research-article

Unified embedded non-volatile memory for emerging mobile markets

Authors:

Seung H. KangAuthors Info & Claims

ISLPED '14: Proceedings of the 2014 international symposium on Low power electronics and design

Pages 131 - 136

https://doi.org/10.1145/2627369.2631641

Published: 11 August 2014 Publication History

Abstract

Emerging mobile markets such as wearable electronics and Internet of Things necessitate innovations in embedded non-volatile memory (eNVM) for energy-efficient mobile computing and connectivity. In this paper, we briefly review how conventional eNVM has served current markets and investigate emerging eNVM in light of new mobile applications on the horizon. We propose spin-transfer-torque MRAM as a unified eNVM solution that can realize an eNVM-only memory configuration and enable emerging mobile products with high energy efficiency at low cost.

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Cited By

Worledge DHu G(2024)Spin-transfer torque magnetoresistive random access memory technology status and future directionsNature Reviews Electrical Engineering10.1038/s44287-024-00111-z1:11(730-747)Online publication date: 6-Nov-2024
https://doi.org/10.1038/s44287-024-00111-z
Cai BHe YXin YYuan ZZhang XZhu ZLiang G(2023)Unconventional computing based on magnetic tunnel junctionApplied Physics A10.1007/s00339-022-06365-4129:4Online publication date: 3-Mar-2023
https://doi.org/10.1007/s00339-022-06365-4
Yang KJoshua Yang JHuang RYang Y(2021)Nonlinearity in Memristors for Neuromorphic Dynamic SystemsSmall Science10.1002/smsc.2021000492:1Online publication date: 28-Sep-2021
https://doi.org/10.1002/smsc.202100049
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Index Terms

Unified embedded non-volatile memory for emerging mobile markets
1. Hardware

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cover image ACM Conferences

ISLPED '14: Proceedings of the 2014 international symposium on Low power electronics and design

August 2014

398 pages

ISBN:9781450329750

DOI:10.1145/2627369

General Chairs:
Yuan Xie
UCSB, USA
,
Tanay Karnik
Intel, USA
,
Program Chairs:
Muhammad M. Khellah
Intel, USA
,
Renu Mehra
Synopsys, USA

Copyright © 2014 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Published: 11 August 2014

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ISLPED'14: International Symposium on Low Power Electronics and Design

August 11 - 13, 2014

California, La Jolla, USA

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ISLPED '14 Paper Acceptance Rate 63 of 184 submissions, 34%;

Overall Acceptance Rate 398 of 1,159 submissions, 34%

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Cited By

Worledge DHu G(2024)Spin-transfer torque magnetoresistive random access memory technology status and future directionsNature Reviews Electrical Engineering10.1038/s44287-024-00111-z1:11(730-747)Online publication date: 6-Nov-2024
https://doi.org/10.1038/s44287-024-00111-z
Cai BHe YXin YYuan ZZhang XZhu ZLiang G(2023)Unconventional computing based on magnetic tunnel junctionApplied Physics A10.1007/s00339-022-06365-4129:4Online publication date: 3-Mar-2023
https://doi.org/10.1007/s00339-022-06365-4
Yang KJoshua Yang JHuang RYang Y(2021)Nonlinearity in Memristors for Neuromorphic Dynamic SystemsSmall Science10.1002/smsc.2021000492:1Online publication date: 28-Sep-2021
https://doi.org/10.1002/smsc.202100049
Lomenzo PSlesazeck SMikolajick TMikolajick T(2020) Thickness Scaling of AFE-RAM ZrO 2 Capacitors with High Cycling Endurance and Low Process Temperature 2020 IEEE International Memory Workshop (IMW)10.1109/IMW48823.2020.9108146(1-4)Online publication date: May-2020
https://doi.org/10.1109/IMW48823.2020.9108146
Cao QLü WWang XGuan XWang LYan SWu TWang X(2020)Nonvolatile Multistates Memories for High-Density Data StorageACS Applied Materials & Interfaces10.1021/acsami.0c1018412:38(42449-42471)Online publication date: 19-Aug-2020
https://doi.org/10.1021/acsami.0c10184
Parmar VMajumdar SPanda PSuri M(2019)Investigation of Unified Emerging-NVM SoC Architecture for IoT-WSN Applications2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID)10.1109/VLSID.2019.00067(281-286)Online publication date: Jan-2019
https://doi.org/10.1109/VLSID.2019.00067
Natsui MSuzuki DTamakoshi AWatanabe THonjo HKoike HNasuno TMa YTanigawa TNoguchi YYasuhira MSato HIkeda SOhno HEndoh THanyu T(2019)A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT ApplicationsIEEE Journal of Solid-State Circuits10.1109/JSSC.2019.293091054:11(2991-3004)Online publication date: Nov-2019
https://doi.org/10.1109/JSSC.2019.2930910
Yoon SYun JKim JKim S(2018)Self-Adaptive Filtering Algorithm with PCM-Based Memory Storage SystemACM Transactions on Embedded Computing Systems10.1145/319085617:3(1-23)Online publication date: 22-May-2018
https://dl.acm.org/doi/10.1145/3190856
Antonyan APyo SJung HSong T(2018)Embedded MRAM Macro for eFlash Replacement2018 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2018.8351201(1-4)Online publication date: 2018
https://doi.org/10.1109/ISCAS.2018.8351201
Jeong JEndoh T(2017)Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment processJapanese Journal of Applied Physics10.7567/JJAP.56.04CE0956:4S(04CE09)Online publication date: 21-Mar-2017
https://doi.org/10.7567/JJAP.56.04CE09
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