nanowire material in the prepared aqua regia, soaking for 5-10min, and dissolving the gold film on the back of the template;
putting the template dissolved with the gold film removed into NaOH solution with the concentration of 3mol/L to dissolve and release Ni/TiO2the/Ni nanowire is cleaned by deionized water and ethanol solution;
cleaning the Ni/TiO2Soaking Ni nanowire in ethanol solution, ultrasonically dispersing for 1min, and placing Si substrate in the solution with Ni/TiO dispersed therein2Adding a uniform magnetic field on two sides of a beaker containing the solution in the ethanol solution of the/Ni nanowires;
standing the arranging device with the magnetic field, taking out the substrate after the ethanol solution is volatilized, and cleaning the surface with deionized water and ethanol to obtain the Si substrate with the Ni/metal oxide/Ni composite nanowires orderly arranged in a large area on the surface, wherein the schematic arrangement diagram is shown in figure 3 and is in single-direction and large-area orderly arrangement.
Example 5
This embodiment provides a substrate with nanowires arranged on the surface and a method for preparing the same, wherein the substrate is a Si substrate (coated with SiO) with Ni nanowires arranged in a multi-angle layered ordered manner on the surface2Layer) comprising the steps of：
Directly growing Ni nanowires in an anodic alumina template by an electrochemical deposition method: before electroplating, plating a layer of gold film on the back of the template as an electrode;
to the reaction solution (containing NiSO with a concentration of 0.4mol/L4·6H2O and 0.6mol/L of H3BO3) Adding dilute sulfuric acid solution, and adjusting the pH value to 3;
the template was placed in the reaction solution at 6mA/cm2Was reacted for 2min at a constant current of 3mA/cm2Carrying out reaction for 3h at constant current to obtain a nanowire with the length of 50 microns;
placing the template with the attached nanowire material in the prepared aqua regia, soaking for 5-10min, and dissolving the gold film on the back of the template;
putting the template with the gold film dissolved in the template into NaOH solution with the concentration of 3mol/L to dissolve and release the Ni nanowires, and cleaning the nanowires by using deionized water and ethanol solution;
soaking the cleaned Ni nanowires in an ethanol solution, ultrasonically dispersing for 1min, putting the Si substrate into the ethanol solution in which the Ni nanowires are dispersed, and applying a uniform magnetic field to two sides of a beaker containing the solution;
standing the arranging device with the magnetic field, taking out the substrate after the ethanol solution is volatilized, and cleaning the surface with deionized water and ethanol to obtain the substrate with large-area Ni nanowires arranged in parallel on the surface;
putting the substrate with the arranged nanowires into the ethanol solution in which the nanowires are soaked again, and applying uniform magnetic fields to two sides of the beaker containing the solution, wherein the magnetic field applied at this time forms a certain angle with the magnetic field applied at the first time, and the angle is 90 degrees in the embodiment;
standing the arranging device with the magnetic field, taking out the substrate after the ethanol solution is volatilized, washing the surface with deionized water and ethanol, and performing the operation to obtain the Si substrate with the Ni nanowires orderly arranged in a multi-angle layered manner on the surface, wherein SEM pictures are shown in figures 2a and 2b, and the arrangement schematic diagram is shown in figure 4, and the Si substrate is in double-layer, vertical and large-area orderly arrangement.
Example 6
This embodiment provides a substrate with nanowires arranged on the surface, which is a Si substrate (coated with SiO) with Ni nanowires arranged in blocks on the surface, and a method for preparing the same2Layer) comprising the steps of:
directly growing Ni nanowires in an anodic alumina template by an electrochemical deposition method: before electroplating, plating a layer of gold film on the back of the template as an electrode;
to the reaction solution (containing NiSO with a concentration of 0.4mol/L4·6H2O and 0.6mol/L of H3BO3) Adding dilute sulfuric acid solution, and adjusting the pH value to 3;
the template was placed in the reaction solution at 6mA/cm2Was reacted for 2min at a constant current of 3mA/cm2Carrying out reaction for 3h at constant current to obtain a nanowire with the length of 50 microns;
placing the template with the attached nanowire material in the prepared aqua regia, soaking for 5-10min, and dissolving the gold film on the back of the template;
putting the template with the gold film dissolved in the template into NaOH solution with the concentration of 3mol/L to dissolve and release the Ni nanowires, and cleaning the nanowires by using deionized water and ethanol solution;
soaking the cleaned Ni nanowires in an ethanol solution, ultrasonically dispersing for 1min, putting the Si substrate into the ethanol solution in which the Ni nanowires are dispersed, and applying a uniform magnetic field to two sides of a beaker containing the solution;
standing the arranging device with the magnetic field, taking out the substrate after the ethanol solution is volatilized, and cleaning the surface with deionized water and ethanol to obtain large-area Ni nanowires arranged on the surface of the substrate in parallel;
dividing a large-area Ni nanowire arranged on a substrate into a plurality of Ni nanowires by using a photoresist technology to form a block arrangement array of the Ni nanowires, and specifically comprising the following steps: 1) coating photoresist on the surface of the substrate on which the large-area Ni nanowires are arranged; 2) exposing the photoresist part on the surface of the substrate by utilizing a photoresist and a mask technology to block the photoresist on the surface of the substrate, thereby exposing the nano wires on the surface of part of the substrate; 3) cleaning the exposed nanowires by an ultrasonic method; 4) cleaning the photoresist on the rest part of the surface of the substrate by using an acetone solution;
the substrate is put into deionized water and ethanol solution for cleaning, and the Si substrate with the Ni nanowires arranged on the surface in blocks is obtained, and the arrangement schematic diagram is shown in FIG. 5.
