CN102254798A - Method for manufacturing silicon carbide PIN microstructure - Google Patents
Method for manufacturing silicon carbide PIN microstructure Download PDFInfo
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- CN102254798A CN102254798A CN2011101778416A CN201110177841A CN102254798A CN 102254798 A CN102254798 A CN 102254798A CN 2011101778416 A CN2011101778416 A CN 2011101778416A CN 201110177841 A CN201110177841 A CN 201110177841A CN 102254798 A CN102254798 A CN 102254798A
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Abstract
The invention provides a method for manufacturing a silicon carbide PIN microstructure, comprising the following steps: step 1, taking an n-type silicon carbide substrate; step 2, carrying out hydrogen etching on the surface of the n-type silicon carbide substrate; step 3, growing an n-type changing concentration buffer layer on the n-type silicon carbide substrate; step 4, epitaxially growing an intrinsic epitaxial layer on the n-type changing concentration buffer layer; step 5, adopting an ion injection method to manufacture a P-type layer on the intrinsic epitaxial layer; and step 6, annealing to finish the manufacturing of the silicon carbide PIN microstructure.
Description
Technical field
The invention belongs to wide bandgap semiconductor epitaxial material preparation field, particularly relate to a kind of preparation method of carborundum homogeneity PIN micro-structural.
Background technology
Carborundum is the material of the multiple crystal habit of a kind of homogeneity, and the crystalline form of discovery is above 250 kinds.In the numerous polytypes of SiC, 4H-SiC is with its energy gap big (3.26eV), mobility height (900cm
2/ Vs) and superior function such as anisotropy is smaller and be considered to be more suitable in making high-power high back-pressure electronic device.In addition, carborundum chemistry inertia is good, high temperature resistant, and radioresistance has huge application potential in the high-power electric and electronic field, and therefore, design and material and the device made based on homogeneity SiC have important practical significance.The SiC material of PiN structure can also inject the special design of the P type layer that forms to realize the higher power density and the switching speed of higher frequency according to i type intrinsic layer and ion except having conventional PiN performance.
Compare with prior art 200910237845.1, the present invention uses ion to inject and does not adopt in-situ doped, compare with in-situ doped, ion injection method has the following advantages: 1. ion injects and can inject energy of ions and quantity by regulating, accurately the degree of depth and the concentration of controlled doping; 2. the horizontal proliferation of ion implantation doping is little, and the dimension of picture of injection zone can be littler, helps integrated level; 3. ion injects and can realize that large tracts of land evenly mixes and high concentration is arranged; 4. ion injects the restriction that is not subjected to chemical bond power, diffusion coefficient and solid solubility etc., can mix under required arbitrarily temperature; 5. ion injects and can reach the requirement that high-purity is mixed, and avoids harmful substance to enter semi-conducting material, can improve the performance of PiN device.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of SiC homogeneity PiN fine structure material, it is to adopt ion to inject, and can improve repeatability and consistency that device is made, is applicable to the preparation of semiconductor device for high-power power electronic.
The technical solution used in the present invention is: a kind of manufacture method of carborundum PiN micro-structural comprises the steps:
Step 1: get a n type silicon carbide substrates;
Step 2: the hydrogen etching is carried out on the surface to n type silicon carbide substrates;
Step 3: n grows on n type silicon carbide substrates
-Type degree of thickening resilient coating;
Step 4: at n
-Epitaxial growth intrinsic epitaxial loayer on type degree of the thickening resilient coating;
Step 5: adopt ion implantation, preparation P type layer on the intrinsic epitaxial loayer;
Step 6: annealing, finish the making of carborundum PiN micro-structural.
Wherein used n type silicon carbide substrates is the single-crystal silicon carbide body material of n type six side's phases, rib side's phase or cube phase, and carrier concentration is 10
18-10
21
N wherein
-The thickness of type degree of thickening resilient coating is the 2-6 micron, and doping content is along the normal direction linear decrease of n type silicon carbide substrates, and its doping content near n type silicon carbide substrates surface is 10
16-10
18, its surface doping content is 10
14-10
15
Wherein the doping content of intrinsic epitaxial loayer is 10
13-10
15, thickness 6-14 micron.
The P type layer that wherein prepares on the intrinsic epitaxial loayer forms by injecting the Al ion in the intrinsic epi-layer surface, and the thickness of this p type layer is the 80-150 nanometer, and its p type carrier concentration is 10
18-10
20
N wherein
-Type degree of thickening resilient coating, intrinsic epitaxial loayer and p type layer three crystal formation, orientation are consistent with n type silicon carbide substrates.
