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Input and transistor reordering for NBTI and HCI reduction in complex CMOS gates

Published: 03 May 2012 Publication History

Abstract

As CMOS feature size scales to the nanometer regime, transistor aging mostly due to Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI), has emerged as a major reliability concern. Threshold voltage shift causes the circuit to fail, once the post-aging delay exceeds the timing constraint. In this paper, we investigate the stacking effect of transistors on aging and propose a novel input/transistor reordering approach to alleviate the effect of NBTI and HCI during the active mode operation of the circuit. According to the results, the circuit failing due to aging effect is postponed by increasing the operational lifetime for ISCAS benchmarks by 23.6%, in average, while it has a negligible effect on delay, area, and power compared to the original cell input ordering.

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      cover image ACM Conferences
      GLSVLSI '12: Proceedings of the great lakes symposium on VLSI
      May 2012
      388 pages
      ISBN:9781450312448
      DOI:10.1145/2206781
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      Published: 03 May 2012

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      Author Tags

      1. HCI
      2. NBTI
      3. transistor aging

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      GLSVLSI '12: Great Lakes Symposium on VLSI 2012
      May 3 - 4, 2012
      Utah, Salt Lake City, USA

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