INDIAN SCHOOL AL GHUBRA

DEPARTMENT OF PHYSICS
WORKSHEET
ELECTRONIC DEVICES

ENERGY BANDS
1. Distinguish between a conductor, a semiconductor and an insulator on the basis of energy
band diagrams.
If the valence and conduction bands overlap, the substance is referred as a conductor. If the valence and conduction
bands have a forbidden gap more than 3 eV, the substance is an insulator. If the valence and condition bands have a
small forbidden gap (1 eV), the substance is a semiconductor.

Energy bands in conductors

Energy band of an insulator

Energy band of a semi conductor:

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2. Draw energy band diagrams of an n-type and p-type semiconductor at temperature T > 0 K. Mark the
donor and acceptor energy levels with their energies.

N-type semiconductor P-type semiconductor

3. Distinguish between an intrinsic semiconductor and P-type semiconductor. Give reason,

why a P-type semiconductor crystal is electrically neutral, although nh >> ne ?

P-type semiconductor is electrically neutral because every atom, whether it is of pure semiconductor (Ge or Si) or of
impurity (Al) is electrically neutral.
SEMICONDUCTOR DIODE
4. Name the important process that occur during the formation of a p-n junction. Explain briefly,
with the help of a suitable diagram, how a p-n junction is formed. Define the term 'barrier
potential'.

Two important processes occur during the formation of a p-n junction: diffusion and drift.

Diffusion: It is the process of movement of majority charge carriers from their majority zone
(.i.e., electrons from and holes from ) to the minority zone across the junction on account of
different concentration gradient on the two sides of the junction.

At the junction there is diffusion of charge carriers due to thermal agitation; so that some of
electrons of mn-region diffuse to p-region while some of holes of p-region diffuse into n-region.
Some charge carriers combine with opposite charges to neutralise each
other. Thus near the junction there is an excess of positively charged ions in n-region and an
excess of negatively charged ions in p-region. This sets up a potential difference called potential
barrier and hence an internal electric field Ei across the junctions.

Drift: Process of movement of minority charge carriers (i.e., holes from and electrons from ) due
to the electric field developed at the junction

Due to the positive space-charge region on n-side of the junction and negative space charge
region on p-side of the junction, an electric field directed from positive charge towards
negative charge develops. Due to this field, an electron on p-side of the junction moves to n-side
and a hole on nside of the junction moves to p-side. The motion of charge carriers due to the
electric field is called drift.

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 Barrier potential: The loss of electrons from the n-region and gain of electrons by p-region
causes a difference of potential across the junction, whose polarity is such as to oppose and then
stop the further flow of charge carriers. This (stopping) potential is called Barrier potential.

Barrier potential variation in forward bias

(1) without battery, (2) Low battery voltage, and (3) High voltage battery.

Barrier potential under reverse bias.

5. (i) With the help of circuit diagrams distinguish between forward biasing and reverse
biasing of a p-n junction diode.
(ii) Draw V-I characteristics of a p-n junction diode in (a) forward bias, (b) reverse bias.
(i) Forward Bias: In this arrangement the positive terminal of battery is connected to p-end
and negative terminal to n-end of the crystal, so that an external electric field E is
established directed from p to n-end to oppose the internal field Ei as shown in Fig. The
external field E is much stronger than internal field Ei

Reverse Bias: In this arrangement the positive terminal of battery is connected to n-end
and negative terminal to p-end of the crystal, so that the external field is established to
help the internal field Ei as shown in Fig. Under the biasing the holes in p-region and the
electrons in n-region are pushed away from the junction to widen the depletion layer and
hence increases the potential barrier, therefore the current flow stops.

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 Experimental circuit arrangement for studying V-I characteristics of a p-n junction diode (a) in
forward bias , (b) in reverse bias.

6. With the help of a suitable diagram, explain the formation of depletion region in a p-n
junction. How does its width change when the junction is (i) forward biased, and (ii) reverse
biased?
Formation of Depletion Layer: At the junction there is diffusion of charge carriers due to thermal
agitation; so that some of electrons of n-region diffuse to p-region while some of holes of p-region
diffuse into n-region. Some charge carriers combine with opposite charges to neutralise each other. Thus
near the junction there is an excess of positively charged ions in n-region and an excess of negatively
charged ions in p-region. This sets up a potential difference and hence an internal electric field Ei across the
junctions. The field Ei is directed from n-region to p-region. This field stops the further diffusion of charge
carriers. Thus the layers (» 10- 4 cm to 10- 6 cm) on either side of the junction becomes free from mobile
charge carriers and hence is called the depletion layer.