Hydrogen etching n type silicon carbide substrates wherein, used etching pressure are 40 millitorrs-100 holders, and temperature is 1350-1550 ℃, and hydrogen flowing quantity is the 5-20 standard liter/min, and etch period is 10-60 minute.
N wherein grows
-During type degree of thickening resilient coating, growth pressure is 40 millitorrs-100 holders, growth temperature is 1500-1550 ℃, feeding flow when being lower than growth temperature 20-50 ℃ is the carbon source of 1-10 standard ml/min, used carbon source is the anaerobic high-purity gas of carbon containing, and n type silicon carbide substrates is heated to growth temperature with 5-20 ℃/minute speed; In carbon, silicon atom mol ratio is the ratio feeding silicon source of 1-2, and used silicon source is siliceous anaerobic high-purity gas, n
-Hydrogen flowing quantity is the 5-20 standard liter/min during type degree of thickening buffer growth, and growth time is 40-80min.
When wherein growing the intrinsic epitaxial loayer, growth pressure is 40 millitorrs-100 holders, growth temperature is 1500-1550 ℃, feeding flow when being lower than growth temperature 20-50 ℃ is the carbon source of 1-10 standard ml/min, used carbon source is the anaerobic high-purity gas of carbon containing, and n type silicon carbide substrates is heated to growth temperature with 5-20 ℃/minute speed; In carbon, silicon atom mol ratio is the ratio feeding silicon source of 1-2, and used silicon source is siliceous anaerobic high-purity gas, n
-Hydrogen flowing quantity is the 5-20 standard liter/min during type degree of thickening buffer growth, and growth time is 100-150min.
Its intermediate ion injects when forming p type layer, and injection technology is injected for the multistep ion, and the ion that is injected is the Al ion.
The beneficial effect that the present invention has is:
(1) resilient coating is a doping content linear gradient layer, introduces a gradual transition zone between n type substrate and intrinsic layer, helps bearing higher power density;
(2) adopt the Al ion to inject and form P type layer, can improve repeatability and consistency that device is made;
(3) the p implanted layer is relatively very thin, guaranteeing to help reducing hole migration length under the p type ohmic contact good premise, improves switching speed.
Description of drawings
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is a carborundum PIN micro-structural schematic diagram of the present invention.
Embodiment
See also shown in Figure 1ly, the invention provides a kind of manufacture method of carborundum PiN micro-structural, comprise the steps:
Step 1: get a n type silicon carbide substrates 1, used n type silicon carbide substrates 1 is the single-crystal silicon carbide body material of n type six side's phases, rib side's phase or cube phase, and carrier concentration is 10
18-10
21, the carbofrax material high temperature high voltage resistant can extremely reach operate as normal under the mal-condition, and the silicon materials that are used for element manufacturing with routine are compared, and have bigger application prospect;
Step 2: the hydrogen etching is carried out on the surface to n type silicon carbide substrates 1, and this is the necessary step of carbofrax material growth, prepares for follow-up material growth, to grow the outstanding silicon carbide epitaxial layers of performance.Described hydrogen etching n type silicon carbide substrates 1, used etching pressure are 40 millitorrs-100 holders, and temperature is 1350-1550 ℃, and hydrogen flowing quantity is the 5-20 standard liter/min, and etch period is 10-60 minute;
Step 3: n grows on n type silicon carbide substrates 1
-Type degree of thickening resilient coating 2, this n
-The thickness of type degree of thickening resilient coating 2 is the 2-6 micron, and doping content is along the normal direction linear decrease of n type silicon carbide substrates 1, and its doping content near n type silicon carbide substrates 1 surface is 1016-1018, and its surface doping content is 1014-1015, described growth n
-During type degree of thickening resilient coating 2, growth pressure is 40 millitorrs-100 holders, growth temperature is 1500-1550 ℃, feeding flow when being lower than growth temperature 20-50 ℃ is the carbon source of 1-10 standard ml/min, used carbon source is the anaerobic high-purity gas of carbon containing, and n type silicon carbide substrates 1 is heated to growth temperature with 5-20 ℃/minute speed; In carbon, silicon atom mol ratio is the ratio feeding silicon source of 1-2, and used silicon source is siliceous anaerobic high-purity gas, n
