Intermixing effect on asymmetric quantum well

Guibin Chen; Zhifeng Li; Zhongli Miao; Xiaoshuang Chen; Wei Lu

doi:10.1117/12.453828

5 December 2002 Intermixing effect on asymmetric quantum well

Guibin Chen, Zhifeng Li, Zhongli Miao, Xiaoshuang Chen, Wei Lu

Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.453828
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Ion implantation enhanced intermixing of quantum well has become an important technology in device fabrication and material modification. We report the intermixing effect in a single asymmetric coupled quantum well (GaAs/AlGaAs) at different ion implantation dose by photoluminescence. More than 80meV of blue shift of the interband transition was observed before rapid thermal annealing process. It indicates that the intermixing has almost finished during the implantation process. A diffusion length of 1nm is obtained by the theoretical analysis.

Citation Download Citation

Guibin Chen, Zhifeng Li, Zhongli Miao, Xiaoshuang Chen, and Wei Lu "Intermixing effect on asymmetric quantum well", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.453828

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