CN103367565A - Light-Emitting Diode (LED) packaging method - Google Patents

Light-Emitting Diode (LED) packaging method Download PDF

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Publication number
CN103367565A
CN103367565A CN2012100988924A CN201210098892A CN103367565A CN 103367565 A CN103367565 A CN 103367565A CN 2012100988924 A CN2012100988924 A CN 2012100988924A CN 201210098892 A CN201210098892 A CN 201210098892A CN 103367565 A CN103367565 A CN 103367565A
Authority
CN
China
Prior art keywords
electrode
light
reflector
emitting component
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012100988924A
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Chinese (zh)
Inventor
林新强
陈滨全
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN2012100988924A priority Critical patent/CN103367565A/en
Priority to TW101114402A priority patent/TW201342673A/en
Publication of CN103367565A publication Critical patent/CN103367565A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Led Device Packages (AREA)

Abstract

An LED packaging method comprises the steps that a pin structure and a reflector cup are formed on a provided substrate, the pin structure comprises a first electrode and a second electrode separated from the first electrode, and a recess is enclosed by the reflector cup, the pin structure and the substrate; a light emitting element is arranged on the pin structure in the recess, and electrically connected to the first and second electrodes; a packaging layer is formed in the recess to cover the light emitting element; and the packing layer and the upper surface of the reflector cup are processed by a sandblast technology. Compared with the prior art, the packaging layer is processed by the sandblast technology in the packing method, so that burr structure is removed while the surface of the packaging layer is processed into a rough accidented surface with trickle projections due to impact and cutting effects of the spraying material, thereby effectively improving yield rate of LED production, enhancing scattering of emitted lights, reducing occurrence rate of total reflection, and improving light extraction efficiency of an LED.