-Hydrogen flowing quantity is the 5-20 standard liter/min during 2 growths of type degree of thickening resilient coating, and growth time is 40-80min;
Step 4: epitaxial growth intrinsic epitaxial loayer 3 on resilient coating 2, the doping content of this intrinsic epitaxial loayer 3 is 10
13-10
15Thickness 6-14 micron, during described growth n-type degree of thickening resilient coating 2, growth pressure is 40 millitorrs-100 holders, growth temperature is 1500-1550 ℃, feeding flow when being lower than growth temperature 20-50 ℃ is the carbon source of 1-10 standard ml/min, and used carbon source is the anaerobic high-purity gas of carbon containing, and n type silicon carbide substrates 1 is heated to growth temperature with 5-20 ℃/minute speed; In carbon, silicon atom mol ratio is the ratio feeding silicon source of 1-2, and used silicon source is siliceous anaerobic high-purity gas, n
-Hydrogen flowing quantity is the 5-20 standard liter/min during 2 growths of type degree of thickening resilient coating, and growth time is 100-150min;
Step 5: adopt ion implantation, preparation P type layer 4 on intrinsic epitaxial loayer 3, it forms by injecting the Al ion on intrinsic epitaxial loayer 3 surfaces, and the thickness of this p type layer 4 is the 80-150 nanometer, and its p type carrier concentration is 10
18-10
20Described ion injects when forming p type layer 4, injection technology is injected for the multistep ion, the ion that is injected is the Al ion, than additive method, ion implantation have processing temperature low, uniformly the large tracts of land implanted dopant, be easy to advantage such as control, become element manufacturing doping process relatively more commonly used;
Step 6: annealing, finish the making of carborundum PiN micro-structural.
N wherein
-Type degree of thickening resilient coating 2, intrinsic epitaxial loayer 3 and p type layer 4 three's crystal formation, orientation are consistent with n type silicon carbide substrates 1.
Embodiment 1
Please consult shown in Figure 1 again, adopt monocrystalline 4H-SiC substrate, its Si (0001) surface is towards＜1120〉direction inclined to one side 8 °, handle through chemical polishing, put into low pressure chemical vapor deposition equipment after cleaning up, feed hydrogen, keep-uping pressure is 40 holders, insulation after being warming up to 1350 ℃ is carried out etching polishing, etching 30 minutes with hydrogen to substrate surface.Be warming up to 1500 ℃ with 40 ℃/minute heating rate then, feed the ethene of 1sccm flow, when substrate surface is warming up to 1550 ℃, feed the silane of 1sccm flow, keep temperature-resistant, grew 180 minutes, finish the growth of resilient coating and intrinsic layer.Whole growth process pressure remains on 40 holders, and hydrogen flowing quantity is 3000sccm, until growth ending.Use the multistep ion implantation technique afterwards, inject the Al ion, inject energy and dosage and be respectively: 160KeV, 2.44 * 10 to the intrinsic layer surface
14Cm
-270KeV, 1 * 10
14Cm
-230KeV, 6 * 10
13Cm
-2At last the sample after injecting is carried out high annealing to eliminate implant damage and to activate and inject ion under 1600 ℃.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the manufacture method of a carborundum PiN micro-structural comprises the steps:
Step 1: get a n type silicon carbide substrates;
Step 2: the hydrogen etching is carried out on the surface to n type silicon carbide substrates;
Step 3: n grows on n type silicon carbide substrates
-Type degree of thickening resilient coating;
Step 4: at n
-Epitaxial growth intrinsic epitaxial loayer on type degree of the thickening resilient coating;
Step 5: adopt ion implantation, preparation P type layer on the intrinsic epitaxial loayer;
Step 6: annealing, finish the making of carborundum PiN micro-structural.
2. the manufacture method of carborundum PiN micro-structural according to claim 1, wherein used n type silicon carbide substrates are the single-crystal silicon carbide body material of n type six side's phases, rib side's phase or cube phase, and carrier concentration is 10
18-10
21
3. the manufacture method of carborundum PiN micro-structural according to claim 1, wherein n
-The thickness of type degree of thickening resilient coating is the 2-6 micron, and doping content is along the normal direction linear decrease of n type silicon carbide substrates, and its doping content near n type silicon carbide substrates surface is 10
16-10
18, its surface doping content is 10
14-10
15
4. the manufacture method of carborundum PiN micro-structural according to claim 1, wherein the doping content of intrinsic epitaxial loayer is 10
13-10
15, thickness 6-14 micron.
