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- research-articleAugust 2024
War strategy optimization-based methods for pattern synthesis of antenna arrays and optimization of microstrip patch antenna
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 1125–1134https://doi.org/10.1007/s10825-024-02210-4AbstractThis paper first presents an application of the war strategy optimization (WSO) algorithm in pattern synthesis of antenna arrays and dimensions optimization of microstrip patch antenna. As a new type of evolutionary algorithm inspired by nature, ...
- research-articleAugust 2024
Strain engineered < Si/Si0.97C0.03 > superlattice photodetector for optoelectronic applications: a comprehensive numerical analysis and experimental verification
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 1111–1124https://doi.org/10.1007/s10825-024-02209-xAbstractIn this paper, a strain-modified Si/Si0.97C0.03 asymmetrical superlattice exotic type (p + -i-p-n +) avalanche photodetector has been designed for applications on the infrared wavelength region. The photoelectric characteristics of the device are ...
- research-articleAugust 2024
Theoretical calculations of the optoelectronic properties of a penta-graphene monolayer: study of many-body effects
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 1102–1110https://doi.org/10.1007/s10825-024-02208-yAbstractBased on density functional theory (DFT), the GW approximation and Bethe–Salpeter equation (BSE), we performed a theoretical calculation to study the electronic and optical properties of penta-graphene (PG) monolayers. Our findings reveal that PG ...
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- research-articleAugust 2024
Study of chalcogenide-based metal perovskites BaZrX3 (X = S and Se): DFT insight into fundamental properties for sustainable energy generation using AMPS-1D
- Naincy Pandit,
- Rashmi Singh,
- Peeyush Kumar Kamlesh,
- Nitin Kumar,
- Pawan Sharma,
- Sarita Kumari,
- Tanuj Kumar,
- Samah Al-Qaisi,
- Ajay Singh Verma
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 1014–1028https://doi.org/10.1007/s10825-024-02201-5AbstractContextEmerging materials inspire us to study one of the perovskite chalcogens made from alkaline-earth-metals (Baryum). Here, we have determined some fundamental properties and explained their applicability in energy conversion device fabrication ...
- research-articleJuly 2024
Nonlinear dynamics of a Josephson junction coupled to a diode and a negative conductance
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 1000–1013https://doi.org/10.1007/s10825-024-02200-6AbstractWe studied the nonlinear dynamics of a shunted inductive Josephson junction coupled to a diode and a negative conductance. Taking into account the non-harmonicity of the junction, based on Kirchhoff’s laws, we have developed the mathematical model ...
- research-articleJuly 2024
- research-articleJuly 2024
Feasibility of a 9 THz HgTe/HgCdTe quantum-well vertical-cavity surface-emitting laser
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 986–990https://doi.org/10.1007/s10825-024-02198-xAbstractWe propose an original design for a HgCdTe-based terahertz vertical-cavity surface-emitting laser with twenty 5 nm HgTe quantum wells. Feasibility of laser generation at 9 THz and a lattice temperature of 8 K is shown. The estimate of the ...
- research-articleJuly 2024
Enhancing the analysis of external quantum efficiency in OLEDs utilizing thin transport layer materials
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 977–985https://doi.org/10.1007/s10825-024-02197-yAbstractOLED technology, a revolutionary approach to display and lighting, offers thin, flexible, and vibrant solutions that redefine the visual experience in various devices. External quantum efficiency, a key metric, provides valuable insights into how ...
- research-articleJuly 2024
Compact model for MFIS-NCFETs considering deep-level interface trap states
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 945–956https://doi.org/10.1007/s10825-024-02194-1AbstractA direct current (DC) compact model for negative capacitance field-effect transistors (NCFETs) based on a metal-ferroelectric-insulator-semiconductor (MFIS) structure is proposed, considering the influence of deep-level interface trap states. To ...
- research-articleJune 2024
A computational investigation on the adsorption behavior of bromoacetone on B36 borophene nanosheets
Journal of Computational Electronics (SPJCE), Volume 23, Issue 5Pages 931–944https://doi.org/10.1007/s10825-024-02192-3AbstractDensity functional theory (DFT) methods are employed to investigate the capability of B36 borophene nanosheets as sensors for detecting the bromoacetone (BCT) molecule. An evaluation of the structural and electronic properties of both BCT and B36 ...
- research-articleMay 2023
Resistance saturation in semi-conducting polyacetylene molecular wires
Journal of Computational Electronics (SPJCE), Volume 22, Issue 5Pages 1363–1376https://doi.org/10.1007/s10825-023-02043-7AbstractRealizing the promises of molecular electronic devices requires an understanding of transport on the nanoscale. Here, we consider a Su-Schrieffer-Heeger model for semi-conducting trans-polyacetylene molecular wires in which we endow charge ...
- research-articleFebruary 2023
Transverse dielectric and lateral channel band engineering of drain-side and source-side injection in Ge-based charge-trapping memory cells for energy-efficient applications
Journal of Computational Electronics (SPJCE), Volume 22, Issue 1Pages 128–147https://doi.org/10.1007/s10825-022-01997-4AbstractGe is an attractive alternative to replace Si as the body material for scaled CMOS technologies. This work comprehensively investigates hot-electron generation and injection in the Ge-based channel body and gate dielectric charge-trapping memory. ...
- correctionJanuary 2023
- research-articleJanuary 2023
Comparative of analog performance of transcapacitances in asymmetric self-cascode and graded-channel SOI nMOSFETs
Journal of Computational Electronics (SPJCE), Volume 22, Issue 1Pages 148–154https://doi.org/10.1007/s10825-022-01998-3AbstractThis work presents a comparative study of the transcapacitances of an asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs with different gate lengths. This analysis was done by means of two-dimensional ...
- research-articleJanuary 2023
Optoelectronic properties of monolayer and bilayer AgI: role of many-body interactions
Journal of Computational Electronics (SPJCE), Volume 22, Issue 1Pages 96–105https://doi.org/10.1007/s10825-022-01984-9AbstractIn an outstanding experimental advance in the field of two-dimensional materials, monolayer AgI was synthesized using a graphene encapsulation approach (Mustonen et al. in Adv Mater 34(9):2106922, 2022). Herein, inspired by this experimental ...