Description

LED encapsulation method
Technical field
The present invention relates to a kind of method for packaging semiconductor, relate in particular to a kind of LED encapsulation method.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be a kind of semiconductor element that current conversion can be become the light of particular range of wavelengths, rely on high, the advantages such as volume is little, lightweight, environmental protection of its luminous efficiency, be widely applied in the middle of the current every field.
In the reflector that package structure for LED generally includes pedestal, two electrodes of being combined with pedestal, be fixed on pedestal and the encapsulated layer that is connected to the light-emitting diode chip for backlight unit of two electrodes and encapsulates this light-emitting diode chip for backlight unit.The encapsulated layer of light-emitting diode be formed in the reflector and with the upper surface flush of reflector.This encapsulated layer normally forms by the mode of injection or cast, easily overflows or flows out in the self-reflection cup in the process of encapsulation and form the burr structure, affects the process rate of light-emitting diode.
Summary of the invention
The present invention aims to provide a kind of LED encapsulation method of removing encapsulated layer burr structure.
A kind of LED encapsulation method, may further comprise the steps: a substrate is provided, form pin configuration and reflector at substrate, described pin configuration comprises the first electrode and second electrode of space, and described reflector and this pin configuration and substrate jointly enclose and form a depression; Pin configuration in this depression arranges light-emitting component, and this light-emitting component is electrically connected to this first electrode and the second electrode; In depression, form an encapsulated layer to cover this light-emitting component; Reach the upper surface of processing encapsulated layer and reflector with sandblast technology.
Compare with prior art, the method for packing of above-mentioned light-emitting diode utilizes sandblast technology to process the encapsulated layer surface, impact and shear action by material spray, the coarse male and fomale(M﹠F) that when removing the burr structure, the Surface Machining of encapsulated layer is become to have trickle projection, not only Effective Raise the process rate of light-emitting diode, can also strengthen scattering, the reduction total reflection odds of emergent ray, thereby guarantee that bright dipping promotes the light extraction efficiency of this light-emitting diode uniformly simultaneously.
Description of drawings
Each step schematic diagram of the LED encapsulation method that Fig. 1 to Fig. 5 provides for the embodiment of the invention.
The main element symbol description
Light-emitting diode 100
Substrate 10
First surface 11
Second surface 12
Pin configuration 20
The first electrode 21
The second electrode 22
Reflector 30
Upper surface 31
Lower surface 32
Depression 33
Light-emitting component 40
Encapsulated layer 50
The burr structure 51
Male and fomale(M﹠F) 52
Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Below with reference to accompanying drawing light-emitting diode 100 method for packing of the present invention are described in further detail.
First step: at first see also Fig. 1, a substrate 10 is provided, this substrate 10 comprises a first surface 11 and one and the second surface 12 that is oppositely arranged of first surface 11.The first surface 11 of this substrate 10 forms a pin configuration 20, and described pin configuration 20 comprises one first electrode 21 and one second electrode 22 that is separated from each other, and each electrode 21,22 first surfaces 11 from this substrate 10 extend to this second surface 12.
Also form a reflector 30 on the first surface 11 of this substrate 10, described reflector 30 comprises a upper surface 31 and a lower surface 32, these reflector 30 surfaces can be formed with high reflecting material, this reflector 30 and this pin configuration 20 and the substrate first surface 11 that is not covered by pin configuration 20 jointly enclose and form a depression 33, and the top dimension of described depression 33 is greater than its bottom size.In the present embodiment, adopt to embed injection molding technology with this reflector 30 and this substrate 10 integrated injection moldings formation.
Second step: see also Fig. 2, on the surface of these the second electrode 22 1 ends this first electrode 21, close a light-emitting component 40 is set, described light-emitting component 40 is arranged in this depression 33.This light-emitting component 40 is electrically connected to respectively this first electrode 21, the second electrode 22 by wire.This light-emitting component 40 is LED crystal particle in the present embodiment.Understandable, in this step, also the form of light-emitting component 40 with flip-chip can be fixed on the pin configuration 20, and make two electrodes of light-emitting component 40 form and be electrically connected with the first electrode 21, the second electrode 22 respectively by the crystal-bonding adhesive of conduction.
Third step: see also Fig. 3, cover at this light-emitting component 40 and form an encapsulated layer 50.This encapsulated layer 50 is filled in this depression 33, and this encapsulated layer 50 usually inevitably overflows in this depression 33 and forms burr structure 51, these burr structure 51 local upper surfaces that cover reflector 30.This encapsulated layer 50 can be the transparent colloid that is doped with fluorescent material, and this fluorescent material can be one or more in garnet-base fluorescent material, silicate-base fluorescent material, orthosilicate base fluorescent powder, sulfide base fluorescent powder, thiogallate base fluorescent powder, nitrogen oxide base fluorescent powder and the nitride based fluorescent material.
The 4th step: see also Fig. 4 and Fig. 5, utilize sandblast technology to process the upper surface of this encapsulated layer 50 and reflector 30, the burr structure 51 of namely this depression 33 certainly being extended is processed.Concrete, adopting compressed air is that power forms the high velocity jet bundle, with the material spray high velocity jet to the surface of encapsulated layer 50, because impact and the shear action of material spray, so that burr structure 51 removed, and so that the surface of encapsulated layer 50 flush with the upper surface 31 of reflector 30.Simultaneously, the upper surface of the surface of encapsulated layer 50 and reflector 30 all is processed to form the coarse male and fomale(M﹠F) 52 that is evenly distributed with trickle projection, so that the exiting surface of light-emitting diode 100 becomes coarse, thereby guaranteeing that light-emitting diode 100 bright dippings reduce the probability of emergent ray generation total reflection uniformly simultaneously, thereby promoting the light extraction efficiency of light-emitting diode 100.
Compare with prior art, the method for packing of above-mentioned light-emitting diode 100 utilizes sandblast technology to process encapsulated layer 50 surfaces, impact and shear action by material spray, the coarse male and fomale(M﹠F) 52 that when removing burr structure 51, the Surface Machining of encapsulated layer 50 is become to have trickle projection, not only Effective Raise the process rate of light-emitting diode 100, can also strengthen scattering, the reduction total reflection odds of emergent ray, thereby guarantee that bright dipping promotes the light extraction efficiency of this light-emitting diode 100 uniformly simultaneously.Moreover, form coarse exiting surface when utilizing sandblast technology to remove burr structure 51, effectively simplify the packaging process of light-emitting diode 100, be convenient to a large amount of productions.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection range that all should belong to claim of the present invention with distortion.

Claims (7)

1. LED encapsulation method may further comprise the steps:
One substrate is provided, forms pin configuration and reflector at substrate, described pin configuration comprises the first electrode and second electrode of space, and described reflector and this pin configuration and substrate jointly enclose and form a depression;
Pin configuration in this depression arranges light-emitting component, and this light-emitting component is electrically connected to this first electrode and the second electrode;
In depression, form an encapsulated layer to cover this light-emitting component; And
Process the upper surface of encapsulated layer and reflector with sandblast technology.
2. LED encapsulation method as claimed in claim 1 is characterized in that, described step at substrate formation pin configuration and reflector adopts and embeds injection molding technology with this reflector and the formation of this substrate integrated injection molding.
3. LED encapsulation method as claimed in claim 1, it is characterized in that, process in the step of upper surface of encapsulated layer and reflector at described sandblast technology, this sandblast technology is processed into the coarse male and fomale(M﹠F) that is evenly distributed with trickle projection with the surface of encapsulated layer and the upper surface of reflector.
4. LED encapsulation method as claimed in claim 1 is characterized in that, described substrate comprises first surface and the second surface that is oppositely arranged, and described pin configuration extends to second surface from the first surface of substrate.
5. LED encapsulation method as claimed in claim 1 is characterized in that, describedly arrange in the step of light-emitting component in pin configuration, described light-emitting component be arranged on this first electrode, near on the surface of this second electrode one end.
6. LED encapsulation method as claimed in claim 5 is characterized in that, describedly arranges in the step of light-emitting component in pin configuration, and the mode by routing forms light-emitting component respectively and is electrically connected with the first electrode, the second electrode.
7. LED encapsulation method as claimed in claim 5 is characterized in that, describedly arranges in the step of light-emitting component in pin configuration, and the mode by flip-chip forms light-emitting component respectively and is electrically connected with the first electrode, the second electrode.
CN2012100988924A 2012-04-06 2012-04-06 Light-Emitting Diode (LED) packaging method Pending CN103367565A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2012100988924A CN103367565A (en) 2012-04-06 2012-04-06 Light-Emitting Diode (LED) packaging method
TW101114402A TW201342673A (en) 2012-04-06 2012-04-23 Method for manufacturing light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012100988924A CN103367565A (en) 2012-04-06 2012-04-06 Light-Emitting Diode (LED) packaging method