5. the manufacture method of carborundum PiN micro-structural according to claim 1, the P type layer that wherein on the intrinsic epitaxial loayer, prepares, form by injecting the Al ion in the intrinsic epi-layer surface, the thickness of this p type layer is the 80-150 nanometer, and its p type carrier concentration is 10
18-10
20
6. the manufacture method of carborundum PiN micro-structural according to claim 1, wherein n
-Type degree of thickening resilient coating, intrinsic epitaxial loayer and p type layer three crystal formation, orientation are consistent with n type silicon carbide substrates.
7. the manufacture method of carborundum PiN micro-structural according to claim 1, hydrogen etching n type silicon carbide substrates wherein, used etching pressure are 40 millitorrs-100 holders, and temperature is 1350-1550 ℃, hydrogen flowing quantity is the 5-20 standard liter/min, and etch period is 10-60 minute.
8. the manufacture method of carborundum PiN micro-structural according to claim 1, n wherein grows
-During type degree of thickening resilient coating, growth pressure is 40 millitorrs-100 holders, growth temperature is 1500-1550 ℃, feeding flow when being lower than growth temperature 20-50 ℃ is the carbon source of 1-10 standard ml/min, used carbon source is the anaerobic high-purity gas of carbon containing, and n type silicon carbide substrates is heated to growth temperature with 5-20 ℃/minute speed; In carbon, silicon atom mol ratio is the ratio feeding silicon source of 1-2, and used silicon source is siliceous anaerobic high-purity gas, n
-Hydrogen flowing quantity is the 5-20 standard liter/min during type degree of thickening buffer growth, and growth time is 40-80min.
9. the manufacture method of carborundum PiN micro-structural according to claim 1, when wherein growing the intrinsic epitaxial loayer, growth pressure is 40 millitorrs-100 holders, growth temperature is 1500-1550 ℃, feeding flow when being lower than growth temperature 20-50 ℃ is the carbon source of 1-10 standard ml/min, used carbon source is the anaerobic high-purity gas of carbon containing, and n type silicon carbide substrates is heated to growth temperature with 5-20 ℃/minute speed; In carbon, silicon atom mol ratio is the ratio feeding silicon source of 1-2, and used silicon source is siliceous anaerobic high-purity gas, n
-Hydrogen flowing quantity is the 5-20 standard liter/min during type degree of thickening buffer growth, and growth time is 100-150min.
10. the manufacture method of carborundum PiN micro-structural according to claim 1, its intermediate ion are injected when forming p type layer, and injection technology is injected for the multistep ion, and the ion that is injected is the Al ion.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102856441A (en) * | 2012-09-14 | 2013-01-02 | 京东方科技集团股份有限公司 | Manufacture methods of X-ray detector back panel and PIN photodiode |
| CN103219431A (en) * | 2013-04-19 | 2013-07-24 | 京东方科技集团股份有限公司 | Photodiode, manufacturing method of photodiode, X-ray detector base plate and manufacturing method of X-ray detector base plate |
| CN105006425A (en) * | 2015-06-08 | 2015-10-28 | 国网智能电网研究院 | Stepless aggregation epitaxial growth method of low-drift-angle silicon carbide |
| CN105002563A (en) * | 2015-08-11 | 2015-10-28 | 中国科学院半导体研究所 | Silicon carbide epitaxial layer regional doping method |
| CN108630779A (en) * | 2018-05-04 | 2018-10-09 | 中国电子科技集团公司第十三研究所 | Be carbonized silicon detector and preparation method thereof |
| CN111681947A (en) * | 2020-05-22 | 2020-09-18 | 东莞市天域半导体科技有限公司 | Epitaxial method for reducing stacking fault defects of epitaxial wafer and application thereof |
| CN111769034A (en) * | 2020-06-04 | 2020-10-13 | 东莞市天域半导体科技有限公司 | Preparation method of gradient PN junction material |
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| CN108630779A (en) * | 2018-05-04 | 2018-10-09 | 中国电子科技集团公司第十三研究所 | Be carbonized silicon detector and preparation method thereof |
| CN111681947A (en) * | 2020-05-22 | 2020-09-18 | 东莞市天域半导体科技有限公司 | Epitaxial method for reducing stacking fault defects of epitaxial wafer and application thereof |
| CN111681947B (en) * | 2020-05-22 | 2022-03-29 | 东莞市天域半导体科技有限公司 | Epitaxial method for reducing stacking fault defects of epitaxial wafer and application thereof |
| CN111769034A (en) * | 2020-06-04 | 2020-10-13 | 东莞市天域半导体科技有限公司 | Preparation method of gradient PN junction material |
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Application publication date: 20111123 |