The symbol of p-n junction diode is shown in Fig.

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 Effect of Forward and Reverse Bias:
(i) Under forward biasing the applied potential difference causes a field which acts opposite to the
potential barrier. This results in reducing the potential barrier, and hence the width of depletion layer
decreases.

(ii) Under reverse biasing the applied potential difference causes a field which is in the same direction as
the field due to internal potential barrier. This results in an increase in barrier voltage and hence the width
of depletion layer increases.

7. How does the width of the depletion layer of a p-n junction diode change with decrease in reverse bias ?
If the reverse bias across a p-n junction is decreased, the depletion region of p-n junction decreases.
8. Explain briefly how
(a) a barrier potential is formed in a p-n junction diode;
(b) the width of the depletion region is affected when it is
(i) forward biased, and (ii) reverse biased.
OR
(a) Explain the formation of ‘depletion layer' and ‘barrier potential’ in a p-n junction.

(a) Formation of Potential Barrier: Due to difference in the concentration of charge carriers across
the junction in p and n sides holes diffuse from p side to n side and electron diffuse from n side to
p side which give rise to diffusion current across the junction. Near the junction electrons diffuse
from n to p side to create positive space charge region in n-side and holes diffused from p to n side
create negative space charge region in p-side. The positive and negative space charge
region near the junction is called depletion layer. Due to deficiency of holes and electrons
in p and n sides a potential barrier is setup across the junction. Electric field is set up in
the layer which is directed from n to p side and gives rise to drift current.
(b) Effect on width of depletion layer
(i)decreases/ becomes less in forward bias
(ii)increases/ becomes more in reverse bias.

9. Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half
wave rectifier?

Half Wave Rectifier: The circuit diagram for junction diode as half wave rectifier is shown in
figure.

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 Let during first half the cycle the secondary terminal S1 of trasformer be positive relative to S2,
then the junction diode is forward biased. Therefore the current flows and its direction in load
resistance RL is from A to B. In next half cycle the terminal S1 is negative relative to S2 then the
diode is in reverse bias, therefore no current flows in diode and hence there is no potential
difference across load RL. Therefore the output current in load flows only when S1 is positive
relative to S2. That is during first half cycles of input a.c. signal there is a current in circuit and
hence a potential difference across load resistance RL while no current flows for next half cycle.
The direction of current in load is always from A to B. Thus a single p-n junction diode acts as a
half wave rectifier. The input and output waveforms of half wave rectifier are shown in fig. (b).
10. Draw a circuit diagram of a full-wave rectifier. Explain its working principle. Draw the
input/output wave-forms indicating clearly the functions of the two diodes used.

Principle: Current in a diode flows only when it is forward biased

For full wave rectifier we use two junction diodes. The circuit diagram for full wave rectifier
using two junction diodes is shown in figure.

Working (Brief): A full wave rectifier uses two diodes. In one half of a.c. signal if one of the
diodes is forward biased, it will conduct and the second diode being reverse biased, will not
conduct. In second half of a.c. signal reverse will happen so other diode will conduct and give
output across the load resistance.

Explanation:
Suppose during first half cycle of input ac signal the terminal A is positive relative to CENTRE
TAP and B is negative relative to centre , then diode 1is forward biased and diode 2 is reverse
biased. Therefore current flows in diode 1and not in diode 2. The direction of current i1 due to
diode I in load resistance RL is directed from X to Y. In next half cycle, the terminal A is negative
relative to centre and B is positive relative to centre. Then diode 1 is reverse biased and diode 2 is
forward biased. Therefore current flows in diode 2 and there is no current in diode 1. The
direction of current i2 due to diode II in load resistance is again from X to Y. Thus for input a.c.
signal the output current is a continuous series of unidirectional pulses. This output current may
be converted in fairly steady current by the use of suitable filters.

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