User talk:50.84.151.42
"Originally, plasma was generated in the process chamber, but as the need to get rid of free radicals has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and the desired particles are channeled to the wafer."
I don't think this is correct. Free radicals are used for the ashing process. My understanding is that the downstream plasma (or remote plasma) configuration removes ions. It may also remove some free radicals but that is not the purpose for using a downstream plasma configuration.
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