Example 7
This embodiment provides a substrate with nanowires arranged on the surface and a method for preparing the same, wherein the substrate is a Si substrate (coated with SiO) with nanowires of different types arranged on the left and right parts of the surface2Layer), such as Ni nanowires arranged on the left side, Ni/Cu/Ni nanowires arranged on the right side, and the arrangement directions of the left nanowire and the right nanowire are vertical.
Dissolving the Ni nanowires prepared in the embodiment 1 in an ethanol solution, adding a magnetic field to arrange the Ni nanowires on a substrate, taking out the substrate after the solution is volatilized to be dry, and cleaning the substrate;
coating photoresist on the surface of the substrate, exposing the photoresist part on the surface of the substrate by using a mask plate, exposing the right half part of the substrate, exposing the Ni nanowire on the right half part, and cleaning the exposed nanowire by ultrasonic treatment;
dissolving the Ni/Cu/Ni composite nanowires prepared in the embodiment 2 in an ethanol solution, adding a magnetic field vertical to the direction of arranging the Ni nanowires, arranging the Ni/Cu/Ni composite nanowires on the substrate with the left half part covered by the photoresist, taking out the substrate after the solution is volatilized to be dry, and cleaning;
and (3) putting the substrate into an acetone solution to remove the residual photoresist on the left half part of the surface of the substrate, thus obtaining the substrate with the Ni nanowire on the left side and the Ni/Cu/Ni nanowire on the right side, wherein the left nanowire and the right nanowire are arranged vertically, and the arrangement schematic diagram is shown in figure 6.
Claims (10)
1. A substrate having magnetic nanowires aligned on a surface thereof, wherein the magnetic nanowires are aligned on the surface of the substrate.
2. The substrate according to claim 1, wherein the entire surface of the substrate has a layer of magnetic nanowires orderly arranged in the same direction; or,
the surface of the substrate is provided with two or more layers of magnetic nanowires, the magnetic nanowires of each layer are orderly arranged in the same direction, and the magnetic nanowires of different layers are arranged in different directions; or,
the surface of the substrate is provided with magnetic nanowires which are orderly arranged in a block array.
3. The substrate of claim 1, wherein the magnetic nanowires are Ni-based nanowires, preferably the Ni-based nanowires comprise Ni nanowires, Ni/(metal or metal oxide)/Ni composite nanowires, or NiO nanowires; wherein the metal comprises one or two of Ni, Au and Cu, and the metal oxide comprises NiO, ZnO and TiO2And the like, without being limited to the listed materials.
4. The substrate of claim 2, wherein the magnetic nanowires in each layer have a distribution density of 1-5 magnetic nanowires per μm in a direction perpendicular to the nanowires.
5. A method for preparing a substrate having magnetic nanowires aligned on the surface thereof according to any one of claims 1 to 4, comprising the steps of dispersing the magnetic nanowires in a dispersion solution, and then forming the magnetic nanowires into an ordered arrangement using a magnetic field and depositing the magnetic nanowires on the surface of the substrate.
