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- research-articleOctober 2024
Impact of Electron and Hole Trap Profiles in BE-TOX on Retention Characteristics of 3D NAND Flash Memory
- Gilsang Yoon,
- Donghyun Go,
- Jounghun Park,
- Donghwi Kim,
- Jongwoo Kim,
- Ukju An,
- Jungsik Kim,
- Jeong-Soo Lee,
- Byoung Don Kong
IEEE Transactions on Nanotechnology (ITN), Volume 23Pages 733–740https://doi.org/10.1109/TNANO.2024.3481392Trap profiles in the bandgap-engineered tunneling oxide (BE-TOX) layer of a 3D NAND flash memory were investigated using a transient current trap spectroscopy technique. A new pulse scheme was introduced to generate channel holes and subsequently analyze ...