Properties of photoelectricity of WOx-doped ITO thin films

Ye Liu; Zhuying Li; Chong Wang; Hui Liu; Shan Luo

doi:10.1117/12.866684

29 October 2010 Properties of photoelectricity of WO_x-doped ITO thin films

Ye Liu, Zhuying Li, Chong Wang, Hui Liu, Shan Luo

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 765842 (2010) https://doi.org/10.1117/12.866684
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Indium-tin-oxide (ITO) film is an n-semiconductor transparent conductive film. It has many good properties: conductivity, transmittance in visible region, absorptivity in ultraviolet. And tungsten oxide has good conductivity and it can keep stable structure in high temperature, also it has wearable and anti-corrupt properties. Therefore, tungsten oxide can be added gradually on ITO thin films by magnetron sputtering to research the optical and electrical performance of the doped films. We research the performance of the doped films in five aspects: X-ray diffraction spectroscopy, Scanning electron microscope are used to investigate the crystal structure, surface morphology. UV-visible spectroscopy is used to display the transmittance and absorption spectrum of the films. The thin films' performance of electrochemistry is tested by the workstation of electrochemistry. Its conductivity is tested by Four-probe sheet resistivity meter. The main conclusion: The analysis of SEM results shows that the surface morphology of the films is granulated. Transmittance spectrums suggest that the transmittance of ITO films have been increased by proper doping, the percentage of transmittance is over 90% from visible to near-infrared region. Besides, it shows well in the properties of electricity and electrochemistry in the doped films.

Citation Download Citation

Ye Liu, Zhuying Li, Chong Wang, Hui Liu, and Shan Luo "Properties of photoelectricity of WO_x-doped ITO thin films", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765842 (29 October 2010); https://doi.org/10.1117/12.866684

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KEYWORDS

Thin films

Transmittance

Doping

Absorption

Sputter deposition

Resistance

Scanning electron microscopy

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