6. The method of claim 5, wherein the method comprises the steps of:
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, and cleaning the surface of the substrate to obtain the substrate with a layer of magnetic nanowires orderly arranged in the same direction on the whole surface;
or,
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, cleaning the surface of the substrate to obtain the substrate with a layer of magnetic nanowires orderly arranged in the same direction on the whole surface, then putting the substrate into the ethanol solution dispersed with the magnetic nanowires again, then putting the ethanol solution into uniform magnetic fields in different magnetic field directions, and repeating the steps of heating and standing or standing at room temperature, volatilizing the ethanol solution and cleaning the surface of the substrate until the substrate with more than two layers of magnetic nanowires on the surface is obtained;
or,
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, cleaning the surface of the substrate to obtain the substrate with a layer of magnetic nanowires orderly arranged in the same direction on the whole surface, then coating photoresist on the surface of the substrate, and exposing the photoresist part on the surface of the substrate by using a mask technology to partition the photoresist on the surface of the substrate and expose partial nanowires on the surface of the substrate; ultrasonically cleaning the exposed nanowire; cleaning and removing the photoresist on the rest part of the surface of the substrate to obtain the substrate with the magnetic nanowires which are orderly arranged in the block array on the surface;
or,
dispersing the magnetic nanowires in an ethanol solution, putting the substrate into the ethanol solution in which the magnetic nanowires are dispersed, and then putting the ethanol solution in a uniform magnetic field for heating and standing or standing at room temperature;
after the ethanol solution is volatilized, taking out the substrate, cleaning the surface of the substrate, coating photoresist on the whole surface of the substrate, exposing a part of the photoresist on the surface of the substrate by using a mask technology, exposing a part of the area of the substrate, exposing the nanowire in the area, and cleaning the exposed nanowire by ultrasonic treatment;
putting the cleaned substrate into the ethanol solution dispersed with the same or different types of magnetic nanowires again, and then putting the ethanol solution into uniform magnetic fields in different magnetic field directions for repeated heating and standing or room temperature placement;
after the ethanol solution is volatilized to be dry, taking out the substrate, and cleaning the surface of the substrate; and putting the substrate into an acetone solution to remove the residual photoresist on the unexposed part of the surface of the substrate to obtain the substrate with the surface provided with the block array, the same or different types of magnetic nanowires and the nanowires in different arrangement directions.
7. The production method according to claim 5 or 6, wherein the production method further comprises the steps of:
attaching and growing in a template to obtain a magnetic nanowire;
placing the template attached with the grown magnetic nanowires into NaOH solution for soaking and dissolving, and releasing to obtain the magnetic nanowires, wherein preferably, the concentration of the NaOH solution is 1-5 mol/L, and the soaking and dissolving time is 5-20 min;
the magnetic nanowires are attracted by a magnet and cleaned.
8. The preparation method according to any one of claims 5 to 7, wherein the magnetic nanowires are magnetic nanowires grown in an anodized aluminum template plated with a metal film on the back side by electrochemical deposition, sol-gel or electrophoretic deposition; preferably, the pores on the anodized aluminum template have a pore diameter of 200nm and a length of 50 μm.
9. The method of manufacturing of claim 8, wherein the electrochemical deposition comprises the steps of:
to contain NiSO4·6H2O and H3BO3Adding dilute sulfuric acid to the reaction solution of (1) in which NiSO is added to adjust the pH to 34·6H2O and H3BO3The molar concentration of the compound is 0.1mol/L-1 mol/L;
the template was placed in the reaction solution at 4mA/cm2-10mA/cm2OfThe reaction was carried out for 2min with flowing current, followed by halving the current density at 2mA/cm2-5mA/cm2The constant current is used for reaction for 30min-3h to obtain the magnetic nanowire.
10. The method for preparing a magnetic nanowire array as claimed in claim 7, wherein the method further comprises the step of removing the metal film by immersing the template on which the magnetic nanowire is grown in aqua regia for 5min to 10min before dissolving the template in the NaOH solution.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104575658A (en) * | 2014-12-24 | 2015-04-29 | 中山大学 | Magnetic field and application of magnetic nanowires in transparent conductive film as well as transparent conductive film and preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
| US20100101829A1 (en) * | 2008-10-24 | 2010-04-29 | Steven Verhaverbeke | Magnetic nanowires for tco replacement |
-
2014
- 2014-05-29 CN CN201410235930.5A patent/CN104183630A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
| US20100101829A1 (en) * | 2008-10-24 | 2010-04-29 | Steven Verhaverbeke | Magnetic nanowires for tco replacement |
Non-Patent Citations (4)
| Title |
|---|
| CARLOS M HANGARTER ET AL: "Hierarchical magnetic assembly of nanowires", 《NANOTECHNOLOGY》 * |
| DONGMOK WHANG ET AL: "Large-Scale Hierarchical Organization of Nanowire Arrays for Integrated Nanosystems", 《NANO LETTERS》 * |
| 刘伟星等: "氧化镍纳米线的制备及光电性能研究", 《电镜与涂饰》 * |
| 潘亚武等: "一维纳米材料排列方法的研究进展", 《微纳电子技术》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104575658A (en) * | 2014-12-24 | 2015-04-29 | 中山大学 | Magnetic field and application of magnetic nanowires in transparent conductive film as well as transparent conductive film and preparation method |
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