Publications (1)

Publication Number Publication Date
CN103367565A true CN103367565A (en) 2013-10-23

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Country Status (2)

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CN (1) CN103367565A (en)
TW (1) TW201342673A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103700758A (en) * 2013-12-16 2014-04-02 常州市武进区半导体照明应用技术研究院 LED (Light-emitting Diode) package unit, package methods thereof, and array area light source
CN103715340A (en) * 2013-12-16 2014-04-09 常州市武进区半导体照明应用技术研究院 LED packaging unit and LED packaging method and array surface light source
CN107452853A (en) * 2016-05-31 2017-12-08 日亚化学工业株式会社 Light-emitting device and its manufacture method
CN107658376A (en) * 2017-09-11 2018-02-02 聚灿光电科技（宿迁）有限公司 A kind of adopting surface mounted LED encapsulates particle
CN107731683A (en) * 2017-09-26 2018-02-23 木林森股份有限公司 treatment method for surface roughness of L ED lamp bead
CN107994108A (en) * 2017-12-26 2018-05-04 深圳市灏天光电有限公司 A kind of anti-fracture stent and its production method
WO2020062013A1 (en) * 2018-09-28 2020-04-02 江苏新云汉光电科技有限公司 Led lamp and luminance increasing method therefor
CN113329564A (en) * 2021-04-10 2021-08-31 山东永而佳电子科技有限公司 Light-emitting diode production process and surface roughening processing device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2829097Y (en) * 2005-01-25 2006-10-18 宏齐科技股份有限公司 LED with rough panel
CN2901584Y (en) * 2006-04-03 2007-05-16 一诠精密工业股份有限公司 Rubber seat structure improvement of SMD light emitting body rack
TW200903859A (en) * 2007-03-12 2009-01-16 Nichia Corp High power light emitting device and package for using the same
CN101471416A (en) * 2007-12-14 2009-07-01 美商克立股份有限公司 Textured encapsulant surface in LED packages
US20100133565A1 (en) * 2008-12-03 2010-06-03 Seoul Semiconductor Co., Ltd. Lead frame, light emitting diode having the lead frame, and backlight unit having the light emitting diode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2829097Y (en) * 2005-01-25 2006-10-18 宏齐科技股份有限公司 LED with rough panel
CN2901584Y (en) * 2006-04-03 2007-05-16 一诠精密工业股份有限公司 Rubber seat structure improvement of SMD light emitting body rack
TW200903859A (en) * 2007-03-12 2009-01-16 Nichia Corp High power light emitting device and package for using the same
CN101471416A (en) * 2007-12-14 2009-07-01 美商克立股份有限公司 Textured encapsulant surface in LED packages
US20100133565A1 (en) * 2008-12-03 2010-06-03 Seoul Semiconductor Co., Ltd. Lead frame, light emitting diode having the lead frame, and backlight unit having the light emitting diode

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103700758A (en) * 2013-12-16 2014-04-02 常州市武进区半导体照明应用技术研究院 LED (Light-emitting Diode) package unit, package methods thereof, and array area light source
CN103715340A (en) * 2013-12-16 2014-04-09 常州市武进区半导体照明应用技术研究院 LED packaging unit and LED packaging method and array surface light source
CN107452853A (en) * 2016-05-31 2017-12-08 日亚化学工业株式会社 Light-emitting device and its manufacture method
CN113410369A (en) * 2016-05-31 2021-09-17 日亚化学工业株式会社 Light emitting device and method for manufacturing the same
US11430928B2 (en) 2016-05-31 2022-08-30 Nichia Corporation Light-emitting device with exposed filter particles
CN107658376A (en) * 2017-09-11 2018-02-02 聚灿光电科技（宿迁）有限公司 A kind of adopting surface mounted LED encapsulates particle
CN107731683A (en) * 2017-09-26 2018-02-23 木林森股份有限公司 treatment method for surface roughness of L ED lamp bead
CN107994108A (en) * 2017-12-26 2018-05-04 深圳市灏天光电有限公司 A kind of anti-fracture stent and its production method
WO2020062013A1 (en) * 2018-09-28 2020-04-02 江苏新云汉光电科技有限公司 Led lamp and luminance increasing method therefor
CN113329564A (en) * 2021-04-10 2021-08-31 山东永而佳电子科技有限公司 Light-emitting diode production process and surface roughening processing device

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Application publication date: 20131023